CN117819982A - High-entropy boride ceramic and preparation method thereof - Google Patents
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- 239000000919 ceramic Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 150000001639 boron compounds Chemical class 0.000 claims abstract description 24
- 239000000126 substance Substances 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims description 99
- 239000002994 raw material Substances 0.000 claims description 43
- 238000005245 sintering Methods 0.000 claims description 38
- 238000000498 ball milling Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 25
- 239000011812 mixed powder Substances 0.000 claims description 16
- 238000005303 weighing Methods 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 8
- 238000001238 wet grinding Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910017262 Mo—B Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 2
- 238000003801 milling Methods 0.000 claims 3
- 239000006104 solid solution Substances 0.000 abstract description 14
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 abstract description 9
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 238000005728 strengthening Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 21
- 239000000463 material Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000010998 test method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011268 mixed slurry Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000001291 vacuum drying Methods 0.000 description 3
- NQTSTBMCCAVWOS-UHFFFAOYSA-N 1-dimethoxyphosphoryl-3-phenoxypropan-2-one Chemical compound COP(=O)(OC)CC(=O)COC1=CC=CC=C1 NQTSTBMCCAVWOS-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000101 transmission high energy electron diffraction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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Abstract
The invention provides a high-entropy boride ceramic and a preparation method thereof, wherein the high-entropy boride ceramic is a single-phase ternary boron compound, and the chemical formula of the ternary boron compound is (W a Mo b ) 2 (Fe x Co y Ni z )B 2 The single-phase structure of the ternary boron compound is represented by Mo 2 NiB 2 And with Mo 2 NiB 2 The standard characteristic peaks of the phases show offset mainly because W and Mo are in solid solution, fe, co and Ni are in solid solution to form high-entropy alloy, so that lattice distortion is caused, thereby generating solid solution strengthening effect, further improving the hardness of boride ceramic.
Description
Technical Field
The invention relates to the technical field of boride, in particular to high-entropy boride ceramic and a preparation method thereof.
Background
Boride has metal-like and ceramic-like properties and is considered as a potential material for replacing conventional cemented carbide due to its excellent wear resistance, corrosion resistance and high temperature stability. However, with the increasing demands on materials and properties in the modern industry, the properties of one-component borides have been difficult to meet.
In 2004, yeh et al and Cantor et al proposed the concept of High Entropy Alloys (HEAs), opening a new era of materials and engineering. HEAs is used as a novel equimolar multi-component solid solution material, and due to the difference of soluble atomic radiuses, the mixed entropy is higher, dislocation is increased, and the HEAs has a plurality of excellent performances such as oxidation resistance, ablation resistance, corrosion resistance, ultra-high hardness and the like. Since 2016, researchers have also studied High Entropy Borides (HEBs).
The Chinese patent document with the application number 201910223884.X discloses a compact superhard high-entropy boride ceramic, a preparation method and application thereof, wherein the method is to prepare a ceramic material by using metal oxide and B 4 C and graphite powder are used as raw materials, high-entropy boride ceramic is prepared by a boron thermal carbon thermal reduction method, and the raw materials are firstly subjected to complete ball milling and mixing and then pressed into a green body; heat treatment to obtain high entropy boride ceramic powder; heating to 1000-1400 deg.C, filling protective atmosphere, heating to 1800-2200 deg.C, calcining to obtain (M) 1x M 2y M 3z M 4n M 5m )B 2 The method needs two steps of heating to prepare the single-phase high-entropy boride, the preparation method is complex, the secondary heating temperature is up to more than 1800 ℃, and the preparation difficulty is increased;
the Chinese patent document with application number 201910726169.8 discloses a boride high-entropy ceramic and a preparation method thereof, wherein simple substance metals Cr, ni, W, mo, ta and B powder are firstly subjected to wet grinding and mixing through planetary ball milling, then the uniformly mixed raw materials are fully dried in a rotary evaporator, finally the uniformly mixed raw materials are subjected to hot-press sintering to prepare a high-entropy ceramic block, and the single-phase (Cr 0.2 Ni 0.2 W 0.2 Mo 0.2 Ta 0.2 ) The ceramic B needs to exert pressure of 20-30MPa in the sintering process, the sintering temperature is still up to 1800 ℃, the requirements on equipment are high, and the manufacturing difficulty and the manufacturing cost are increased.
In summary, the above-mentioned related art has a disadvantage that it is difficult to prepare a single-phase high-entropy boride.
Disclosure of Invention
The invention aims to provide high-entropy boride ceramic and a preparation method thereof, which have simple production process and can prepare single-phase high-entropy boride.
In a first aspect, the present invention provides a high entropy boride ceramic that is a single phase ternary boron compound having the formula (W a Mo b ) 2 (Fe x Co y Ni z )B 2 Wherein the atomic ratio of a to b is (0.4-0.6): (0.4-0.6), a+b=1; the atomic ratio of x, y and z is (0.25-0.32): (0.33-0.4), x+y+z=1.
Optionally, the atomic ratio of a to b is (0.45-0.55): (0.45-0.55), and the atomic ratio of x, y and z is (0.28-0.32): (0.34-0.36).
Alternatively, the atomic ratio of a to b is 0.5:0.5, the atomic ratio of x, y and z is 0.3:0.35:0.35, and the ternary boron compound has the formula (W 0.5 Mo 0.5 ) 2 (Fe 0.3 Co 0.35 Ni 0.35 )B 2 。
Alternatively, the single-phase structure of the ternary boron compound is represented by Mo 2 NiB 2 And with Mo 2 NiB 2 The standard characteristic peaks of the phases show an offset.
Optionally, the ternary boron compound forms a Mo-B covalent bond and a W-B covalent bond.
Alternatively, the ternary boron compound has a Vickers hardness ratio of the compound Mo 2 NiB 2 The height is higher than 20 percent.
In a second aspect, the present invention provides a method for preparing a high-entropy boride ceramic, for preparing the high-entropy boride ceramic, comprising the following preparation steps:
s1, weighing raw material powder according to a proportion, wherein the raw material powder is W powder, mo powder, fe powder, co powder, ni powder and B powder;
s2, ball milling is carried out on the raw material powder, and the raw material powder is evenly mixed to obtain mixed powder;
s3, pressing and sintering, namely pressing the mixed powder into a blank, and sintering to prepare the high-entropy boride ceramic.
Optionally, in step S1, the particle size of the raw material powder is 10 μm or less.
Optionally, in step S2, wet milling is adopted for ball milling, the ball milling rotating speed is 100-400 rpm, the ball milling time is 10-30 h, and the mixed powder is obtained after the ball milling is finished.
Optionally, in step S3, vacuum sintering or inert atmosphere protection sintering is adopted, the sintering temperature is 1350-1500 ℃, and the sintering time is 0.5-3 h.
In summary, the invention has at least one of the following beneficial effects:
1. the high-entropy boride ceramic provided by the invention is a single-phase ternary boron compound, and the chemical formula of the ternary boron compound is (W) a Mo b ) 2 (Fe x Co y Ni z )B 2 The single-phase structure of the ternary boron compound is represented by Mo 2 NiB 2 And with Mo 2 NiB 2 The standard characteristic peaks of the phases show deviations mainly due to solid solution of W and Mo, solid solution of Fe, co and Ni, formation of high entropy alloy, and lattice distortion, thereby generating solid solution strengthening effect, increasing hardness of boride ceramics, and in the subsequent examples, the Vickers hardness ratio of ternary boron compound of the invention was measured as compared with compound Mo 2 NiB 2 The height is higher than 20 percent.
2. The high-entropy boride ceramic provided by the invention has specific components and specific component proportions, and the ternary boride with a single-phase structure is prepared, so that the hardness of the boride ceramic is further improved.
3. The preparation method of the high-entropy boride ceramic provided by the invention has the advantages of simple process and low synthesis temperature, and is suitable for large-scale industrialized popularization and application.
Drawings
FIG. 1 is XRD patterns of samples prepared in example 1 and comparative examples 1 and 2;
FIG. 2 is a TEM image of the sample prepared in example 1;
FIG. 3 is an XPS chart of the sample prepared in example 1;
FIG. 4 is a graph showing five elastic modulus and hardness test curves of the test pieces prepared in example 1;
fig. 5 is an XRD pattern of the sample prepared in comparative example 3.
Detailed Description
The invention provides a high-entropy boride ceramic and a preparation method thereof, and the invention is further described in detail below in order to make the purposes, technical schemes and effects of the invention clearer and more definite. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Currently, research on high entropy boride ceramics is mainly focused on MB 2 Binary borides of the type or MB type, the results show that these materials have better hardness, but still have relatively weak wettability and sinterability, so that the high entropy borides have the disadvantage of being difficult to prepare. Therefore, the inventor originally provides a method for preparing high-entropy boride by reaction activated sintering, which can improve wettability and sinterability of single-phase raw material powder, thereby improving the defect of difficult preparation of the high-entropy boride, and prepares the ternary boride with a single-phase structure by selecting specific element composition and specific proportion based on the principle of high entropy, and has excellent hardness.
In some embodiments of the invention, the high entropy boride ceramic is a single phase ternary boron compound having the formula (W a Mo b ) 2 (Fe x Co y Ni z )B 2 Wherein the atomic ratio of a to b is (0.4-0.6): (0.4-0.6), a+b=1; the atomic ratio of x, y and z is (0.25-0.32): (0.33-0.4), x+y+z=1.
In some embodiments of the invention, the atomic ratio of a to b is (0.45-0.55): (0.45-0.55), and the atomic ratio of x, y and z is (0.28-0.32): (0.34-0.36).
In some embodiments of the invention, the atomic ratio of a to b is 0.5:0.5 and the atomic ratio of x, y and z is 0.3:0.35:0.35, the ternary boron compound having the formula (W) 0.5 Mo 0.5 ) 2 (Fe 0.3 Co 0.35 Ni 0.35 )B 2 。
In some embodiments of the present invention, the single-phase structure of the ternary boron compound exhibits Mo 2 NiB 2 And with Mo 2 NiB 2 The standard characteristic peaks of the phases show an offset.
In some embodiments of the invention, the ternary boron compound forms both Mo-B covalent bonds and W-B covalent bonds.
In some embodiments of the invention, the ternary boron compound is measured for its Vickers hardness compared to the compound Mo 2 NiB 2 The height is higher than 20 percent.
In some embodiments of the present invention, the present invention provides a method for preparing a high entropy boride ceramic, comprising the steps of:
s1, weighing raw material powder according to a proportion, wherein the raw material powder is W powder, mo powder, fe powder, co powder, ni powder and B powder;
s2, ball milling is carried out on the raw material powder, and the raw material powder is evenly mixed to obtain mixed powder;
s3, pressing and sintering, namely pressing the mixed powder into a blank, and sintering to prepare the high-entropy boride ceramic.
In some embodiments of the present invention, in step S1, the particle size of the raw material powder is 10 μm or less.
In some embodiments of the present invention, in step S2, wet milling is used, the rotational speed of the ball milling is 100-400 rpm, the ball milling time is 10-30 hours, and the mixed powder is obtained after the ball milling is finished and drying is performed.
In some embodiments of the present invention, in step S3, vacuum sintering or inert atmosphere protection sintering is used, the sintering temperature is 1350-1500 ℃, and the sintering time is 0.5-3 h.
The present invention will be described in further detail with reference to specific examples and comparative examples. In the specific embodiment of the invention, raw materials are commercially available, and the particle size and specification of each raw material powder are as follows: w powder: about 2 mu m, and the purity is more than or equal to 99.9 percent; mo powder: about 2 mu m, and the purity is more than or equal to 99.9 percent; fe powder: 3-5 mu m, and the purity is more than or equal to 99.5 percent; co powder: 1-3 mu m, and the purity is more than or equal to 99.5 percent; ni powder: 1-3 mu m, and the purity is more than or equal to 99.5 percent; and B, powder: the purity is more than or equal to 99.3 percent and is about 1 mu m.
In the following examples, the chemical formula of the high entropy boride ceramic prepared shows the components and the atomic number ratio of the components, for example, the chemical formula (W 0.5 Mo 0.5 ) 2 (Fe 0.3 Co 0.35 Ni 0.35 )B 2 The atomic ratios of the indicated components and the individual components are as follows: w: mo: fe: co: ni: b= (0.5×2):
(0.5×2)：(0.3×2)：(0.35×2)：(0.35×2)：2＝1:1:0.6:0.7:0.7:2。
example 1
The ternary boride prepared in this example has the formula (W 0.5 Mo 0.5 ) 2 (Fe 0.3 Co 0.35 Ni 0.35 )B 2 Is abbreviated as X 3 B 2 The atomic ratio of a to b is 0.5:0.5, the atomic ratio of x, y and z is 0.3:0.35:0.35, and the specific process steps are as follows:
s1, weighing raw material powder according to the chemical formula, wherein the raw material powder is W powder, mo powder, fe powder, co powder, ni powder and B powder;
s2, ball milling, namely ball milling raw material powder, wherein wet milling is adopted for ball milling, a ball milling medium is stainless steel balls, the ball material ratio is 8:1, absolute ethyl alcohol is adopted as a ball milling solvent, and the adding ratio of the absolute ethyl alcohol to the raw material powder is 0.8ml:1g, ball milling rotating speed is 200rpm, stirring time is 24 hours, after ball milling is finished, taking out the mixed slurry, and vacuum drying at 50 ℃ to obtain mixed powder;
s3, pressing and sintering the pressed compact, pressing and forming the mixed powder under the pressure of 150MPa, then carrying out vacuum sintering for 1h, wherein the sintering vacuum degree is less than or equal to 1Pa, the sintering temperature is 1400 ℃, and after the sintering is finished, cooling along with a furnace, and taking out to obtain a sample A-1.
Comparative example 1
Comparative example 1 was different from example 1 in that the sintering temperature in step S3 was 600℃and the rest of the preparation steps were the same as in example 1, to prepare sample S-1.
Comparative example 2
Comparative example 2 was different from example 1 in that the sintering temperature in step S3 was 1100℃and the rest of the preparation steps were the same as in example 1, to prepare sample S-2.
By X-ray diffractometer (XRD, XRD-7000, shimadzu, japan) Cu K alpha radiation was used at 3℃min -1 The phase structures of the sample A-1 prepared in example 1, the sample S-1 prepared in comparative example 1 and the sample S-2 prepared in comparative example 2 were respectively tested at the step rates, and the results are shown in FIG. 1.
As can be seen from fig. 1, the reaction does not substantially occur when the comparative example 1 is sintered at 600 ℃, and the diffraction peak is mainly attributed to the raw material component, i.e., the phase composition of the sample S-1 detected at this time is simple substance W, mo and small amounts of (Fe, co, ni); comparative example 2 when sintered at 1100 ℃, the raw material powder was not reacted completely, and it can be seen that the sample S-2 obtained was mainly composed of X 3 B 2 And a small amount of incomplete solid solution phase (Fe, co, ni) 7 (W,Mo) 6 (Co, fe, ni) (W, mo) B and simple substance W; when the sintering reaction temperature was raised to 1400℃in example 1, the raw material powder was reacted completely and all diffraction peaks were found to belong to X 3 B 2 Illustrating the formation of a single-phase ternary boron compound, X of a single-phase structure 3 B 2 Expressed as Mo 2 NiB 2 Of the type, it is worth mentioning that with Mo 2 NiB 2 Phase standard card phase X 3 B 2 The XRD diffraction peaks of (2) show an offset, and atoms of the same size and nature are easily substituted for each other according to the basic principle of crystallography and basic rule of atom substitution, so that W replaces part of Mo, fe and Co replace part of Ni to form (W) 0.5 Mo 0.5 ) 2 (Fe 0.3 Co 0.35 Ni 0.35 )B 2 Solid solutions.
As can be seen from the EDS elemental analysis of FIG. 2 (a), the TEM characterization of sample A-1 prepared in example 1 shows that all of the elements B, fe, co, ni, W and Mo in sample A-1 are uniformly distributed, thereby also verifying that the above-mentioned (W) 0.5 Mo 0.5 ) 2 (Fe 0.3 Co 0.35 Ni 0.35 )B 2 Solid solution structure. FIG. 2 (b) provides selected electron region diffraction (SAED) of sample A-1, sharp diffraction spots revealing single crystal properties of the selected region, the angle and distance of the diffraction points being [1 ] based on the SAED result _ 11 _ ]The crystal axis is an indicator and the results are consistent with the crystal structure observed in XRD results.
To investigate the chemical complexes and bonding of sample a-1 of example 1, XPS characterization was performed after calibration by the C1s peak at 284.6eV, the Binding Energies (BEs) of Mo and W are shown in fig. 3 (a) and 3 (b), respectively. As can be seen from FIG. 3 (a), in Mo 3d 5/2 And Mo 3d 3/2 Two characteristic peaks of 227.65eV and 230.80eV are observed on the orbitals, respectively, and the binding energy of Mo in sample A-1 is higher compared with that of the element Mo, indicating the covalent nature of the Mo-B bond. Likewise, a similar phenomenon can be seen from FIG. 3 (B), indicating the covalent nature of the W-B bond.
The Vickers hardness (HV, model HVS-1000A) was measured at 5 different locations on the surface of sample A-1 of example 1 using a Vickers indenter with a load of 0.05kg, and the average was calculated to give a hardness of 26.1GPa for sample A-1 of example 1, which is higher than that of the prior report (Y.Jian, Z.Huang, X.Liu, J.Xing, "Comparative investigation on the stability, electronic structures and mechanical properties of Mo 2 FeB 2 and Mo 2 NiB 2 ternary borides by first-principles calculations ', "Results in Physics 15 (2019) 102698', mo, a typical compound 2 NiB 2 The height was 27.9%.
In addition, the hardness and elastic modulus of sample A-1 of example 1 were determined using a nanoindentation test system (G200, KLA Co., ltd.) equipped with a Berkovich diamond indenter, which set the indentation depth to 500nm, and five indentations were made for the average hardness value. According to the load-displacement curve shown in FIG. 4, the elastic modulus and hardness of sample A-1 of example 1 were measured as 512.0.+ -. 7.3GPa and 25.6.+ -. 0.7GPa, respectively.
Example 2
Example 2 differs from example 1 in that the ternary product prepared in example 2Boride has the chemical formula (W) 0.4 Mo 0.6 ) 2 (Fe 0.28 Co 0.34 Ni 0.38 )B 2 The atomic ratio of a to b is 0.4:0.6, the atomic ratio of x, y and z is 0.28:0.34:0.38, and the process steps are as follows:
s1, weighing raw material powder according to the chemical formula, wherein the raw material powder is W powder, mo powder, fe powder, co powder, ni powder and B powder;
s2, ball milling, namely ball milling raw material powder, wherein wet milling is adopted for ball milling, a ball milling medium is stainless steel balls, the ball material ratio is 8:1, absolute ethyl alcohol is adopted as a ball milling solvent, and the adding ratio of the absolute ethyl alcohol to the raw material powder is 0.8ml:1g, ball milling rotating speed is 300rpm, stirring time is 20h, after ball milling is finished, taking out the mixed slurry, and vacuum drying at 50 ℃ to obtain mixed powder;
s3, performing compact sintering, namely performing compression molding on the mixed powder under the pressure of 150MPa, performing vacuum sintering for 1.5h, wherein the sintering vacuum degree is less than or equal to 1Pa, the sintering temperature is 1450 ℃, and taking out the mixed powder after cooling along with a furnace, so as to obtain a sample A-2.
The XRD phase structure of sample A-2 was tested using the same test method as in example 1, and the test result showed that the phase of sample A-2 was single-phase X 3 B 2 And X is 3 B 2 Expressed as Mo 2 NiB 2 With Mo 2 NiB 2 Phase standard card phase X 3 B 2 The XRD diffraction peaks of (C) showed an offset, indicating that the solid solution of W, co, fe caused a change in lattice constant, resulting in (W 0.4 Mo 0.6 ) 2 (Fe 0.28 Co 0.34 Ni 0.38 )B 2 Solid solutions. The hardness of the sample A-2 was 24.4Gpa by the Vickers hardness method similar to that of example 1.
Example 3
Example 3 differs from example 1 in that the ternary boride prepared in example 3 has the formula (W 0.6 Mo 0.4 ) 2 (Fe 0.31 Co 0.36 Ni 0.33 )B 2 The atomic ratio of a to b is 0.6:0.4, the atomic ratio of x, y and z is 0.31:0.36:0.33, and the process steps are as follows:
s1, weighing raw material powder according to the chemical formula, wherein the raw material powder is W powder, mo powder, fe powder, co powder, ni powder and B powder;
s2, ball milling, namely ball milling raw material powder, wherein wet milling is adopted for ball milling, a ball milling medium is stainless steel balls, the ball material ratio is 8:1, absolute ethyl alcohol is adopted as a ball milling solvent, and the adding ratio of the absolute ethyl alcohol to the raw material powder is 0.8ml:1g, ball milling rotating speed is 150rpm, stirring time is 28h, after ball milling is finished, taking out the mixed slurry, and vacuum drying at 50 ℃ to obtain mixed powder;
s3, compacting and sintering, namely compacting and forming the mixed powder under the pressure of 150MPa, then carrying out vacuum sintering for 0.8h, wherein the vacuum degree is less than or equal to 1Pa, the sintering temperature is 1500 ℃, cooling along with a furnace after the sintering is finished, and taking out to obtain a sample A-3.
The XRD phase structure of sample A-3 was measured by the same test method as in example 1, and the test result showed that the phase of sample A-3 was single-phase X 3 B 2 And X is 3 B 2 Expressed as Mo 2 NiB 2 With Mo 2 NiB 2 Phase standard card phase X 3 B 2 The XRD diffraction peaks of (C) showed an offset, indicating that the solid solution of W, co, fe caused a change in lattice constant, resulting in (W 0.6 Mo 0.4 ) 2 (Fe 0.31 Co 0.36 Ni 0.33 )B 2 Solid solutions. The hardness of sample A-3 was measured to be 25.36Gpa by the Vickers hardness method similar to that of example 1.
Comparative example 3
Comparative example 3 is different from example 1 in that the ternary boride prepared in comparative example 3 has the chemical formula (W 0.5 Mo 0.5 ) 2 (Fe 0.35 Co 0.325 Ni 0.325 )B 2 The atomic ratio of a to b is 0.5:0.5, the atomic ratio of x, y and z is 0.35:0.325:0.325, the process steps are as follows:
s1, weighing raw material powder according to the chemical formula, wherein the raw material powder is W powder, mo powder, fe powder, co powder, ni powder and B powder; the remaining preparation procedure was the same as in example 1 to obtain sample S-3.
The XRD phase structure of sample S-3 was measured in the same manner as in example 1 and shown in FIG. 5, and the test result showed that the phase of sample S-3 was X 3 B 2 And (Fe, co, ni) 7 (W,Mo) 6 The hardness of sample S-3 was measured to be 22.4Gpa by the Vickers hardness method similar to that of example 1.
Comparative example 4
Comparative example 4 is different from example 1 in that the ternary boride prepared in comparative example 4 has the chemical formula (W 0.75 Mo 0.25 ) 2 (Fe 0.3 Co 0.35 Ni 0.35 )B 2 The atomic ratio of a to b is 0.75:0.25, the atomic ratio of x, y and z is 0.3:0.35:0.35, and the process steps are as follows:
s1, weighing raw material powder according to the chemical formula, wherein the raw material powder is W powder, mo powder, fe powder, co powder, ni powder and B powder; the remaining preparation procedure was the same as in example 1 to obtain sample S-4.
The XRD phase structure of sample S-4 was measured by the same test method as in example 1, and the test result showed that the phase of S-4 was X 3 B 2 And (Fe, co, ni) 7 (W,Mo) 6 The hardness of sample S-4 was measured to be 21.72Gpa by the Vickers hardness method similar to that of example 1.
Comparative example 5
Comparative example 5 is different from example 1 in that the ternary boride prepared in comparative example 5 has the chemical formula (W 0.75 Mo 0.25 ) 2 (Fe 0.25 Co 0.25 Ni 0.5 )B 2 The atomic ratio of a to b is 0.75:0.25, the atomic ratio of x, y and z is 0.25:0.25:0.5, and the process steps are as follows:
s1, weighing raw material powder according to the chemical formula, wherein the raw material powder is W powder, mo powder, fe powder, co powder, ni powder and B powder; the remaining preparation procedure was the same as in example 1 to obtain sample S-5.
The XRD phase structure of sample S-5 was measured by the same test method as in example 1, and the test result showed that the phase of sample S-5 included X 3 B 2 Sum (Fe, co, ni) 7 (W,Mo) 6 The same Vickers as in example 1 was usedHardness of sample S-5 was measured by the hardness method and found to be 20.88Gpa.
It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (10)
1. The high-entropy boride ceramic is characterized by being a single-phase ternary boron compound, wherein the chemical formula of the ternary boron compound is (W a Mo b ) 2 (Fe x Co y Ni z )B 2 Wherein the atomic ratio of a to b is (0.4-0.6): (0.4-0.6), a+b=1; the atomic ratio of x, y and z is (0.25-0.32): (0.33-0.4), x+y+z=1.
2. The high entropy boride ceramic of claim 1, wherein the atomic ratio of a to b is (0.45-0.55): (0.45-0.55), and the atomic ratio of x, y and z is (0.28-0.32): (0.34-0.36).
3. The high entropy boride ceramic of claim 2, wherein the atomic ratio of a to b is 0.5:0.5, the atomic ratio of x, y and z is 0.3:0.35:0.35, and the ternary boron compound has the formula (W 0.5 Mo 0.5 ) 2 (Fe 0.3 Co 0.35 Ni 0.35 )B 2 。
4. A high entropy boride ceramic according to any one of claims 1 to 3, wherein the single phase structure of the ternary boron compound is represented by Mo 2 NiB 2 And with Mo 2 NiB 2 The standard characteristic peaks of the phases show an offset.
5. A high entropy boride ceramic according to any one of claims 1 to 3, wherein the ternary boron compound forms Mo-B and W-B covalent bonds.
6. A high entropy boride ceramic according to any one of claims 1 to 3, wherein the ternary boron compound has a vickers hardness ratio of compound Mo 2 NiB 2 The height is higher than 20 percent.
7. A method for preparing the high-entropy boride ceramic, which is used for preparing the high-entropy boride ceramic according to any one of claims 1 to 6, and is characterized by comprising the following preparation steps:
s1, weighing raw material powder according to a proportion, wherein the raw material powder is W powder, mo powder, fe powder, co powder, ni powder and B powder;
s2, ball milling is carried out on the raw material powder, and the raw material powder is evenly mixed to obtain mixed powder;
s3, pressing and sintering, namely pressing the mixed powder into a blank, and sintering to prepare the high-entropy boride ceramic.
8. The method for producing a high-entropy boride ceramic according to claim 7, wherein in step S1, the particle size of the raw material powder is 10 μm or less.
9. The method for preparing high-entropy boride ceramic according to claim 7, wherein in step S2, wet milling is adopted, the milling speed is 100-400 rpm, the milling time is 10-30 h, and the mixed powder is obtained by drying after the milling is finished.
10. The method for preparing high-entropy boride ceramic according to claim 7, wherein in step S3, vacuum sintering or inert atmosphere protection sintering is adopted, the sintering temperature is 1350-1500 ℃, and the sintering time is 0.5-3 h.
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