CN117174641A - 在基板边缘上的等离子体密度控制 - Google Patents
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Abstract
本公开的实现整体涉及一种用于减少等离子体处理腔室中的基板上的颗粒污染的设备。用于减少的颗粒污染的设备包括腔室主体、耦接到所述腔室主体的盖。所述腔室主体和所述盖之间限定处理容积。所述设备还包括设置在所述处理容积中的基板支撑件以及边缘环。所述边缘环包括设置在基板上方的内部凸缘、连接到所述内部凸缘的顶表面、与所述顶表面相对并从所述基板支撑件径向向外延伸的底表面、以及在所述底表面与所述内部凸缘之间的内部台阶。为了避免在等离子体断电时将颗粒沉积在正在处理的所述基板上,所述边缘环使高等离子体密度区从所述基板的边缘区域被移开。
Description
本申请是申请日为2018年4月6日、申请号为“201880009737.6”、发明名称为“在基板边缘上的等离子体密度控制”的发明专利申请的分案申请。
技术领域
本公开的实现整体涉及用于一种减少等离子体处理腔室中的基板上的颗粒污染的设备。
背景技术
等离子体增强化学气相沉积(PECVD)工艺是将电磁能施加到至少一种前驱物气体或蒸气上以将前驱物转化为反应性等离子体的化学工艺。使用PECVD有许多优点,包括但不限于降低形成膜所需的温度、提高膜的形成速率、增强形成的层的性质。由等离子体电离的气体或蒸气的颗粒通过等离子体鞘扩散并被吸收到基板上以形成薄膜层。等离子体可以在处理腔室内产生,即,原位产生,或在远离处理腔室定位的远程等离子体发生器中产生。该工艺广泛地用于在基板上沉积材料以生产高质量和高性能的半导体器件。
在诸如PECVD的等离子体工艺期间的颗粒污染是在这些半导体器件的生产期间的薄膜的沉积和蚀刻的主要障碍。因此,需要改善的设备来减少等离子体处理腔室中的颗粒污染。
发明内容
本公开的实现整体涉及一种用于减少等离子体处理腔室中的基板上的颗粒污染的设备。在一种实现中,用于减少的颗粒污染的所述设备包括腔室主体和耦接到所述腔室主体的盖。所述腔室主体和所述盖之间限定处理容积。所述设备还包括设置在所述处理容积中的基板支撑件以及边缘环。所述边缘环包括设置在基板上方的内部凸缘、连接到所述内部凸缘的顶表面、与所述顶表面相对并从所述基板支撑件径向向外延伸的底表面、以及在所述底表面与所述内部凸缘之间的内部台阶。
在另一个实现中,公开了一种等离子体处理设备,并且所述等离子体处理设备包括腔室主体和耦接到所述腔室主体的盖。所述腔室主体和所述盖之间限定处理容积。所述等离子体处理设备进一步包括设置在所述处理容积中的基板支撑件和设置在所述基板支撑件上的边缘环。所述边缘环包括径向向内延伸的内部凸缘和连接到所述内部凸缘的顶表面。所述边缘环的所述顶表面是倾斜的。所述边缘环还包括与所述顶表面相对并从所述基板支撑件径向向外延伸的底表面和在所述底表面与设置在所述基板支撑件上的所述内部凸缘之间的内部台阶。
在又一个实现中,公开了一种等离子体处理设备,所述等离子体处理设备包括腔室主体和耦接到所述腔室主体的盖。所述腔室主体和所述盖之间限定处理容积。所述等离子体处理设备还包括设置在所述处理容积中的基板支撑件和设置在所述基板支撑件上的边缘环。所述边缘环包括径向向内延伸的内部凸缘和耦接到所述内部凸缘的顶表面。所述边缘环的所述顶表面是倒角的。所述边缘环还包括与所述顶表面相对并从所述基板支撑件径向向外延伸的底表面和在所述底表面与设置在所述基板支撑件上的所述内部凸缘之间的内部台阶。
附图说明
因此,为了能够详细地理解本公开的上述特征的方式,可以通过参考实现获得上面简要地概述的本公开的更具体的描述,实现中的一些在附图中示出。然而,应当注意,附图仅示出了示例性实现,并且因此不应视为限制范围,因为本公开可以允许其它同等有效的实现。
图1示出了根据本文所述的实现的等离子体处理腔室的示意性横截面视图。
图2示出了根据本文所述的实现的边缘环的局部横截面视图。
图3示出了根据本文所述的另一个实现的边缘环的局部横截面视图。
为了便于理解,在可能情况下,使用相同的附图标记来表示各图共有的相同元件。附图未必按比例绘制,并且为了清楚起见,可以进行简化。构想到,一个实现的要素和特征可以有利地并入其它实现方式而无需进一步叙述。
具体实施方式
图1示出了根据本文描述的实现的等离子体处理腔室100的示意性横截面视图。处理腔室100可以是等离子体增强化学气相沉积(PECVD)腔室或其它等离子体增强处理腔室。可以受益于本文所述的实现的示例性处理腔室是可从加利福尼亚州圣克拉拉市应用材料公司(Applied Materials,Inc.,Santa Clara,CA)获得的支持PECVD的腔室的系列。构想到,来自其它制造商的其它类似地配备的处理腔室也可以受益于本文所述的实现。处理腔室100以腔室主体102、设置在腔室主体102内的基板支撑件104、以及耦接到腔室主体102并将基板支撑件104封闭在内部处理容积120中的盖组件106为特征。基板154通过开口126提供到处理容积120。
电极108可以邻近腔室主体102设置并将腔室主体102与盖组件106的其它部件分开。电极108可以是盖组件106的一部分,或可以是单独的侧壁电极。电极108可以是环形或环状构件,并且可以是环形电极。电极108可以是围绕包围处理容积120的处理腔室100的圆周的连续环,或如果需要可以在选定位置处是间断的。电极108也可以是穿孔电极,诸如穿孔环或网状电极。电极108也可以是板状电极,例如,二次气体分配器。
隔离器110接触电极108并使电极108与气体分配器112和腔室主体102电分离和热分离。隔离器110可以由一种或多种介电材料制成或包含一种或多种介电材料。示例性介电材料可以是或包括一种或多种陶瓷、金属氧化物、金属氮化物、金属氮氧化物、氧化硅、硅酸盐或它们的任何组合。例如,隔离器110可以包含氧化铝、氮化铝、氧氮化铝或它们的任何组合或由其形成。气体分配器112以开口118为特征,开口118用于允许工艺气体进入处理容积120。工艺气体可以经由导管114供应到处理腔室100,并且工艺气体可以在流过开口118之前进入气体混合区域116。气体分配器112可以耦接到电源142,诸如RF发生器、DC电源、脉冲DC电源和脉冲RF电源也可以被使用。
电极108可以耦接到调谐电路128,该调谐电路128控制处理腔室100的接地路径。调谐电路128包括电子传感器130和电子控制器134,电子控制器134可以是可变电容器。调谐电路128可以是包括一个或多个电感器132的LLC电路。调谐电路128以与电子控制器134串联的第一电感器132A和与电子控制器134并联的第二电感器132B为特征。电子传感器130可以是电压或电流传感器,并且可以耦接到电子控制器134以提供对处理容积120内的等离子体状态的一定程度的闭环控制。
第二电极122可以耦接到基板支撑件104。第二电极122可以嵌入基板支撑件104内或耦接到基板支撑件104的表面。第二电极122可以是板、穿孔板、网状物、金属丝网或任何其它分布布置。第二电极122可以是调谐电极,并且可以通过设置在基板支撑件104的轴144中的导管146(例如具有选定电阻(诸如约50Ω)的电缆)耦接到第二调谐电路136。第二调谐电路136可以具有第二电子传感器138和第二电子控制器140,第二电子控制器140可以是第二可变电容器。第二电子传感器138可以是电压或电流传感器,并且可以耦接到第二电子控制器140以提供对处理容积120中的等离子体状态的进一步控制。
可以是偏压电极和/或静电吸附电极的第三电极124可以耦接到基板支撑件104。第三电极124可以通过包含在电路180中的滤波器148耦接到第二电源150。滤波器148可以是阻抗匹配电路。第二电源150可以是DC电源、脉冲DC电源、RF电源、脉冲RF电源或它们的任何组合。
图1的盖组件106和基板支撑件104可以与任何处理腔室一起用于等离子体或热处理。来自其它制造商的腔室也可以与上述部件一起使用。
基板支撑件104可以包含一种或多种金属或陶瓷材料或由其形成。示例性金属或陶瓷材料可以是或包括一种或多种金属、金属氧化物、金属氮化物、金属氮氧化物或它们的任何组合。例如,基板支撑件104可以包含铝、氧化铝、氮化铝、氧氮化铝或它们的任何组合或由其形成。在一个实现中,基板支撑件104的表面可以被配置为在处理期间支撑边缘环160。
在另一个实现中,边缘环160的内径可以大于基板154的外径。在这种实现中,一个、两个、三个、四个或更多个保持器156(图1中描绘了一个保持器)可以被配置为在将基板154传送到基板支撑件104和将基板从基板支撑件104传送出时支撑边缘环160。多个保持器156可以位于腔室主体102的内壁上、在彼此间隔开的位置处。在一个或多个实施例中,降低基板支撑件104以与开口126对准。当基板支撑件104朝向开口106降低时,边缘环160与保持器156接触并由保持器156支撑。一旦支撑件104与开口126对准时,当将基板154引入处理腔室100中或从中移除时,基板154可以经由开口126传送到基板支撑件104或从基板支撑件104传送出。当基板支撑件104被升高离开开口126时,基板支撑件104与从保持器156抬起的边缘环160接触并支撑该边缘环160。一旦处于处理位置,基板支撑件104保持支撑边缘环160。
边缘环160可以由一种或多种陶瓷材料形成,并且可以具有环形形状。在一个或多个示例中,基板支撑件104和边缘环160中的每个独立地包括一种或多种陶瓷材料。边缘环160可以被配置为接合基板支撑件104,在一些情况下,边缘环160直接地搁置在基板支撑件104上。在一个实现中,基板支撑件104可以具有沿基板支撑表面的圆周形成的环形突出部。环形突出部可以被配置成当基板支撑件104处于处理位置时耦接到边缘环160并支撑该边缘环160,例如其中边缘环160搁置在环形突出部上。
边缘环160的大小可以设为从基板支撑件104径向向外延伸。这样,边缘环160的外径可以大于基板支撑件104的外径。因此,边缘环160的底表面的径向延伸超过基板支撑件104的部分可以配置成与保持器156接合。保持器156可以是从腔室侧壁或衬里朝向基板支撑件径向向内延伸的连续或不连续环形架。在一个实现中,保持器156可以是在处理腔室100的周边部分处围绕处理腔室100均等地或不等地分布的三个突起。在另一个实现中,突起可以是多于三个突起,它们可以围绕处理腔室100周边均等地、不等地和/或对称地分布。保持器156可以具有支撑表面,该支撑表面基本上平行于边缘环160的接触表面。或者,保持器156可以具有不平行于边缘环的接触表面的支撑表面。例如,在一些情况下,保持器156可以具有向下倾斜的支撑表面,以减小保持器156与边缘环160之间的面接触。在操作中,保持器156接合边缘环160以在基板154从处理腔室100移除时保持边缘环160远离基板154。
边缘环160可以包含一种或多种陶瓷材料或由其形成。在一个实现中,边缘环160由氮化铝形成或包含氮化铝。边缘环160可以包括在基板154上方和之上延伸的内部凸缘。在一种实现中,内部凸缘可以具有弯曲或圆形边缘。在另一个实现中,内部凸缘可以具有平坦竖直内壁。
在一种实现中,边缘环160是具有平坦顶表面的环形环。在图2的实现中,边缘环260是具有倾斜顶表面262的环形环。图2示出了根据本文所述的实现的边缘环的局部横截面视图。边缘环260可以用在处理腔室100中。边缘环260是具有倾斜顶表面262的环形环,该倾斜顶表面262在朝向内圆周的方向上更高而在朝向外圆周的方向上更低。倾斜顶表面262可以是斜面表面。换句话说,倾斜顶表面262径向向外减小。边缘环260包括内部凸缘264。倾斜顶面262与内部凸缘264相连并作为内部凸缘264的一部分。内部凸缘264朝向边缘环260的内圆周径向向外延伸。内部凸缘264可以具有平坦竖直内壁。内部凸缘264在基板154上方和之上延伸。内部凸缘264与内部台阶266相连。内部台阶266是直角突起。内部台阶266位于内部凸缘264下方并从内部凸缘264径向延伸。内部台阶266具有与基板支撑件104接合的底表面。内部台阶266与底表面268和内部凸缘264相连。底表面268与倾斜顶面262相对并通过竖直壁270连接到倾斜顶表面262。底表面268从基板支撑件104径向向外延伸并被配置为与保持器156接合。
图3示出了根据本文所述的另一个实现的边缘环的局部横截面视图。在图3的实现中,边缘环360是具有倾斜顶表面362的环形环。边缘环360可以用在处理腔室100中。边缘环360类似于边缘环260,包括内部凸缘364、内部台阶366、底表面368和竖直壁370。边缘环360是具有倾斜顶表面362的环形环,该顶表面362在朝向内圆周的方向上更低而在朝向外圆周的方向上更高。换句话说,倾斜顶表面362的高度径向向外增大。倾斜顶表面362可以是斜面表面。在一个实现中,倾斜顶表面362包括倒角边缘372。在另一个实现中,倾斜顶表面362具有圆形边缘。
在操作中,在处理容积120中产生等离子体。在使处理容积120中的等离子体通电时,在等离子体与第一电极108之间建立电位差。在等离子体与第二电极122之间也建立电位差。由此形成的等离子体可以在等离子体的反应区中产生颗粒。当使等离子体通电时,颗粒通常保持带静电,因此颗粒大部分被捕获在等离子体鞘内。为了避免在等离子体断电时将颗粒沉积在正在处理的基板上,边缘环160使高等离子体密度区从基板的边缘区域被移开。边缘环160从基板支撑件104的升高将颗粒从基板154被推离而朝向排气装置152。另外,可以在等离子体与边缘环160之间建立电位差,以排斥带电颗粒使其远离基板154。
边缘环还提供对在基板边缘附近的等离子体密度的更多控制,以减少在等离子体终止期间的边缘喷涂缺陷。在某些实现中,边缘环提供表面以保护基板免受落下颗粒影响,而且也引导颗粒离开该基板的表面。等离子体颗粒替代地被引向排气装置并远离基板。
虽然前述内容针对的是本公开的实现,但是可以在不脱离本公开的基本范围的情况下设计本公开的其它和进一步实现。
Claims (20)
1.一种边缘环,包括:
顶表面;
底表面,所述底表面与所述顶表面相对并且径向向外延伸;
外部竖直壁,所述外部竖直壁在所述顶表面和所述底表面之间延伸并且连接到所述顶表面和所述底表面;
内部竖直壁,所述内部竖直壁与所述外部竖直壁相对;
内部凸缘,所述内部凸缘从所述内部竖直壁径向向内延伸;以及
内部台阶,所述内部台阶设置在所述内部壁和所述底表面之间延伸并且连接到所述内部壁和所述底表面,其中:
所述内部台阶具有与第二表面相邻的第一表面;
所述第一表面被配置为与基板支撑件的顶表面接触并且所述第二表面被配置为与所述基板支撑件的侧表面接触;并且
所述内部凸缘被配置为在设置在所述基板支撑件上的基板上方延伸。
2.如权利要求1所述的边缘环,其中所述内部凸缘相对于所述内部竖直壁以直角延伸。
3.如权利要求1所述的边缘环,其中所述边缘环的所述顶表面是倾斜的。
4.如权利要求1所述的边缘环,其中所述边缘环的所述顶表面在朝向所述边缘环的内圆周的方向上倾斜更高并且在朝向所述边缘环的外圆周的方向上倾斜更低。
5.如权利要求1所述的边缘环,其中所述边缘环的所述顶表面在朝向所述边缘环的内圆周的方向上倾斜更低并且在朝向所述边缘环的外圆周的方向上倾斜更高。
6.如权利要求1所述的边缘环,其中所述边缘环的所述顶表面是平坦的。
7.如权利要求1所述的设备,其中所述边缘环具有圆形边缘。
8.如权利要求1所述的设备,其中所述边缘环的所述顶表面是倒角的。
9.如权利要求1所述的设备,其中所述边缘环包括陶瓷材料。
10.如权利要求1所述的边缘环,其中所述边缘环包括铝。
11.一种边缘环,包括:
顶表面;
底表面,所述底表面与所述顶表面相对并且径向向外延伸;
外部竖直壁,所述外部竖直壁在所述顶表面和所述底表面之间延伸并且连接到所述顶表面和所述底表面;
内部竖直壁,所述内部竖直壁与所述外部竖直壁相对;
内部凸缘,所述内部凸缘从所述内部竖直壁径向向内延伸,其中所述内部凸缘相对于所述内部竖直壁以直角延伸;以及
内部台阶,所述内部台阶设置在所述内部壁和所述底表面之间延伸并且连接到所述内部壁和所述底表面,其中:
所述内部台阶具有与第二表面相邻的第一表面;
所述第一表面被配置为与基板支撑件的顶表面接触并且所述第二表面被配置为与所述基板支撑件的侧表面接触。
12.如权利要求11所述的边缘环,其中所述边缘环的所述顶表面是倾斜的。
13.如权利要求11所述的边缘环,其中所述边缘环的所述顶表面在朝向所述边缘环的内圆周的方向上倾斜更高并且在朝向所述边缘环的外圆周的方向上倾斜更低。
14.如权利要求11所述的边缘环,其中所述边缘环的所述顶表面在朝向所述边缘环的内圆周的方向上倾斜更低并且在朝向所述边缘环的外圆周的方向上倾斜更高。
15.如权利要求11所述的边缘环,其中所述边缘环的所述顶表面是平坦的。
16.如权利要求11所述的边缘环,其中所述边缘环具有圆形边缘。
17.如权利要求11所述的设备,其中所述边缘环的所述顶表面是倒角的。
18.如权利要求11所述的设备,其中所述边缘环包括陶瓷材料。
19.如权利要求11所述的边缘环,其中所述边缘环包括铝。
20.一种边缘环,包括:
顶表面;
底表面,所述底表面与所述顶表面相对并且径向向外延伸;
外部竖直壁,所述外部竖直壁在所述顶表面和所述底表面之间延伸并且连接到所述顶表面和所述底表面;
内部竖直壁,所述内部竖直壁与所述外部竖直壁相对;
内部凸缘,所述内部凸缘从所述内部竖直壁径向向内延伸;以及
内部台阶,所述内部台阶设置在所述内部壁和所述底表面之间延伸并且连接到所述内部壁和所述底表面,其中:
所述内部台阶具有与第二表面相邻的第一表面;
所述第一表面被配置为与基板支撑件的顶表面接触并且所述第二表面被配置为与所述基板支撑件的侧表面接触;并且
其中所述边缘环包括陶瓷材料。
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2018
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- 2018-04-06 WO PCT/US2018/026441 patent/WO2018187679A1/en active Application Filing
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CN110249416A (zh) | 2019-09-17 |
US10790121B2 (en) | 2020-09-29 |
KR20190128638A (ko) | 2019-11-18 |
US20180294146A1 (en) | 2018-10-11 |
US11495440B2 (en) | 2022-11-08 |
US20200381222A1 (en) | 2020-12-03 |
JP2020516770A (ja) | 2020-06-11 |
WO2018187679A1 (en) | 2018-10-11 |
CN110249416B (zh) | 2023-09-12 |
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