CN1223908C - 形成图形的方法和在其中使用的处理剂 - Google Patents

形成图形的方法和在其中使用的处理剂 Download PDF

Info

Publication number: CN1223908C
Authority: CN; China
Prior art keywords: photoresist film; treating agent; chemistry; photoresist; chemically amplified
Prior art date: 2000-11-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CNB018188796A

Other languages

English (en)

Chinese (zh)

Other versions

CN1474962A (zh

Inventor

居岛一叶

高野祐辅

田中初幸

船户觉

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Merck Patent GmbH

Original Assignee

AZ Electronic Materials Japan Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-11-15

Filing date

2001-10-24

Publication date

2005-10-19

2001-10-24 Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd

2004-02-11 Publication of CN1474962A publication Critical patent/CN1474962A/zh

2005-10-19 Application granted granted Critical

2005-10-19 Publication of CN1223908C publication Critical patent/CN1223908C/zh

2021-10-24 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 35
239000003795 chemical substances by application Substances 0.000 claims abstract description 90
229920002120 photoresistant polymer Polymers 0.000 claims abstract description 61
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
238000011161 development Methods 0.000 claims abstract description 8
238000001035 drying Methods 0.000 claims abstract description 6
-1 perfluoro alkyl sulfonic acid Chemical compound 0.000 claims description 52
238000000576 coating method Methods 0.000 claims description 21
239000011248 coating agent Substances 0.000 claims description 20
239000000758 substrate Substances 0.000 claims description 13
229940124530 sulfonamide Drugs 0.000 claims description 13
150000001412 amines Chemical class 0.000 claims description 10
230000003321 amplification Effects 0.000 claims description 9
230000015572 biosynthetic process Effects 0.000 claims description 9
238000003199 nucleic acid amplification method Methods 0.000 claims description 9
229920003169 water-soluble polymer Polymers 0.000 claims description 7
238000012545 processing Methods 0.000 claims description 5
150000007524 organic acids Chemical class 0.000 abstract description 13
239000002253 acid Substances 0.000 abstract description 8
238000009736 wetting Methods 0.000 abstract 1
238000011282 treatment Methods 0.000 description 21
WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 12
150000003863 ammonium salts Chemical class 0.000 description 10
239000000243 solution Substances 0.000 description 10
229920000036 polyvinylpyrrolidone Polymers 0.000 description 9
239000001267 polyvinylpyrrolidone Substances 0.000 description 9
235000013855 polyvinylpyrrolidone Nutrition 0.000 description 9
238000002360 preparation method Methods 0.000 description 8
150000003839 salts Chemical class 0.000 description 7
150000003460 sulfonic acids Chemical class 0.000 description 7
XGIKILRODBEJIL-UHFFFAOYSA-N 1-(ethylamino)ethanol Chemical compound CCNC(C)O XGIKILRODBEJIL-UHFFFAOYSA-N 0.000 description 6
RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
230000002378 acidificating effect Effects 0.000 description 6
230000007797 corrosion Effects 0.000 description 6
238000005260 corrosion Methods 0.000 description 6
238000005516 engineering process Methods 0.000 description 6
229910052710 silicon Inorganic materials 0.000 description 6
239000010703 silicon Substances 0.000 description 6
229920003171 Poly (ethylene oxide) Polymers 0.000 description 5
238000005530 etching Methods 0.000 description 5
239000000203 mixture Substances 0.000 description 5
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
239000002585 base Substances 0.000 description 4
KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 4
239000003960 organic solvent Substances 0.000 description 4
239000011347 resin Substances 0.000 description 4
229920005989 resin Polymers 0.000 description 4
239000011342 resin composition Substances 0.000 description 4
239000000126 substance Substances 0.000 description 4
ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
239000003513 alkali Substances 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000000463 material Substances 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
230000035945 sensitivity Effects 0.000 description 3
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical group COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
239000004721 Polyphenylene oxide Substances 0.000 description 2
239000004372 Polyvinyl alcohol Substances 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
239000002671 adjuvant Substances 0.000 description 2
150000005215 alkyl ethers Chemical class 0.000 description 2
125000000217 alkyl group Chemical group 0.000 description 2
229910021529 ammonia Inorganic materials 0.000 description 2
239000002280 amphoteric surfactant Substances 0.000 description 2
239000003945 anionic surfactant Substances 0.000 description 2
229960003237 betaine Drugs 0.000 description 2
239000004305 biphenyl Substances 0.000 description 2
235000010290 biphenyl Nutrition 0.000 description 2
150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
235000014113 dietary fatty acids Nutrition 0.000 description 2
238000010894 electron beam technology Methods 0.000 description 2
238000011156 evaluation Methods 0.000 description 2
239000000194 fatty acid Substances 0.000 description 2
229930195729 fatty acid Natural products 0.000 description 2
150000002430 hydrocarbons Chemical class 0.000 description 2
FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical group O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
238000002156 mixing Methods 0.000 description 2
239000002736 nonionic surfactant Substances 0.000 description 2
238000005457 optimization Methods 0.000 description 2
235000005985 organic acids Nutrition 0.000 description 2
ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
229920000570 polyether Polymers 0.000 description 2
229920001451 polypropylene glycol Polymers 0.000 description 2
229920002451 polyvinyl alcohol Polymers 0.000 description 2
239000002904 solvent Substances 0.000 description 2
QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Substances [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
238000007669 thermal treatment Methods 0.000 description 2
HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 2
FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
AXRSOGFYDSXLQX-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluorohexanedioic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(O)=O AXRSOGFYDSXLQX-UHFFFAOYSA-N 0.000 description 1
OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical group FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
KBFJHOCTSIMQKL-UHFFFAOYSA-N 3-methoxycarbonylbut-3-enoic acid Chemical class COC(=O)C(=C)CC(O)=O KBFJHOCTSIMQKL-UHFFFAOYSA-N 0.000 description 1
OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical group C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical group OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical group COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
241001597008 Nomeidae Species 0.000 description 1
239000004642 Polyimide Substances 0.000 description 1
229920002675 Polyoxyl Polymers 0.000 description 1
239000004743 Polypropylene Substances 0.000 description 1
OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical group CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
ZUQAPLKKNAQJAU-UHFFFAOYSA-N acetylenediol Chemical compound OC#CO ZUQAPLKKNAQJAU-UHFFFAOYSA-N 0.000 description 1
230000002411 adverse Effects 0.000 description 1
150000001298 alcohols Chemical class 0.000 description 1
239000012670 alkaline solution Substances 0.000 description 1
150000001336 alkenes Chemical class 0.000 description 1
150000004996 alkyl benzenes Chemical class 0.000 description 1
239000007864 aqueous solution Substances 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
229920001400 block copolymer Polymers 0.000 description 1
150000007516 brønsted-lowry acids Chemical class 0.000 description 1
150000007528 brønsted-lowry bases Chemical class 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000003153 chemical reaction reagent Substances 0.000 description 1
HGAZMNJKRQFZKS-UHFFFAOYSA-N chloroethene;ethenyl acetate Chemical compound ClC=C.CC(=O)OC=C HGAZMNJKRQFZKS-UHFFFAOYSA-N 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
230000006378 damage Effects 0.000 description 1
LDCRTTXIJACKKU-ARJAWSKDSA-N dimethyl maleate Chemical group COC(=O)\C=C/C(=O)OC LDCRTTXIJACKKU-ARJAWSKDSA-N 0.000 description 1
238000004821 distillation Methods 0.000 description 1
125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
239000000428 dust Substances 0.000 description 1
230000003628 erosive effect Effects 0.000 description 1
150000002168 ethanoic acid esters Chemical class 0.000 description 1
150000004665 fatty acids Chemical class 0.000 description 1
238000001914 filtration Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
230000010354 integration Effects 0.000 description 1
229910052740 iodine Inorganic materials 0.000 description 1
239000011630 iodine Substances 0.000 description 1
238000005342 ion exchange Methods 0.000 description 1
150000002576 ketones Chemical class 0.000 description 1
239000007788 liquid Substances 0.000 description 1
239000011976 maleic acid Substances 0.000 description 1
VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid group Chemical group C(\C=C/C(=O)O)(=O)O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000002184 metal Substances 0.000 description 1
150000001455 metallic ions Chemical class 0.000 description 1
125000005395 methacrylic acid group Chemical group 0.000 description 1
LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
238000010422 painting Methods 0.000 description 1
239000002798 polar solvent Substances 0.000 description 1
229920001223 polyethylene glycol Polymers 0.000 description 1
229920001721 polyimide Polymers 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
229920001155 polypropylene Polymers 0.000 description 1
229920001709 polysilazane Polymers 0.000 description 1
150000003242 quaternary ammonium salts Chemical class 0.000 description 1
238000002310 reflectometry Methods 0.000 description 1
230000001105 regulatory effect Effects 0.000 description 1
238000011160 research Methods 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
238000001179 sorption measurement Methods 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
USPTVMVRNZEXCP-UHFFFAOYSA-N sulfamoyl fluoride Chemical compound NS(F)(=O)=O USPTVMVRNZEXCP-UHFFFAOYSA-N 0.000 description 1
239000004094 surface-active agent Substances 0.000 description 1
125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

Landscapes

Physics & Mathematics (AREA)
Spectroscopy & Molecular Physics (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Photosensitive Polymer And Photoresist Processing (AREA)
Materials For Photolithography (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

CNB018188796A 2000-11-15 2001-10-24 形成图形的方法和在其中使用的处理剂 Expired - Fee Related CN1223908C (zh)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP347661/2000		2000-11-15
JP2000347661A JP2002148820A (ja)	2000-11-15	2000-11-15	パターン形成方法及びこの方法に使用される処理剤
JP347661/00		2000-11-15

Publications (2)

Publication Number	Publication Date
CN1474962A CN1474962A (zh)	2004-02-11
CN1223908C true CN1223908C (zh)	2005-10-19

Family

ID=18821354

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CNB018188796A Expired - Fee Related CN1223908C (zh)	2000-11-15	2001-10-24	形成图形的方法和在其中使用的处理剂

Country Status (8)

Country	Link
US (1)	US7018785B2 (ko)
EP (1)	EP1338923A4 (ko)
JP (1)	JP2002148820A (ko)
KR (1)	KR100825657B1 (ko)
CN (1)	CN1223908C (ko)
MY (1)	MY140694A (ko)
TW (1)	TW583517B (ko)
WO (1)	WO2002041081A1 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20050164122A1 (en) *	2004-01-26	2005-07-28	Matsushita Electric Industrial Co., Ltd.	Chemically amplified resist and pattern formation method
WO2005103832A1 (ja) *	2004-04-23	2005-11-03	Tokyo Ohka Kogyo Co., Ltd.	レジストパターン形成方法及び複合リンス液
JP4493393B2 (ja) *	2004-04-23	2010-06-30	東京応化工業株式会社	リソグラフィー用リンス液
KR101236120B1 (ko)	2004-10-26	2013-02-28	가부시키가이샤 니콘	기판 처리 방법, 노광 장치 및 디바이스 제조 방법
JP4485913B2 (ja) *	2004-11-05	2010-06-23	東京応化工業株式会社	レジスト組成物の製造方法およびレジスト組成物
JP5008280B2 (ja) *	2004-11-10	2012-08-22	株式会社Ｓｏｋｕｄｏ	基板処理装置および基板処理方法
JP4794232B2 (ja) *	2004-12-06	2011-10-19	株式会社Ｓｏｋｕｄｏ	基板処理装置
JP5154007B2 (ja)	2004-12-06	2013-02-27	株式会社Ｓｏｋｕｄｏ	基板処理装置
JP4926433B2 (ja) *	2004-12-06	2012-05-09	株式会社Ｓｏｋｕｄｏ	基板処理装置および基板処理方法
JP4585299B2 (ja) *	2004-12-09	2010-11-24	東京応化工業株式会社	リソグラフィー用リンス液及びそれを用いたレジストパターン形成方法
JP4237184B2 (ja) *	2005-03-31	2009-03-11	エルピーダメモリ株式会社	半導体装置の製造方法
JP4761907B2 (ja) *	2005-09-28	2011-08-31	株式会社Ｓｏｋｕｄｏ	基板処理装置
JP4654119B2 (ja) *	2005-11-29	2011-03-16	東京エレクトロン株式会社	塗布・現像装置及び塗布・現像方法
JP5018388B2 (ja) *	2007-10-11	2012-09-05	東京エレクトロン株式会社	塗布、現像装置、塗布、現像方法及び記憶媒体
JP2010128464A (ja) *	2008-12-01	2010-06-10	Az Electronic Materials Kk	レジストパターン形成方法
WO2014088018A1 (ja) *	2012-12-07	2014-06-12	富士フイルム株式会社	硬化膜の製造方法、硬化膜、液晶表示装置および有機ｅｌ表示装置
JP6089667B2 (ja) *	2012-12-13	2017-03-08	大日本印刷株式会社	レジスト付きフォトマスクブランクスの製造方法、および、フォトマスクの製造方法
TWI558850B (zh) *	2014-03-29	2016-11-21	精密聚合物股份有限公司	電子零件用處理液及電子零件之製造方法
TWI559082B (zh)	2014-07-07	2016-11-21	財團法人工業技術研究院	生質材料與其形成方法與印刷電路板

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
SG43691A1 (en)	1991-06-28	1997-11-14	Ibm	Top antireflective coating films
JP2961975B2 (ja) *	1991-08-06	1999-10-12	日本電気株式会社	微細パターンの形成方法
US5514526A (en) *	1992-06-02	1996-05-07	Mitsubishi Chemical Corporation	Fluorine-containing composition for forming anti-reflection film on resist surface and pattern formation method
JPH05341536A (ja) *	1992-06-12	1993-12-24	Toshiba Corp	レジストパターンの形成方法
JP3300089B2 (ja)	1993-02-15	2002-07-08	クラリアントインターナショナルリミテッド	ポジ型放射感応性混合物
JPH06242605A (ja)	1993-02-15	1994-09-02	Hoechst Japan Ltd	ポジ型放射感応性混合物
JPH06267838A (ja) *	1993-03-11	1994-09-22	Hitachi Ltd	レジストパターンの形成方法
JP2803549B2 (ja) *	1993-12-21	1998-09-24	信越化学工業株式会社	光反射性防止材料及びパターン形成方法
JP3402415B2 (ja)	1994-03-03	2003-05-06	沖電気工業株式会社	レジストパターン形成方法
JPH086256A (ja) *	1994-06-24	1996-01-12	Mitsubishi Electric Corp	レジストパターンの形成方法および該方法に用いられる酸性の水溶性材料組成物
JPH0980753A (ja)	1995-09-13	1997-03-28	Toshiba Corp	感光性組成物
US5879853A (en) *	1996-01-18	1999-03-09	Kabushiki Kaisha Toshiba	Top antireflective coating material and its process for DUV and VUV lithography systems
JP3694703B2 (ja) *	1996-04-25	2005-09-14	Ａｚエレクトロニックマテリアルズ株式会社	反射防止コーティング用組成物
JPH1195442A (ja) *	1997-09-24	1999-04-09	Sharp Corp	フォトレジストパターン形成方法
JP3673399B2 (ja) *	1998-06-03	2005-07-20	クラリアントインターナショナルリミテッド	反射防止コーティング用組成物
JP3967466B2 (ja) *	1998-06-19	2007-08-29	信越化学工業株式会社	反射防止膜材料
KR100647026B1 (ko) *	1998-11-20	2006-11-17	에이제토 엘렉토로닉 마티리알즈 가부시키가이샤	기판 처리제 조성물 및 이를 이용한 내식막 패턴 형성방법

2000
- 2000-11-15 JP JP2000347661A patent/JP2002148820A/ja active Pending
2001
- 2001-10-24 WO PCT/JP2001/009320 patent/WO2002041081A1/ja active Application Filing
- 2001-10-24 EP EP01978871A patent/EP1338923A4/en not_active Withdrawn
- 2001-10-24 CN CNB018188796A patent/CN1223908C/zh not_active Expired - Fee Related
- 2001-10-24 US US10/416,412 patent/US7018785B2/en not_active Expired - Lifetime
- 2001-10-24 KR KR1020037006529A patent/KR100825657B1/ko not_active IP Right Cessation
- 2001-10-26 MY MYPI20014966A patent/MY140694A/en unknown
- 2001-11-06 TW TW090127496A patent/TW583517B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
KR100825657B1 (ko)	2008-04-29
US20040053170A1 (en)	2004-03-18
JP2002148820A (ja)	2002-05-22
EP1338923A4 (en)	2007-04-11
MY140694A (en)	2010-01-15
EP1338923A1 (en)	2003-08-27
US7018785B2 (en)	2006-03-28
TW583517B (en)	2004-04-11
KR20030051815A (ko)	2003-06-25
WO2002041081A1 (fr)	2002-05-23
CN1474962A (zh)	2004-02-11

Legal Events

Date	Code	Title	Description
2004-02-11	C06	Publication
2004-02-11	PB01	Publication
2004-04-21	C10	Entry into substantive examination
2004-04-21	SE01	Entry into force of request for substantive examination
2005-04-27	ASS	Succession or assignment of patent right	Owner name: AZ ELECTRON MATERIAL ( JAPAN )) CO., LTD. Free format text: FORMER OWNER: CLARIANT INTERNATIONAL LTD. Effective date: 20050325
2005-04-27	C41	Transfer of patent application or patent right or utility model
2005-04-27	TA01	Transfer of patent application right	Effective date of registration: 20050325 Address after: Japan Tokyo (113-0021) the Beijing area of the Komagome two chome 28 No. 8 Green Beijing office building Applicant after: Clariant Int Ltd. Address before: Mu Tengci, Switzerland Applicant before: Clariant International Ltd.
2005-10-19	C14	Grant of patent or utility model
2005-10-19	GR01	Patent grant
2012-06-27	ASS	Succession or assignment of patent right	Owner name: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Free format text: FORMER OWNER: AZ ELECTRONIC MATERIAL (JAPAN) CO., LTD. Effective date: 20120522
2012-06-27	C41	Transfer of patent application or patent right or utility model
2012-06-27	TR01	Transfer of patent right	Effective date of registration: 20120522 Address after: Japan Tokyo (113-0021) the Beijing area of the Komagome two chome 28 No. 8 Green Beijing office building Patentee after: AZ Electronic Materials (Japan) K. K. Address before: Japan Tokyo (113-0021) the Beijing area of the Komagome two chome 28 No. 8 Green Beijing office building Patentee before: AZ electronic materials (Japan) Co., Ltd.
2015-05-06	ASS	Succession or assignment of patent right	Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Effective date: 20150413
2015-05-06	C41	Transfer of patent application or patent right or utility model
2015-05-06	TR01	Transfer of patent right	Effective date of registration: 20150413 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Japan's Tokyo Bunkyo the Komagome two chome 28 No. 8 Green Beijing office building Patentee before: AZ Electronic Materials (Japan) K. K.
2019-10-18	CF01	Termination of patent right due to non-payment of annual fee	Granted publication date: 20051019 Termination date: 20181024
2019-10-18	CF01	Termination of patent right due to non-payment of annual fee

Publication	Publication Date	Title
CN1223908C (zh)	2005-10-19	形成图形的方法和在其中使用的处理剂
JP6408647B2 (ja)	2018-10-17	フォトリソグラフィーの組成物および方法
KR101720967B1 (ko)	2017-03-29	기판 처리액 및 이것을 사용한 레지스트 기판 처리 방법
JP2005157259A (ja)	2005-06-16	レジスト上層膜形成材料、およびこれを用いたレジストパターン形成方法
JP3320402B2 (ja)	2002-09-03	現像欠陥防止プロセス及び材料
KR20050075328A (ko)	2005-07-20	반사 방지 코팅용 조성물 및 패턴 형성방법
US20100324330A1 (en)	2010-12-23	Process for Preventing Development Defect and Composition for Use in the Same
CN1335945A (zh)	2002-02-13	抗反射涂层组合物
CN1815372A (zh)	2006-08-09	图案形成方法
US8158328B2 (en)	2012-04-17	Composition for formation of anti-reflection film, and method for formation of resist pattern using the same