CN1232437C - Method of air tight packaging micro computer electric system device using capillary tube method - Google Patents
Method of air tight packaging micro computer electric system device using capillary tube method Download PDFInfo
- Publication number
- CN1232437C CN1232437C CN 03142072 CN03142072A CN1232437C CN 1232437 C CN1232437 C CN 1232437C CN 03142072 CN03142072 CN 03142072 CN 03142072 A CN03142072 A CN 03142072A CN 1232437 C CN1232437 C CN 1232437C
- Authority
- CN
- China
- Prior art keywords
- seal ring
- mems device
- leading
- hole
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Micromachines (AREA)
Abstract
The present invention relates to a method for air-tightly packing an MEMS element by a capillary tube method, which is characterized in that (1) a leading-in line, a leading-out line, a leading-in hole and a leading-out hole of fusion welding flux are respectively manufactured on a wafer of the MEMS element and a wafer of a cavity; peripheral sealing rings are connected with the leading-in hole and the leading-out hole by the leading-in line and the leading-out line; (2) after contraposition, the corresponding sealing rings on the two wafers form metallized capillary tubes with the leading-in line and the leading-out line. In the process of welding, welding flux melts to enter through the leading-in hole and the leading-out hole and spread on the metal surfaces of the leading-in line, the leading-out line and the sealing rings; after all the sealing rings are infiltrated by the welding flux, welding flux liquid between the two sealing rings forms a sticking bridge; after the welding flux solidifies, the two wafers adhere together to form a sealing cavity. The present invention simplifies excessive intermediate sections of the air-tight packing of the MEMS element, improves production efficiency, and reduce the production cost. The present invention not only can realize the air-tight packing of the MEMS element in different atmospheres, but also can improve element airtight characteristics.
Description
Technical field
The present invention relates to a kind of method, or rather, relate to a kind of method, belong to MEMS device encapsulation field with capillary tube method level Hermetic Package MEMS device with capillary tube method level Hermetic Package mems device.
Background technology
MEMS (microelectromechanical system) is meant the Micrometer-Nanometer Processing Technology system that make, that integrate microsensor, micro parts, miniature actuator, signal processing, control circuit etc. that adopts.The MEMS device all has very wide application prospect in a lot of fields.Yet; in the MEMS device; contain movable member; these movable members are very fragile; very easily be subjected to the influence of the factors such as dust, air-flow, humidity, machinery in scribing and the assembling process, thereby cause the breaking-up of device or the overall performance of device to descend, therefore; must take the level Hermetic Package measure, protect these key positions.
In order to realize the level Hermetic Package of MEMS device, people have proposed multiple MEMS device level Hermetic Package method, and its basic thought is that the cover plate with an attached cavity is bonded to another and contains on the MEMS device wafer, thus the movable member of protection MEMS device.Now, the bonding method of MEMS device level Hermetic Package mainly contains: silex glass anode linkage, silicon silicon fusion bonding, glass Direct Bonding, low temperature glass bonding, organic adhesive bonding and scolder bonding etc.Silex glass anode linkage, silicon silicon fusion bonding and glass Direct Bonding technology often need can realize under higher temperature, as the anode linkage temperature is 450 ℃, silicon silicon fusion key temperature is up to 1000 ℃, high like this temperature is unfavorable to the MEMS device that requires the low stress level Hermetic Package, silex glass anode linkage, silicon silicon fusion bonding require the surfacing of bonding and smooth, any small mechanical mark will produce gas leakage on the surface, and influences hermetic properties.Low temperature glass bonding, organic adhesive bonding are implemented in level Hermetic Package MEMS device under the lower temperature, generally glass paste or organic adhesive are imprinted on the cover plate that has cavity or contain on the periphery of movable member MEMS device with method of printing, often the thickness of glass paste or organic adhesive is difficult to control, in the process of bonding, unnecessary glass paste or organic adhesive fusing, flow to the groove of MEMS device movable member, after the cooling, glass paste or organic adhesive will be firmly fixing MEMS device movable member, cause the MEMS device function to lose efficacy.Organic adhesive will discharge some solvents and micro-molecular gas in the process of bonding, be difficult to obtain good hermetic properties.
The scolder bonding is the very important method of level Hermetic Package MEMS device, and existing conventional method is to adopt reflow method that the periphery of the cavity on cover plate scolder seal ring is bonded to contain on the MEMS device periphery seal ring, forms level Hermetic Package MEMS device.Scolder is generally indium, tin, indium tin, slicker solder etc.Fig. 1 and Fig. 2 are respectively sectional view and the process charts with conventional method level Hermetic Package MEMS device.In Fig. 1 and Fig. 2, the scolder on the seal ring is gone up graphic plating at UBM (underbump metallization) and is formed, or the method formation of employing printing solder.These additional manufacturing process can make the decrease in yield of level Hermetic Package MEMS device.In the process of pre-bonding, except requiring precise dose and contraposition control, the anti-oxygen on the removal of scolder surface layer oxide film and scolder top layer is handled to pre-bonding and has been brought very big difficulty, needs interpolation equipment to solve these problems.All these will directly cause level Hermetic Package MEMS device cost to increase significantly.In the process of bonding, scolder forms the gas/liquid interface on the seal ring, and the scolder evaporation enters in the cavity of level Hermetic Package, and is deposited on the inner surface of cavity, forms fifth wheel, influences the electrical property of MEMS device.With conventional method level Hermetic Package MEMS device, as Fig. 1, also there is integrity problem in seal ring abutment wall 103, though, taked the control measure of subsiding of scolder, but, because itself there is defective in the scolder manufacture craft on the seal ring, thickness is difficult to accurate control, therefore, be difficult to obtain the seal ring abutment wall that thickness is even, structure is consistent, the hermetic properties of level Hermetic Package MEMS device is descended.
Summary of the invention
In order to reduce level Hermetic Package MEMS device cost, overcome all multifactor adverse effect in the existing MEMS device level Hermetic Package process, and improve the hermetic properties of level Hermetic Package seal ring abutment wall its performance.The objective of the invention is to propose adopt the method for capillary tube method level Hermetic Package MEMS device, this method not only can realize the level Hermetic Package of MEMS device at lower cost, improve the performance of level Hermetic Package MEMS device, and can also improve the hermetic properties of MEMS device level Hermetic Package.
The present invention solves the technical scheme that its technical problem takes: produce importing and exporting line and importing and exporting the hole of scolder on the wafer of MEMS device and cavity, these import and export line with peripheral seal ring with import and export the hole and couple together, after contraposition, corresponding seal ring and import and export line and will constitute the capillary that metallizes on the two plates, seal ring, importing and exporting line is the anti-oxidant and easy rete of wetting that is with the top layer that imports and exports the hole, in the process of welding, solder fusing, be easy to enter from importing and exporting the hole, easily sprawled by importing and exporting on line and the seal ring metal surface of wetting, and the scolder liquid of fusion is very big with the contact angle that imports and exports line and seal ring both sides oxide, thereby, the scolder liquid that can not is sprawled on the surface of oxide, produce capillarity, the scolder of fusing just enters on the seal ring from importing and exporting line, after seal ring is all by wetting, scolder liquid between two seal rings just forms sticking bridge, unnecessary scolder also can be by importing and exporting line and import and export orifice flow, naturally regulate needed amount of solder between two seal rings, after scolder solidifies, just two plates is bonded together, form seal chamber.Can obtain the seal ring abutment wall that thickness is even, structure is consistent like this, improve the hermetic properties of MEMS device level Hermetic Package.In order to control the height of seal ring abutment wall well, thoroughly eliminate the generation of fifth wheel in the cavity in the welding process, between cavity and weld-ring, produce retaining dam ring, this retaining dam ring is not in order to stop the inflow of scolder liquid, but in order to stop that the scolder steam is deposited in the cavity, producing fifth wheel influences the performance of MEMS device, retaining dam ring height is exactly the height of seal ring abutment wall, therefore, can control the size of cavity effectively, and control the thickness and the uniformity of scolder between the seal ring interlayer effectively, further improved the hermetic properties of level Hermetic Package MEMS device.
Beneficial effect of the present invention: the too much intermediate link of level Hermetic Package of having simplified the MEMS device, improved production efficiency, reduce production cost, not only can be implemented in level Hermetic Package MEMS device under the different atmosphere, and improved the hermetic properties of MEMS device level Hermetic Package.
Description of drawings
For advantage of the present invention and good effect are found full expression, the present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is previous MEMS device level Hermetic Package sectional view.
Fig. 2 is previous MEMS device level Hermetic Package process chart.
Fig. 3 is the plane of array MEMS device seal ring.
Fig. 4 is the plane of array cavity seal ring.
Fig. 5 is the plane of another kind of array cavity seal ring.
Fig. 6 imports and exports the hole sectional view after the contraposition among the embodiment 1.
Fig. 7 is the sectional view that two seal rings form metal capillary after the contraposition.
Fig. 8 is the sectional view that scolder liquid forms seal ring among the embodiment 1.
Fig. 9 is that scolder liquid solidifies the sectional view that forms seal ring.
Figure 10 imports and exports the hole sectional view after the contraposition among the embodiment 2,3.
Figure 11 is a soldering paste sectional view among the embodiment 2.
Figure 12 is a soldered ball sectional view among the embodiment 3.
In Fig. 3, in wafer 301, array MEMS device 306 usefulness semiconductor technologies are made, each MEMS device 306 periphery has a seal ring 305, the width of seal ring 305 is 300 μ m, seal ring 305 is by importing and exporting line 304 and importing and exporting hole 303 and be connected, the aperture that imports and exports hole 303 is 500 μ m, seal ring 305, import and export line 304 and can make of thin-film technique with the layer of metallized film that imports and exports hole 303, film layer structure is TiW/Cu/Ni/Au or Pd, is adhesion layer with TiW, thickness is about 500 , Cu is a conductive layer, and thickness is about 1 μ m, and Ni (3 μ m)/Au or Pd electroplate and form.Bonding region 307 is distributed in the outside of seal ring 305 peripheries, and is electrically connected by the formation of dielectric layer lower conductor with MEMS device 306.Locating hole 302 is used for and the contraposition of cavity wafer, during contraposition, can adopt parallel three pin pivot point layouts.
In Fig. 4, on wafer 401, among cavity 406 and Fig. 3 in the wafer 301 MEMS device 306 corresponding.Each cavity 406 periphery respectively has a retaining dam ring 408 and seal ring 405, retaining dam ring 408 is the silicon nitride film of chemical vapour deposition (CVD), silicon nitride film has determined to form the size of metal capillary, its thickness is preferably 20 μ m, the peripheral seal ring of MEMS device 306 305 is corresponding among seal ring 405 and Fig. 3, and its width also is 300 μ m.Seal ring 405 is by importing and exporting line 404 and importing and exporting hole 403 and be connected, and the preparation method of seal ring 405 is the same with the preparation method of seal ring 305 among Fig. 3.Hole frame 407 on the seal ring 405 peripheral sides is corresponding with the bonding region 307 among Fig. 3, after airtight soldering and sealing and scribing, hole frame 407 is convenient to detect the performance of MEMS device 306 after the level Hermetic Package, and convenient the electrical connection, constitutes integrated MEMS with peripheral configuration circuit.Locating hole 402 is used for and the contraposition of MEMS device wafer.
Fig. 5 is the plane of another kind of array cavity seal ring.Among Fig. 5 among cavity wafer 501 and Fig. 4 cavity wafer 401 different, in Fig. 5, seal ring 505 is connected with welding zone 503 by importing and exporting line 504, and produces scolder leadout hole 508 in the both sides of seal ring 505, the aperture of scolder leadout hole 508 is 500 μ m.
The specific embodiment
In Fig. 6, adopt parallel three pin pivot point layouts, will be with the wafer 301 of MEMS device to carry out contraposition with cavity wafer 401, after contraposition, last wafer imports and exports hole 303 and imports and exports hole 404 on same axle center, and this will help the turnover of liquid solder.Scolder can be that lead or lead-free solder are arranged.
Fig. 7 is a wafer 301 and wafer 401 carries out the sectional view that two seal rings after the contraposition form metal capillary.In Fig. 7, the seal ring 305 on the wafer 301 is corresponding with the seal ring 405 on the wafer 401, and its spacing is 10 μ m, and so just producing the cross section on retaining dam ring 406 peripheries is 300 * 10 μ m
2Metal capillary.Hole frame 407 on the seal ring 405 peripheral sides is corresponding with bonding region 307, is convenient to detect the performance of MEMS device 306 after the level Hermetic Package.
Fig. 8 is the schematic diagram that scolder liquid forms seal ring.With contraposition and the two plates up and down that fixes; immerse in the scolder liquid of fusion; atmosphere can be air; it also can be protective atmosphere; at first; the scolder liquid of fusion imports and exports hole 303 from metallization; 403 enter; owing to import and export line 304; 404 and seal ring 305; 405 have constituted the metallization capillary; and import and export line 304; 404 and seal ring 305; the top layer of 405 metalized film is Au or the Pd film that is easy to the scolder liquid-soaked of fusion; therefore, the scolder liquid of fusion will import and export line 304; sprawl on 404, when entering seal ring 305; 405 corner; form the cross road, close up at last to form and glue bridge seal ring 801a.When with contraposition and the two plates up and down that fixes, immerse in the scolder liquid of darker fusion, because the increase of the scolder liquid internal pressure of fusion will only can form the sticking bridge seal ring 801b of bigger radian, the surface tension of the scolder liquid of fusion at this moment also will increase.Because the both sides of seal ring 305,405 are oxide, the scolder liquid that can not of fusion soaks into its surface, and flows in the cavity.Because the scolder liquid of fusion produces Evaporation Phenomenon, therefore, the fifth wheel that 408 pairs on retaining dam ring is eliminated the scolder liquid evaporation generation of fusion plays a part very important, the height that keeps off dam ring 406 simultaneously plays regulating action to the height of seal ring abutment wall, control the thickness and the uniformity of scolder between the seal ring interlayer effectively, further improved the hermetic properties of level Hermetic Package MEMS device.
Fig. 9 is that scolder liquid solidifies the sectional view that forms seal ring.The two plates of dipping is taken out from the scolder liquid of fusion, unnecessary scolder liquid will flow out from importing and exporting line 304,404 and importing and exporting hole 303,404, naturally regulate the amount of 305,405 required scolders of seal ring, after the scolder liquid of fusion solidifies, can form the seal ring 901 of inferior bell shape.
Embodiment 2
Figure 10 is the distribution situation that imports and exports hole 303 and leadout hole 508 after wafer 301 and wafer 501 contrapositions.In Fig. 9, it is corresponding with welding zone 503 on the wafer 501 to import and export hole 303 on the wafer 301.Scolder leadout hole 508 is positioned at the middle place of two welding zones 503.
In Figure 11, click and enter soldering paste with point gum machine importing and exporting in the hole 303 on wafer 301, clicking and entering solder paste amounts should calculate according to the width of seal ring, the girth of distance, seal ring between two seal rings and the length that imports and exports line, should be 3 times of amount of calculation, and keep soldering paste excessive, soldering paste is coated on the welding zone 503 of wafer 501 because of the gravity effect, forms mushroom solder paste texture 1101.
The two plates of having put soldering paste is moved in the vacuum drying oven, operate by the welding curve, at first, vacuumize, the organic principle in the soldering paste is driven in preheating out of, improve temperature to setting value, solder fusing is along importing and exporting linear flow to seal ring, and from mating on four sides, form sticking bridge seal ring, excessive scolder can flow out from leadout hole 508, regulates the amount of required soldering paste between seal ring naturally.Then, furnace temperature is reduced to room temperature, scolder liquid solidifies the seal ring 901 that forms Fig. 9 Central Asia bell shape.
Embodiment 3
In Figure 12, insert soldered ball 1201 in the hole 303 with Place machine importing and exporting on the wafer 301 of Fig. 9, the volume of soldered ball 1201 should calculate according to the width of seal ring, the girth of distance, seal ring between two seal rings and the length that imports and exports line, should be 3 times of amount of calculation, and keep excess solder connection.
The two plates of having put soldered ball is moved in the vacuum drying oven, operate by the welding curve, at first, vacuumize, preheating, improve temperature to setting value, the soldered ball fusing is along importing and exporting linear flow to seal ring, and from mating on four sides, form sticking bridge seal ring, excessive scolder can flow out from leadout hole 508, regulates the amount of required soldering paste between seal ring naturally.Then, furnace temperature is reduced to room temperature, scolder liquid solidifies the seal ring 901 that forms Fig. 9 Central Asia bell shape.
Claims (6)
1. the method for a capillary tube method level Hermetic Package MEMS device is characterized in that:
(1) on the wafer of MEMS device wafer and cavity, respectively produce importing and exporting line and importing and exporting the hole of fusion welding, by importing and exporting line, with the seal ring of periphery with import and export the hole and couple together;
(2) after the contraposition, corresponding seal ring and import and export line and will constitute the capillary that metallizes on the two plates; In the process of welding, solder fusing enters from importing and exporting the hole, spread over and import and export on line and the seal ring metal surface, after seal ring was all by wetting, the scolder liquid between two seal rings just formed sticking bridge, after scolder solidified, two plates bonded together, and formed seal chamber.
2. the method with capillary tube method level Hermetic Package MEMS device according to claim 1, it is characterized in that: in the wafer of MEMS device, each MEMS device (306) periphery has a seal ring (305), the width of seal ring is 300 μ m, and the aperture that passing through of being attached thereto imports and exports the hole is 500 μ m.
3. the method with capillary tube method level Hermetic Package MEMS device according to claim 1 and 2, it is characterized in that: importing and exporting line is TiW/Cu/Ni/Au or TiW/Cu/Ni/Pd with the layer of metallized film structure that imports and exports the hole, TiW is an adhesion layer, thickness is about 500 , Cu is a conductive layer, thickness is about 1 μ m, and the Ni/Au or the Ni/Pd plating that import and export line and seal ring surface form, and thickness is 3 μ m.
4. the method with capillary tube method level Hermetic Package MEMS device according to claim 1, it is characterized in that: bonding region (307) is distributed in the outside of seal ring (305) periphery, and is electrically connected by the formation of dielectric layer lower conductor with MEMS device (306).
5. the method with capillary tube method level Hermetic Package MEMS device according to claim 1, it is characterized in that: the cavity in the cavity wafer (406) is corresponding with MEMS device (306); Each cavity (406) periphery respectively has a retaining dam ring (408) and seal ring (405); Seal ring (405) is corresponding with MEMS device periphery seal ring (305); Hole frame (407) on the peripheral side of seal ring (405) is corresponding with bonding region (307).
6. the method with capillary tube method level Hermetic Package MEMS device according to claim 1, it is characterized in that: excess solder goes out by importing and exporting orifice flow in the welding process, regulates amount of solder required between two seal rings automatically.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03142072 CN1232437C (en) | 2003-08-06 | 2003-08-06 | Method of air tight packaging micro computer electric system device using capillary tube method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03142072 CN1232437C (en) | 2003-08-06 | 2003-08-06 | Method of air tight packaging micro computer electric system device using capillary tube method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1513751A CN1513751A (en) | 2004-07-21 |
| CN1232437C true CN1232437C (en) | 2005-12-21 |
Family
ID=34240354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03142072 Expired - Fee Related CN1232437C (en) | 2003-08-06 | 2003-08-06 | Method of air tight packaging micro computer electric system device using capillary tube method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1232437C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7348193B2 (en) * | 2005-06-30 | 2008-03-25 | Corning Incorporated | Hermetic seals for micro-electromechanical system devices |
| CN100422071C (en) * | 2005-10-27 | 2008-10-01 | 中国科学院上海微***与信息技术研究所 | Disc grade packing tech. for micro mechanical acceleration counter |
| CN102963864B (en) * | 2012-12-11 | 2015-05-20 | 北京大学 | Method for sealing wafer-level micro-cavity based on BCB (benzocyclobutene) glue |
| CN109650323B (en) * | 2018-12-24 | 2020-11-03 | 烟台艾睿光电科技有限公司 | Solder isolation structure and electronic device |
-
2003
- 2003-08-06 CN CN 03142072 patent/CN1232437C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1513751A (en) | 2004-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN208767284U (en) | Chip-packaging structure | |
| US6964886B2 (en) | Methods of fabrication for flip-chip image sensor packages | |
| US6528344B2 (en) | Chip scale surface-mountable packaging method for electronic and MEMS devices | |
| CN102024716B (en) | The method of semiconductor device and manufacture semiconductor device | |
| CN1125975C (en) | Pressure sensor and its manufacturing method | |
| CN103318838B (en) | A kind of vacuum packaging method being applied to mems device | |
| CN102376672B (en) | Foundation island-free ball grid array packaging structure and manufacturing method thereof | |
| CN1320101A (en) | Method of and apparatus for sealing an hermetic lid to a microelectronic machine | |
| CN106783755A (en) | A kind of ceramic packaging substrate preparation method with copper facing box dam | |
| CN102194973B (en) | Wafer-grade packaging method of ultraviolet LED packaging structure | |
| CN205621732U (en) | Many cameras module | |
| WO2007145778A2 (en) | Mems device and method of fabricating the same | |
| CN101110411A (en) | Semiconductor package and its manufacturing method | |
| CN108529553B (en) | Graphene high-temperature pressure sensor packaging method | |
| CN102403283A (en) | Ball grid array packaging structure with basic islands and manufacturing method thereof | |
| CN102709259B (en) | Flip chip molding structure and method of non-array bump | |
| CN1232437C (en) | Method of air tight packaging micro computer electric system device using capillary tube method | |
| CN101295754A (en) | Flip-chip soldering encapsulation structure and method for light emitting diode | |
| JP2019504179A (en) | Method for preparing ceramic encapsulated substrate with copper-plated box dam | |
| US7038321B1 (en) | Method of attaching a flip chip device and circuit assembly formed thereby | |
| CN2626974Y (en) | Structure realizing gas tight packaging of micro-electro-mechanical system device | |
| JPH03155671A (en) | Solid-state image sensing device | |
| JPH09223812A (en) | Solar cell module and manufacturing method thereof | |
| CN1178288C (en) | Method for packaging thin semiconductor device with reversely mounted chip | |
| TWI620280B (en) | Method for preparing ceramic package substrate with copper-plated dam |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |