CN114582774A - Apparatus and method for physical transfer of fragile microelectronic components - Google Patents

Abstract

The present application relates to an apparatus and method for physical transfer of fragile microelectronic components. An apparatus for picking a singulated microelectronic component from a support structure, the apparatus comprising a picker having at least two vacuum channels opening to different portions of a picking surface of the picker and in selective communication with at least one vacuum source. The apparatus further includes a controller programmed to initiate communication between the at least one vacuum source and at least one of the at least two vacuum channels, respectively, at a time, and to initiate communication between the at least one vacuum source and at least another of the at least two vacuum channels at a subsequent time. Methods of operation are also disclosed.

Description

Apparatus and method for physical transfer of fragile microelectronic components

Priority requirement

This application claims priority to U.S. provisional patent application serial No. 63/119,935 entitled "apparatus and method for physical transfer of fragile microelectronic components" filed on 12/1/2020.

Technical Field

Embodiments disclosed herein relate to an apparatus and method for physically transferring fragile microelectronic components. More particularly, embodiments disclosed herein relate to apparatus and methods for picking singulated fragile microelectronic components from a support structure.

Background

As the performance of electronic devices and systems increases, there is a related need for improved performance of the microelectronic components of such devices and systems while maintaining or even reducing the form factor (e.g., length, width, and height) of the microelectronic component assemblies. Such requirements are typically associated with, but not limited to, mobile devices and high performance systems. In order to maintain or reduce the footprint and height of an assembly of microelectronic components (e.g., semiconductor dies), reduce bond wire thickness, while increasing bond wire uniformity, by reducing component thickness, and using pre-formed and in-situ formed dielectric materials in the bond wires (e.g., spaces between stacked components), three-dimensional (3D) assemblies of stacked components equipped with so-called through-silicon vias (TSVs) have become more common for vertical electrical (e.g., signal, power, ground/bias) communication between stacked components. Such prefabricated dielectric materials include, for example, so-called non-conductive films (NCFs) and Wafer Level Underfills (WLUFs), which terms are often used interchangeably. The in-situ formed dielectric material may comprise silicon oxide as well as very thin polymers. While effectively reducing the height of the 3D microelectronic component assembly, reducing the thickness of the microelectronic component (e.g., semiconductor die) to about 50 μm or less increases device fragility and susceptibility to micro-cracking and cracking under stresses, such as compressive (e.g., impact) stresses from contact with processing equipment, and tensile and bending stresses experienced during picking of the microelectronic element from a support structure having a pick-up head or "picker", for example, using vacuum in pick and place operations. Non-limiting examples of microelectronic component assemblies that include multiple stacked thin microelectronic components that may be subject to stress-induced cracking include assemblies of semiconductor memory dies alone or in combination with other die functions (e.g., logic), including so-called high bandwidth memory (HBMx), Hybrid Memory Cube (HMC), and chip-to-wafer (C2W) assemblies.

Disclosure of Invention

Embodiments of the present disclosure include an apparatus for picking a singulated microelectronic component from a support structure, the apparatus comprising a picker carried at a distal end of a picker arm, the picker comprising at least two vacuum channels leading to different portions of a pick face. At least one vacuum source is in selective communication with the at least two vacuum channels, and the controller is programmed to separately initiate communication between the at least one vacuum source and at least one of the at least two vacuum channels at a time, and initiate communication between the at least one vacuum source and at least another of the at least two vacuum channels at a subsequent time.

Embodiments of the present disclosure include a method for removing a singulated microelectronic component from a support, the method comprising: the singulated microelectronic components, now laterally separated from each other, are adhered to the upper surface of the support structure; positioning a pick head over and in close proximity to a target singulated microelectronic component; activating a vacuum through a set of vacuum channels leading to a pickup face of the pickup head over a portion of the target singulated microelectronic element; and subsequently activating vacuum through one or more other sets of vacuum channels leading to the pickup face of the pickup head over one or more other portions of the target singulated microelectronic component.

Drawings

FIG. 1 is a line illustration of a photomicrograph of a non-uniform peeling of a semiconductor die from a mounting tape;

FIG. 2 is a photomicrograph of a damaged semiconductor die resulting from non-uniform stress applied to the die during a die pick-up ejection process;

FIG. 3 is a schematic partial cross-sectional side view of a portion of a pick and place apparatus according to an embodiment of the present disclosure;

fig. 3A is a schematic view of a pickface of a picker of the apparatus of fig. 3, and fig. 3B is a side cross-sectional schematic view of the picker;

fig. 4A to 4F schematically depict an embodiment of a sequence of methods of removing a microelectronic component from a mounting film using the pick and place apparatus of fig. 3, 3A and 3B according to the present disclosure;

fig. 5, 5A and 5B schematically depict another embodiment of a sequence of methods of removing a microelectronic component from a mounting film using differently configured pick and place devices according to the present disclosure;

FIG. 6 is a schematic view of a pick and place apparatus according to an embodiment of the present disclosure; and

fig. 7 is a flow chart of a method of picking up a semiconductor die according to an embodiment of the present disclosure.

Detailed Description

An apparatus in the form of an embodiment of a pick-up configured with a plurality of different vacuum channels is disclosed. The channels may be connected to different vacuum sources that may be operated at different times and in different sequences to release the microelectronic component (e.g., semiconductor die) from the support structure to which the microelectronic component is adhered while reducing stress differences on different portions of the semiconductor die.

The following description provides specific details, such as sizes, shapes, and orientations, in order to provide a thorough description of embodiments of the present disclosure. However, it will be understood and appreciated by those skilled in the art that embodiments of the present disclosure may be practiced without these specific details, as the embodiments of the present disclosure may be practiced in conjunction with conventional manufacturing techniques employed in the industry. Additionally, the description provided below may not form a complete process flow for physical transfer of microelectronic components or for apparatus to effect such physical transfer. Only those process actions and structures necessary to understand the embodiments of the present disclosure are described in detail below. Additional acts of transferring the microelectronic components or fabricating a complete device as described herein may be performed by conventional fabrication processes.

The drawings provided herein are for illustration purposes only and are not meant to be actual views of any particular material, component, structure, device, or system. Variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, the embodiments described herein should not be construed as limited to the particular shapes or regions illustrated, but are to include deviations in shapes that result, for example, from manufacturing. For example, the regions illustrated or described as box-shaped may have rough and/or non-linear features, while the regions illustrated or described as circular may contain some rough and/or linear features. Furthermore, the acute angles between the illustrated surfaces may be rounded, and vice versa. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the present claims. The drawings are not necessarily to scale.

Embodiments may be described in terms of processes that are depicted as flowcharts, flow diagrams, structure diagrams, or block diagrams. Although a flowchart may describe the operational acts as a sequential process, many of the acts can be performed in parallel or substantially concurrently in another sequence. In addition, the order of the actions may be rearranged. A process may correspond to a method, a thread, a function, a procedure, a subroutine, a subprogram, other structure, or a combination thereof. Furthermore, the methods disclosed herein may be implemented in hardware, software, or both. If implemented in software, the functions may be stored on or transmitted over as one or more instructions or code on a computer-readable medium. Computer-readable media includes both computer storage media and communication media including any medium that facilitates transfer of a computer program from one place to another.

In the description, for convenience, the same or similar reference numerals may be used to identify features and elements common between the respective drawings in some cases.

Any reference herein to elements using a name such as "first," "second," etc., does not limit the number or order of such elements unless such a limit is explicitly stated. Rather, these names may be used herein as a convenient method of distinguishing between two or more elements or instances of an element. Thus, reference to a first element and a second element does not imply that only two elements may be employed there or that the first element must somehow precede the second element. In addition, a set of elements may include one or more elements unless otherwise specified.

Referring now to fig. 1 and 2 of the drawings, as a specific context of embodiments of the present disclosure, and as described above, as package size requirements (i.e., form factor) become smaller, not only does the footprint, but the thickness of each microelectronic component (e.g., semiconductor die) in an assembly of stacked components must be reduced. Semiconductor dies as thin as about 50 μm have been commercialized, and semiconductor dies as thin as about 30 μm or less (e.g., about 20 μm) are under development. Particularly when the memory device contains a large number (e.g., 8, 12, 16 or more) of stacked memory dies in combination with logic dies, as well as other combinations of stacked dies, there is a current trend toward thinner microelectronic components in the form of semiconductor dies, as the stack height needs to be maintained or even reduced, for example, in mobile devices. Such ultra-thin dies may be used in conjunction with the implementation of near-zero bond wire (NZB) spacing between adjacent stacked dies. One example of NZB development involves hybrid bonding between adjacent stacked dies using plasma activated silicon oxide or ultra-thin polymers from the dies as bond wire dielectrics, and maintaining metal-to-metal contact interfaces through bond wires between circuits of adjacent stacked dies. Reducing the stress on such ultra-thin dies during processing becomes more significant to prevent yield loss (i.e., the percentage of defective dies produced from a given wafer or other substrate, or lot of wafers or substrates) caused by processing the ultra-thin dies during chip-to-wafer (C2W) or multi-die stacking processes (e.g., thermocompression bonding).

While many sources of process-induced micro-cracking and cracking of microelectronic components are known, one particular damage-causing mechanism becomes apparent when the thickness of these elements is reduced below about 60-65 μm, and has developed into a significant problem when the element thickness is further reduced. As is well known to those of ordinary skill in the relevant art, a large number of microelectronic components in the form of semiconductor dies may be fabricated on a semiconductor (e.g., silicon) wafer. After the integrated circuits at the die locations laterally spaced from each other are formed in and over the so-called active surface, along with optional conductive through-silicon vias (TSVs) extending from the integrated circuits to the wafer backside, the wafer is thinned from an initial thickness, typically in the range of 600 to 700 μm, to a final, significantly reduced thickness, now about 50 μm, exposing the ends of the TSVs, if present. The thinned wafer, which is adhesively secured to a support structure peripherally supported on a film frame in the form of a polymer mounting film (sometimes referred to as a "mounting tape"), is then separated or "singulated" into discrete semiconductor die using, for example, a diamond coated wafer saw, a plasma dicing process, or a so-called "stealth" dicing process. After singulation, the mounting film is stretched laterally over the frame to separate the singulated dies, which are then picked up one by one from the mounting film by a pick-up having a vacuum channel connected to a vacuum source and leading into close proximity to the pick-up face of each target die. In many cases, an ejector that pushes the die to be picked up from under the mounting film upward is employed, along with the upward movement of the picker, when the vacuum is activated in the vacuum channel, to facilitate release of the die from the adhesive of the film.

Typically, when a semiconductor die is picked from an adhesive on a mounting film using a conventional pick-up that includes a plurality of vacuum channels leading to a downwardly facing pick-up face that moves directly over the semiconductor die, a substantially uniform amount of vacuum is applied to the die across the die footprint by all of the vacuum channels. However, it has been determined that the central region of the semiconductor die that is picked up is more easily released from the mounting film adhesive than the peripheral region of the semiconductor die. In the case of picking up thin, e.g. about 50 μm thick, semiconductor dies, damage and even breakage of the dies may result. Fig. 1 shows uneven die peeling DP from the adhesive film, while fig. 2 shows broken die BD on the mounting film from unsuccessful die pick-up. This phenomenon is responsive to stress on the semiconductor material of the die between a central region of the die that moves upward with the pick-up head and one or more peripheral regions of the die that remain adhered to the adhesive of the mounting film as the pick-up face of the pick-up pulls the die upward from the mounting film. In other words, the tensile and bending stresses between the central region of the semiconductor die fixed to the pick-up face and released from the film adhesive and the peripheral region remaining adhered to the mounting film may cause micro-cracking or even cracking of the semiconductor die.

Referring now to fig. 3, 3A and 3B, a first embodiment of the apparatus and method of the present disclosure is shown that addresses the foregoing problems. In fig. 3, a schematic view of a part of a pick and place device 100 is shown. In relevant part, the pick and place device 100 is configured to support a mounting membrane 102, which mounting membrane 102 may also be characterized as a mounting tape and has an adhesive material 104 thereon, which adhesive material 104 is peripherally mounted to a membrane frame 106. As shown, the mounting film 102 with singulated semiconductor die SD adhered thereto has been laterally stretched to increase the spacing S between laterally adjacent semiconductor die SD to facilitate removal of individual semiconductor die SD by the picker 110. A multi-stage ejector 120 is depicted in a position below the semiconductor die SD with which the picker 110 is aligned.

Fig. 3A and 3B schematically depict a picker 110 that includes a first central set of vacuum channels 112 and a second peripheral set of vacuum channels 114 that surround the first set of vacuum channels 112. Each set of vacuum channels may be located in a separately formed block of material, as shown by interface I in fig. 3 and 3A, and subsequently assembled with another block and connected to a manifold dedicated to the vacuum channels of the block, respectively. As can be appreciated with reference to fig. 3, the length and width dimensions of the pick-up surface 116 of the picker 110 are slightly less than the similar dimensions (i.e., footprint) of the target semiconductor die SD to be picked, and the first and second sets of vacuum channels 112 and 114, respectively, open onto the pick-up surface 116. The first set of vacuum channels 112 and the second set of vacuum channels are in selective individual communication with one or more vacuum sources through vacuum lines and control valves operable by a drive motor operable in response to a controller containing one or more processors and associated memory storing operating programs for the pick and place apparatus 100, the structure and operation of the foregoing embodiments and the embodiments described below being described in more detail with reference to fig. 6 and 7 of the drawings. It is contemplated that instead of the second peripheral set of vacuum channels 114, peripheral slit channels leading to the pickface 116 of the picker 110 may be used to apply the vacuum. Thus, the term "group" of vacuum channels refers to and encompasses a single channel, or a smaller number of channels (e.g., a plurality of slits), for applying a vacuum over a surface area substantially equal to the surface area to which the plurality of smaller channels open.

Further, in another implementation, the peripheral vacuum channels may each be configured as an "L" shaped channel, each channel spanning a corner and an adjacent portion for respective placement against each of the four corners of the semiconductor die to be picked up.

Referring now to fig. 4A through 4F, die pick operations according to embodiments of the present disclosure will be described. In fig. 4A, a vacuum is applied through peripheral vacuum slots 122 of multi-stage die ejector 120 outside the die footprint to secure mounting film 102 and semiconductor die SD adhered thereto by adhesive 104. In fig. 4B, the picker 110 is lowered by a picker arm (not shown, see fig. 6) of the pick and place apparatus 100. In fig. 4C, vacuum is applied by the pick-up face 116 of the pick-up 110, as indicated by the peripheral arrows through the second peripheral set of vacuum channels 114. In fig. 4D, outer stage ejector member 124 of multi-stage ejector 120 is dropped from beneath mounting film 102, and then, as shown in fig. 4E, picker 110 is slightly raised (e.g., about 50 μm or less, as programmed) in concert with the extension of outer stage ejector member 124 of multi-stage ejector 120 to facilitate peeling off the peripheral portion of semiconductor die SD adjacent its lateral edges under the vacuum force applied from adhesive 104 on mounting film 102 through peripheral vacuum channel 114. As shown in fig. 4F, while vacuum is maintained through the second set of vacuum channels 114, vacuum is applied through the first set of vacuum channels 112, as indicated by the three central arrows, and the pickup 110 is raised simultaneously with the extension of the mid-stage ejector member 126 and the inner-stage ejector member 128 of the multi-stage ejector 120 to reduce the contact area of the adhesive 104 with the underside of the semiconductor die SD. Thus, during the process of removing the semiconductor die SD from the mounting film 102, the vacuum applied through the first and second sets of vacuum channels 112, 114 on the pickup face 116 of the pickup 110 substantially uniformly secures the surface of the semiconductor die SD to the pickup face 116, thereby reducing or eliminating the stress induced by conventional techniques that tend to pull different (i.e., laterally spaced) surface portions of the adhesive secured to the pickup face and the mounting film, respectively.

In other implementations of the foregoing method, it is contemplated that each stage of ejector members 124, 126, 128 of multi-stage ejector 120 may be extended prior to the application of vacuum by picker 110, or vacuum may be applied through one or both sets of vacuum channels 112, 114 prior to activation of the multi-stage ejector.

In some implementations of embodiments of the present disclosure, it is also contemplated that the vacuum applied through vacuum channels 112 and 114 may be pulsed on and off rapidly and intermittently for a brief period of time to further facilitate release of the target semiconductor die SD from adhesive 104 by subsequently applying the vacuum. In addition, the vacuum channels 112, 114 may be intermittently pulsed with vacuum and positive air pressure to loosen the target semiconductor die SD prior to the subsequent application of vacuum. Thus, the term "vacuum source" as used herein refers to and encompasses not only devices configured to supply a vacuum, but optionally also devices configured to supply a positive air pressure to the respective sets of vacuum channels 112, 114. It is also contemplated that ejector members 124, 126 and 128 of multi-stage ejector 120 may similarly be sequentially pulsed upwardly and downwardly while vacuum applied through peripheral vacuum slot 122 maintains mounting film 102 on multi-stage ejector 120 in order to release target semiconductor die SD.

Referring now to fig. 5 and 5A, a second embodiment of the apparatus 200 and method of the present disclosure is shown that addresses the foregoing problems. In fig. 5, a schematic view of a part of a pick and place device 200 is shown. In relevant part, the pick and place device 200 is configured to support a mounting membrane 102, which mounting membrane 102 may also be characterized as a mounting tape and has an adhesive material 104 thereon, which adhesive material 104 is peripherally mounted to a membrane frame 106. As shown, the mounting film 102 with singulated semiconductor die SD adhered thereto has been stretched to increase the spacing S between laterally adjacent semiconductor die SD to facilitate removal of individual semiconductor die SD by the picker 210. A multi-stage die ejector 120 is depicted in a position below the semiconductor die SD with which the pick 210 is aligned.

Fig. 5A schematically depicts a pickup 210 that includes multiple (e.g., five) sets of mutually parallel linearly arranged vacuum channels 212, 214, 216, 218, and 220, each set being adjacent to one or more other sets extending from one side of a pickup face 222 to the other, transverse to the linear orientation of the sets. As shown by interface I in fig. 5A, each set of vacuum passages 212, 214, 216, 218, and 220 may be formed in a separate block of material for subsequent assembly with other blocks and connection to a manifold dedicated to the set of vacuum passages, respectively. It will be appreciated by reference to fig. 5 that the length and width of the pick-up face 222 of the picker 210 is slightly less than the similar size (i.e., footprint) of the semiconductor die SD to be picked, and that the first through fifth sets of vacuum channels 212, 214, 216, 218 and 220 open onto the pick-up face 222. Each set of vacuum channels 212, 214, 216, 218, 220 is in selective, separate communication with one or more vacuum sources through vacuum lines and control valves, respectively, the control valves being operable by drive motors operable in response to a controller including one or more processors and associated memory storing operating programs for the pick and place apparatus 200, the structure and operation of which are described in greater detail with reference to fig. 6 and 7 of the drawings.

Referring now to fig. 5 and 5A of the drawings, a die pick operation according to an embodiment of the present disclosure will be described. Unlike the embodiment of fig. 3, 3A and 3B, after vacuum is applied to the underside of mounting film 102 via peripheral vacuum slots 122 of multi-stage ejector 120, pickup face 222 of pickup 210 is lowered into close proximity (e.g., about 50 μm or less) with semiconductor dies SD, vacuum is initially applied through linear set of vacuum channels 212 to lift the aligned portions of semiconductor dies SD, and while vacuum is maintained through vacuum channels 212, vacuum is applied through linear set of vacuum channels 214, followed by sequential application of vacuum through respective sets of vacuum channels 216, 218 and 220, respectively, while maintaining the vacuum previously applied through the previous set of vacuum channels. With this arrangement of vacuum channels and the sequential application of vacuum through the respective sets of vacuum channels 212, 214, 216, 218, and 220, the semiconductor die SD can be "peeled" from the mounting film 102 from one side of the semiconductor die SD to the opposite side. The close proximity of the vacuum forces sequentially applied through the sets of vacuum channels 212, 214, 216, 218, and 220 may serve to minimize stress between adjacent portions of semiconductor die SD and, thus, minimize the likelihood of cracking or micro-cracking. It is contemplated that instead of linearly arranged sets of multiple vacuum channels, linear slit vacuum channels may be employed in the pick-up face 222 to apply vacuum to a target portion of a semiconductor die. Thus, the term "group" of vacuum channels refers to and encompasses a single channel, or a smaller number of channels (e.g., a plurality of slits), for applying a vacuum over a surface area substantially equal to the surface area to which the plurality of smaller channels open.

In one implementation, it is contemplated that multiple stages of ejectors 120 as previously described with respect to fig. 3 may be utilized to enhance the movement of portions of mounting film 102 toward the pickup face 222 of the pickup 210. However, it is also contemplated that instead of multi-stage ejectors 120 employing outer, intermediate and central ejector members, and referring to fig. 5 and 5B, multi-stage ejectors 130 may be configured with the same number of linear ejector blade members 132, 134, 136, 138, 140 as vacuum channel sets 212, 214, 216, 218, 220 and with corresponding lateral dimensions. Each blade member 132, 134, 136, 138, 140 is parallel to and may be vertically and laterally aligned with the linear set of vacuum channels 212, 214, 216, 218, and 220 leading to the pick-up face 222 for picking up the target semiconductor die SD. With this arrangement, the controller of the pick and place device 200 can be programmed to: each blade member 132, 134, 136, 138, 140 is caused to extend upwardly against the mounting film 102 by a separate driver D while enabling its aligned sets of vacuum channels 212, 214, 216, 218 and 220 to facilitate release and peeling of the semiconductor die SD from adjacent portions of the mounting film 102. In other words, when vacuum channel 212 is enabled, blade member 132 extends upwardly so that the first linear portion of semiconductor die SD contacts a portion of pick-up face 222 of picker 210 in which vacuum channel 212 is located. Subsequently, when vacuum channel 214 is activated, blade member 134 extends upward while vacuum channel 212 continues to be activated and blade member 132 is retracted. Alternatively, each successive blade member 132, 134, 136, 138, 140 may extend slightly more than the previous blade member while the pickers 210 have equal vertical lift distances to facilitate peeling of the target semiconductor die SD. This sequence of simultaneous activation of the vacuum channels and blade members continues until the semiconductor die SD is completely peeled off from the mounting film 102.

In other implementations of the foregoing method, it is contemplated that the blade members 132, 134, 136, 138, 140 of the different stages of the multi-stage ejector 130 may be sequentially extended prior to application of vacuum to the picking surface 222 of the picker 210, or vacuum may be sequentially applied through some or all of the sets of vacuum channels 212, 214, 216, 218, 220 prior to activation of the multi-stage ejector 130.

In some implementations of embodiments of the present disclosure, it is further contemplated that the vacuum applied through the vacuum channels 212, 214, 216, 218, 220 may be pulsed on and off rapidly, sequentially, and intermittently for a brief period of time to further facilitate release of the target semiconductor die SD from the adhesive 104 by subsequently applying the vacuum. Additionally, the vacuum channels 212, 214, 216, 218, 220 may be intermittently pulsed by the controller at the direction of vacuum and positive air pressure to unclamp the target semiconductor die SD prior to the subsequent application of vacuum. Thus, the term "vacuum source" as used herein refers to and encompasses not only devices configured to supply a vacuum, but optionally also devices configured to supply a positive air pressure to the respective sets of vacuum channels 212, 214, 216, 218, 220. It is also contemplated that the ejector blade members 132, 134, 136, 138, 140 of the multi-stage ejector 130 may be similarly sequentially pulsed upwardly and downwardly while the vacuum applied through the peripheral vacuum slots 122 maintains the mounting film 102 on the multi-stage ejector 120 in order to release the target semiconductor die SD.

Although embodiments of the present disclosure have been described in connection with the use of several multi-stage ejectors, they are not so limited. For example, a single stage ejector having a single ejector member, or a single stage ejector having multiple ejector members located near the four corners of the target semiconductor die SD may be employed. Additionally, as will be described further below, the use of any type of ejector may not be required or desired.

Referring now to fig. 6 of the drawings, a pick and place apparatus 300 according to an embodiment of the present disclosure is shown in schematic form. As shown, the apparatus 300 includes a pickup 302 carried at a distal end of a pickup arm 304 operable to be moved in X, Y and Z translational directions and rotated about X, Y and Z axes by a drive motor 306. The picker 302 includes a plurality of vacuum channels 308 extending to a pickface 310, the number and arrangement of vacuum channels being as previously shown and described with respect to the embodiments of figures 3, 3A and 3B or figures 5 and 5A. The vacuum channels 308 are selectively enabled by a control valve 312 in a vacuum line 314, the vacuum line 314 leading to one or more vacuum sources 316. The control valve 312 and drive motor 306 are activated and deactivated by a controller 318, the controller 318 including one or more microprocessors 320, the microprocessors 320 having associated memory 322 storing software programmed with an operating recipe for the apparatus 300.

The apparatus 300 further includes a stage 330 for supporting a mounting film 332 on a film frame 334, the mounting film 332 having affixed thereto an array of singulated, laterally spaced apart semiconductor dies SD provided for pick up with the pick-up 302 and subsequent transfer to another location, such as a thermocompression bonding apparatus bonding head for stacking on a wafer or on one or more other semiconductor dies SD. The table 330 may also support an ejector 336, which ejector 336 may be positioned in alignment with the picker 302 and operable by the controller 318 in conjunction with the picker 302 to facilitate removal of the semiconductor die SD from the mounting film 332, as previously described. As known to those of ordinary skill in the art, the picker 302 and ejector 336 may be provided for each pick that is aligned with one another in position as the film frame 334 moves laterally (i.e., in the X-Y plane) on the table 330 to present individual semiconductor dies SD to be picked. Alternatively, the film frame 334 may remain stationary on the table 330 and the picker 302 and ejector 336 may move laterally in unison (i.e., in the X-Y plane) for picking up the various semiconductor dies SD. As described above, any type of ejector may be employed as ejector 336, or ejector 336 may be omitted in some embodiments.

In another implementation, instead of presenting the semiconductor die on a mounting film for pick-up, it is contemplated that the semiconductor die may be presented on a carrier wafer or other substantially rigid substrate of electromagnetic-energy transmissive material (e.g., glass) to which the die is adhered with a UV-sensitive or heat-sensitive adhesive. In such implementations, when the pickup is suspended above and extends down into close proximity to the target semiconductor die, an energy source (e.g., a laser having a suitable wavelength and sufficient power) is activated to direct an energy beam (e.g., a laser beam) from the underside of the carrier wafer and through the carrier wafer to reduce adhesion of the adhesive to the target semiconductor die. Simultaneously with the release of the adhesive, one or more sets of vacuum channels to the pickup face of the pickup are activated in a sequence corresponding to the programmed recipe, and as described above in various embodiments, to achieve relatively stress-free removal of the target die from the carrier wafer.

Referring now to fig. 7, an operational sequence 400 of a pick and place apparatus according to an embodiment of the disclosure is described. In act 402, a pickup is positioned over a target semiconductor die on a support structure. In act 404, the pick-up is lowered into close proximity to the target semiconductor die and a first set of vacuum channels to the pick-up face of the pick-up are activated to initiate a vacuum and pull the first surface portion of the target semiconductor die toward the pick-up face. In act 406, at least another set of vacuum channels is enabled to initiate a vacuum and pull a second portion of the target semiconductor die toward the pick-up surface while maintaining the vacuum of the first set of vacuum channels. In optional act 408, one or more other sets of vacuum channels are enabled to initiate a vacuum and pull other portions of the target semiconductor die toward the pick-up surface while maintaining the vacuum of the previous set of vacuum channels. In optional act 410, an ejector having one or more ejector members is enabled to move upward to contact a support structure in the form of a mounting film beneath a target semiconductor die, thereby facilitating removal of the target semiconductor die from the mounting film by a picker. In optional act 412, the ejector includes one or more ejector members that sequentially move upward against the mounting film as the vacuum is applied by the picking surface of the picker. In optional act 414, the ejector member is configured and positioned to align with each respective set of vacuum channels and extend upwardly against the mounting membrane while activating the associated set of vacuum channels.

Embodiments of the present disclosure include an apparatus for picking a singulated microelectronic component from a support structure, the apparatus comprising a picker carried at a distal end of a picker arm, the picker comprising at least two vacuum channels leading to different portions of a pick face. At least one vacuum source is in selective communication with the at least two vacuum channels, and the controller is programmed to separately initiate communication between the at least one vacuum source and at least one of the at least two vacuum channels at a time, and initiate communication between the at least one vacuum source and at least another of the at least two vacuum channels at a subsequent time.

Embodiments of the present disclosure include a method for removing a singulated microelectronic component from a support, the method comprising: the singulated microelectronic components, now laterally separated from each other, are adhered to the upper surface of the support structure; positioning a pick head over and in close proximity to a target singulated microelectronic component; activating a vacuum through a set of vacuum channels leading to a pickup face of the pickup head over a portion of the target singulated microelectronic element; and subsequently activating vacuum through one or more other sets of vacuum channels leading to the pickface of the pickhead over one or more other portions of the target singulated microelectronic component.

As used herein, the terms "comprising," "including," "containing," "characterized by," and grammatical equivalents thereof are inclusive or open-ended terms that do not exclude additional, unrecited elements or method acts, and also include the more limiting terms "consisting of … …" and "consisting essentially of … …," and grammatical equivalents thereof. As used herein, the term "may" with respect to materials, structures, features, or method acts indicates that such terms are intended to be used in implementing an embodiment of the disclosure, and such terms are used in preference to the more limiting term "is" in order to avoid any implication that other compatible materials, structures, features, and methods may be used in combination therewith, or must be excluded.

As used herein, the terms "longitudinal," "vertical," "lateral," and "horizontal" refer to a major plane of a substrate (e.g., base material, base structure, base construction, etc.) in or on which one or more structures and/or features formed are not necessarily defined by the earth's gravitational field. A "lateral" or "horizontal" direction is a direction substantially parallel to the major plane of the substrate, and a "longitudinal" or "vertical" direction is a direction substantially perpendicular to the major plane of the substrate. The main plane of the substrate is defined by the surface of the substrate having a relatively large area compared to the other surfaces of the substrate.

As used herein, spatially relative terms, such as "below," "lower," "bottom," "above," "upper," "top," "front," "back," "left," "right," and the like, may be used for ease of description to describe one element or feature's relationship to another element or feature as illustrated. Unless otherwise indicated, spatially relative terms are intended to encompass different orientations of the material in addition to the orientation depicted in the figures. For example, if the materials in the figures are inverted, elements described as "above" or "over" or "on top of" other elements or features would then be oriented "below" or "beneath" or "on bottom of the other elements or features. Thus, the term "above" may encompass directions above and below, depending on the context in which the term is used, as will be apparent to those of ordinary skill in the art. The material may be otherwise oriented (e.g., rotated 90 degrees, inverted, flipped) and the spatially relative descriptors used herein interpreted accordingly.

As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

As used herein, the terms "configured" and "configuration" refer to a size, shape, material composition, orientation, and arrangement of one or more of at least one structure and at least one device that facilitates operation of the one or more structures and devices in a predetermined manner.

As used herein, the term "substantially" with respect to a given parameter, property, or condition refers to and encompasses the extent to which the given parameter, property, or condition is satisfied with a degree of variation (such as within acceptable manufacturing tolerances) as would be understood by one of ordinary skill in the art. For example, depending on the particular parameter, property, or condition being substantially met, the parameter, property, or condition may be met by at least 90.0%, met by at least 95.0%, met by at least 99.0%, or even met by at least 99.9%.

As used herein, "about" or "approximately" with respect to a value for a particular parameter includes the value and the degree of variance of the value within an acceptable tolerance for the particular parameter as would be understood by one of ordinary skill in the art. For example, "about" or "approximately" with respect to a numerical value may include additional numerical values in the range of 90.0% to 110.0% of the numerical value, such as in the range of 95.0% to 105.0% of the numerical value, in the range of 97.5% to 102.5% of the numerical value, in the range of 99.0% to 101.0% of the numerical value, in the range of 99.5% to 100.5% of the numerical value, or in the range of 99.9% to 100.1% of the numerical value.

As used herein, the terms "layer" and "film" refer to and encompass a layer, sheet, or coating of material present on a structure, which layer or coating may be continuous or discontinuous between portions of material, and may be conformal or non-conformal, unless otherwise specified.

As used herein, "substrate" refers to and encompasses a base material or construction having additional materials formed thereon. The substrate may be a semiconductor substrate, a base semiconductor layer on a support structure, a metal electrode, or a semiconductor substrate having one or more materials, layers, structures, or regions formed thereon. The material on the semiconductor substrate may include, but is not limited to, a semiconductor material, an insulating material, a conductive material, and the like. The substrate may be a conventional silicon substrate or other bulk substrate comprising a layer of semiconductor material. As used herein, the term "bulk substrate" refers to and encompasses not only silicon wafers, but also silicon-on-insulator ("SOI") substrates, such as silicon-on-sapphire ("SOS") substrates and silicon-on-glass ("SOG") substrates, epitaxial layers of silicon on a base semiconductor foundation, and other semiconductor or optoelectronic materials such as silicon-germanium, gallium arsenide, gallium nitride, and indium phosphide. The substrate may be doped or undoped.

As used herein, the term "may" with respect to materials, structures, features, or method acts indicates that such terms are intended to be used in implementing embodiments of the present disclosure, and such terms are used in preference to the more limiting term "is" in order to avoid any implications that other compatible materials, structures, features, and methods may be used in combination therewith, or must be excluded.

As used herein, the term "microelectronic component" refers to and includes, as non-limiting examples, semiconductor dies, dies that exhibit functionality through activities other than semiconductor activities, microelectromechanical systems (MEM) devices, substrates including a plurality of dies including conventional wafers, as well as other bulk substrates as described above, as well as portions of wafers and substrates including more than one die location.

While certain illustrative embodiments have been described in connection with the accompanying drawings, those skilled in the art will recognize and appreciate that the embodiments encompassed by the present disclosure are not limited to those explicitly shown and described herein. Rather, many additions, deletions, and modifications to the embodiments described herein, such as those hereinafter claimed, include legal equivalents, without departing from the scope of the embodiments encompassed by the present disclosure. In addition, features from one disclosed embodiment may be combined with features of another disclosed embodiment while still being encompassed within the scope of the disclosure.

Claims (24)

1. An apparatus for picking up singulated microelectronic components from a support structure, comprising:

a picker carried at a distal end of the picker arm;

the picker includes at least two vacuum channels leading to different portions of the picking surface;

at least one vacuum source in selective communication with the at least two vacuum channels; and

a controller programmed to initiate communication between the at least one vacuum source and at least one of the at least two vacuum channels, respectively, at a time, and to initiate communication between the at least one vacuum source and at least another of the at least two vacuum channels at a subsequent time.

2. The apparatus of claim 1, wherein the controller is programmed to: maintaining communication between the at least one vacuum source and the at least one of the at least two channels at and after the subsequent time when communication with the at least another of the at least two vacuum channels begins.

3. The apparatus of claim 1 or claim 2, wherein the at least one of the at least two vacuum channels comprises a first set of vacuum channels and the at least another of the at least two vacuum channels comprises a second set of vacuum channels.

4. The apparatus of claim 3, wherein the first set of vacuum channels is located in a central region of the pickup face and the second set of vacuum channels is located in a peripheral region of the pickup face within a dimensional footprint of the singulated microelectronic components to be picked.

5. The apparatus of claim 4, wherein the controller is programmed to: initiating communication between the at least one vacuum source and the second set of vacuum channels and subsequently initiating communication between the at least one vacuum source and the first set of vacuum channels when the pickface is positioned over and proximate to a microelectronic component to be picked.

6. The apparatus of claim 5, wherein the support structure includes a mounting film mounted to a film frame and to which the singulated microelectronic components are adhered, the apparatus further comprising a table supporting the film frame and an ejector located below the mounting film, the ejector being alignable with the picker and a target singulated microelectronic component to be picked from the mounting film, the controller programmed to: initiating upward movement of at least one ejector member against the mounting membrane substantially simultaneously with initiating communication between the at least one vacuum source and the second set of vacuum channels.

7. The apparatus of claim 6, wherein the ejector is configured as a multi-stage ejector having a plurality of ejector members, and the controller is programmed to initiate sequential upward movement of the plurality of ejector members against the mounting film.

8. The apparatus of claim 7, wherein the plurality of ejector members are arranged concentrically, the sequential upward movement is initiated first by an outermost ejector member, and each ejector member that is inward of the outermost ejector member moves upward to a greater extent than an outward adjacent ejector member.

9. The apparatus of claim 6 wherein the ejector further includes at least one vacuum channel peripherally surrounding the at least one ejector member and laterally outside a dimensional footprint of the singulated microelectronic component to be picked, and the controller is programmed to initiate communication between the at least one vacuum source and the at least one peripheral vacuum channel prior to initiating communication between the at least one vacuum source and the second set of vacuum channels of the picking face.

10. The apparatus according to claim 1 wherein the at least two vacuum channels comprise three or more sets of vacuum channels, each set extending linearly across the pickface parallel to the other sets, and the controller is programmed to initiate communication between the at least one vacuum source and at least a third set in sequence from a first set of vacuum channels adjacent a lateral edge of the pickface to an opposite lateral edge of the pickface.

11. The apparatus of claim 10, wherein the three or more sets of vacuum channels comprise five or more sets of vacuum channels.

12. The apparatus of claim 10 or claim 11, wherein the support structure includes a mounting film mounted to a film frame and to which the singulated microelectronic components are adhered, the apparatus further comprising a table supporting the film frame and an ejector located below the mounting film, the ejector being alignable with the picker and a target singulated microelectronic component to be picked from the mounting film, the controller programmed to: initiating upward movement of at least one ejector member against the mounting film substantially simultaneously with initiating communication between the at least one vacuum source and the first set of vacuum channels.

13. The apparatus of claim 12, wherein the ejector is configured as a multi-stage ejector having a plurality of ejector members, and the controller is programmed to: initiating sequential upward movement of the plurality of ejector members against the mounting film substantially simultaneously with respective sequential initiation of communication between the at least one vacuum source and each set of vacuum channels.

14. The apparatus of claim 13, wherein the plurality of ejector members are configured as mutually parallel blade members equal in number to the groups of vacuum channels, and the controller is programmed to: initiating sequential upward movement of each blade member concurrently with the initiating of communication between the at least one vacuum source and a set of vacuum channels on the pickface aligned with each blade member.

15. The apparatus of claim 12 wherein the ejector further includes at least one peripheral vacuum channel surrounding the at least one ejector member and laterally outside of a dimensional footprint of the singulated microelectronic components to be picked, and the controller is programmed to initiate communication between the at least one vacuum source and the at least one peripheral vacuum channel prior to initiating communication between the at least one vacuum source and any set of vacuum channels of the picking surface.

16. The apparatus of claim 1, wherein the support structure comprises a substantially rigid substrate, the substantially rigid substrate including an electromagnetic energy transmissive material, the singulated microelectronic components being adhered to the electromagnetic energy transmissive material with a UV-sensitive or heat-sensitive adhesive, the apparatus further includes a stage supporting the substantially rigid substrate and an energy source having a suitable wavelength and sufficient power, such that an energy beam impinges on the adhesive through the underside of the substantially rigid substrate beneath the targeted singulated microelectronic component, and reducing adhesion of the adhesive to the target singulated microelectronic component substantially while activating one or more sets of vacuum channels to the pickup face of the pickup aligned above the target singulated microelectronic component.

17. The apparatus of claim 16, wherein the energy source comprises a laser and the beam comprises a laser beam and the substantially rigid substrate comprises a semiconductor material or glass.

18. A method for removing a singulated microelectronic component from a support structure, the method comprising:

the singulated microelectronic components, now laterally separated from each other, are adhered to the upper surface of the support structure;

positioning a pick-up head over and in close proximity to a target singulated microelectronic component;

activating a vacuum through a set of vacuum channels leading to a pickup face of the pickup head over a portion of the target singulated microelectronic component; and

vacuum is then enabled through one or more other sets of vacuum channels to the pickup face of the pickup head over one or more other portions of the target singulated microelectronic component.

19. The method of claim 18, wherein:

activating vacuum through a set of vacuum channels to a pickup face of the pickup head over a portion of the target singulated microelectronic component comprises: activating a vacuum through a set of vacuum channels to the pickup face over a peripheral portion of the target singulated microelectronic component; and

subsequently enabling vacuum through one or more other sets of vacuum channels to a pickup face of the pickup head over at least another portion of the target singulated microelectronic component comprises: activating a vacuum through at least another set of vacuum channels leading to the pickup face over the central portion of the target singulated microelectronic component.

20. The method of claim 18, wherein:

activating vacuum through a set of vacuum channels to a pickup face of the pickup head over a portion of the target singulated microelectronic component comprises: activating vacuum through a first linear set of vacuum channels to the pickup face over an aligned portion of the target singulated microelectronic component adjacent a lateral edge thereof; and

subsequently enabling vacuum through one or more other sets of vacuum channels to a pickup face of the pickup head over at least another portion of the target singulated microelectronic component comprises: vacuum is enabled sequentially through two or more other linear, mutually parallel sets of parallel vacuum channels parallel to the first linear set and open to the pickup face over respective aligned portions of the target singulated microelectronic component.

21. The method of any one of claims 18, 19 or 20, wherein the support structure is a mounting membrane carried on a membrane frame, and the method further comprises: extending at least one ejector member in a direction under the target singulated microelectronic component into contact with the mounting film substantially while vacuum is enabled through a set of vacuum channels leading to a pickup face of the pickup head over a portion of the target singulated microelectronic component.

22. The method of claim 21, further comprising: prior to extending the at least one ejector member under the target singulated microelectronic component, drawing the mounting film toward the ejector member with a vacuum applied to an underside of the mounting film at a periphery of the target singulated microelectronic component.

23. The method of claim 21, further comprising: one or more additional ejector members are sequentially extended into contact with the mounting film under the target singulated microelectronic component while the vacuum is enabled through at least another set of vacuum channels.

24. The method of any of claims 18, 19 or 20, wherein the support structure comprises a substantially rigid substrate comprising an electromagnetic-energy-transmissive material, the singulated microelectronic components being adhered to the electromagnetic-energy-transmissive material with a UV-sensitive or heat-sensitive adhesive, the method further comprising: impinging an energy beam of appropriate wavelength and sufficient power through an underside of the substantially rigid substrate beneath the target singulated microelectronic component onto the adhesive substantially while activating one or more sets of vacuum channels to the pickup face of the pickup aligned above the target singulated microelectronic component to reduce adhesion of the adhesive to the target singulated microelectronic component substantially while activating one or more sets of vacuum channels to the pickup face of the pickup.

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