CN118053918A - Photovoltaic cell, photovoltaic module and photovoltaic system - Google Patents
Photovoltaic cell, photovoltaic module and photovoltaic system Download PDFInfo
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- CN118053918A CN118053918A CN202410393849.3A CN202410393849A CN118053918A CN 118053918 A CN118053918 A CN 118053918A CN 202410393849 A CN202410393849 A CN 202410393849A CN 118053918 A CN118053918 A CN 118053918A
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- 238000002161 passivation Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052796 boron Inorganic materials 0.000 claims abstract description 53
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 30
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 20
- 230000005641 tunneling Effects 0.000 claims abstract description 19
- 230000005684 electric field Effects 0.000 claims abstract description 12
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 17
- 238000002360 preparation method Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a photovoltaic cell, a photovoltaic module and a photovoltaic system, which relate to the technical field of solar cells and comprise a silicon substrate, an emission passivation structure arranged on the front surface of the silicon substrate, a tunneling electric field passivation structure arranged on the back surface of the silicon substrate, and an electrode assembly, wherein the emission passivation structure is provided with an intrinsic amorphous silicon layer, a boron-doped polycrystalline silicon layer or a boron-doped microcrystalline silicon layer and a front passivation layer; the electrode assembly includes a first electrode connected to the emission passivation structure and a second electrode connected to the tunneling electric field passivation structure. The boron-doped polycrystalline silicon layer or the boron-doped microcrystalline silicon layer is arranged and matched with the boron-doped amorphous silicon layer, so that the boron diffusion layer arranged on the front surface of the silicon substrate of the conventional TOPCon battery is replaced, and the preparation process of the photovoltaic cell does not need to undergo a laser selective heavily doping step, so that the problems that the TOPCon battery is difficult in boron diffusion and the battery piece substrate is greatly damaged by the laser selective heavily doping are solved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a photovoltaic cell, a photovoltaic module and a photovoltaic system.
Background
TOPCon a cell is a solar cell that uses an ultra-thin oxide layer as a passivation layer structure. The prior TOPCon battery generally needs to diffuse boron element on the front surface of the N-type silicon substrate so as to achieve the purpose of forming PN junction. The TOPCon battery mass production technology of the type is mature, and is a TOPCon battery structure which is mainstream in the industry.
However, the TOPCon battery of the type still has a plurality of defects, namely the operation difficulty of the existing boron diffusion process is high, in the diffusion process of boron elements, a diffusion boron source is introduced into diffusion equipment in a gas carrying source mode, the diffusion boron source is easy to be unevenly distributed on the front surface of an N-type silicon substrate, so that the formed PN junction is uneven, in addition, the diffusion of boron on the silicon substrate is very difficult, the boron elements are difficult to diffuse into the silicon substrate, and in the second, the front PN junction preparation technology of the TOPCon battery of the type, besides the fact that the diffusion of the boron source is realized on the front surface of the N-type silicon substrate, a subsequent laser heavily doping step is needed, the boron elements can be diffused into the silicon substrate through laser, so that a selective emitter is formed, and the substrate of the battery piece is greatly damaged by the laser selective heavily doping process. In addition, the passivation effect of this type TOPCon of cell is mainly concentrated on the back side of the N-type silicon substrate, and the front side passivation effect of the cell is not good enough.
Disclosure of Invention
The invention aims to provide a photovoltaic cell, a photovoltaic module comprising the photovoltaic cell and a photovoltaic system, and aims to solve the problems that boron diffusion is difficult and a cell substrate is damaged greatly by laser selective heavy doping in the existing TOPCon cell preparation process.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
A photovoltaic cell comprises a silicon substrate, an emission passivation structure arranged on the front surface of the silicon substrate, a tunneling electric field passivation structure arranged on the back surface of the silicon substrate, and an electrode assembly, wherein,
The emission passivation structure is provided with an intrinsic amorphous silicon layer, a boron-doped polycrystalline silicon layer or a boron-doped microcrystalline silicon layer and a front passivation layer, and the intrinsic amorphous silicon layer is arranged on the front of the silicon substrate;
the electrode assembly includes a first electrode connected to the emission passivation structure and a second electrode connected to the tunneling electric field passivation structure.
In some embodiments, the tunneling electric field passivation structure comprises a tunneling oxide layer, a heavily doped polysilicon layer, and a back side silicon nitride layer, the tunneling oxide layer being disposed on the back side of the silicon substrate.
In some embodiments, the front side passivation layer comprises an aluminum oxide layer disposed on the front side of the boron doped polysilicon layer or the boron doped microcrystalline silicon layer.
In some embodiments, the front passivation layer further includes a silicon nitride layer or a silicon oxide layer disposed on the front side of the aluminum oxide layer.
In some embodiments, the number of the first electrodes is a plurality, and the plurality of first electrodes are arranged at intervals along the length direction of the silicon substrate; the number of the second electrodes is a plurality of, and the plurality of first electrodes are arranged at intervals along the length direction of the silicon substrate.
In some embodiments, one end of the first electrode is disposed in the boron doped polysilicon layer or the boron doped microcrystalline silicon layer, or one end of the first electrode is disposed at the interface of the boron doped polysilicon layer or the boron doped microcrystalline silicon layer and the boron doped amorphous silicon layer.
In some embodiments, the first electrode, the second electrode are silver electrodes.
In some embodiments, the silicon substrate is an N-type silicon substrate.
Based on the photovoltaic cell, the invention further provides a photovoltaic module, which comprises the photovoltaic cell.
Based on the photovoltaic module, the invention further provides a photovoltaic system, which comprises the photovoltaic module.
Compared with the prior art, the photovoltaic cell, the photovoltaic module and the photovoltaic system comprising the photovoltaic cell have the beneficial effects that:
(1) The boron-doped polycrystalline silicon layer or the boron-doped microcrystalline silicon layer is arranged and matched with the boron-doped amorphous silicon layer, so that the boron diffusion layer arranged on the front surface of the silicon substrate of the conventional TOPCon battery is replaced, and the preparation process of the photovoltaic battery does not need to undergo a laser selective heavily doping step, so that the problems that the TOPCon battery is difficult in boron diffusion and poor in laser selective heavily doping control, and the battery substrate is greatly damaged by laser are radically solved;
(2) According to the photovoltaic cell, the intrinsic amorphous silicon layer is arranged on the front surface of the silicon substrate, so that a plurality of passivation structures such as the intrinsic amorphous silicon layer and the front passivation layer are formed on the front surface of the silicon substrate, the passivation effect of the front surface of the cell is effectively improved, and the electrical loss in the power generation process of the cell is reduced;
(3) The photovoltaic cell improves the conductivity of the emission passivation structure of the photovoltaic cell by arranging the boron-doped polycrystalline silicon layer, effectively improves the electrical property of the emission passivation structure and reduces the electrical transmission loss of the emission passivation structure.
Drawings
Fig. 1 is a schematic view of a photovoltaic cell of example 1 of this invention;
Fig. 2 is a schematic diagram of a photovoltaic cell in example 2 of this invention.
In the figure, 1, a silicon substrate; 2. emitting a passivation structure; 20. an intrinsic amorphous silicon layer; 21. a boron-doped amorphous silicon layer; 22a, boron doped polysilicon layer; 22b, boron-doped microcrystalline silicon layer; 23. a front passivation layer; 230. an alumina layer; 231a, a front side silicon nitride layer; 231b, a silicon oxide layer; 3. a tunneling electric field passivation structure; 30. tunneling oxide layer; 31. heavily doped polysilicon layer; 32. a back side silicon nitride layer; 4. a first electrode; 5. and a second electrode.
Detailed Description
The following describes in further detail the embodiments of the present invention with reference to the drawings and examples. The following examples are illustrative of the invention and are not intended to limit the scope of the invention.
In the description of the present invention, it will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element. The terms "mounted," "connected," "coupled," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present invention, it should be understood that the terms "height," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used herein with respect to the orientation or positional relationship shown in the drawings merely to facilitate describing the invention and simplify the description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operate in a particular orientation, and thus should not be construed as limiting the invention.
In the description of the present invention, it should be understood that the terms "first," "second," and the like are used herein for descriptive purposes only and are not to be construed as indicating or implying a relative importance or an implicit indication of the number of features being indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature.
Example 1
As shown in fig. 1, a photovoltaic cell according to a preferred embodiment of the present invention includes a silicon substrate 1, an emission passivation structure 2 disposed on the front surface of the silicon substrate 1, a tunneling electric field passivation structure 3 disposed on the back surface of the silicon substrate 1, and an electrode assembly, wherein,
The emission passivation structure 2 is provided with an intrinsic amorphous silicon layer 20, a boron-doped amorphous silicon layer 21, a boron-doped polycrystalline silicon layer 22a and a front passivation layer 23, and the intrinsic amorphous silicon layer 20 is arranged on the front surface of the silicon substrate 1;
the front passivation layer 23 includes an aluminum oxide layer 230 and a front silicon nitride layer 231a, the aluminum oxide layer 230 is disposed on the front surface of the boron doped polysilicon layer 22a, and the front silicon nitride layer 231a is disposed on the front surface of the aluminum oxide layer 230;
The tunneling electric field passivation structure 3 comprises a tunneling oxide layer 30, a heavily doped polysilicon layer 31 and a back silicon nitride layer 32, wherein the tunneling oxide layer 30 is arranged on the back of the silicon substrate 1;
The electrode assembly comprises a first electrode 4 and a second electrode 5, the first electrode 4 being connected to the emissive passivation structure 2 and the second electrode 5 being connected to the tunneling electric field passivation structure 3.
The front surface and the back surface of the silicon substrate 1 are opposite end surfaces, and the intrinsic amorphous silicon layer 20 and the tunnel oxide layer 30 are respectively disposed at opposite ends of the silicon substrate 1.
Based on the above scheme, the boron doped polysilicon layer 22a of the photovoltaic cell of this embodiment 1 is matched with the boron doped amorphous silicon layer 21, instead of the boron diffusion layer of the prior TOPCon cell arranged on the front side of the silicon substrate 1, so that the photovoltaic cell of this embodiment 1 does not need to undergo a conventional boron diffusion process in the preparation process, the problem of difficult boron diffusion in the preparation process of the prior photovoltaic cell is solved, and the preparation of the boron doped amorphous silicon layer 21 can be finished in a manner of plasma enhanced chemical vapor deposition, in this manner, the in-situ doping of silane and boron sources can be realized by freely adjusting the doping concentration by changing the gas flow ratio, and the preparation of the boron doped amorphous silicon layer 21, the boron doped polysilicon layer 22a or the boron doped microcrystalline silicon layer 22b does not need to be subjected to high-power laser selective heavy doping, thereby solving the problem of high damage to the substrate of the cell caused by the laser selective heavy doping in the preparation process of the prior photovoltaic cell.
In addition, the photovoltaic cell of this embodiment 1 optimizes the performance of the front structural layer of the silicon substrate 1 through the intrinsic amorphous silicon layer 20 and the boron doped polysilicon layer 22a disposed on the front surface of the silicon substrate 1, for example, by disposing the intrinsic amorphous silicon layer 20 on the front surface of the silicon substrate 1, the front surface of the silicon substrate 1 forms a plurality of passivation structures of the intrinsic amorphous silicon layer 20 and the front passivation layer 23, so as to effectively improve the passivation effect of the front surface of the cell and reduce the electrical loss in the power generation process of the cell; by providing the boron doped polysilicon layer 22a, the conductivity of the emissive passivation structure 2 is improved, the electrical performance of the emissive passivation structure 2 is effectively improved, and the electrical transmission loss of the emissive passivation structure 2 is reduced.
In this embodiment 1, the silicon substrate 1 is an N-type silicon substrate 1, which is coupled with a boron doped polysilicon layer 22a and a boron doped amorphous silicon layer 21 to generate a PN junction. Under the condition of the same doping concentration, the service life of the N-type silicon substrate 1 is far longer than that of the minority carrier of the P-type silicon substrate 1, so that the N-type silicon substrate 1 has the advantages of long minority carrier service life and small photoinduced attenuation, and meanwhile, the N-type silicon substrate 1 has larger tolerance to metal impurities, so that the photovoltaic cell of the embodiment 1 is preferably prepared by adopting the N-type silicon substrate 1.
In this embodiment 1, the number of the first electrodes 4 is plural, the plural first electrodes 4 are arranged at intervals along the length direction of the silicon substrate 1, and one end of the first electrode 4 is disposed in the boron doped polysilicon layer 22a, or one end of the first electrode 4 is disposed at the junction of the boron doped polysilicon layer 22a and the boron doped amorphous silicon layer 21, so as to ensure the conductive connection between the first electrode 4 and the emission passivation structure 2; the number of the second electrodes 5 is plural, the plural second electrodes 5 are arranged at intervals along the length direction of the silicon substrate 1, and one end of the second electrode 5 is arranged in the heavily doped polysilicon layer 31. By arranging a plurality of first electrodes 4, a plurality of second electrodes 5, the present photovoltaic cell is connected to a load or other closed circuit when preparing a photovoltaic module, a photovoltaic system.
The first electrode 4 and the second electrode 5 may be silver electrodes, and in other embodiments, the first electrode 4 and the second electrode 5 may be made of other materials for conductive connection according to specifications and performance requirements of the photovoltaic cell design.
Based on the foregoing photovoltaic cell, embodiment 1 also provides a photovoltaic module, which includes the foregoing photovoltaic cell. The number of the photovoltaic cells can be multiple, and the photovoltaic module can be formed by packaging two or more photovoltaic cells after being connected in series and/or parallel. In practical applications, the photovoltaic module may be connected in parallel or in series by fixing the photovoltaic cells in the corresponding structural members through the structural members for fixing the photovoltaic cells.
In addition, based on the aforementioned photovoltaic cell, this embodiment 1 also provides a photovoltaic system, which includes the aforementioned photovoltaic module. The photovoltaic system may be formed by connecting one or more of the above photovoltaic modules in series and/or in parallel, so that the photovoltaic system includes a plurality of photovoltaic cells of embodiment 1. In practical applications, the area of the photovoltaic system can be increased by increasing the number of photovoltaic modules in series and/or parallel connection.
Example 2
As shown in fig. 2, this embodiment 2 is different from embodiment 1 in that the structural layer of the emission passivation structure 2 is different, in that,
In this embodiment 2, in the emission passivation structure 2, the boron-doped microcrystalline silicon layer 22b is disposed between the boron-doped amorphous silicon layer 21 and the front passivation layer 23, so that the emission passivation structure 2 of the photovoltaic cell of this embodiment 2 includes the intrinsic amorphous silicon layer 20, the boron-doped amorphous silicon layer 21, the boron-doped microcrystalline silicon layer 22b, and the front passivation layer 23, and the intrinsic amorphous silicon layer 20 is disposed on the front surface of the silicon substrate 1;
In the front passivation layer 23, the front surface of the alumina layer 230 is the silica layer 231b, so that the front passivation layer 23 of the photovoltaic cell of this embodiment 2 includes the alumina layer 230 and the silica layer 231b, the alumina layer 230 is connected to the boron doped microcrystalline silicon layer 22b, and the silicon nitride layer is disposed on the front surface of the alumina layer 230.
Based on the difference of the structural layers of the emission passivation structure 2, in the present embodiment 2, one end of the first electrode 4 is disposed in the boron doped microcrystalline silicon layer 22b, or one end of the first electrode 4 is disposed at the junction of the boron doped microcrystalline silicon layer 22b and the boron doped amorphous silicon layer 21, so as to ensure the conductive connection between the first electrode 4 and the emission passivation structure 2.
According to the design requirement of the photovoltaic cell on performance, the boron-doped microcrystalline silicon layer 22b or the boron-doped polycrystalline silicon layer 22a, the silicon nitride layer or the silicon oxide layer 231b can be selectively arranged to adjust the passivation and electrical transmission effects of the front surface of the photovoltaic cell.
In summary, the embodiment of the invention provides a photovoltaic cell, a photovoltaic module and a photovoltaic system, wherein the photovoltaic cell is provided with a boron doped polycrystalline silicon layer 22a or a boron doped microcrystalline silicon layer 22b and is matched with a boron doped amorphous silicon layer 21, so that a boron diffusion layer arranged on the front surface of a silicon substrate 1 of the conventional TOPCon cell is replaced, the preparation process of the photovoltaic cell is not required to undergo a laser selective heavily doping step, the problems that TOPCon cell is difficult in boron diffusion and poor in laser selective heavily doping control, and the substrate of the cell is damaged greatly by laser are solved fundamentally, and the front surface of the silicon substrate 1 of the photovoltaic cell is provided with an intrinsic amorphous silicon layer 20, a plurality of passivation structures such as an intrinsic amorphous silicon layer 20 and a front passivation layer 23 are formed on the front surface of the silicon substrate 1, the passivation effect on the front surface of the cell is effectively improved, and the electrical loss in the power generation process of the cell is reduced; in addition, the boron-doped polycrystalline silicon layer 22a is arranged in the photovoltaic cell, so that the conductivity of the emission passivation structure 2 is improved, the electrical performance of the emission passivation structure 2 is effectively improved, and the electrical transmission loss of the emission passivation structure 2 is reduced.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and substitutions can be made by those skilled in the art without departing from the technical principles of the present invention, and these modifications and substitutions should also be considered as being within the scope of the present invention.
Claims (10)
1. A photovoltaic cell is characterized by comprising a silicon substrate, an emission passivation structure arranged on the front surface of the silicon substrate, a tunneling electric field passivation structure arranged on the back surface of the silicon substrate and an electrode assembly, wherein,
The emission passivation structure is provided with an intrinsic amorphous silicon layer, a boron-doped polycrystalline silicon layer or a boron-doped microcrystalline silicon layer and a front passivation layer, and the intrinsic amorphous silicon layer is arranged on the front of the silicon substrate;
The electrode assembly includes a first electrode connected to the emission passivation structure and a second electrode connected to the tunneling electric field passivation structure.
2. The photovoltaic cell of claim 1, wherein the tunneling electric field passivation structure comprises a tunneling oxide layer, a heavily doped polysilicon layer, a back side silicon nitride layer, the tunneling oxide layer disposed on the back side of the silicon substrate.
3. The photovoltaic cell of claim 1, wherein the front side passivation layer comprises an aluminum oxide layer disposed on the front side of the boron doped polysilicon layer or the boron doped microcrystalline silicon layer.
4. The photovoltaic cell of claim 3, wherein the front side passivation layer further comprises a silicon nitride layer or a silicon oxide layer disposed on the front side of the aluminum oxide layer.
5. The photovoltaic cell of claim 1, wherein the number of first electrodes is a plurality, the plurality of first electrodes being spaced apart along the length of the silicon substrate; the number of the second electrodes is a plurality, and the first electrodes are arranged at intervals along the length direction of the silicon substrate.
6. The photovoltaic cell of claim 1, wherein one end of the first electrode is disposed within the boron doped polysilicon layer or the boron doped microcrystalline silicon layer, or
One end of the first electrode is arranged at the junction of the boron-doped polycrystalline silicon layer or the boron-doped microcrystalline silicon layer and the boron-doped amorphous silicon layer.
7. The photovoltaic cell of claim 1, wherein the first electrode and the second electrode are silver electrodes.
8. The photovoltaic cell of claim 1, wherein the silicon substrate is an N-type silicon substrate.
9. A photovoltaic module comprising the photovoltaic cell of any of claims 1-8.
10. A photovoltaic system comprising the photovoltaic module of claim 9.
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| CN202410393849.3A CN118053918A (en) | 2024-04-02 | 2024-04-02 | Photovoltaic cell, photovoltaic module and photovoltaic system |
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| CN202410393849.3A CN118053918A (en) | 2024-04-02 | 2024-04-02 | Photovoltaic cell, photovoltaic module and photovoltaic system |
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