CN118070731A - Three-dimensional full-wave finite element simulation method for GIS internal extremely fast transient process - Google Patents
Three-dimensional full-wave finite element simulation method for GIS internal extremely fast transient process Download PDFInfo
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Abstract
The invention provides a three-dimensional full-wave finite element simulation method for a very fast transient process in a GIS, and relates to the technical field of digital twin of power equipment. The method comprises the following steps: s1: constructing a three-dimensional geometric model of a GIS and setting simulation basic parameters, wherein the method comprises the following steps: adding an additional section of bus; s2: setting a load side bus precharge process, comprising: setting 2 lumped ports in the simulation model; s3: setting the conductivity, comprising: the conductivity of the area between the load side additional bus and the load side bus is changed from high to low, and the conductivity of the area between the power side bus and the load side bus is changed from low to high; s4: and running simulation. The method can apply the three-dimensional full-wave finite element simulation method to the simulation of the ultra-fast transient process, acquire the distribution condition of the electric field in the GIS in the ultra-fast transient process, and is beneficial to analyzing the insulation reliability and improving the GIS insulation design.
Description
Technical Field
The invention relates to the technical field of digital twinning of power equipment, in particular to a three-dimensional full-wave finite element simulation method of a very fast transient process in a GIS.
Background
The gas-insulated metal-enclosed switchgear (English name: gas insulated switchgear, abbreviated as GIS) is widely used in power transmission systems due to its high reliability and compact structure. When the isolating switch of the GIS operates, breakdown between contacts causes transient electromagnetic waves to be generated, and the electromagnetic waves are reflected in the GIS and adjacent equipment at the discontinuous position of the wave impedance to form a very fast transient process (English name: VERY FAST TRANSIENT, VFT for short). The amplitude and steepness of the corresponding ultra-fast transient overvoltage (VFTO) in the ultra-fast transient process are high, and threat is brought to the insulation of the GIS and the insulation of adjacent equipment.
The traditional research means of the VFT is an experiment, and in recent years, the simulation means are beginning to be applied to the VFT research due to the characteristics of comprehensive data, low cost, easy operation and the like. The VFT simulation based on the electromagnetic transient program EMTP is studied in a large amount at home and abroad, but because the EMTP simulation can only acquire voltage and current data of part of key nodes, the geometric structure and the electric field distribution condition of a GIS are ignored, and the application significance to scenes such as insulation analysis is low. Correspondingly, the three-dimensional full-wave finite element method can completely simulate the electric field distribution in the GIS, and is a more comprehensive and more effective analysis means. However, at present, the method for realizing the full-process simulation of the VFT by a three-dimensional full-wave finite element method is still unclear.
Disclosure of Invention
The invention aims to provide a three-dimensional full-wave finite element simulation method for a very fast transient process in a GIS, which can be applied to the simulation of the very fast transient process to acquire the distribution condition of an electric field in the GIS in the very fast transient process, thereby being beneficial to analyzing the insulation reliability and improving the insulation design of the GIS.
Embodiments of the invention may be implemented as follows:
the invention provides a three-dimensional full-wave finite element simulation method of a very fast transient process in a GIS, which comprises the following steps:
S1: constructing a three-dimensional geometric model of a GIS and setting simulation basic parameters, wherein the method comprises the following steps: according to the actual structure of the GIS, a three-dimensional geometric model is established for simulation, an additional bus is added, a physical field is added, boundary conditions are set, the set basic parameters comprise structural parameters and material parameters, and grids are split;
s2: setting a load side bus precharge process, comprising: setting 2 lumped ports in the simulation model, and setting the positions, characteristic impedance and voltage parameters of the lumped ports to enable the bus to be charged to the voltage before breakdown;
S3: setting the conductivity, comprising: the disconnection between the load side additional bus and the load side bus is realized by setting the change of the area conductivity between the load side additional bus and the load side bus from high to low, so that the load side bus is an empty short bus with residual voltage; the electric conductivity of the area between the power side bus and the load side bus is changed from low to high, so that breakdown conduction between the power side bus and the load side bus is realized, and a very fast transient process is formed;
s4: running a simulation, comprising: after the setting is finished, running simulation and recording data.
In an alternative embodiment, in S1, the added additional bus bar is: and adding a section of coaxial bus with the same structure and the length of 0.2m in the direction of the load side bus away from the fracture for the subsequent pre-charging process.
In an alternative embodiment, in S1, the added physical field is a transient electromagnetic wave; the wave equation is set as: default settings; the ideal electrical conductor is set as follows: adding a metal part on the basis of default settings; the metal part includes: the bus center conductor, the shell, the moving contact, the fixed contact and the shielding cover; the initial value is set as follows: default settings.
In an alternative embodiment, in S1, the mesh dissection area is: all parts of the model except the metal part are used as the grid type: and a free tetrahedral mesh, wherein for the air area inside the model, finer subdivision is adopted, and for the rest areas to be subdivided, finer subdivision is adopted.
In an alternative embodiment, in S2, the lumped port 1 is located at the end of the power source side bus bar away from the break and is located at the cross section of the SF 6 gas region between the center conductor and the housing, and the lumped port 2 is located at the end of the additional bus bar away from the break and is located at the cross section of the SF 6 gas region between the center conductor and the housing.
In an alternative embodiment, in S2, the characteristic impedance of the lumped port 1 is an overhead line characteristic impedance value connected to the power source side bus in actual engineering, and the characteristic impedance of the lumped port 2 is 300 Ω.
In an alternative embodiment, in S2, the voltage u s (t) of the lumped port 1 is set as a generalized Sigmoid function, which takes the form:
；(1)
Wherein V S represents the generalized Sigmoid function amplitude, t represents the simulation time, and p S and q S are the shape parameters of the functions;
The voltage u L (t) of the lumped port 2 is set as a generalized Sigmoid function in the form:
；(3)
Where V L represents the generalized Sigmoid function magnitude, t represents the simulation time, and p L and q L are the shape parameters of the function.
In an alternative embodiment, in S2, V S is set to 1/2 of the instantaneous value of the mains frequency voltage before the mains breakdown, V L is set to 1/2 of the residual voltage on the load side, and p S、pL is taken as 729.
In an alternative embodiment, in S2, q S is calculated according to the following formula in S2:
；(2)
Wherein, l S represents the length of the power supply side bus bar;
q L is calculated according to the following formula:
；(4)
Where l L denotes the load side busbar length.
In an optional implementation manner, in S3, the simulation model is set with positions A, B, C, F, G, H in sequence, the AB section is a power supply side bus, the CF section is a load side bus, and the GH section is a load side additional bus;
Setting the conductivity S FG of the FG segment as follows:
；(5)
The conductivity function gradually drops from 14 to 0 from the time t 1, and the disconnection process of the CF segment and the GH segment is simulated after the CF segment and the GH segment are charged to a steady state;
Setting the conductivity S BC of the BC segment as follows:
；(6)
The conductivity function gradually rises from 0 to 14 from time t 2, and the fracture breakdown arcing process in practical conditions is simulated by using the conductivity function.
The three-dimensional full-wave finite element simulation method for the GIS internal ultra-fast transient process provided by the embodiment of the invention has the beneficial effects that:
The method overcomes the defects that the traditional EMTP simulation method can only acquire partial node voltage data, cannot acquire electric field data and the like. The embodiment of the invention closely combines the geometric structure of the GIS, accurately analyzes the distribution condition of the electric field in the whole space inside the GIS in the whole process of the ultra-fast transient state, and analyzes the potential insulation defect, thereby effectively guiding the structural design of the GIS. By the simulation method, certain help is provided for preventing the GIS from generating insulation breakdown faults in the operation process and improving the reliability of the power transmission network.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a three-dimensional full-wave finite element simulation method of a GIS internal ultra-fast transient process provided by an embodiment of the invention;
FIG. 2 is a simplified simulation model for illustrating a simulation flow;
Fig. 3 is a comparison of simulated measured very fast transient overvoltage waveforms with voltage waveforms measured in actual experiments.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Referring to fig. 1, the present embodiment provides a three-dimensional full-wave finite element simulation method (hereinafter referred to as "method") of a very fast transient process in a GIS, the method includes the following steps:
S1: and constructing a three-dimensional geometric model of the GIS, and setting simulation basic parameters.
Specifically, according to the actual structure of the GIS, a three-dimensional geometric model is established for simulation, an additional bus is added, a physical field is added, boundary conditions are set, the set basic parameters comprise structural parameters and material parameters, and grids are split.
The added additional bus bars are: and adding a section of coaxial bus with the same structure and the length of 0.2m in the direction of the load side bus away from the fracture for the subsequent pre-charging process.
The added physical field is transient electromagnetic wave; the wave equation is specifically set as: default settings; the ideal electrical conductor is specifically set as follows: adding a metal part on the basis of default settings; the metal part specifically comprises: the bus center conductor, the shell, the moving contact, the fixed contact and the shielding cover; the initial value is specifically set as follows: default settings. The mesh dissection area is: all parts of the model except the metal part are used as the grid type: and a free tetrahedral mesh, wherein for the air area inside the model, finer subdivision is adopted, and for the rest areas to be subdivided, finer subdivision is adopted.
S2: a load side bus precharge process is set.
The simplified simulation model for explaining the simulation flow in this embodiment is shown in fig. 2, where the AB segment is a power source side bus, the CF segment is a load side bus, and the GH segment is a load side additional bus. In order to realize accurate simulation of the ultra-fast transient process, the two side buses are required to be respectively charged to voltages of the two side buses before actual breakdown, specifically, the power supply side buses are charged to the instantaneous value of the power frequency voltage before breakdown, and the load side buses are charged to the residual voltage. In three-dimensional finite element simulation, this step is achieved by setting the boundary conditions of the lumped ports. Specifically, before the simulation starts, in fig. 2, the cross section of the SF 6 gas region between the a-position center conductor and the housing is set as a lumped port 1, the characteristic impedance is set as the characteristic impedance value of the overhead line connected to the power supply side bus in actual engineering, and the voltage is set as a generalized Sigmoid function, and the specific form is as follows:
；(1)
Where V S represents the generalized Sigmoid function magnitude, t represents the simulation time, and p S and q S are the shape parameters of the function. In this embodiment, V S is set to 1/2 of the instantaneous value of the power frequency voltage before power side breakdown, p S is taken as 729, and q S is calculated according to the following formula:
；(2)
where l S denotes the power supply side bus bar length.
Subsequently, the cross section of the SF 6 gas region between the H-position center conductor and the housing was set as lumped port 2, its characteristic impedance was set as 300 Ω, and its voltage was also set as a generalized Sigmoid function, in the following specific form:
；(3)
Where V L represents the generalized Sigmoid function magnitude, t represents the simulation time, and p L and q L are the shape parameters of the function. In the present embodiment, V L is set to 1/2 of the load side residual voltage, p L is taken as 729, and q L is calculated according to the following formula:
；(4)
Where l L denotes the load side busbar length.
S3: setting the conductivity.
Specifically, the conductivity S FG of the FG segment is set as:
；(5)
The conductivity function gradually decreases from 14 to 0 from time t 1, and the disconnection process of the CF segment and the GH segment after the CF segment and the GH segment are charged to a steady state is simulated by using the conductivity function.
Setting the conductivity S BC of the BC segment as follows:
；(6)
The conductivity function gradually rises from 0 to 14 from time t 2, and the fracture breakdown arcing process in practical conditions is simulated by using the conductivity function. The disconnection between the CF section and the GH section is realized by setting the change of the conductivity S FG of the FG section from high to low, so that the CF section becomes an empty-load short bus with residual voltage, and the empty-load short bus accords with an actual extremely rapid transient process. By setting the change of the conductivity S BC of the BC segment from low to high, the actual arc burning process is simulated, and the breakdown conduction between the AB segment and the CF segment is realized, so that transient electromagnetic waves are generated, and the electromagnetic waves propagate in the model structure after the breakdown, so that a very fast transient process is formed.
S4: and running simulation.
Specifically, after the setting is completed, running simulation, gradually increasing the voltages of the power supply side bus and the load side bus, and when the voltages at the two sides are respectively charged to the instantaneous value and the residual voltage of the power frequency voltage before breakdown at the time of t 1, ending the pre-charging process.
Beginning at time t 1, the conductivity S FG of the FG segment gradually decreases to approximately 0, and the FG segment becomes insulating at time t 2.
Wherein, since the voltages of the load side bus bar and the load side additional bus bar are equal at time t 1, the change of the conductivity S FG of the FG segment does not cause the change of the electric potentials of the load side bus bar and the load side additional bus bar. After the FG section is changed into an insulating state, the BC section and the FG section at two sides of the load side bus are in an open circuit state, and become an empty-load short bus, and the situation of the load side bus is consistent with that of the actual load side bus before the ultra-fast transient generation. Beginning at time t 1, the conductivity of segment BC, S BC, rises from 0, indicating initiation of arcing, and then rises to approximately 14S/m, no longer significantly changing, indicating stable arc combustion. Because the conductivity S BC of the BC segment rises very fast, the voltages of the power supply side bus and the load side bus are different, so that the electric charges are neutralized, the voltage is rapidly changed to generate electromagnetic waves, and the propagation of the electromagnetic waves forms a very fast transient process. Therefore, three-dimensional full-wave finite element simulation of a very fast transient process is realized, and required data is recorded.
Examples
Embodiments of the present invention will be described in detail below, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout the embodiments. The following examples are illustrative of the invention and are intended to be disclosed, but are not to be construed as limiting the invention.
Step 1: and constructing a three-dimensional geometric model of the GIS, and setting simulation basic parameters.
The operation of step 1 is the same as that of step S1, and will not be described here again.
Step 2: a load side bus precharge process is set.
Specifically, table 1 below is parameters of the GIS in the case, and a simulation model is set according to the parameters of the GIS in table 1.
Table 1 parameters of GIS in case
| Power frequency voltage instantaneous value at power supply side | +494kV |
| Length of power supply side bus bar | 13.047m |
| Load side residual voltage | -492kV |
| Load side bus length | 4.865m |
As calculated, the power supply side bus voltage u s (t) should be set to:
；(7)
the load side bus voltage u L (t) should be set to:
；(8)
The section A of the SF 6 gas area between the central conductor and the shell is set as a lumped port 1, the section H of the SF 6 gas area between the central conductor and the shell is set as a lumped port 2, the characteristic impedance of the lumped port 1 and the lumped port 2 is 300 omega, and the voltages are respectively set according to formulas (7) and (8).
Step 3: setting the conductivity.
Specifically, as shown in formulas (5) and (6), the conductivities of the FG segment and the BC segment are set.
Step 4: and running simulation.
Running simulation, the voltage of the power supply side bus and the voltage of the load side bus are gradually increased, and when t 1 = 1150ns, the precharge process is ended. t 1 = 1150ns, the FG segment changes from a conductive state to an insulating state. When t 2 =1200ns, the FG segment becomes an insulated state, and the load side bus becomes an empty short bus. And t 2 = 1200ns, the BC segment is changed from an insulating state to a conductive state, a very fast transient process is correspondingly generated, and data are recorded after simulation is completed. The pair of measured very fast transient overvoltage waveforms and actual experimental measured voltage waveforms is simulated as shown in fig. 3.
The three-dimensional full-wave finite element simulation method for the GIS internal ultra-fast transient process provided by the embodiment of the invention has the beneficial effects that:
The method overcomes the defects that the traditional EMTP simulation method can only acquire partial node voltage data, cannot acquire electric field data and the like. The embodiment of the invention closely combines the geometric structure of the GIS, accurately analyzes the distribution condition of the electric field in the whole space inside the GIS in the whole process of the ultra-fast transient state, and analyzes the potential insulation defect, thereby effectively guiding the structural design of the GIS. By the simulation method, certain help is provided for preventing the GIS from generating insulation breakdown faults in the operation process and improving the reliability of the power transmission network.
The present invention is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (10)
1. A three-dimensional full-wave finite element simulation method for a very fast transient process in a GIS is characterized by comprising the following steps:
S1: constructing a three-dimensional geometric model of a GIS and setting simulation basic parameters, wherein the method comprises the following steps: according to the actual structure of the GIS, a three-dimensional geometric model is established for simulation, an additional bus is added, a physical field is added, boundary conditions are set, the set basic parameters comprise structural parameters and material parameters, and grids are split;
s2: setting a load side bus precharge process, comprising: setting 2 lumped ports in a simulation model, and setting the positions, characteristic impedance and voltage parameters of the lumped ports to enable the bus to be charged to the voltage before breakdown;
S3: setting the conductivity, comprising: the disconnection between the load side additional bus and the load side bus is realized by setting the change of the area conductivity between the load side additional bus and the load side bus from high to low, so that the load side bus is an empty short bus with residual voltage; the electric conductivity of the area between the power side bus and the load side bus is changed from low to high, so that breakdown conduction between the power side bus and the load side bus is realized, and a very fast transient process is formed;
s4: running a simulation, comprising: after the setting is finished, running simulation and recording data.
2. The three-dimensional full-wave finite element simulation method of the GIS interior very fast transient according to claim 1, wherein in S1, the added additional bus is: and adding a section of coaxial bus with the same structure and the length of 0.2m in the direction of the load side bus away from the fracture for the subsequent pre-charging process.
3. The three-dimensional full-wave finite element simulation method of the GIS internal ultra-fast transient process according to claim 1, wherein in S1, the added physical field is transient electromagnetic wave; the wave equation is set as: default settings; the ideal electrical conductor is set as follows: adding a metal part on the basis of default settings; the metal part includes: the bus center conductor, the shell, the moving contact, the fixed contact and the shielding cover; the initial value is set as follows: default settings.
4. The three-dimensional full-wave finite element simulation method of the GIS interior very fast transient according to claim 1, wherein in S1, the mesh subdivision area is: all parts of the model except the metal part are used as the grid type: and a free tetrahedral mesh, wherein for the air area inside the model, finer subdivision is adopted, and for the rest areas to be subdivided, finer subdivision is adopted.
5. The three-dimensional full-wave finite element simulation method of the GIS interior very fast transient process according to claim 1, wherein in S2, the lumped port 1 is the cross section of SF 6 gas area between the central conductor and the shell at the end of the power source side bus away from the fracture, and the lumped port 2 is the cross section of SF 6 gas area between the central conductor and the shell at the end of the additional bus away from the fracture.
6. The three-dimensional full-wave finite element simulation method of the GIS internal ultra-fast transient process according to claim 1, wherein in S2, the characteristic impedance of the lumped port 1 is an overhead line characteristic impedance value connected with a power supply side bus in actual engineering, and the characteristic impedance of the lumped port 2 is 300 Ω.
7. The three-dimensional full-wave finite element simulation method of the GIS interior very fast transient according to claim 1, wherein in S2, the voltage u s (t) of the lumped port 1 is set as a generalized Sigmoid function in the form:
；(1)
Wherein V S represents the generalized Sigmoid function amplitude, t represents the simulation time, and p S and q S are the shape parameters of the functions;
The voltage u L (t) of the lumped port 2 is set as a generalized Sigmoid function in the form:
；(3)
Where V L represents the generalized Sigmoid function magnitude, t represents the simulation time, and p L and q L are the shape parameters of the function.
8. The three-dimensional full-wave finite element simulation method for the GIS internal very fast transient process according to claim 7, wherein in S2, V S is set to be 1/2 of the power frequency voltage instantaneous value before power supply side breakdown, V L is set to be 1/2 of the load side residual voltage, and p S、pL is 729.
9. The three-dimensional full-wave finite element simulation method of the GIS interior very fast transient according to claim 7, wherein in S2, q S is calculated according to the following formula:
；(2)
Wherein, l S represents the length of the power supply side bus bar;
q L is calculated according to the following formula:
；(4)
Where l L denotes the load side busbar length.
10. The three-dimensional full-wave finite element simulation method for the GIS internal ultra-fast transient process according to claim 1, wherein in the step S3, the positions A, B, C, F, G, H are sequentially arranged in the simulation model, the AB section is a power supply side bus, the CF section is a load side bus, and the GH section is a load side additional bus;
Setting the conductivity S FG of the FG segment as follows:
；(5)
Wherein t represents simulation time, the conductivity function gradually drops from 14 to 0 from the time t 1, and the disconnection process of the CF segment and the GH segment is simulated after the CF segment and the GH segment are charged to a steady state;
Setting the conductivity S BC of the BC segment as follows:
；(6)
The conductivity function gradually rises from 0 to 14 from time t 2, and the fracture breakdown arcing process in practical conditions is simulated by using the conductivity function.
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