CN1185531C - Thin film electrocrystal liquid crystal display device and making method - Google Patents
Thin film electrocrystal liquid crystal display device and making method Download PDFInfo
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- CN1185531C CN1185531C CNB011362057A CN01136205A CN1185531C CN 1185531 C CN1185531 C CN 1185531C CN B011362057 A CNB011362057 A CN B011362057A CN 01136205 A CN01136205 A CN 01136205A CN 1185531 C CN1185531 C CN 1185531C
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Abstract
The present invention relates to an electrical crystal liquid crystal display device with a thin film and a making method. The making method comprises the following steps that a first basal plate and a second basal plate which are arranged oppositely are provided; a black matrix layer is formed on the surface of the first basal plate; an opening part which forces the surface of the basal plate to expose is arranged on the black matrix layer; a coating layer is formed on the surfaces of the black matrix layer and the opening part; a shading layer is formed on the surface of the second basal plate; the shading layer and the opening part are in opposite arrangement; the area of the shading layer is larger than the area of the opening part; an insulation layer is formed on the surfaces of the shading layer and the second basal plate; in addition, a sealing layer is formed between the coating layer and the insulation layer. The present invention can enhance the adhesive force of the black matrix layer and the basal plates largely; using the method to obtain the electrical crystal liquid crystal display device with a thin film which is impacted by the vibration of external force; the black matrix layer can not fall from the basal plates.
Description
Technical field
The present invention relates to a kind of thin-film transistor LCD device and manufacture method, especially a kind of thin-film transistor LCD device and manufacture method that improves black matrix and substrate clinging power.
Background technology
With reference to Fig. 1, figure is the diagrammatic cross-section of known thin-film transistor LCD device (TFT-LCD).Among the figure, 10 is that chromatic filter (Color Filter) substrate, 12 is that black matrix (Black Matrix), 14 is that coat, 16 is that conductive layer (ITO layer), 18 is that sealant, 20 is that thin-film transistor array base-plate, 22 is insulation course.In known thin-film transistor LCD device, black matrix 12 is used as the light shield layer of base plate of color light filter 10 sides widely.Yet, because black matrix 12 is for the poor adherence of substrate 10, so be easy to peel off when being subjected to vibratory impulse.Black matrix mainly is made up of polymkeric substance (polymer) and opacifier (light shielding agent), therefore is used for strengthening the mode of deceiving the matrix clinging power at present and mainly contains: increase the proportion of polymkeric substance and seek more suitable methods such as light smoke agent for shielding.But, if increase the proportion of polymkeric substance, will cause optical density (OD) (optical density) to descend, therefore, nationality has certain restriction by the mode that raising polymkeric substance proportion improves black matrix clinging power; In addition, seeking suitable its process of opacifier greatly too wastes time and energy.Therefore, seek other easier modes and strengthen the clinging power of black matrix, become one of emphasis of industry research for substrate.
Summary of the invention
The purpose of this invention is to provide a kind of thin-film transistor LCD device manufacture method.
Another object of the present invention provides a kind of thin-film transistor LCD device.
Technical scheme of the present invention is: a kind of manufacture method of thin-film transistor LCD device comprises the following steps:
One first substrate and one second substrate are provided, above-mentioned first substrate and second substrate practise physiognomy to and dispose;
One black matrix layer is set in the surface of above-mentioned first substrate, and one peristome that can make above-mentioned first substrate surface expose is set in above-mentioned black matrix layer;
The surface of one coat in above-mentioned black matrix layer and peristome is set;
The surface of one light shield layer in above-mentioned second substrate is set, above-mentioned light shield layer catch up with state peristome become to practise physiognomy to and dispose, and the area of above-mentioned light shield layer is bigger than the area of above-mentioned peristome;
The surface of one insulation course in the above-mentioned light shield layer and second substrate is set; And
Between above-mentioned coat and above-mentioned insulation course one sealant is set.
A kind of thin-film transistor LCD device comprises:
One first substrate and one second substrate, above-mentioned first substrate and second substrate practise physiognomy to and dispose;
One black matrix layer is arranged at above-mentioned first substrate surface, and described black matrix layer is provided with a peristome that can expose above-mentioned first substrate surface;
One coat is arranged at the surface of above-mentioned black matrix layer and peristome;
One light shield layer is arranged at the surface of above-mentioned second substrate, and above-mentioned light shield layer is caught up with and stated peristome and become to practise physiognomy to configuration, and the area of above-mentioned light shield layer is bigger than the area of above-mentioned peristome;
One insulation course is arranged at the surface of the above-mentioned light shield layer and second substrate; And
One sealant is arranged between above-mentioned coat and above-mentioned insulation course.
Above-mentioned first substrate is a base plate of color light filter.
Above-mentioned second substrate is a thin-film transistor array base-plate.
Above-mentioned light shield layer is made of metal.
Characteristics of the present invention and advantage are, the many defectives in the known technology have been overcome, the manufacture method of the above-mentioned thin-film transistor LCD device of mat, improve the clinging power of black matrix and substrate significantly, even make utilize the resulting thin-film transistor LCD device of the method to be subjected to the vibratory impulse of external force after, black matrix also is difficult for peeling off from substrate, and the light shield layer of Zeng Jiaing can prevent peristome generation light leakage phenomena simultaneously.
Description of drawings
Fig. 1 is the diagrammatic cross-section of known thin-film transistor LCD device (TFT-LCD);
Fig. 2 a-Fig. 2 e is the manufacturing process synoptic diagram of the thin-film transistor LCD device of first embodiment of the invention;
Fig. 3 is the diagrammatic cross-section of the thin-film transistor LCD device of second embodiment of the invention;
Fig. 4 is along the diagrammatic cross-section of I-I ' line among Fig. 2 e.
The drawing reference numeral explanation
10, base plate of color light filter 12, black matrix 14, coat 16, conductive layer (ITO layer)
18, sealant 20, thin-film transistor array base-plate 22, insulation course
30, base plate of color light filter 32, black matrix 33, peristome 34, coat
35, peristome 36, conductive layer (ITO layer) 38, sealant
40, thin-film transistor array base-plate 42, insulation course 44, light shield layer 45, light shield layer
Embodiment
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail below.
First embodiment
At first, shown in Fig. 2 a, prepare a base plate of color light filter (hereinafter to be referred as the CF substrate) 30 earlier.Secondly, form a black matrix layer 32 in the surface of above-mentioned CF substrate 30, and offer plural peristome 33 near the edge of black matrix layer 32, the result is shown in Fig. 2 b.Then, shown in Fig. 2 c, form one in the surface of above-mentioned black matrix layer 32 in the mode of comprehensive covering and apply (over coat) layer 34.Again, shown in Fig. 2 d, form a sealant 38 in the surface of above-mentioned coat 34.At last, (reference is shown in Figure 4 with successively being formed with the thin-film transistor array base-plate 40 of plural light shield layer 44 with insulation course 42, then not shown herein thin-film transistor array base-plate 40 and insulation course 42, plural light shield layer 44 only is shown) with make above-mentioned light shield layer 44 and 33 one-tenth of above-mentioned peristomes practise physiognomy to mode give superimposedly, the result is shown in Fig. 2 e.Wherein, the area of above-mentioned light shield layer 44 is bigger than the area of above-mentioned peristome 33.
As shown in Figure 4, among Fig. 2 e along the diagrammatic cross-section of I-I ' line.From above-mentioned Fig. 4, can find out, because coat 34 directly contacts with CF substrate 30 by peristome 33, therefore can improve the clinging power of black matrix layer 32 and CF substrate 30 significantly, so even be subjected to the vibratory impulse of external force, black matrix layer 32 also is difficult for peeling off from CF substrate 30.The purpose of above-mentioned light shield layer 44 is set, and is for preventing to take place at above-mentioned peristome 33 places the phenomenon of light leak, therefore corresponding to the position of above-mentioned peristome 33 light shield layer 44 of area greater than peristome 33 is set at thin-film transistor array base-plate 40.
In addition, above-mentioned light shield layer 44 can be made of institutes such as for example metals.
Second embodiment
As shown in Figure 3, change into the strip light shield layer 45 except that the plural peristome 33 among first embodiment being changed into the bigger strip peristome 35 of an aperture area, light shield layer 44, all the other steps are all identical with first embodiment.
Method according to second embodiment, can make coat 34 directly contact with CF substrate 30 by peristome 35, therefore can improve the clinging power of black matrix layer 32 and CF substrate 30 significantly, even be subjected to the vibratory impulse of external force, black matrix layer 32 also is difficult for peeling off from CF substrate 30.
In addition, above-mentioned light shield layer 45 can be made of institutes such as for example metals.
Though the above is the preferred embodiments of the present invention only, be not in order to limit the present invention.To this area those of ordinary skill, various variations or the modification made all should be included within design of the present invention and the protection domain.
Claims (8)
1, a kind of manufacture method of thin-film transistor LCD device is characterized in that: comprise the following steps:
One first substrate and one second substrate are provided, above-mentioned first substrate and second substrate practise physiognomy to and dispose;
One black matrix layer is set in the surface of above-mentioned first substrate, and one peristome that can make above-mentioned first substrate surface expose is set in above-mentioned black matrix layer;
The surface of one coat in above-mentioned black matrix layer and peristome is set;
The surface of one light shield layer in above-mentioned second substrate is set, above-mentioned light shield layer catch up with state peristome become to practise physiognomy to and dispose, and the area of above-mentioned light shield layer is bigger than the area of above-mentioned peristome;
The surface of one insulation course in the above-mentioned light shield layer and second substrate is set; And
Between above-mentioned coat and above-mentioned insulation course one sealant is set.
2, the manufacture method of thin-film transistor LCD device as claimed in claim 1 is characterized in that: above-mentioned first substrate is a base plate of color light filter.
3, the manufacture method of thin-film transistor LCD device as claimed in claim 1 is characterized in that: above-mentioned second substrate is a thin-film transistor array base-plate.
4, the manufacture method of thin-film transistor LCD device as claimed in claim 1 is characterized in that: above-mentioned light shield layer is made of metal.
5, a kind of thin-film transistor LCD device is characterized in that: comprising:
One first substrate and one second substrate, above-mentioned first substrate and second substrate practise physiognomy to and dispose;
One black matrix layer is arranged at above-mentioned first substrate surface, and described black matrix layer is provided with a peristome that can expose above-mentioned first substrate surface;
One coat is arranged at the surface of above-mentioned black matrix layer and peristome;
One light shield layer is arranged at the surface of above-mentioned second substrate, and above-mentioned light shield layer is caught up with and stated peristome and become to practise physiognomy to configuration, and the area of above-mentioned light shield layer is bigger than the area of above-mentioned peristome;
One insulation course is arranged at the surface of the above-mentioned light shield layer and second substrate; And
One sealant is arranged between above-mentioned coat and above-mentioned insulation course.
6, thin-film transistor LCD device as claimed in claim 5 is characterized in that: above-mentioned first substrate is a base plate of color light filter.
7, thin-film transistor LCD device as claimed in claim 5 is characterized in that: above-mentioned second substrate is a thin-film transistor array base-plate.
8, thin-film transistor LCD device as claimed in claim 5 is characterized in that: above-mentioned light shield layer is made of metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011362057A CN1185531C (en) | 2001-10-09 | 2001-10-09 | Thin film electrocrystal liquid crystal display device and making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011362057A CN1185531C (en) | 2001-10-09 | 2001-10-09 | Thin film electrocrystal liquid crystal display device and making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1410820A CN1410820A (en) | 2003-04-16 |
| CN1185531C true CN1185531C (en) | 2005-01-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011362057A Expired - Lifetime CN1185531C (en) | 2001-10-09 | 2001-10-09 | Thin film electrocrystal liquid crystal display device and making method |
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| Country | Link |
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| CN (1) | CN1185531C (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100437317C (en) * | 2005-09-26 | 2008-11-26 | 爱普生映像元器件有限公司 | Liquid crystal display device |
| JP4784382B2 (en) | 2005-09-26 | 2011-10-05 | ソニー株式会社 | Liquid crystal display |
| CN101713882B (en) * | 2008-10-01 | 2013-07-17 | 株式会社日立显示器 | Liquid crystal display device |
| CN104503133B (en) * | 2010-08-16 | 2018-01-23 | 友达光电股份有限公司 | Liquid crystal display panel |
| JP2014026199A (en) | 2012-07-30 | 2014-02-06 | Japan Display Inc | Liquid crystal display device |
| JP2014092772A (en) * | 2012-11-07 | 2014-05-19 | Japan Display Inc | Liquid crystal display device |
| CN103048827B (en) * | 2012-12-24 | 2016-01-27 | 京东方科技集团股份有限公司 | A kind of liquid crystal display module |
| CN106842678A (en) * | 2017-02-13 | 2017-06-13 | 京东方科技集团股份有限公司 | A kind of color membrane substrates, display panel and display device |
-
2001
- 2001-10-09 CN CNB011362057A patent/CN1185531C/en not_active Expired - Lifetime
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| CN1410820A (en) | 2003-04-16 |
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