CN117650848A - 800G LR8 optical module - Google Patents
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Abstract
The invention relates to the technical field of optical communication data transmission, in particular to an 800G LR8 optical module, which comprises an optical signal transmitting unit, an optical signal receiving unit and an 8-channel DSP unit, wherein the optical signal transmitting unit comprises a laser transmitting module capable of transmitting 8 laser signals, an output end silicon optical monolithic integration module and a modulator driving module, and the output end silicon optical monolithic integration module is integrated with 8 MZ modulators and wavelength division multiplexers; the optical signal receiving unit comprises an input end silicon optical monolithic integrated module and a transimpedance amplifier, and a wavelength division multiplexer and an 8-channel photodiode are integrated on the input end silicon optical monolithic integrated module. The method replaces an 800G ZR module adopting a coherent technology on the transmission distance of a data center 10KM, only adopts LC sockets of single optical fibers in a TX channel and an RX channel, adopts single silicon chip integration, reduces the cost, reduces the processing length and the loss of the module, adopts QSFP-DD package, and has small volume and good compatibility.
Description
Technical Field
The invention relates to the technical field of optical communication data transmission, in particular to an 800G LR8 optical module.
Background
With the advent of the digitization age, explosive growth in data volume has placed higher demands on the transmission capabilities of communication networks. As an important component in the fields of data centers, cloud computing, 5G communications, etc., optical modules are continually being developed to meet the ever-increasing bandwidth demands. 800G optical modules have made significant progress as one of the most advanced optical modules at present.
For the 800G optical module interface technology, there are two main organizations, one is the 800G plug Table MSA working group and the other is the QSFP-DD 800 MSA working group. The main application scene of the 800G technical white book published by the 800G Plugable MSA working group is SR8 8x100G solution based on a scene of about hundred meters under a data center, a DR 8G optical mode with a distance of 500m, and a 800G QSFP-DD 2xFR optical module with a distance of 2KM, but when the distance reaches 10KM, a ZR (maximum distance) 800G optical module with a coherent technology has to be adopted, as shown in fig. 1, and the maximum transmission distance is 80 KM. However, the coherent module has complex technology, high cost and high energy consumption, and especially lacks cost performance in 10km application occasions.
Therefore, there is a need to propose a low-cost, low-energy-consumption 800g LR8 (Long Reach) optical module more suitable for 10km application.
Disclosure of Invention
First, the technical problem to be solved
In view of the above-mentioned drawbacks and shortcomings of the prior art, the present invention provides an 800G LR8 optical module, which solves the technical problems of high cost, high energy consumption and lack of cost performance of the ZR 800G optical module in the application scene of 10km in the prior art.
(II) technical scheme
In order to achieve the above purpose, the main technical scheme adopted by the invention comprises the following steps:
providing an 800G LR8 optical module, wherein the 800G LR8 optical module comprises an optical signal transmitting unit, an optical signal receiving unit and an 8-channel DSP unit;
the optical signal transmitting unit comprises a laser transmitting module, an output end silicon optical monolithic integration module and a modulator driving module, wherein the output end silicon optical monolithic integration module is integrated with an 8-path MZ modulator and a wavelength division multiplexer, and the modulator driving module receives the data electric signal sent by the 8-channel DSP unit and outputs a modulation signal to the output end silicon optical monolithic integration module so that the output end silicon optical monolithic integration module modulates and WDM processes 8 laser signals transmitted by the laser transmitting module and then converges the modulated 8 laser signals into a beam of output optical signals containing 8 wavelengths;
the optical signal receiving unit comprises an input end silicon optical monolithic integration module and a transimpedance amplifier, wherein a wavelength division multiplexer and an 8-channel photodiode are integrated on the input end silicon optical monolithic integration module, the input end silicon optical monolithic integration module performs WDM processing on received input optical signals containing 8 wavelengths and distributes the processed input optical signals to the photodiode of a corresponding channel to generate photocurrent signals, the photocurrent signals are output to the transimpedance amplifier, the transimpedance amplifier outputs electric signals to the 8-channel DSP unit, and the 8-channel DSP unit decodes the electric signals.
Optionally, the 800g LR8 optical module further includes a silicon optical control chip; the laser emitting module adopts a laser array with 8 wavelengths; the silicon light control chip is respectively and electrically connected with the output end silicon light monolithic integration module and the input end silicon light monolithic integration module, drives each laser to emit light by independent driving current for each wavelength laser, and controls parameters of the output end silicon light monolithic integration module and the input end silicon light monolithic integration module.
Optionally, the optical signal transmitting unit further comprises a TEC control chip, and the TEC control chip is electrically connected with the laser transmitting module and is used for adjusting the temperature of the laser transmitting module to stabilize 8 laser signals output by the laser transmitting module.
Optionally, the optical signal transmitting unit further comprises a collimating lens, a converging lens and an optical fiber LC output interface;
the optical signals emitted by the laser emission module are collimated by the collimating lens and then are converged by the converging lens to enter the silicon light modulation input optical ports of all channels so as to enter the silicon light monolithic integration module at the output end, wherein the silicon light modulation input optical ports are arranged at the optical signal input end of the silicon light monolithic integration module at the output end;
the optical fiber LC output interface is electrically connected with the output end silicon optical monolithic integration module and receives an output optical signal output by the output end silicon optical monolithic integration module.
Optionally, the 8-channel photodiode of the input end silicon optical monolithic integrated module is electrically connected with the transimpedance amplifier in a gold wire binding manner.
Optionally, the optical signal receiving unit further includes an optical fiber LC input interface, where the optical fiber LC input interface is electrically connected to the input-end silicon optical monolithic integration module, and sends the received input optical signal containing 8 wavelengths to the input-end silicon optical monolithic integration module.
Optionally, the 800g LR8 optical module further includes a gold finger, where the gold finger is electrically connected to the 8-channel DSP unit, and is configured to send a 100g PAM4 electrical signal of the 8-channel from the system MAC chip to the 8-channel DSP unit, and receive and send a single wave 100g PAM4 electrical signal output by the 8-channel DSP unit to the system MAC chip.
Optionally, the 800g LR8 optical module further includes a power supply unit, which receives a main power input from the golden finger and provides power for the electronic components in the 800g LR8 optical module.
Optionally, the 800g LR8 optical module further includes an MCU control unit;
the MCU control unit is respectively and electrically connected with the golden finger, the power supply unit, the 8-channel DSP unit and the silicon light control chip to monitor and indicate the working state of the 800G LR8 light module;
the MCU control unit is also communicated with a system MAC chip to realize the management of the 800G LR8 optical module by the system MAC chip.
Optionally, the 800g LR8 optical module is packaged by using a QSFP-DD packaging technology.
(III) beneficial effects
The beneficial effects of the invention are as follows: the 800G LR8 optical module provided by the embodiment of the invention replaces an 800G ZR module adopting a coherent technology on the transmission distance of a data center 10KM in the prior art, adopts a laser emitting module with 8 wavelengths as a light source, adopts an 8-path MZ modulator and a wavelength division multiplexer to process an output optical signal at an output end, and adopts the wavelength division multiplexer and an 8-channel photodiode to process an input optical signal at an input end, so that the upgrade of the data center is convenient no matter whether the input channel or the output channel only adopts LC sockets of single optical fibers, the investment of adding optical fiber resources is not needed, and the MZ modulator and the wavelength division multiplexer at the output end, the wavelength division multiplexer and the 8-channel photodiode at the input end are integrated by single silicon chips, thereby realizing the purposes of low cost, reducing the module process length and loss and improving the cost performance. And the 800G LR8 optical module adopts QSFP-DD encapsulation, and has small volume and good compatibility.
Drawings
Fig. 1 is a schematic diagram of an optical module technology adopted in optical communication in different transmission distances in the prior art;
fig. 2 is a schematic block diagram of an embodiment 1 of an 800g LR8 optical module according to the present invention;
fig. 3 is a schematic diagram illustrating signal transmission of each electronic component of the 800g LR8 optical module in fig. 1.
[ reference numerals description ]
1, a golden finger; 2, an MCU control unit; 3, a power supply unit; a 4,8 channel DSP unit; 5, a modulator driving module; 7, a transimpedance amplifier; 9, an output end silicon optical monolithic integrated module; 10, an input end silicon optical monolithic integrated module; 11, a silicon light control chip; 12, a TEC control chip; 13, a laser emission module; 21, an optical fiber LC output interface; 22, fiber LC input interface.
Detailed Description
The invention will be better explained by the following detailed description of the embodiments with reference to the drawings.
The embodiment of the invention provides an 800G LR8 optical module, which comprises an optical signal transmitting unit, an optical signal receiving unit and an 8-channel DSP unit; the optical signal transmitting unit comprises a laser transmitting module, an output end silicon optical monolithic integration module and a modulator driving module, wherein the output end silicon optical monolithic integration module is integrated with an 8-path MZ modulator and a wavelength division multiplexer, and the modulator driving module receives the data electric signal sent by the 8-channel DSP unit and outputs a modulation signal to the output end silicon optical monolithic integration module so that the output end silicon optical monolithic integration module modulates and WDM processes 8 laser signals transmitted by the laser transmitting module and then converges the modulated 8 laser signals into a beam of output optical signals containing 8 wavelengths; the optical signal receiving unit comprises an input end silicon optical monolithic integration module and a transimpedance amplifier, wherein a wavelength division multiplexer and an 8-channel photodiode are integrated on the input end silicon optical monolithic integration module, the input end silicon optical monolithic integration module performs WDM processing on received input optical signals containing 8 wavelengths and distributes the processed input optical signals to the photodiode of a corresponding channel to generate photocurrent signals, the photocurrent signals are output to the transimpedance amplifier, the transimpedance amplifier outputs electric signals to the 8-channel DSP unit, and the 8-channel DSP unit decodes the electric signals.
Fig. 1 is an optical module technology adopted in different transmission distances in optical communication in the prior art, the embodiment of the invention replaces an 800G ZR module adopting a coherent technology on a transmission distance of a data center 10KM, adopts an 8-wavelength laser emission module as a light source, adopts an 8-path MZ modulator and a wavelength division multiplexer to process an output optical signal at an output end, and adopts the wavelength division multiplexer and an 8-channel photodiode to process an input optical signal at an input end, so that no matter an input channel or an output channel only needs to adopt LC sockets of a single optical fiber, the upgrading of the data center is facilitated, the investment of adding optical fiber resources is not needed, and the MZ modulator and the wavelength division multiplexer at the output end and the wavelength division multiplexer and the 8-channel photodiode at the input end are all integrated by a single silicon chip, thereby realizing the purposes of low cost, reducing the module process length and loss and improving the cost performance. And the 800G LR8 optical module adopts QSFP-DD encapsulation, and has small volume and good compatibility.
In order that the above-described aspects may be better understood, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
Description of the specific embodimentsportions of the present invention are described.
Example 1:
referring to fig. 2 and 3, an embodiment of the present invention provides an 800g LR8 optical module, which includes an optical signal transmitting unit, an optical signal receiving unit, and an 8-channel DSP unit 4.
The optical signal transmitting unit comprises a laser transmitting module 13, an output end silicon optical monolithic integration module 9 and a modulator driving module 5, wherein the output end silicon optical monolithic integration module 9 is integrated with an 8-path MZ modulator and a wavelength division multiplexer, the modulator driving module 5 receives the data electric signal sent by an 8-channel DSP (Digital Signal Processor ) unit 4 and outputs a modulation signal to the output end silicon optical monolithic integration module 9, so that the output end silicon optical monolithic integration module 9 modulates and WDM processes the 8 laser signals transmitted by the laser transmitting module 13 and then converges the modulated 8 laser signals into an output optical signal containing 8 wavelengths;
the optical signal receiving unit comprises an input end silicon optical monolithic integration module 10 and a transimpedance amplifier 7, wherein a wavelength division multiplexer and an 8-channel photodiode are integrated on the input end silicon optical monolithic integration module 10, the input end silicon optical monolithic integration module 10 performs WDM processing on a received input optical signal containing 8 wavelengths and distributes the processed input optical signal to the photodiode of a corresponding channel to generate a photocurrent signal, the photocurrent signal is output to the transimpedance amplifier 7, the transimpedance amplifier 7 outputs an electric signal to the 8-channel DSP unit 4, and the 8-channel DSP unit 4 decodes the electric signal.
In practical application, the output end silicon optical monolithic integration module 9, which may also be called 8x100G PAM4 Silicon modulator&MUX (silicon modulator & multiplexer), may adopt a silicon optical monolithic integration technical system to integrate the 8-path MZ modulator and the wavelength division multiplexer at the TX (output channel) end on a single silicon wafer, and the modulated optical signals are subjected to WDM (Wavelength Division Multiplexing, optical wavelength division multiplexing) processing by the monolithic integrated wavelength division multiplexer and converged into one path of optical signal for output. In practice, the MZ modulator may be a silicon-based MZ modulator.
In practical application, as shown in fig. 3, the modulator driving module 5 may use 4x100g PAM4 (4-Level Pulse Amplitude Modulation, four-level pulse amplitude modulation) silicon optical driving modulators of two data communication modules, and amplify and output the data electrical signals transmitted by the 8-channel DSP unit 4 to drive the output end silicon optical monolithic integration module 9.
In practical application, the data electric signals sent by the 8-channel DSP units are 8 single-channel 100Gbps PAM4 signals, namely 8x100Gbps PAM4 signals.
In practical application, the input end silicon optical monolithic integrated module 10, which may also be called 8x100G PAM4 Silicon MUX&PD (silicon multiplexer & photodiode), may adopt a silicon optical integrated technology system to implement the integration of an 8-way wavelength division multiplexer and an 8-way PD at an RX (input channel) end on a single silicon wafer.
In practical application, the wavelength division multiplexers of the output end silicon optical monolithic integration module 9 and the input end silicon optical monolithic integration module 10 can be 8-path wavelength division multiplexers.
As shown in fig. 3, the transimpedance amplifier 7 may employ 4x100g PAM4 TIA (trans-impedance amplifier, transimpedance amplifier) of two data communication modules, and is configured to process the received photocurrent signal to output a single wave 100g PAM4 electric signal, and transmit the signal to the input port of the 8-channel DSP unit 4 via the PCB high-speed line.
The 8-channel DSP unit 4 may adopt a data module type transceiver integrated 8-channel DSP (Digital Signal Processing digital signal processing) device, where each channel 100g PAM4 channel implements signal processing in the 8-channel DSP unit 4: on the one hand, the 8-channel DSP unit 4 receives 100G PAM4 electric signals of 8 channels sent by the golden finger 1, eliminates signal jitter caused by a high-speed link through a signal processing function in the chip, improves transmission performance in a mode of adding check codes, then outputs a modulation signal to the output end silicon optical monolithic integration module 9 through the modulator driving module 5, modulates and WDM processes 8 laser signals emitted by the laser emission module 13 through the output end silicon optical monolithic integration module 9, and then converges the 8 laser signals into a beam of output optical signals containing 8 wavelengths, thereby establishing a high-speed emission electric signal channel of the 800G LR8 optical module; on the other hand, the input-end silicon optical monolithic integration module 10 performs WDM processing on the received input optical signals containing 8 wavelengths, distributes the processed input optical signals to photodiodes of corresponding channels to generate photocurrent signals, outputs the photocurrent signals to the transimpedance amplifier 7, processes the received photocurrent signals by the transimpedance amplifier 7 to output single-wave 100g PAM4 electric signals to the 8-channel DSP unit 4, eliminates signal jitter caused by an optical link in the chip of the 8-channel DSP unit 4 through a signal processing function, improves transmission performance in a mode of adding check codes, and finally outputs decoded single-wave 100g PAM4 electric signals to the golden finger 1, and the golden finger 1 transmits the single-wave 100g PAM4 electric signals to a MAC (Media Access Control, controller) chip of the system, thereby establishing a high-speed receiving electric signal channel of the 800g LR8 optical module.
In some possible solutions, referring to fig. 3, the laser emitting module 13 employs an 8-wavelength laser array, the 800g LR8 optical module further includes a silicon light control chip 11, the silicon light control chip 11 is electrically connected to the output silicon light monolithic integration module 9 and the input silicon light monolithic integration module 10 respectively, and drives each laser to emit light for each wavelength of laser by independent driving current, and controls parameters of the output silicon light monolithic integration module 9 and the input silicon light monolithic integration module 10.
In practical applications, the laser emitting module 13 may employ the following eight wavelength laser DFB:1295.56nm,1277.89nm,1304.58nm, 1286.6615 nm,1300.05nm,1282.26nm,1273.545nm and 1309.14nm, and the laser emitted by the DFB is collimated and then converged into the output end silicon optical monolithic integration module 9 for WDM and modulation.
The silicon light control chip 11 can adopt a special silicon light control chip to realize the output of driving current of an 8-channel DFB and drive the DFB to emit light, and meanwhile, a multi-channel DAC (Digital to Analog Converter, digital-to-analog converter) of the special chip can be used for outputting, so that the parameter control of the channels of each silicon light modulator of the silicon light monolithic integration module 9 at the output end is realized; and parameter control of each path of PD channel of the input end silicon optical monolithic integrated module 10.
In some possible solutions, referring to fig. 3, the optical signal emitting unit further includes a TEC control chip 12, where the TEC control chip 12 is electrically connected to the laser emitting module 13, and is used to adjust the temperature of the laser emitting module 13 to stabilize the 8 laser signals output by the laser emitting module 13.
In practical application, the TEC control chip 12 may be a TEC control chip with an output current up to 3A, so as to stabilize the wavelength of 8 output lasers of the 8 wavelength laser array, and achieve the wavelength stabilization of the 8 wavelength laser array in the full operating temperature range by means of TEC temperature control.
In some possible schemes, the optical signal transmitting unit further comprises a collimating lens, a converging lens and an optical fiber LC output interface 21, 8 laser signals transmitted by the laser transmitting module 13 are collimated by the collimating lens and then converged by the converging lens to enter the silicon light modulation input optical ports of each channel so as to enter the output end silicon light monolithic integration module 9, wherein the silicon light modulation input optical ports are arranged at the optical signal input end of the output end silicon light monolithic integration module 9; the optical fiber LC output interface 21 is electrically connected with the output end silicon optical monolithic integration module 9 and receives the output optical signal output by the output end silicon optical monolithic integration module 9.
In practical application, each beam of laser signal emitted by the laser emitting module 13 is modulated by the MZ modulator of the corresponding channel, and then converged into a beam of laser containing 8 wavelengths by the wavelength division multiplexer, and finally enters the optical fiber LC output interface 21 through the light outlet on the output end silicon optical monolithic integrated module 9 for output.
In practical applications, the fiber LC output interface 21 and the fiber LC input interface 22 may be single-mode fiber LC interfaces.
In some possible schemes, the 8-channel photodiode of the input-end silicon optical monolithic integrated module 10 is electrically connected with the transimpedance amplifier 7 by a gold wire binding mode.
In some possible solutions, referring to fig. 3, the optical signal receiving unit further includes an optical fiber LC input interface 22, where the optical fiber LC input interface 22 is electrically connected to the input-side silicon optical monolithic integrated module 10, and sends the received input optical signal containing 8 wavelengths to the input-side silicon optical monolithic integrated module 10.
In practical application, the input optical signals with 8 wavelengths received from the optical fiber LC input interface 22 may be directly input into the silicon optical monolithic integrated module 10 at the input end of the silicon optical integration through a single-mode optical fiber, the input optical signals with 8 wavelengths are distributed to the PDs of the corresponding channels through the wavelength division multiplexers integrated on the silicon optical monolithic integrated module 10 at the input end, and the PDs convert the received input optical signals with 8 wavelengths into photocurrent signals and output to the transimpedance amplifier 7 in a gold wire binding manner.
In some possible solutions, referring to fig. 3, the 800G LR8 optical module further includes a gold finger 1, where the gold finger 1 is electrically connected to the 8-channel DSP unit 4, and is configured to send an 8-channel 100G PAM4 electrical signal from the system MAC chip to the 8-channel DSP unit 4, and receive and send a single wave 100G electrical signal output by the 8-channel DSP unit 4 to the system MAC chip. The golden finger 1 is also electrically connected with the power supply unit 3, to which a main voltage of 3.3V is input.
In practical application, QSFP-DD standard can be adopted to package the golden finger 1, and PAM4 electric signal transmission of single channel 100G can be supported at most by optimizing impedance design of the golden finger 1.
The golden finger 1 realizes the signal connection between the 8-channel DSP unit 4 and the system board MAC chip on the HOST side of the 800G LR8 optical module, and realizes the signal connection between the 8-channel DSP unit 4 and the modulator driving module 5 and the transimpedance amplifier 7 on the LINE side of the 800G LR8 optical module.
In some possible solutions, the 800g LR8 light module further comprises a power supply unit 3, the power supply unit 3 providing power to the electronic components within the 800g LR8 light module.
The power supply unit 3 includes a 3.3V slow start circuit, and can step down or step up a 3.3V total power supply of an ONU (Optical Network Unit ) module to a level required by each unit circuit (such as an optical signal transmitting unit, an optical signal receiving unit, and an 8-channel DSP unit) through each circuit of a BUCK power supply circuit, and supply power to the corresponding unit circuit according to a specified time sequence.
As shown in fig. 3, a main voltage of 3.3V is connected to the power supply unit 3 from the golden finger 1, current jitter is eliminated when the main power supply is connected through the slow start circuit, and after the MCU control unit 2 completes initial start, control chips in the DC-DC step-down circuits in the unit circuits are enabled to start in sequence, so that 3.3V is reduced to 0.65V, 0.95V, 1.8V and the like required by the unit circuits.
In some possible solutions, please continue to refer to fig. 3, the 800g LR8 optical module further includes an MCU (Microcontroller Unit, micro control unit) control unit 2. The MCU control unit 2 is respectively and electrically connected with the golden finger 1, the power supply unit 3, the 8-channel DSP unit 4 and the silicon light control chip 11 so as to realize monitoring and indication of the working state of the 800G LR8 optical module; the MCU control unit 2 also communicates with a system MAC chip to realize management of the 800G LR8 optical module by the system MAC chip.
In practical application, the MCU control unit 2 is configured to monitor and instruct the working state of the entire 800g LR8 module, and communicate with the system MAC chip through IIC (Inter-Integrated Circuit, integrated circuit bus), so that the system MAC chip manages the optical module, and simultaneously, power-on timing management and initialization of related chips are implemented.
Specifically, the monitoring and indicating of the working state of the 800g LR8 module by the MCU control unit 2 may include the following aspects:
temperature monitoring, namely realizing accurate temperature monitoring in a module through a temperature sensor integrated in the MCU control unit 2;
the power supply voltage is monitored by an internal power supply voltage monitoring circuit integrated inside the MCU control unit 2;
8 paths of emitted light power monitoring, namely monitoring photocurrent in a corresponding proportion through a backlight PD integrated on an output end silicon light monolithic integration module 9, calculating the modulated output light power in a proportion calibration mode, finally monitoring the emitted light power through calibration data stored in an MCU control unit 2, and reporting a monitoring result to a system through a golden finger 1;
the method comprises the steps of monitoring received light power, carrying out continuous proportion mirror image on a photoelectric circuit of a PD integrated on an input end silicon optical monolithic integrated module 10 through a transimpedance amplifier 7, converting the photoelectric circuit into voltage, measuring the voltage obtained through conversion, calculating and realizing the monitoring of the received light power through calibration parameters in an MCU control unit 2, and reporting a monitoring result to a system through a golden finger 1;
and the bias current IBIAS of the DFB is monitored, the monitoring of IBIAS of the 8-wavelength lasers of the laser emitting module 13 is realized by reading a monitoring register of the silicon light control chip 11, and the monitoring result is reported to the system through the golden finger 1.
In some possible schemes, the 800g LR8 optical module is packaged using QSFP-DD packaging technology.
The 800G LR8 optical module of the embodiment replaces an 800G ZR module adopting a coherent technology on the transmission distance of a data center 10KM, adopts an 8-wavelength laser emission module as a light source, adopts an 8-path MZ modulator and a wavelength division multiplexer at an output end to process an output optical signal, and adopts the wavelength division multiplexer and an 8-channel photodiode at the output end to process an input optical signal, so that the upgrade of the data center is facilitated no matter whether an input channel or an output channel only needs to adopt LC sockets of single optical fiber, the investment of adding optical fiber resources is not needed, and the MZ modulator and the wavelength division multiplexer at the output end, the wavelength division multiplexer at the input end and the 8-channel photodiode are integrated by adopting a single silicon chip, thereby realizing the purposes of low cost, reducing the process length and loss of the module and improving the cost performance. And the 800G LR8 optical module adopts QSFP-DD encapsulation, and has small volume and good compatibility.
In the description of the present invention, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium; may be a communication between two elements or an interaction between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature is "on" or "under" a second feature, which may be in direct contact with the first and second features, or in indirect contact with the first and second features via an intervening medium. Moreover, a first feature "above," "over" and "on" a second feature may be a first feature directly above or obliquely above the second feature, or simply indicate that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is level lower than the second feature.
In the description of the present specification, the terms "one embodiment," "some embodiments," "examples," "particular examples," or "some examples," etc., refer to particular features, structures, materials, or characteristics described in connection with the embodiment or example as being included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that alterations, modifications, substitutions and variations may be made in the above embodiments by those skilled in the art within the scope of the invention.
Claims (10)
1. An 800g LR8 optical module, characterized in that the 800g LR8 optical module comprises an optical signal transmitting unit, an optical signal receiving unit and an 8-channel DSP unit (4);
the optical signal transmitting unit comprises a laser transmitting module (13), an output end silicon optical monolithic integration module (9) and a modulator driving module (5), wherein the output end silicon optical monolithic integration module (9) is integrated with an 8-channel MZ modulator and a wavelength division multiplexer, the modulator driving module (5) receives a data electric signal transmitted by the 8-channel DSP unit (4) and outputs a modulation signal to the output end silicon optical monolithic integration module (9), so that the output end silicon optical monolithic integration module (9) modulates and WDM processes 8 laser signals transmitted by the laser transmitting module (13) and then converges the modulated laser signals into a beam of output optical signals containing 8 wavelengths;
the optical signal receiving unit comprises an input end silicon optical monolithic integration module (10) and a transimpedance amplifier (7), wherein a wavelength division multiplexer and an 8-channel photodiode are integrated on the input end silicon optical monolithic integration module (10), the input end silicon optical monolithic integration module (10) distributes received input optical signals containing 8 wavelengths into the photodiode of a corresponding channel after WDM processing to generate photocurrent signals, the photocurrent signals are output to the transimpedance amplifier (7), the transimpedance amplifier (7) outputs electric signals to the 8-channel DSP unit (4), and the 8-channel DSP unit (4) decodes the electric signals.
2. The 800g LR8 light module as claimed in claim 1, wherein the 800g LR8 light module further comprises a silicon light control chip (11);
the laser emitting module (13) adopts a laser array with 8 wavelengths;
the silicon light control chip (11) is respectively and electrically connected with the output end silicon light monolithic integration module (9) and the input end silicon light monolithic integration module (10), provides independent driving current for each wavelength laser to drive each laser to emit light, and controls parameters of the output end silicon light monolithic integration module (9) and the input end silicon light monolithic integration module (10).
3. The 800g LR8 optical module as claimed in claim 2, wherein the optical signal emitting unit further comprises a TEC control chip (12), the TEC control chip (12) being electrically connected to the laser emitting module (13) for adjusting the temperature of the laser emitting module (13) to stabilize the 8 laser signals output therefrom.
4. The 800g LR8 optical module of claim 1, wherein the optical signal emitting unit further comprises a collimating lens, a converging lens and a fiber LC output interface (21);
the 8-beam optical signals emitted by the laser emission module (13) are collimated by the collimating lens and then converged by the converging lens to enter the silicon optical modulation input optical ports of all channels so as to enter the output end silicon optical monolithic integration module (9), wherein the silicon optical modulation input optical ports are arranged at the optical signal input end of the output end silicon optical monolithic integration module (9);
the optical fiber LC output interface (21) is electrically connected with the output end silicon optical monolithic integration module (9) and receives an output optical signal output by the output end silicon optical monolithic integration module (9).
5. The 800g LR8 optical module of claim 1, wherein the 8-channel photodiode of the input silicon optical monolithic module (10) is electrically connected to the transimpedance amplifier (7) by way of gold wire bonding.
6. The 800g LR8 optical module of claim 1, wherein the optical signal receiving unit further includes a fiber LC input interface (22), the fiber LC input interface (22) being electrically connected to the input silicon optical monolithic module (10) and transmitting the received input optical signal containing 8 wavelengths to the input silicon optical monolithic module (10).
7. The 800g LR8 optical module of claim 2, further comprising a gold finger (1), the gold finger (1) being electrically connected to the 8-channel DSP unit (4) for sending a 100g PAM4 electrical signal from the 8-channel of the system MAC chip to the 8-channel DSP unit (4), and receiving and sending a single 100g PAM4 electrical signal output by the 8-channel DSP unit (4) to the system MAC chip.
8. The 800g LR8 optical module as claimed in claim 7, wherein the 800g LR8 optical module further comprises a power supply unit (3), the power supply unit (3) receiving a main power input from the gold finger (1) and supplying power to the electronic components within the 800g LR8 optical module.
9. The 800g LR8 light module as claimed in claim 8, wherein the 800g LR8 light module further comprises an MCU control unit (2);
the MCU control unit (2) is respectively and electrically connected with the golden finger (1), the power supply unit (3), the 8-channel DSP unit (4) and the silicon light control chip (11) so as to monitor and indicate the working state of the 800G LR8 light module;
the MCU control unit (2) is also communicated with a system MAC chip to realize the management of the 800G LR8 optical module by the system MAC chip.
10. The 800g LR8 optical module of claim 9, wherein the 800g LR8 optical module is packaged using a QSFP-DD packaging technique.
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| CN202410120261.0A CN117650848A (en) | 2024-01-29 | 2024-01-29 | 800G LR8 optical module |
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104601244A (en) * | 2014-12-22 | 2015-05-06 | 武汉电信器件有限公司 | 400 Gbps hot-plug high-speed optical transceiver module |
| CN112904496A (en) * | 2021-01-14 | 2021-06-04 | 众瑞速联（武汉）科技有限公司 | Silicon optical integrated module |
| CN113036594A (en) * | 2021-03-31 | 2021-06-25 | 杭州芯耘光电科技有限公司 | Silicon-based photoelectric chip |
| CN113346955A (en) * | 2021-08-05 | 2021-09-03 | 深圳市迅特通信技术股份有限公司 | ONU module used in passive optical network above 50G |
| CN113596634A (en) * | 2021-07-30 | 2021-11-02 | 武汉光迅科技股份有限公司 | Combo PON OLT monolithic integrated chip and optical assembly thereof |
| CN214756361U (en) * | 2021-02-10 | 2021-11-16 | 苏州旭创科技有限公司 | Photon integrated chip, light emitting component and light receiving and transmitting module |
| US11178473B1 (en) * | 2020-06-05 | 2021-11-16 | Marvell Asia Pte, Ltd. | Co-packaged light engine chiplets on switch substrate |
| US20210385000A1 (en) * | 2020-06-05 | 2021-12-09 | Inphi Corporation | In-packaged multi-channel light engine on single substrate |
| CN215416013U (en) * | 2021-09-07 | 2022-01-04 | 武汉兴思为光电科技有限公司 | Airtight packaged silicon light 400G optical module |
| CN114647030A (en) * | 2022-05-19 | 2022-06-21 | 深圳市迅特通信技术股份有限公司 | Silicon-based photoelectronic receiving and transmitting integrated chip for PON OLT system |
| CN115085001A (en) * | 2022-07-19 | 2022-09-20 | 成都英思嘉半导体技术有限公司 | High-speed Mach-Zehnder driver chip controlled by integrated silicon optical integrated circuit |
| CN115276875A (en) * | 2022-07-18 | 2022-11-01 | 希烽光电科技(南京)有限公司 | 100G ultra-long distance communication optical module and wavelength division multiplexing system |
| US20230253760A1 (en) * | 2021-10-12 | 2023-08-10 | Zhejiang Lab | 6.4 tbps silicon-based photonics engine transceiver chip module for high-speed optical communication |
| CN117278892A (en) * | 2023-11-22 | 2023-12-22 | 深圳市迅特通信技术股份有限公司 | Silicon optical integrated chip, PON silicon optical OLT module and working method thereof |
-
2024
- 2024-01-29 CN CN202410120261.0A patent/CN117650848A/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104601244A (en) * | 2014-12-22 | 2015-05-06 | 武汉电信器件有限公司 | 400 Gbps hot-plug high-speed optical transceiver module |
| US11178473B1 (en) * | 2020-06-05 | 2021-11-16 | Marvell Asia Pte, Ltd. | Co-packaged light engine chiplets on switch substrate |
| US20210385000A1 (en) * | 2020-06-05 | 2021-12-09 | Inphi Corporation | In-packaged multi-channel light engine on single substrate |
| CN112904496A (en) * | 2021-01-14 | 2021-06-04 | 众瑞速联（武汉）科技有限公司 | Silicon optical integrated module |
| CN214756361U (en) * | 2021-02-10 | 2021-11-16 | 苏州旭创科技有限公司 | Photon integrated chip, light emitting component and light receiving and transmitting module |
| CN113036594A (en) * | 2021-03-31 | 2021-06-25 | 杭州芯耘光电科技有限公司 | Silicon-based photoelectric chip |
| CN113596634A (en) * | 2021-07-30 | 2021-11-02 | 武汉光迅科技股份有限公司 | Combo PON OLT monolithic integrated chip and optical assembly thereof |
| CN113346955A (en) * | 2021-08-05 | 2021-09-03 | 深圳市迅特通信技术股份有限公司 | ONU module used in passive optical network above 50G |
| CN215416013U (en) * | 2021-09-07 | 2022-01-04 | 武汉兴思为光电科技有限公司 | Airtight packaged silicon light 400G optical module |
| US20230253760A1 (en) * | 2021-10-12 | 2023-08-10 | Zhejiang Lab | 6.4 tbps silicon-based photonics engine transceiver chip module for high-speed optical communication |
| CN114647030A (en) * | 2022-05-19 | 2022-06-21 | 深圳市迅特通信技术股份有限公司 | Silicon-based photoelectronic receiving and transmitting integrated chip for PON OLT system |
| CN115276875A (en) * | 2022-07-18 | 2022-11-01 | 希烽光电科技(南京)有限公司 | 100G ultra-long distance communication optical module and wavelength division multiplexing system |
| CN115085001A (en) * | 2022-07-19 | 2022-09-20 | 成都英思嘉半导体技术有限公司 | High-speed Mach-Zehnder driver chip controlled by integrated silicon optical integrated circuit |
| CN115528534A (en) * | 2022-07-19 | 2022-12-27 | 成都英思嘉半导体技术有限公司 | High-speed Mach-Zehnder driver chip controlled by integrated silicon optical integrated circuit |
| CN115642474A (en) * | 2022-07-19 | 2023-01-24 | 成都英思嘉半导体技术有限公司 | High-speed Mach-Zehnder driver chip controlled by integrated silicon optical integrated circuit |
| CN117278892A (en) * | 2023-11-22 | 2023-12-22 | 深圳市迅特通信技术股份有限公司 | Silicon optical integrated chip, PON silicon optical OLT module and working method thereof |
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