CN117690869A - Copper-copper low-temperature direct bonding method in air environment - Google Patents
Copper-copper low-temperature direct bonding method in air environment Download PDFInfo
- Publication number
- CN117690869A CN117690869A CN202410123350.0A CN202410123350A CN117690869A CN 117690869 A CN117690869 A CN 117690869A CN 202410123350 A CN202410123350 A CN 202410123350A CN 117690869 A CN117690869 A CN 117690869A
- Authority
- CN
- China
- Prior art keywords
- copper
- bonding
- copper plating
- bonded
- plated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 title claims abstract description 16
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000010949 copper Substances 0.000 claims abstract description 78
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052802 copper Inorganic materials 0.000 claims abstract description 75
- 238000007747 plating Methods 0.000 claims abstract description 61
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 29
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 3
- 238000002203 pretreatment Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 238000010008 shearing Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Abstract
The invention belongs to the technical field of three-dimensional packaging, and discloses a copper-copper low-temperature direct bonding method in an air environment, which comprises the following steps: firstly, pretreating a copper plating surface of a clean copper plating bonding body by utilizing glycerol in an air environment to obtain the copper plating bonding body to be bonded; then, the copper-plated bonded body to be bonded is pressure bonded in an air atmosphere. The bonding method provided by the invention has the advantages that the gas atmosphere is normal, no protective gas is needed, the process is simple, the process cost is low, the industrial production is facilitated, and the obtained copper-copper bonding surface has high shearing strength.
Description
Technical Field
The invention belongs to the technical field of three-dimensional packaging, and particularly relates to a copper-copper low-temperature direct bonding method in an air environment.
Background
In the last decades, the miniaturization of integrated circuits has been governed by the shrinking of transistor dimensions that follow moore's law, the feature sizes of which have approached physical limits. Meanwhile, the continuous expansion of the transistor drives the explosive increase of the density of the metal layer, so that the connection delay is greatly increased. In recent years, there have been challenges to shrinking transistor dimensions to improve IC performance due to physical limitations and interconnect bottlenecks. Therefore, three-dimensional integrated circuits (3D ICs) have attracted extensive attention and research as an important alternative technology to solve the above problems. By vertically integrating multiple levels of integrated circuit layers in the same package, three-dimensional integrated circuit technology is expected to provide short interconnect line lengths, small form factor, low power consumption, and heterogeneous integration capability.
Bonding is the key to vertical stacking of chips or wafers in three-dimensional integrated circuits, with solder interconnects being the most commonly used bonding technique due to its low cost and high throughput. However, solder interconnects are difficult to meet the extremely high demands on I/O density and reliability from the rise of emerging industries such as artificial intelligence, autopilot, internet of things, 5G networks, etc. Thus, the search for bonding schemes is continued, and Cu-Cu direct bonding is considered a more promising way of attachment, with higher density and reliability. Cu has excellent properties including excellent electromigration resistance, high electrical and thermal conductivity, low cost, and high compatibility with package fabrication, etc., and has been the most popular bonding medium.
Although Cu-Cu direct bonding has many advantages, the high thermal budget of the direct bonding process limits the range of applications in the industry. In particular, copper oxidizes during bonding, preventing copper diffusion at the copper-copper bond interface. At present, a common method for solving the problem of copper oxidation is to bond in a protective atmosphere or a reducing atmosphere. The method not only requires good tightness of the device, but also increases the process complexity and bonding cost by using a protective or reducing gas.
Disclosure of Invention
In view of the above, the present invention aims to provide a copper-copper low temperature direct bonding method in an air environment, wherein the bonding method provided by the present invention can realize copper-copper direct bonding at a lower temperature in air, and obtain a bonding body with higher bonding strength.
The invention adopts the following technical scheme for realizing the purpose:
a method for copper-copper low temperature direct bonding in an air environment comprising the steps of:
firstly, pretreating a copper plating surface of a clean copper plating bonding body by utilizing glycerol in an air environment to obtain the copper plating bonding body to be bonded;
then, the copper-plated bonded body to be bonded is pressure bonded in an air atmosphere.
Preferably, the pretreatment method comprises the following steps: dripping glycerol to the copper plating surface of the first copper plating bonding body, and enabling the glycerol to uniformly cover the copper plating surface; and then stacking the second copper plating bonding body above the first copper plating bonding body by using the copper plating surface of the first copper plating bonding body and the copper plating surface of the second copper plating bonding body to be opposite, aligning the centers of the first copper plating bonding body and the second copper plating bonding body, and processing for 5 minutes at 150-250 ℃ to obtain the copper plating bonding body to be bonded.
Preferably, the glycerol is present in a volume concentration of not less than 99%.
Preferably, the temperature of the pressurizing bonding is 150-250 ℃, the pressure is 300-1000N, and the heat preservation and pressure maintaining time is 15-30 min.
Preferably, the method for obtaining the clean copper-plated bonding body comprises the following steps: and (5) carrying out ultrasonic cleaning on the copper-plated bonding body. The ultrasonic cleaning comprises acetone ultrasonic cleaning, absolute ethyl alcohol ultrasonic cleaning, 0.1mol/L dilute hydrochloric acid ultrasonic cleaning and deionized water ultrasonic cleaning in sequence.
The above-described copper-copper low temperature direct bonding method of the present invention is applicable to a variety of copper-plated bonds including, but not limited to, a range of semiconductor materials such as copper-plated silicon, copper-plated germanium, copper-plated silicon carbide, copper-plated gallium arsenide, copper-plated gallium nitride, copper-plated indium phosphide, and the like.
The beneficial effects of the invention are as follows:
the invention provides a copper-copper low-temperature direct bonding method in an air environment, which comprises two steps of glycerol pretreatment and pressurized bonding. According to the invention, the glycerol is utilized to react with the surface of the copper plating bonding body, on one hand, the glycerol isolates the contact between oxygen and the copper plating surface, on the other hand, the glycerol can reduce the oxide of the copper plating surface, and then, the copper atoms of the two copper plating surfaces after pretreatment are mutually diffused at the interface under a certain temperature and pressure to realize bonding. The bonding method of the invention does not require the use of lead-free solders for interconnection and directly connects the reduced copper-plated surfaces by atomic contact in pairs. The bonding of the solder interlayer is used, the melting point of the solder is low, and the desoldering is easy to occur at high temperature, and the bonding method can improve the high temperature resistance of the device. And the shearing strength of the copper-copper bonding surface obtained by the bonding method provided by the invention can reach more than 19 MPa. In addition, the bonding process of the present invention has a normal atmosphere without the need for a shielding gas. The invention has simple process and low process cost, and is beneficial to industrial production.
Drawings
FIG. 1 is a schematic diagram of a bonding flow path according to the present invention, wherein reference numerals are used for the following: 11 is a substrate of a second copper-plated bond; 12 is a substrate of a first copper-plated bond; 21 is a copper layer of a second copper plated bond; 22 is the copper layer of the first copper plated bond; 31 is the copper layer surface oxide layer of the second copper plated bond; 32 is the copper layer surface oxide layer of the first copper plated bond; and 4 is glycerol.
FIG. 2 is a view showing a real matter before the glycerol treatment of the copper-plated bond in example 1.
FIG. 3 is a diagram showing the structure of the copper-plated bond after the glycerol treatment in example 1.
Fig. 4 is an SEM image of the bonding interface of the copper-plated silicon bond body in example 1, which completes the bonding.
FIG. 5 is a graph showing the comparison of bonding strength of the bonded products of examples 1 to 5.
Detailed Description
As shown in fig. 1, the present invention provides a copper-copper low temperature direct bonding method in an air environment, comprising the steps of:
firstly, pretreating a copper plating surface of a clean copper plating bonding body by utilizing glycerol in an air environment to obtain the copper plating bonding body to be bonded;
then, the copper-plated bonded body to be bonded is pressure bonded in an air atmosphere.
In a preferred embodiment, the pretreatment method is as follows: dripping glycerol to the copper plating surface of the first copper plating bonding body, and enabling the glycerol to uniformly cover the copper plating surface; and then stacking the second copper plating bonding body above the first copper plating bonding body by using the copper plating surface of the first copper plating bonding body and the copper plating surface of the second copper plating bonding body to be opposite, aligning the centers of the first copper plating bonding body and the second copper plating bonding body, and processing for 5min at 150-250 ℃ to obtain the copper plating bonding body to be bonded.
In a preferred embodiment, the glycerol is present in a concentration of not less than 99% by volume.
In a preferred embodiment, the pressure bonding temperature is 150-250 ℃, the pressure is 300-1000N, and the heat preservation and pressure maintaining time is 15-30 min.
In a preferred embodiment, the copper-plated bond includes, but is not limited to, a series of semiconductor materials including copper-plated silicon, copper-plated germanium, copper-plated silicon carbide, copper-plated gallium arsenide, copper-plated gallium nitride, copper-plated indium phosphide, and the like. In the present invention, the size of the copper-plated bond is not particularly limited.
In a preferred embodiment, the method of obtaining a clean copper-plated bond comprises: and (5) carrying out ultrasonic cleaning on the copper-plated bonding body. The frequency of the ultrasonic cleaning is preferably 20-50 KHz, more preferably 40KHz. The ultrasonic cleaning preferably comprises the steps of sequentially performing acetone ultrasonic cleaning, absolute ethyl alcohol ultrasonic cleaning, 0.1mol/L dilute hydrochloric acid ultrasonic cleaning and deionized water ultrasonic cleaning. The time of ultrasonic cleaning of the acetone is preferably 4-6 min, more preferably 5min, and the times are preferably 2-3 times; the time of the ultrasonic cleaning of the absolute ethyl alcohol is preferably 4-6 min, more preferably 5min, and the times are preferably 2-3 times; the ultrasonic cleaning time of the dilute hydrochloric acid is preferably 4-6 min, more preferably 5min, and the frequency is preferably 2-3 times; the ultrasonic cleaning time of the deionized water is preferably 4-6 min, more preferably 5min, and the times are preferably 2-3 times.
In a preferred embodiment, the ultrasonic cleaning further comprises drying the cleaned copper-plated bond with argon.
In a preferred embodiment, the pretreatment and the pressure bonding are performed in a bonding chamber of a die bonder.
The technical solutions provided by the present invention are described in detail below in conjunction with examples for further illustrating the present invention, but they should not be construed as limiting the scope of the present invention.
Example 1
In this example, two copper-plated bonded bodies (the second copper-plated bonded body has a size of 6mm×6mm, the first copper-plated bonded body has a size of 10mm×10mm, and the substrates of both copper-plated bonded bodies are silicon on which a copper layer is formed) were bonded as follows:
1. ultrasonic cleaning
And sequentially carrying out ultrasonic cleaning of acetone, ultrasonic cleaning of absolute ethyl alcohol, ultrasonic cleaning of 0.1mol/L dilute hydrochloric acid and ultrasonic cleaning of deionized water on the two copper-plated bonding bodies. The ultrasonic frequency is 40KHz, the cleaning time is 5min each time, and the cleaning times of each solvent are 2 times. And drying the cleaned copper-plated bonding body by argon.
2. Pretreatment of
Dropwise adding 0.2mL of glycerol to the copper-plated surface of the first copper-plated bonding body, and uniformly covering the copper-plated surface with the glycerol; and then, the copper plating surface of the first copper plating bonding body is opposite to the copper plating surface of the second copper plating bonding body, the second copper plating bonding body is stacked above the first copper plating bonding body, the centers of the first copper plating bonding body and the second copper plating bonding body are aligned, and the copper plating bonding body to be bonded is obtained after processing for 5min at 150 ℃ in a normal air environment. The glycerol reacts with the surface of the copper-plated bonding body, so that the copper-plated surface can be protected from being oxidized, and the original oxide layer on the surface of the copper layer can be reduced.
3. Compression bonding
And continuously heating the copper-plated bonding body to be bonded to the bonding temperature of 150 ℃ in an air environment, keeping the temperature and applying pressure of 360N, and performing thermal insulation bonding for 30min to realize bonding of the two copper-plated silicon bonding bodies.
FIGS. 2 and 3 are pictorial representations of a copper-plated bond before and after glycerol treatment, respectively. From the figure, it can be seen that glycerol is effective in reducing the surface oxide layer of the copper-plated bond.
Fig. 4 is an SEM image of the bonding interface of the copper-plated silicon bond to complete bonding, and it can be seen from the figure that the bonding condition of copper is very good, there is a continuous bonding interface, and almost no voids exist.
Example 2
This embodiment differs from embodiment 1 only in that: the pretreatment temperature and bonding temperature were 175 ℃.
Example 3
The only difference from example 1 is that: the pretreatment temperature and bonding temperature were 200 ℃.
Example 4
The only difference from example 1 is that: the pretreatment temperature and bonding temperature were 225 ℃.
Example 5
The only difference from example 1 is that: the pretreatment temperature and bonding temperature were 250 ℃.
Example 6
The only difference from example 1 is that: the silicon substrate of the copper-plated bond is replaced with a silicon carbide substrate.
The copper-plated silicon bonded bodies after bonding in examples 1 to 5 were subjected to bonding strength (shear strength) test by a shear force tester, and the test results are shown in fig. 5, and as can be seen from fig. 5: the bonding strength of the bonded product according to example 1 (bonding temperature: 150 ℃ C.) was 14.8MPa, the bonding strength of the bonded product according to example 2 (bonding temperature: 175 ℃ C.) was 17.1MPa, the bonding strength of the bonded product according to example 3 (bonding temperature: 200 ℃ C.) was 18.7MPa, the bonding strength of the bonded product according to example 4 (bonding temperature: 225 ℃ C.) was 19.9MPa, and the bonding strength of the bonded product according to example 5 (bonding temperature: 250 ℃ C.) was 18.5 MPa. The bonding strength is gradually improved along with the increase of the bonding temperature, but the reason that the bonding strength is reduced after 250 ℃ is that glycerol is consumed too quickly when the temperature is increased, and the copper-plated silicon wafer is subjected to secondary oxidation. The bonding strength of the bonded product of example 6 was 17.5MPa.
Note that: the bonding strength obtained by the test of the invention is the average value obtained by respectively testing three samples bonded under the same process condition in each embodiment, and in practice, the breaking position in the shear force test is often a silicon wafer instead of a bonding interface, so that the actual bonding force is larger than the tested shear force.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (6)
1. A method for copper-copper low temperature direct bonding in an air environment, comprising the steps of:
firstly, pretreating a copper plating surface of a clean copper plating bonding body by utilizing glycerol in an air environment to obtain the copper plating bonding body to be bonded;
then, the copper-plated bonded body to be bonded is pressure bonded in an air atmosphere.
2. A copper-copper low temperature direct bonding method in an air environment according to claim 1, wherein the pretreatment method is as follows: dripping glycerol to the copper plating surface of the first copper plating bonding body, and enabling the glycerol to uniformly cover the copper plating surface; and then stacking the second copper plating bonding body above the first copper plating bonding body by using the copper plating surface of the first copper plating bonding body and the copper plating surface of the second copper plating bonding body to be opposite, aligning the centers of the first copper plating bonding body and the second copper plating bonding body, and processing for 5 minutes at 150-250 ℃ to obtain the copper plating bonding body to be bonded.
3. A method of copper-copper low temperature direct bonding in an air environment according to claim 1 or 2, characterized in that: the volume concentration of the glycerol is not less than 99%.
4. A method of copper-copper low temperature direct bonding in an air environment according to claim 1 or 2, characterized in that: the temperature of the pressurizing bonding is 150-250 ℃, the pressure is 300-1000N, and the heat preservation and pressure maintaining time is 15-30 min.
5. A method of copper-copper low temperature direct bonding in an air environment according to claim 1 or 2, characterized in that: the method for obtaining the clean copper-plated bonding body comprises the following steps: and (5) carrying out ultrasonic cleaning on the copper-plated bonding body.
6. A method of copper-copper low temperature direct bonding in an air environment according to claim 5, wherein: the ultrasonic cleaning comprises the steps of sequentially performing acetone ultrasonic cleaning, absolute ethyl alcohol ultrasonic cleaning, dilute hydrochloric acid ultrasonic cleaning and deionized water ultrasonic cleaning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410123350.0A CN117690869B (en) | 2024-01-30 | 2024-01-30 | Copper-copper low-temperature direct bonding method in air environment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410123350.0A CN117690869B (en) | 2024-01-30 | 2024-01-30 | Copper-copper low-temperature direct bonding method in air environment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117690869A true CN117690869A (en) | 2024-03-12 |
| CN117690869B CN117690869B (en) | 2024-05-07 |
Family
ID=90137382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410123350.0A Active CN117690869B (en) | 2024-01-30 | 2024-01-30 | Copper-copper low-temperature direct bonding method in air environment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117690869B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU697285A1 (en) * | 1978-03-01 | 1979-11-15 | Институт общей и неорганической химии АН Украинской ССР | Composition for protecting solder against oxidation |
| SU977130A2 (en) * | 1981-06-26 | 1982-11-30 | Московский Трижды Ордена Ленина,Ордена Октябрьской Революции И Ордена Трудового Красного Знамени Автомобильный Завод Им.И.А.Лихачева (Производственное Объединение Зил) | Soldering paste |
| WO1993010652A1 (en) * | 1991-11-22 | 1993-05-27 | Electrochemicals, Inc. | Process for improved adhesion between a metallic oxide and a polymer surface |
| CN102922828A (en) * | 2012-10-24 | 2013-02-13 | 浙江工贸职业技术学院 | Composite board of copper-foil-bonded ceramic substrate and preparation method of composite board |
| CN105127609A (en) * | 2015-10-15 | 2015-12-09 | 哈尔滨工业大学 | Copper/silver core-shell nano particle low-temperature sintering composite welding paste and preparation method thereof |
| JP2018167275A (en) * | 2017-03-29 | 2018-11-01 | 三菱マテリアル株式会社 | Manufacturing method for conjugant, manufacturing method for insulation circuit board, conjugant, and insulation circuit board |
| CN108878351A (en) * | 2018-06-26 | 2018-11-23 | 华中科技大学 | It is a kind of based on can autoreduction silver ion slurry low-temperature bonding method |
| CN111408869A (en) * | 2020-04-10 | 2020-07-14 | 华中科技大学 | Micro-nano copper particle soldering paste for low-temperature bonding and preparation method and application thereof |
| CN111834231A (en) * | 2019-04-19 | 2020-10-27 | 中国科学院深圳先进技术研究院 | Copper-based conductive paste and preparation method and application thereof |
| JP2022157301A (en) * | 2021-03-31 | 2022-10-14 | 三菱マテリアル株式会社 | Bonding liquid composition and its manufacturing method as well as manufacturing method of zygote |
| CN115956060A (en) * | 2020-08-28 | 2023-04-11 | 麦克德米德乐思公司 | Compositions and methods for electrodepositing nano twinned copper |
-
2024
- 2024-01-30 CN CN202410123350.0A patent/CN117690869B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU697285A1 (en) * | 1978-03-01 | 1979-11-15 | Институт общей и неорганической химии АН Украинской ССР | Composition for protecting solder against oxidation |
| SU977130A2 (en) * | 1981-06-26 | 1982-11-30 | Московский Трижды Ордена Ленина,Ордена Октябрьской Революции И Ордена Трудового Красного Знамени Автомобильный Завод Им.И.А.Лихачева (Производственное Объединение Зил) | Soldering paste |
| WO1993010652A1 (en) * | 1991-11-22 | 1993-05-27 | Electrochemicals, Inc. | Process for improved adhesion between a metallic oxide and a polymer surface |
| CN102922828A (en) * | 2012-10-24 | 2013-02-13 | 浙江工贸职业技术学院 | Composite board of copper-foil-bonded ceramic substrate and preparation method of composite board |
| CN105127609A (en) * | 2015-10-15 | 2015-12-09 | 哈尔滨工业大学 | Copper/silver core-shell nano particle low-temperature sintering composite welding paste and preparation method thereof |
| JP2018167275A (en) * | 2017-03-29 | 2018-11-01 | 三菱マテリアル株式会社 | Manufacturing method for conjugant, manufacturing method for insulation circuit board, conjugant, and insulation circuit board |
| CN108878351A (en) * | 2018-06-26 | 2018-11-23 | 华中科技大学 | It is a kind of based on can autoreduction silver ion slurry low-temperature bonding method |
| CN111834231A (en) * | 2019-04-19 | 2020-10-27 | 中国科学院深圳先进技术研究院 | Copper-based conductive paste and preparation method and application thereof |
| CN111408869A (en) * | 2020-04-10 | 2020-07-14 | 华中科技大学 | Micro-nano copper particle soldering paste for low-temperature bonding and preparation method and application thereof |
| CN115956060A (en) * | 2020-08-28 | 2023-04-11 | 麦克德米德乐思公司 | Compositions and methods for electrodepositing nano twinned copper |
| JP2022157301A (en) * | 2021-03-31 | 2022-10-14 | 三菱マテリアル株式会社 | Bonding liquid composition and its manufacturing method as well as manufacturing method of zygote |
Non-Patent Citations (4)
| Title |
|---|
| 李俊龙， 徐杨， 赵雪龙， 王英辉， TADATOMO SUGA: "铜颗粒低温烧结技术的研究进展", 焊 接 学 报, vol. 43, no. 3, 31 March 2022 (2022-03-31), pages 15 * |
| 李俊龙1, 2, 3， 徐杨1, 2， 赵雪龙1, 2, 3， 王英辉1, 2， TADATOMO SUGA: "铜颗粒低温烧结技术的研究进展", 焊接学报, vol. 43, no. 3, 31 March 2022 (2022-03-31), pages 15 * |
| 李科成: "用于三维封装的铜-铜低温键合技术进展", 电子元件与材料, vol. 34, no. 1, 31 January 2015 (2015-01-31), pages 11 * |
| 独 莉，廖广兰，张 昆，宿 磊，薛栋民: "钝化剂自组装单层膜在铜铜键合工艺中的应用", 材料、结构及工艺, vol. 35, no. 5, 31 October 2014 (2014-10-31), pages 820 - 822 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117690869B (en) | 2024-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9331032B2 (en) | Hybrid bonding and apparatus for performing the same | |
| CN106271177B (en) | A kind of interconnection solder and its interconnection manufacturing process | |
| Hromadka et al. | DBC technology for low cost power electronic substrate manufacturing | |
| US9358765B2 (en) | Method for coating and bonding substrates | |
| CN101667528A (en) | Apparatus and method of substrate to substrate bonding for three dimensional (3D) IC interconnects | |
| CN117690869B (en) | Copper-copper low-temperature direct bonding method in air environment | |
| Liu et al. | Novel large-area attachment for high-temperature power electronics module application | |
| Chong et al. | Comprehensive study of copper nano-paste for Cu-Cu bonding | |
| Liu et al. | Stress analysis of pressure-assisted sintering for the double-side assembly of power module | |
| Bemstein et al. | Effect of the plasma cleaning process on plastic ball grid array package assembly reliability | |
| CN101083217A (en) | Thermal-acoustic flip-chip bonding experimental bench | |
| Chang et al. | TSV process using bottom-up Cu electroplating and its reliability test | |
| KR102279083B1 (en) | Binder Free Cupper Paste and Sinter Bonding Method using the Same | |
| Seo et al. | Cu-SiO 2 Hybrid Bonding | |
| TW201239987A (en) | Protection of reactive metal surfaces of semiconductor devices during shipping by providing an additional protection layer | |
| Mizuishi et al. | Fluxless and virtually voidless soldering for semiconductor chips | |
| Fabis et al. | Thermal management enhancement for GaAs Devices using CVD diamond heat spreaders in a plastic package environment | |
| CN110164785A (en) | The guard method of solder joint after a kind of bonding wire routing | |
| CN113471163B (en) | Wafer interconnection structure and process | |
| Chen et al. | Research on vacuum soldering technology of military IGBT module | |
| Shih et al. | Hybrid Surface Treatment for Copper-to-Copper Thermal Compression Bonding Thermal Compression Bonding | |
| Park et al. | Two-Step Ar/N 2 Plasma Treatment on SiO 2 Surface for Cu/SiO 2 Hybrid Bonding | |
| CN114473110B (en) | Electromigration-resistant and oxidation-resistant soldering paste and application thereof | |
| Yeo et al. | Critical Threshold Limit for Effective Solder Void Size Reduction by Vacuum Reflow Process for Power Electronics Packaging | |
| Ang et al. | Packaging of high-temperature power semiconductor modules |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |