CN117954504A - Schottky barrier diode - Google Patents

Schottky barrier diode Download PDF

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Publication number
CN117954504A
CN117954504A CN202211280618.9A CN202211280618A CN117954504A CN 117954504 A CN117954504 A CN 117954504A CN 202211280618 A CN202211280618 A CN 202211280618A CN 117954504 A CN117954504 A CN 117954504A
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semiconductor layer
layer
schottky
sno
concentration
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尹向阳
谢弟银
李静
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Guangzhou Huarui Shengyang Investment Co ltd
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Guangzhou Huarui Shengyang Investment Co ltd
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Priority to CN202211280618.9A priority Critical patent/CN117954504A/en
Priority to PCT/CN2023/096765 priority patent/WO2024082636A1/en
Publication of CN117954504A publication Critical patent/CN117954504A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

The present invention provides a schottky barrier diode having: an ohmic electrode layer 4; the second semiconductor layer 32, the lower surface forms ohmic contact with upper surface of ohmic electrode layer 4, is n-type semiconductor layer, including SnO 2 type compound semiconductor material; the first semiconductor layer 31 is an n-type semiconductor layer and comprises a SnO 2 -class compound semiconductor material, the concentration of electron carriers is less than or equal to 5 multiplied by 10 17/cm3, when the reverse withstand voltage set by the Schottky barrier diode is 10-10000V, the thickness is more than or equal to 0.18 mu m and less than or equal to 112 mu m, and the concentration of electron carriers is lower than that of the second semiconductor layer 32; the lower surface of the schottky electrode layer 1 forms a schottky contact with the upper surface of the second semiconductor layer 31. Compared with a Schottky diode made of a Si-based semiconductor material, the Schottky diode provided by the invention can be applied to a higher reverse withstand voltage scene and can inhibit the increase of forward voltage; compared with a Schottky diode made of a SiC-based semiconductor material, the Schottky diode has lower cost on the premise of equivalent device performance.

Description

Schottky barrier diode
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a Schottky barrier diode.
Background
Semiconductor materials have evolved over several decades from the first generation of semiconductor materials germanium and silicon, to the second generation of semiconductor materials gallium arsenide and indium phosphide, to the third generation of semiconductor materials such as silicon carbide, gallium nitride, boron nitride, and the like, and oxide semiconductor materials including gallium oxide, zinc oxide, tin oxide, and the like. The development of the material iterates, so that the performance of the semiconductor is better and better, and the size of the semiconductor is smaller and smaller.
Silicon is currently the most commonly used material for semiconductor devices and power devices. The raw materials are abundant in reserves, and the crystal growth process is mature and efficient; however, the forbidden bandwidth of the silicon material is 1.1eV, the breakdown field strength is only 40V/μm, and the application of the silicon material has great limitation in some fields with high voltage and high temperature.
The material properties of the third generation semiconductor materials such as silicon carbide and gallium nitride are greatly improved compared with those of silicon. For example, silicon carbide has a forbidden band width of about 3.3eV, which is 3 times that of silicon; the breakdown field strength is about 300V/μm, which is more than 7 times that of silicon. For example, gallium nitride has a forbidden bandwidth of about 3.44eV, which is 3 times more than silicon; the breakdown field strength is about 500V/μm, which is more than 10 times that of silicon. The improvement of the material characteristics enables silicon carbide and gallium nitride to be used in higher-pressure and higher-temperature application scenes, and widens the application boundary of the semiconductor material.
However, the preparation of crystals of either silicon carbide or gallium nitride is difficult. For example, the mainstream preparation process of silicon carbide single crystal adopts physical gas phase transportation method [ PVT ], the crystal growth efficiency is relatively slow, and the crystal growth yield is very low due to the fact that silicon carbide has more than 200 isomers, and the cost of the silicon carbide single crystal is high due to the two factors. For example, the mainstream preparation process of the gallium nitride single crystal adopts a halide vapor phase epitaxy method (HVPE), and adopts an epitaxy mode to grow the crystal, so that the crystal growth efficiency is slower than that of silicon carbide, and the cost of the gallium nitride single crystal is more than 3 times of that of the silicon carbide single crystal due to the relatively expensive source material. These factors greatly affect the application of silicon carbide and gallium nitride to a greater extent.
Disclosure of Invention
Accordingly, the technical problem to be solved by the present invention is to provide a schottky barrier diode which can be applied to a higher reverse withstand voltage scenario and can suppress an increase in forward voltage.
In order to achieve the above object, the schottky barrier diode according to the present invention is as follows:
A schottky barrier diode comprising, stacked in order from bottom to top:
An ohmic electrode layer;
The lower surface of the second semiconductor layer forms ohmic contact with the upper surface of the ohmic electrode layer, the second semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer comprises SnO 2 compound semiconductor materials;
The first semiconductor layer is an n-type semiconductor layer and comprises a SnO 2 -class compound semiconductor material, the concentration of electron carriers of the n-type compound semiconductor material is less than or equal to 5 multiplied by 10 17/cm3, when the reverse withstand voltage set by the Schottky barrier diode is 10-10000V, the thickness of the first semiconductor layer is more than or equal to 0.18 mu m and less than or equal to 112 mu m, and the concentration of the electron carriers of the first semiconductor layer is lower than the concentration of the electron carriers of the second semiconductor layer;
And the lower surface of the Schottky electrode layer forms Schottky contact with the upper surface of the first semiconductor layer.
Further, a dielectric layer is stacked on the upper surface of the first semiconductor layer, a window is formed in the dielectric layer, so that part of the dielectric layer leaks out of the upper surface of the first semiconductor layer, and the schottky electrode layer is filled in the window and extends to the upper surface of the dielectric layer along the side wall of the window.
The concentration of electron carriers of the second semiconductor layer is 10 times or more higher than the concentration of electron carriers of the first semiconductor layer.
Further, the thickness of the first semiconductor layer is larger than or equal to the width of the depletion layer corresponding to the reverse withstand voltage.
Further, the concentration of electron carriers of the first semiconductor layer is 5×10 16/cm3 or less; or the concentration of electron carriers of the first semiconductor layer is 5×10 15/cm3.
Further, the concentration of the electron carrier of the second semiconductor layer is greater than or equal to 5×10 17/cm3 based on the range of the concentration of the electron carrier of the first semiconductor layer.
The concentration of the electron carrier in the second semiconductor layer is not based on the range of the concentration of the electron carrier in the first semiconductor layer, but is greater than or equal to 5×10 17/cm3.
The Schottky diode based on the SnO 2 semiconductor material provided by the invention has the following two advantages:
First, compared to silicon-based schottky diodes, schottky diodes based on SnO 2 -type semiconductor materials can be applied to higher reverse withstand voltage scenarios, which can be as high as several thousand volts in withstand voltage. Meanwhile, the increase of forward voltage can be restrained, the loss of the device is reduced, and the heating of the device is reduced.
Secondly, compared with a silicon carbide-based schottky diode, the schottky diode based on the SnO 2 semiconductor material adopts a physical vapor transport method [ PVT ] for single crystal preparation, but under the condition of long crystal, only one isomer exists in stable existence [ tetragonal rutile ], so that the yield of the long crystal can be greatly improved. So that the cost of the monocrystal is greatly reduced relative to that of the silicon carbide monocrystal. Compared with the gallium nitride-based Schottky diode, the preparation efficiency of the SnO 2 single crystal is higher than that of the gallium nitride single crystal, the source material cost of the SnO 2 single crystal is lower than that of the gallium nitride single crystal, and the cost of the SnO 2 single crystal is greatly reduced compared with that of the gallium nitride single crystal. The reduction of the cost of single crystals makes the SnO 2 -based Schottky diode applicable in a wider range.
Drawings
Fig. 1 is a cross-sectional structural view of a schottky barrier diode according to a first embodiment of the present invention;
Fig. 2A is a table showing a comparison of the relationship between the electron carrier concentration, the resistivity, the thickness and the voltage drop of the n-semiconductor layer and the n+ semiconductor layer in the case where the reverse withstand voltage is set to 100V, for the case where Si is used as the semiconductor material and the case where SnO 2 is used as the semiconductor material in the present invention;
Fig. 2B is a table showing a comparison of the relationship between the electron carrier concentration, the resistivity, the thickness and the voltage drop of the n-semiconductor layer and the n+ semiconductor layer in the case where the reverse withstand voltage is set to 600V, for the case where SiC is used as the semiconductor material and the case where SnO 2 is used as the semiconductor material in the present invention;
Fig. 2C is a table showing a relationship between electron carrier concentration, resistivity, thickness and voltage drop of the n-semiconductor layer and the n+ semiconductor layer in the case where the reverse withstand voltage is set to 1000V, for the case where SiC is used as the semiconductor material and the case where SnO 2 is used as the semiconductor material in the present invention;
Fig. 2D is a table showing a comparison of the relationship between the electron carrier concentration, the resistivity, the thickness and the voltage drop of the n-semiconductor layer and the n+ semiconductor layer in the case where the reverse withstand voltage is set to 10000V, for the case where SiC is used as the semiconductor material and the case where SnO 2 is used as the semiconductor material in the present invention;
fig. 3 is a cross-sectional structural view of a schottky barrier diode according to a second embodiment of the present invention.
Wherein the above figures include the following reference numerals:
1. the semiconductor device comprises a Schottky electrode layer, a2 dielectric layer, a 3.N type semiconductor layer, a 31 first semiconductor layer, a 32 second semiconductor layer and a4 ohmic electrode layer.
Detailed Description
So that the manner in which the above recited objects, features and advantages of the present application can be understood in detail, a more particular description of the application, briefly summarized below, may be had by reference to embodiments, some of which are illustrated in the appended drawings. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It should be noted that the terms "comprises" and "comprising," as well as any variations thereof, described in the specification and claims of the present application are intended to cover a non-exclusive inclusion, such as comprising a sequence of layers, regions or process steps that are not necessarily limited to those layers, regions or process steps that are expressly listed or inherent to such structure, but may include layers, regions or process steps that are not expressly listed.
In addition, the embodiments of the present application and the features in the embodiments may be combined with each other without collision.
It should be understood that, in the description and in the claims, when a layer/region is described as being "disposed/stacked" on another layer/region, the layer/region may be "disposed/stacked" directly on the other layer/region, or "disposed/stacked" on the other layer/region through a third layer/region; when a process step is described as being continued to another process step, the process step may be continued directly to the other process step or through a third process step to the other process step.
Fig. 1 is a cross-sectional view of a schottky barrier diode according to a first embodiment of the present invention, wherein the schottky barrier diode includes: an ohmic electrode layer 4; the second semiconductor layer 32, the lower surface of the second semiconductor layer 32 forms ohmic contact with the upper surface of the ohmic electrode layer 4, the second semiconductor layer 32 is an n-type semiconductor layer, and the second semiconductor layer 32 comprises SnO 2 type compound semiconductor materials; the first semiconductor layer 31 is an n-type semiconductor layer, and comprises a SnO 2 -type compound semiconductor material, the concentration of electron carriers is less than or equal to 5×10 17/cm3, when the reverse withstand voltage set by the Schottky barrier diode is 10-10000V, the thickness of the first semiconductor layer 31 is greater than or equal to 0.18 μm and less than or equal to 112 μm, and the concentration of electron carriers of the first semiconductor layer 31 is lower than that of the second semiconductor layer 32; the schottky electrode layer 1, the lower surface of the schottky electrode layer 1 forms a schottky contact with the upper surface of the first semiconductor layer 31.
In the example of fig. 1, the second semiconductor layer 32 corresponds to an n-type heavily doped [ n+ ] SnO 2 substrate layer containing conductive impurities such as Nb or Sb; the SnO 2 substrate layer is formed by slicing and thinning and grinding a bulk single crystal of the SnO 2 single crystal grown by a physical vapor transport method (PVT).
The first semiconductor layer 31 corresponds to an n-type lightly doped n-type SnO 2 epitaxial layer containing conductive impurities such as Nb or Sb; the SnO 2 epitaxial layer is formed by epitaxially growing an n-type lightly doped SnO 2 semiconductor layer on one surface of the SnO 2 substrate layer by adopting a vapor phase epitaxy method such as MOCVD method (metal organic chemical vapor phase epitaxy method).
Different semiconductor materials have different breakdown field strengths Ec, the breakdown field strength of Si is about 40V/μm, and the breakdown field strength of SiC is about 300V/μm, compared with the breakdown field strength of SnO 2 which is about 430V/μm, and the breakdown field strength is higher than that of Si and SiC.
In general, the reverse withstand voltage of a schottky diode is positively correlated with the square of the breakdown field strength and inversely correlated with the electron carrier concentration. Therefore, if the breakdown field strength increases, the reverse withstand voltage increases when the electron carrier concentration is the same. If the same reverse withstand voltage is required, the breakdown electric field strength can be increased to further increase the electron carrier concentration, and the forward on-resistance becomes smaller accordingly, and the forward on-voltage drop [ V F ] becomes smaller accordingly.
Fig. 2A to 2D are comparative tables showing the relationship between the electron carrier concentration, the resistivity, the thickness, and the voltage drop in the case where the current density is set to 200A/cm 2 in the first semiconductor layer (31) [ epitaxial layer ] and the second semiconductor layer (32) [ substrate ], for the case where Si or SiC is used as the semiconductor material and the case where SnO 2 is used as the semiconductor material in the present invention. Fig. 2A is a comparison table in the case where Si and SnO 2 are used and the reverse withstand voltage is set to 100V, fig. 2B is a comparison table in the case where SiC and SnO 2 are used and the reverse withstand voltage is set to 600V, fig. 2C is a comparison table in the case where SiC and SnO 2 are used and the reverse withstand voltage is set to 1000V [ 1kV ], and fig. 2D is a comparison table in the case where SiC and SnO 2 are used and the reverse withstand voltage is set to 10000V [ 10kV ].
As shown in fig. 2A, when the reverse withstand voltage is set to 100V, the electron carrier concentration and thickness of the n-semiconductor layer are 2.47×10 15/cm3 and 7.5 μm in Si, and 2×10 17/cm3 and 0.923 μm in SnO 2 of the first embodiment. Thus, the voltage drop in the n-semiconductor layer is 0.1955V in the case of Si, whereas in the case of SnO 2, 0.0026V. As a result, the total voltage drop including the n-semiconductor layer and the n+ semiconductor layer was 0.2226V in the case of Si and 0.0919V in the case of SnO 2, and the voltage drop was reduced by about 59%.
As shown in fig. 2B, when the reverse withstand voltage is set to 600V, the electron carrier concentration and thickness of the n-semiconductor layer are 2.16x10 16/cm3 and 5.46 μm in SiC, and are 4x10 16/cm3 and 3.07 μm in SnO 2 of the first embodiment. Thus, the voltage drop in the n-semiconductor layer is 0.0345V in the case of SiC, whereas it is 0.0369V in the case of SnO 2. As a result, the total voltage drop including the n-semiconductor layer and the n+ semiconductor layer was 0.0546V in the case of SiC, 0.0667V in the case of SnO 2, and the voltage drop was raised to some extent, about 22%. However, because the value itself is small, the absolute increase in pressure drop is only 0.0121V. At this time, considering SiC single crystal and SnO 2 single crystal, physical vapor transport method [ PVT ] is also adopted for crystal growth, and SnO 2 has only one phase [ tetragonal rutile phase ] stably existing under the condition of crystal growth environment, and SiC has multiple isomers coexisting under the condition of crystal growth, so that the crystal growth yield of SnO 2 single crystal is much higher than that of SiC single crystal. So that the cost of the SnO 2 single crystal is far lower than that of the SiC single crystal, and the cost of the SnO 2 Schottky diode is far lower than that of the SiC Schottky diode based on the Schottky diode manufactured by the single crystal serving as a substrate. Under the condition of equivalent device performance, the SnO 2 -based Schottky diode has lower cost and can have a wider application range.
As shown in fig. 2C, when the reverse withstand voltage is set to 1000V, the electron carrier concentration and thickness of the n-semiconductor layer are 1.3x10 16/cm3 and 9.1 μm in SiC, whereas in SnO 2 of the first embodiment, 2.7x10 16/cm3 and 5.12 μm. Thus, the voltage drop in the n-semiconductor layer is 0.0914V in the case of SiC, while in the case of SnO 2, 0.0911V. As a result, the total voltage drop including the n-semiconductor layer and the n+ semiconductor layer was 0.1115V in the case of SiC, 0.1209V in the case of SnO 2, and the voltage drop was raised to some extent, about 8%. However, because the value itself is small, the absolute increase in pressure drop is only 0.0094V. At this time, considering SiC single crystal and SnO 2 single crystal, physical vapor transport method [ PVT ] is also adopted for crystal growth, and SnO 2 has only one phase [ tetragonal rutile phase ] stably existing under the condition of crystal growth environment, and SiC has multiple isomers coexisting under the condition of crystal growth, so that the crystal growth yield of SnO 2 single crystal is much higher than that of SiC single crystal. So that the cost of the SnO 2 single crystal is far lower than that of the SiC single crystal, and the cost of the SnO 2 Schottky diode is far lower than that of the SiC Schottky diode based on the Schottky diode manufactured by the single crystal serving as a substrate. Under the condition of equivalent device performance, the SnO 2 -based Schottky diode has lower cost and can have a wider application range.
As shown in fig. 2D, when the reverse withstand voltage is set to 1000V, the electron carrier concentration and thickness of the n-semiconductor layer are 1.3x10 15/cm3 and 90.9 μm in SiC, whereas in SnO 2 of the first embodiment, 2.7x10 15/cm3 and 51.2 μm. Thus, the voltage drop in the n-semiconductor layer is 8.1118V in the case of SiC, while in the case of SnO 2, 9.1168V. As a result, the total voltage drop including the n-semiconductor layer and the n+ semiconductor layer was 8.1319V in the case of SiC, 9.1466V in the case of SnO 2, the voltage drop was raised to some extent, about 12%, and the absolute value of the voltage drop was raised only to 1.0147V. At this time, considering SiC single crystal and SnO 2 single crystal, physical vapor transport method [ PVT ] is also adopted for crystal growth, and SnO 2 has only one phase [ tetragonal rutile phase ] stably existing under the condition of crystal growth environment, and SiC has multiple isomers coexisting under the condition of crystal growth, so that the crystal growth yield of SnO 2 single crystal is much higher than that of SiC single crystal. So that the cost of the SnO 2 single crystal is far lower than that of the SiC single crystal, and the cost of the SnO 2 Schottky diode is far lower than that of the SiC Schottky diode based on the Schottky diode manufactured by the single crystal serving as a substrate. Under the condition of equivalent device performance, the SnO 2 -based Schottky diode has lower cost and can have a wider application range.
In general, in order to enable schottky contact that generates a rectifying action between a semiconductor and a metal, electron affinity of the semiconductor needs to be smaller than a work function of the metal that becomes an electrode. As the metal satisfying this relationship, pt, pd, ni, and the like are included.
The ohmic electrode layer is formed on the surface of the second semiconductor layer 32 by vacuum evaporation or sputtering. As a material of the ohmic electrode, ti is selected, for example. In addition, as long as it is a metal having a work function smaller than that of SnO 2 and having an electron affinity, other elements may be used as a material of the ohmic electrode layer.
Fig. 3 is a sectional view of a schottky barrier diode according to a second embodiment, which differs from the schottky barrier diode in fig. 1 in that: a dielectric layer 2 is stacked on the upper surface of the first semiconductor layer 31, and a window is formed on the dielectric layer 2 so as to partially leak out of the upper surface of the first semiconductor layer 31, and the schottky electrode layer 1 is filled in the window and extends to the upper surface of the dielectric layer 2 along the side wall of the window.
Compared with the first embodiment, the embodiment can effectively relieve the electric field concentration effect in the first embodiment, and the electric field lines in the first embodiment are densely distributed at the edges and corners where the schottky electrode is in contact with the first semiconductor layer 31, so that the electric field distribution of the diode is uneven in the above area when the diode is in reverse bias, the possibility of early breakdown exists, meanwhile, the leakage current can be increased, and the embodiment ensures that the electric field distribution in the above area is relatively uniform through the relative action of the schottky electrode and the dielectric layer, the reverse characteristic and the voltage-resisting capability of the diode are improved, and the barrett figure of merit BFOM of the tin oxide diode device tends to an ideal value.
While the preferred embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention, and these are naturally included in the scope of the present invention. For example, in addition to the structure of the embodiment [ vertical ], the schottky diode based on the SnO 2 material may have a lateral structure in which the schottky electrode layer (1) and the ohmic electrode layer (4) are deposited on the same surface side of the n-type semiconductor layer (3).
In order to obtain better device characteristics, the inventor of the present application has obtained the following preferred parameter characteristics through design verification:
(1) The concentration of electron carriers of the second semiconductor layer 32 is 10 times or more higher than that of the first semiconductor layer 31, and at this time, the overall resistance of the n-type semiconductor layer 3 becomes small;
(2) The thickness of the first semiconductor layer 31 is equal to or larger than the width of the depletion layer corresponding to the reverse withstand voltage, and the width of the SnO 2 semiconductor depletion layer is determined in consideration of the reverse withstand voltage and the electron carrier concentration of the first semiconductor layer 31, so that the thickness of the first semiconductor layer 31 needs to be formed wider than the depletion layer width corresponding to the reverse withstand voltage for the required withstand voltage;
(3) The electron carrier concentration of the first semiconductor layer 31 is set according to the reverse withstand voltage required for the schottky barrier diode and the breakdown electric field strength of SnO 2, the electron carrier concentration of the first semiconductor layer 31 of the present invention may be set in a range lower than 5×10 17/cm3, further, the electron carrier concentration of the first semiconductor layer 31 may be set to 5×10 16/cm3 or less, further, the electron carrier concentration of the first semiconductor layer 31 may be set to 5×10 15/cm3 or less;
(4) The electron carrier concentration of the second semiconductor layer 32 is greater than or equal to 5×10 17/cm3, the set value of which depends on the magnitude of the forward voltage of the schottky barrier diode required, the electron carrier concentration of the second semiconductor layer 32 is high, the overall resistance of the n-type semiconductor layer 3 is small, and the forward voltage is small.
According to the present invention, there can be provided a schottky diode based on SnO 2 semiconductor material, which can be applied to a higher reverse withstand voltage scene and can suppress an increase in forward voltage as compared to a schottky diode of Si-based semiconductor material; compared with a Schottky diode made of a SiC-based semiconductor material, the Schottky diode has lower device cost on the premise of equivalent device performance.

Claims (7)

1. A schottky barrier diode comprising, stacked in order from bottom to top:
An ohmic electrode layer (4);
A second semiconductor layer (32), wherein the lower surface of the second semiconductor layer (32) forms ohmic contact with the upper surface of the ohmic electrode layer (4), the second semiconductor layer (32) is an n-type semiconductor layer, and the second semiconductor layer (32) comprises SnO 2 compound semiconductor materials;
A first semiconductor layer (31) which is an n-type semiconductor layer and comprises a SnO 2 -type compound semiconductor material, wherein the concentration of electron carriers is less than or equal to 5 x 10 17/cm3, when the reverse withstand voltage set by the Schottky barrier diode is 10-10000V, the thickness of the first semiconductor layer (31) is more than or equal to 0.18 mu m and less than or equal to 112 mu m, and the concentration of the electron carriers of the first semiconductor layer (31) is lower than the concentration of the electron carriers of the second semiconductor layer (32);
And a Schottky electrode layer (1), wherein the lower surface of the Schottky electrode layer (1) and the upper surface of the first semiconductor layer (31) form Schottky contact.
2. The schottky barrier diode of claim 1 wherein: a dielectric layer (2) is stacked on the upper surface of the first semiconductor layer (31), a window is arranged on the dielectric layer (2), so that part of the dielectric layer leaks out of the upper surface of the first semiconductor layer (31), and the schottky electrode layer (1) is filled in the window and extends to the upper surface of the dielectric layer (2) along the side wall of the window.
3. The schottky barrier diode of claim 1 wherein: the concentration of electron carriers in the second semiconductor layer (32) is 10 times or more higher than that in the first semiconductor layer (31).
4. The schottky barrier diode according to claim 1, wherein the thickness of the first semiconductor layer (31) is equal to or greater than the width of the depletion layer corresponding to the reverse withstand voltage.
5. The schottky barrier diode according to any one of claims 1 to 4, wherein the concentration of electron carriers of the first semiconductor layer (31) is 5 x 10 16/cm3 or less; or the concentration of electron carriers of the first semiconductor layer (31) is 5×10 15/cm3.
6. The schottky barrier diode of claim 5 wherein the concentration of electron carriers of the second semiconductor layer (32) is greater than or equal to 5 x 10 17/cm3.
7. The schottky barrier diode according to any one of claims 1 to 4, wherein the concentration of electron carriers of the second semiconductor layer (32) is 5 x 10 17/cm3 or more.
CN202211280618.9A 2022-10-19 2022-10-19 Schottky barrier diode Pending CN117954504A (en)

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