CN118073165A - Substrate bonding device, substrate bonding system and substrate bonding method - Google Patents

Abstract

The invention discloses a substrate bonding device, a substrate bonding system and a substrate bonding method, and provides a substrate bonding technology capable of improving the bonding precision of a substrate and a substrate. The substrate bonding apparatus according to an embodiment of the present invention may include: a first chuck configured to support a first substrate; and a second chuck disposed above the first chuck to face the first chuck and configured to support a second substrate, the first chuck including: a first base; a first deforming plate that supports the first substrate and is attached to the first base so as to be capable of changing a distance from the first base; and a plurality of expansion members that are provided in a state where a space between the first base and the first deforming plate is in contact with an upper surface of the first base and a lower surface of the first deforming plate, and expand to deform the first deforming plate.

Description

Substrate bonding device, substrate bonding system and substrate bonding method

Technical Field

The present invention relates to a substrate bonding system including a substrate bonding apparatus and a substrate bonding method.

Background

In the manufacturing process of the semiconductor device, a substrate bonding process of bonding two or more substrates to each other may be performed. Such a substrate bonding process may be performed in order to increase the mounting density of semiconductor chips in a semiconductor device. For example, a semiconductor module having a structure in which semiconductor chips are stacked improves the mounting density of the semiconductor chips, and is advantageous in shortening the wiring length between the semiconductor chips and in high-speed signal processing. When manufacturing a semiconductor module of a stacked semiconductor chip configuration, the process of bonding in wafer units and then dicing in stacked semiconductor chip units can improve productivity as compared to bonding in semiconductor chip units.

The substrate bonding process may be performed in a wafer-to-wafer (wafer) manner in which two wafers are directly bonded without a separate medium. In general, the wafer-to-wafer method is performed by a bonding apparatus including a chuck for supporting a wafer and constituent elements for pressing the wafer.

Fig. 1 and 2 are diagrams showing an example of a conventional substrate bonding method in order. The substrate bonding process of the first substrate S1 and the second substrate S2 may be performed by the first chuck 100 supporting the first substrate S1 and the second chuck 200 supporting the second substrate S2. At this time, the substrate bonding process of the first substrate S1 and the second substrate S2 is started in a state where the first substrate S1 is suction-supported by the first chuck 100 and the second substrate S2 is suction-supported by the second chuck (200).

Referring to fig. 1, the first chuck 100 may be provided as a lower chuck and the second chuck 200 may be provided as an upper chuck. For precise bonding between the first substrate S1 and the second substrate S2, the first chuck 100 may further include a deforming plate for deforming the first substrate S1.

Referring to fig. 2, the substrate bonding process may be completed through a substrate (wafer) deformation, vacuum release for substrate suction, bonding process. The substrate deformation process is a process of deforming the substrate in order to bond the substrates, and the first substrate S1 and the second substrate S2 may be deformed by pressing structures provided to the first chuck 100 and the second chuck 200, respectively. Specifically, the center of the first substrate S1 and the center of the second substrate S2 may be brought into contact with each other as the pressurizing structure pressurizes the centers of the first substrate S1 and the second substrate S2 in a state where the vacuum adsorption is released from the center region of the second substrate S2. Thereafter, the vacuum suction to the second substrate S2 may be gradually released in a direction from the center of the second substrate S2 toward the peripheral region, whereby the bonding region between the first substrate S1 and the second substrate S2 may be gradually diffused. At this time, not only the second substrate S2 but also a part of the vacuum suction to the first substrate S1 may be released. When the diffusion of the bonding region is completed, the pressing of the substrates for deformation can be released, and the bonding surfaces of the first substrate S1 and the second substrate S2 are bonded to each other with the suction for supporting the substrates being released entirely, thereby completing the bonding process.

According to such a conventional substrate bonding method, there is a concern that local deformation is concentrated in the central portions of the substrates S1 and S2, and deformation is not generated in the peripheral portions of the substrates S1 and S2. That is, there is a problem in that local control of deformation of the substrate is performed to improve bonding precision.

Disclosure of Invention

The present invention is made to solve the above-described problems, and an object of the present invention is to provide a substrate bonding technique capable of controlling local deformation of a substrate by a chuck.

Further, the present invention aims to provide a substrate bonding technique capable of fine-tuning deformation of a substrate by controlling the deformation of the substrate by a chuck for each region.

The solution of the present invention is not limited to the above-mentioned solution, and other solutions not mentioned can be clearly understood by those skilled in the art from the following description.

According to an embodiment of the present invention, there may be provided a substrate bonding apparatus including: a first chuck configured to support a first substrate; and a second chuck disposed above the first chuck to face the first chuck and configured to support a second substrate so that the first substrate and the second substrate are bonded to each other. The first chuck may include: a first base; a first deforming plate that supports the first substrate and is attached to the first base so as to be capable of changing a distance from the first base; and a plurality of expansion members that are provided in a state where a space between the first base and the first deforming plate is in contact with an upper surface of the first base and a lower surface of the first deforming plate, and expand to deform the first deforming plate.

In an embodiment, the substrate bonding apparatus may further include: a controller that individually controls deformation of each of the plurality of expansion members.

In an embodiment, the controller may control a supply flow rate of the gas supplied to each of the plurality of expansion members.

In an embodiment, the controller may control at least one of a supply time point, a supply speed, and a supply time of the gas supplied to each of the plurality of expansion members.

In an embodiment, the plurality of expansion members may include: more than one first expansion member arranged below a central region of the first deforming plate; and a plurality of second expansion members disposed below a peripheral region of the first deformable disk surrounding the central region.

In an embodiment, the second expansion member may be arranged in a form surrounding the first expansion member and provided in the same size as the first expansion member.

In an embodiment, the second expansion member may be configured to surround the first expansion member and provided in a smaller size than the first expansion member.

In an embodiment, the second expansion member may be provided in more than two dimensions. The expansion device may further include a first size smaller than the first expansion member and a second size smaller than the first size, and the first expansion member and the second expansion member may be alternately arranged one by one along a circumference of the first expansion member.

In one embodiment, the first deforming plate may be attached to the substrate to fix the position of the substrate, and the plurality of expansion members may be expanded in a state where the substrate is attached to the first deforming plate.

In an embodiment, the plurality of expansion members in the expanded state may take the shape of one of a circle, a polygon with rounded corners, a circle through which the central area passes in a circle or a polygon, a polygon through which the central area passes in a circle or a polygon, and a polygon with rounded corners through which the central area passes in a circle or a polygon when viewed from above.

In an embodiment, the controller may control an expansion sequence of each of the plurality of expansion members.

According to an embodiment of the present invention, there may be provided a substrate bonding method including: an alignment step of aligning a second chuck provided with a second substrate on a first chuck including a first deforming plate supporting the first substrate; a first substrate deforming step of deforming the first deforming plate to deform the first substrate; and a bonding step of bonding the deformed first substrate and second substrate. The first substrate deforming step may include a process of deforming the first deforming plate by expanding a plurality of expansion members provided below the first deforming plate.

In an embodiment, the first substrate deformation step may control deformation of each of the plurality of expansion members individually and control deformation of the first deformable disk by area.

In an embodiment, the first substrate deformation step may control at least one of a supply flow rate, a supply time point, a supply speed, and a supply time of the gas supplied to each of the plurality of expansion members.

In an embodiment, the first substrate deformation step may further include a process of controlling an expansion sequence of each of the plurality of expansion members.

According to an embodiment of the present invention, there may be provided a substrate bonding system for bonding a substrate and a substrate. The substrate bonding system includes: a plasma processing device that performs plasma processing on a substrate; an alignment device for aligning the position of the substrate subjected to the plasma treatment by the plasma treatment device; and a substrate bonding device bonding the substrates aligned in position by the alignment device. The substrate bonding apparatus may include: a first chuck configured to support a first substrate; and a second chuck disposed above the first chuck to face the first chuck and configured to support a second substrate, the first chuck including: a first base; a first deforming plate that supports the first substrate and is attached to the first base so as to be capable of changing a distance from the first base; a plurality of expansion members provided in a space between the first base and the first deforming plate, and expanding in a state of being in contact with a lower surface of the first deforming plate to deform the first deforming plate; and a controller that individually controls deformation of each of the plurality of expansion members.

According to the embodiment of the present invention, the deformation of the first deforming plate is controlled by the plurality of expansion members, and the expansion of each expansion member is controlled individually to control the deformation of the first deforming plate by area, so that the deformation of the first deforming plate and the deformation of the first substrate deformed by the first deforming plate can be managed uniformly and precisely. The bonding process between the two substrates is performed in a state where the first substrate is precisely deformed, so that the reliability of the substrate bonding process can be improved.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

Drawings

Fig. 1 and 2 are diagrams showing an example of a conventional substrate bonding method in order.

Fig. 3 is a structural view showing the structure of a substrate bonding system according to an embodiment of the present invention.

Fig. 4 is a sectional view schematically showing the substrate bonding apparatus of fig. 3.

Fig. 5 is a flowchart illustrating a substrate bonding method according to an embodiment of the present invention.

Fig. 6 to 11 are sectional views sequentially showing a substrate bonding method according to an embodiment of the present invention.

Fig. 12 and 13 are top views showing the configuration of an expansion member according to an exemplary embodiment of the present invention.

(Description of the reference numerals)

70: Substrate bonding device

100: First chuck

110: First base

120: First deforming plate

140: Expansion member

150: Gas supply part

200: Second chuck

210: Second base

300: Controller for controlling a power supply

Detailed Description

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or by the embodiments.

In order to illustrate the invention and the operational advantages of the invention and the objects attained by practice of the invention, the following examples of preferred embodiments of the invention are given by way of illustration.

First, the terminology used in the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application as the singular may include the plural as long as it is not explicitly stated differently in the text. In the present application, it should be understood that the terms "comprises" and "comprising," etc. are intended to specify the presence of the stated features, integers, steps, operations, elements, components, or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof.

In describing the present invention, a detailed description of the related known structures or functions will be omitted when it is determined that the gist of the present invention may be confused with the detailed description thereof.

Fig. 3 illustrates an embodiment of a substrate bonding system according to the present invention.

Referring to fig. 3, the substrate bonding system 10 may include a pretreatment device, such as a plasma treatment device 40 and a cleaning device 50, an alignment device 60, and a substrate bonding device 70 disposed within the cleaning chamber 20. In addition, the substrate bonding system 10 may further include a cassette stage 30 disposed at one side of the cleaning chamber 20.

In an exemplary embodiment, the cleaning chamber 20 may be formed as a space in the form of a regular hexahedron having an inner space, and a space to cut off fine dust and foreign materials while maintaining a predetermined range of cleanliness.

The cassette stage 30 may provide a space for storing the substrates W. A carrier (FOUP; front opening unified pod) C capable of accommodating a plurality of substrates W may be supported on the support plate 32 of the cassette stage 30. The substrate accommodated in the carrier C may be moved into the cleaning chamber 20 by the transfer robot 22. For example, 3 carriers C may be arranged on the cassette stage 30. The first and second wafers bonded to each other may be accommodated in the first and second carriers C, and the wafer after the bonding process may be accommodated in the third carrier C.

The plasma processing apparatus 40 may perform plasma processing on the substrate surface. The plasma processing apparatus 40 may be an apparatus for irradiating a surface of a substrate W disposed in an inductively coupled plasma (ICP, induced coupled plasma) chamber with plasma to form dangling bonds (or mixed bonds) on the surface of the substrate. However, the plasma generated by the plasma processing apparatus is not limited to inductively coupled plasma, and may be, for example, capacitively coupled plasma, microwave plasma.

The cleaning device 50 may clean the surface of the substrate subjected to the plasma treatment by the plasma treatment device 40. The cleaning apparatus 50 may apply DIW (Deionized Water; deionized water) to the surface of the substrate using a spin coater. DIW not only cleans the surface of the substrate but also allows good bonding of hydroxyl groups (-OH) to the surface of the substrate, thereby more easily forming dangling bonds (dangling bond) on the surface of the substrate.

The alignment device 60 may sense a flat portion (or a notch) of the substrate W to align the substrate W. The substrate W aligned by the alignment device 60 may be transferred to the substrate bonding device 70 by the transfer robot 22.

The substrate bonding apparatus 70 of fig. 3 is described below.

Fig. 4 is a cross-sectional view illustrating a substrate bonding apparatus 70 according to an exemplary embodiment.

The substrate bonding apparatus 70 may include a lower chuck structure and an upper chuck structure. The upper chuck structure may fix the first substrate, and the lower chuck structure may fix the second substrate.

Either or both of the upper chuck structure and the lower chuck structure can be lifted and lowered, and the first substrate and the second substrate can be pressed and bonded. As an example, a pusher may be disposed on the upper chuck structure and the lower chuck structure, and the first substrate and the second substrate may be bonded to each other from the center portion to the outer periphery of the substrates by lifting and lowering the pusher. Alternatively, a pressurizing member that is blown by injecting air or gas may be disposed in the upper chuck structure and the lower chuck structure, and the first substrate and the second substrate may be bonded to each other from the center portion to the outer periphery of the substrates by the blowing operation of the pressurizing member.

Further, the substrate bonding system 10 may further include an annealing device (not shown) for heat-treating the bonded substrates. The substrate bonding system 10 may further include a polishing device (not shown) for polishing the surface of any one of the bonded substrates.

Referring to fig. 4, the substrate bonding apparatus 70 may include a first chuck 100, a second chuck 200, a controller 300, and a chamber 71 accommodating the first chuck 100 and the second chuck 200.

The first chuck 100 may support the first substrate S1. The first chuck 100 may be configured to fix the first substrate S1 using vacuum pressure. As an example, the first chuck 100 may include a first vacuum pump 190 capable of applying a vacuum pressure to the first vacuum groove 130 provided at a portion where the first substrate S1 is placed. If a vacuum pressure is formed in the first vacuum tank 130 by the first vacuum pump 190, the first substrate S1 may be vacuum-adsorbed to the first chuck 100. Alternatively, the first chuck 100 may be configured to support the first substrate S1 by using an electrostatic force (electrostatic force). When the first chuck 100 is configured to fix the first substrate S1 with an electrostatic force, the first chuck 100 may include an electrode that receives a power to generate an electrostatic force for fixing the first substrate S1.

The second chuck 200 may be disposed opposite to the first chuck 100 and support the second substrate S2. The second chuck 200 may be configured to fix the second substrate S2 using vacuum pressure. As an example, the second chuck 200 may include a second vacuum pump 290 capable of applying a vacuum pressure to a second vacuum groove 230 provided at a portion where the second substrate S2 is placed. If a vacuum pressure is formed in the second vacuum tank 230 by the second vacuum pump 290, the second substrate S2 may be vacuum-adsorbed to the second chuck 200. Alternatively, the second chuck 200 may be configured to support the second substrate S2 by using electrostatic force.

The first chuck 100 may be a lower chuck, and the second chuck 200 may be an upper chuck disposed above the first chuck 100. However, the present invention is not limited thereto, and the second chuck 200 may be a lower chuck, and the first chuck 100 may be an upper chuck disposed above the second chuck 200.

The first chuck 100 may include a first base 110, a first deforming plate 120 mounted above the first base 110, a first vacuum pump 190, a plurality of expansion members 140, and a gas supply 150.

The first deforming plate 120 may include a first vacuum groove 130 capable of forming a vacuum pressure. The first vacuum pump 190 may apply a vacuum pressure to the first vacuum tank 130 to vacuum-adsorb the first substrate S1 to one surface of the first deforming plate 120, or may release the vacuum pressure of the first vacuum tank 130 to release the vacuum-adsorption of the first substrate S1. The first vacuum groove 130 may include a plurality of vacuum grooves disposed between the center and the outer circumference of the first deforming plate 120, and the first vacuum pump 190 may be configured to independently adjust the pressure formed at the plurality of vacuum grooves.

The first deforming plate 120 may be mounted above the first base 110 in such a manner that a distance from the first base 110 can be varied. As an example, the outer periphery of the first deforming plate 120 may be fixed to the first base 110, and an inner portion of the fixed outer periphery of the first deforming plate 120 may be deformed to bulge by an external force. The first deforming plate 120 may deform the first substrate S1 in a state of being sucked and supported by the first substrate S1. At this time, the curvature (curvatures) of the deformed first substrate S1 may be adjusted by the curvature of the first deformation disk 120.

The first deformable disk 120 may comprise metal, ceramic, rubber, or a combination thereof. For example, the first deformable disk 120 may comprise aluminum or silicon carbide (SiC).

The expansion member 140 is provided in plurality in the space 121 between the first base 110 and the first deforming plate 120. The expansion member 140 is disposed in contact with the lower surface of the first deforming plate 120 and the upper surface of the first base 110. The expansion member 140 may be expanded by gas injected into the inside of the expansion member 140, thereby deforming the first deforming plate 120. As an example, the gas injected into the expansion member 140 may be air (air). The expansion member 140 may expand in a state where the first substrate S1 is adsorbed to the first deforming plate 120 to deform the first deforming plate 120, thereby deforming the first substrate S1.

The expansion member 140 may receive gas from the gas supply 150 to expand. When the expansion member 140 in a state of being expanded by receiving the gas from the gas supply part 150 is observed from above, one shape of a circle, a polygon having rounded corners, a circle through which a central region penetrates in a circle or a polygon, a polygon having rounded corners through which a central region penetrates in a circle or a polygon can be observed. For example, the shape of the expansion member 140 expanded by injecting gas into the inner space may include a ball, a column, a polygonal column, an annular ring, a tube form, or the like.

The expansion member 140 may include one or more first expansion members 141 disposed below a central region of the first deforming plate 120 and a plurality of second expansion members 142 disposed below a peripheral region surrounding the central region of the first deforming plate 120. That is, the plurality of second expansion members 142 may be configured in a form surrounding the first expansion member 141. As an example, as shown in fig. 6, the expansion member 140 may include one first expansion member 141 disposed below the center portion of the first deforming plate 120 and a plurality of second expansion members 142 surrounding the first expansion member 141. The number of the first expansion members 141, the number of the second expansion members 142, and the number of the types of sizes of the expansion members 140 may be changed according to the required joining precision, and the arrangement structure may be changed. This will be described in detail later.

The supply flow rate of the gas supplied to each expansion member 140, that is, the supply amount of the gas to each expansion member 140 may be controlled individually for each expansion member 140 and differently according to regions. Thereby, the curvature of the first deforming plate 120 can be controlled. For example, the flow rate of the gas supplied to the first expansion member 141 may be controlled to be greater than the flow rate of the gas supplied to the second expansion member 142. That is, the degree of expansion of the first expansion member 141 may be controlled to be greater than that of the second expansion member 142. At this time, if the difference between the amount of gas supplied to the first expansion member 141 and the amount of gas supplied to the second expansion member 142 increases, the curvature of the first deforming plate 120 increases, and the first substrate S1 supported by the first deforming plate 120 may be deformed to have an increased curvature. If the difference between the amount of gas supplied to the first expansion member 141 and the amount of gas supplied to the second expansion member 142 is small, the curvature of the first deforming plate 120 is reduced, and the first substrate S1 supported by the first deforming plate 120 may be deformed to have a reduced curvature.

The gas supply part 150 may include a supply line 152 connecting a gas supply source 151 for supplying gas to the expansion member 140 and the expansion member 140. The gas supply source 151 may supply gas to the inside of the expansion member 140 through the supply line 152. Each expansion member 140 may be connected to a gas supply portion 150 provided separately for each expansion member 140. That is, the gas supply source 151 and the supply line 152 may be provided in an amount corresponding to the number of the expansion members 140, and may be connected to the expansion members 140 in a one-to-one correspondence. A valve 153 for controlling the supply flow rate of the gas supplied to each expansion member 140 may be provided to each supply line 152. As an example, the valve 153 may be a flow control valve.

Each gas supply 150 may be individually controlled by the controller 300. The supply flow rate of the gas supplied to the inside of each expansion member 140 may be controlled as the gas supply portion 150 is controlled by the controller 300. As an example, the controller 300 may control the valves 153 provided in the respective supply lines 152 to control the supply flow rate of the gas supplied to the expansion member 140. On the other hand, unlike the above description, the gas supply part 150 may include one integrated gas supply source, and the supply line 152 connected to each expansion member 140 may be connected to one integrated gas supply source.

The second chassis 210 may include a second vacuum groove 230 capable of forming a vacuum pressure. The second vacuum pump 290 may apply a vacuum pressure to the second vacuum tank 230 to vacuum-adsorb the second substrate S2 to one surface of the second base 210, or may release the vacuum pressure of the second vacuum tank 230 to contact the vacuum-adsorption of the second substrate S2. The second vacuum groove 230 may include a plurality of vacuum grooves disposed between the center and the outer circumference of the second base 210, and the second vacuum pump 290 may be configured to individually adjust the pressure formed in the plurality of vacuum grooves.

The pressing pin 215 may be provided at a central portion of the second base 210 to be movable in a vertical direction. The pressing pin 215 may be configured to be reciprocally movable in a substantially vertical direction (for example, a Z direction) with respect to the second substrate S2. The pressurizing pin 215 may include an actuator for achieving the reciprocating movement. For example, the actuators of the pressure pin 215 may include a laminated piezoelectric actuator (multilayer piezoelectric actuator), a voice coil motor (voice coil motor), a rack and pinion (rack and pinion) engaged with the motor, and the like.

The controller 300 may be configured to comprehensively control a bonding process between the first substrate S1 and the second substrate S2 using the substrate bonding apparatus 70. For example, the controller 300 may control the operation of the first chuck 100 and the operation of the second chuck 200, and may be configured to control a chuck actuator (not shown) that performs the movement of the first chuck 100 and the movement of the second chuck 200. In addition, the controller 300 according to an embodiment of the present invention may be configured to individually control the plurality of expansion members 140 to control the bonding process between the first substrate S1 and the second substrate S2.

The controller 300 may individually control the plurality of expansion members 140. For example, the controller 300 may control the valve 153 corresponding to each of the plurality of expansion members 140 to control the supply flow rate of the gas, the supply time point of the gas, the supply speed of the gas, the supply time of the gas, etc. supplied to each expansion member 140.

Optionally, the controller 300 may also control the expansion sequence of each of the plurality of expansion members 140. For example, the controller may control the expansion start sequence and the expansion end sequence of each of the plurality of expansion members 140 by controlling the gas supply time point, the gas supply speed, the gas supply time, etc. to each expansion member 140 based on the size of each expansion member 140.

As an example, the controller 300 may control the plurality of expansion members 140 to have the same time point when the expansion is completed. When the first expansion member 141 and the second expansion member 142 are formed to be the same size, it is possible to control the gas supply speed to the first expansion member 141 to be greater than the gas supply speed to the second expansion member 142, and to control the gas supply time point and the gas supply time to be the same. When the sizes of the first and second expansion members 141 and 142 are different, the gas supply time point, the gas supply speed, and the gas supply time may be controlled based on the sizes thereof, respectively.

As an example, the controller 300 may control the time points at which the expansion of the plurality of expansion members 140 is completed to be different. When the first expansion member 141 and the second expansion member 142 are formed in the same size, it is possible to control the gas supply time point and the gas supply speed to each expansion member to be the same, and to control the gas supply time to the first expansion member 141 to be longer than the gas supply time to the second expansion member 142. When the sizes of the first and second expansion members 141 and 142 are different, the gas supply time point, the gas supply speed, and the gas supply time may be controlled based on the sizes thereof, respectively.

The controller 300 may be implemented in hardware, firmware, software, or any combination thereof. For example, the controller 300 may be a workstation computer, a desktop computer, a paint-on computer, a tablet computer, or the like. The controller 300 may be a simple controller, a processor such as a microprocessor, a CPU, a GPU, a processor configured by software, dedicated hardware, or firmware. The controller 300 may be implemented by Application specific hardware such as a general purpose computer or DSP (DIGITAL SIGNAL processes), FPGA (Field Programmable GATE ARRAY), and ASIC (Application SPECIFIC INTEGRATED Circuit), for example.

In some exemplary embodiments, the operation of the controller 300 may be implemented with instructions stored in a mechanically readable medium that can be read and executed by one or more processors. Here, a mechanically readable medium may include any mechanism for storing and/or transmitting information in a form readable by a machine (e.g., a computing device). For example, the mechanically readable medium may include ROM (Read Only Memory), RAM (Random Access Memory), magnetic disk storage media, optical storage media, flash memory devices, electrical, optical, acoustical or other form of electrical wave signals (e.g., carrier waves, infrared signals, digital signals, etc.), and any other signals.

The controller 300 may be implemented by firmware, software, computer programs, and instructions for performing a bonding process. For example, the controller 300 may receive data for feedback, generate signals for performing a bonding process, and be implemented by software performing predetermined operations.

The chamber 71 may surround the first chuck 100 and the second chuck 200. The chamber 71 may provide an inner space for performing a bonding process between the first substrate S1 and the second substrate S2. In an exemplary embodiment, a vacuum pressure or an atmospheric pressure may be formed in the inner space of the chamber 71.

The chamber 71 may include an opening 72. The first and second substrates S1 and S2 can be carried into and out of the inner space of the chamber 71 through the opening 72 of the chamber 71. The opening 72 may be hermetically sealed or sealed as necessary to protect the internal space of the chamber 71 from the external environment.

Fig. 5 is a flowchart illustrating a substrate bonding method according to an embodiment of the present invention. Fig. 6 to 11 are sectional views sequentially showing a substrate bonding method according to an embodiment of the present invention. Hereinafter, a substrate bonding method using the substrate bonding apparatus according to an embodiment of the present invention will be described in detail with reference to fig. 5 and fig. 6 to 11.

Referring to fig. 5 and 6, the second chuck 200 provided with the second substrate S2 is aligned on the first chuck 100 provided with the first substrate S1 (S100).

In the substrate alignment step (S100), the first substrate S1 may be loaded on the first chuck 100 such that the inactive surface of the first substrate S1 contacts the first chuck 100, and the second substrate S2 may be loaded on the second chuck 200 such that the inactive surface of the second substrate S2 contacts the second chuck 200. The bonding surface of the second substrate S2 loaded to the second chuck 200 may face the bonding surface of the first substrate S1 loaded to the first chuck 100.

The first chuck 100 may form a vacuum pressure in each of a first central vacuum groove 131 for vacuum-sucking a central region of the first substrate S1, a first intermediate vacuum groove 133 for vacuum-sucking an intermediate region between the central region and the peripheral region of the first substrate S1, and a first peripheral vacuum groove 135 for vacuum-sucking the peripheral region of the first substrate S1 in order to support the first substrate S1. In addition, the second chuck 200 may form a vacuum pressure in each of the second central vacuum groove 231 for vacuum-sucking the central region of the second substrate S2, the second intermediate vacuum groove 233 for vacuum-sucking the intermediate region between the central region and the peripheral region of the second substrate S2, and the second peripheral vacuum groove 235 for vacuum-sucking the peripheral region of the second substrate S2 in order to support the second substrate S2.

In the substrate alignment step (S100), the first chuck 100 and the second chuck 200 may be aligned in a vertical direction (e.g., Z direction). In order to align the first chuck 100 and the second chuck 200, at least one of the first chuck 100 and the second chuck 200 may be movable in a horizontal direction (for example, an X-direction and/or a Y-direction), and may be rotatable about a vertical direction (for example, a Z-direction).

Referring to fig. 5 and 7, after the first chuck 100 and the second chuck 200 are aligned, the first substrate S1 of the first chuck 100 is deformed (S200).

In the first substrate deforming step (S200), the first deforming plate 120 may be deformed in a state of supporting the first substrate S1, so that the first substrate S1 supported on one surface of the first deforming plate 120 is deformed. For example, the first deforming plate 120 may be deformed to bulge upward in a state where the first substrate S1 is vacuum-sucked, and the first substrate S1 may be deformed to bulge upward corresponding to the deformation of the first deforming plate 120. At this time, the first substrate S1 is deformed in a state of being closely adhered to the first deforming plate 120, and thus the deformed first substrate S1 may have a curvature corresponding to a curvature (curvatus) of one surface of the first deforming plate 120.

According to an embodiment of the present invention, the first substrate deforming step (S200) may include a process of deforming the first deforming plate 120 by expanding the plurality of expansion members 140 disposed under the first deforming plate 120. The plurality of expansion members 140 may individually control the respective deformations, whereby the deformations of the first deformable disc 120 may be controlled by region.

Specifically, the supply flow rate of the gas supplied to each expansion member 140, that is, the supply amount of the gas to each expansion member 140 may be controlled individually for each expansion member 140 and differently according to regions. Thereby, the curvature of the first deforming plate 120 can be controlled. For example, the flow rate of the gas supplied to the first expansion member 141 may be controlled to be greater than the flow rate of the gas supplied to the second expansion member 142. That is, the degree of expansion of the first expansion member 141 may be controlled to be greater than that of the second expansion member 142. At this time, if the difference between the amount of gas supplied to the first expansion member 141 and the amount of gas supplied to the second expansion member 142 increases, the curvature of the first deformation disk 120 increases, and the curvature of the first substrate S1 supported by the first deformation disk 120 may also increase. If the difference between the amount of gas supplied to the first expansion member 141 and the amount of gas supplied to the second expansion member 142 is small, the curvature of the first deforming plate 120 is reduced, and the first substrate S1 supported by the first deforming plate 120 may be deformed to have a reduced curvature.

On the other hand, the first substrate deformation step (S200) may further include a process of controlling the expansion order of the respective expansion members 140. For example, the expansion start sequence and the expansion end sequence of each of the plurality of expansion members 140 may be controlled by controlling the gas supply time point, the gas supply speed, the gas supply time, and the like to each expansion member 140 based on the size of each expansion member 140.

As an example, the first substrate deformation step (S200) may be controlled such that the time points at which the expansion of the plurality of expansion members 140 is completed are all the same. When the first expansion member 141 and the second expansion member 142 are formed to be the same size, it is possible to control the gas supply speed to the first expansion member 141 to be greater than the gas supply speed to the second expansion member 142, and to control the gas supply time point and the gas supply time to be the same. When the sizes of the first and second expansion members 141 and 142 are different, the gas supply time point, the gas supply speed, and the gas supply time may be controlled based on the sizes thereof, respectively.

As an example, the first substrate deformation step (S200) may be controlled such that the time points at which the expansion of the plurality of expansion members 140 is completed are all different. When the first expansion member 141 and the second expansion member 142 are formed in the same size, it is possible to control the gas supply time point and the gas supply speed to each expansion member to be the same, and to control the gas supply time to the first expansion member 141 to be longer than the gas supply time to the second expansion member 142. When the sizes of the first and second expansion members 141 and 142 are different, the gas supply time point, the gas supply speed, and the gas supply time may be controlled based on the sizes thereof, respectively.

When the deformation of the first substrate S1 by the first deforming plate 120 is completed, bonding between the first substrate S1 and the second substrate S2 is performed (S300). According to an embodiment of the present invention, the bonding between the first substrate S1 and the second substrate S2 may bond the peripheral region of the first substrate S1 and the peripheral region of the second substrate S2 by diffusing the bonding region between the first substrate S1 and the second substrate S2 after the first substrate S1 and the second substrate S2 are contacted at a contact point.

Referring to fig. 5 and 8, in order to bring the first substrate S1 and the second substrate S2 into contact at a contact point, the second chuck 200 releases the vacuum pressure to the second central vacuum tank 231 and maintains the vacuum pressure to the second intermediate vacuum tank 233 and the second peripheral vacuum tank 235. The pressing pins 215 may press the center of the second substrate S2 in a state where vacuum suction to the center region of the second substrate S2 is released. As the central region of the second substrate S2 pressurized by the pressurizing pin 215 is deformed to bulge toward the first substrate S1, the first substrate S1 and the second substrate S2 may be contacted at a contact point. A contact point may be defined as a bonding start point (bonding initiation point) at which bonding of the first substrate S1 and the second substrate S2 starts. For example, the bonding start point may be a point where the bonding surface center of the first substrate S1 and the bonding surface center of the second substrate S2 meet.

Referring to fig. 5 and 9, after that, vacuum suction to the second substrate S2 may be gradually released from the center of the second substrate S2 toward the peripheral region of the second substrate S2, so that the bonding region between the first substrate S1 and the second substrate S2 is diffused. When the second chuck 200 releases the vacuum pressure to the second intermediate vacuum groove 233, the bond between the first substrate S1 and the second substrate S2 can be automatically formed without the application of other external force. The central region and the intermediate region of the first substrate S1 may be bonded to the central region and the intermediate region of the second substrate S2 by diffusion of the automatic bonding between the first substrate S1 and the second substrate S2.

In an exemplary embodiment, the bonding surface of the first substrate S1 and the bonding surface of the second substrate S2 may have plasma-treated or wet-treated surfaces, respectively. For example, an-OH functional group by surface treatment is formed on each of the bonding surface of the first substrate S1 and the bonding surface of the second substrate S2, and when the first substrate S1 and the second substrate S2 are bonded, the-OH functional group present on the bonding surface of the first substrate S1 and the-OH functional group present on the bonding surface of the second substrate S2 may be automatically bonded by hydrogen bonding (hydrogen bond).

On the other hand, when bonding between the first substrate S1 and the second substrate S2 is diffused, a chuck actuator (not shown) that moves the first chuck 100 and the second chuck 200 may decrease a distance between the first chuck 100 and the second chuck 200 to planarize (flat) a central region of the first deforming plate 120 located inside the first central vacuum groove 131 and planarize an intermediate region of the first deforming plate 120 between the first central vacuum groove 131 and the first intermediate vacuum groove 133. At this time, the degree of expansion of each expansion member 140 may be controlled in order to facilitate flattening of the central region and the intermediate region of the first deformable disk 120. As an example, as shown in fig. 9, the expansion degree of the expansion member 140 located in the region corresponding to the first intermediate vacuum groove 133 may be increased. Alternatively, the degree of expansion of the expansion member 140 located in the region corresponding to the first center vacuum groove 131 may be reduced. As the central region and the middle region of the first deforming plate 120 become flat, the bonding surface of the first substrate S1 and the bonding surface of the second substrate S2 may be joined smoothly.

The controller 300 may control the degree of expansion of each expansion member 140 based on a process flow when bonding between the first substrate S1 and the second substrate S2 is diffused. In addition, the distance between the first chuck 100 and the second chuck 200 may be adjusted.

Referring to fig. 5 and 10, after that, the second chuck 200 releases the vacuum pressure to the second peripheral vacuum groove 235, and the first chuck 100 releases the vacuum pressure to the first peripheral vacuum groove 135, so that the bonding between the peripheral region of the first substrate S1 and the peripheral region of the second substrate S2 can be automatically formed without the application of other external force. If the bonding between the peripheral region of the first substrate S1 and the peripheral region of the second substrate S2 is completed, a bonded substrate (bonded substrate) in which the bonding surface of the first substrate S1 and the bonding surface of the second substrate S2 are bonded to each other may be formed.

As shown in fig. 11, if the bonding between the first substrate S1 and the second substrate S2 is completed, a step of unloading the bonded substrate may be performed. The second chuck 200 may be moved in a direction away from the first chuck 100 in order to unload the bonded substrate, and the first chuck 100 may be entirely desorbed from the bonded substrate.

On the other hand, fig. 12 and 13 show various examples in which a plurality of expansion members 140 are arranged. As shown in fig. 12, a plurality of expansion members 140 disposed between the first base 110 and the first deforming plate 120 may be provided to all have the same size. It may be that a first expansion member 141 is provided at the center of the first deforming plate 120, and a second expansion member 142 is provided in a form surrounding the first expansion member 141. As shown in fig. 12 (a), 12 (b), and 12 (c), the number of the second expansion members 142 may be increased according to the deformation accuracy of the first substrate S1 to be obtained.

Unlike the one shown in fig. 12, a plurality of expansion members 140 disposed between the first base 110 and the first deforming plate 120 may be provided as shown in fig. 13 to have different sizes for each expansion member 140. For example, as shown in fig. 13 (a) and 13 (b), the second expansion member 142 may be provided in a smaller size than the first expansion member 141.

In addition, the second expansion member 142 may be provided in two or more sizes. As shown in fig. 13 (c), the second expansion member 142 may include a first-sized expansion member 142 smaller than the first expansion member 141 and a second-sized expansion member 143 smaller than the first size. When the second expansion member 142 is formed in two or more sizes, as shown in fig. 13 (c), the second expansion members 142 may be alternately arranged one by one in size along the circumference of the first expansion member 141.

The more the number of expansion members 140 is increased, and the more the expansion members 140 are variously sized, the more closely the deformation of the first deformation disk 120 can be controlled. Thereby, the curvature of the first substrate S1 can be further precisely controlled. That is, the local deformation of the first substrate S1 can be precisely controlled by adjusting the number of the expansion members 140 and the size of the expansion members 140, whereby the bonding precision of the substrate and the substrate is increased, and the reliability of the substrate bonding process can be improved.

On the other hand, fig. 12 and 13 show examples in which all the expansion members 140 appear circular when viewed from above, but as described above, the expansion members 140 in the expanded state may appear one shape of a circle, a polygon with rounded corners, a circle through which the central area penetrates in a circle or a polygon, a polygon with rounded corners through which the central area penetrates in a circle or a polygon, when viewed from above. For example, the shape of the expansion member 140 expanded by injecting gas into the inner space may include a ball, a column, a polygonal column, an annular ring, a tube form, or the like. In addition, the number of the first expansion members 141 may be set to be plural.

The present invention has been described above with reference to the embodiments and drawings, and various modifications may be made by those of ordinary skill in the art without departing from the technical spirit of the present invention. In addition, the technical ideas described in the embodiments of the present invention may be implemented either individually or in combination with two or more of each other.

Claims (20)

1. A substrate bonding apparatus comprising:

a first chuck configured to support a first substrate; and

A second chuck disposed above the first chuck to face the first chuck and configured to support a second substrate,

The first chuck includes:

A first base;

A first deforming plate that supports the first substrate and is attached to the first base so as to be capable of changing a distance from the first base; and

And a plurality of expansion members which are provided in a state where a space between the first base and the first deforming plate is in contact with an upper surface of the first base and a lower surface of the first deforming plate, and which expand to deform the first deforming plate.

2. The substrate bonding apparatus according to claim 1, wherein,

The substrate bonding apparatus further includes:

A controller that individually controls deformation of each of the plurality of expansion members.

3. The substrate bonding apparatus according to claim 2, wherein,

The controller controls a supply flow rate of the gas supplied to each of the plurality of expansion members.

4. The substrate bonding apparatus according to claim 3, wherein,

The controller controls at least one of a supply time point, a supply speed, and a supply time of the gas supplied to each of the plurality of expansion members.

5. The substrate bonding apparatus according to claim 1, wherein,

The plurality of expansion members includes:

more than one first expansion member arranged below a central region of the first deforming plate; and

And a plurality of second expansion members disposed below a peripheral region surrounding the central region of the first deformable disk.

6. The substrate bonding apparatus according to claim 5, wherein,

The second expansion member is arranged in a form surrounding the first expansion member and provided in the same size as the first expansion member.

7. The substrate bonding apparatus according to claim 5, wherein,

The second expansion member is arranged in a form surrounding the first expansion member and provided in a smaller size than the first expansion member.

8. The substrate bonding apparatus according to claim 7, wherein,

The second expansion member comprises expansion members of a first size smaller than the first expansion member and expansion members of a second size smaller than the first size,

The first-sized expansion members and the second-sized expansion members are alternately arranged one by one along a circumference of the first expansion member.

9. The substrate bonding apparatus according to claim 1, wherein,

The first deformation disk adsorbs the substrate to fix the position of the substrate,

The plurality of expansion members expand in a state where the substrate is adsorbed to the first deforming plate.

10. The substrate bonding apparatus according to claim 1, wherein,

The plurality of expansion members in an expanded state may be in the shape of one of a circle, a polygon having rounded corners, a circle through which a central region penetrates in a circle or a polygon, a polygon through which a central region penetrates in a circle or a polygon, and a polygon having rounded corners through which a central region penetrates in a circle or a polygon when viewed from above.

11. The substrate bonding apparatus according to claim 3, wherein,

The controller controls an expansion sequence of each of the plurality of expansion members.

12. A substrate bonding method comprising:

an alignment step of aligning a second chuck provided with a second substrate on a first chuck including a first deforming plate supporting the first substrate;

A first substrate deforming step of deforming the first deforming plate to deform the first substrate; and

A bonding step of bonding the deformed first substrate and second substrate,

The first substrate deforming step includes a process of deforming the first deforming plate by expanding a plurality of expansion members provided below the first deforming plate.

13. The method for bonding a substrate according to claim 12, wherein,

The first substrate deforming step controls deformation of each of the plurality of expansion members individually and controls deformation of the first deforming plate by area.

14. The substrate bonding method according to claim 13, wherein,

The first substrate deforming step controls at least one of a supply flow rate, a supply time point, a supply speed, and a supply time of the gas supplied to each of the plurality of expansion members.

15. The method for bonding a substrate according to claim 14, wherein,

The first substrate deforming step further includes a process of controlling an expansion sequence of each of the plurality of expansion members.

16. A substrate bonding system for bonding a substrate and a substrate, wherein,

The substrate bonding system includes:

a plasma processing device that performs plasma processing on a substrate;

An alignment device for aligning the position of the substrate subjected to the plasma treatment by the plasma treatment device; and

A substrate bonding means for bonding the substrates aligned in position by the alignment means,

The substrate bonding apparatus includes:

a first chuck configured to support a first substrate; and

A second chuck disposed above the first chuck to face the first chuck and configured to support a second substrate,

The first chuck includes:

A first base;

a first deforming plate that supports the first substrate and is attached to the first base so as to be capable of changing a distance from the first base;

A plurality of expansion members provided in a space between the first base and the first deforming plate, and expanding in a state of being in contact with a lower surface of the first deforming plate to deform the first deforming plate; and

A controller that individually controls deformation of each of the plurality of expansion members.

17. The substrate bonding system of claim 16, wherein,

The controller controls at least one of a supply flow rate, a supply time point, a supply speed, and a supply time of the gas supplied to each of the plurality of expansion members.

18. The substrate bonding system of claim 16, wherein,

The plurality of expansion members includes:

One or more first expansion members disposed in a central portion of the first deformable plate; and

One or more second expansion members are disposed in a manner surrounding the first expansion member.

19. The substrate bonding system of claim 16, wherein,

The first deformation disk adsorbs the substrate to fix the position of the substrate,

The plurality of expansion members expand in a state where the substrate is adsorbed to the first deforming plate.

20. The substrate bonding system of claim 17, wherein,

The controller controls an expansion sequence of each of the plurality of expansion members.