CN117572193A - Online measurement system and method for SiC MOSFET gate leakage current - Google Patents
Online measurement system and method for SiC MOSFET gate leakage current Download PDFInfo
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- CN117572193A CN117572193A CN202311657066.3A CN202311657066A CN117572193A CN 117572193 A CN117572193 A CN 117572193A CN 202311657066 A CN202311657066 A CN 202311657066A CN 117572193 A CN117572193 A CN 117572193A
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- 238000005259 measurement Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims description 11
- 238000005070 sampling Methods 0.000 claims description 7
- 238000009738 saturating Methods 0.000 claims description 4
- 238000000691 measurement method Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 30
- 229910010271 silicon carbide Inorganic materials 0.000 description 29
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013481 data capture Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/52—Testing for short-circuits, leakage current or ground faults
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses an on-line measurement system and method for SiC MOSFET gate leakage current, wherein the system comprises an external voltage source V ext Diode clamp circuit, instrumentation amplifier, rectifier and integrator. The method provided by the invention converts the noisy high-frequency waveform into the low-frequency unipolar signal which can be easily measured by the low-cost ADC by tracking the grid charge instead of the grid current, and solves the problems of high grid leakage current frequency and wide dynamic range which are difficult to directly measure. The measuring system provided by the invention has a simple structure and low cost, can be easily integrated into a driving circuit, and can be used for state monitoring and residual life prediction of the SiC MOSFET.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to an on-line measurement system and method for SiC MOSFET gate leakage current.
Background
Silicon carbide (SiC) based power converters have superior performance compared to conventional silicon devices, and can meet the demands for high power density, high efficiency power converters. Although the failure rate of SiC has been reduced in recent years, the degradation of its fragile gate oxide remains a major reliability issue, impeding the widespread adoption of SiC in safety critical applications such as traffic, industrial and military systems. By on-line condition monitoring of the device, catastrophic failure of the SiC-based power converter can be prevented. Current research indicates that degraded SiC MOSFETs leave a range of variations in several device parameters, such as forward voltage drop of the body diode, threshold voltage, on-state drain-source resistance, on-state gate leakage current, junction temperature, case temperature, on-time, off-time, etc. Measuring the above-mentioned characteristic parameters is not easy in practice, and complex circuitry and high frequency, high resolution analog-to-digital converter (ADC) sampling are often required.
Among these parameters, the on-state gate leakage current has been demonstrated to be one of the most consistent parameters that monotonically varies with degradation. But estimating the on-state gate current by measuring the gate current is a difficult task. Due to the presence of the gate capacitance, the charge-discharge transients significantly affect the gate current waveform. The parasitic inductance introduces second order oscillations, making the estimation more complex. Any state monitoring circuit based solely on gate current peak detection is prone to false positive alarms. In a normal SiC device, the gate leakage current in the on state is about several hundred nA. The on-state gate leakage current of the degraded device while maintaining normal operation is about 10-25mA. In contrast, even in a healthy state, the measured gate current is in the range of several amperes. This difference in amplitude makes estimation of on-state gate leakage current difficult and requires extensive and high resolution data capture. In addition, in order to extract information from only the steady-state portion of the gate current waveform, high-precision sampling is required to measure the gate leakage current of the on-state. If complex digital circuitry is used for condition monitoring, the cost and complexity may be prohibitive compared to the benefit.
Disclosure of Invention
In order to overcome the defects in the prior art, the on-line measurement system and method for the grid leakage current of the SiC MOSFET provided by the invention track the grid charge instead of the grid current, so that a noisy high-frequency waveform is converted into a low-frequency unipolar signal which can be easily measured by a low-cost ADC, and the problems that the grid leakage current is high in frequency and wide in dynamic range and is difficult to directly measure are solved. And the measuring system has simple structure and low cost, can be easily integrated into a driving circuit, and the measuring result can be used for state monitoring and residual life prediction of the SiC MOSFET.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
an on-line measurement system for the gate leakage current of SiC MOSFET is provided, which comprises an external voltage source V ext The device comprises a diode clamping circuit, an instrument amplifier, a rectifier and an integrator; the input ends of the diode clamping circuits are respectively connected with a grid resistor R g One end of (1) gate resistance R g Is connected with the other end of the external power supply V ext The method comprises the steps of carrying out a first treatment on the surface of the The output end of the diode clamping circuit is connected with the input end of the instrument amplifier; the output end of the instrument amplifier is connected with the input end of the rectifier; the output end of the rectifier is connected with the input end of the integrator; output voltage v of integrator s The output of the measuring circuit;
a diode clamp circuit for preventing common mode voltage swing of the differential voltage input to the instrumentation amplifier;
instrumentation amplifier for measuring external grid resistance R g Differential voltage V across rg Estimating the gate leakage current in the on state and converting the differential voltage into a single-ended output voltage;
the rectifier is used for preventing negative voltage output by the instrumentation amplifier from being transmitted to the integrator, so that grid leakage current in a conducting state is underestimated;
and an integrator for converting the gate leakage current in the on state into a total charge into the gate.
Further, the diode-clamping circuit includes a diode D1; the anode of the diode D1 is respectively connected with the grid electrode of the SiC MOSFET and one end of a grid resistor Rg; the cathode of the diode D1 is respectively connected with one end of a resistor Rb, the inverting input end of the instrument amplifier and the cathode of the diode D3; the positive electrode of the diode D3 is respectively connected with the external power source Vext and the positive electrode of the diode D4; the cathode of the diode D4 is respectively connected with the non-inverting input end of the instrumentation amplifier, the cathode of the diode D2 and one end of the resistor Ra; the other end of the resistor Ra is respectively connected with the other end of the resistor Rb and the source electrode of the SiC MOSFET and is grounded; the anode of the diode D2 is connected to the other end of the gate resistor Rg.
Further, the output of the instrumentation amplifier is connected to the input of the rectifier.
Further, the rectifier includes a resistor R 1 Resistance R 1 Is connected with the output end of the instrument amplifier; resistor R 1 Respectively with resistor R at the other end 2 One end of diode D 5 Negative electrode of (a) and operational amplifier X 1 Is connected with the inverting input terminal of the circuit; the non-inverting input end of the operational amplifier is grounded, and the output end of the operational amplifier is respectively connected with the diode D 5 Positive electrode of (D) and diode D 6 Is connected with the negative electrode of the battery; diode D 6 Positive electrode of (d) and resistor R 2 Is connected at the other end as the output of the rectifier.
Further, the integrator comprises a resistor R 0 Resistance R 0 Is connected with the output of the rectifier; resistor R 0 The other end of (a) is respectively connected with a switch S 1 One end of (C) capacitor 0 And an operational amplifier X 2 Is connected with the inverting input terminal of the circuit; operational amplifier X 2 The non-inverting input end of (2) is grounded, and the output end is respectively connected with the switch S 1 And the other end of (C) and the capacitor C 0 And the other end of the filter is connected as the output of the integrator.
The on-line measurement method for the SiC MOSFET gate leakage current comprises the following steps:
s1, connecting an input end of a diode clamping circuit with a grid resistor R of a SiC MOSFET to be tested g Two ends are connected, the output end is connected to the input end of the instrument amplifier, and R is eliminated g Upper differential voltage v rg Common mode voltage swing during device switching;
s2, using an instrument amplifier to make the differential voltage v rg Conversion to single-ended output voltage v 1 ；
S3, eliminating v through rectifier 1 Output voltage v 2 ；
S4, the voltage v is converted by an integrator 2 Integrating the output voltage v of the integrator s Performing low-frequency sampling to complete on-line measurement of gate leakage current, and performing time T s The capacitor is discharged preventing the integrator from saturating.
The beneficial effects of the invention are as follows: by tracking the gate charge rather than the gate current, the noisy high frequency waveform is converted to a low frequency unipolar signal that can be easily measured with a low cost ADC, solving the problems of high gate leakage frequency, wide dynamic range, and difficult direct measurement. The system has simple structure and low cost, can be easily integrated into a driving circuit, and the measurement result can be used for state monitoring and residual life prediction of the SiC MOSFET.
Drawings
FIG. 1 is a circuit diagram of a system of the present invention;
fig. 2 is a graph comparing the measurement results of a healthy MOSFET and a degraded MOSFET in the embodiment.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and all the inventions which make use of the inventive concept are protected by the spirit and scope of the present invention as defined and defined in the appended claims to those skilled in the art.
As shown in FIG. 1, the on-line measurement system of the SiC MOSFET gate leakage current comprises an external voltage source Vext, a diode clamping circuit, an instrument amplifier, a rectifier and an integrator; the input end of the diode clamping circuit is respectively connected with one end of the grid resistor Rg, the other end of the grid resistor Rg and the external power supply Vext; the output end of the diode clamping circuit is connected with the input end of the instrument amplifier; the output end of the instrument amplifier is connected with the input end of the rectifier; the output end of the rectifier is connected with the input end of the integrator; the output voltage vs of the integrator is the output of the measuring circuit;
a diode clamp circuit for preventing common mode voltage swing of the differential voltage input to the instrumentation amplifier;
the instrument amplifier is used for measuring the differential voltage Vrg on the external grid resistor Rg to estimate grid leakage current in a conducting state and converting the differential voltage into single-ended output voltage;
the rectifier is used for preventing negative voltage output by the instrumentation amplifier from being transmitted to the integrator, so that grid leakage current in a conducting state is underestimated;
and an integrator for converting the gate leakage current in the on state into a total charge into the gate.
The diode clamping circuit comprises a diode D1; the anode of the diode D1 is respectively connected with the grid electrode of the SiC MOSFET and one end of a grid resistor Rg; the cathode of the diode D1 is respectively connected with one end of a resistor Rb, the inverting input end of the instrument amplifier and the cathode of the diode D3; the positive electrode of the diode D3 is respectively connected with the external power source Vext and the positive electrode of the diode D4; the cathode of the diode D4 is respectively connected with the non-inverting input end of the instrumentation amplifier, the cathode of the diode D2 and one end of the resistor Ra; the other end of the resistor Ra is respectively connected with the other end of the resistor Rb and the source electrode of the SiC MOSFET and is grounded; the anode of the diode D2 is connected to the other end of the gate resistor Rg.
The output end of the instrument amplifier is connected with the input end of the rectifier.
The rectifier comprises a resistor R1, and one end of the resistor R1 is connected with the output end of the instrument amplifier; the other end of the resistor R1 is respectively connected with one end of the resistor R2, the cathode of the diode D5 and the inverting input end of the operational amplifier X1; the non-inverting input end of the operational amplifier is grounded, and the output end of the operational amplifier is respectively connected with the anode of the diode D5 and the cathode of the diode D6; the anode of the diode D6 is connected to the other end of the resistor R2 as the output of the rectifier.
The integrator comprises a resistor R0, and one end of the resistor R0 is connected with the output of the rectifier; the other end of the resistor R0 is respectively connected with one end of the switch S1, one end of the capacitor C0 and the inverting input end of the operational amplifier X2; the non-inverting input end of the operational amplifier X2 is grounded, and the output end of the operational amplifier X2 is respectively connected with the other end of the switch S1 and the other end of the capacitor C0 to be used as the output of the integrator.
The on-line measurement method of the SiC MOSFET gate leakage current comprises the following steps:
s1, connecting the input end of a diode clamping circuit with two ends of a grid resistor Rg of a SiC MOSFET to be tested, and connecting the output end of the diode clamping circuit to the input end of an instrument amplifier to eliminate common-mode voltage swing of differential voltage vrg on Rg in the switching process of the device;
s2, converting the differential voltage vrg into single-ended output voltage v1 through an instrument amplifier;
s3, eliminating negative voltage in v1 through a rectifier, and outputting voltage v2;
s4, integrating the voltage v2 through an integrator, and outputting the voltage v of the integrator s Performing low-frequency sampling to complete on-line measurement of gate leakage current, and performing time T s The capacitor is discharged preventing the integrator from saturating.
By measuring differential voltage v across external gate resistance Rg rg To estimate the on-state gate leakage. The instrumentation amplifier converts the differential voltage to a single-ended output v referenced to the measurement circuit ground 1 . Typically, a 20V gate-source voltage is used to turn on the SiC MOSFET and a-5V voltage is used to turn it off. During a switching event, this voltage difference appears as a common mode voltage swing at the instrumentation amplifier input, potentially saturating and distorting the output waveform. A diode clamp is placed at the input of the instrumentation amplifier to prevent this voltage swing. In the reverse recovery process, a large resistance R a And R is b As a discharge path for the diode.
Selecting an external voltage V ext For example 15V) near the gate driver on state output voltage (20V). Ensuring that the minimum voltage at any one of the inputs of the instrumentation amplifier is clamped to V ext Thereby reducing the common mode voltage swing. In addition, the clamp circuit can selectively draw the on-state portion of the gate current because the instrumentation amplifier differential input is zero during the MOSFET off-state.
The output voltage of the instrumentation amplifier in principle tracks the gate current of the on state. However, even with the use of a diode clamp circuit at the instrumentation amplifier input, the differential voltage at the input becomes negative during the MOSFET turn-off event. The output voltage of the grid driver reaches-5V instantly, and the grid source voltage is still larger than the external voltage V ext . This results in a signal at the instrumentation amplifier output v 1 Negative voltages are present and may underestimate the on-state gate leakage. A rectifier connected after the instrumentation amplifier prevents negative voltage from propagating to the productAnd a divider. The next step is to output v through the integrator 2 Integration is performed to estimate the total charge that enters the gate during the MOSFET on state. Output v to integrator s Low frequency sampling to estimate on-state gate leakage current of device while at intervals T s Counter capacitor C 0 Discharge is performed to prevent the integrator from being saturated.
In one embodiment of the invention, experimental measurement is carried out on a healthy SiC MOSFET (with an on-state gate leakage current of 0 mA) and a degraded SiC MOSFET (with an on-state gate leakage current of 19 mA) respectively, the frequency of a gate driving signal of the detected SiC MOSFET is 100kHz, the on-state voltage of 50% of the duty ratio is 20V, the off-state voltage is-5V, and a voltage source V is externally connected ext 15V, integrator capacitor discharge interval time T s 0.1s.
V by low frequency sampling (1 kHz) s The collection was performed to obtain two measurements of SiC MOSFETs such as shown in fig. 2, with significantly increased measurements of the degraded SiC MOSFETs compared to the healthy SiC MOSFETs.
In summary, the on-line measurement system and method for the gate leakage current of the SiC MOSFET provided by the present invention track the gate charge instead of the gate current, so as to convert the noisy high-frequency waveform into the low-frequency unipolar signal that can be easily measured by the low-cost ADC, and solve the problems of high frequency of the gate leakage current and wide dynamic range that are difficult to directly measure. And the measuring system has simple structure and low cost, can be easily integrated into a driving circuit, and the measuring result can be used for state monitoring and residual life prediction of the SiC MOSFET.
Claims (6)
1. An on-line measurement system for the gate leakage current of a SiC MOSFET is characterized by comprising an external voltage source V ext The device comprises a diode clamping circuit, an instrument amplifier, a rectifier and an integrator; the input ends of the diode clamping circuits are respectively connected with a grid resistor R g One end of (1) gate resistance R g Is connected with the other end of the external power supply V ext The method comprises the steps of carrying out a first treatment on the surface of the The output end of the diode clamping circuit is connected with the input end of the instrument amplifier; the output end of the instrument amplifier is connected with the input end of the rectifier; the finishing machineThe output end of the flow device is connected with the input end of the integrator; the output voltage v of the integrator s The output of the measuring circuit;
the diode clamping circuit is used for preventing common-mode voltage swing of the input differential voltage of the instrumentation amplifier;
the instrument amplifier is used for measuring the external grid resistance R g Differential voltage V across rg Estimating the gate leakage current in the on state and converting the differential voltage into a single-ended output voltage;
the rectifier is used for preventing negative voltage output by the instrumentation amplifier from being transmitted to the integrator, so that grid leakage current in a conducting state is underestimated;
the integrator is used for converting the grid leakage current in the conducting state into the total charge entering the grid.
2. An in-line measurement system of SiC MOSFET gate leakage current as defined in claim 1, wherein said diode clamp circuit comprises a diode D 1 The method comprises the steps of carrying out a first treatment on the surface of the Diode D 1 The positive electrode of (a) is respectively connected with the grid electrode and the grid electrode resistor R of the SiC MOSFET g Is a member of the group; diode D 1 The negative electrodes of (a) are respectively connected with a resistor R b Is connected to the inverting input of the instrumentation amplifier and diode D 3 Is a negative electrode of (a); the diode D 3 The positive poles of the two are respectively connected with an external power supply V ext And diode D 4 Is a positive electrode of (a); the diode D 4 The negative pole of the (B) is respectively connected with the non-inverting input end of the instrument amplifier and the diode D 2 Negative electrode of (2) and resistance R a Is a member of the group; the resistor R a The other ends of (a) are respectively connected with a resistor R b The other end of the (C) and the source electrode of the SiC MOSFET are grounded; the diode D 2 Positive electrode and gate resistance R of (2) g Is connected to the other end of the pipe.
3. An in-line measurement system of SiC MOSFET gate leakage current according to claim 1, in which the output of the instrumentation amplifier is connected to the input of a rectifier.
4. An in-line measurement system of SiC MOSFET gate leakage current as defined in claim 1, wherein said rectifier includes a resistor R 1 Resistance R 1 Is connected with the output end of the instrument amplifier; resistor R 1 Respectively with resistor R at the other end 2 One end of diode D 5 Negative electrode of (a) and operational amplifier X 1 Is connected with the inverting input terminal of the circuit; the non-inverting input end of the operational amplifier is grounded, and the output end of the operational amplifier is respectively connected with the diode D 5 Positive electrode of (D) and diode D 6 Is connected with the negative electrode of the battery; diode D 6 Positive electrode of (d) and resistor R 2 Is connected at the other end as the output of the rectifier.
5. An in-line measurement system of SiC MOSFET gate leakage current as defined in claim 1, wherein said integrator comprises a resistor R 0 Resistance R 0 Is connected with the output of the rectifier; resistor R 0 The other end of (a) is respectively connected with a switch S 1 One end of (C) capacitor 0 And an operational amplifier X 2 Is connected with the inverting input terminal of the circuit; operational amplifier X 2 The non-inverting input end of (2) is grounded, and the output end is respectively connected with the switch S 1 And the other end of (C) and the capacitor C 0 And the other end of the filter is connected as the output of the integrator.
6. An on-line measurement method of SiC MOSFET gate leakage current is characterized by comprising the following steps:
s1, connecting an input end of a diode clamping circuit with a grid resistor R of a SiC MOSFET to be tested g Two ends are connected, the output end is connected to the input end of the instrument amplifier, and R is eliminated g Upper differential voltage v rg Common mode voltage swing during device switching;
s2, using an instrument amplifier to make the differential voltage v rg Conversion to single-ended output voltage v 1 ；
S3, eliminating v through rectifier 1 Output voltage v 2 ；
S4, the voltage v is converted by an integrator 2 Integrating the output voltage v of the integrator s Performing low-frequency sampling to complete on-line measurement of gate leakage current, and performing time T s The capacitor is discharged preventing the integrator from saturating.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311657066.3A CN117572193A (en) | 2023-12-04 | 2023-12-04 | Online measurement system and method for SiC MOSFET gate leakage current |
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| CN202311657066.3A CN117572193A (en) | 2023-12-04 | 2023-12-04 | Online measurement system and method for SiC MOSFET gate leakage current |
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| CN117572193A true CN117572193A (en) | 2024-02-20 |
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