CN101083217A - Thermal-acoustic flip-chip bonding experimental bench - Google Patents
Thermal-acoustic flip-chip bonding experimental bench Download PDFInfo
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- CN101083217A CN101083217A CN 200610031729 CN200610031729A CN101083217A CN 101083217 A CN101083217 A CN 101083217A CN 200610031729 CN200610031729 CN 200610031729 CN 200610031729 A CN200610031729 A CN 200610031729A CN 101083217 A CN101083217 A CN 101083217A
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- flip
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- heating system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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Abstract
The invention relates to a thermo-acoustic inversion linkage laboratory bench, including the supersonic inversion system and the heating system, the invention rebuilds the cleaver tool of the supersonic conveying system which belongs to the gold thread linkage machine and the thick aluminum wire linkage machine, changes the tip cleaver to the blunt end cleaver, the supersonic weld system can contacts the flip chip with big area, the heating system is the heating system of the gold thread linkage machine, the temperature range is room temperature -400 deg.C, the input supersonic power is 0-15W, frequency is 60KHz, pressure is 0-1200g, linkage time is 5 -500ms. The invention has coordinated the work between supersonic inversion weld system and the heating system, reduced the welding power, and raised the welding efficiency.
Description
[technical field] the invention belongs to microelectronics/field of optoelectronic packaging.
[background technology] for satisfying the high density high-performance high efficiency requirement of Electronic Packaging, flip chip technology (fct) will be the main interconnection technique of semiconductor packages.Current back bonding technology comprises modes such as hot ultrasonic bonding, Reflow Soldering again (C4), thermocompression bonding, epoxide resin conductive adhesive bonding.Reflow Soldering reliability again is than higher, and salient point quantity is many, is the Sn/Pb scolder but its adopts, and is totally unfavorable to the protection of environment and human body.It is simple that epoxide resin conductive adhesive connects technology, and bonding at low temperatures, but exist reliability bad, and the too big deficiency that waits of dead resistance.Hot pressing connects technology does not have pollution problem, and the efficient height also exists reliability bad, and bonding conditions requires shortcomings such as harshness.
The ultrasonic back bonding of heat is the interaction that utilizes ultrasonic energy, pressure and heat, realizes the direct interconnection between chip I/O port.The key property of the ultrasonic connection technology of heat is that technology is simple, the joint efficiency height, and good reliability, and be a kind of unleaded green welding, be a kind of novel process that extremely has development potentiality in the current Chip Packaging field.But the experiment porch of not studying at present, ultrasonic flip-chip bonding tool system and heating system can not co-ordinations.
[summary of the invention] the purpose of this invention is to provide the experiment porch of an integrated thermal-acoustic flip-chip bonding, research thermal-acoustic flip-chip bonding technology, realize the interconnection between microelectronics integrated chip, photoelectron high-capacity LED wafer and the substrate, provide technology and technological principle for developing highly dense ultrasonic flip chip.
Utilize heat sound gold thread bonding machine and crude aluminum line bonding machine, integrated design thermal-acoustic flip-chip bonding experiment porch specifically comprises following content:
1. ultrasonic upside-down mounting system
Chopper instrument to the ultrasonic energy transfer system of crude aluminum line bonding machine and gold thread bonding machine is transformed, most advanced and sophisticated chopper the lead-in wire bonding changes the flush end chopper into, and ultrasonic soldering set system can be contacted with the flip-chip large tracts of land, solve the rotation and the slip of bonding process chips, realize thermal-acoustic flip-chip bonding.
2. heating system
The heating system of gold thread bonding machine is applied to integrated ultrasonic flip chip experimental system, satisfies the needs of ultrasonic flip chip weld heating temperature.Its temperature control mode PID control, control precision is less than 5 ℃.
3. reverse installation process parameter
The technological parameter of ultrasonic flip chip: ultrasonic power 0-15W, frequency 60KHz, pressure 0-1200g, time 5-500ms, temperature: room temperature-400 ℃, this range parameter is applied to the thermal-acoustic flip-chip bonding experimental system.
It is 100 times of thermal softening that ultrasonic energy makes the effect of metal softening, and the present invention makes ultrasonic flip-chip bonding tool system and heating system co-ordination, has reduced welding power, improved welding efficiency, the salient point of flip-chip adopts lead-in wire bonding Place technology, and Place technology is simple, flexible, and cost is low.For development thermoacoustic back bonding machine provides technology and technological design foundation.
[description of drawings]
Fig. 1 structural representation of the present invention;
The back bonding separating interface of Fig. 28 I/O numbers;
The back bonding separating interface of Fig. 3 20I/O number.
[execution mode]
As Fig. 1, the chopper instrument of the ultrasonic energy transfer system of crude aluminum line bonding machine and gold thread bonding machine to be transformed, the most advanced and sophisticated chopper the lead-in wire bonding changes the flush end chopper into.After repacking, substrate 3 just can place on the heating station 4, be heated to 400 ℃ with interior different temperatures, the different ultrasonic power of input 0-15W, set pressure, then, IC chip 1 back-off of band salient point is on substrate 3, exert pressure and ultrasonic energy 2 from die terminals again, in the 300-500 millisecond, realize being connected of chip electrode and substrate.Just can get the back bonding product under all kinds of different experimental conditions.As Fig. 2, shown in Figure 3.
Claims (1)
1. thermal-acoustic flip-chip bonding experimental bench, comprise ultrasonic flip-chip bonding tool system and heating system, it is characterized in that: the chopper instrument to the ultrasonic energy transfer system of crude aluminum line bonding machine and gold thread bonding machine is transformed, the most advanced and sophisticated chopper of lead-in wire bonding, change the flush end chopper into, ultrasonic soldering set system can be contacted with the flip-chip large tracts of land, heating system is the heating system of gold thread bonding machine, to the ultrasonic flip chip weld heating, temperature range is a room temperature to 400 ℃, and the input ultrasonic power is 0-15W, frequency 60KHz, pressure 0-1200g, bonding time 5-500ms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610031729 CN101083217A (en) | 2006-05-30 | 2006-05-30 | Thermal-acoustic flip-chip bonding experimental bench |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610031729 CN101083217A (en) | 2006-05-30 | 2006-05-30 | Thermal-acoustic flip-chip bonding experimental bench |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101083217A true CN101083217A (en) | 2007-12-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610031729 Pending CN101083217A (en) | 2006-05-30 | 2006-05-30 | Thermal-acoustic flip-chip bonding experimental bench |
Country Status (1)
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| CN (1) | CN101083217A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101774077A (en) * | 2010-03-19 | 2010-07-14 | 周志坚 | Numerical control rotating three-dimensional ultrasonic gold wire bonder |
| CN101774078A (en) * | 2010-03-19 | 2010-07-14 | 周志坚 | Ultrasonic gold wire bonder |
| CN102082106A (en) * | 2010-12-13 | 2011-06-01 | 中南大学 | Thermoacoustic flip-chip bonding method of copper salient points |
| CN101728289B (en) * | 2008-10-10 | 2011-12-28 | 哈尔滨工业大学深圳研究生院 | Room temperature ultrasonic soldering method for area array encapsulated electronic components |
| CN103367186A (en) * | 2012-03-28 | 2013-10-23 | 西安永电电气有限责任公司 | IGBT (insulated gate bipolar transistor) chip bonding method |
-
2006
- 2006-05-30 CN CN 200610031729 patent/CN101083217A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101728289B (en) * | 2008-10-10 | 2011-12-28 | 哈尔滨工业大学深圳研究生院 | Room temperature ultrasonic soldering method for area array encapsulated electronic components |
| CN101774077A (en) * | 2010-03-19 | 2010-07-14 | 周志坚 | Numerical control rotating three-dimensional ultrasonic gold wire bonder |
| CN101774078A (en) * | 2010-03-19 | 2010-07-14 | 周志坚 | Ultrasonic gold wire bonder |
| CN102082106A (en) * | 2010-12-13 | 2011-06-01 | 中南大学 | Thermoacoustic flip-chip bonding method of copper salient points |
| CN102082106B (en) * | 2010-12-13 | 2012-04-25 | 中南大学 | Thermoacoustic flip-chip bonding method of copper salient points |
| CN103367186A (en) * | 2012-03-28 | 2013-10-23 | 西安永电电气有限责任公司 | IGBT (insulated gate bipolar transistor) chip bonding method |
| CN103367186B (en) * | 2012-03-28 | 2015-12-02 | 西安永电电气有限责任公司 | Igbt chip bonding method |
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