CN117810331A - Light emitting diode chip, light emitting diode and light emitting device - Google Patents

Abstract

The application providing a kind of a light-emitting diode chip light emitting diode a light emitting device. The LED chip comprises an epitaxial structure and a plurality of conductive holes arranged in the epitaxial structures, the geometric center point of the epitaxial structure is taken as a center point, the conductive holes are distributed in the circumferential direction of similar patterns of a plurality of concentric points, the distance difference between adjacent similar patterns and the center point is gradually reduced along the linear direction from the geometric center point of the epitaxial structure to the edge of the similar patterns, the uniformity of current diffusion in the LED chip can be effectively improved by changing the distribution rule of the conductive holes, the current is prevented from being concentrated in a certain area of the LED chip, and the light efficiency of the LED chip is improved; and simultaneously, the performance and the reliability of the light-emitting diode chip are improved.

Description

Light emitting diode chip, light emitting diode and light emitting device

Technical Field

The invention relates to the technical field of semiconductor devices, and more particularly, to a light emitting diode chip, a light emitting diode, and a light emitting device.

Background

A light emitting diode (Light Emitting Diode, LED) chip is a solid state light emitting device, the LED display has the characteristics of high efficiency, low power consumption, long service life, vibration resistance, high reliability and the like, and can be applied to the fields of displays, illumination, optical communication and the like.

In the lighting market such as vehicle lamps and flashlights, the light emitting diode chip needs a high output, so that the current required to be generated per unit area of the light emitting diode chip is relatively large. However, due to the limitation of the semiconductor material characteristics of the light emitting diode chip, the current concentration in the local area of the light emitting diode chip can be caused by the larger current density, so that the light emitting surface of the light emitting diode chip emits light unevenly; while a local area current density that is too high may result in an increase in temperature in that area, an excessive temperature may negatively impact the performance and reliability of the light emitting diode chip.

In order to improve current diffusion uniformity of the light emitting diode chip and improve performance and reliability of the light emitting diode chip, the application provides the light emitting diode chip, the light emitting diode and the light emitting device.

Disclosure of Invention

In view of the defects and shortcomings of the light emitting diode chip in the prior art, the application provides a light emitting diode chip, a light emitting diode and a light emitting device. According to the LED chip, the plurality of conductive holes are arranged in the epitaxial structure, the geometric center point of the epitaxial structure is taken as the center point, the plurality of conductive holes are distributed on the circumferences of the similar patterns of the plurality of concentric points, and the distance difference between the adjacent similar patterns and the center point is gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the edge of the similar patterns, so that the current in the LED chip can be effectively prevented from being concentrated in a certain area, the uniformity of current diffusion in the LED chip is improved, and the light efficiency of the LED chip is improved; and simultaneously, the performance and the reliability of the light-emitting diode chip are improved.

In an embodiment of the present application, there is provided a light emitting diode chip including:

the epitaxial structure at least comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein the second semiconductor layer is provided with a first surface and a second surface which are oppositely arranged, the first surface of the second semiconductor layer is connected with the active layer, and the second surface of the second semiconductor layer faces away from the active layer;

a plurality of conductive vias disposed in the epitaxial structure and penetrating the second semiconductor layer, the active layer, and a portion of the first semiconductor layer;

and the conducting holes are distributed on the circumferences of similar patterns of the concentric points by taking the geometric center point of the epitaxial structure as the center point, and the distance difference between the adjacent similar patterns and the center point is gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the edge of the epitaxial structure.

According to a further embodiment of the present application, there is provided a light emitting diode including:

the epitaxial structure at least comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein the second semiconductor layer is provided with a first surface and a second surface which are oppositely arranged, the first surface of the second semiconductor layer is connected with the active layer, and the second surface of the second semiconductor layer faces away from the active layer;

a plurality of conductive vias disposed in the epitaxial structure and penetrating the second semiconductor layer, the active layer, and a portion of the first semiconductor layer;

and the conducting holes are distributed on the circumferences of similar patterns of the concentric points by taking the geometric center point of the epitaxial structure as the center point, and the distance difference between the adjacent similar patterns and the center point is gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the edge of the epitaxial structure.

According to still another embodiment of the present application, there is provided a light emitting device including the light emitting diode chip described herein or the light emitting diode described herein.

As described above, the light emitting diode chip, the light emitting diode and the light emitting device of the present application have the following beneficial effects:

the LED chip takes the geometric center point of the epitaxial structure as the center point, a plurality of conductive holes are distributed on the circumferences of the similar patterns of the concentric points, the distance difference between the adjacent similar patterns and the center point is gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the peripheral edge of the epitaxial structure, the uniformity of current diffusion in the LED chip can be effectively improved, the current is prevented from being concentrated in a certain area of the LED chip, and the light efficiency of the LED chip is improved; and simultaneously, the performance and the reliability of the light-emitting diode chip are improved.

Drawings

Fig. 1 is a schematic structural diagram of a light emitting diode chip in the prior art.

Fig. 2 is a schematic structural diagram of another led chip in the prior art.

Fig. 3 is a schematic cross-sectional view of a light emitting diode chip according to an embodiment of the invention.

Fig. 4 is a schematic top view of a light emitting diode chip according to a second embodiment of the invention.

Fig. 5 is a schematic top view of another led chip according to the second embodiment of the present invention.

Fig. 6 is a schematic top view of a light emitting diode chip according to a third embodiment of the present invention.

Fig. 7 is a schematic top view of another led chip according to the third embodiment of the present invention.

Fig. 8 is a schematic cross-sectional view of a light emitting diode according to a fourth embodiment of the present invention.

Fig. 9 is a schematic cross-sectional view of a light emitting device according to a fifth embodiment of the present invention.

Description of element reference numerals

001, epitaxial structure; 002, conductive holes; 003, a first electrical connection layer; 004, a first electrode; 005, center of circle; 006, 1 st ring; 007, 2 nd ring; 008, 3 rd ring; 009, 4 th ring; 010, a center point; 011, 1 st square; 012, square 2; 013, square 3; 014, square 4; 021, circuit board; 022, a light emitting unit; 100, an epitaxial structure; 110, a first semiconductor layer; 120, an active layer; 130, a second semiconductor layer; 200, conductive holes; 201, a center point; 210, 1 st similar pattern; 220, the 2 nd similar pattern; 230, 3 rd similar pattern; 300, a first electrical connection layer; 310, a first mesa; 400, a first electrode; 500, an insulating layer; 600, a second electrical connection layer; 700, a second electrode; 800a, a current spreading layer; 800b, a reflective layer; 800c, a protective layer; 900, a substrate.

Detailed Description

Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.

The application provides a light emitting diode chip, comprising:

the epitaxial structure at least comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein the second semiconductor layer is provided with a first surface and a second surface which are oppositely arranged, the first surface of the second semiconductor layer is connected with the active layer, and the second surface of the second semiconductor layer faces away from the active layer;

a plurality of conductive vias disposed in the epitaxial structure and penetrating the second semiconductor layer, the active layer, and a portion of the first semiconductor layer;

and the conducting holes are distributed on the circumferences of similar patterns of the concentric points by taking the geometric center point of the epitaxial structure as the center point, and the distance difference between the adjacent similar patterns and the center point is gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the edge of the epitaxial structure.

According to the LED chip provided by the embodiment, the geometric center point of the epitaxial structure is taken as the center point, a plurality of conductive holes are distributed on the circumferences of the similar patterns of the same center points, the distances from the adjacent similar patterns to the center point are gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the peripheral edge of the epitaxial structure, the uniformity of current diffusion of the LED chip can be effectively improved, the current is prevented from being concentrated in a certain area of the LED chip, and the light efficiency of the LED chip is improved; and simultaneously, the performance and the reliability of the light-emitting diode chip are improved.

In some embodiments, along the direction of the straight line from the geometric center point of the epitaxial structure to the edge of the epitaxial structure, the similar patterns of the concentric points are respectively defined as a1 st similar pattern, a2 nd similar pattern, … …, an n-2 nd similar pattern, an n-1 st similar pattern and an n-th similar pattern, wherein the difference between the distance from the n-1 st similar pattern to the center point and the distance from the n-1 st similar pattern to the center point is Ln-1, and the difference between the distance from the n-1 st similar pattern to the center point and the distance from the n-2 nd similar pattern to the center point is Ln-1; wherein Ln is 70% -100% of Ln-1, and n is an integer greater than or equal to 2.

According to the embodiment, the uniformity of current diffusion of the light-emitting diode chip is further improved by limiting the change rule of the distance difference between the adjacent similar patterns and the central point, the light efficiency of the light-emitting diode chip is improved, and the performance and the reliability of the light-emitting diode chip are improved.

In some embodiments, the distance from the 1 st similar pattern to the center point is L1, the difference between the distance from the 2 nd similar pattern to the center point and L1 is L2, and L2 is 70% -100% of L1.

The light emitting diode chip of the present embodiment can obtain L2, L3, … …, ln, and the like in order according to the set L1.

In some embodiments, the L1 is between 100 μm and 300 μm.

In some embodiments, the geometric center point of the epitaxial structure is provided with the conductive via, or the conductive via is not provided.

In some embodiments, the difference between the distance of the nth similar pattern from the center point and the distance of the edge of the epitaxial structure from the center point is between 50 μm and 300 μm.

In some embodiments, a plurality of the conductive vias located in the same similar pattern are uniformly spaced apart.

In this embodiment, the conductive holes in the circumferential direction of the similar pattern are uniformly distributed at intervals, which is favorable for further uniform diffusion of the current of the light emitting diode chip, and further improves the light efficiency, performance and reliability of the light emitting diode chip.

In some embodiments, the distance between geometric center points of adjacent conductive vias located in the same similar pattern perimeter is between 100 μm and 400 μm.

In some embodiments, the conductive pores have a pore size of 20 μm to 60 μm.

In some embodiments, the light emitting diode chip further includes a first electrical connection layer electrically connected to the second surface of the second semiconductor layer, the first electrical connection layer having a first mesa on a side of the first electrical connection layer proximate to the second semiconductor layer that is not covered by the epitaxial structure, the first mesa having a first electrode disposed thereon.

In some embodiments, the light emitting diode chip further includes a second electrical connection layer and a second electrode electrically connected to the second electrical connection layer, the second electrical connection layer being electrically connected to the first semiconductor layer through the conductive via; the second electrical connection layer covers at least a side of the first electrical connection layer facing away from the second semiconductor layer.

In some embodiments, an inner wall of the conductive via and a side of the first electrical connection layer facing away from the second semiconductor layer are provided with an insulating layer, the first electrical connection layer and the second electrical connection layer being electrically insulated from each other by the insulating layer.

In some embodiments, a current spreading layer, a reflective layer, and a protective layer are stacked in order from the second surface of the second semiconductor layer, between the second semiconductor layer and the first electrical connection layer, corresponding to the epitaxial structure.

In some embodiments, the first electrical connection layer has a square profile, the epitaxial structure has a circular profile, and the first electrode has a patterned structure in the shape of an "L".

In some embodiments, the first electrical connection layer has a square profile, the epitaxial structure has a square profile, and the first electrode has a square profile.

Another embodiment of the present application provides a light emitting diode, including:

the epitaxial structure at least comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein the second semiconductor layer is provided with a first surface and a second surface which are oppositely arranged, the first surface of the second semiconductor layer is connected with the active layer, and the second surface of the second semiconductor layer faces away from the active layer;

a plurality of conductive vias disposed in the epitaxial structure and penetrating the second semiconductor layer, the active layer, and a portion of the first semiconductor layer;

and the conducting holes are distributed on the circumferences of similar patterns of the concentric points by taking the geometric center point of the epitaxial structure as the center point, and the distance difference between the adjacent similar patterns and the center point is gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the edge of the epitaxial structure.

According to the light emitting diode of the embodiment, the geometric center point of the epitaxial structure is taken as the center point, the plurality of conductive holes are distributed on the circumferences of the similar patterns of the plurality of concentric points, the distances from the adjacent similar patterns to the center point are gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the peripheral edge of the epitaxial structure, the uniformity of current diffusion of the light emitting diode can be effectively improved, the current in the light emitting diode is prevented from being concentrated in a certain area, and the brightness and the light emitting uniformity of the light emitting diode are further improved.

In some embodiments, along the direction of the straight line from the geometric center point of the epitaxial structure to the edge of the epitaxial structure, the similar patterns of the concentric points are respectively defined as a1 st similar pattern, a2 nd similar pattern, … …, an n-2 nd similar pattern, an n-1 st similar pattern and an n-th similar pattern, wherein the difference between the distance from the n-1 st similar pattern to the center point and the distance from the n-1 st similar pattern to the center point is Ln-1, and the difference between the distance from the n-1 st similar pattern to the center point and the distance from the n-2 nd similar pattern to the center point is Ln-1; wherein Ln is 70% -100% of Ln-1, and n is an integer greater than or equal to 2.

Still another embodiment of the present application provides a light emitting device, including a circuit board and a plurality of light emitting units disposed on the circuit board, the light emitting units include the light emitting diode chip provided herein or the light emitting diode provided herein.

According to the light emitting unit of the light emitting device, the light emitting diode chip or the light emitting diode provided by the application is adopted, and the light emitting diode chip or the light emitting diode takes the geometric center point of the epitaxial structure as the center point, a plurality of conductive holes are distributed on the circumferences of similar patterns of a plurality of concentric points, the distance difference between the adjacent similar patterns and the center point is gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the peripheral edge of the same, so that the brightness and the uniformity of light emitted by the light emitting device can be improved, and the performance and the reliability of the light emitting device are improved.

Fig. 1 shows a light emitting diode chip in the prior art, which includes an epitaxial structure 001 and a plurality of conductive holes 002 disposed in the epitaxial structure 001, wherein the epitaxial structure 001 includes a first semiconductor layer, an active layer and a second semiconductor layer (not shown) sequentially stacked from top to bottom, and the conductive holes 002 penetrate through the second semiconductor layer, the active layer and a part of the first semiconductor layer; the semiconductor device further comprises a first electric connection layer 003 electrically connected with the lower surface of the second semiconductor layer, a table top is formed at the position, which is close to one side of the second semiconductor layer and is not covered by the epitaxial structure 001, of the first electric connection layer 003, and a first electrode 004 is arranged on the table top; the first electrical connection layer 003 has a square profile and the epitaxial structure 001 has a circular profile. The plurality of conductive holes 002 are distributed on the circumference of a plurality of concentric circles (the geometric center point of the conductive holes 002 is on the circumference, the following conductive holes are distributed on the circumference of a similar pattern or square, the geometric center point of the conductive holes is also on the circumference of the similar pattern or square), the plurality of concentric circles are defined as A1 st circle 006, A2 nd circle 007, A3 rd circle 008 and A4 th circle 009 (the number of concentric circles in the example of fig. 1 is 4, the number of concentric circles is set according to actual needs), the radius of the 1 st circle 006 is A1, the radius difference between the 2 nd circle 007 and the 1 st circle 006 is A2, the radius difference between the 3 rd circle 008 and the 2 nd circle 007 is A3, the radius difference between the 4 th circle 009 and the 3 rd circle 008 is A4, wherein, A1, A2, A3 and A4 are equal.

Fig. 2 shows another light emitting diode chip in the prior art, which also includes an epitaxial structure 001, a plurality of conductive vias 002 disposed in the epitaxial structure 001, a first electrical connection layer 003 electrically connected to the lower surface of a second semiconductor layer in the epitaxial structure 001, and a first electrode 004 disposed on a mesa formed by the first electrical connection layer 003 not covered by the epitaxial structure 001; the first electrical connection layer 003 has a square outline, and the epitaxial structure 001 has a square outline. With the geometric center point (i.e., the center point 010 of the square) of the epitaxial structure 001 as the center point, the plurality of conductive holes 002 are distributed in the circumferential direction of the similar squares of the concentric points, the straight line direction from the center point 010 of the epitaxial structure 001 to the peripheral edge of the epitaxial structure 001 defines a plurality of similar squares of the concentric points as 1 st square 011, 2 nd square 012, 3 rd square 013 and 4 th square 014 (the number of similar squares of the concentric points in the example of fig. 2 is 4, and the number of similar squares of the concentric points is set according to actual needs), the distance from the 1 st square 011 to the center point 010 is B1, the difference between the distance from the 2 nd square 012 to the center point 010 and the B1 is B2, the difference between the distance from the 3 rd square 013 to the center point 010 and the distance from the 2 nd square 012 to the center point 010 is B3, and the difference between the distance from the 4 th square 014 to the center point 010 and the distance from the 4 th square 014 to the center point 010 is B4, wherein, B1, B2, B3 and B4 are equal. The direction in which the distance from the 1 st square to the center point 010 is measured, the direction in which the distance from the 2 nd square 012 to the center point 010 is measured, the direction in which the distance from the 3 rd square 013 to the center point 010 is measured, and the direction in which the distance from the 4 th square 014 to the center point 010 is measured are all in the same direction.

The light emitting diode chips illustrated in fig. 1 and 2 have a phenomenon that current is concentrated in a middle region, resulting in uneven light emission of the light emitting diode chips; meanwhile, as the current is concentrated in the middle area of the light-emitting diode chip, the heat in the middle area is high, and the performance and the reliability of the light-emitting diode chip are negatively affected by the excessively high temperature.

In view of the above drawbacks, the present application provides a light emitting diode chip and a light emitting device. The following examples are now presented in detail.

Example 1

The present embodiment provides a light emitting diode chip, as shown in fig. 3, which includes an epitaxial structure 100 and a plurality of conductive vias 200 disposed in the epitaxial structure 100. The epitaxial structure 100 at least includes a first semiconductor layer 110, an active layer 120 and a second semiconductor layer 130 stacked sequentially from top to bottom, the second semiconductor layer 130 has a first surface and a second surface disposed opposite to each other, the first surface defining the second semiconductor layer 130 is connected to the active layer 120, and the second surface of the second semiconductor layer 130 faces away from the active layer 120. The conductive via 200 penetrates the second semiconductor layer 130, the active layer 120, and a portion of the first semiconductor layer 110; the geometric center point of the epitaxial structure 100 is taken as a center point 201 (the geometric center point of the epitaxial structure 100 refers to the geometric center point of a cross section obtained by transversely cutting the epitaxial structure 100 in the horizontal direction when the epitaxial structure 100 includes the conductive holes 200), the conductive holes 200 are distributed in the circumferential directions of a plurality of similar patterns with the center point 201, and the distance difference between adjacent similar patterns and the center point 201 is gradually reduced along the linear direction from the geometric center point of the epitaxial structure 100 to the edge of the epitaxial structure, that is, the distance difference between the edges of the adjacent similar patterns and the center point is gradually reduced in the same direction (the distance between the edges of the similar patterns and the center point in the application refers to the distance between the edges of the similar patterns and the center point). It will be appreciated that the similar pattern has a regular shape and is a symmetrical center pattern about the center point 201, the contour of the similar pattern being related to the contour of the epitaxial structure 100. According to the embodiment, the distance difference from the conducting holes 200 to the center point 201 in the circumferential direction of the adjacent similar patterns is gradually reduced by setting the straight line direction from the geometric center point of the epitaxial structure 100 to the edge of the epitaxial structure, so that the uniformity of current diffusion of the light-emitting diode chip can be effectively improved, the current of the light-emitting diode chip is prevented from being concentrated in a certain area, and the brightness and the uniformity of light emission of the light-emitting diode chip are further improved; meanwhile, local temperature rise caused by the fact that the current of the light-emitting diode chip is concentrated in a certain area is avoided, and the performance and reliability of the light-emitting diode chip are improved.

The first semiconductor layer 110 is an N-type semiconductor layer that provides electrons by N-type doping, and the N-type semiconductor layer may be formed by doping a semiconductor, for example Si, ge, sn, se, te, or the like; the second semiconductor layer 130 is a P-type semiconductor layer that provides holes by P-type doping, and the formation of the P-type semiconductor layer may be doping, for example Mg, zn, ca, sr, ba, etc., in the semiconductor; the active layer 120 provides radiation for electron and hole recombination, and the active layer 120 is a multiple quantum well layer.

In an alternative embodiment, the plurality of similar patterns of the concentric points 201 are defined as the 1 st similar pattern, the 2 nd similar pattern, … …, the n-2 nd similar pattern, the n-1 st similar pattern and the n-th similar pattern, respectively, along a straight line direction from the geometric center point of the epitaxial structure 100 to the peripheral edge of the epitaxial structure 100, the difference between the distance from the n-th similar pattern to the center point 201 and the distance from the n-1-th similar pattern to the center point 201 is Ln, the difference between the distance from the n-1-th similar pattern to the center point 201 and the distance from the n-2-th similar pattern to the center point 201 is Ln-1, ln is 70% -100% of Ln-1, n is an integer greater than or equal to 2, and L1 is the distance from the 1 st similar pattern to the center point 201. Alternatively, for example, ln is 70%, 75%, 80%, 85%, 90%, 95%, 99% of Ln-1, etc., it being understood that Ln is not equal to Ln-1. Taking fig. 3 as an example for illustration, the 3 similar patterns including the 3 st similar pattern 210, the 2 nd similar pattern 220, and the 3 rd similar pattern 230 in fig. 3 (the similar patterns depicted by the dotted lines only represent the edges of the similar patterns, and do not represent the shapes of the similar patterns), the difference between the distance from the 3 rd similar pattern 230 to the center point 201 and the distance from the 2 nd similar pattern 220 to the center point 201 is L3, the difference between the distance from the 2 nd similar pattern 220 to the center point 201 and the distance from the 1 st similar pattern 210 to the center point 201 is L2, L3 < L2, and L3 is 70% -100% of L2. Along the geometric center point of the epitaxial structure 100 to the peripheral edge of the epitaxial structure 100, L3 may be the difference in distance from the geometric center point of the conductive via 200 located in the 3 rd similar pattern 230 to the geometric center point of the conductive via 200 located in the 2 nd similar pattern 220, and L2 may be the difference in distance from the geometric center point of the conductive via 200 located in the 2 nd similar pattern 220 to the geometric center point of the conductive via 200 located in the 1 st similar pattern 210, in the same direction as shown in fig. 3. According to the defined relation between Ln and Ln-1, the uniformity of current diffusion of the light emitting diode chip can be further improved, and further the brightness and uniformity of light emitting of the light emitting diode chip and the performance and reliability of the light emitting diode chip are improved.

In an alternative embodiment, as shown in fig. 3, the distance from the 1 st similar pattern 210 to the center point 201 is L1, the distance from the 2 nd similar pattern 220 to the center point 201 is L2, and L2 is 70% -100% of L1. L2 may or may not be equal to L1, alternatively for example L2 is 70%, 75%, 80%, 85%, 90%, 95%, 100% of L1, etc. L1 may be the distance from the geometric center point of the conductive via 200 to the center point 201 in the 1 st similar pattern 210. From L1, L2, L3, … …, ln, etc. are obtained in this order. In alternative embodiments, L1 is between 100 μm and 300. Mu.m. Alternatively, L1 may be, for example, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, etc.

In an alternative embodiment, as shown in fig. 3, the difference T between the distance from the nth similar pattern to the center point 201 and the distance from the peripheral edge of the epitaxial structure 100 to the center point 201 is between 50 μm and 300 μm. Alternatively, T may be, for example, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, etc.

In an alternative embodiment, as shown in FIG. 3, the aperture of the conductive via 200 is between 20 μm and 60 μm. Alternatively, the aperture of the conductive hole 200 may be, for example, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, or the like.

In an alternative embodiment, as shown in fig. 3, the light emitting diode chip of the present embodiment further includes a first electrical connection layer 300, where the first electrical connection layer 300 is electrically connected to the second surface of the second semiconductor layer 130, and a side of the first electrical connection layer 300, which is close to the second surface of the second semiconductor layer 130, has a first mesa 310 uncovered by the epitaxial structure 100, and a first electrode 400 is disposed on the first mesa 310. The material of the first electrical connection layer 300 is metal, and is used for electrical connection with the second semiconductor layer 130. The material of the first electrical connection layer 300 may be Au, cu, ni, or the like, for example. The first electrode 400 is made of metal and is electrically connected to the second semiconductor layer 130 through the first electrical connection layer 300. The first electrode 400 may be Ti, pt, ni, au, for example.

In an alternative embodiment, as shown in fig. 3, the light emitting diode chip of the present embodiment further includes a second electrical connection layer 600, where the second electrical connection layer 600 passes through the conductive hole 200 and is electrically connected to the first semiconductor layer 110, the second electrical connection layer 600 at least covers a side of the first electrical connection layer 300 facing away from the second semiconductor layer 130, a second electrode 700 is disposed on a side of the second electrical connection layer 600 facing away from the first electrical connection layer 300, and the second electrical connection layer 600 is electrically connected to the second electrode 700. The material of the second electrical connection layer 600 is metal, and is used for electrical connection with the first semiconductor layer 110. The material of the second electrical connection layer 600 may be Al, ag, cr, pt, tiW, for example. The material of the second electrode 700 may be Ti, pt, au, sn, for example.

In an alternative embodiment, as shown in fig. 3, an insulating layer 500 is disposed on the inner wall of the conductive via 200 and on the side of the first electrical connection layer 300 facing away from the second semiconductor layer 130, and the first electrical connection layer 300 and the second electrical connection layer 600 are electrically insulated from each other by the insulating layer 500. The insulating layer 500 is preferably made of a material having good insulation properties, such as SiO ₂ 、SiN _x 、SiO _x N _y 、TiO ₂ 、Al ₂ O ₃ 、TiN、AlN、ZrO ₂ 、TiAlN、TiSiN、HfO ₂ 、TaO ₂ Or MgF ₂ Etc.

In an alternative embodiment, as shown in fig. 3, corresponding to the epitaxial structure 100, a current spreading layer 800a, a reflective layer 800b and a protective layer 800c are stacked in sequence between the second semiconductor layer 130 and the first electrical connection layer 300 from the second surface of the second semiconductor layer 130. In order to avoid short circuit, the current spreading layer 800a, the reflective layer 800b, and the protective layer 800c are also electrically insulated from the second electrical connection layer 600 of the conductive pillar 200 by the insulating layer 500. The current spreading layer 800a is used for spreading current, so that current distribution is more uniform, the operating voltage of the light emitting diode chip is reduced, and the light emitting effect of the light emitting diode chip is improved. The current spreading layer 800a may be made of a metal material, for example, ag or the like, or a transparent conductive material, for example, indium Tin Oxide (ITO), zinc indium oxide (IZO), or the like. The reflective layer 800b is configured to reflect light in the epitaxial structure 100 toward a side facing away from the second semiconductor layer 130, return the light to the epitaxial structure 100, and radiate the light from a light emitting side of the epitaxial structure 100, so as to improve light emitting efficiency of the light emitting diode chip. The material of the reflective layer 800b may be, for example, al, ag, or the like, or may be DBR, or the like. The protective layer 800c is made of a chemically stable metal, for example, au, pt, tiW, cr.

Example two

The present embodiment also provides a light emitting diode chip, which, as shown in fig. 4 and 5, also includes an epitaxial structure 100 and a plurality of conductive vias 200 disposed in the epitaxial structure 100. One difference from the embodiment is that:

as shown in fig. 4 and 5, the first electrical connection layer 300 has a square profile, the epitaxial structure 100 has a circular profile, and the first electrode 400 disposed on the first mesa 310 has a patterned structure having an "L" shape. Since the epitaxial structure 100 of the led chip of the present embodiment has a circular outline, the geometric center point of the epitaxial structure 100 is the center of the circle, and the formed multiple similar patterns are multiple concentric circles. The radius difference between adjacent circles gradually decreases in the direction from the center of the epitaxial structure 100 to the peripheral edge of the epitaxial structure 100.

In an alternative embodiment, as shown in fig. 4 and 5, a plurality of conductive vias 200 located on the same circle are uniformly distributed at circumferentially spaced intervals. The distance W between the geometric center points of two adjacent conductive vias 200 located on the circumference of the same circle is between 100 μm and 400 μm. Alternatively, W may be, for example, 100 μm, 200 μm, 300 μm, 400 μm, etc.

In an alternative embodiment, as shown in fig. 4, a geometric center point of the epitaxial structure 100 may be provided with a conductive via 200. As shown in fig. 5, the geometric center point of the epitaxial structure 100 may not be provided with the conductive via 200.

Example III

The present embodiment also provides a light emitting diode chip, which, as shown in fig. 6 and 7, also includes an epitaxial structure 100 and a plurality of conductive vias 200 disposed in the epitaxial structure 100. The first or second embodiment is different from the first embodiment in that:

the first electrical connection layer 300 has a square profile, the epitaxial structure 100 has a square profile, and the first electrode 400 has a square profile. Since the epitaxial structure 100 of the led chip of the present embodiment has a square outline, the geometric center point of the epitaxial structure 100 is the center point of the square, and the formed multiple concentric similar patterns are similar squares. Along the direction from the center point of the epitaxial structure 100 to the peripheral edge of the epitaxial structure 100, the distance difference between adjacent squares gradually decreases, the distance difference between adjacent squares is the distance difference between adjacent squares in a first direction, a second direction or a third direction, the first direction may be a vertical direction, the second direction may be a horizontal direction, and the third direction is a direction having an included angle of 45 ° with the first direction or the second direction.

In an alternative embodiment, the conductive holes 200 may be circular holes as shown in fig. 6, or square holes as shown in fig. 7.

The led chips provided in the first, second, or third embodiments and the led chips in the prior art (led chips shown in fig. 1 or 2) were tested for light efficiency at the same current level, and the experimental results are shown in table 1:

TABLE 1

As can be seen from table 1, the light emitting diode chip provided by the present application effectively improves the light efficiency of the light emitting diode chip by changing the distribution rule of the conductive holes.

Example IV

The present embodiment provides a light emitting diode, as shown in fig. 8, which includes an epitaxial structure 100 and a plurality of conductive vias 200 disposed in the epitaxial structure 100. The epitaxial structure 100 includes at least a first semiconductor layer 110, an active layer 120 and a second semiconductor layer 130 stacked in sequence from top to bottom, the second semiconductor layer 130 having a first surface and a second surface disposed opposite to each other, a first surface defining the second semiconductor layer 130 is connected to the active layer 120, and a second surface of the second semiconductor layer 130 faces away from the active layer 120. The conductive via 200 penetrates the second semiconductor layer 130, the active layer 120, and a portion of the first semiconductor layer 110; the geometric center point of the epitaxial structure 100 is taken as a center point 201 (the geometric center point of the epitaxial structure 100 refers to the geometric center point of a cross section obtained by transversely cutting the epitaxial structure 100 in the horizontal direction when the epitaxial structure 100 includes the conductive holes 200), the conductive holes 200 are distributed in the circumferential directions of a plurality of similar patterns with the center point 201, and the distance difference between adjacent similar patterns and the center point 201 is gradually reduced along the linear direction from the geometric center point of the epitaxial structure 100 to the edge of the epitaxial structure, that is, the distance difference between the edges of the adjacent similar patterns and the center point is gradually reduced in the same direction (the distance between the edges of the similar patterns and the center point in the application refers to the distance between the edges of the similar patterns and the center point). It will be appreciated that the similar pattern has a regular shape and is a symmetrical center pattern about the center point 201. In the embodiment, the distance difference from the conductive holes 200 to the center point 201 in the circumferential direction of the adjacent similar patterns is gradually reduced by setting the straight line direction from the geometric center point of the epitaxial structure 100 to the edge of the epitaxial structure, so that the uniformity of the current diffusion of the light emitting diode can be effectively improved, the current concentration of the light emitting diode in a certain area is avoided, and the brightness and the uniformity of the light emitting diode are further improved; meanwhile, local temperature rise caused by that the current of the light-emitting diode is concentrated in a certain area is avoided, and the performance and reliability of the light-emitting diode are improved.

The light emitting diode of the present embodiment has the same technical features as the light emitting diode chip described in the first, second or third embodiments, and will not be described herein.

In an alternative embodiment, the light emitting diode of the present embodiment further includes a substrate 900, where the substrate 900 is electrically connected to the second electrode 700. The substrate 900 provides mechanical support for the light emitting diode, while the substrate 900 is a conductive substrate, and the material of the conductive substrate may be Cu, W, mo, or the like, for example.

Example five

The present embodiment provides a light emitting device, as shown in fig. 9, including a circuit board 021 and a plurality of light emitting units 022 disposed on the circuit board 021, where the light emitting units 022 include the light emitting diode chips provided in the first to third embodiments or the light emitting diodes provided in the fourth embodiment of the present application.

By adopting the light emitting diode chip provided in the first to third embodiments or the light emitting diode provided in the fourth embodiment, the light emitting device can effectively improve the brightness and uniformity of the emitted light, and improve the performance and reliability of the light emitting device.

The light-emitting device can be used for lighting such as a car lamp and a flashlight of a vehicle, can effectively improve the brightness and uniformity of emitted light, and improves the performance and reliability of the light-emitting device.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (18)

1. A light emitting diode chip, comprising:

the epitaxial structure at least comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein the second semiconductor layer is provided with a first surface and a second surface which are oppositely arranged, the first surface of the second semiconductor layer is connected with the active layer, and the second surface of the second semiconductor layer faces away from the active layer;

a plurality of conductive vias disposed in the epitaxial structure and penetrating the second semiconductor layer, the active layer, and a portion of the first semiconductor layer;

and the conducting holes are distributed on the circumferences of similar patterns of the concentric points by taking the geometric center point of the epitaxial structure as the center point, and the distance difference between the adjacent similar patterns and the center point is gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the edge of the epitaxial structure.

2. The led chip of claim 1, wherein the plurality of concentric patterns are defined as the 1 st and 2 nd patterns, respectively, along a straight line from a geometric center point of the epitaxial structure to an edge thereof

Shape, … …, n-2-th similar pattern, n-1-th similar pattern, n-th similar pattern, wherein the difference between the distance from the n-th similar pattern to the center point and the distance from the n-1-th similar pattern to the center point is Ln, and the difference between the distance from the n-1-th similar pattern to the center point and the distance from the n-2-th similar pattern to the center point is Ln-1; wherein Ln is 70% -100% of Ln-1, and n is an integer greater than or equal to 2.

3. The led chip of claim 2, wherein the distance from the 1 st similar pattern to the center point is L1, the difference between the distance from the 2 nd similar pattern to the center point and L1 is L2, and L2 is 70% -100% of L1.

4. A light emitting diode chip as claimed in claim 3, wherein L1 is between 100 μm and 300 μm.

5. A light emitting diode chip as claimed in any one of claims 2 to 4, wherein the geometrical centre point of the epitaxial structure is provided with the conductive holes or is not provided with the conductive holes.

6. The led chip of claim 2, wherein the difference between the distance of the nth similar pattern from the center point and the distance of the edge of the epitaxial structure from the center point is between 50 μm and 300 μm.

7. The led chip of claim 1, wherein a plurality of said conductive vias are spaced evenly around the same similar pattern.

8. The led chip of claim 7, wherein the distance between geometric center points of adjacent conductive vias in the same similar pattern perimeter is between 100 μm and 400 μm.

9. The led chip of claim 1, wherein the conductive vias have a pore size of 20 μm to ultra-high

60μm。

10. The light emitting diode chip of claim 1, further comprising a first electrical connection layer electrically connected to the second surface of the second semiconductor layer, the first electrical connection layer having a first mesa on a side thereof proximate to the second semiconductor layer that is not covered by the epitaxial structure, the first mesa having a first electrode disposed thereon.

11. The light emitting diode chip of claim 10, further comprising a second electrical connection layer and a second electrode electrically connected to the second electrical connection layer, the second electrical connection layer electrically connected to the first semiconductor layer through the conductive via; the second electrical connection layer covers at least a side of the first electrical connection layer facing away from the second semiconductor layer.

12. The light emitting diode chip of claim 11, wherein an inner wall of the conductive via and a side of the first electrical connection layer facing away from the second semiconductor layer are provided with an insulating layer, the first electrical connection layer and the second electrical connection layer being electrically insulated from each other by the insulating layer.

13. The light emitting diode chip of claim 12, wherein a current spreading layer, a reflective layer, and a protective layer are stacked in order from the second surface of the second semiconductor layer, between the second semiconductor layer and the first electrical connection layer, corresponding to the epitaxial structure.

14. The light emitting diode chip of claim 10, wherein the first electrical connection layer has a square profile, the epitaxial structure has a circular profile, and the first electrode has a patterned structure in the shape of an "L".

15. The light emitting diode chip of claim 10, wherein the first electrical connection layer has a square profile, the epitaxial structure has a square profile, and the first electrode has a square profile.

16. A light emitting diode, comprising:

the epitaxial structure at least comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein the second semiconductor layer is provided with a first surface and a second surface which are oppositely arranged, the first surface of the second semiconductor layer is connected with the active layer, and the second surface of the second semiconductor layer faces away from the active layer;

a plurality of conductive vias disposed in the epitaxial structure and penetrating the second semiconductor layer, the active layer, and a portion of the first semiconductor layer;

and the conducting holes are distributed on the circumferences of similar patterns of the concentric points by taking the geometric center point of the epitaxial structure as the center point, and the distance difference between the adjacent similar patterns and the center point is gradually reduced along the straight line direction from the geometric center point of the epitaxial structure to the edge of the epitaxial structure.

17. The led of claim 16, wherein the plurality of concentric patterns are defined as 1 st and 2 nd patterns, respectively, along a line from a geometric center point of the epitaxial structure to an edge thereof

Shape, … …, n-2-th similar pattern, n-1-th similar pattern, n-th similar pattern, wherein the difference between the distance from the n-th similar pattern to the center point and the distance from the n-1-th similar pattern to the center point is Ln, and the difference between the distance from the n-1-th similar pattern to the center point and the distance from the n-2-th similar pattern to the center point is Ln-1; wherein Ln is 70% -100% of Ln-1, and n is an integer greater than or equal to 2.

18. A light-emitting device comprising a wiring board and a plurality of light-emitting units provided on the wiring board, wherein the light-emitting units comprise the light-emitting diode chip according to any one of claims 1 to 15 or the light-emitting diode according to any one of claims 16 to 17.