CN117423591A

CN117423591A - Electron source, preparation method, chip detection equipment and chip photoetching equipment

Info

Publication number: CN117423591A
Application number: CN202210789710.1A
Authority: CN
Inventors: 黄志骏; 何正宇; 肖祥
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2022-07-06
Filing date: 2022-07-06
Publication date: 2024-01-19
Also published as: WO2024007738A1

Abstract

Electron source, preparation method, chip detection device and chip lithography device. The electron source includes: a substrate layer; an insulating dielectric layer disposed on the substrate layer; the transmitting electrode is arranged in the slot of the insulating medium layer and is electrically contacted with the substrate layer; an extraction electrode disposed on the insulating dielectric layer; and a first film layer covering the extraction electrode. The first film layer, the slot and the substrate layer are surrounded to form a microcavity. The aperture of the first film layer is larger than or equal to the particle size of electrons and smaller than the particle size of gas molecules, so that the quantity of ions formed by the impact of electrons emitted by the emission electrode and the gas molecules can be reduced when fewer gas molecules exist in the microcavity, the change of the morphology of the emission electrode caused by the ions is reduced, and the influence of the morphology change on the electron emission process can be reduced. The number of gas molecules adsorbed on the surface of the emission electrode is reduced, and the stability of the electron source is improved. In addition, the electron source has a simple structure, and all components constituting the electron source can be completed by adopting a chip-level manufacturing process, so that the electron source is suitable for quantitative production.

Description

Electron source, preparation method, chip detection equipment and chip photoetching equipment

Technical Field

The embodiment of the application relates to the field of field electron emission, in particular to an electron source, a preparation method, chip detection equipment and chip photoetching equipment.

Background

An Electron source (Electron source) is a device that generates, accelerates, and concentrates high energy electrons. The cathode of the electron source may generate a large number of electrons when energized. Under the action of the electric field, electrons are accelerated to move towards the anode of the electron source, so that electrons with higher kinetic energy are obtained. Electron sources are widely used in electron beam applications such as display devices, X-ray sources, electron microscopes (electron microscope), and electron beam lithography (electron beam lithography, EBL).

The electron source emits electrons using a cathode. In the process of emitting electrons by the cathode, electrons with higher kinetic energy emitted by the cathode collide with gas molecules in the environment, so that the gas molecules are ionized to form ions with higher kinetic energy. Ions with higher kinetic energy can collide with a cathode of an electron source in the motion process, so that the morphology of the cathode is changed, the field enhancement coefficient of the emission electrode is increased, and the difficulty of the emission electrode to emit electrons is increased. Further, gas molecules are adsorbed on the surface of the cathode, which affects the emission of cathode electrons, so that the stability of the electron source is reduced.

In order to improve the stability of the electron source, some prior art proposes a module type electron source, in which the electron source is installed in a cavity structure providing a vacuum environment, so as to reduce the probability of collision between electrons emitted by the electron source and gas molecules. Generally, the cavity is used for accommodating the electron source, so that the volume of the cavity is large, the cavity and the electron source cannot be manufactured by adopting a uniform manufacturing process, and a corresponding mechanical arm needs to be provided for installation. Therefore, the preparation process of the electron source in the form of a module set proposed in the prior art is complicated and is not suitable for mass production.

Disclosure of Invention

In order to solve the technical problems, embodiments of the present application provide an electron source, a preparation method, a chip detection device and a chip lithography device.

A first aspect of an embodiment of the present application provides an electron source, including: a substrate layer; the insulating medium layer is arranged on the substrate layer and is provided with a slot; a transmitting electrode disposed in the slot and in electrical contact with the substrate layer; the extraction electrode is arranged on the insulating medium layer and used for enabling the emission electrode to emit electrons; the first film layer covers the extraction electrode, and the first film layer, the grooves and the substrate layer form a microcavity; the aperture of the first membrane layer is larger than or equal to the electron particle size, the aperture of the first membrane layer is smaller than the particle size of the gas molecules, and the pressure in the microcavity is smaller than a preset value.

The electron source provided by the implementation manner comprises: a substrate layer; an insulating dielectric layer disposed on the substrate layer; the transmitting electrode is arranged in the slot of the insulating medium layer and is electrically contacted with the substrate layer; an extraction electrode disposed on the insulating dielectric layer; and a first film layer covering the extraction electrode. The first film layer, the slot and the substrate layer are surrounded to form a microcavity. The aperture of the first film layer is larger than or equal to the particle size of electrons and smaller than the particle size of gas molecules, so that the quantity of ions formed by the impact of electrons emitted by the emission electrode and the gas molecules can be reduced when fewer gas molecules exist in the microcavity, the change of the morphology of the emission electrode caused by the ions is reduced, and the influence of the morphology change on the electron emission process can be reduced. The number of gas molecules adsorbed on the surface of the emission electrode is reduced, and the stability of the electron source is improved. In addition, the electron source has a simple structure, and all components constituting the electron source can be completed by adopting a chip-level manufacturing process, so that the electron source is suitable for quantitative production.

With reference to the first implementation manner of the first aspect, the first film layer includes a conductive film layer.

In the implementation manner, in the electron emission process, the conductive film layer can utilize its own conductive property to guide out electrons on its surface, so that the influence of electrons accumulated on the conductive film layer on the electron emission process can be reduced. Further, the conductive film layer can play a role in optimizing electric field distribution between the extraction electrode and the emission electrode, and can reduce scattering angle of electrons, so that electrons emitted by the emission electrode have good collimation.

With reference to the second implementation manner of the first aspect, the first film layer further includes a supporting film layer stacked with the conductive film layer; the conductive film layer is stacked on a side adjacent to the extraction electrode and is in electrical contact with the extraction electrode, and the rigidity of the support film layer is greater than that of the conductive film layer.

In this implementation manner, the conductive film layer can use its own conductivity to conduct out electrons on its surface and electrons on the supporting film layer, so that the influence of electrons collected on the first film layer on the electron emission process can be reduced. Further, the conductive film layer can play a role in optimizing electric field distribution between the extraction electrode and the emission electrode, and can reduce scattering angle of electrons, so that electrons emitted by the emission electrode have good collimation. Further, since the rigidity of the supporting film layer is greater than that of the conductive film layer, compared with the conductive film layer, the stability of the first film layer provided by the implementation mode is better.

With reference to the third implementation manner of the first aspect, the first film layer includes two conductive film layers, and a support film layer stacked between the two conductive film layers, where the two conductive film layers are electrically connected; the stiffness of the support film layer is greater than the stiffness of the conductive film layer.

The first film layer provided by the implementation manner has a conductive film layer with a larger area, and correspondingly, the first film layer has the conductive film layer with the larger area for leading out electrons.

With reference to the fourth implementation manner of the first aspect, the conductive film layer adopts graphene.

With reference to the fifth implementation manner of the first aspect, the support film layer is one or two of BN and SiNx.

With reference to the sixth implementation manner of the first aspect, an area of the first film layer is smaller than or equal to an area of the extraction electrode, and an area of the first film layer is larger than an area of the opening of the slot close to the first film layer.

In the implementation mode, the area of the first film layer is smaller than or equal to that of the extraction electrode, so that the gas in the microcavity is discharged, and the preparation process of the electron source can be simplified.

With reference to the seventh implementation manner of the first aspect, the device further includes a second film layer, the second film layer covers the surface of the emitter electrode, the driving voltage of the emitter electrode covered with the second film layer, and/or the hardness of the second film layer is greater than that of the emitter electrode.

In this implementation mode, the second film layer covers on the surface of the transmitting electrode, and the hardness of the second film layer is greater than that of the transmitting electrode. Compared with an electron source without the second film layer, the hardness of the second film layer is higher in the implementation mode, correspondingly, the ion bombardment resistance of the second film layer is better, and the service life of the corresponding electron source is longer.

In this implementation manner, the second film layer covers the surface of the emission electrode, and electrons can be transferred to the second film layer through the emission electrode and emitted at the second film layer. Since the driving voltage of the emission electrode covered with the second film layer is smaller than that of the emission electrode, the electron source provided in this embodiment mode emits electrons easily as compared with an electron source not employing the second film layer.

With reference to the eighth implementation manner of the first aspect, the second film layer adopts AlN and LaB ₆ 、TiN、Y ₂ O ₃ One or more of diamond-like carbon.

With reference to the ninth implementation manner of the first aspect, the electron source includes at least one emitter electrode.

A second aspect of the embodiments of the present application provides a method for preparing an electron source provided by the embodiments of the present application, including; forming an insulating medium layer, a transmitting electrode and an extracting electrode on the substrate layer, wherein the insulating medium layer is positioned on the substrate layer, and the extracting electrode is positioned on the insulating medium layer; the insulating medium layer is provided with a slot, and the transmitting electrode is positioned in the slot and is electrically contacted with the substrate layer; and forming a first film layer covering the extraction electrode, wherein the first film layer, the grooves and the substrate layer form a microcavity.

With reference to the first implementation manner of the second aspect, the step of forming a first film layer on the extraction electrode includes: transferring the first film layer to an extraction electrode; the ambient pressure is reduced to a first pressure to expel the gas in the microcavity through the gap between the first film and the extraction electrode.

With reference to the second implementation manner of the second aspect, the method further includes: and increasing the ambient pressure to a second pressure to close a gap between the first film layer and the extraction electrode, wherein the second pressure is higher than the first pressure.

With reference to the third implementation manner of the second aspect, a ratio of the second pressure to the first pressure is greater than 10.

With reference to the fourth implementation manner of the second aspect, before the step of forming the first film layer on the extraction electrode, the method further includes:

and forming a second film layer on the surface of the emitting electrode, wherein the driving voltage of the emitting electrode covered with the second film layer is smaller than that of the emitting electrode, and/or the hardness of the second film layer is larger than that of the emitting electrode.

The technical effects of any one of the possible implementation manners of the second aspect may be referred to the technical effects of the different implementation manners of the first aspect, which are not described herein.

A third aspect of the embodiments provides a chip lithographic apparatus comprising an electron source as provided by the embodiments and a deflector for guiding electrons from the electron source onto a target object.

The technical effects of any one of the possible implementation manners of the third aspect may be referred to the technical effects of the different implementation manners of the first aspect, which are not described herein.

A fourth aspect of the present embodiment provides a chip detection apparatus, including an electron source provided in the embodiments of the present application, and a deflector for guiding electrons from the electron source onto a target object, and a detector for detecting outgoing electrons, the outgoing electrons including transmitted electrons after being incident on the target object, or scattered electrons, or secondary electrons.

The technical effects of any one of the possible implementation manners of the fourth aspect may be referred to the technical effects of the different implementation manners of the first aspect, which are not described herein.

A fifth aspect of the embodiments of the present application also provides a computer program product comprising one or more instructions executable by a processor to perform the control method provided in the second aspect.

The technical effects of any one of the possible implementation manners of the fifth aspect may be referred to the technical effects of the different implementation manners of the second aspect, which are not described herein.

The sixth aspect of the embodiments also provides a chip system, which includes a processor and a memory; a memory for storing processor-executable instructions; wherein the processor is configured to perform the control method provided in the second aspect.

The technical effects of any one of the possible implementation manners of the sixth aspect may be referred to the technical effects of the different implementation manners of the second aspect, which are not described herein.

Drawings

Fig. 1 shows a schematic construction of an electron beam application apparatus;

FIG. 2 is a schematic diagram of an electron source module;

FIG. 3 is a schematic diagram of an electron source module;

FIG. 4 is a cross-sectional view of an electron source provided in one possible embodiment;

FIG. 5 is a schematic illustration of a first film layer provided in one possible embodiment;

FIG. 6 is a top view of a first film layer provided in one possible embodiment;

FIG. 7 is a schematic diagram of an electron source according to one possible embodiment;

FIG. 8 is a schematic diagram of an electron source according to one possible embodiment;

FIG. 9 is a schematic diagram of an electron source according to one possible embodiment;

FIG. 10 is a flow chart of a method of preparation provided in one possible embodiment;

FIG. 11A is a detailed flowchart of S101 in FIG. 10;

FIG. 11B is a process flow diagram corresponding to FIG. 11A;

FIG. 12A is a detailed flowchart of S101 in FIG. 10;

FIG. 12B is a process flow diagram corresponding to FIG. 12A;

fig. 13 is a process flow diagram of a first film and extraction electrode sealing process according to one possible embodiment.

Detailed Description

The following description of the technical solutions in the embodiments of the present application will be made with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments.

Hereinafter, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature.

Furthermore, in this application, the terms "upper," "lower," "left," "right," "horizontal," and "vertical" are defined with respect to the orientation in which the device is schematically depicted in the drawings, and it should be understood that these directional terms are relative terms, which are used for descriptive and clarity with respect thereto, and which may be varied accordingly with respect to the orientation in which the device is depicted in the drawings.

In the present application, unless explicitly specified and limited otherwise, the term "coupled" is to be construed broadly, and for example, "coupled" may be either fixedly coupled, detachably coupled, or integrally formed; can be directly connected or indirectly connected through an intermediate medium.

Referring to fig. 1, an electron beam application apparatus may include an electron source 11 and a deflector 12 for guiding electrons from the electron source 11 to a target object, and the electron source 11 and the deflector 12 may be placed in a vacuum chamber 10.

The working process of the electron beam application device is as follows: the controller 15 controls the electron source 11 to emit electrons; the electrons are deflected by the deflector 12 and are incident on a target object 14 placed on the stage 13.

The electron source in the embodiments of the present application is a device that generates, accelerates, and converges high-energy electrons. The electron source comprises at least a cathode 21 for emitting electrons. The electron source is energized to collect a large number of electrons on the surface of cathode 21. Electrons escape from the surface of the cathode under the action of an electric field, so that free electrons are obtained, and the free electrons can obtain higher kinetic energy under the action of the accelerating electrode. The electron beam application device may use these electrons with higher kinetic energy to perform some functions.

Illustrating:

when the electron beam application device is a display part, the target object may be phosphor of an inner screen surface of the display part. The working process of the display component is as follows: the controller 15 controls the electron source 11 to emit electrons, the electrons are deflected by the deflector 12, and the electrons are incident to fluorescent powder on the inner surface of the screen to excite the fluorescent powder to emit light, so that the screen displays images.

When the electron beam application device is an X-ray source, the target object may be a metal target. The working process of the X-ray source is as follows: the controller 15 controls the electron source 11 to emit electrons, which are deflected by the deflector 12 to strike the metal target. During the impact process, the electrons suddenly decelerate, and the lost kinetic energy is released in the form of photons, forming X-rays.

When the electron beam application apparatus is a chip lithography apparatus, the target object may be a chip. The working process of the chip photoetching equipment is as follows: the controller 15 controls the electron source 11 to emit electrons, which are applied to the chip coated with the electron resist by the deflector 12, to form a pattern on the chip.

When the electron beam application device is a chip inspection device, the target object may be a sample to be inspected. The electron beam application device further comprises a detector. The working process of the chip detection equipment is as follows: the controller 15 controls the electron source 11 to emit electrons, and the electrons are emitted when the electrons are incident on the sample through the deflector 12 and reach the surface of the sample. The outgoing electrons may include transmitted electrons, or scattered electrons, or secondary electrons after incidence on the target object. The detector can detect the emergent electrons to finish the detection of the sample.

The electron source emits electrons using a cathode. In the process of emitting electrons by the cathode, electrons with higher kinetic energy emitted by the cathode collide with gas molecules in the environment, so that the gas molecules are ionized to form ions with higher kinetic energy. Ions with higher kinetic energy can collide with a cathode of an electron source in the motion process, so that the shape of the cathode is changed, the field enhancement system of the emission electrode is changed, the emission electrode is affected to emit electrons, and the stability of the electron source is reduced. Further, gas molecules are adsorbed on the surface of the cathode, which affects the emission of cathode electrons, so that the stability of the electron source is reduced.

In order to solve the above technical problems, the prior art provides an electron source, and in particular, refer to fig. 2. The electron source may include an electron source module 21 disposed on a bottom plate 23, and the electron source module 21 is disposed in a cavity structure formed by the housing 22 and the bottom plate 23, and electrons emitted from the electron source module 21 may be emitted toward the sample. Wherein, electron source module 21 includes: an anode 211, a needle tip cathode 212, an insulating support column 213, and an insulating film layer 214. The electronic source module 21 is powered by a power source 24, for example, the negative electrode of the power source 24 is electrically connected with the needle tip cathode 212 through a wire passing through the bottom plate 23; the anode of the power supply 24 is electrically connected to the anode 211 by a wire passing through the bottom plate 23. The anode 211 and the needle tip cathode 212 are arranged on the bottom plate 23, and the anode 211 is surrounded on the periphery of the needle tip cathode 212 and is insulated from the needle tip cathode 212; in addition, the end of the anode 211 far away from the bottom plate 23 exceeds the top end of the needle tip cathode 212, so that an electric field is formed between the anode 211 and the needle tip cathode 212 towards the sample, and electrons of the cathode of the power supply 24 are ejected after overflowing from the needle tip cathode 212 and being accelerated by the electric field. In addition, as shown in fig. 2, an insulating support column 213 is further provided around the inside of the anode 211, and the tip cathode 212, the insulating support column 213, and the insulating film layer 214 form a cavity structure through which electrons pass when the sub-tip cathode 212 is emitted. When the anode 211 is biased positively with respect to the needle tip cathode 212, the needle tip cathode 212 will emit electrons. The material of the insulating film layer 214 may be SiNx, BN, etc., the thickness of the insulating film layer 214 is 1 nm-50 nm, and the insulating film layer 214 has the characteristics of being penetrable by electrons and penetrable by gas molecules.

In the electron source module provided in fig. 2, the emission end of the needle tip cathode 212 is located in the cavity structure, and because the pressure in the cavity structure is smaller, the insulating film 214 can play a role of blocking the gas in the housing 22 from entering the cavity structure, so that gas molecules in the cavity structure are fewer. Because there are fewer gas molecules in the cavity structure, the probability of electrons emitted by the needle tip cathode 212 striking the gas molecules is lower, and accordingly, the number of ions formed by the electrons striking the gas molecules is smaller, the loss of ions to the needle tip cathode 212 is lower, and the lifetime of the needle tip cathode 212 is longer. Further, the number of ions formed by electrons striking gas molecules is small, the morphology change of the needle-tip cathode 212 due to the collision of ions is small, the field enhancement coefficient change due to the morphology change is small, and the stability of the electron source is high. Further, the cavity structure has fewer gas molecules, the number of gas molecules adsorbed on the surface of the needle tip cathode 212 is lower, and the stability of the electron source is better.

The electron source module provided in fig. 2 has two problems. (1) the electron source provided in fig. 2 employs an insulating film layer 214. The insulating film 214 has poor conductivity, electrons are easily accumulated on the surface of the insulating film 214, and electrons accumulated on the surface of the insulating film 214 can suppress electron emission from the tip cathode 212. (2) The structure of the electron source is complex, and particularly, the components in the electron source module 21 are usually large in size, and particularly, the arrangement modes of the anode 211, the needle point cathode 212 and the insulating support column 213 determine that the electron source is not beneficial to manufacturing by a chip-scale manufacturing process; in addition, the large-volume cavity structure (the cavity structure formed by the enclosure of the shell 22 and the bottom plate 23) cannot be manufactured by a chip-level manufacturing process; and it is generally necessary to mount the electron source module 21 to the cavity structure by means of a robot arm or to assemble the electron source module 21 with the cavity structure. Therefore, the electron source provided in fig. 2 has a complex structure and a complex preparation process, and is not suitable for quantitative production.

In order to prevent electrons from collecting on the film, some electron sources use conductive film layers to form a cavity structure. See fig. 3 for details. The electron source provided in fig. 3 includes: the electron source module 31, the bottom plate 32, the support columns 33 and the conductive film layer 34. Wherein the bottom plate 32, the support posts 33 and the conductive film layer 34 form a cavity structure. The electron source module 31 is disposed within the cavity structure. In the technical solution provided in fig. 3, the conductive film layer 34 is graphene. Graphene has the characteristics of penetrability of electrons and penetrability of gas molecules. Meanwhile, the graphene has conductivity, electrons which do not penetrate through the conductive film layer 34 can be led out through the conductive film layer 34, so that the number of electrons accumulated on the conductive film layer 34 can be reduced, and the inhibition effect of the electrons accumulated on the conductive film layer 34 on the electron emission of the electron source module 31 can be reduced.

In the preparation process of the electron source provided in fig. 3, the electron source module 31 may be packaged by using a chip-level manufacturing process, but the large-volume cavity structure cannot be packaged by using the chip-level manufacturing process due to the complex structure; and it is generally necessary to mount the bottom plate 32, the support columns 33 and the conductive film layer 34 in a cavity structure by means of a robot arm, or to assemble the electron source module 31 with the cavity structure. The electron source module provided in fig. 3 is complicated in manufacturing process and is not suitable for mass production.

In order to solve the above technical problems, an embodiment of the present application provides an electron source. Referring to fig. 4, the electron source may include: a substrate layer 41; an emitter electrode 42 in electrical contact with the substrate layer 41; an insulating dielectric layer 44 provided on the substrate layer 41, the insulating dielectric layer 44 being provided with a groove 44A; an extraction electrode 43 provided on the insulating dielectric layer 44; a first film layer 45 covering the extraction electrode 43. Wherein the first film layer, the grooves 44A and the substrate layer 41 form a microcavity for accommodating the emitter electrode 42. The pore size of the first film layer 45 is greater than or equal to the electron particle size, and the pore size of the first film layer 45 is less than or equal to the particle size of the gas molecules.

The electron source provided in the embodiment of the present application, the insulating dielectric layer 44 is provided with a slot 44A. The grooves 44A form a microcavity with the first film layer 45 and the substrate layer 41 for accommodating the emitter electrode 42, and the pressure of the microcavity is smaller than a set value. Since the aperture of the first film 45 is larger than the particle size of electrons, the first film 45 may allow electrons emitted from the emitter electrode 42 to exit the microcavity; since the pore diameter of the first film layer 45 is smaller than the particle diameter of the gas molecules, the first film layer 45 can block the gas molecules in the environment from entering the microcavity, so that fewer gas molecules can be ensured in the microcavity. Because fewer gas molecules are in the microcavity, the probability of the electrons emitted by the emitter electrode 42 striking the gas molecules is lower, and accordingly, the number of ions formed by the electrons striking the gas molecules is smaller, the loss to the emitter electrode 42 in the ion movement process is lower, the lifetime of the emitter electrode 42 is longer, and accordingly, the lifetime of the electron source is longer.

Further, the number of ions formed by the electrons striking the gas molecules is small, the shape change of the emitter electrode 42 due to the collision of the ions is small, the field enhancement coefficient change due to the shape change is small, and the stability of the electron source is good.

Further, the microcavity has fewer gas molecules, the number of gas molecules adsorbed on the surface of the emitter electrode 42 is lower, and the stability of the electron source is better. The electron source provided in this embodiment of the present application has a simple structure, and the insulating dielectric layer 44 may be formed on the substrate layer 41 by using a chip-level manufacturing process such as coating, vapor deposition, etc., the extraction electrode 43 is formed on the insulating dielectric layer 44, and the first film layer 45 is formed on the extraction electrode. Therefore, the electron source provided by the embodiment of the application can be packaged by adopting the chip-level manufacturing process, and the electron source provided by the embodiment of the application is more beneficial to quantitative production.

The following describes in detail the devices involved in the electron source:

in the present embodiment, the emitter electrode 42 is a member for emitting electrons. The extraction electrode 43 is a member that causes the emission electrode 42 to emit electrons in the embodiment of the present application. In general, the emitter electrode 42 is connected to a negative electrode of a power source, the extraction electrode 43 is connected to a positive electrode of the power source, and electrons outputted from the power source can flow to the emitter electrode 42. Under the action of the power supply, a voltage difference exists between the extraction electrode 43 and the emission electrode 42, and accordingly, an electric field exists between the extraction electrode 43 and the emission electrode 42, and electrons flowing to the emission electrode 42 can be emitted at the emission electrode 42 under the action of the electric field.

As a possible implementation, the emitter electrode 42 is connected to the negative electrode of the power supply through the substrate layer 41, in which case the substrate layer 41 is required to have conductive properties.

As a possible implementation, the substrate layer 41 having conductive properties may be made of a semiconductor material. The semiconductor material may be P-type doped silicon (Si). In some possible implementations, P-type doped silicon (Si) may be pure silicon (Si) doped with trace amounts of group iii boron (B), indium (In), or aluminum (Al). The semiconductor material may also be an N-type semiconductor material, which may be, but is not limited to, N-type doped silicon (Si). The N-type doped silicon (Si) may be pure silicon (Si) doped with a trace amount of phosphorus (P), arsenic (As), antimony (Sb), or the like of group v.

As a possible implementation, the substrate layer 41 having conductive properties may be made of a metal material. Wherein, the metal material can be one or a combination of several of nickel (Ni), molybdenum (Mo), tungsten (W), titanium (Ti) and chromium (Cr).

As a possible implementation, the substrate layer 41 having conductive properties may be made of a metal compound material. Wherein the metal compound material may be, but is not limited to, lanthanum hexaboride (LaB ₆ )。

As a possible implementation, the substrate layer 41 having conductive properties may be made of a non-metallic material. Wherein the nonmetallic compound material may be, but is not limited to, silicon (Si).

The thickness of the substrate layer 41 is not particularly limited in the embodiment of the present application, and the thickness of the substrate layer 41 may be micro-scale or nano-scale. As a possible implementation, the substrate layer 41 may be between 500 μm and 675 μm.

The material of the emitter electrode 42 is not particularly limited in the embodiment of the present application.

As one possible implementation, the emitter electrode 42 may be made of a semiconductor material. The semiconductor material may be, but is not limited to, P-type doped silicon (Si), N-type semiconductor material, and the like.

As a possible implementation, the emitter electrode 42 may be made of a metal material. Wherein, the metal material can be one or a combination of several of nickel (Ni), molybdenum (Mo), tungsten (W), titanium (Ti) and chromium (Cr).

As one possible implementation, the emitter electrode 42 may be a metal compound material, wherein the metal compound material may be, but is not limited to, lanthanum hexaboride (LaB ₆ ) Zinc oxide (ZnO).

As one possible implementation, emitter electrode 42 may be a non-metallic material, where the non-metallic material may be, but is not limited to, carbon (C).

In embodiments where emitter electrode 42 and substrate layer 41 are the same material, emitter electrode 42 and substrate layer 41 may be integrally formed.

The shape of the emitter electrode 42 is not particularly limited in the embodiment of the present application. For example, in some possible implementations, the emitter electrode 42 may be frustoconical in shape, or a nanowire, or a nanotube, or a nanoplatelet.

In order to reduce the difficulty of electron emission of the electron source, as one possible implementation, the emitter electrode 42 may be in the shape of a needle tip. In general, the emitter electrode 42 may emit electrons when the electric field strength around the emitter electrode 42 is greater than the electric field threshold. The electric field threshold satisfies the following relationship: e=θ×u/d, where E is an electric field threshold, U is a voltage between the emitter electrode 42 and the extraction electrode 43, d is a distance between the emitter electrode 42 and the extraction electrode 43, and θ is a field strength enhancement coefficient. Since d is a constant value and the needle-shaped emitter electrode 42 has a large θ, a small voltage is applied between the emitter electrode 42 and the extraction electrode 43 to reach the electric field threshold. Therefore, in the present embodiment, the electron source easily emits electrons.

The height of the emitter electrode 42 in the stacking direction is not particularly limited in the embodiment of the present application. For example, in some possible implementations, the emitter electrode 42 may have a height in the stacking direction of 0.5nm to 2 μm.

As a possible implementation, the material of the extraction electrode 43 may be a conductor material. Wherein the conductor material may be, but is not limited to, a metal material, polysilicon, and the metal material may be, but is not limited to, tungsten (W).

The thickness of the extraction electrode 43 is not particularly limited, and the thickness of the extraction electrode 43 may be 100nm to 500nm as a feasible implementation manner.

The embodiment of the present application does not specifically limit the surface roughness of the extraction electrode 43, and as a feasible implementation, the surface roughness may be 0.1nm to 2nm.

In embodiments where the positive electrode of the power supply is connected to extraction electrode 42 and the negative electrode of the power supply is connected to emitter electrode 42 through substrate layer 41, an insulating dielectric layer 44 needs to be stacked between extraction electrode 42 and substrate layer 41 to achieve electrical isolation of substrate layer 41 and extraction electrode 43. Specifically, reference may be continued to FIG. 4.

In the present embodiment, the insulating dielectric layer 44 is provided with a slot 44A for accommodating the emitter electrode 42. One end of emitter electrode 42 is in electrical contact with substrate layer 41 through slot 44A. As one possible implementation, one end of emitter electrode 42 that extends through slot 44A may be in contact with insulating dielectric layer 44. As a possible implementation, one end of emitter electrode 42 that extends through slot 44A may not be in contact with insulating dielectric layer 44.

The material for preparing the insulating dielectric layer 44 is not specifically limited in this embodiment, and any material that is not good at conducting current can be used as the material for preparing the insulating dielectric layer 44 in this embodiment. For example, in some possible implementations, the insulating dielectric layer 44 may be silicon dioxide (SiO ₂ )。

The thickness of the insulating dielectric layer 44 in the stacking direction is not particularly limited in the embodiment of the present application. For example, in some possible implementations, the thickness of the insulating dielectric layer 44 may be between 2 μm and 5 μm.

As a possible implementation manner, the position of the extraction electrode 43 corresponding to the slot 44A is hollowed out to expose the emitter electrode 42, so that the emitter electrode 42 can emit electrons. The hollowed-out portion of the extraction electrode 43 in this embodiment is referred to as a first hollowed-out portion for convenience of distinction.

As a feasible implementation mode, the aperture of the first hollowed-out part is 0.5-2 mu m.

As a possible implementation, the aperture of the first hollowed-out portion may be smaller than the aperture of the slot 44A.

In this embodiment, the first film layer 45 covers the extraction electrode 43, and is used to form a microcavity with the slot 44A and the substrate layer 41 for accommodating the emitter electrode 42. The pore diameter of the first film layer 45 is greater than or equal to the electron particle diameter, and the pore diameter of the first film layer 45 is less than or equal to the particle diameter of the gas molecules.

In the embodiment of the application, the pressure of the microcavity is smaller than a set value. The embodiment of the present application does not specifically limit the set value, for example, the set value may be 1e in some feasible implementations ^-7 Pa. Because the pressure of the microcavity is smaller than the set value, fewer gas molecules are arranged in the microcavity, so that the probability of collision between electrons emitted by the emission electrode 42 and the gas molecules is lower, the corresponding number of ions formed by the electrons striking the gas molecules is smaller, the loss of the emission electrode 42 in the ion movement process is lower, the service life of the emission electrode 42 is longer, and the service life of the electron source is correspondingly longer. Further, the number of ions formed by the electrons striking the gas molecules is small, the shape change of the emitter electrode 42 due to the collision of the ions is small, the field enhancement coefficient change due to the shape change is small, and the stability of the electron source is good. Further, the microcavity has fewer gas molecules, the number of gas molecules adsorbed on the surface of the emitter electrode 42 is lower, and the stability of the electron source is better.

The material for preparing the first film layer 45 is not specifically limited, and any material having a pore size greater than or equal to the electron particle size and less than or equal to the gas molecular size can be used in the embodiments of the present application.

In the working process of the electron source provided in this embodiment, electrons emitted by the emission electrode 42 are emitted in a direction away from the substrate layer 41 under the action of the electric field. Since the aperture of the first film layer 45 is larger than the particle diameter of electrons, electrons can penetrate the first film layer 45. For the purpose of blocking the gas molecules outside the microcavity, the pore size of the first film layer 45 needs to be smaller than the particle size of the gas molecules. The pore size of the first film 45 is smaller than the pore size of the gas molecules, which limits the rate at which electrons penetrate the first film 45 to some extent. If the rate at which electrons are emitted by the emitter electrode 42 is greater than the rate at which electrons penetrate the first film layer 45, the electrons will accumulate on the first film layer 45, and the electrons accumulated on the first film layer 45 will generate an additional electric field that will inhibit the emission of electrons by the emitter electrode 42.

In order to reduce the influence of electrons accumulated on the first film 45 on the electron emission process of the emitter electrode 42, the first film 45 may include a conductive film 45A as one possible implementation. The conductive film layer 45A may be graphene.

The number of layers of graphene is not specifically limited in the embodiment of the present application. For example, in a feasible embodiment, the number of layers of graphene may be 1-10.

In the present embodiment, the first film layer 45 includes a conductive film layer 45A, and the conductive film layer 45A is in electrical contact with the extraction electrode 43. During electron emission, if the rate at which electrons are emitted from the emitter electrode 42 is greater than the rate at which electrons penetrate the conductive film layer 45A, the electrons are accumulated on the conductive film layer 45A. Electrons accumulated on the surface of the conductive film 45A can be guided out through the conductive film 45A, and therefore, the present implementation can reduce the influence of the electrons accumulated on the conductive film 45A on the electron emission process.

Further, the conductive film layer 45A can optimize the electric field distribution between the extraction electrode 43 and the emission electrode 42, and reduce the scattering angle of electrons, so that the electrons emitted by the emission electrode 42 have better collimation.

Specifically, in the embodiment where the conductive film 45A is not used or the first film 45 is an insulating film, the extraction electrode 43 is located around the emitter electrode 42, the electric field between the extraction electrode 43 and the emitter electrode 42 is divergent, and under the action of the electric field, the scattering angle of electrons is large. In this implementation, the extraction electrode 43 is covered with the conductive film layer 45A, and the electric field between the conductive film layer 45A and the emission electrode 42 determines the movement direction of electrons.

In order to enhance the stability of the first film layer 45, in the embodiment in which the first film layer 45 includes the conductive film layer 45A, the first film layer 45 further includes a supporting film layer.

In the embodiment of the present application, the rigidity of the supporting film layer is greater than the rigidity of the conductive film layer 45A. As a feasible implementation, the support film layer may be one or two of BN and SiNx.

With continued reference to fig. 4, the conductive film 45A and the supporting film 45B are stacked, and the conductive film 45A is stacked on a side adjacent to the extraction electrode 43 and is in electrical contact with the extraction electrode 43, so that electrons accumulated on the surface of the conductive film 45A can be guided out through the extraction electrode 43, and further the inhibition effect of the electrons accumulated on the first film 45 on the electron emission of the emission electrode 42 can be reduced.

Further, the conductive film layer 45A can play a role in optimizing the electric field distribution of the emission electrode 42, so that the electric field formed by the emission electrode 42 is uniformly distributed in the emission direction of electrons, and further, the scattering angle of electrons can be reduced, so that the electrons emitted by the emission electrode 42 have better collimation.

Further, since the first film 45 further includes the supporting film 45B, the stiffness of the supporting film is greater than that of the conductive film 45A, and compared with the conductive film 45A, the stability of the first film 45 provided in this implementation manner is better.

Referring to fig. 5, as a feasible implementation manner, the first film layer 45 includes two conductive film layers (45 A1 and 45 A2) and a support film layer 45B stacked between the two conductive film layers; wherein the conductive film layer 45A1 is in electrical contact with the conductive film layer 45 A2.

In this implementation, the first film 45 includes a supporting film 45B, so the stability of the first film 45 is better. Compared with the first film 45 in fig. 4, the first film 45 provided by the present implementation manner has larger-area conductive films (45 A1 and 45 A2), and accordingly, the first film 45 has larger-area conductive films (45 A1 and 45 A2) for electron extraction, and the number of electrons accumulated on the conductive films (45 A1 and 45 A2) can be reduced by adopting the first film 45 provided by the present implementation manner, so that the suppression effect of electrons accumulated on the conductive films (45 A1 and 45 A2) on electron emission of an electron source can be reduced.

The area of the first film layer 45 is not specifically limited, and as a feasible implementation manner, the area of the first film layer 45 may be equal to the area of the extraction electrode 43.

In the process of preparing the electron source, it is necessary to exhaust the gas in the microcavity, and the larger the contact area between the first film layer 45 and the extraction electrode 43 is, the greater the difficulty in exhausting the gas in the microcavity is.

To reduce the difficulty of preparing the electron source, as one possible implementation, the area of the first film layer 45 is smaller than or equal to the area of the extraction electrode 43.

In particular, referring to fig. 6, the first film 45 may be provided with a hollow 45-1 to reduce the contact area between the first film 45 and the extraction electrode 43. For convenience of distinguishing the embodiments of the present application, the hollow-out of the first film layer 45 may be referred to as a second hollow-out.

In order to reduce the difficulty of electron emission of the electron source, as a possible implementation manner, the electron source further includes a second film layer (not shown in the drawing), and the second film layer covers the surface of the emitter electrode 42. The driving voltage of the emitting electrode covered with the second film layer is smaller than the driving voltage of the emitting electrode. In the present embodiment, the driving voltage is the smallest electrode that needs to be applied between the emitter electrode 42 and the extraction electrode for the emitter electrode to emit electrons. When a driving voltage is applied between the emitter electrode 42 and the extraction electrode, the electric field strength around the emitter electrode 42 is equal to the electric field threshold.

In this embodiment, the second film layer covers the surface of the emitter electrode 42, and the driving voltage of the emitter electrode 42 covered with the second film layer is smaller than the driving voltage of the emitter electrode 42, so that compared with an electron source without the second film layer, the electron source provided in this embodiment easily emits electrons.

To enhance the lifetime of the emitter electrode 42, as one possible implementation, the hardness of the second film layer is greater than the hardness of the emitter electrode 42. In this implementation manner, the second film layer covers the surface of the emitter electrode 42, and the hardness of the second film layer is greater than that of the emitter electrode 42. Compared with an electron source without the second film layer, the hardness of the second film layer is higher in the implementation mode, correspondingly, the ion bombardment resistance of the second film layer is better, and the service life of the corresponding electron source is longer.

As a feasible implementation, the second film layer adopts lanthanum nitride (AlN) hexaboride (LaB) ₆ ) Titanium nitride (TiN), yttrium oxide (Y) ₂ O ₃ ) One or more of the diamond-like carbon is mixed.

As a possible implementation, the electron source may comprise at least one emitter electrode. In the embodiment of the present application, an electron source including N (N is equal to or greater than 2) emission electrodes may be referred to as an electron source array. Wherein the N emitter electrodes may be referred to as an emitter electrode array. Please refer to fig. 7, 8 and 9. Wherein (two) in fig. 7 is a cross-sectional view of (one) in fig. 7 on the AA' plane; FIG. 8 (two) is a cross-sectional view of FIG. 8 (one) in the plane AA'; fig. 9 (two) is a cross-sectional view of fig. 9 (one) in the AA' plane. The electron source array may include: a substrate layer 41; an insulating dielectric layer 44 disposed on the substrate layer 41, the insulating dielectric layer 44 being provided with N slots 44A; an extraction electrode 43 provided on the insulating dielectric layer 44; the first membrane layer array 45-2, the first membrane layer array 45-2 includes N first membrane layers 45, the first membrane layers 45 cover the extraction electrode 43, the aperture of the first membrane layers 45 is greater than or equal to the electron particle size, and the aperture of the first membrane layers 45 is less than or equal to the particle size of the gas molecules; each first film 45 forms a microcavity with one of the grooves 44A and the substrate 41; a emitter electrode array 42A, the emitter electrode array 42A including N emitter electrodes 42, each emitter electrode 42 disposed within one microcavity, the emitter electrodes 42 being in electrical contact with the substrate layer 41.

Referring to fig. 8, as a possible implementation manner, N first film layers 45 may be integrally formed.

In the process of preparing the electron source, it is necessary to exhaust the gas in the microcavity, and the larger the contact area between the first film layer 45 and the extraction electrode 43 is, the greater the difficulty in exhausting the gas in the microcavity is. In order to reduce the difficulty in preparing the electron source, as a feasible implementation manner, referring to fig. 9, the second hollow 45-1 is distributed in the integrally formed first film layer 45. The second hollowed-out parts 45-1 are distributed on the first film layer 45, so that the contact area between the first film layer 45 and the extraction electrode 43 can be reduced, the difficulty of exhausting gas in the microcavity is correspondingly reduced, and the preparation process of the electron source is simplified.

As one possible implementation, the first film layer 45 includes a conductive film layer 45A.

As one possible implementation, the first film layer 45 further includes a support film layer 45B disposed in stacked relation with the conductive film layer 45A.

The conductive film layer 45A is disposed adjacent to one side of the extraction electrode 43 and is in electrical contact with the extraction electrode 43, and the rigidity of the support film layer is greater than that of the conductive film layer 45A.

As one possible implementation, the first film layer 45 includes two conductive film layers (45 A1 and 45 A2) and a support film layer 45B stacked in the middle of the two conductive film layers; wherein the conductive film layer 45A1 is in electrical contact with the conductive film layer 45 A2.

As a feasible implementation manner, the electron source further includes a second film layer, the second film layer covers the surface of the emitter electrode 42, the driving voltage of the emitter electrode 42 covered with the second film layer is smaller than the driving voltage of the emitter electrode 42, and/or the hardness of the second film layer is greater than the hardness of the emitter electrode 42.

In this embodiment of the present application, the effect achieved by different implementation manners of the electron source array may refer to the technical effect brought by the different implementation manners of the electron source, which is not described herein again.

The embodiment of the present application further provides a preparation method, for preparing an electron source provided in real time in the present application, or an electron source array provided in the embodiment of the present application, referring to fig. 10, the preparation method may include S101 to S102:

s101, forming an insulating dielectric layer, a transmitting electrode and an extracting electrode on a substrate layer.

In the embodiment of the present application, the insulating dielectric layer 44 may be formed on the substrate layer 41 by using a chip-level manufacturing process such as coating, vapor deposition, etc., and the extraction electrode 43 may be formed on the insulating dielectric layer 44.

In the embodiment of the present application, the insulating dielectric layer 44 is located on the substrate layer 41, and the extraction electrode 43 is located on the insulating dielectric layer 44. Insulating dielectric layer 44 is provided with a slot 44A and emitter electrode 42 is positioned within slot 44A in electrical contact with substrate layer 41.

Referring to fig. 11A, as a feasible implementation manner, step S101 may include S111 to S114:

s111, forming an insulating medium layer on the substrate layer in a vapor deposition mode.

Among other things, vapor deposition may be, but is not limited to, physical vapor deposition (physical vapor deposition, PVD), or chemical vapor deposition (chemical vapor deposition, CVD).

Referring to fig. 11B (one), it can be seen that insulating dielectric layer 44 is stacked on substrate layer 41. S112, forming an extraction electrode on the insulating medium layer by adopting a vapor deposition method. Referring to fig. 11B (two), it can be seen that the extraction electrode 43 is stacked on the insulating dielectric layer 44.

S113 forms a slot in the insulating dielectric layer.

In this embodiment, the trench 44A may be formed in the insulating dielectric layer 44 by an etching method, which may be, but not limited to, dry etching or wet etching. The dry etch may be, but is not limited to, a plasma etch and the wet etch may be, but is not limited to, a solvent etch.

Referring to fig. 11B (iii), it can be seen that the insulating medium is provided with slots 44A.

S114, forming a transmitting electrode in the slot in an evaporation mode, wherein the transmitting electrode is in electrical contact with the substrate layer.

Referring to fig. 11B (four), it can be seen that emitter electrode 42 is located within slot 44A, and one end of emitter electrode 42 extends through slot 44A to make electrical contact with substrate layer 41.

Referring to fig. 12A, step S101 may include S121 to S124 as a possible implementation manner.

S121 forms a emitter electrode on the substrate layer by etching or epitaxial growth.

The implementation manner of forming the emitter electrode 42 on the substrate 41 may refer to the above embodiment, and will not be described herein.

Referring to fig. 12B (one), it can be seen that emitter electrode 42 is located on substrate layer 41.

S122, forming an insulating medium layer on the substrate layer in a vapor deposition mode.

The implementation manner of forming the insulating dielectric layer 44 on the substrate layer 41 may refer to the above embodiment, and will not be described herein again.

Referring to fig. 12B (two), it can be seen that insulating dielectric layer 44 is stacked on substrate layer 41.

S123, forming an extraction electrode on the insulating medium layer by adopting a vapor deposition method.

The implementation manner of forming the extraction electrode 43 on the insulating medium layer 44 may refer to the above embodiment, and will not be described herein again.

Referring to fig. 12B (iii), it can be seen that the extraction electrode 43 is located on the insulating dielectric layer 44.

S124, forming a slot in the insulating medium layer at a position corresponding to the emitting electrode so as to expose the emitting electrode.

The implementation manner of forming the slot 44A in the insulating medium layer 44 corresponding to the position of the emitter electrode 42 may refer to the above embodiment, and will not be described herein again.

Referring to fig. 12B (iv), it can be seen that the slot 44A is present in the insulating dielectric layer 44, and the emitter electrode 42 is located in the slot 44A to contact the substrate layer 41.

S102, forming a first film layer covering the extraction electrode, wherein the first film layer, the grooves and the substrate layer form a microcavity.

The preparation method provided in the embodiment of the present application may use a chip-level manufacturing process such as coating, vapor deposition, etc. to form the insulating dielectric layer 44 on the substrate layer 41, form the extraction electrode 43 on the insulating dielectric layer 44, and form the first film layer 45 on the extraction electrode. Therefore, the electron source provided by the embodiment of the application has a simple structure, and the encapsulation of the electron source can be completed only by adopting a chip-level manufacturing process, so that the electron source provided by the embodiment of the application can be quantitatively produced.

Further, the electron source prepared by the embodiment of the application includes: a substrate layer 41; an emitter electrode 42 in electrical contact with the substrate layer 41; an insulating dielectric layer 44 provided on the substrate layer 41, the insulating dielectric layer 44 being provided with a groove 44A; an extraction electrode 43 provided on the insulating dielectric layer 44; a first film layer covering the extraction electrode 43. Wherein the first film layer, the grooves 44A and the substrate layer 41 form a microcavity for accommodating the emitter electrode 42. The pore size of the first film layer is greater than or equal to the electron particle size, and the pore size of the first film layer 45 is less than or equal to the particle size of the gas molecules.

The insulating dielectric layer 44 is provided with a slot 44A, and the slot 44A, the first film layer 45 and the substrate layer 41 form a microcavity for accommodating the emitter electrode 42, wherein the pressure of the microcavity is smaller than a set value. Since the aperture of the first film 45 is larger than the particle size of electrons, the first film 45 may allow electrons emitted from the emitter electrode 42 to exit the microcavity; since the pore diameter of the first film layer 45 is smaller than the particle diameter of the gas molecules, the first film layer 45 can block the gas molecules in the environment from entering the microcavity, so that fewer gas molecules can be ensured in the microcavity. Because fewer gas molecules are in the microcavity, the probability of the electrons emitted by the emitter electrode 42 striking the gas molecules is lower, and accordingly, the number of ions formed by the electrons striking the gas molecules is smaller, the loss to the emitter electrode 42 in the ion movement process is lower, the lifetime of the emitter electrode 42 is longer, and accordingly, the lifetime of the electron source is longer.

Further, the number of ions formed by the electrons striking the gas molecules is small, the shape change of the emitter electrode 42 due to the collision of the ions is small, the field enhancement coefficient change due to the shape change is small, and the stability of the electron source is good. Further, the microcavity has fewer gas molecules, the number of gas molecules adsorbed on the surface of the emitter electrode 42 is lower, and the stability of the electron source is better.

The embodiment of the present application further provides a method for forming the first film layer 45 on the extraction electrode 43, where the method may include S1A and S1B:

S1A transfers the first film layer to the extraction electrode.

Because the extraction electrode has a hollow, the difficulty of forming the first film layer 45 on the hollow is relatively high, and as a feasible implementation manner, the first film layer 45 may be formed on a flat surface in advance.

As a possible implementation, the first film layer 45 may be formed by vapor deposition.

Then, the first film 45 is transferred onto the extraction electrode 43, so that the first film 45, the grooves 44A and the substrate 41 form a microcavity.

S1B reduces the ambient pressure to a first pressure so as to discharge the gas in the microcavity through a gap between the first film layer and the extraction electrode.

In the initial stage of transferring the first film 45 onto the extraction electrode 41, some gaps exist between the first film 45 and the extraction electrode 43, and the gaps can be used for exhausting the gas in the microcavity.

The lowering of the ambient pressure to the first pressure may be accomplished by transferring the electron source into the cavity 143. In this implementation, the pressure in the cavity is the ambient pressure. The gas within the chamber 143 may be vented through a valve 143A in communication with the chamber such that the pressure within the chamber 143 is reduced to a first pressure. Wherein the first pressure is less than the pressure within the microcavity. Pressure difference exists between the cavity and the microcavity, and under the action of the pressure difference, the gas in the microcavity is caused to be discharged through the gap between the first film layer 45 and the extraction electrode 43.

Specifically, reference may be made to fig. 13 (a), and the right side view in fig. 13 is a partial enlarged view of the area a in the left side view. It can be seen that the gas 131 within the microcavity is vented through the gap 132 between the first film layer 45 and the extraction electrode 43.

The embodiment of the present application does not specifically limit the pressure in the cavity, and considers that the exhaust efficiency of the gas in the microcavity is inversely related to the first pressure, as a feasible implementation manner, the first pressure may beTo be less than or equal to 1e ^-7 Pa。

In order to improve the air tightness of the microcavity, as a feasible implementation manner, the forming method of the first film layer after the step S1B further includes: S1C increases the ambient pressure to a second pressure to close a gap between the first film layer and the extraction electrode, wherein the second pressure is higher than the first pressure.

When the pressure in the micro-cavity reaches the set pressure, the ambient pressure can be raised to the second pressure. The raising of the ambient pressure to the second pressure may be accomplished by, but is not limited to, filling the cavity 133 with gas through the valve 133A. After the chamber is filled with gas, the pressure in the chamber 133 is greater than the pressure in the microcavity, and a pressure difference exists between the chamber and the microcavity. Under the action of the pressure difference, the gap between the first film 45 and the extraction electrode 43 gradually decreases. Specifically, referring to fig. 13 (two), the right side view of fig. 13 (two) is a partially enlarged view of the area a of the left side view, and it can be seen that the gap 132 between the first film 45 and the extraction electrode 43 is reduced in fig. 13 (two) compared with fig. 13 (one).

Finally, the microcavity can be kept closed by bonding with van der waals force between the first film 45 and the extraction electrode 43, and specifically, reference may be made to fig. 13 (three), where the right-hand drawing in fig. 13 is a partial enlarged view of the region a in the left-hand drawing. Therefore, the air tightness of the microcavity can be improved by the implementation mode.

The embodiment of the present application does not specifically limit the second pressure, and considering that the larger the second pressure is, the better the air tightness of the microcavity is, as a feasible implementation manner, the ratio of the second pressure to the first pressure may be greater than or equal to 10.

Generally, electrons emitted from an electron source need to travel a certain distance in a cavity, and collide with gas in the cavity during the process of electron propagation, so as to affect the collimation of the electrons. In general, the pressure in the cavity is inversely related to the collimation of the electrons, and as a feasible implementation manner, in order to ensure the collimation of the electrons, the ratio of the second pressure to the first pressure may be less than or equal to 100.

As a possible implementation, before step S102, the method may further include forming a second film layer on the surface of the emitter electrode 42. The driving voltage of the emitting electrode covered with the second film layer is smaller than the driving voltage of the emitting electrode.

As a possible implementation, before step S102, the method may further include forming a second film layer on the surface of the emitter electrode 42. The hardness of the second film layer is greater than the hardness of the emitter electrode 42.

In this embodiment of the present application, the effects achieved by different implementation manners of the preparation method may refer to the technical effects brought by the different implementation manners of the above-mentioned electron source, which are not described herein again.

Embodiments of the present application also provide a computer program product comprising one or more instructions executable by a processor to perform the control method provided by the embodiments of the present application.

In this implementation manner, the technical effects brought by any one possible implementation manner of the computer program product may refer to the technical effects brought by the control method, which are not described herein.

The embodiment of the application also provides a chip system, which comprises a processor and a memory; a memory for storing processor-executable instructions; the processor is configured to execute the control method provided by the embodiment of the application.

In this implementation manner, the technical effects brought by any possible implementation manner of the chip system may refer to the technical effects brought by the control method provided by the embodiment of the present application, which are not described herein again.

Having described embodiments of the present application and their advantages in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the embodiments of the application as defined by the appended claims. Variations and alternatives will be apparent to those skilled in the art from the foregoing description, and are intended to be within the scope of the embodiments disclosed herein. Therefore, the protection scope of the embodiments of the application shall be subject to the protection scope of the claims.

Claims

1. An electron source, comprising:

a substrate layer;

the insulating medium layer is arranged on the substrate layer and is provided with a slot;

a transmitting electrode disposed within the slot and in electrical contact with the substrate layer;

the extraction electrode is arranged on the insulating medium layer and used for enabling the emission electrode to emit electrons;

the first film layer covers the extraction electrode, and the first film layer, the grooves and the substrate layer form a microcavity; the aperture of the first membrane layer is larger than or equal to the electron particle size, the aperture of the first membrane layer is smaller than the particle size of the gas molecules, and the pressure in the microcavity is smaller than a preset value.

2. The electron source of claim 1, wherein the first film layer comprises a conductive film layer.

3. The electron source of claim 2, wherein the first film layer further comprises a support film layer disposed in a stack with the conductive film layer;

the conductive film layer is stacked on a side adjacent to the extraction electrode and is in electrical contact with the extraction electrode, and the support film layer has a stiffness greater than that of the conductive film layer.

4. The electron source of claim 2, wherein the first film layer comprises two conductive film layers and a support film layer stacked between the two conductive film layers, the two conductive film layers being electrically connected;

the rigidity of the supporting film layer is greater than that of the conductive film layer.

5. The electron source of any of claims 2-4, wherein the conductive film layer is graphene.

6. The electron source according to claim 3 or 4, wherein the support film layer is one or a mixture of BN and SiNx.

7. The electron source of any of claims 1-6, wherein an area of the first film layer is less than or equal to an area of the extraction electrode, the area of the first film layer being greater than an area of the slot proximate to an opening of the first film layer.

8. The electron source according to any one of claims 1 to 7, further comprising a second film layer, wherein the second film layer covers the surface of the emitter electrode, wherein the driving voltage of the emitter electrode covered with the second film layer is smaller than the driving voltage of the emitter electrode, and/or wherein the hardness of the second film layer is larger than the hardness of the emitter electrode.

9. The electron source according to claim 8, wherein the second film layer is AlN or LaB ₆ 、TiN、Y ₂ O ₃ One or more of diamond-like carbon.

10. The electron source according to any of claims 1-9, wherein the electron source comprises at least one emitter electrode.

11. A method of preparation, characterized in that it comprises, for preparing an electron source according to any of claims 1 to 10;

forming an insulating medium layer, a transmitting electrode and an extracting electrode on a substrate layer, wherein the insulating medium layer is positioned on the substrate layer, and the extracting electrode is positioned on the insulating medium layer; the insulating medium layer is provided with a slot, and the transmitting electrode is positioned in the slot and is in electrical contact with the substrate layer;

and forming a first film layer covering the extraction electrode, wherein the first film layer, the grooves and the substrate layer form a microcavity.

12. The method of claim 11, wherein the step of forming a first film layer on the extraction electrode comprises:

transferring the first film layer onto the extraction electrode;

and reducing the ambient pressure to a first pressure so as to discharge the gas in the microcavity through a gap between the first film layer and the extraction electrode.

13. The method of manufacturing according to claim 12, characterized in that the method of manufacturing further comprises:

and raising the ambient pressure to a second pressure to close a gap between the first film layer and the extraction electrode, wherein the second pressure is greater than the first pressure.

14. The method of claim 13, wherein the ratio of the second pressure to the first pressure is greater than or equal to 10.

15. The method according to any one of claims 11 to 14, characterized in that the method further comprises, before the step of forming the first film layer on the extraction electrode:

16. A chip lithographic apparatus according to any one of claims 1 to 10, wherein the electron source and the deflector are arranged to direct electrons from the electron source onto a target object.

17. A chip detection apparatus comprising an electron source according to any of claims 1-10, a deflector for guiding electrons from the electron source onto a target object, and a detector for detecting outgoing electrons, including transmitted electrons, or scattered electrons, or secondary electrons after incidence on the target object.