CN118312009A - Positive temperature coefficient reference current source circuit - Google Patents
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Abstract
The invention discloses a positive temperature coefficient reference current source circuit which comprises a current source generating circuit and a current mirror output circuit, wherein the output end of the current source generating circuit is connected with the input end of the current mirror output circuit. The positive temperature coefficient reference current source circuit consists of a current source generating circuit and a current mirror output circuit, the circuit structure can be integrated in a process containing NPN BJT, the generating circuit obtains positive temperature coefficient current and outputs the positive temperature coefficient current to other circuit modules through a transistor size-adjustable current mirror, the circuit structure is simple, the positive temperature coefficient is stable, the reference current is very flexible to adjust, and the complexity of the whole circuit is greatly reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuits, in particular to a positive temperature coefficient reference current source circuit.
Background
The reference current source is a high-precision current source used as a current reference for other circuits in an analog integrated circuit. The bias current source is an essential basic circuit unit in the analog integrated circuit and is widely applied to operational amplifiers, A/D converters, D/A converters and other analog radio frequency integrated circuits, and the design of the bias current source is based on the duplication of an existing standard reference current source and then is output to other modules of the system, so that the high-performance analog circuit is required to be supported by a high-quality and high-stability reference current source, and the stability of the overall performance is ensured.
In integrated circuit designs, the transconductance of a transistor is generally proportional to the operating current flowing through the transistor, with the larger the operating current, the larger the transconductance of the transistor. However, the transconductance of the transistor will deteriorate with increasing operating temperature, and the transconductance will increase with decreasing temperature, so that in order to ensure a constant transconductance of the transistor in the amplifier over the entire operating temperature range, a reference current source with positive temperature coefficient is often used as the current bias of the overall circuit. When the working temperature is increased, the reference current is increased, so that the transconductance of the transistor can be improved, and the transconductance deterioration caused by the temperature increase is further improved.
The temperature coefficient of the current reference in the analog radio frequency integrated circuit generally needs to be relatively large, such as an operational amplifier and a power amplifier, in order to ensure that the transconductance in the whole working temperature range is constant, the current power consumption difference value of the lowest temperature and the highest temperature can be doubled even, and only the positive temperature characteristic of the current reference is ensured, the performance of the circuit can not be changed too much in the whole working temperature range, and the application requirement is met. Meanwhile, in the current source circuit with positive temperature coefficient, the current source circuit is commonly used in circuits sensitive to temperature, such as some detection circuits and protection circuits.
The data show that for a positive temperature coefficient current source circuit with a smaller temperature coefficient, a band gap reference circuit is generally adopted in the prior art to generate PTAT current, and then the reference current meeting the requirement is obtained through a technical method of multiplying the current by a current mirror. The positive temperature coefficient of PTAT current is related to the thermal voltage V T of the triode, and the temperature coefficient of the thermal voltage isThe circuit has a simple and accurate structure, but obviously, the temperature coefficient of the obtained reference current is fixed and smaller, and the application requirement cannot be well met.
For a positive temperature coefficient current source circuit with a larger temperature coefficient, the voltage and the resistance of the positive temperature coefficient can be generally adopted to obtain the voltage with the positive temperature coefficient, so that a complete band-gap reference voltage circuit is needed to obtain the voltage with the positive temperature coefficient, the circuit structure is complex, and the circuit area is larger.
Chinese patent document CN115877906a discloses a "reference source generating circuit and a positive temperature coefficient current generating circuit". The reference source generating circuit includes: the reference source output end is used for outputting a reference voltage which is overlapped by the first voltage and the second voltage and has zero temperature coefficient, wherein a first node and a second node are arranged between the current copying unit and the positive temperature coefficient current generating unit, and the clamping unit is arranged between the second node and the current copying unit and is used for enabling the first node and the second node to have equal voltage. The technical scheme has the advantages of complex circuit structure and large circuit area.
Disclosure of Invention
The invention mainly solves the technical problems of complex circuit structure and large circuit area in the prior technical scheme, and provides a positive temperature coefficient reference current source circuit which consists of a current source generating circuit and a current mirror output circuit.
The technical problems of the invention are mainly solved by the following technical proposal: the invention comprises a current source generating circuit and a current mirror output circuit, wherein the output end of the current source generating circuit is connected with the input end of the current mirror output circuit. For circuits requiring increased current consumption at high temperatures for guaranteed performance, particularly for applications where temperature coefficient requirements are relatively large. The circuit structure can be integrated in a process containing an NPN BJT, and the magnitude of the reference current is mainly determined by a bias voltage V BIAS, a base emitter voltage V BE of an NPN triode Q2, a gate-source voltage V GS2 of an N MOS tube N2 and a polysilicon resistor R 1. The invention also comprises a necessary loop circuit for ensuring the stability of the circuit and a current mirror structure with an adjustable MOS transistor size, so that the reference current can be adjusted. The circuit has the advantages of simple structure, stable positive temperature coefficient, flexible adjustment of the reference current, and greatly reduced complexity of the whole circuit.
Preferably, the current source generating circuit includes a transistor Q1 and a transistor Q2, and further includes a MOS transistor N1 and a MOS transistor N2 connected to emitters of the transistor Q1 and the transistor Q2, respectively. The generating circuit obtains the current with positive temperature coefficient and then outputs the current to other circuit modules through a transistor size adjustable current mirror. The base voltages of the triode Q1 and the triode Q2 are consistent, tail currents of the two triodes respectively pass through an N-type MOS tube N1 and an N-type MOS tube N2 which form a current mirror, and the two MOS tubes are relatively large in size, so that the currents on the two branches are equal. The current source generating circuit has a weak feedback loop including a circuit configuration of a necessary stabilizing loop.
Preferably, the collector of the triode Q1 is connected with the power supply end V BIAS through a resistor R1, the base of the triode Q1 is connected with the base of the triode Q2, the emitter of the triode Q1 is connected with the drain electrode of the MOS tube N1, the grid electrode of the MOS tube N1 is connected with the grid electrode of the MOS tube N2, the source electrode of the MOS tube N1 is grounded, the source electrode of the MOS tube N2 is grounded, the drain electrode of the MOS tube N2 is connected with the emitter of the triode Q2, and the collector of the triode Q2 is connected with the input end of the current mirror output circuit.
Preferably, the transistors Q1 and Q2 are NPN transistors. The transistor is not limited to the type described, but includes HBT, MOS, pHEMT and the like type mixed use conversion and the like.
Preferably, the MOS transistor N1 and the MOS transistor N2 are N-type MOS transistors. The transistor is not limited to the type described, but includes HBT, MOS, pHEMT and the like type mixed use conversion and the like.
Preferably, the current mirror output circuit includes a MOS transistor P1 and a MOS transistor P2, where the MOS transistor P1 and the MOS transistor P2 are P-type MOS transistors. The generating circuit obtains the current with positive temperature coefficient and then outputs the current to other circuit modules through a transistor size adjustable current mirror.
Preferably, the drain electrode of the MOS tube P1 is connected with the output end of the current source generating circuit, the grid electrode of the MOS tube P1 is connected with the grid electrode of the MOS tube P2, the source electrode of the MOS tube P1 is connected with the source electrode of the MOS tube P2, and the grid electrode of the MOS tube P2 outputs the current I REF.
Preferably, the size of the MOS transistor P2 is adjusted according to the application requirement. The current mirror output circuit consists of a P-type MOS tube P1 and a P-type MOS tube P2, and the transistor size ratio of the P-type MOS tube P1 to the P-type MOS tube P2 can be adjusted.
The beneficial effects of the invention are as follows:
1. The temperature coefficient is relatively large, and the higher application requirement is met.
2. The current source circuit has simple structure and high integration level.
3. The reference current is simple and flexible to adjust.
4. The temperature coefficient of the reference current is simply and flexibly adjusted.
Drawings
Fig. 1 is a schematic circuit diagram of the present invention.
Fig. 2 is a temperature profile of a polysilicon resistor and MOS transistor threshold voltage in accordance with the present invention.
Fig. 3 is a graph of the output current temperature of a reference current source circuit of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be further described in detail below by way of examples with reference to the accompanying drawings, and it should be understood that the detailed description herein is merely a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, but all other embodiments obtained by persons of ordinary skill in the art without making any inventive effort are within the scope of the present invention.
Before discussing the exemplary embodiments in more detail, it should be mentioned that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although a flowchart depicts operations (or steps) as a sequential process, many of the operations (or steps) can be performed in parallel, concurrently, or at the same time. Furthermore, the order of the operations may be rearranged. The process may be terminated when its operations are completed, but may have additional steps not included in the figures; the processes may correspond to methods, functions, procedures, subroutines, and the like.
In integrated circuit designs, the transconductance of a transistor is generally proportional to the operating current flowing through the transistor, with the larger the operating current, the larger the transconductance of the transistor. However, the transconductance of the transistor will deteriorate with increasing operating temperature, and the transconductance will increase with decreasing temperature, so that in order to ensure a constant transconductance of the transistor in the amplifier over the entire operating temperature range, a reference current source with positive temperature coefficient is often used as the current bias of the overall circuit. When the working temperature is increased, the reference current is increased, so that the transconductance of the transistor can be improved, and the transconductance deterioration caused by the temperature increase is further improved.
The temperature coefficient of the current reference in the analog radio frequency integrated circuit generally needs to be relatively large, such as an operational amplifier and a power amplifier, in order to ensure that the transconductance in the whole working temperature range is constant, the current power consumption difference value of the lowest temperature and the highest temperature can be doubled even, and only the positive temperature characteristic of the current reference is ensured, the performance of the circuit can not be changed too much in the whole working temperature range, and the application requirement is met. Meanwhile, in the current source circuit with positive temperature coefficient, the current source circuit is commonly used in circuits sensitive to temperature, such as some detection circuits and protection circuits.
For a positive temperature coefficient current source circuit with a smaller temperature coefficient, a band gap reference circuit is generally adopted in the prior art to generate PTAT current, and then the reference current meeting the requirement is obtained through a technical method of multiplying the current by a current mirror. The positive temperature coefficient of PTAT current is related to the thermal voltage V T of the triode, and the temperature coefficient of the thermal voltage isThe circuit has a simple and accurate structure, but obviously, the temperature coefficient of the obtained reference current is fixed and smaller, and the application requirement cannot be well met.
For a positive temperature coefficient current source circuit with a larger temperature coefficient, the voltage and the resistance of the positive temperature coefficient can be generally adopted to obtain the voltage with the positive temperature coefficient, so that a complete band-gap reference voltage circuit is needed to obtain the voltage with the positive temperature coefficient, the circuit structure is complex, and the circuit area is larger.
The technical scheme of the invention is further specifically described below through examples and with reference to the accompanying drawings.
Examples: the positive temperature coefficient reference current source circuit of the embodiment comprises a current source generating circuit and a current mirror output circuit, as shown in fig. 1, wherein the output end of the current source generating circuit is connected with the input end of the current mirror output circuit. For circuits requiring increased current consumption at high temperatures for guaranteed performance, particularly for applications where temperature coefficient requirements are relatively large. The circuit structure can be integrated in a process containing an NPN BJT, and the magnitude of the reference current is mainly determined by a bias voltage V BIAS, a base emitter voltage V BE of an NPN triode Q2, a gate-source voltage V GS2 of an N MOS tube N2 and a polysilicon resistor R 1. The invention also comprises a necessary loop circuit for ensuring the stability of the circuit and a current mirror structure with an adjustable MOS transistor size, so that the reference current can be adjusted. The circuit has the advantages of simple structure, stable positive temperature coefficient, flexible adjustment of the reference current, and greatly reduced complexity of the whole circuit.
The current source generating circuit comprises a triode Q1, a triode Q2, a MOS tube N1 and a MOS tube N2 which are respectively connected with the emitting electrodes of the triode Q1 and the triode Q2. The triode Q1 and the triode Q2 are NPN type triodes. MOS pipe N1 and MOS pipe N2 are N type MOS pipe. The transistor is not limited to the type described, but includes HBT, MOS, pHEMT and the like type mixed use conversion and the like. The collector of the NPN type triode Q1 is connected with the power supply end V BIAS through a resistor R1, the base of the NPN type triode Q1 is connected with the base of the NPN type triode Q2, the emitter of the NPN type triode Q1 is connected with the N1 drain electrode of the N type MOS tube, the N1 grid electrode of the N type MOS tube is connected with the N2 grid electrode of the N type MOS tube, the N1 source electrode of the N type MOS tube is grounded, the N2 drain electrode of the N type MOS tube is connected with the emitter of the NPN type triode Q2, and the collector of the NPN type triode Q2 is connected with the input end of the current mirror output circuit. The generating circuit obtains the current with positive temperature coefficient and then outputs the current to other circuit modules through a transistor size adjustable current mirror. The base voltages of the NPN type triode Q1 and the NPN type triode Q2 are consistent, tail currents of the two triodes respectively pass through an N type MOS tube N1 and an N type MOS tube N2 which form a current mirror, and the sizes of the two MOS tubes are relatively large, so that the currents on the two branches are ensured to be equal. The current source generating circuit has a weak feedback loop including a circuit configuration of a necessary stabilizing loop. In the design of the invention, a negative feedback loop with very low loop gain is arranged, and the whole circuit is possibly unstable due to the introduction of negative feedback, so that a necessary compensation circuit is required to be added to stabilize the whole loop, and the reference current generating circuit is stabilized.
The current mirror output circuit comprises a MOS tube P1 and a MOS tube P2, wherein the MOS tube P1 and the MOS tube P2 are P-type MOS tubes. The drain electrode of the P-type MOS tube P1 is connected with the output end of the current source generating circuit, the grid electrode of the P-type MOS tube P1 is connected with the grid electrode of the P-type MOS tube P2, the source electrode of the P-type MOS tube P1 is connected with the source electrode of the P-type MOS tube P2, and the grid electrode of the P-type MOS tube P2 outputs current I REF. The generating circuit obtains the current with positive temperature coefficient and then outputs the current to other circuit modules through a transistor size adjustable current mirror. The transistor is not limited to the type described, but includes HBT, MOS, pHEMT and the like type mixed use conversion and the like.
The size of the P-type MOS tube P2 is adjusted according to application requirements. The current mirror output circuit consists of a P-type MOS tube P1 and a P-type MOS tube P2, and the transistor size ratio of the P-type MOS tube P1 to the P-type MOS tube P2 can be adjusted.
The invention has the advantages that:
1. The temperature coefficient is relatively large, and the higher application requirement is met.
2. The current source circuit has simple structure and high integration level.
3. The reference current is simple and flexible to adjust.
4. The temperature coefficient of the reference current is simply and flexibly adjusted.
Examples:
The invention aims to overcome the defects in the prior art, provides a new circuit structure for obtaining a reference current source circuit with positive temperature coefficient, and can well meet application requirements, in particular to circuits such as an operational amplifier, a power amplifier and the like which are sensitive to reference current.
The positive temperature coefficient reference current source circuit consists of a current source generating circuit and a current mirror output circuit. The generating circuit obtains the current with positive temperature coefficient and then outputs the current to other circuit modules through a transistor size adjustable current mirror. For circuits requiring increased current consumption at high temperatures for guaranteed performance, particularly for applications where temperature coefficient requirements are relatively large. The circuit structure can be integrated in a process containing an NPN BJT, and the magnitude of the reference current is mainly determined by a bias voltage V BIAS, a base emitter voltage V BE of an NPN triode Q2, a gate-source voltage V GS2 of an N MOS tube N2 and a polysilicon resistor R 1. The invention also comprises a necessary loop circuit for ensuring the stability of the circuit and a current mirror structure with an adjustable MOS transistor size, so that the reference current can be adjusted. The circuit has the advantages of simple structure, stable positive temperature coefficient, flexible adjustment of the reference current, and greatly reduced complexity of the whole circuit.
The positive temperature coefficient reference current source circuit is composed of a resistor R1, an NPN type transistor Q2, an N type MOS tube N1 and an N type MOS tube N2. The collector of the NPN type triode Q1 is connected with the power supply end V BIAS through a resistor R1, the base of the NPN type triode Q1 is connected with the base of the NPN type triode Q2, the emitter of the NPN type triode Q1 is connected with the N1 drain electrode of the N type MOS tube, the N1 grid electrode of the N type MOS tube is connected with the N2 grid electrode of the N type MOS tube, the N1 source electrode of the N type MOS tube is grounded, the N2 drain electrode of the N type MOS tube is connected with the emitter of the NPN type triode Q2, and the collector of the NPN type triode Q2 is connected with the input end of the current mirror output circuit. The generating circuit obtains the current with positive temperature coefficient and then outputs the current to other circuit modules through a transistor size adjustable current mirror. The base voltages of the NPN type triode Q1 and the NPN type triode Q2 are consistent, tail currents of the two triodes respectively pass through an N type MOS tube N1 and an N type MOS tube N2 which form a current mirror, and the sizes of the two MOS tubes are relatively large, so that the currents on the two branches are ensured to be equal.
The positive temperature coefficient reference current source circuit is characterized in that the current mirror output circuit consists of a P-type MOS tube P1 and a P-type MOS tube P2, and the P1 is as follows: the transistor size ratio of P2 is adjustable. The drain electrode of the P-type MOS tube P1 is connected with the output end of the current source generating circuit, the grid electrode of the P-type MOS tube P1 is connected with the grid electrode of the P-type MOS tube P2, the source electrode of the P-type MOS tube P1 is connected with the source electrode of the P-type MOS tube P2, and the grid electrode of the P-type MOS tube P2 outputs current I REF. The generating circuit obtains the current with positive temperature coefficient and then outputs the current to other circuit modules through a transistor size adjustable current mirror. The size of the P-type MOS tube P2 is adjusted according to application requirements. The current mirror output circuit consists of a P-type MOS tube P1 and a P-type MOS tube P2, and the transistor size ratio of the P-type MOS tube P1 to the P-type MOS tube P2 can be adjusted.
According to the positive temperature coefficient reference current source circuit, the power supply end V BIAS can use an off-chip or on-chip voltage source according to the application requirement of the module circuit.
The positive temperature coefficient reference current source circuit comprises a weak feedback loop and a circuit structure comprising necessary stable loops. In the design of the invention, a negative feedback loop with very low loop gain is arranged, and the whole circuit is possibly unstable due to the introduction of negative feedback, so that a necessary compensation circuit is required to be added to stabilize the whole loop, and the reference current generating circuit is stabilized.
The positive temperature coefficient reference current source circuit is characterized in that: the transistor is not limited to the type shown in fig. 1, but also includes HBT, MOS, pHEMT and the like which are mixed and used as a conversion and the like.
The positive temperature coefficient reference current source circuit designed by the invention has simple circuit structure and larger temperature coefficient. As shown in figure 1, the core circuit diagram of the positive temperature coefficient reference current source circuit designed by the invention mainly comprises a current source generating circuit and a current mirror current output circuit.
The positive temperature coefficient current source generating circuit consists of a resistor R1, an NPN triode Q2, an N MOS tube N1 and an N MOS tube N2. The base voltages of the triode Q1 and the triode Q2 are consistent, tail currents of the two triodes respectively pass through an N-type MOS tube N1 and an N-type MOS tube N2 which form a current mirror, and the two MOS tubes are relatively large in size, so that the currents on the two branches are equal.
The current on the two branches is obtained as follows:
Wherein V BE2 is the base-emitter voltage of transistor Q2, and V GS2 is the gate-source voltage of MOS transistor N2.
Assuming that the temperature coefficient of V BIAS is zero, the resulting current temperature coefficient related terms are the temperature coefficients of V BE2、VGS2 and polysilicon resistor R1.
The base-emitter voltage of transistor Q2 is:
the temperature coefficient of the voltage is related to the temperature and the voltage value, and at room temperature, the temperature coefficient corresponding to the voltage is:
Obviously, the base-emitter voltage of transistor Q2 is a negative temperature coefficient and is much greater than the temperature coefficient of thermal voltage V T.
The gate-source voltage of the MOS transistor N2 is:
wherein μ n is electron mobility, which is related to temperature:
Where α is a process parameter, approximately equal to 1.5, μ T0 represents the electron mobility magnitude at the reference temperature. Thus, the temperature coefficient of electron mobility can be obtained according to formula (5) as:
Thus, electron mobility μ n of the NMOS transistor can be obtained as a negative temperature coefficient.
The threshold voltage V TH of the transistor can be expressed as:
VTH＝VTH0-κ(T-T0) (7)
Where V TH0 denotes the magnitude of the threshold voltage of the transistor at the reference temperature, and κ is the temperature coefficient, so it is known from equation (7) that the threshold voltage of the transistor is negative temperature coefficient.
The temperature characteristic expression of the polysilicon resistor R 1 is:
R1＝RT0-βRT0(T-T0) (8)
where R T0 is the resistance at the reference temperature and β is the temperature coefficient, it is known that the polysilicon high resistance is negative, but the temperature coefficient of polysilicon resistance is typically very small and can be almost ignored in many integrated circuit designs.
As shown in fig. 2, which is a simulation graph of the polysilicon resistance and the threshold voltage of the NMOS at different temperatures, it can be seen from the results in the graph that the threshold voltages of the polysilicon resistance and the NMOS are both negative temperature coefficients, which are consistent with the theories of the formulas (7) and (8).
In summary, the temperature coefficient of the generated reference current can be simplified as:
The reference current temperature coefficient obtained is a positive value, and the temperature coefficient at a certain temperature is a constant value. Further, V BIAS may use a voltage source with a temperature coefficient to adjust the temperature coefficient of the current output by the current source.
The P-type MOS tube P1 and the P-type MOS tube P2 form a current mirror structure, and the generated current I 2 is amplified by a required multiple and then transmitted to a later-stage circuit module. In addition, the size of the P-type MOS tube P2 can be adjusted according to application requirements. Assuming that the ratio of the current mirrors is m, the output current is:
IREF＝m*I2 (10)
Meanwhile, the design of the invention has a negative feedback loop with very low loop gain, and the introduction of negative feedback can cause instability of the whole circuit, so that a necessary compensation circuit is needed to be added to stabilize the whole loop, and the reference current generating circuit is stabilized.
As shown in fig. 3, which shows the relationship between the simulated output reference current and the temperature, the minimum output current value is 34uA, the maximum output current value is 62uA, and the output current increases linearly with the temperature in the whole working temperature range, and the positive temperature characteristic is very good.
Example application
Specific parameters are as follows, the power supply voltage is 3.3V, the bias voltage V BIAS =1.5v, the resistance value of the resistor R1 is 2kΩ, the width-to-length ratio of the transistors Q1 and Q2 is 6u/200N, the width-to-length ratio of the nmos transistors N1 and N2 is 60u/350N, the width-to-length ratio of the pmos transistor P1 is 20u/1u, the width-to-length ratio of the pmos transistor P2 is 2x 20u/1u, i.e., the dimension ratio of P1 and P2 is 1:2.
The positive temperature coefficient current source circuit is integrated in the power amplifier, and the I REF is directly connected to the current source input end of the bias circuit of the power amplifier, and further, the radio frequency performance of the power amplifier is reduced mainly due to the increase of the working temperature. By using the current source circuit of positive temperature coefficient, when the temperature increases, the bias current and the operating current of the power amplifier can be increased by increasing the current by the reference current source, and the performance degradation due to the temperature increase can be compensated. Similarly, when the temperature is reduced, the radio frequency performance of the power amplifier is better, the bias current and the working current can be reduced by reducing the current of the reference current source, and the performance of the power amplifier can be reduced. Therefore, the performance of the power amplifier can be dynamically adjusted through the automatic adjustment of the reference current source current in the whole working temperature range, so that the performance fluctuation of the power amplifier in the whole working range is not great.
The application targets of the reference current source circuit in other circuits are similar, and the current temperature coefficient and the output current value of the reference current source are adjusted and optimized according to the specific application circuit and the performance requirements in the whole working temperature range.
The invention is used in circuits requiring increased current consumption at high temperature to ensure performance, especially in applications with relatively large temperature coefficient requirements. The circuit structure can be integrated in a process containing an NPN BJT, and the magnitude of the reference current is mainly determined by a bias voltage V BIAS, a base emitter voltage V BE of an NPN triode Q2, a gate-source voltage V GS2 of an N MOS tube N2 and a polysilicon resistor R 1. The invention also comprises a necessary loop circuit for ensuring the stability of the circuit and a current mirror structure with an adjustable MOS transistor size, so that the reference current can be adjusted. The circuit has the advantages of simple structure, stable positive temperature coefficient, flexible adjustment of the reference current, and greatly reduced complexity of the whole circuit.
The invention reduces the complexity of the circuit, has simple circuit structure and is easy to meet the design requirement of the circuit. The scope of the invention is not limited to the embodiments described herein. It is apparent that all examples using the inventive concept are within the scope and spirit of the invention as defined and defined by the appended claims.
Those of ordinary skill in the art will appreciate that all or part of the steps in the various methods of the above embodiments may be implemented by a program to instruct related hardware, the program may be stored in a computer readable storage medium, and the storage medium may include: read Only Memory (ROM), random access Memory (RAM, random Access Memory), magnetic or optical disk, and the like.
The specific embodiments described herein are offered by way of example only to illustrate the spirit of the invention. The foregoing examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that various modifications or additions to the described embodiments or substitutions thereof can be made by one skilled in the art without departing from the spirit of the invention or exceeding the scope of the invention as defined by the accompanying claims. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (9)
1. The positive temperature coefficient reference current source circuit is characterized by comprising a current source generating circuit and a current mirror output circuit, wherein the output end of the current source generating circuit is connected with the input end of the current mirror output circuit.
2. The positive temperature coefficient reference current source circuit according to claim 1, wherein the current source generating circuit comprises a triode Q1 and a triode Q2, and further comprises a MOS transistor N1 and a MOS transistor N2 respectively connected to emitters of the triode Q1 and the triode Q2.
3. The positive temperature coefficient reference current source circuit according to claim 2, wherein the collector of the triode Q1 is connected to the power supply terminal V BIAS through the resistor R1, the base of the triode Q1 is connected to the base of the triode Q2, the emitter of the triode Q1 is connected to the drain of the MOS transistor N1, the gate of the MOS transistor N1 is connected to the gate of the MOS transistor N2, the source of the MOS transistor N1 is grounded, the source of the MOS transistor N2 is grounded, the drain of the MOS transistor N2 is connected to the emitter of the triode Q2, and the collector of the triode Q2 is connected to the input terminal of the current mirror output circuit.
4. A positive temperature coefficient reference current source circuit according to claim 2 or 3, wherein the transistors Q1 and Q2 are NPN transistors.
5. A positive temperature coefficient reference current source circuit according to claim 2 or 3, wherein the MOS transistors N1 and N2 are N-type MOS transistors.
6. The positive temperature coefficient reference current source circuit according to claim 1, wherein the current mirror output circuit comprises a MOS transistor P1 and a MOS transistor P2, and the MOS transistor P1 and the MOS transistor P2 are P-type MOS transistors.
7. The positive temperature coefficient reference current source circuit according to claim 6, wherein the drain electrode of the MOS transistor P1 is connected to the output end of the current source generating circuit, the gate electrode of the MOS transistor P1 is connected to the gate electrode of the MOS transistor P2, the source electrode of the MOS transistor P1 is connected to the source electrode of the MOS transistor P2, and the gate electrode of the MOS transistor P2 outputs the current I REF.
8. A positive temperature coefficient reference current source circuit according to claim 6 or 7, wherein the transistor size ratio of the MOS transistor P1 and the MOS transistor P2 is adjusted according to the application requirement.
9. A positive temperature coefficient reference current source circuit according to claim 1,2 or 3, wherein the current source generating circuit comprises a weak feedback loop, and further comprising compensation circuitry for stabilizing the current source generating circuit.
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| CN202410503374.9A CN118312009A (en) | 2024-04-25 | 2024-04-25 | Positive temperature coefficient reference current source circuit |
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| CN202410503374.9A CN118312009A (en) | 2024-04-25 | 2024-04-25 | Positive temperature coefficient reference current source circuit |
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| CN202410503374.9A Pending CN118312009A (en) | 2024-04-25 | 2024-04-25 | Positive temperature coefficient reference current source circuit |
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| Country | Link |
|---|---|
| CN (1) | CN118312009A (en) |
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2024
- 2024-04-25 CN CN202410503374.9A patent/CN118312009A/en active Pending
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