CN111426928B - Dynamic resistance test circuit for gallium nitride device - Google Patents
Dynamic resistance test circuit for gallium nitride device Download PDFInfo
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- CN111426928B CN111426928B CN201811583665.4A CN201811583665A CN111426928B CN 111426928 B CN111426928 B CN 111426928B CN 201811583665 A CN201811583665 A CN 201811583665A CN 111426928 B CN111426928 B CN 111426928B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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Abstract
A dynamic resistance test circuit of a gallium nitride device comprises a gate driving module, a clamping circuit and a load module, wherein the gate driving module is used for driving the device to be tested, the other end of the load module is connected with a power supply DC, the clamping circuit comprises a voltage stabilizing module and a high-voltage diode D1, the anode of the high-voltage diode D1 is connected with one end of the voltage stabilizing module, the cathode of the high-voltage diode D1 is connected with one end of the load module and is used for being connected with the drain electrode of the gallium nitride device to be tested, the other end of the voltage stabilizing module is connected with a power ground and is used for being connected with the source electrode of the gallium nitride device to be tested, the clamping circuit further comprises a constant current module, and constant current output by the constant current module flows to the gallium nitride device to be tested through the high-voltage diode D1. The grid control signal of the device to be tested is provided by the driving module, the current flowing through the high-voltage diode when the device to be tested is conducted is provided by the constant current module, the voltage measured by the voltage detection point when the device to be tested is turned off is stabilized by the voltage stabilizing module, and the oscillation generated at the moment of switching of the switch of the device to be tested is suppressed by the filtering module.
Description
Technical Field
The invention mainly relates to the field of reliability test and analysis of high-voltage power semiconductor devices, in particular to a dynamic resistance test circuit of a gallium nitride device, which is a test circuit for solving the problem of the reliability of the dynamic resistance of heterojunction devices such as gallium nitride high-electron-mobility transistors and the like, is suitable for evaluating the degradation degree of the on-resistance of the devices after high-voltage stress, is an important means for analyzing the resistance degradation mechanism, and provides theoretical and technical support for improving the reliability of the devices.
Background
With the increasing awareness of global energy conservation and environmental protection, clean and environmental protection industries such as electric vehicles and intelligent household appliances are rapidly developed, and requirements for higher conversion efficiency, higher switching speed and lower loss are provided for semiconductor power devices. Third-generation semiconductor materials represented by gallium nitride (GaN) exhibit significant competitiveness in the fields of switching power supplies, motor controllers, grid-connected inverters and the like by virtue of excellent performance advantages. In the above application fields, however, gallium nitride devices are exposed to high-voltage operating environments. Under the condition of high-voltage stress, a current collapse effect can be excited, which is shown in the fact that the on-resistance value of the gallium nitride device after the gallium nitride device is turned on and off is dynamically changed by the high-voltage stress in an off state, and the problem that the circuit loss is difficult to estimate is caused. In order to accurately calculate the circuit loss, the dynamic resistance needs to be tested and analyzed. In a conventional test means, the drain voltage of the gallium nitride device under test is directly measured, usually with an oscilloscope, and the on-resistance of the device is calculated using the measured voltage value and the value of the current flowing through the device. However, in the process from turning off to turning on of the device, the drain voltage drops from hundreds of volts to hundreds of millivolts, and the accuracy of the oscilloscope cannot meet the requirement of accurately recording the voltage change in the process, so that the on-resistance value of the device is difficult to accurately calculate.
Disclosure of Invention
Aiming at the problems, the invention provides a dynamic resistance test circuit of a gallium nitride device, which has high test precision.
The invention adopts the following technical scheme:
a circuit for testing the dynamic resistance of a gallium nitride device, comprising: the grid driving circuit comprises a grid driving module, a clamping circuit and a load module, wherein the grid driving module is used for driving a device to be tested, the other end of the load module is connected with a power supply DC, the clamping circuit comprises a voltage stabilizing module and a high-voltage diode D1, the anode of the high-voltage diode D1 is connected with one end of the voltage stabilizing module, the cathode of the high-voltage diode D1 is connected with one end of the load module and is used for being connected with the drain electrode of the gallium nitride device to be tested, the other end of the voltage stabilizing module is connected with a power ground and is used for being connected with the source electrode of the gallium nitride device to be tested, the clamping circuit further comprises a constant current module, and constant current output by the constant current module flows to the gallium nitride device to be tested through the high-voltage diode D1.
Preferably, a filtering module is connected in parallel to the voltage stabilizing module.
Preferably, the filtering module is a series loop of a capacitor C1 and a resistor R2, and the capacitance value and the resistance value are adjustable.
Preferably, the load module is a clamp inductive load, and comprises a power inductor L1 and a freewheeling diode D2.
Preferably, the high voltage diode D1 in the clamp circuit is a 600V silicon carbide schottky diode.
Preferably, the voltage stabilizing module is formed by connecting a voltage stabilizing diode Z1 and a resistor R1 in series.
Preferably, the constant current module adopts a constant current source IsourceThe constant current value is 10mA, and is connected with a common diode D3 in series for preventing current from backflushing and protecting equipment.
The invention has the following advantages:
1. when the voltage of the voltage detection point is detected by an oscilloscope, the voltage change is within the range of 0-10V, and the test precision is greatly improved. When the tested device is turned off, the voltage at two ends of the device is the power supply voltage V0(V0 is greater than or equal to 100V), and the voltage detection point voltage is V1(V1 is less than 10V). The sampling bit number of the oscilloscope is generally 8 bits, and the conventional test method is adopted, if the voltage is a power supply voltage of 400V with V0, the test precision is V0 divided by 256(28), which is equal to 1.56V, and the conduction voltage drop of the device to be tested at the time of starting is generally hundreds of millivolts, so that obviously, the precision of the test oscilloscope cannot meet the requirement. When the test method is adopted, the test precision is V1 divided by 256(28) and is equal to 19.5mV when the voltage V1 of the voltage test point measured by an oscilloscope is 5V, so that the required test precision can be met. Therefore, the test circuit can obviously improve the test precision.
2. The current flowing through the high-voltage diode is constant current, the voltage drop of the diode is constant, and the measured voltage is more accurate. To avoid accuracy problems with the oscilloscope, the technician typically uses external component devices, but usually ignores component parameter variations (e.g., voltage drop variations of the high voltage diode of the present invention). Considering that the measured voltage value is very close to the voltage drop of the high-voltage diode, and therefore the voltage drop of the diode caused by the current change flowing through the high-voltage diode cannot be ignored, the constant current module is adopted in the invention to ensure that the voltage drop of the high-voltage diode is constant.
3. The parasitic parameters of the used components are small, and the circuit oscillation can be reduced. The invention uses the high-voltage diode (such as a silicon carbide Schottky diode) with relatively small parasitic parameters as a high-voltage blocking component, and other components in the clamping circuit can be small-sized, so that the parasitic parameters are reduced, relatively few components are needed for realizing the functions, and the oscillation caused by adding the clamping circuit can be reduced to the minimum.
Drawings
FIG. 1 is a schematic diagram of a test circuit of the present invention.
FIG. 2 is one embodiment of the test circuit of the present invention.
Fig. 3 is a simulation result of example 1.
FIG. 4 is another embodiment of the test circuit of the present invention.
Fig. 5 is a simulation result of example 2.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
A circuit for testing the dynamic resistance of a gallium nitride device, comprising: the clamping circuit 1 comprises a voltage stabilizing module 12 and a high-voltage diode D1, the anode of the high-voltage diode D1 is connected with one end of the voltage stabilizing module 12, the cathode of the high-voltage diode D1 is connected with one end of the load module 2 and is used for being connected with the drain electrode of the tested gallium nitride device, the other end of the voltage stabilizing module 12 is connected with a power ground and is used for being connected with the source electrode of the tested gallium nitride device, the clamping circuit 1 further comprises a constant current module 11, and constant current output by the constant current module 11 flows to the tested gallium nitride device through the high-voltage diode D1. The voltage test node of the clamping circuit is the anode of a high-voltage diode, when the device is in an on state, the current flowing through the high-voltage diode D1 is provided by a constant current module, the current value is 1-100mA, and the load module is one of a resistive load and an inductive load. In this embodiment:
the voltage stabilizing module 12 is connected in parallel with a filtering module 13, the filtering module is a series loop of a capacitor C1 and a resistor R2, and the capacitance value and the resistance value are adjustable.
The load module 2 is a clamp inductive load and includes a power inductor L1 and a freewheeling diode D2.
The high-voltage diode D1 in the clamping circuit is a 600V silicon carbide Schottky diode, and the withstand voltage value of the high-voltage diode D1 is larger than the voltage value provided by a direct-current power supply.
The voltage stabilizing module 12 is formed by connecting a voltage stabilizing diode Z1 and a resistor R1 in series, the voltage stabilizing value of the voltage stabilizing diode is 3-10V, and the resistance value of the resistor R1 is 1-10k omega.
The constant current module adopts a constant current source IsourceConstant current value of 10mA, and is connected in series with a common diode D3 for preventing current from backflushingAnd protects the equipment.
The invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the dc power supply outputs a constant voltage, and when the device is turned on, the current flowing through the device is controlled by a load module, where the load may be one of a resistive load and an inductive load; the gate driving module provides a gate control signal of a device to be tested, so that the device can realize a switching process in a specific time, the gate driving module generally provides a single pulse signal when a load is a resistor, and the gate driving module generally provides a double pulse signal when the load is an inductor; under the device off state, the device under test bears high pressure, and the high-voltage diode in the clamp circuit keeps apart the device under test with constant current module, voltage stabilizing module, can convert the high pressure at device both ends into the low pressure when measuring, can also effectively protect other components and parts and instruments in the clamp circuit. The output current of the constant current module does not flow through the tested device in the off state, but flows through the voltage stabilizing module connected in parallel with the constant current module, when the voltage drop on the voltage stabilizing module rises to a certain value, the voltage stabilizing module in the clamping circuit stabilizes the voltage of the voltage detection point at a certain constant value within the range of 0-10V, so that the maximum value of the voltage value detected on the oscilloscope is the voltage constant value, and even if the voltage of the measurement point drops to the millivolt magnitude, the accuracy of the oscilloscope still can meet the accuracy required by the test; when the device is in an on state, the output current of the constant current module flows through the high-voltage diode and the device to be tested, the voltage value of the voltage detection point is the sum of the device conduction voltage drop and the high-voltage diode conduction voltage drop, the conduction voltage drop of the high-voltage diode can be easily obtained by testing the voltage-current characteristic curve of the high-voltage diode, and at the moment, the dynamic device to be tested conduction resistance value, namely the dynamic resistance, can be obtained only by subtracting the voltage drop of the high-voltage diode from the voltage value measured by the tested point. In the invention, in order to avoid the change of the conduction voltage drop of the high-voltage diode caused by the change of the current flowing through the high-voltage diode, the current flowing through the high-voltage diode is provided by the constant current module in the clamping circuit, so the value of the current flowing through the high-voltage diode is constant, the voltage drop at two ends of the high-voltage diode is also constant, and the calculated conduction voltage drop of the tested device is an accurate value. In addition, a filtering module is added in the clamping circuit to inhibit the oscillation generated instantaneously by the switching of the device.
As shown in fig. 2, the load is a clamping inductive load, and includes a power inductor L1 and a freewheeling diode D2, the device-under-test gate control signal is double-pulse, and the duty ratio and the period are adjustable. A high-voltage diode D1 in the clamping circuit is a 600V silicon carbide Schottky diode; the filtering module in the clamping circuit is a series loop of a capacitor C1 and a resistor R2, and the capacitance value and the resistance value are adjustable; the voltage stabilizing module is formed by connecting a voltage stabilizing diode Z1 and a resistor R1 in series, and the voltage stabilizing value is 5V; the constant current module is a constant current source IsourceThe constant current circuit is connected in series with a common diode D3, the constant current value is 10mA, and the diode can prevent current from backflushing so as to protect equipment.
As shown in fig. 4, the load is a clamping inductive load, and includes a power inductor L1 and a freewheeling diode D2, the device-under-test gate control signal is double-pulse, and the duty ratio and the period are adjustable. A high-voltage diode D1 in the clamping circuit is a 600V silicon carbide Schottky diode; the filtering module in the clamping circuit is a series loop of a capacitor C1 and a resistor R2, and the capacitance value and the resistance value are adjustable; the voltage stabilizing module is formed by connecting a voltage stabilizing diode Z1 and a resistor R1 in series, and the voltage stabilizing value is 5V; the constant current module is a constant voltage source VsourceThe constant current protection circuit is characterized by being connected with a common diode D3 and a constant current diode TD1 in series, wherein the constant current value is 1mA, and the common diode can prevent current from backflushing so as to protect equipment.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (7)
1. A circuit for testing the dynamic resistance of a gallium nitride device, comprising: a gate driving module (3) for driving a device to be tested, a clamping circuit (1) and a load module (2), the other end of the load module (2) is connected with a power supply DC, the clamping circuit (1) comprises a voltage stabilizing module (12) and a high-voltage diode D1, the anode of the high-voltage diode D1 is connected with one end of the voltage stabilizing module (12), the cathode of the high-voltage diode D1 is connected with one end of the load module (2) and is used for being connected with the drain electrode of the tested gallium nitride device, the other end of the voltage stabilizing module (12) is connected with a power ground and is used for being connected with the source electrode of the tested gallium nitride device, characterized in that the clamping circuit (1) also comprises a constant current module (11), the constant current output by the constant current module (11) flows to the gallium nitride device to be tested through the high-voltage diode D1, the high-voltage diode D1 is a silicon carbide Schottky diode, and a voltage test node is the anode of the high-voltage diode D1.
2. The GaN device dynamic resistance test circuit according to claim 1, wherein a filter module (13) is connected in parallel to the voltage regulator module (12).
3. The circuit of claim 2, wherein the filtering module is a series circuit of a capacitor C1 and a resistor R2, and the capacitance and resistance are adjustable.
4. The GaN device dynamic resistance testing circuit of claim 1, wherein the load module (2) is a clamp inductive load comprising a power inductor L1 and a freewheeling diode D2.
5. The circuit for testing the dynamic resistance of the gallium nitride device according to claim 1, wherein the high voltage diode D1 in the clamping circuit is a 600V silicon carbide schottky diode.
6. The GaN device dynamic resistance test circuit of claim 1, wherein the voltage regulator module (12) is composed of a Zener diode Z1 and a resistor R1 connected in series.
7. The circuit for testing the dynamic resistance of the gallium nitride device according to claim 1, wherein the constant current module employs a constant current source IsourceConstant current value of 10mA, and is connected in series with a common diode D3 for preventing current from returningAnd the equipment is flushed and protected.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811583665.4A CN111426928B (en) | 2018-12-24 | 2018-12-24 | Dynamic resistance test circuit for gallium nitride device |
| PCT/CN2019/126469 WO2020135197A1 (en) | 2018-12-24 | 2019-12-19 | Circuit for testing dynamic resistance of gallium nitride device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811583665.4A CN111426928B (en) | 2018-12-24 | 2018-12-24 | Dynamic resistance test circuit for gallium nitride device |
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| CN111426928A CN111426928A (en) | 2020-07-17 |
| CN111426928B true CN111426928B (en) | 2021-08-20 |
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| CN112394228B (en) * | 2020-11-17 | 2022-09-06 | 青岛聚能创芯微电子有限公司 | Gallium nitride power device on-resistance test circuit |
| US20230104095A1 (en) * | 2021-10-04 | 2023-04-06 | Nanya Technology Corporation | Testing device and method for testing devices under test |
| WO2023164900A1 (en) * | 2022-03-03 | 2023-09-07 | Innoscience (suzhou) Semiconductor Co., Ltd. | Apparatus and method for measuring dynamic on-resistance of nitride-based switching device |
| CN114740297B (en) * | 2022-04-12 | 2022-12-02 | 湖南炬神电子有限公司 | Power device testing method and system |
| CN115267466B (en) * | 2022-05-11 | 2023-04-28 | 西安电子科技大学 | Test system for characteristic research under dynamic working condition of gallium nitride power device |
| CN115728693B (en) * | 2022-11-11 | 2023-08-25 | 佛山市联动科技股份有限公司 | Power device testing device and calibration equipment and method thereof |
| CN116223916B (en) * | 2023-05-08 | 2023-08-04 | 佛山市联动科技股份有限公司 | Dynamic on-resistance testing device and method |
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| WO2020135197A1 (en) | 2020-07-02 |
| CN111426928A (en) | 2020-07-17 |
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