CN1262529A - 微驱动器及其制造方法 - Google Patents
微驱动器及其制造方法 Download PDFInfo
- Publication number
- CN1262529A CN1262529A CN99126366A CN99126366A CN1262529A CN 1262529 A CN1262529 A CN 1262529A CN 99126366 A CN99126366 A CN 99126366A CN 99126366 A CN99126366 A CN 99126366A CN 1262529 A CN1262529 A CN 1262529A
- Authority
- CN
- China
- Prior art keywords
- piezoelectrics
- microdrive
- base plate
- upper electrode
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 238000007730 finishing process Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- BCAARMUWIRURQS-UHFFFAOYSA-N dicalcium;oxocalcium;silicate Chemical compound [Ca+2].[Ca+2].[Ca]=O.[O-][Si]([O-])([O-])[O-] BCAARMUWIRURQS-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 235000011837 pasties Nutrition 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- WNLOJEUKHREVLZ-UHFFFAOYSA-N [Ba].[Ti].[O] Chemical compound [Ba].[Ti].[O] WNLOJEUKHREVLZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
Landscapes
- Micromachines (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Weting (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR19990002281 | 1999-01-25 | ||
KR2281/1999 | 1999-01-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1262529A true CN1262529A (zh) | 2000-08-09 |
CN1191642C CN1191642C (zh) | 2005-03-02 |
Family
ID=19572325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991263669A Expired - Fee Related CN1191642C (zh) | 1999-01-25 | 1999-12-17 | 微驱动器及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6351057B1 (zh) |
JP (1) | JP3515028B2 (zh) |
CN (1) | CN1191642C (zh) |
DE (1) | DE19959169C2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100393387C (zh) * | 2003-12-17 | 2008-06-11 | 松下电器产业株式会社 | 成分分离装置及其制造方法、以及使用它的成分分离方法 |
CN101895230A (zh) * | 2010-06-24 | 2010-11-24 | 西安电子科技大学 | 基于屈曲的低电压大变形微驱动器 |
CN101947883A (zh) * | 2009-07-08 | 2011-01-19 | 精工爱普生株式会社 | 压电元件、其制造方法、压电致动器、喷液头以及喷液装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6351057B1 (en) * | 1999-01-25 | 2002-02-26 | Samsung Electro-Mechanics Co., Ltd | Microactuator and method for fabricating the same |
JP2002321358A (ja) * | 2001-04-24 | 2002-11-05 | Sii Printek Inc | インクジェットヘッド及びコンタクト電極の形成方法 |
DE10126656A1 (de) | 2001-06-01 | 2002-12-05 | Endress & Hauser Gmbh & Co Kg | Elektromechanischer Wandler mit mindestens einem piezoelektrischen Element |
DE10141820A1 (de) * | 2001-08-27 | 2003-03-20 | Elliptec Resonant Actuator Ag | Piezomotor mit Kupferelektroden |
JP3846271B2 (ja) * | 2001-11-05 | 2006-11-15 | 松下電器産業株式会社 | 薄膜圧電体素子およびその製造方法 |
JP5696686B2 (ja) | 2011-08-30 | 2015-04-08 | 株式会社豊田中央研究所 | 半導体装置 |
JP2016219452A (ja) * | 2015-05-14 | 2016-12-22 | 富士通株式会社 | 多層基板及び多層基板の製造方法 |
US11289641B2 (en) | 2018-09-19 | 2022-03-29 | Sae Magnetics (H.K.) Ltd. | Thin-film piezoelectric-material element, method of manufacturing the same, head gimbal assembly and hard disk drive |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3004331C2 (de) * | 1980-02-06 | 1983-06-23 | Siemens AG, 1000 Berlin und 8000 München | Zu Dickenscherungsschwingungen anregbare Resonatorplatte |
JPS58137317A (ja) * | 1982-02-09 | 1983-08-15 | Nec Corp | 圧電薄膜複合振動子 |
JPS60189307A (ja) * | 1984-03-09 | 1985-09-26 | Toshiba Corp | 圧電薄膜共振器およびその製造方法 |
JPS61127217A (ja) * | 1984-11-26 | 1986-06-14 | Toshiba Corp | 圧電薄膜共振子 |
US4680595A (en) * | 1985-11-06 | 1987-07-14 | Pitney Bowes Inc. | Impulse ink jet print head and method of making same |
DE69026765T2 (de) * | 1989-07-11 | 1996-10-24 | Ngk Insulators Ltd | Einen piezoelektrischen/elektrostriktiven Film enthaltende piezoelektrischer/elektrostriktiver Antrieb |
JPH07108102B2 (ja) * | 1990-05-01 | 1995-11-15 | 日本碍子株式会社 | 圧電/電歪膜型アクチュエータの製造方法 |
US5210455A (en) * | 1990-07-26 | 1993-05-11 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive actuator having ceramic substrate having recess defining thin-walled portion |
US5265315A (en) * | 1990-11-20 | 1993-11-30 | Spectra, Inc. | Method of making a thin-film transducer ink jet head |
US5185589A (en) * | 1991-05-17 | 1993-02-09 | Westinghouse Electric Corp. | Microwave film bulk acoustic resonator and manifolded filter bank |
US5459501A (en) * | 1993-02-01 | 1995-10-17 | At&T Global Information Solutions Company | Solid-state ink-jet print head |
US5587620A (en) * | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
US5612536A (en) * | 1994-02-07 | 1997-03-18 | Matsushita Electric Industrial Co., Ltd. | Thin film sensor element and method of manufacturing the same |
US5692279A (en) * | 1995-08-17 | 1997-12-02 | Motorola | Method of making a monolithic thin film resonator lattice filter |
JPH1032454A (ja) * | 1996-07-15 | 1998-02-03 | Olympus Optical Co Ltd | マイクロ圧電振動子 |
JPH1086366A (ja) * | 1996-09-18 | 1998-04-07 | Fuji Electric Co Ltd | セラミックス素子の製造方法 |
JP3340043B2 (ja) * | 1996-12-26 | 2002-10-28 | 京セラ株式会社 | 圧電アクチュエータとその製造方法 |
KR100540644B1 (ko) * | 1998-02-19 | 2006-02-28 | 삼성전자주식회사 | 마이크로 엑츄에이터 제조방법 |
JP2000085124A (ja) * | 1998-09-14 | 2000-03-28 | Matsushita Electric Ind Co Ltd | インクジェットヘッド及びその製造方法 |
US6351057B1 (en) * | 1999-01-25 | 2002-02-26 | Samsung Electro-Mechanics Co., Ltd | Microactuator and method for fabricating the same |
KR100289606B1 (ko) * | 1999-01-25 | 2001-05-02 | 이형도 | 잉크젯 프린트헤드용 챔버판의 패터닝방법과 그에 의해 제조되는 액츄에이터 |
-
1999
- 1999-12-01 US US09/452,553 patent/US6351057B1/en not_active Expired - Fee Related
- 1999-12-06 JP JP34608899A patent/JP3515028B2/ja not_active Expired - Fee Related
- 1999-12-08 DE DE1999159169 patent/DE19959169C2/de not_active Expired - Fee Related
- 1999-12-17 CN CNB991263669A patent/CN1191642C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100393387C (zh) * | 2003-12-17 | 2008-06-11 | 松下电器产业株式会社 | 成分分离装置及其制造方法、以及使用它的成分分离方法 |
US8333896B2 (en) | 2003-12-17 | 2012-12-18 | Panasonic Corporation | Component separation device, method of manufacturing the same, and method of separating components using the same |
CN101947883A (zh) * | 2009-07-08 | 2011-01-19 | 精工爱普生株式会社 | 压电元件、其制造方法、压电致动器、喷液头以及喷液装置 |
US8342660B2 (en) | 2009-07-08 | 2013-01-01 | Seiko Epson Corporation | Piezoelectric element, method for manufacturing the same, piezoelectric actuator, liquid ejecting head, and liquid ejecting apparatus |
CN101895230A (zh) * | 2010-06-24 | 2010-11-24 | 西安电子科技大学 | 基于屈曲的低电压大变形微驱动器 |
CN101895230B (zh) * | 2010-06-24 | 2013-01-23 | 西安电子科技大学 | 基于屈曲的低电压变形微驱动器 |
Also Published As
Publication number | Publication date |
---|---|
JP2000211136A (ja) | 2000-08-02 |
DE19959169A1 (de) | 2000-08-17 |
DE19959169C2 (de) | 2003-07-17 |
CN1191642C (zh) | 2005-03-02 |
US6351057B1 (en) | 2002-02-26 |
JP3515028B2 (ja) | 2004-04-05 |
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Legal Events
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---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD Effective date: 20020327 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20020327 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Electronics Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung Electro-Mechanics Co., Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050302 Termination date: 20101217 |