CN101295754A - Flip-chip soldering encapsulation structure and method for light emitting diode - Google Patents
Flip-chip soldering encapsulation structure and method for light emitting diode Download PDFInfo
- Publication number
- CN101295754A CN101295754A CNA2007100969848A CN200710096984A CN101295754A CN 101295754 A CN101295754 A CN 101295754A CN A2007100969848 A CNA2007100969848 A CN A2007100969848A CN 200710096984 A CN200710096984 A CN 200710096984A CN 101295754 A CN101295754 A CN 101295754A
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- Prior art keywords
- emitting diode
- light
- chip
- flip
- backlight unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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Abstract
The invention discloses a flip-chip packaging structure of a light emitting diode; a packaging socket is provided with a dent. Two conductive lead pins insulated with each other are arranged on the packaging socket; both of the pins are exposed in the dent and bulged out of the packaging socket. Two bump pads are provided on one of the surfaces of a light emitting diode chip. The light emitting diode chip is fixed in the packaging socket with the surface on which the bump pads are arranged facing the dent. Anisotropic conductive adhesive is arranged between the light emitting diode chip and the dent to be electrically connected with the bump pads and the lead pins.
Description
Technical field
The present invention relates to a kind of encapsulating structure and method for packing, particularly relate to a kind of package structure for LED and method for packing.
Background technology
The flip-chip encapsulation technology is widely used in the semiconductor subassembly encapsulation technology, and for light-emitting diode, the flip-chip encapsulation technology has the advantage that can promote luminous efficiency.But the known package structure for LED that is applicable to the flip-chip packaging technology use gold goal in order to the electrode of connection light-emitting diode and the conductive pin of encapsulating structure, thereby required equipment is different from traditional encapsulation process of light-emitting diode equipment.
The equipment of known flip-chip packaging technology needs ultrasonic energy at least, makes gold goal on the light-emitting diodes pipe electrode and the gold goal on the conductive pin, can produce enough heat and two gold goals that rub are melted and connect when friction.Therefore, import the cost increase that this kind new technology often follows very high equipment investment and new equipment adjustment to be brought.
Summary of the invention
The object of the present invention is to provide a kind of flip-chip soldering encapsulation structure and method for packing of light-emitting diode, solve problems such as above-mentioned known technology equipment investment height, cost height.
To achieve these goals, the invention provides a kind of flip-chip soldering encapsulation structure of light-emitting diode.This encapsulating structure comprises following assembly: an encapsulation base plate has a depression.Two conductive pins insulated from each other are arranged on the encapsulation base plate, and two conductive pins all are exposed in the depression and protrude from outside the encapsulation base plate.One light-emitting diode chip for backlight unit has two convex pads and is positioned at surface thereof.Light-emitting diode chip for backlight unit is fixed in the encapsulation base plate towards depression with the surface with convex pads.One anisotropic conductive is between light-emitting diode chip for backlight unit and depression, so as to electrically connecting convex pads and conductive pin.
To achieve these goals, the invention provides a kind of flip-chip sealing method of light-emitting diode: form a photoresist layer on a light-emitting diode chip for backlight unit.Borrow exposure and visualization way patterning photoresist layer to expose the zone that will form convex pads of light-emitting diode chip for backlight unit.Form the exposed region of several convex pads in light-emitting diode chip for backlight unit.Encapsulation base plate with a depression is provided.Borrow anisotropic conductive that light-emitting diode chip for backlight unit is pasted in the depression of encapsulation base plate with the surface with convex pads.
From the above mentioned, the flip-chip soldering encapsulation structure of light-emitting diode of the present invention and method can reduce many technology costs and man-hour, and can overcome the problem of support because of the uncomfortable cooperation ultrasonic waves of material flip-chip bonding technology.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
The flow chart that Fig. 1 to Fig. 4 makes for the convex pads of the light-emitting diode that is applicable to the flip-chip packaged type according to a preferred embodiment of the present invention a kind of; And
Fig. 5 to Fig. 6 is the flip-chip packaged type according to a kind of light-emitting diode of a preferred embodiment of the present invention.
Wherein, Reference numeral:
104: light-emitting diode chip for backlight unit 112a: conductive pin
106: photoresist layer 112b: conductive pin
106a: patterning depression 114: anisotropic conductive
107: transparent area 114a: conducting particles
108: convex pads 114b: viscose glue
109: surface 115: depression
110: reflector layer 115a: the depression bottom surface
111: surface 116: light emission direction
112: encapsulation base plate
Embodiment
As mentioned above, the present invention proposes a kind of flip-chip soldering encapsulation structure and method of light-emitting diode, below will cooperate preferred embodiment to describe the flip-chip soldering encapsulation structure and the method for this light-emitting diode in detail.
Please refer to Fig. 1 to Fig. 4, be a kind of profile of convex pads manufacturing process of light-emitting diode.The convex pads manufacture of this light-emitting diode adds photoetching process (photolithography) so as to forming convex pads on light-emitting diode chip for backlight unit rapidly, accurately.It is narrower that photoetching process helps that the distance between the convex pads can contract.
In Fig. 1, at first on uncut several light-emitting diode chip for backlight unit 104 still, form a photoresist layer 106.
In Fig. 2, photoresist layer 106 is followed with exposure and visualization way patterning, and then forms several patternings depressions 106a.106a is in order to expose the zone that will form convex pads of light-emitting diode chip for backlight unit 106 for several patterning depressions.
In Fig. 3, use evaporation, plating or mode of printing that the metal pad material is inserted in several patterning depressions 106a.
In Fig. 4, remove photoresist layer 106, and form convex pads 108 on light-emitting diode chip for backlight unit 104.
Please refer to Fig. 5 to Fig. 6, be a kind of flip-chip packaged type of light-emitting diode.After above-mentioned several light-emitting diode chip for backlight unit 104 were cut, then flip-chip was packaged in the encapsulation base plate 112 respectively.Encapsulation base plate 112 comprises two conductive pin 112a, 112b and a depression 115.Two conductive pin 112a, 112b all are exposed in the depression 115 and protrude from outside the encapsulation base plate 112.Two conductive pin 112a, 112b protrude from encapsulation base plate 112 part outward in order to be welded in the usefulness of conduct electric connection on another circuit substrate (not shown).Before light-emitting diode chip for backlight unit 104 is not pasted in the depression 115 of encapsulation base plate 112 as yet, insert an anisotropic conductive 114 (Anisotropic Conductive Paste) earlier.Anisotropic conductive 114 is mixtures of a kind of conducting particles 114a and viscose glue 114b.In the time of in light-emitting diode chip for backlight unit 104 is pasted on depression 115, partially conductive particle 114a is in order to electrically connect convex pads 108 and conductive pin 112a, 112b.But, because of conducting particles 114a coats less than the gap and the insulated viscose glue 114b of light-emitting diode chip for backlight unit 104 with depression bottom surface 115a, so insulate between two convex pads 108 or two conductive pin 112a, the 112b.Anisotropic conductive 114 can be borrowed the baking box baking and accelerated solidification.After light-emitting diode chip for backlight unit 104 is pasted on depression 115, then can inserts transparent enclosure colloid (not shown) light-emitting diode chip for backlight unit 104 is fixed in the depression 115.
In addition, can be in light-emitting diode chip for backlight unit 104, making increases a reflector layer 110 (a for example metal level) (for example P type electrode district) in transparent area 107.The purpose of reflector layer 110 is to stop and reflect towards surface 109 light, and light-emitting diode chip for backlight unit 104 is concentrated from surperficial 111 bright dippings (for example along direction 116), makes light-emitting diode chip for backlight unit 104 light extraction efficiencies better.
By the invention described above preferred embodiment as can be known, use the flip-chip soldering encapsulation structure and the method for light-emitting diode of the present invention, can when volume production, reduce many costs and man-hour than known ultrasonic waves gold/golden flip-chip bonding technology.In addition, this flip-chip soldering encapsulation structure and method can overcome the problem of support because of the uncomfortable cooperation ultrasonic waves of material flip-chip bonding technology.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (12)
1, a kind of flip-chip soldering encapsulation structure of light-emitting diode is characterized in that, comprises at least:
One encapsulation base plate has a depression;
Two conductive pins insulated from each other are arranged on this encapsulation base plate, and this two conductive pin all is exposed in this depression and protrudes from outside this encapsulation base plate;
One light-emitting diode chip for backlight unit has two convex pads and is positioned at surface thereof, and this light-emitting diode chip for backlight unit is fixed in this encapsulation base plate towards this depression with this surface with convex pads; And
One anisotropic conductive is between this light-emitting diode chip for backlight unit and this depression, so as to electrically connecting this convex pads and this conductive pin.
2, the flip-chip soldering encapsulation structure of light-emitting diode according to claim 1, it is characterized in that, this anisotropic conductive comprises several conducting particless and viscose glue, in the time of in light-emitting diode chip for backlight unit is pasted on this depression, the part of these conducting particless is in order to electrically connect this convex pads and this conductive pin.
3, the flip-chip soldering encapsulation structure of light-emitting diode according to claim 1 is characterized in that, has a reflector layer in this light-emitting diode chip for backlight unit near this surface with convex pads.
4, the flip-chip soldering encapsulation structure of light-emitting diode according to claim 3 is characterized in that, this reflector layer is positioned at a transparent area of this light-emitting diode chip for backlight unit.
5, the flip-chip soldering encapsulation structure of light-emitting diode according to claim 4 is characterized in that, this transparent area is a P type electrode district.
6, a kind of flip-chip sealing method of light-emitting diode is characterized in that, comprises at least:
Form a photoresist layer on a light-emitting diode chip for backlight unit;
Borrow exposure and this photoresist layer of visualization way patterning to expose the zone that will form convex pads of this light-emitting diode chip for backlight unit;
Form the exposed region of several convex pads in this light-emitting diode chip for backlight unit;
Encapsulation base plate with a depression is provided; And
Borrow anisotropic conductive that this light-emitting diode chip for backlight unit is pasted in this depression of this encapsulation base plate with this surface with convex pads.
7, the flip-chip sealing method of light-emitting diode according to claim 6 is characterized in that, this anisotropic conductive comprises several conducting particless and viscose glue.
8, the flip-chip sealing method of light-emitting diode according to claim 6 is characterized in that, this encapsulation base plate comprises two conductive pins, and this two conductive pin all is exposed to this depression and protrudes from outside this encapsulation base plate.
9, the flip-chip sealing method of light-emitting diode according to claim 6 is characterized in that, has a reflector layer in this light-emitting diode chip for backlight unit near this surface with convex pads.
10, the flip-chip sealing method of light-emitting diode according to claim 9 is characterized in that, this reflector layer is positioned at a transparent area of this light-emitting diode chip for backlight unit.
11, the flip-chip sealing method of light-emitting diode according to claim 10 is characterized in that, this transparent area is a P type electrode district.
12, the flip-chip sealing method of light-emitting diode according to claim 6 is characterized in that, these convex pads are formed at the exposed region of this light-emitting diode chip for backlight unit with evaporation, plating or mode of printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100969848A CN101295754A (en) | 2007-04-26 | 2007-04-26 | Flip-chip soldering encapsulation structure and method for light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100969848A CN101295754A (en) | 2007-04-26 | 2007-04-26 | Flip-chip soldering encapsulation structure and method for light emitting diode |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910159314A Division CN101640245A (en) | 2007-04-26 | 2007-04-26 | Flip-chip sealing method of light emitting diode (LED) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101295754A true CN101295754A (en) | 2008-10-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100969848A Pending CN101295754A (en) | 2007-04-26 | 2007-04-26 | Flip-chip soldering encapsulation structure and method for light emitting diode |
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| Country | Link |
|---|---|
| CN (1) | CN101295754A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237348A (en) * | 2010-04-20 | 2011-11-09 | 鸿富锦精密工业（深圳）有限公司 | LED microarray packaging structure and manufacturing method thereof |
| CN102244164A (en) * | 2011-07-15 | 2011-11-16 | 财团法人成大研究发展基金会 | Light-emitting diode crystalline grain modules, encapsulation method thereof and removal jig thereof |
| CN102779919A (en) * | 2011-05-12 | 2012-11-14 | 展晶科技(深圳)有限公司 | Semiconductor encapsulation structure |
| CN102800778A (en) * | 2011-05-27 | 2012-11-28 | 东莞市福地电子材料有限公司 | Light-emitting diode with inverted chip and manufacturing method of light-emitting diode |
| CN103378282A (en) * | 2012-04-27 | 2013-10-30 | 展晶科技(深圳)有限公司 | Method for manufacturing light emitting diode encapsulating structures |
| CN104091865A (en) * | 2014-07-25 | 2014-10-08 | 胡溢文 | Method for preparing horizontal flip-chip |
| CN105914268A (en) * | 2016-05-30 | 2016-08-31 | 深圳市德润达光电股份有限公司 | LED upside-down mounting process and LED upside-down mounting structure |
| CN108803149A (en) * | 2018-07-20 | 2018-11-13 | 京东方科技集团股份有限公司 | Area source and preparation method thereof and liquid crystal display device |
| CN111867245A (en) * | 2020-06-05 | 2020-10-30 | 深圳市隆利科技股份有限公司 | MiniLED substrate, module and module manufacturing method |
-
2007
- 2007-04-26 CN CNA2007100969848A patent/CN101295754A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237348A (en) * | 2010-04-20 | 2011-11-09 | 鸿富锦精密工业（深圳）有限公司 | LED microarray packaging structure and manufacturing method thereof |
| CN102779919A (en) * | 2011-05-12 | 2012-11-14 | 展晶科技(深圳)有限公司 | Semiconductor encapsulation structure |
| CN102779919B (en) * | 2011-05-12 | 2015-07-08 | 展晶科技(深圳)有限公司 | Semiconductor encapsulation structure |
| CN102800778A (en) * | 2011-05-27 | 2012-11-28 | 东莞市福地电子材料有限公司 | Light-emitting diode with inverted chip and manufacturing method of light-emitting diode |
| CN102800778B (en) * | 2011-05-27 | 2015-03-18 | 东莞市福地电子材料有限公司 | Light-emitting diode with inverted chip and manufacturing method of light-emitting diode |
| CN102244164A (en) * | 2011-07-15 | 2011-11-16 | 财团法人成大研究发展基金会 | Light-emitting diode crystalline grain modules, encapsulation method thereof and removal jig thereof |
| CN102244164B (en) * | 2011-07-15 | 2013-11-06 | 财团法人成大研究发展基金会 | Light-emitting diode crystalline grain modules, encapsulation method thereof and removal jig thereof |
| CN103378282A (en) * | 2012-04-27 | 2013-10-30 | 展晶科技(深圳)有限公司 | Method for manufacturing light emitting diode encapsulating structures |
| CN104091865A (en) * | 2014-07-25 | 2014-10-08 | 胡溢文 | Method for preparing horizontal flip-chip |
| CN105914268A (en) * | 2016-05-30 | 2016-08-31 | 深圳市德润达光电股份有限公司 | LED upside-down mounting process and LED upside-down mounting structure |
| CN108803149A (en) * | 2018-07-20 | 2018-11-13 | 京东方科技集团股份有限公司 | Area source and preparation method thereof and liquid crystal display device |
| CN111867245A (en) * | 2020-06-05 | 2020-10-30 | 深圳市隆利科技股份有限公司 | MiniLED substrate, module and module manufacturing method |
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| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20081029 |