CN117991431A - Filter device, imaging system and preparation method of filter device - Google Patents
Filter device, imaging system and preparation method of filter device Download PDFInfo
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- CN117991431A CN117991431A CN202410397862.6A CN202410397862A CN117991431A CN 117991431 A CN117991431 A CN 117991431A CN 202410397862 A CN202410397862 A CN 202410397862A CN 117991431 A CN117991431 A CN 117991431A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 127
- 238000001914 filtration Methods 0.000 claims abstract description 76
- 230000000903 blocking effect Effects 0.000 claims abstract description 8
- 238000000926 separation method Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 27
- 238000005192 partition Methods 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000012632 fluorescent imaging Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
The invention provides a filter device, an imaging system and a preparation method of the filter device. The filter device includes: the optical filtering structure comprises a light incident surface and a light emergent surface opposite to the light incident surface along a first direction, and only allows a first optical signal with a wavelength of Yu Yushe or less to penetrate, wherein the first optical signal is incident from the light incident surface; the light splitting structure is located on the light emitting surface of the light filtering structure and comprises a plurality of light channels arranged at intervals and a separation wall located between the adjacent light channels, the first light signals emitted from the light emitting surface can pass through the light channels, and the separation wall is used for blocking the first light signals to pass through. The invention improves the filtering effect and simplifies the whole structure of the filtering device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a filter device, an imaging system and a preparation method of the filter device.
Background
In some applications, to improve imaging effect, incident light (such as a specially adapted light source or broad-spectrum background light) outside the imaging chip needs to be processed to shield light that does not match the wavelength required by the imaging chip, and stray light. In this case, it is advantageous to use a filter assembly for processing the incident light.
For example, a vertical charge transfer imaging chip is a semiconductor device for converting an optical image into an electronic signal. Vertical charge transfer imaging chips typically include a light detection structure that detects an optical image of a sample after light from a light source impinges on the sample, and an imaging structure that converts the optical image into an electronic signal and is read by a user. However, due to the wider wavelength range of the light emitted by the light source, part of the light emitted by the light source may be detected by the light detection structure, so as to interfere with the optical image, thereby affecting the accuracy and reliability of the electronic signal generated by the imaging structure.
Therefore, how to improve the filtering effect of the filtering device and simplify the structure of the filtering device is a technical problem to be solved currently.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a filter device and a preparation method thereof, which can improve the filtering effect and simplify the structure of the filter device.
In order to achieve the above object, the present invention provides the following solutions:
The invention provides a filter device for 400-100 nm wavelength light (visible and partial near infrared light) and a preparation method thereof, which are used for improving the filtering effect and simplifying the structure of the filter device.
According to some embodiments, the present invention provides a filter device for 400-100 nm wavelength light, comprising:
the optical filtering structure comprises an incident surface and an emergent surface opposite to the incident surface along a first direction, and only allows a first optical signal which is incident from the incident surface and has a wavelength not smaller than a preset wavelength to penetrate;
The light splitting structure is located on the light emitting surface of the light filtering structure and comprises a plurality of light channels arranged at intervals and a separation wall located between the adjacent light channels, the first light signals emitted from the light emitting surface can pass through the light channels, and the separation wall is used for blocking crosstalk between the first light signals in the adjacent light channels.
In some embodiments, the filter structure includes first and second filter layers alternately stacked along the first direction, and the first filter layer has a refractive index greater than a refractive index of the second filter layer.
In particular, in some embodiments, the material of the first filter layer is TiO 2 and the material of the second filter layer is SiO 2.
In some embodiments, the light splitting structure further comprises:
The isolation layer is positioned on the light emitting surface of the light filtering structure along the first direction, and is positioned between the light channel and the light filtering structure, and the isolation layer is used for isolating the light channel and the light filtering structure.
In some embodiments, the partition wall comprises:
a dividing wall positioned between adjacent ones of the light channels;
a first dielectric layer covering the surface of the partition wall;
The second medium layer is covered on the surface of the first medium layer, is positioned between the first medium layer and the optical channel, and has a refractive index larger than that of the second medium layer.
In some embodiments, the material of the first dielectric layer is alumina, the material of the second dielectric layer is silica, the thickness of the first dielectric layer is 7 nm-8 nm, and the thickness of the second dielectric layer is 1 nm-2 nm.
In some embodiments, the light splitting structure comprises:
the anti-reflection layer is positioned at the end part of the optical channel, facing the optical filtering structure, along the first direction and is used for transmitting the first optical signal, and the anti-reflection layer is made of tantalum oxide;
the material of the optical channel may be silicon.
According to other embodiments, the present invention further provides a method for manufacturing a filter device, including the following steps:
preparing a light splitting structure, wherein the light splitting structure comprises a plurality of light channels arranged at intervals and a partition wall positioned between the adjacent light channels;
The light-splitting structure is characterized in that a light-filtering structure is prepared above the light-splitting structure, the light-filtering structure comprises a light incident surface and a light emergent surface opposite to the light incident surface along a first direction, the light-filtering structure only allows first light signals which are incident from the light incident surface and have preset wavelengths to penetrate, the first light signals emitted from the light emergent surface can penetrate through the light channel, and the partition wall is used for blocking the first light signals to penetrate through.
In some embodiments, the step of preparing a light filtering structure over the light splitting structure comprises:
alternately depositing a first filter layer and a second filter layer along the first direction to form the filter structure comprising the first filter layer and the second filter layer, wherein the refractive index of the first filter layer is larger than that of the second filter layer. The first filter layer and the second filter layer may be alternately deposited a plurality of times.
According to the filter device and the preparation method thereof, the filter device with the filter structure and the light splitting structure is arranged, and the filter structure only allows the first optical signal with the preset wavelength to penetrate, so that other stray light is prevented from entering the light splitting structure through the filter effect of the filter structure, and the purity of an optical signal (such as the first optical signal) entering the light splitting structure is improved. Meanwhile, by arranging the light splitting structure on the light emitting surface of the light filtering structure, the first optical signal filtered by the light filtering structure is separated into a plurality of light beams by the light splitting structure, so that the first optical signal is subjected to light splitting treatment (namely pre-light treatment) before entering an imaging device connected with the filter device, the purity and the collimation degree of each separated light beam are improved, and the influence between adjacent light beams can be well reduced. The invention improves the filtering effect of the filter device through the combination of the filtering structure and the light splitting structure. Meanwhile, the invention has the advantages that the filter structure and the light splitting structure are formed, so that a lens structure is not required to be arranged in the filter device, the integral structure of the filter device is simplified, the further miniaturization of the size of the filter device is facilitated, and the invention has wide application prospects in the fields of lens-free imaging and biomedical fluorescent imaging.
According to another aspect of the present invention, an imaging system is disclosed, comprising at least one photosensitive element assembly, said photosensitive element assembly comprising at least one photosensitive element for receiving incident light of interest, characterized in that said photosensitive element assembly comprises said filter device of the present invention, said filter device operating in a wavelength band of 400-1000 nm.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
According to the invention, the filter device with the filter structure and the light splitting structure is arranged, and the filter structure only allows the first optical signal with the preset wavelength to penetrate, so that other stray light is prevented from entering the light splitting structure through the filter function of the filter structure, and the purity of the optical signal (such as the first optical signal) entering the light splitting structure is improved. Meanwhile, by arranging the light splitting structure on the light emitting surface of the light filtering structure, the first optical signal filtered by the light filtering structure is separated into a plurality of light beams by the light splitting structure, so that the first optical signal is subjected to light splitting treatment (namely pre-light treatment) before entering an imaging device connected with the filter device, the purity and the collimation degree of each separated light beam are improved, and the influence between adjacent light beams can be well reduced. The invention improves the filtering effect of the filter device through the combination of the filtering structure and the light splitting structure. Meanwhile, the invention has the advantages that the filter structure and the light splitting structure are formed, so that a lens structure is not required to be arranged in the filter device, the integral structure of the filter device is simplified, the further miniaturization of the size of the filter device is facilitated, and the invention has wide application prospects in the fields of lens-free imaging and biomedical fluorescent imaging.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic cross-sectional view of a filter device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an imaging device with an integrated filter device according to an embodiment of the present invention;
Fig. 3 is a flowchart of a method for manufacturing a filter device according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
This embodiment provides a filter device, and fig. 1 is a schematic cross-sectional view of the filter device in the embodiment of the present invention. As shown in fig. 1, the filter device may operate in a band with a wavelength of 400-1000 nm, including:
The optical filtering structure 18 includes a light incident surface and a light emergent surface opposite to the light incident surface along a first direction D1, and the optical filtering structure 18 only allows the first optical signal incident from the light incident surface and having a preset wavelength to penetrate;
The light splitting structure 19 is located on the light emitting surface of the light filtering structure 18, the light splitting structure 19 includes a plurality of light channels 12 disposed at intervals, and a partition wall located between adjacent light channels 12, the first optical signal emitted from the light emitting surface can pass through the light channels 12, and the partition wall is used for blocking crosstalk between the first optical signals in adjacent light channels 12.
Specifically, the light filtering structure 18 and the light splitting structure 19 are sequentially stacked along the first direction D1, and the light splitting structure 19 is located at one side of the light emitting surface in the light filtering structure 18. After the light in the external environment enters the filter structure 18 from the light incident surface in the filter structure 18, only the first optical signal with the preset wavelength can penetrate through the filter structure 18 and be emitted from the light emitting surface, and other light with the wavelength outside the preset wavelength is reflected back into the external environment or absorbed by the filter structure 18, so that the filtering and the extraction of the optical signal are realized. The first optical signal emitted from the light emitting surface of the optical filter structure 18 directly enters the light splitting structure 19 to be split, and the first optical signal is separated into a plurality of independent separated beams corresponding to the optical channels 12 one by one through the blocking effect of the partition wall. In this embodiment, by combining the filtering structure 18 with the light splitting structure 19, the light processed by the filtering device is a plurality of separated light beams which are independent from each other and have the preset wavelength, so that on one hand, the efficiency of performing subsequent analysis processing on the separated light beams and the accuracy and reliability of the analysis processing are improved, for example, the imaging effect of the imaging device with the filtering device is improved; on the other hand, a collimating and focusing structure such as a lens is not required to be arranged in the filter device, so that the lens-free filtering, light splitting and collimation are realized, the integral structure of the filter device is simplified, the further miniaturization of the size of an imaging device with the filter device is facilitated, and the imaging device has wide application prospects in the fields of lens-free imaging and biomedical fluorescent imaging.
In an embodiment, the filtering structure 18 can cut off the optical signal with a wavelength below a threshold range, and can pass the optical signal with a wavelength above the threshold range (for example, the first optical signal with a preset wavelength), so that the filtering structure 18 has a high-pass filtering function. In another example, the filtering structure 18 allows light signals having wavelengths above a threshold range to be cut off and light signals having wavelengths below the threshold range (e.g., first light signals having a preset wavelength) to pass through, such that the filtering structure 18 has a low pass filtering function.
In some embodiments, the optical filtering structure 18 includes first optical filtering layers 181 and second optical filtering layers 182 alternately stacked along the first direction D1, and the refractive index of the first optical filtering layers 181 is greater than the refractive index of the second optical filtering layers 182.
Specifically, as shown in fig. 1, the optical filter structure 18 includes a plurality of the first optical filter layers 181 and the second optical filter layers 182 alternately arranged along the first direction D1, thereby forming a distributed bragg reflection optical filter structure. The bragg-reflection filter structure is formed by setting the refractive index of the first filter layer 181 to be greater than the refractive index of the second filter layer 182. By adjusting the thickness and material of the first filter layer 181 and the thickness and material of the second filter layer 182 so that the filter structure 18 allows only the first optical signal having the predetermined wavelength to be transmitted therethrough, the optical signals having other wavelengths than the predetermined wavelength are reflected and/or absorbed by the filter structure 18, thereby reducing the arrangement that the impurity optical signal (i.e., noise) is prevented from entering the beam splitting structure 19, the effect of the image formed by the imaging device having the filter device is improved.
To simplify the manufacturing process of the filter structure 18 and reduce the manufacturing cost of the filter device, in some embodiments, the material of the first filter layer 181 is TiO2, and the material of the second filter layer 182 is SiO2. In some embodiments, the thickness of the first filter layer 181 is less than the thickness of the second filter layer 182. In one embodiment, the thickness of the second filter layer 182 is 2 times the thickness of the first filter layer 181.
In some embodiments, the light splitting structure 19 further includes:
An isolation layer 17 is located on the light emitting surface of the light filtering structure 18 along the first direction D1, and the isolation layer 17 is located between the light channel 12 and the light filtering structure 18, where the isolation layer 17 is used for isolating the light channel 12 and the light filtering structure 18.
Specifically, the isolation layer 17 is used to isolate the optical channel 12 from the optical filtering structure 18, so as to avoid the process of forming the optical filtering structure 18 from affecting the optical channel 12 (e.g., avoid impurities entering the optical channel 12 when depositing the optical filtering structure 18), so as to protect the optical channel 12. In one example, the material of the isolation layer 17 is an oxide material, such as silicon dioxide. The thickness of the isolation layer 17 along the first direction D1 may be 130nm.
In some embodiments, the partition wall further comprises:
A dividing wall 13 located between adjacent ones of the light channels 12;
a first dielectric layer 15 covering the surface of the partition wall 13;
The second dielectric layer 14 covers the surface of the first dielectric layer 15, the second dielectric layer 14 is located between the first dielectric layer 15 and the optical channel 12, and the refractive index of the first dielectric layer 15 is greater than the refractive index of the second dielectric layer 14.
This embodiment, by forming the first dielectric layer 15 covering the partition wall 13 and the second dielectric layer 14 covering the surface of the first dielectric layer 15, and making the refractive index of the first dielectric layer 15 larger than that of the second dielectric layer 14, not only can the crosstalk between the first optical signals in adjacent optical channels 12 be avoided by the combination of the first dielectric layer 15 (high refractive index material) and the second dielectric layer 14 (low refractive index material), but also the surface defect of the partition wall 13 can be repaired, and not only can the signal crosstalk between the adjacent optical channels 12 be reduced better, and thus the generation of dark current noise can be reduced, but also the performance of transmitting the first optical signals by the optical channels 12, such as the further reduction of the divergence angle of the split light beams emitted from the optical channels 12, can be improved. The dividing wall 13 is used for supporting the first dielectric layer 15 and the second dielectric layer 14 and isolating the adjacent light channels 12.
In some embodiments, the material of the first dielectric layer 15 is alumina, the material of the second dielectric layer 14 is silica, the thickness of the first dielectric layer 15 is 7 nm-8 nm, and the thickness of the second dielectric layer 14 is 1 nm-2 nm. In an example, the thickness of the first dielectric layer 15 along the second direction D2 is 7.5nm, the thickness of the second dielectric layer 14 along the second direction D2 is 1.5nm, and the second direction D2 intersects (e.g., perpendicularly intersects) the first direction D1.
In some embodiments, the light splitting structure 19 includes:
an anti-reflection layer 16 located at an end of the optical channel 12 facing the optical filtering structure 18 along the first direction D1, for transmitting the first optical signal, wherein the anti-reflection layer 16 is made of tantalum oxide;
the material of the optical channel 12 may be silicon, or other similar semiconductor materials.
Specifically, the anti-reflection layer 16 has a higher refractive index and a lower reflectivity, so that the transmittance of the first optical signal can be improved, and the first optical signal emitted from the light emitting surface of the optical filter structure 18 can enter the optical channel 12 through the anti-reflection layer 16, so that the damage of the first optical signal is reduced, and the light emitting rate of the optical filter device is improved. In one embodiment, the thickness of the anti-reflection layer 16 along the first direction D1 is 52nm, and the length of the light channel 12 along the first direction D1 is 1.6 μm.
The application of the filter device is illustrated below. Fig. 2 is a schematic structural view of an imaging apparatus integrated with a filter device according to an embodiment of the present invention, and the structure of the filter device may be referred to in fig. 1. As shown in fig. 2, the imaging apparatus of the integrated filter device includes a substrate, a filter device, and an imaging structure 11. The imaging structure 11 is located on a substrate, and the imaging structure 11 is located between the filter device and the substrate along a first direction D1, the imaging structure 11 includes a light detection region and a device region, the light detection region is located between the device region and the light splitting structure 19 of the filter device along the first direction D1, the light detection region is used for converting the first optical signal into an electrical signal, and the device region is used for imaging according to the electrical signal.
The substrate 10 may be, but is not limited to, a silicon substrate, and this embodiment will be described by taking the substrate 10 as a silicon substrate. The imaging structure 11 and the filter device are sequentially stacked on the top surface of the substrate 10 along the first direction D1. Wherein, the top surface of the substrate 10 refers to the surface of the substrate 10 facing the filter device, the first direction D1 is perpendicular to the top surface of the substrate 10, and the second direction D2 is parallel to the top surface of the substrate 10. The imaging structure in the imaging apparatus of the integrated filter device described in this embodiment may be, but is not limited to, a vertical charge transfer imaging chip integrated with optical filtering. The vertical charge transfer imaging chip with the imaging structure as integrated optical filtering will be described below as an example. The filter device is configured to filter the optical signal, so that only the first optical signal having the preset wavelength can penetrate through the optical filtering structure 18 and enter the optical splitting structure 19, and optical signals having other wavelengths (i.e., optical signals other than the first optical signal having the preset wavelength) are reflected and/or absorbed, thereby reducing the entry of impurity light into the imaging structure 11 and improving the imaging effect of the imaging structure 11. The split light beam split by the beam splitting structure 19 enters the imaging structure 11. The optical detection region in the imaging structure 11 is configured to detect the first optical signal penetrating through the filter device into the imaging structure 11, and perform photoelectric conversion on the first optical signal, generate the electrical signal, and transmit the electrical signal to the device region. The device region collects the electrical signals from the optical detection region and analyzes the electrical signals (e.g., analyzes parameters such as the intensity of the electrical signals) to generate an electronic image.
In some embodiments, the imaging apparatus of the integrated filter device further includes:
A light source 20 located above the filter structure 18 along the first direction D1;
A carrying platform, located between the light source 20 and the filtering structure 18, for carrying a sample 21, where the light source 20 is configured to emit a second optical signal to the sample 21 on the carrying platform, and excite the sample 21 to generate the first optical signal.
The stage may have any structure as long as it can carry the sample 21 and allow the first optical signal to pass through. For example, as shown in fig. 2, during the process of imaging the sample 21, the sample 21 is placed on the carrying table (not shown) above the filter structure 18, and the sample 21 is made to be closely attached to the light incident surface of the filter structure 18 in the filter device. The light source 20 emits the second optical signal toward the sample 21 on the stage (solid arrows in fig. 2 indicate the transmission direction of the second optical signal). After the second optical signal is irradiated to the sample 21, the sample 21 is excited to generate the first optical signal having the preset wavelength (a dotted arrow in fig. 2 indicates a transmission direction of the first optical signal). The first optical signal having the predetermined wavelength penetrates through the filter structure 18 and enters the beam splitting structure 19, and is split into a plurality of split beams by the beam splitting structure 19 and then enters the imaging structure 11, so that an electronic image of the sample 21 is formed in the imaging structure 11. Other optical signals (e.g., the second optical signal) than the first optical signal having the preset wavelength cannot enter the imaging structure due to being reflected and/or absorbed by the filtering structure 18, so that influence of impurity light (e.g., the second optical signal) on the imaging of the sample 21 is avoided, and accuracy and reliability of sample imaging are improved.
In some embodiments, the wavelength of the first optical signal is greater than the wavelength of the second optical signal, i.e., the predetermined wavelength is greater than the wavelength of the second optical signal. In one embodiment, the first optical signal is a fluorescent signal, and the second optical signal may be any optical signal capable of exciting the sample 21 to generate a fluorescent signal (e.g., the second optical signal may be selected according to the material and structure of the sample 21).
According to another aspect of the present invention, there is provided an imaging system comprising at least one photosensitive element assembly, said photosensitive element assembly comprising at least one photosensitive element for receiving incident light of interest, characterized in that said photosensitive element assembly comprises the aforementioned filter device, said filter device operating in a wavelength band of 400-1000 nm.
Fig. 2 is also a partial view of one embodiment of the imaging system of the present invention.
According to still another aspect of the present invention, there is provided a method for manufacturing a filter device operating in a wavelength band of 400-1000 nm. Fig. 3 is a flowchart of a method for manufacturing a filter device according to an embodiment of the present invention. The structure of the filter device prepared in this embodiment may be seen in fig. 1. As shown in fig. 1 and 3, the preparation method of the filter device includes the following steps:
Step S31, forming a light splitting structure 19, wherein the light splitting structure 19 comprises a plurality of light channels 12 arranged at intervals and partition walls 13 positioned between the adjacent light channels 12;
In step S32, a filter structure 18 is formed above the light splitting structure 19, the filter structure 18 includes a light incident surface and a light emergent surface opposite to the light incident surface along a first direction D1, and the filter structure 18 only allows the first optical signal having a predetermined wavelength incident from the light incident surface to pass through, the first optical signal emitted from the light emergent surface can pass through the optical channel 12, and the partition wall 13 is used for blocking the first optical signal from passing through.
In some embodiments, the specific step of forming the filtering structure 18 above the light splitting structure 19 includes:
first filter layers 181 and second filter layers 182 are alternately deposited along the first direction D1 to form the filter structure 18 including the first filter layers 181 and the second filter layers 182, and the refractive index of the first filter layers 181 is greater than the refractive index of the second filter layers 182.
For example, the first filter material and the second filter material may be alternately deposited along the first direction D1 by using electron beam evaporation in combination with ion beam assistance, to form the first filter layer 181 and the second filter layer 182 alternately arranged along the first direction D1. In the process of alternately depositing the first filter material and the second filter material, the thickness of the first filter layer 181 and the thickness of the second filter layer 182 may be monitored by using a reflective optical thickness monitoring structure or the like, and the thickness of the first filter layer 181 and the thickness of the second filter layer 182 in the filter structure 18 may be precisely controlled and adjusted by adjusting deposition parameters such as a deposition rate, a deposition time or the like, so that a filtering range of the filter structure 18 may be precisely controlled, for example, the first optical signal having the predetermined wavelength may be precisely controlled to penetrate the filter structure 18. Taking the first filter material as TiO 2 and the second filter material as SiO 2 as an example, the deposition rate of TiO 2 can be controlled to be 0.4nm/s, the deposition rate of SiO 2 can be controlled to be 0.8nm/s, and the deposition time precision of TiO 2 and SiO 2 can be controlled to be within 0.1 seconds, so as to accurately monitor the thickness of the first filter layer 181 and the thickness of the second filter layer 182.
According to the filter device and the preparation method thereof, the filter device with the filter structure and the light splitting structure is arranged, and the filter structure only allows the first optical signal with the preset wavelength to penetrate, so that other stray light is prevented from entering the light splitting structure through the filtering function of the filter structure, and the purity of an optical signal (such as the first optical signal) entering the light splitting structure is improved. Meanwhile, by arranging the light splitting structure on the light emitting surface of the light filtering structure, the first optical signal filtered by the light filtering structure is separated into a plurality of light beams by the light splitting structure, so that the first optical signal is subjected to light splitting treatment (namely pre-light treatment) before entering an imaging device connected with the filter device, the purity of each separated light beam is improved, and the influence between adjacent light beams can be well reduced. The invention improves the filtering effect of the filter device through the combination of the filtering structure and the light splitting structure. Meanwhile, the invention has the advantages that the filter structure and the light splitting structure are formed, so that a lens structure is not required to be arranged in the filter device, the integral structure of the filter device is simplified, the further miniaturization of the size of the filter device is facilitated, and the invention has wide application prospects in the fields of lens-free imaging and biomedical fluorescent imaging.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (10)
1. A filter device for a wavelength band of 400-1000nm, comprising:
the optical filtering structure comprises an incident surface and an emergent surface opposite to the incident surface along a first direction, and only allows a first optical signal which is incident from the incident surface and has a wavelength not smaller than a preset wavelength to penetrate;
The light splitting structure is located on the light emitting surface of the light filtering structure and comprises a plurality of light channels arranged at intervals and a separation wall located between the adjacent light channels, the first light signals emitted from the light emitting surface can pass through the light channels, and the separation wall is used for blocking crosstalk between the first light signals in the adjacent light channels.
2. The filter device of claim 1, wherein the filter structure comprises a plurality of first filter layers and second filter layers alternately stacked along the first direction, and wherein the first filter layers have a refractive index greater than a refractive index of the second filter layers.
3. The filter device of claim 2, wherein the material of the first filter layer is TiO 2 and the material of the second filter layer is SiO 2.
4. The filter device of claim 1, wherein the optical splitting structure further comprises:
The isolation layer is positioned on the light emitting surface of the light filtering structure along the first direction, and is positioned between the light channel and the light filtering structure, and the isolation layer is used for isolating the light channel and the light filtering structure.
5. The filter device of claim 4, wherein the isolation wall comprises:
at least one dividing wall positioned between adjacent ones of said light channels;
a first dielectric layer covering the surface of the partition wall;
The second medium layer is covered on the surface of the first medium layer, is positioned between the first medium layer and the optical channel, and has a refractive index larger than that of the second medium layer.
6. The filter device of claim 5, wherein the first dielectric layer is made of alumina, the second dielectric layer is made of silicon dioxide, the first dielectric layer is 7 nm-8 nm thick, and the second dielectric layer is 1 nm-2 nm thick.
7. The filter device of claim 6, wherein the beam splitting structure comprises:
the anti-reflection layer is positioned at the end part of the optical channel, facing the optical filtering structure, along the first direction and is used for transmitting the first optical signal, and the anti-reflection layer is made of tantalum oxide;
The material of the optical channel is silicon.
8. The preparation method of the filter device, the said filter device works in the wave band with 400-1000nm wavelength, characterized by, comprising the following steps:
preparing a light splitting structure, wherein the light splitting structure comprises a plurality of light channels arranged at intervals and a partition wall positioned between the adjacent light channels;
The light-splitting structure is characterized in that a light-filtering structure is prepared above the light-splitting structure, the light-filtering structure comprises a light incident surface and a light emergent surface opposite to the light incident surface along a first direction, the light-filtering structure only allows first light signals which are incident from the light incident surface and have wavelengths not smaller than a preset wavelength to penetrate, the first light signals emitted from the light emergent surface can penetrate through the light channel, and the partition wall is used for blocking the first light signals from penetrating through.
9. The method of fabricating a filter device according to claim 8, wherein the step of fabricating a filter structure over the beam splitting structure comprises:
Alternately depositing a first filter layer and a second filter layer along the first direction to form the filter structure comprising the first filter layer and the second filter layer, wherein the refractive index of the first filter layer is larger than that of the second filter layer.
10. Imaging system comprising at least one photosensitive element assembly, said photosensitive element assembly comprising at least one photosensitive element for receiving incident light of interest, characterized in that said photosensitive element assembly comprises a filter device according to any of claims 1-7, said filter device operating in a wavelength band of 400-1000 nm.
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