CN1202705A - 制备稀土-钡-铜酸盐超导体的方法 - Google Patents

制备稀土-钡-铜酸盐超导体的方法 Download PDF

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Publication number
CN1202705A
CN1202705A CN98115117.5A CN98115117A CN1202705A CN 1202705 A CN1202705 A CN 1202705A CN 98115117 A CN98115117 A CN 98115117A CN 1202705 A CN1202705 A CN 1202705A
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barium
rare earth
cuprates
metal substrate
melting point
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J·克里斯蒂安森
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Topsoe AS
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Haldor Topsoe AS
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0801Manufacture or treatment of filaments or composite wires

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

一种以在金属带、金属丝上的厚膜或以管中粉末形式制备稀土-钡-铜酸盐超导体的方法,包括步骤:将具有高熔点的稀土-钡-铜酸盐籽晶和具有较低熔点的稀土-钡-铜酸盐粉末的混合物承载在金属基片上;将该基片上的承载材料在高熔点稀土-钡-铜酸盐籽晶和金属基片的熔点以下和在低熔点粉末的熔点以上温度进行热处理;和将热处理过的承载材料在该材料熔化温度以下冷却。

Description

制备稀土-钡-铜酸盐超导体的方法
本发明涉及一种通过在金属基片上的超导材料的熔体织构来制备稀土-钡-铜酸盐超导体的方法。
在空气中通过超出在空气中银熔点的在空气中高熔点材料在银基片上的钇稀土-钡-铜酸盐超导材料的熔体织构早已被禁止。
本发明方法基于作为氧分压(P(O2))函数的稀土-钡-铜酸盐超导体(RE123,RE=Y、La、Nd、Sm、Eu、Gd、Dy、Ho、Er、Tm、Yb、Lu)以及非超导的Pr123相的熔点(包晶分解温度)的变化和银的熔点。以前已证明,常规设计的RE123,RE1+yBa2-yCu3O7-x(0≤y≤0.9,0≤X≤1)的熔点随P(O2)的减小而降低。而众所周知的是,银的熔点随P(O2)的减小而增加。所以,在低P(O2)下,在银的熔点以下熔化一些RE123相是可能的。
根据本发明,RE123材料的高织构显微组织由一系列步骤获得,包括:第一步骤,得到具有高熔化温度的已调整的高熔点RE123(RE=Nd、La、Sm、Eu、Gd、Tb、Dy、Ho)片晶和具有低熔化温度的RE123(RE=Y、Er、Tm、Yb、Lu)粉末的混合物。然后在第二步骤,加热到在低熔点RE123熔点以上和银熔点以下之间的一个温度。在第三步骤,在冷却过程中低熔点RE123相在片晶上成核并外延生长。在低P(O2)环境下使用本热处理,用常规的“管内粉末”和“厚膜”技术生产具有高调整RE123材料的RE123/银线材和带材。
带材也可用其他金属基片,例如包含银、钡锆酸盐、镁氧化物和RE2BaCuO5的,用现有技术中已知的惰性过渡层涂覆的镍带材来制备。
实施例
将Y123粉末与Nd123片晶干混,在每相中两相都有低的化学结合氧含量,例如REBa2Cu3O6+Y(Y=0-0.5),并倒入一个银管中。将该管抽真空和密封后,经几次拉制或轧制,最终压成薄带。将该带在P(O2)=10-5-10-2巴下加热至870-970℃,然后以0.1-10k/h冷却至Y123熔点以下。将该带在纯氧中在400-800℃下最终退火。

Claims (4)

1、一种以在金属带、金属丝上的厚膜形式或以管中粉末形式制备稀土-钡-铜酸盐超导体的方法,包括步骤:将具有高熔点的稀土-钡-铜酸盐籽晶和具有较低熔点的稀土-钡-铜酸盐粉末的混合物承载在金属基片上;
将该基片上的承载材料在高熔点稀土-钡-铜酸盐籽晶和金属基片的熔点以下和低熔点粉末的熔点以上温度进行热处理;和
将热处理过的承载材料在该材料熔化温度以下冷却。
2、权利要求1的方法,其中稀土-钡-铜酸盐材料包含Y、La、Nd、Sm、Eu、Gd、Dy、Ho、Er、Tm、Yb、Lu、Pr的氧化物及其混合物。
3、权利要求1的方法,其中金属基片是银。
4、权利要求1的方法,其中金属基片是具有惰性过渡层的镍和/或不锈钢。
CN98115117.5A 1997-03-21 1998-03-20 制备稀土-钡-铜酸盐超导体的方法 Pending CN1202705A (zh)

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US4233297P 1997-03-21 1997-03-21

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US (1) US6243598B1 (zh)
EP (1) EP0866508B1 (zh)
JP (1) JPH1112094A (zh)
CN (1) CN1202705A (zh)
AT (1) ATE242917T1 (zh)
DE (1) DE69815422T2 (zh)
DK (1) DK0866508T3 (zh)

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CN116535248A (zh) * 2023-05-23 2023-08-04 广东天弼陶瓷有限公司 一种具有金属光泽且立体感强的抛釉洞石砖及其制备方法

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DE10128320C1 (de) * 2001-06-12 2002-07-25 Trithor Gmbh Verfahren zum Herstellen von Hochtemperatur-Supraleitern
DE10249550A1 (de) 2002-10-23 2004-05-06 Nexans Superconductors Gmbh Supraleitender Kabelleiter mit SEBCO-beschichteten Leiterelementen
US7286032B2 (en) 2003-07-10 2007-10-23 Superpower, Inc. Rare-earth-Ba-Cu-O superconductors and methods of making same
US20100210468A1 (en) * 2008-08-04 2010-08-19 Haigun Lee Method for joining second-generation high-temperature superconducting wires by melting diffusion

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116535248A (zh) * 2023-05-23 2023-08-04 广东天弼陶瓷有限公司 一种具有金属光泽且立体感强的抛釉洞石砖及其制备方法

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JPH1112094A (ja) 1999-01-19
DE69815422T2 (de) 2003-12-24
EP0866508A1 (en) 1998-09-23
US6243598B1 (en) 2001-06-05
DK0866508T3 (da) 2003-10-06
ATE242917T1 (de) 2003-06-15
DE69815422D1 (de) 2003-07-17
EP0866508B1 (en) 2003-06-11

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