CN1200149C - Silicon seed crystal for straight drawing monocrystal growth and its process - Google Patents
Silicon seed crystal for straight drawing monocrystal growth and its process Download PDFInfo
- Publication number
- CN1200149C CN1200149C CN 02131184 CN02131184A CN1200149C CN 1200149 C CN1200149 C CN 1200149C CN 02131184 CN02131184 CN 02131184 CN 02131184 A CN02131184 A CN 02131184A CN 1200149 C CN1200149 C CN 1200149C
- Authority
- CN
- China
- Prior art keywords
- silicon
- silicon seed
- seed
- crystal
- seed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 187
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 176
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 176
- 239000010703 silicon Substances 0.000 title claims abstract description 176
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 16
- 238000005553 drilling Methods 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000002210 silicon-based material Substances 0.000 abstract description 6
- 238000011161 development Methods 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 3
- 238000003672 processing method Methods 0.000 abstract 1
- 238000004064 recycling Methods 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000003245 working effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention discloses a silicon seed crystal for preparing silicon single crystals by a Czochralski method and a processing method thereof. The silicon seed crystal of the present invention comprises an upper part (1a) of the seed crystal and a lower part (1b) of the silicon seed crystal connected into a whole with each other, wherein the upper part (1a) of the silicon seed crystal is an inverted round platform or an inverted prismatic platform or a cylindrical body, and the lower part (1b) of the silicon seed crystal is a cylindrical body. When the upper part (1a) of the silicon seed crystal is a cylindrical body, the cross section of the cylindrical body of the upper part (1a) of the silicon seed crystal is larger than that of the cylindrical body of the lower part (1b) of the silicon seed crystal, and the silicon seed crystal is prepared by cutting or drilling silicon single crystals on different cutters. When the weight of silicon crystals is as high as 500kg, the silicon seed crystal of the present invention has the advantages of no fracture of the seed crystal, recycling, greatly extended service life of the seed crystal and reduced processing cost of silicon crystals. The present invention can be used for preparing semiconductor grade silicon single crystals for manufacturing integrated circuits and other electronic elements, and the development requirement of semiconductor silicon materials can be satisfied.
Description
Technical field
The present invention relates to a kind of vertical pulling method and prepare used silicon seed of silicon single-crystal and using method thereof.
Background technology
Silicon single crystal generally is used to make unicircuit and other electron component as a kind of semiconductor material.Most semiconductor silicon single crystal body adopts the vertical pulling method manufacturing, and vertical pulling method is made the single crystal growing furnace diagrammatic cross-section of silicon single-crystal and seen accompanying drawing 1.In the method for growing silicon single crystal that vertical pulling method is made; silicon crystal is grown in the growth room; the growth room comprises stainless steel cylinder 8; heat-preservation cylinder 7; graphite heater 6; quartz crucible 11; the quartz crucible supporting apparatus 10 of graphite system etc.; silicon crystal is done shielding gas with the rare gas element argon gas when growth; the following manufacture method of general employing: polysilicon is put in the quartz crucible 11; heat fused; then; to melt silicon and slightly do cooling; give certain condensate depression; the silicon single crystal 1 (being called seed crystal) of a particular crystal orientation is packed in the seedholder 13; the upper end of seedholder 13 is connected with seed shaft 12 by web member; seed crystal 1 is fixed in clamper 13 lower ends, and seed crystal 1 is contacted with silicon melt 3, by the temperature of adjusting melt and the pulling speed that seed crystal makes progress; seed body is grown up; when the diameter of silicon crystal 2 during near aimed dia, improve pulling speed, make the nearly permanent growth in thickness of single crystal.In the last stage of process of growth, silicon melt 3 not completely dissolve as yet in the quartz crucible 11, by increasing the heat supplied in crystalline pulling speed and the quartzy crucible of adjustment, crystal is reduced gradually, thereby form a tail shape cone, when sharp enough hour of cone, crystal will break away from melt, thereby finished the crystalline process of growth.
In the czochralski silicon monocrystal manufacturing processed, need a kind of silicon single crystal that particular crystal orientation is arranged, be commonly referred to seed crystal.It is by the cutting of the silicon single-crystal in certain crystal orientation or drills through and form.Crystal orientation commonly used is＜100 〉,＜111,＜110,＜511 etc.Seed crystal is generally right cylinder or rectangular parallelepiped, and one or more breach are arranged above it, with pin or wire seed crystal is fixed in the workpiece that is called seedholder.Present domestic seed crystal generally adopts rectangular parallelepiped, one side has a plurality of breach in the upper end of rectangular parallelepiped, the shape of seedholder 13 lower ends matches with rectangular parallelepiped seed crystal 1, seed crystal 1 half is embedded in the lower end of clamper 13, with metal molybdenum filament 15 the two is fixed together, molybdenum filament 15 just in time enters in the breach of seed crystal 1, plays the fixedly effect of seed crystal.Domestic seed crystal and seedholder synoptic diagram are seen accompanying drawing 2.This kind crystalline method of design is fit to make the silicon crystal of minor diameter, generally can only make diameter less than 160 millimeters, and weight is no more than the silicon crystal of 60Kg.When seed crystal is used to make crystal greater than this scope, just, reduce access times easily in the gap portions fracture of seed crystal, increase cost.Because metal molybdenum is different with the coefficient of expansion of silicon, after repeatedly using, cause molybdenum filament loosening easily simultaneously, make seed crystal fall into melt, cause the preparation process failure.
The external right cylinder that is shaped as that also has a kind of seed crystal that adopts, a cylindrical side is fluted, the right cylinder that is shaped as hollow of seedholder 13 lower ends, hole with metal molybdenum pin 14 identical sizes is wherein also arranged, can pack into the lower end of clamper 13 of right cylinder seed crystal 1, the groove of seed crystal 1 is relative with the clamper lateral orifices, and metal molybdenum pin 14 inserts in the hole, and plays the fixedly effect of seed crystal.External seed crystal and seedholder synoptic diagram are seen accompanying drawing 3.This kind crystalline method of design also only is fit to make the silicon crystal of minor diameter, generally can make diameter less than 160 millimeters, and weight is no more than the silicon crystal of 60Kg.When making large diameter crystal, or after repeatedly using, seed crystal also easily in the fracture of porose place, makes seed crystal fall into melt, equally also can cause the preparation process failure.
The development of semiconductor silicon material is very fast now, and crystal develops to the direction of major diameter, high weight gradually, and diameter has been increased to 450 millimeters, and weight also surpasses 250Kg.In this case, present existing seed crystal and clamping device thereof can not meet the demands, and also dangerous, seed crystal ruptures easily, in order to reduce this situation, generally adopt every seed crystal only to use 1～5 crystal growth, have so just increased manufacturing cost.In order to satisfy and promote the development of silicon materials, need design a kind of be suitable for preparing major diameter crystal and the nonexpondable seed crystal of energy.
American documentation literature 6,139,632 (day for announcing 2000.10.31) have reported a kind of seed crystal that pulling monocrystal is used that is used for, it is grouped into by major diameter part, middle diameter parts, a minor diameter, connect small diameter portion and major diameter part by middle diameter parts, their cross section is circle, and seedholder Ying Yuqi adapts.In the pulling process of monocrystalline, produce wearing and tearing, make to produce the gap between seed crystal and the clamper and reduce its work-ing life.
Summary of the invention
The object of the present invention is to provide a kind of vertical pulling method to prepare the used silicon seed of silicon single-crystal, this invention has overcome above-mentioned shortcoming, can be used to prepare the silicon crystal of major diameter, high weight, and can use repeatedly, has improved the work-ing life of silicon seed greatly.
Another object of the present invention is to provide a kind of vertical pulling method to prepare the working method of the used silicon seed of silicon single-crystal.
In order to realize the object of the invention, silicon seed of the present invention comprises silicon seed top 1a and the silicon seed bottom 1b that is connected as a single entity, wherein said silicon seed top 1a is wherein a kind of of chamfered edge platform or prism, described silicon seed bottom 1b is a cylinder, when described silicon seed top 1a was prism, the cross section of described silicon seed top 1a prism was greater than the cross section of described silicon seed bottom 1b cylinder.Described cylinder is right cylinder or prism.
The limit number of described prism or chamfered edge platform with 3～16 for well, preferred limit number is 4～10.
The side of described silicon seed top 1a chamfered edge platform is 10 °～＜90 ° with the angle theta of axle, and preferred angle theta is 10 °～60 °.
In order to improve the intensity of seed crystal, on the 1a of the top of seed crystal, also have a cylinder 1c, described cylinder 1c is right cylinder or prism.The limit number of described prism is 3～16, and preferred limit number is 4～10.This moment, silicon seed was made up of three different cylinders of cross section that are connected as a single entity.
In order to realize another goal of the invention, silicon seed of the present invention cuts or drills through by a silicon single-crystal to certain crystal orientation and forms.Just, seed crystal is carried out mechanical workout according to certain orientation and angle on specific equipment according to the shape of required seed crystal.Choose the silicon single-crystal in certain crystal orientation earlier, silicon single-crystal can be right cylinder or rectangular parallelepiped, and general crystal orientation commonly used is＜100 〉,＜111,＜110,＜511 etc.Select different cutting machines according to the shape of cutting seed crystal then, general polyhedron is processed on inside diameter slicer or wire cutting machine, and right cylinder is then processed on drilling machine, and cutting tool is made with the stainless steel of the thick gold-plated hard rock grain of 0.2mm～2mm.In grinding machine or line cutting, process desired rounding platform or chamfered edge platform.To use the X-ray direction finder in the course of processing, the crystalline crystal orientation is measured, to guarantee that crystalline crystal orientation deviation was less than 15 minutes.
The working method of silicon seed of the present invention comprises the steps:
1. get a silicon single-crystal, described silicon single-crystal can be right cylinder or rectangular parallelepiped;
2. on inner circle cutting machine or drilling machine, silicon seed is processed into cylinder or prism;
3. with grinding machine or wire cutting machine cylinder or prismatical silicon single-crystal are processed the top 1a of required silicon seed then;
4. on inner circle cutting machine or drilling machine, process the bottom 1b of required silicon seed again, finally process required seed crystal.
Working method of the present invention can be processed the bottom of required seed crystal earlier to processing sequence without limits, reprocesses out the top of seed crystal.
The top 1a of silicon seed of the present invention goes up when also having a cylinder 1c, and its working method is:
1. get a silicon single-crystal, described silicon single-crystal can be right cylinder or rectangular parallelepiped;
2. on inner circle cutting machine or drilling machine, silicon seed is processed into cylinder or prism;
3. then on cylinder or position, prismatical middle and upper part, process the top 1a and the cylinder 1c of required silicon seed with grinding machine or wire cutting machine;
4. on inner circle cutting machine or drilling machine, process the bottom 1b of required silicon seed again, finally process required seed crystal.
Vice versa processes the shape of required seed crystal.
Described silicon seed is used for the growth of crystal for straight drawing monocrystal; silicon single-crystal is grown in the growth room; when growth, do shielding gas, earlier quartz crucible 11 is put into the quartz crucible supporting apparatus 10 of graphite system, polysilicon is put into quartz crucible 11 with the rare gas element argon gas; described silicon seed 1 seedholder 13 lower ends of packing into; the furnace chamber that closes, and vacuumize, heating makes the silicon fusing then; after silicon melts fully, progressively reduce the temperature of molten silicon near the fusing point of silicon.Quartz crucible 11 is being rotated under the drive of seed shaft 12 with seedholder 13 under the drive of graphite axis 9, silicon seed 1 is slowly descended, and contact with molten silicon, upwards promote seed crystal with certain speed then, the purpose of this process mainly is to eliminate the dislocation defects that forms because of thermal shocking in the seed crystal.When treating that seed crystal rises to certain-length, pulling speed is slowed down, slightly reduce the temperature of melt simultaneously, make the seed crystal enlarged diameter, when the seed crystal diameter increases to than low approximately 10 millimeter of aimed dia, increase pulling speed, make crystal be close to the equal diameter growth.Store the silicon material not for a long time in quartz crucible 11, improve pulling speed again, suitably increase the power of heating simultaneously, make crystal diameter be changed to a back taper, when boring point enough hour, it can break away from silicon melt, and at this moment the crystalline process of growth finishes.When being cooled to be close to room temperature, crystal can be taken off in crystal.
Wherein fixedly the material of seedholder 13 employings of seed crystal is metal molybdenum or graphite, described seedholder 13 upper ends are a connecting parts 13c who is connected with seed shaft 12, it is characterized in that described seedholder 13 lower ends comprise seedholder top 13a and seedholder bottom 13b, for detachably to connect, described seedholder bottom 13b includes the cavity of a up big and down small and up/down perforation between described seedholder top 13a and the described seedholder bottom 13b.
Can be thread connection between described clamper 13 and the seed shaft 12 or pin connects, can be thread connection or sell between described clamper top 13a and the described clamper bottom 13b and connect.
The cavity of described seedholder bottom 13b includes the shape hole of falling from power at least, or is two the stair-stepping post of one-tenth holes, and the described shape hole of falling from power is rounding platform hole or chamfered edge platform hole, and described post hole is cylindrical hole or prismatic hole.
The cavity of described seedholder bottom 13b also has a post hole below the shape hole of falling from power except that the shape hole of falling from power is arranged, or a post hole is arranged above the shape hole of falling from power, or at the shape hole upper and lower of falling from power one post hole is arranged respectively.
The limit number in described prismatic hole or chamfered edge platform hole is 3～16, and preferred limit number is 4～10.
The side in described chamfered edge platform hole or rounding platform hole and the angle theta between the vertical line are 10 °～＜90 °, and preferred θ is 10 °～60 °.
The cavity of described seedholder bottom 13b respectively is in a rounding platform hole and a cylindrical hole, a chamfered edge platform hole and a prismatic hole, a cylindrical hole and a rounding platform hole and a cylindrical hole, a prismatic hole and a chamfered edge platform hole and a prismatic hole, a rounding platform hole, a chamfered edge platform hole, two stepped cylindrical holes or two the stepped prismatic holes wherein any one.
The cavity shape of described clamper bottom 13b is in order to satisfy the requirement of silicon seed shape, seed crystal can inlay card in the clamper bottom, to bear the weight of the silicon single-crystal of constantly growing up.
The present invention to described clamper top 13a and described clamper bottom 13b shape without limits.Can be wherein any one of the molectron of right cylinder, prism, round platform and cylinder or terrace with edge and prismatical molectron etc.
Between clamper of the present invention top 13a and the described clamper bottom 13b for detachably to connect, therefore when described silicon seed 1 is used at crystal for straight drawing monocrystal growth, earlier described clamper top 13a and described clamper bottom 13b are disassembled, described clamper bottom 13b then packs described silicon seed 1 into from above, again described clamper top 13a is connected with described clamper bottom 13b, silicon seed 1 just is fixed in the described clamper 13 like this, can be used for the growth of the silicon single-crystal of large volume, high weight.
The present invention has designed the seed crystal of special shape, can satisfy the development need of semiconductor silicon material, can be used for making the preparation of the semiconductor grade silicon single-crystal of unicircuit and other electron component.Adopt seed crystal of the present invention can prolong the work-ing life of seed crystal greatly, can reach more than 40 times, reduce the tooling cost of silicon crystal, the silicon crystal weight of production is during up to 500Kg, and seed crystal itself can not rupture yet.
Description of drawings
Figure 1 shows that the single crystal growing furnace diagrammatic cross-section of vertical pulling method manufacturing silicon single-crystal
Figure 2 shows that existing domestic seed crystal and seedholder synoptic diagram
Figure 3 shows that existing external seed crystal and seedholder synoptic diagram
Figure 4 shows that seed crystal stereographic map of the present invention
Figure 5 shows that the sectional view of Fig. 4
Figure 6 shows that seed crystal of the present invention and seedholder synoptic diagram
Figure 7 shows that the another kind of seed crystal stereographic map of the present invention
Figure 8 shows that the sectional view of Fig. 7
Figure 9 shows that the another kind of seed crystal stereographic map of the present invention
Figure 10 shows that the another kind of seed crystal stereographic map of the present invention
Among the figure, 1 is silicon seed, the 2nd, and silicon single crystal bar, the 3rd, silicon melt, the 4th, loam cake, the 5th, carbon lagging material, the 6th, graphite heater, the 7th, heat-preservation cylinder, the 8th, stainless steel cylinder, the 9th, graphite axis, the 10th, the quartz crucible supporting apparatus of graphite system, the 11st, quartz crucible, the 12nd, seed shaft, the 13rd, clamper, 13a are clamper top, 13b is the clamper bottom, 13c is the clamper connecting parts, the 14th, and molybdenum pin, the 15th, molybdenum filament, 1a is silicon seed top, and 1b is the silicon seed bottom, and 1c is the cylinder that add on silicon seed top.
Embodiment
Below be embodiments of the invention, the embodiment that the present invention provides is in order to further specify the specific embodiments of the invention scheme, rather than is used for limiting protection scope of the present invention.
Embodiment 1
Fig. 4 is the stereographic map of a kind of silicon seed of the present invention.Silicon seed of the present invention is divided into silicon seed top 1a and silicon seed bottom 1b, and two parts are connected as a single entity.Seed crystal top 1a is the rounding platform, and seed crystal bottom 1b is a right cylinder, and the lower surface of seed crystal top 1a is the upper surface of seed crystal bottom 1b.
Fig. 5 is the sectional view of a kind of seed crystal of the present invention.The side of seed crystal top 1a rounding platform is 15 ° with the angle theta of axle.
Silicon seed of the present invention is to cut or drill through by the silicon single-crystal to certain crystal orientation to form.
Concrete working method is:
1. select the cylindrical silicon single crystal in certain crystal orientation for use, diameter is 130 millimeters.
2. be processed into the right cylinder of strip on drilling machine, every long is 150 millimeters.All be coated with bortz on the stainless steel knife mouth.Drilling machine is produced by Beijing machine tool plant.
3. begin to process with grinding machine the inclined-plane at desired 15 ° of angles on the strip right cylinder from end face, grinding machine originates from Beijing machine tool plant.
4. on drilling machine, its inclined-plane is processed into right cylinder with the lower section more at last.
So just process and have the vary in size silicon seed in cross section of two differences.Seed crystal top 1a is the rounding platform, and seed crystal bottom 1b is a right cylinder.
Figure 6 shows that seed crystal of the present invention and seedholder synoptic diagram.Seedholder comprises a connecting parts 13c who is connected with seed shaft, is connected as a single entity with connecting parts among the figure clamper top 13a, clamper bottom 13b.Between clamper top 13a and the clamper bottom 13b is thread connection, and the shape of silicon seed 1 is complementary among the shape of clamper bottom 13b cavity and Fig. 4.When being used at crystal for straight drawing monocrystal growth, earlier clamper top 13a and clamper bottom 13b are disassembled, the clamper bottom 13b that then silicon seed 1 packed into from above, again with clamper top 13a and clamper bottom 13b by thread connection, silicon seed 1 just is fixed in the clamper like this.Seed crystal of the present invention and seedholder can be used for the growth of the silicon single-crystal of large volume, high weight.
Embodiment 2
Fig. 7 is the stereographic map of another kind of seed crystal of the present invention.Seed crystal of the present invention is divided into silicon seed top 1a and silicon seed bottom 1b, and two parts are connected as a single entity.Seed crystal top 1a is for falling six terrace with edges, and seed crystal bottom 1b is six prisms, and the lower surface of seed crystal top 1a is the upper surface of seed crystal bottom 1b.
Fig. 8 is the sectional view of another kind of seed crystal of the present invention.It is 38 ° that seed crystal top 1a falls the angle theta of lateral edges and axle of six terrace with edges.
Silicon seed of the present invention is to cut or drill through by the silicon single-crystal to certain crystal orientation to form.The step that concrete working method comprises is:
1. select the cylindrical silicon single crystal in certain crystal orientation for use, diameter is 156 millimeters.
2. on inside diameter slicer, be processed into length and be six prisms of 200 millimeters.All be coated with bortz on the stainless steel knife mouth.Inside diameter slicer adopts U.S. STC Corporation to produce.
3. begin to process desired 38 ° inclined-plane with wire cutting machine from end face at six prisms of strip, wire cutting machine originates from Switzerland HCT company.
4. on inside diameter slicer, its inclined-plane is processed into six prisms with the lower section more at last.
So just process and have the vary in size silicon seed in cross section of two differences.Seed crystal top 1a is for falling six terrace with edges, and seed crystal bottom 1b is six prisms.
Embodiment 3
Fig. 9 is the stereographic map of another kind of seed crystal of the present invention.Seed crystal of the present invention is divided into silicon seed top 1a and silicon seed bottom 1b, and two parts are connected as a single entity.Seed crystal top 1a and seed crystal bottom 1b are equal round platform, and the cross section of seed crystal top 1a is greater than the cross section of seed crystal bottom 1b.
Silicon seed of the present invention is to cut or drill through by the silicon single-crystal to certain crystal orientation to form.The step that concrete working method comprises is:
1. select the cylindrical silicon single crystal in certain crystal orientation for use, diameter is 130 millimeters.
2. be processed into the right cylinder of strip on drilling machine, every long is 150 millimeters.All be coated with bortz on the stainless steel knife mouth.Drilling machine is produced by Beijing machine tool plant.
3. process the shape of the silicon seed top 1a that wants in the cylindrical place that begins 30 millimeters from end face of strip with grinding machine, grinding machine originates from Beijing machine tool plant.
4. on drilling machine, process at last the shape of silicon seed bottom 1b again.
So just process and have the vary in size silicon seed in cross section of two differences.The seed crystal upper and lower is the different right cylinder of cross section.
Embodiment 4
The bottom 1b of silicon seed is identical with embodiment 1, and the side of the top 1a rounding platform of different is silicon seed is 60 ° with the angle theta of axle.
Embodiment 5
Figure 10 is the stereographic map of another kind of seed crystal of the present invention.Silicon seed not only comprises silicon seed top 1a and silicon seed bottom 1b as different from Example 1, also has a 1c who links to each other with the top 1a of silicon seed, and 1c is a right cylinder.
Its working method begins 30 millimeters place as different from Example 1 from end face on the strip right cylinder, process the inclined-plane at desired 15 ° of angles with grinding machine.
Embodiment 6
No with embodiment 5 is that the angle theta of side and axle of the top 1a rounding platform of silicon seed is 50 °.
Embodiment 7
The bottom 1b of silicon seed is identical with embodiment 2, and the lateral edges of six terrace with edges of top 1a of different is silicon seed is 75 ° with the angle theta of axle.
Embodiment 8
Silicon seed also has a 1c who links to each other with the top 1a of silicon seed as different from Example 2, and 1c is a hexagonal prism.
Its working method begins 50 millimeters place as different from Example 2 from end face on the strip hexagonal prism, process the inclined-plane at desired 38 ° of angles with wire cutting machine.
Embodiment 9
As different from Example 2, the limit number of the upper and lower two-part cylinder of silicon seed is 12.
Embodiment 10
As different from Example 2, the limit number of the upper and lower two-part cylinder of silicon seed is 8.
The silicon seed that the present invention designs can be in silicon crystal weight during up to 500Kg, and seed crystal itself can not rupture.And can use repeatedly, prolong the work-ing life of seed crystal greatly, reduce the tooling cost of silicon crystal.Can be used to make the preparation of the semiconductor grade silicon single-crystal of unicircuit and other electron component, satisfy the development need of semiconductor silicon material.
Claims (10)
1. a vertical pulling method prepares the used silicon seed of silicon single-crystal, it is characterized in that described silicon seed comprises silicon seed top (1a) and silicon seed bottom (1b) that is connected as a single entity, wherein said silicon seed top (1a) is wherein a kind of of chamfered edge platform or prism, and described silicon seed bottom (1b) is a cylinder; When described silicon seed top (1a) was prism, the cross section of described silicon seed top (1a) prism was greater than the cross section of described silicon seed bottom (1b) cylinder, and described cylinder is right cylinder or prism.
2. silicon seed according to claim 1, the limit number that it is characterized in that described prism or chamfered edge platform is 3～16.
3. silicon seed according to claim 2, the limit number that it is characterized in that described prism or chamfered edge platform is 4～10.
4. silicon seed according to claim 1 is characterized in that the side of described silicon seed top (1a) chamfered edge platform and the angle theta of axle are 10 °～＜90 °.
5. silicon seed according to claim 4 is characterized in that the side of described silicon seed top (1a) chamfered edge platform and the angle theta of axle are 10 °～60 °.
6. silicon seed according to claim 1 is characterized in that a cylinder (1c) is in addition gone up on the top (1a) at seed crystal.
7. silicon seed according to claim 6 is characterized in that described cylinder (1c) is right cylinder or prism.
8. silicon seed according to claim 7, the limit number that it is characterized in that described prism is 3～16.
9. silicon seed according to claim 8 is characterized in that the preferred limit of described prism number is 4～10.
10. the silicon seed of use claim 1 carries out the growth method of crystal for straight drawing monocrystal, polysilicon is put into quartz crucible, silicon seed (1) seedholder (13) lower end of packing into, furnace chamber closes, vacuumize, heating is melted silicon fully, after melting fully to silicon, progressively reduce the temperature of silicon, quartz crucible (11) is being rotated under the drive of seed shaft (12) with seedholder (13) under the drive of graphite axis (9), silicon seed (1) is slowly descended, and contact, carry out the silicon single-crystal pulling growth with molten silicon, it is characterized in that, used silicon seed is to comprise silicon seed top (1a) and silicon seed bottom (1b) that is connected as a single entity, and wherein said silicon seed top (1a) is a kind of in chamfered edge platform or the prism, and described silicon seed bottom (1b) is a cylinder; When described silicon seed top (1a) was prism, the cross section of described silicon seed top (1a) prism was greater than the cross section of described silicon seed bottom (1b) cylinder, and described cylinder is right cylinder or prism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02131184 CN1200149C (en) | 2002-10-15 | 2002-10-15 | Silicon seed crystal for straight drawing monocrystal growth and its process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02131184 CN1200149C (en) | 2002-10-15 | 2002-10-15 | Silicon seed crystal for straight drawing monocrystal growth and its process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1490437A CN1490437A (en) | 2004-04-21 |
| CN1200149C true CN1200149C (en) | 2005-05-04 |
Family
ID=34144825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02131184 Expired - Lifetime CN1200149C (en) | 2002-10-15 | 2002-10-15 | Silicon seed crystal for straight drawing monocrystal growth and its process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1200149C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101781792A (en) * | 2009-12-23 | 2010-07-21 | 常州亿晶光电科技有限公司 | Crystal clamp part for broaching silicon rod |
| CN101736397A (en) * | 2009-12-23 | 2010-06-16 | 常州亿晶光电科技有限公司 | Matted crystal for pulling silicon rod |
| CN102808213A (en) * | 2012-08-21 | 2012-12-05 | 安阳市凤凰光伏科技有限公司 | Preparation method for large-area crystal seeds of similar single crystals produced by casting method |
| CN102873770B (en) * | 2012-09-24 | 2014-11-19 | 孙新利 | Method for processing orientation-deflected seed crystals |
| CN104129000B (en) * | 2014-07-28 | 2016-02-10 | 江苏吉星新材料有限公司 | A kind of processing method of heat-exchanging method sapphire seed crystal |
| CN105648520A (en) * | 2016-03-18 | 2016-06-08 | 江苏中电振华晶体技术有限公司 | Seed crystal capable of reinforcing seeding temperature signals and seeding method thereof |
-
2002
- 2002-10-15 CN CN 02131184 patent/CN1200149C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1490437A (en) | 2004-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN87108014A (en) | The growth method of shaped single crystals | |
| CN101555620A (en) | Crystal growing device and method | |
| KR20070048180A (en) | Process for producing a crystalline silicon ingot | |
| CN1200149C (en) | Silicon seed crystal for straight drawing monocrystal growth and its process | |
| CN110978303A (en) | Cutting method for improving utilization rate of silicon single crystal rod | |
| CN104246022A (en) | Production of mono-crystalline silicon | |
| CN105316758A (en) | Seed crystal laying method and single crystal growth method through ingotting | |
| CN104736746A (en) | Improved production of mono-crystalline silicon | |
| CN103114335A (en) | Method for producing cadmium telluride or cadmium zinc telluride single crystal | |
| CN1200148C (en) | Silicon seed crystal holder for monocrystal silicon by vertical pulling process | |
| CN2578342Y (en) | Seed crystal holder for monocrystal silicon growth by straight pull process | |
| CN100412239C (en) | Technique for growing Cd-Zn-Te crystal | |
| CN101724892A (en) | Seed crystal clamping device | |
| JP5272247B2 (en) | Method for melting polycrystalline silicon raw material in CZ method | |
| CN201268729Y (en) | Seed crystal clamping device | |
| CN201627000U (en) | Silicon seed crystal for monocrystal silicon growth by straight pull process | |
| CN201634795U (en) | Czochralski crystal furnace graphite crucible | |
| JP6112763B2 (en) | Rod-shaped polycrystalline raw material supply jig and rod-shaped polycrystalline raw material supply method | |
| JP3602472B2 (en) | Semiconductor material loading and holding system for polycrystalline silicon rods. | |
| CN104264221A (en) | Square silicon core material for producing primary polysilicon and preparation method thereof | |
| CN1200147C (en) | Method of speeding smelting of polycrystalline material and bottom heater for pulling monocrystal | |
| JP4459519B2 (en) | Compound raw material and method for producing compound single crystal | |
| JPWO2005113436A1 (en) | Cooled lump of molten silicon and method for producing the same | |
| JP2005053772A (en) | Rare earth silicate single crystal and method for manufacturing the same | |
| CN205443512U (en) | Efficient single crystal growing furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20120203 Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS Effective date: 20120203 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100088 HAIDIAN, BEIJING TO: 100088 XICHENG, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120203 Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088, 2, Xinjie street, Beijing Co-patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Patentee before: General Research Institute for Nonferrous Metals |
|
| C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150729 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150729 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM ADVANCED MATERIALS CO.,LTD. |
|
| CI01 | Publication of corrected invention patent application |
Correction item: Patentee|Address Correct: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd.|101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road False: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd.|101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Number: 33 Volume: 31 |
|
| ERR | Gazette correction | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20050504 |