CN1253930C - Producing method for image sensor - Google Patents
Producing method for image sensor Download PDFInfo
- Publication number
- CN1253930C CN1253930C CNB031197671A CN03119767A CN1253930C CN 1253930 C CN1253930 C CN 1253930C CN B031197671 A CNB031197671 A CN B031197671A CN 03119767 A CN03119767 A CN 03119767A CN 1253930 C CN1253930 C CN 1253930C
- Authority
- CN
- China
- Prior art keywords
- substrate
- sensing wafer
- image sensing
- image sensor
- photic zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention relates to an image sensor manufacturing method which is proposed in order to provide a sensor encapsulation method for effectively removing impurities, eliminating static, avoiding impurity attachment and ensuring the quality of the image sensor. The present invention comprises the following steps that a base board with an upper surface on which a plurality of first connection points are formed and a lower surface on which a plurality of second connection points are formed is provided; a flange layer is arranged on the upper surface of the base board and forms a groove with the base board; an image sensing wafer is arranged on the upper surface of the base board and is positioned in the groove; a plurality of conducting wires are electrically connected with the image sensing wafer onto the first connection points of the base board; a euphotic layer for euphotic glass is arranged on the flange layer so as to cover the image sensing wafer; a static elimination light source is arranged above the euphotic layer.
Description
Technical field
The invention belongs to sensor package method, particularly a kind of image sensor manufacture method.
Background technology
General sensor can be used to the signal that sensing is light signal or sound signal.Image sensor system is used for receiving light signal or image signal.After receiving the light signal, can see through image sensor the light signal is transformed into electric signal, be passed on the circuit board by substrate.
As shown in Figure 1, known image sensor comprises substrate 10, flange layer 18, image sensing wafer 26, many leads 28 and photic zone 34.
Substrate 10 is provided with upper surface 12 that forms first contact 15 and the lower surface 14 that forms second contact 16.
Flange layer 18 is provided with first surface 20 and sticks together and is fixed on substrate 10 upper surfaces 12 and forms the second surface 22 of grooves 24 with substrate 10.
Image sensing wafer 26 is to be located in the groove 24 of substrate 10 and flange layer 18 formation, and is fixed on the upper surface 12 of substrate 10.
Many leads 28 have first end points 30 that is electrically connected to image sensing wafer 26 and are electrically connected to second end points 32 on first contact 15 of substrate 10.
Photic zone 34 is glutinous being located on the first surface 20 of flange layer 18.
Only, known image sensor even photic zone 34 and image sensing wafer 26 have passed through clean before encapsulation, also often has impurity to adhere electrostatically on photic zone 34 and the image sensing wafer 26, so that influences the quality after the image sensor encapsulation.
Summary of the invention
The purpose of this invention is to provide a kind of effective removal of contamination, eliminate static, avoid impurity to adhere to, guarantee the image sensor manufacture method of image sensor quality.
The present invention includes following steps: the substrate that is provided with upper surface and lower surface is provided, and upper surface forms a plurality of first contacts, and lower surface forms a plurality of second contacts; On the upper surface of substrate, flange layer is set, and forms groove with substrate; Image sensing wafer is arranged on the upper surface of substrate, and is positioned at groove; Many leads are electrically connected image sensing wafer to first contact of substrate; Mucigel is formed on the upper surface of substrate, mucigel is positioned at groove and is formed at the image sensing wafer periphery; To be arranged at for the photic zone of transparent glass on the flange layer, so that image sensing wafer is covered; In the photic zone top static that is produced by Xelminator is set and eliminates light source.
Wherein:
The viscose series of strata are formed on the upper surface of base plate with coating or spray pattern.
Photic zone is a transparent glass.
Owing to the present invention includes following steps: the substrate that is provided with upper surface and lower surface is provided, and upper surface forms a plurality of first contacts, and lower surface forms a plurality of second contacts; On the upper surface of substrate, flange layer is set, and forms groove with substrate; Image sensing wafer is arranged on the upper surface of substrate, and is positioned at groove; Many leads are electrically connected image sensing wafer to first contact of substrate; Mucigel is formed on the upper surface of substrate, mucigel is positioned at groove and is formed at the image sensing wafer periphery; To be arranged at for the photic zone of transparent glass on the flange layer, so that image sensing wafer is covered; In the photic zone top static that is produced by Xelminator is set and eliminates light source.By eliminating no longer electrostatic adherence and fall to its image that no longer influences image sensor is received of impurity that static makes impurity in the groove and photic zone, image sensing wafer, with the quality of effective raising image sensor.Effective removal of contamination not only, and eliminate static, avoid impurity to adhere to, guarantee the image sensor quality, thereby reach purpose of the present invention.
Description of drawings
Fig. 1, be known image sensor structure schematic sectional view.
Fig. 2, be step 1 of the present invention, two, three, four schematic diagrames.
Fig. 3, for step 5 schematic diagram of the present invention.
Fig. 4, be step 6 of the present invention, seven schematic diagrames.
Embodiment
The present invention includes following steps:
Step 1
Substrate is provided
As shown in Figure 2, provide the substrate 40 that is provided with upper surface 42 and lower surface 44, upper surface 42 forms a plurality of first contacts 46, and lower surface 44 forms a plurality of second contacts 48;
Step 2
Flange layer is set
As shown in Figure 2, on the upper surface 42 of substrate 40, flange layer 50 is set, and forms groove 52 with substrate 40;
Step 3
Image sensing wafer is set
As shown in Figure 2, image sensing wafer 54 is arranged on the upper surface 42 of substrate 40, and is positioned at groove 52;
Step 4
Be electrically connected many leads
Step 5
Mucigel is set
As shown in Figure 3, mucigel 58 is formed on the upper surface 42 of substrate 40 with coating or spray pattern, mucigel 58 is positioned at groove 52 and is formed at image sensing wafer 54 peripheries;
Step 6
Photic zone is set
As shown in Figure 4, will be arranged at for the photic zone 60 of transparent glass on the flange layer 50, in order to image sensing wafer 54 is covered;
Step 7
Static is set eliminates light source
As shown in Figure 4, to produce static elimination light source 62 by Xelminator and be arranged at photic zone 60 tops, use and eliminate the interior static of image sensor that encapsulation is finished, the impurity that makes impurity in the groove 52 and photic zone 60, image sensing wafer 54 is electrostatic adherence and falling on the mucigel 58 no longer, and sticked by mucigel 58, its image that no longer influences image sensor is received, with the quality of effective raising image sensor.
Claims (3)
1, a kind of image sensor manufacture method, it comprises the steps: to provide the substrate that is provided with upper surface and lower surface, and upper surface forms a plurality of first contacts, and lower surface forms a plurality of second contacts; On the upper surface of substrate, flange layer is set, and forms groove with substrate; Image sensing wafer is arranged on the upper surface of substrate, and is positioned at groove; Many leads are electrically connected image sensing wafer to first contact of substrate; To be arranged at for the photic zone of transparent glass on the flange layer, so that image sensing wafer is covered; It is characterized in that the described photic zone that is provided with is formed at mucigel on the upper surface of substrate earlier before, mucigel is positioned at groove and is formed at the image sensing wafer periphery; Be provided with after the photic zone, in the photic zone top static that is produced by Xelminator be set and eliminate light source.
2, image sensor manufacture method according to claim 1 is characterized in that described viscose series of strata are formed on the upper surface of base plate with coating or spray pattern.
3, image sensor manufacture method according to claim 1 is characterized in that described photic zone is a transparent glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031197671A CN1253930C (en) | 2003-03-11 | 2003-03-11 | Producing method for image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031197671A CN1253930C (en) | 2003-03-11 | 2003-03-11 | Producing method for image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1531040A CN1531040A (en) | 2004-09-22 |
| CN1253930C true CN1253930C (en) | 2006-04-26 |
Family
ID=34285255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031197671A Expired - Fee Related CN1253930C (en) | 2003-03-11 | 2003-03-11 | Producing method for image sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1253930C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101414592B (en) * | 2007-10-18 | 2010-04-14 | 鸿富锦精密工业（深圳）有限公司 | Image sensor encapsulation |
-
2003
- 2003-03-11 CN CNB031197671A patent/CN1253930C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1531040A (en) | 2004-09-22 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060426 |