CN1240167C - 用于取样光栅分布型布拉格反射激光器的改进反射镜和腔 - Google Patents
用于取样光栅分布型布拉格反射激光器的改进反射镜和腔 Download PDFInfo
- Publication number
- CN1240167C CN1240167C CNB01808964XA CN01808964A CN1240167C CN 1240167 C CN1240167 C CN 1240167C CN B01808964X A CNB01808964X A CN B01808964XA CN 01808964 A CN01808964 A CN 01808964A CN 1240167 C CN1240167 C CN 1240167C
- Authority
- CN
- China
- Prior art keywords
- length
- mirror
- back mirror
- chamber
- tunable laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
- Optical Elements Other Than Lenses (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Aerials With Secondary Devices (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20305200P | 2000-05-04 | 2000-05-04 | |
US60/203,052 | 2000-05-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1428018A CN1428018A (zh) | 2003-07-02 |
CN1240167C true CN1240167C (zh) | 2006-02-01 |
Family
ID=22752272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB01808964XA Expired - Lifetime CN1240167C (zh) | 2000-05-04 | 2001-05-04 | 用于取样光栅分布型布拉格反射激光器的改进反射镜和腔 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6590924B2 (zh) |
EP (1) | EP1281221B8 (zh) |
JP (1) | JP4989834B2 (zh) |
CN (1) | CN1240167C (zh) |
AT (1) | ATE403248T1 (zh) |
AU (1) | AU2001259503A1 (zh) |
CA (1) | CA2405852A1 (zh) |
DE (1) | DE60135106D1 (zh) |
WO (1) | WO2001084682A2 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7836648B2 (en) | 2002-05-03 | 2010-11-23 | Faus Group | Flooring system having complementary sub-panels |
US7836649B2 (en) | 2002-05-03 | 2010-11-23 | Faus Group, Inc. | Flooring system having microbevels |
US8112958B2 (en) | 2002-05-03 | 2012-02-14 | Faus Group | Flooring system having complementary sub-panels |
US8181407B2 (en) | 2002-05-03 | 2012-05-22 | Faus Group | Flooring system having sub-panels |
US8201377B2 (en) | 2004-11-05 | 2012-06-19 | Faus Group, Inc. | Flooring system having multiple alignment points |
US8209928B2 (en) | 1999-12-13 | 2012-07-03 | Faus Group | Embossed-in-registration flooring system |
US8875460B2 (en) | 1999-11-05 | 2014-11-04 | Faus Group, Inc. | Direct laminated floor |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6728279B1 (en) * | 1999-05-17 | 2004-04-27 | Interuniversitair Microelektronica Centrum | Widely wavelength tunable integrated semiconductor device and method for widely tuning semiconductor devices |
GB2377549A (en) * | 2001-07-14 | 2003-01-15 | Marconi Caswell Ltd | Tuneable laser |
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
CN101432936B (zh) | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | 具有多顶侧接触的垂直腔面发射激光器 |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US20060104321A1 (en) * | 2004-11-15 | 2006-05-18 | Lightip Technologies Inc. | Q-modulated semiconductor laser with electro-absorptive grating structures |
JP4657853B2 (ja) | 2005-08-11 | 2011-03-23 | 住友電工デバイス・イノベーション株式会社 | 半導体レーザ、レーザモジュール、光学部品、レーザ装置、半導体レーザの製造方法および半導体レーザの制御方法 |
EP1978612B1 (en) * | 2007-04-05 | 2017-08-16 | Sumitomo Electric Device Innovations, Inc. | Optical semiconductor device and method of controlling the same |
EP2174392B1 (en) * | 2007-08-02 | 2020-04-29 | EFFECT Photonics B.V. | Semiconductor laser device |
CN103828146B (zh) * | 2011-07-22 | 2017-07-21 | 因赛特光电子解决方案有限公司 | 从激光器动态自适应地生成波长连续的且规定的波长对时间的扫描的***和方法 |
JP2013219192A (ja) * | 2012-04-09 | 2013-10-24 | Fujitsu Ltd | 半導体レーザ |
JP6241919B2 (ja) * | 2013-09-30 | 2017-12-06 | 住友電工デバイス・イノベーション株式会社 | 光学半導体デバイス |
JP2016051807A (ja) | 2014-08-29 | 2016-04-11 | 富士通オプティカルコンポーネンツ株式会社 | 半導体レーザ |
US9312662B1 (en) | 2014-09-30 | 2016-04-12 | Lumentum Operations Llc | Tunable laser source |
JP6684094B2 (ja) * | 2015-03-20 | 2020-04-22 | 古河電気工業株式会社 | 波長可変レーザ素子およびレーザモジュール |
DE112016002585T5 (de) | 2015-06-10 | 2018-05-24 | Furukawa Electric Co., Ltd. | Pulslaservorrichtung |
CN105356292B (zh) * | 2015-11-30 | 2018-11-02 | 武汉电信器件有限公司 | 一种可调谐波长半导体激光器 |
CN106981819B (zh) | 2016-01-15 | 2019-05-28 | 华为技术有限公司 | 一种可调激光器及其控制方法 |
CN106941241B (zh) * | 2016-10-21 | 2019-06-04 | 武汉光迅科技股份有限公司 | 一种基于ebl的激光器加工方法及其应用方法 |
CN111162454B (zh) | 2020-01-02 | 2021-03-12 | 中国科学院半导体研究所 | 一种宽波段调谐***及调谐方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622672A (en) | 1984-01-20 | 1986-11-11 | At&T Bell Laboratories | Self-stabilized semiconductor lasers |
US4896325A (en) * | 1988-08-23 | 1990-01-23 | The Regents Of The University Of California | Multi-section tunable laser with differing multi-element mirrors |
EP0391334B1 (en) * | 1989-04-04 | 1994-08-31 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and wavelength selective fitter, and methods of driving the same |
US5088097A (en) | 1990-04-04 | 1992-02-11 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
US5325392A (en) * | 1992-03-06 | 1994-06-28 | Nippon Telegraph And Telephone Corporation | Distributed reflector and wavelength-tunable semiconductor laser |
JPH0653591A (ja) * | 1992-08-03 | 1994-02-25 | Nippon Telegr & Teleph Corp <Ntt> | 光周波数変換素子 |
JP3086767B2 (ja) * | 1993-05-31 | 2000-09-11 | 株式会社東芝 | レ−ザ素子 |
US5379318A (en) * | 1994-01-31 | 1995-01-03 | Telefonaktiebolaget L M Ericsson | Alternating grating tunable DBR laser |
JP3226073B2 (ja) | 1994-02-18 | 2001-11-05 | キヤノン株式会社 | 偏波変調可能な半導体レーザおよびその使用法 |
US5841799A (en) | 1994-12-17 | 1998-11-24 | Canon Kabushiki Kaisha | Semiconductor laser, modulation method therefor and optical communication system using the same |
US5579328A (en) | 1995-08-10 | 1996-11-26 | Northern Telecom Limited | Digital control of laser diode power levels |
US6100975A (en) * | 1996-05-13 | 2000-08-08 | Process Instruments, Inc. | Raman spectroscopy apparatus and method using external cavity laser for continuous chemical analysis of sample streams |
US5715271A (en) | 1996-08-01 | 1998-02-03 | Northern Telecom Limited | Polarization independent grating resonator filter |
SE519081C3 (sv) | 1998-01-21 | 2003-02-19 | Altitun Ab | Förfarande och anordning för optimering av lasrars operationspunkt, jämte anordning |
GB9809583D0 (en) * | 1998-05-06 | 1998-07-01 | Marconi Gec Ltd | Optical devices |
TW393813B (en) * | 1998-12-03 | 2000-06-11 | Nat Science Council | Adjustable monolithic multi-wavelength laser arrays |
US6421365B1 (en) * | 1999-11-18 | 2002-07-16 | Lambda Physik Ag | Narrow band excimer or molecular fluorine laser having an output coupling interferometer |
US6349106B1 (en) * | 1999-09-02 | 2002-02-19 | Agility Communications, Inc. | Method for converting an optical wavelength using a monolithic wavelength converter assembly |
-
2001
- 2001-05-04 CN CNB01808964XA patent/CN1240167C/zh not_active Expired - Lifetime
- 2001-05-04 EP EP01933039A patent/EP1281221B8/en not_active Expired - Lifetime
- 2001-05-04 JP JP2001581391A patent/JP4989834B2/ja not_active Expired - Lifetime
- 2001-05-04 AT AT01933039T patent/ATE403248T1/de not_active IP Right Cessation
- 2001-05-04 US US09/848,791 patent/US6590924B2/en not_active Expired - Lifetime
- 2001-05-04 WO PCT/US2001/014505 patent/WO2001084682A2/en active Application Filing
- 2001-05-04 CA CA002405852A patent/CA2405852A1/en not_active Abandoned
- 2001-05-04 AU AU2001259503A patent/AU2001259503A1/en not_active Abandoned
- 2001-05-04 DE DE60135106T patent/DE60135106D1/de not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8875460B2 (en) | 1999-11-05 | 2014-11-04 | Faus Group, Inc. | Direct laminated floor |
US8209928B2 (en) | 1999-12-13 | 2012-07-03 | Faus Group | Embossed-in-registration flooring system |
US7836648B2 (en) | 2002-05-03 | 2010-11-23 | Faus Group | Flooring system having complementary sub-panels |
US7836649B2 (en) | 2002-05-03 | 2010-11-23 | Faus Group, Inc. | Flooring system having microbevels |
US8099919B2 (en) | 2002-05-03 | 2012-01-24 | Faus Group | Flooring system having microbevels |
US8112958B2 (en) | 2002-05-03 | 2012-02-14 | Faus Group | Flooring system having complementary sub-panels |
US8181407B2 (en) | 2002-05-03 | 2012-05-22 | Faus Group | Flooring system having sub-panels |
US8448400B2 (en) | 2002-05-03 | 2013-05-28 | Faus Group | Flooring system having complementary sub-panels |
US8201377B2 (en) | 2004-11-05 | 2012-06-19 | Faus Group, Inc. | Flooring system having multiple alignment points |
Also Published As
Publication number | Publication date |
---|---|
US20020105990A1 (en) | 2002-08-08 |
EP1281221A2 (en) | 2003-02-05 |
US6590924B2 (en) | 2003-07-08 |
JP4989834B2 (ja) | 2012-08-01 |
EP1281221B8 (en) | 2008-10-15 |
WO2001084682A3 (en) | 2002-04-11 |
WO2001084682A2 (en) | 2001-11-08 |
DE60135106D1 (de) | 2008-09-11 |
CN1428018A (zh) | 2003-07-02 |
ATE403248T1 (de) | 2008-08-15 |
JP2003533037A (ja) | 2003-11-05 |
EP1281221B1 (en) | 2008-07-30 |
CA2405852A1 (en) | 2001-11-08 |
AU2001259503A1 (en) | 2001-11-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1240167C (zh) | 用于取样光栅分布型布拉格反射激光器的改进反射镜和腔 | |
JP3962014B2 (ja) | 抽出格子ブラッグ反射器に結合された抽出格子分布帰還波長可変半導体レーザ | |
CN103858294B (zh) | 单片集成的可调谐半导体激光器 | |
CN105356292B (zh) | 一种可调谐波长半导体激光器 | |
US9502861B2 (en) | Semiconductor laser | |
KR20150037863A (ko) | 소형 포토닉 플랫폼 | |
CN1823456A (zh) | 在二阶或高阶分布反馈激光器中抑制空间烧孔的方法和设备 | |
CN1841867A (zh) | 用于高效波长稳定的高功率激光器的低损耗光栅 | |
CN102751659B (zh) | 一种可调谐半导体激光器 | |
US20040151215A1 (en) | Tuneable laser | |
CN104184045A (zh) | 一种定波长单纵模工作的脊波导分布反馈半导体激光器 | |
CN108604774A (zh) | 半导体激光元件、衍射光栅结构以及衍射光栅 | |
CN105811242A (zh) | 周期性金属接触增益耦合分布反馈半导体激光器 | |
JP5950551B2 (ja) | Sd−octシステムの駆動制御方法 | |
JP7468148B2 (ja) | ビーム偏向システム | |
CN1706080A (zh) | 具有用于提供波长稳定化的衍射光栅的泵浦激光器的无扭折工作 | |
JP6452089B2 (ja) | 半導体レーザ装置 | |
GB2381123A (en) | Tuneable laser | |
JP2003515938A (ja) | ポンプレーザー用のモード選択性のフェーセット層 | |
EP1182753A2 (en) | Optical device with increased spectral width | |
JP2001007439A (ja) | 広い範囲の波長で同調可能な集積化された半導体装置及び広い範囲の波長で同調可能な半導体装置のための方法 | |
CN107516817A (zh) | 非对称结构相移光栅及dfb半导体激光器 | |
CN104242059A (zh) | 利用选择区域外延技术制作激光器阵列的方法 | |
CN1306668C (zh) | 激光模块中使用的半导体激光装置 | |
CN117317802A (zh) | 多波长半导体激光器及激光产生方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JDS UNIPHASE CORP. Free format text: FORMER OWNER: AGGILIT COMMUNICATION CO., LTD. Effective date: 20080829 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20080829 Address after: American California Patentee after: Flex Products Inc. A. JDS Unipha Address before: American California Patentee before: Agility Communications, Inc |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151029 Address after: American California Patentee after: JDS UNIPHASE CORPORATION Address before: American California Patentee before: Flex Products Inc. A. JDS Unipha |
|
CX01 | Expiry of patent term |
Granted publication date: 20060201 |
|
CX01 | Expiry of patent term |