CN1258224C - 低电压操作的单一多晶硅快闪存储单元结构及其阵列 - Google Patents
低电压操作的单一多晶硅快闪存储单元结构及其阵列 Download PDFInfo
- Publication number
- CN1258224C CN1258224C CN02123180.XA CN02123180A CN1258224C CN 1258224 C CN1258224 C CN 1258224C CN 02123180 A CN02123180 A CN 02123180A CN 1258224 C CN1258224 C CN 1258224C
- Authority
- CN
- China
- Prior art keywords
- trap
- ion
- conduction type
- type ion
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000015654 memory Effects 0.000 title claims abstract description 165
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims description 219
- 238000005040 ion trap Methods 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 31
- 229920005591 polysilicon Polymers 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims 3
- 239000000203 mixture Substances 0.000 description 33
- 239000002800 charge carrier Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000002784 hot electron Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/063,444 | 2002-04-24 | ||
US10/063,444 US6750504B2 (en) | 2002-04-24 | 2002-04-24 | Low voltage single-poly flash memory cell and array |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1453877A CN1453877A (zh) | 2003-11-05 |
CN1258224C true CN1258224C (zh) | 2006-05-31 |
Family
ID=29248074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN02123180.XA Expired - Fee Related CN1258224C (zh) | 2002-04-24 | 2002-06-26 | 低电压操作的单一多晶硅快闪存储单元结构及其阵列 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6750504B2 (zh) |
JP (1) | JP4071120B2 (zh) |
CN (1) | CN1258224C (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITMI20042373A1 (it) * | 2004-12-14 | 2005-03-14 | St Microelectronics Srl | Dispositivo elettronico di memoria con celle di memoria non-volatili ad alta densita' e con ridotta interferenza capacitiva fra le celle |
US7646053B2 (en) * | 2007-10-10 | 2010-01-12 | Micron Technology, Inc. | Memory cell storage node length |
JP2009130136A (ja) * | 2007-11-22 | 2009-06-11 | Renesas Technology Corp | 不揮発性半導体記憶装置およびその製造方法 |
US8228726B2 (en) * | 2008-12-14 | 2012-07-24 | Chip Memory Technology, Inc. | N-channel SONOS non-volatile memory for embedded in logic |
CN101969049B (zh) * | 2009-07-27 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | 闪存器件的多晶字线顶端区域的制作方法 |
US8471328B2 (en) | 2010-07-26 | 2013-06-25 | United Microelectronics Corp. | Non-volatile memory and manufacturing method thereof |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6418060B1 (en) * | 2002-01-03 | 2002-07-09 | Ememory Technology Inc. | Method of programming and erasing non-volatile memory cells |
-
2002
- 2002-04-24 US US10/063,444 patent/US6750504B2/en not_active Expired - Fee Related
- 2002-06-26 CN CN02123180.XA patent/CN1258224C/zh not_active Expired - Fee Related
-
2003
- 2003-01-28 JP JP2003018441A patent/JP4071120B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2003318291A (ja) | 2003-11-07 |
US20030201487A1 (en) | 2003-10-30 |
JP4071120B2 (ja) | 2008-04-02 |
CN1453877A (zh) | 2003-11-05 |
US6750504B2 (en) | 2004-06-15 |
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SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: LIJING SEMICONDUCTOR CO., LTD. Free format text: FORMER OWNER: LIWANG ELECTRONIC CO., LTD Effective date: 20050121 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20050121 Address after: Hsinchu city of Taiwan Province Applicant after: Powerchip Semiconductor Corp. Address before: Hsinchu city of Taiwan Province Applicant before: Liwang Electronic Co., Ltd |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060531 Termination date: 20100626 |