CN117518736A - 套刻误差量测的方法、装置、***及存储介质 - Google Patents
套刻误差量测的方法、装置、***及存储介质 Download PDFInfo
- Publication number
- CN117518736A CN117518736A CN202311597002.9A CN202311597002A CN117518736A CN 117518736 A CN117518736 A CN 117518736A CN 202311597002 A CN202311597002 A CN 202311597002A CN 117518736 A CN117518736 A CN 117518736A
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- overlay error
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- error measurement
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- 238000003860 storage Methods 0.000 title claims abstract description 8
- 238000000691 measurement method Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000005259 measurement Methods 0.000 claims abstract description 34
- 238000004590 computer program Methods 0.000 claims description 8
- 238000004364 calculation method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000011218 segmentation Effects 0.000 description 4
- 238000004422 calculation algorithm Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001292396 Cirrhitidae Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003709 image segmentation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202311597002.9A CN117518736A (zh) | 2023-11-27 | 2023-11-27 | 套刻误差量测的方法、装置、***及存储介质 |
Applications Claiming Priority (1)
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CN202311597002.9A CN117518736A (zh) | 2023-11-27 | 2023-11-27 | 套刻误差量测的方法、装置、***及存储介质 |
Publications (1)
Publication Number | Publication Date |
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CN117518736A true CN117518736A (zh) | 2024-02-06 |
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CN202311597002.9A Pending CN117518736A (zh) | 2023-11-27 | 2023-11-27 | 套刻误差量测的方法、装置、***及存储介质 |
Country Status (1)
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CN (1) | CN117518736A (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040058540A1 (en) * | 2002-09-20 | 2004-03-25 | Takahiro Matsumoto | Position detecting method and apparatus |
US20200081357A1 (en) * | 2018-09-07 | 2020-03-12 | Toshiba Memory Corporation | Position measuring method, position measuring apparatus, and semiconductor device manufacturing method |
CN115793412A (zh) * | 2022-12-15 | 2023-03-14 | 中国科学技术大学 | 一种非成像半导体套刻误差测量装置及方法 |
CN115963710A (zh) * | 2023-01-05 | 2023-04-14 | 长鑫存储技术有限公司 | 套刻误差修正方法及装置、电子设备和存储介质 |
CN116679535A (zh) * | 2023-08-04 | 2023-09-01 | 魅杰光电科技(上海)有限公司 | 套刻误差的量测方法、装置、***及存储介质 |
CN117008434A (zh) * | 2023-07-28 | 2023-11-07 | 华虹半导体(无锡)有限公司 | 套刻标记的设计方法 |
-
2023
- 2023-11-27 CN CN202311597002.9A patent/CN117518736A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040058540A1 (en) * | 2002-09-20 | 2004-03-25 | Takahiro Matsumoto | Position detecting method and apparatus |
US20200081357A1 (en) * | 2018-09-07 | 2020-03-12 | Toshiba Memory Corporation | Position measuring method, position measuring apparatus, and semiconductor device manufacturing method |
CN115793412A (zh) * | 2022-12-15 | 2023-03-14 | 中国科学技术大学 | 一种非成像半导体套刻误差测量装置及方法 |
CN115963710A (zh) * | 2023-01-05 | 2023-04-14 | 长鑫存储技术有限公司 | 套刻误差修正方法及装置、电子设备和存储介质 |
CN117008434A (zh) * | 2023-07-28 | 2023-11-07 | 华虹半导体(无锡)有限公司 | 套刻标记的设计方法 |
CN116679535A (zh) * | 2023-08-04 | 2023-09-01 | 魅杰光电科技(上海)有限公司 | 套刻误差的量测方法、装置、***及存储介质 |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Country or region after: China Address after: 201306 Building 1 and building 2, No. 333, Haiyang 1st Road, Lingang New District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Applicant after: Meijie photoelectric technology (Shanghai) Co.,Ltd. Address before: 200131 Building 1 and building 2, No. 333, Haiyang 1st Road, Lingang New Area, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Applicant before: Meijie photoelectric technology (Shanghai) Co.,Ltd. Country or region before: China |