CN117153915A - Forward mismatch solar cell realizing strong radiation resistance by using lattice compressive stress - Google Patents

Forward mismatch solar cell realizing strong radiation resistance by using lattice compressive stress Download PDF

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CN117153915A
CN117153915A CN202310980783.3A CN202310980783A CN117153915A CN 117153915 A CN117153915 A CN 117153915A CN 202310980783 A CN202310980783 A CN 202310980783A CN 117153915 A CN117153915 A CN 117153915A
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cell
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lattice
compressive stress
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刘如彬
郭宏亮
张启明
孙强
张恒
姚立勇
薛超
黄洪昌
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Cetc Blue Sky Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells

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Abstract

The invention discloses a forward mismatch solar cell structure for realizing strong radiation resistance by using lattice compressive stress. The solar cell comprises a bottom electrode, a Ge sub-cell, a GaInP window layer, a graded buffer layer, a second tunnel junction, a GaInAs sub-cell, a first tunnel junction, an AlGaInP sub-cell, a GaAs contact layer, an upper electrode and an antireflection film, and Ga 1‑x In x The relaxation degree of the As sub-cell is 80-99.99%, ga 1‑xx In x The back surface field of the As sub-cell is AlGaInAs, the window layer is GaInP, and lattice constants of the back surface field layer and the window layer are smaller than Ga 1‑x In x An As sub-cell; above the GaInAs subcell is an AlGaInP subcell having a lattice constant not less than that of the GaInAs subcell. By being on germanium materialThe structure of the growth gradual change buffer layer controls the relaxation degree to ensure that Ga 1‑x In x The As subcells are under compressive stress. The invention can realize the improvement of the radiation resistance of the battery through compressive stress.

Description

Forward mismatch solar cell realizing strong radiation resistance by using lattice compressive stress
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a forward mismatch solar cell capable of realizing strong radiation resistance by using lattice compressive stress.
Background
The solar cell is a device for converting light energy into electric energy, absorbs photons from the sun, generates electron-hole pairs in a semiconductor, and then realizes electron-hole separation by using a built-in electric field to generate photo-generated current. For a space solar cell, the space solar cell can be bombarded by high-energy particles of the earth radiation band in the in-orbit service process, defects are generated in the cell, the carrier recombination rate is improved, and the cell efficiency is reduced. The radiation resistance is therefore an important indicator of solar cells.
The current method for improving the irradiation resistance comprises structural optimization design and the like, wherein the current which is lack of thinning is supplemented by using a Bragg back reflector (DBR) after thinning is performed on each sub-cell. Although the above approach may improve the approach to partially improve EOL performance, it does not fundamentally reduce irradiation damage.
The structure of the invention comprises a metal film substrate, a high-reflectivity metal layer, a dielectric layer and a thin four-junction epitaxial layer which are sequentially arranged; the method comprises preparing thin four-junction epitaxial layer by metal organic chemical vapor deposition; preparing an omnibearing reflector on the surface of an epitaxial wafer, growing a dielectric layer by adopting a plasma enhanced chemical vapor deposition technology, corroding periodical micropores on the dielectric layer, and evaporating a high-reflectivity metal material on the surface of the epitaxial wafer; preparing a metal film substrate on the surface of the omnibearing reflector by adopting an electroplating technology; the gallium arsenide substrate and the GaInP etch stop layer are removed by chemical etching, respectively. The four-junction solar cell has the advantages that the thickness of the four sub-cells is greatly reduced, the loss of charged particle radiation to the four-junction cells is greatly reduced, the defect density is reduced, and the irradiation resistance of the four-junction cells is improved, so that the application of the four-junction cells in the field of aerospace is promoted. However, the battery mainly adopts a thinning method to improve the radiation resistance, and the cost of current is necessarily sacrificed.
Disclosure of Invention
The invention aims to solve the technical problem of providing a positive mismatch solar cell which realizes strong radiation resistance by using lattice compressive stress, improves an atomic displacement threshold by the compressive stress, reduces defect concentration caused by irradiation, and further improves radiation resistance on the basis of the existing structure.
In order to solve the technical problems, the invention adopts the following technical scheme: a forward mismatch solar cell realizing strong radiation resistance by using lattice compressive stress comprises a bottom electrode, a Ge sub-cell, a GaInP window layer, a gradual change buffer layer, a second tunnel junction, a GaInAs sub-cell, a first tunnel junction, an AlGaInP sub-cell, a GaAs contact layer, an upper electrode and an antireflection film sequentially from a bottom layer to a top layer according to a growth direction, wherein Ga 1-x In x The relaxation degree of the As sub-cell is 80-99.99%, ga 1-x In x The back surface field of the As sub-cell is AlGaInAs, the window layer is GaInP, and lattice constants of the back surface field layer and the window layer are smaller than Ga 1-x In x An As sub-cell; above the GaInAs subcell is an AlGaInP subcell having a lattice constant not less than the InGaAs subcell.
The Ga 1-x In x As cell comprising n-Ga doped n-type 1-x In x As emitter layer and p-type doped p-Ga 1- x In x An As base region layer, wherein x is more than or equal to 0.06 and less than or equal to 0.7; comprising n-doped Ga 1-z In z P-window layer and P-doped (Al g Ga 1-g ) 1-y In y An As back surface field layer, wherein y<x,0.1≤g≤0.6，Wherein said n-Ga 1-x In x The doping agent of the As emitting region layer is Si, se or Te, and the doping concentration is 1×10 17 -1×10 19 cm -3 The thickness range is 10-200nm; the p-Ga 1--x In x The doping agent of the As base region layer is Zn, mg or C, and the doping concentration is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 100-3000 nm; the n-Ga 1-z In z The P window layer has a doping agent of Si, se or Te with a doping concentration of 5×10 17 -1×10 220 cm -3 The thickness range is 10-200nm; the p- (Al) g Ga 1-g ) 1-y In y The doping agent of the As back surface field layer is Zn, mg or C, and the doping concentration is 5 multiplied by 10 17 -1×10 20 cm -3 The thickness is in the range of 10-200nm.
The Ga 1-x In x The thickness of the As sub-cell is between 0.8 and 2.0 um.
The thickness of the back surface field layer and the window layer is in the range of 30-100 nm.
The beneficial effects of the invention are as follows:
(1) Compared with the conventional three-junction solar cell, the cell provided by the invention has better radiation resistance.
(2) Compared with the existing method for enhancing radiation resistance through thinning and sacrificing current, the method can improve radiation resistance from the aspect of inhibiting defect generation. And simultaneously, the design freedom degree is increased.
Drawings
Fig. 1 is a structural view of a battery according to the present invention.
Fig. 2 is an I-V curve of the battery of the present invention.
In the figure, a p-type germanium substrate; 2. n-Ge; 3. a GaInP window layer; 4. a gradual change buffer layer; 5. a second tunnel junction; 6. an AlGaInAs back field; 7. an InGaAs base region; 8. InGaAs emitter region; 9. an InGaP window layer; 10. a first tunnel junction; 11. an AlGaInP back surface field layer; 12. an AlGaInP base region; 13. an AlGaInP emission region; 14. an AlInP window layer; 15. a GaAs contact layer; 16. an upper electrode; 17. a lower electrode; 18. an antireflection film.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments, and that all other embodiments obtained by persons of ordinary skill in the art without making creative efforts based on the embodiments in the present invention are within the protection scope of the present invention.
The invention relates to a positive mismatch solar cell realizing strong radiation resistance by using lattice compressive stress, which comprises a bottom electrode, a Ge sub-cell, a GaInP window layer, a gradual change buffer layer, a second tunnel junction, a GaInAs sub-cell, a first tunnel junction, an AlGaInP sub-cell, a GaAs contact layer, an upper electrode and an antireflection film from a bottom layer to a top layer in turn according to the growth direction, wherein the Ga 1-x In x The relaxation degree of the As sub-cell is 80-99.99%, ga 1-x In x The back surface field of the As sub-cell is AlGaInAs, the window layer is GaInP, and lattice constants of the back surface field layer and the window layer are smaller than Ga 1-x In x An As sub-cell; above the GaInAs subcell is an AlGaInP subcell having a lattice constant not less than the InGaAs subcell.
The Ga 1-x In x As cell comprising n-Ga doped n-type 1-x In x As emitter layer and p-type doped p-Ga 1- x In x An As base region layer, wherein x is more than or equal to 0.06 and less than or equal to 0.7; comprising n-doped Ga 1-z In z P-window layer and P-doped (Al g Ga 1-g ) 1-y In y An As back surface field layer, wherein y<x, 0.1.ltoreq.g.ltoreq.0.6, wherein the n-Ga 1-x In x The doping agent of the As emitting region layer is Si, se or Te, and the doping concentration is 1×10 17 -1×10 19 cm -3 The thickness range is 10-200nm; the p-Ga 1--x In x The doping agent of the As base region layer is Zn, mg or C, and the doping concentration is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 100-3000 nm; the n-Ga 1-z In z The P window layer has a doping agent of Si, se or Te with a doping concentration of 5×10 17 -1×10 220 cm -3 The thickness range is 10-200nm; the p- (Al) g Ga 1-g ) 1-y In y The doping agent of the As back surface field layer is Zn, mg or C, and the doping concentration is 5 multiplied by 10 17 -1×10 20 cm -3 The thickness is in the range of 10-200nm.
The Ga 1-x In x The thickness of the As sub-cell is between 0.8 and 2.0 um.
The thickness of the back surface field layer and the window layer is in the range of 30-100 nm.
In a space radiation environment, high-energy particles bombard a solar cell semiconductor material lattice, atoms are displaced, and point defects are formed. Part of point defects introduce new energy levels in the forbidden band of the material, causing non-radiative recombination enhancement and resulting in degradation of battery performance. The number of defects generated is related to both the incident particle energy and species and the atomic potential function in the material. By applying compressive stress in the material, the atomic distance is reduced, so that the atomic displacement threshold is increased, defects are more difficult to form, the defect concentration is reduced, and the radiation resistance is improved.
In germanium-based triple junction cells, inGaAs is the weak link to its radiation resistance. The present invention thus applies compressive stress to the emitter and base regions of the InGaAs cell. The method is realized by the following two methods:
(1) A graded buffer layer structure with low relaxation degree is adopted, so that the InGaAs material is provided with compressive stress;
(2) The window layer and the back field layer with small lattice constants are adopted to increase the compressive stress of the InGaAs material;
in order to ensure that the cell performance does not significantly deteriorate under compressive stress, the total thickness of InGaAs must be less than the critical thickness h c ，h c The following formula is given by calculation:
if h c Below 1.2 microns, the DBR structure needs to be added below the InGaAs subcells. DBR structures are well known techniques.
Critical thickness dc. set for x% calculated relaxationIn meter x Ga 1-x The thickness of the As sub-cell is y dc, and the value of y is 0.8-0.95.
If dc is less than 1.2 microns, then In x Ga 1-x Al is required to be added below the As sub-cell x Ga y In 1-x-y As/Al z Ga w In 1-z-w As DBR structure.
In x Ga 1-x The back surface field of the As sub-cell is AlGaInAs, and the window layer is GaInP. The back surface field layer and the window layer have lattice constants smaller than In x Ga 1-x An As sub-cell. The thickness of the two layers is in the range of 30-100 nm.
In x Ga 1-x Above the As sub-cell is an AlGaInP sub-cell having a lattice constant not smaller than In x Ga 1-x An As sub-cell. The thickness dt of an AlGaInP subcell, dt, is determined by the following principle: alGaInP subcell current approximately equal to 0.90-0.99 x In x Ga 1- x As subcell current.
Placing germanium substrate into MOCVD chamber, pre-passing PH at 700-800 deg.C 3 Forming an n-Ge layer 2 on a p-Ge substrate 1 through a diffusion process, wherein the thickness of the n-Ge layer is 50-100nm;
Ga 0.5 In 0.5 the P window layer 3, the n-type dopant of which is Si, se or Te, the growth temperature is 500-700 ℃ and the thickness range is 10-500nm;
Al a Ga b In c an As graded buffer layer 4 in which a+b+c=1, the composition c of in is graded from 0 to x from the initial layer to the target graded layer, and an n-type dopant is used at a doping concentration of 1×10 17 -1×10 19 cm -3 The thickness range is 1000-5000nm, and the growth temperature is 500-700 ℃.
A second tunnel junction 5 comprising n-doped n ++ GaAs layer and p-doped p ++ -Al g Ga 1-g An As layer, wherein n ++ The doping agent of the GaAs layer is Si, se or Te with doping concentration of 1×10 19 -1×10 21 cm -3 The thickness range is 10-100nm, and the growth temperature is 500-700 ℃; wherein p is ++ -Al g Ga 1-g The As layer has a doping agent of Zn, mg or C with a doping concentration of 1×10 19 -1×10 21 cm -3 G is more than or equal to 0.1 and less than or equal to 0.6, the thickness range is 10-100nm, and the growth temperature is 500-700 ℃;
Ga 1-x In x as cells (6-9) comprising n-Ga doped n-type 1-x In x As emitter layer 8 and p-doped p-Ga 1- x In x An As base region layer 7, wherein x is more than or equal to 0.06 and less than or equal to 0.7; comprising n-doped Ga 1-z In z A P (0.5.ltoreq.z.ltoreq.1.0) window layer 9 and P-type doped (Al g Ga 1-g ) 1-y In y An As back surface field layer 6, where y<x is more than or equal to 0.1 and less than or equal to 0.6. Wherein said n-Ga 1-x In x The doping agent of the As emitting region layer is Si, se or Te, and the doping concentration is 1×10 17 -1×10 19 cm -3 The thickness range is 10-200nm, and the growth temperature is 600-800 ℃; the p-Ga 1-x In x The doping agent of the As base region layer is Zn, mg or C, and the doping concentration is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 100-3000nm, and the growth temperature is 600-800 ℃; the n-Ga 1-z In z The P window layer has a doping agent of Si, se or Te with a doping concentration of 5×10 17 -1×10 20 cm -3 The thickness range is 10-200nm, and the growth temperature is 600-800 ℃; the p- (Al) g Ga 1-g ) 1-y In y The doping agent of the As back surface field layer is Zn, mg or C, and the doping concentration is 5 multiplied by 10 17 -1×10 20 cm -3 The thickness range is 10-200nm, and the growth temperature is 600-800 ℃;
a first tunnel junction including n-type doped n ++ -Ga 1-y In y P-layer and P-doped P ++ -(Al e Ga 1-e ) 1-x In x An As layer, wherein z<And y. Wherein said n ++ -Ga 1-y In y The P layer has a doping agent of Si, se or Te with a doping concentration of 1×10 19 -1×10 21 cm -3 Y is more than or equal to 0.4 and less than or equal to 0.9, the thickness range is 10-100nm, and the growth temperature is 500-700 ℃; the p is +++ -(Al e Ga 1-e ) 1- x In x The As layer has a doping agent of Zn, mg or C with a doping concentration of 1×10 19 -1×10 21 cm -3 E is more than or equal to 0.1 and less than or equal to 0.6, x is more than or equal to 0.01 and less than or equal to 0.6, the thickness range is 10-100nm, and the growth temperature is 500-700 ℃;
(Al f Ga 1-f ) 1-y In y p-cell comprising n- (Al) doped n-type f Ga 1-f ) 1-y In y P emitter layer and P-doped P- (Al) f Ga 1-f ) 1-y In y The P base region layer, wherein f is more than or equal to 0.1 and less than or equal to 0.6, and y is more than or equal to 0.4 and less than or equal to 0.9; wherein said n- (Al) f Ga 1-f ) 1-y In y The P emitting region layer has a doping agent of Si, se or Te with a doping concentration of 1×10 17 -1×10 19 cm -3 The thickness range is 10-200nm, and the growth temperature is 600-800 ℃; the p- (Al) f Ga 1-f ) 1-y In y The doping agent of the P base region layer is Zn, mg or C, and the doping concentration is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 10-3000nm, and the growth temperature is 600-800 ℃;
the cap layer is n-doped n + -Ga 1-x In x As, wherein x is more than or equal to 0.06 and less than or equal to 0.7, the doping agent is Si, se or Te, and the doping concentration is 1 multiplied by 10 18 -1×10 20 cm -3 The thickness range is 10-800nm, and the growth temperature is 550-800 ℃.
The total time required for the growth of the above-mentioned materials is 3.5-7 hours, and then the device process is completely the same as that of the current forward three-junction solar cell, and the upper electrode 16, the lower electrode 17 and the antireflection film 18 are sequentially prepared, which is a well-known technology.
For further explanation of the content, features and efficacy of the present invention, the following examples are set forth in detail below, with reference to the accompanying drawings:
and (3) an AlGaInAs graded buffer layer and an overshoot layer are epitaxially grown on the germanium substrate, and the lattice mismatch degree of the InGaAs is controlled to be 0.02% by adjusting an epitaxial process.
The critical thickness hc=1160 nm at a relaxation of 0.02% was calculated according to formula (1). Design of In x Ga 1-x The thickness of the As sub-cell was 1100nm (y takes a value of 0.95).
Due to the thickness of less than 1.2 micrometers, in x Ga 1-x Al is required to be added below the As sub-cell x Ga y In 1-x-y As/Al z Ga w In 1-z-w As DBR structure.
The preparation process is as follows:
placing germanium substrate into MOCVD chamber, pre-passing PH at 700-800 deg.C 3 Forming an n-Ge layer 2 on a p-Ge substrate 1 through a diffusion process, wherein the thickness of the n-Ge layer is 50-100nm;
Ga 0.5 In 0.5 the P window layer 3, the n-type dopant of which is Si, se or Te, the growth temperature is 500-700 ℃ and the thickness range is 10-500nm;
Al a Ga b In c an As graded buffer layer 4 in which a+b+c=1, the composition c of in is graded from 0 to x from the initial layer to the target graded layer, and an n-type dopant is used at a doping concentration of 1×10 17 -1×10 19 cm -3 The thickness range is 1000-5000nm, and the growth temperature is 500-700 ℃.
A second tunnel junction 5 comprising n-doped n ++ GaAs layer and p-doped p ++ -Al g Ga 1-g An As layer, wherein n ++ The doping agent of the GaAs layer is Si, se or Te with doping concentration of 1×10 19 -1×10 21 cm -3 The thickness range is 10-100nm, and the growth temperature is 500-700 ℃; wherein p is ++ -Al g Ga 1-g The As layer has a doping agent of Zn, mg or C with a doping concentration of 1×10 19 -1×10 21 cm -3 G is more than or equal to 0.1 and less than or equal to 0.6, the thickness range is 10-100nm, and the growth temperature is 500-700 ℃;
the DBR of the grown Bragg reflector is (Al c Ga 1-c ) 1-x In x As/(Al d Ga 1-d ) 1-x In x As DBR, wherein 0.ltoreq.c.ltoreq.0.5, 0.5.ltoreq.d.ltoreq.1, and 0.1.ltoreq.x.ltoreq.0.5, using p-type dopant at a doping concentration of 1X 10 17 -1×10 19 cm -3 The thickness is 1000-4000nm, the number of cycles is 10-30, and the number of (Al) is in each cycle c Ga 1-c ) 1-x In x As has a thickness in the range of 20-200nm, (Al) d Ga 1-d ) 1-x In x As has a thickness in the range of 20-200nm.
Ga 1-x In x As cells (6-9) comprising n-Ga doped n-type 1-x In x As emitter layer 8 and p-doped p-Ga 1- x In x An As base region layer 7, wherein x is more than or equal to 0.06 and less than or equal to 0.7; comprising n-doped Ga 1-z In z P-window layer 9 and P-doped (Al g Ga 1-g ) 1-y In y An As back surface field layer 6, where y<x is more than or equal to 0.1 and less than or equal to 0.6. Wherein said n-Ga 1-x In x The doping agent of the As emitting region layer is Si, se or Te, and the doping concentration is 1×10 17 -1×10 19 cm -3 The thickness range is 10-200nm, and the growth temperature is 600-800 ℃; the p-Ga 1-x In x The doping agent of the As base region layer is Zn, mg or C, and the doping concentration is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 100-3000nm, and the growth temperature is 600-800 ℃; the n-Ga 1-z In z The P window layer has a doping agent of Si, se or Te with a doping concentration of 5×10 17 -1×10 20 cm -3 The thickness range is 10-200nm, and the growth temperature is 600-800 ℃; the p- (Al) g Ga 1-g ) 1-y In y The doping agent of the As back surface field layer is Zn, mg or C, and the doping concentration is 5 multiplied by 10 17 -1×10 20 cm -3 The thickness range is 10-200nm, and the growth temperature is 600-800 ℃;
a first tunnel junction including n-type doped n ++ -Ga 1-y In y P-layer and P-doped P ++ -(Al e Ga 1-e ) 1-x In x An As layer, wherein z<And y. Wherein said n ++ -Ga 1-y In y The P layer has a doping agent of Si, se or Te with a doping concentration of 1×10 19 -1×10 21 cm -3 Y is more than or equal to 0.4 and less than or equal to 0.9, the thickness range is 10-100nm, and the growth temperature is 500-700 ℃; the p is +++ -(Al e Ga 1-e ) 1- x In x The As layer has a doping agent of Zn, mg or C with a doping concentration of 1×10 19 -1×10 21 cm -3 E is more than or equal to 0.1 and less than or equal to 0.6, x is more than or equal to 0.01 and less than or equal to 0.6, the thickness range is 10-100nm,the growth temperature is 500-700 ℃;
(Al f Ga 1-f ) 1-y In y p-cell comprising n- (Al) doped n-type f Ga 1-f ) 1-y In y P emitter layer and P-doped P- (Al) f Ga 1-f ) 1-y In y The P base region layer, wherein f is more than or equal to 0.1 and less than or equal to 0.6, and y is more than or equal to 0.4 and less than or equal to 0.9; wherein said n- (Al) f Ga 1-f ) 1-y In y The P emitting region layer has a doping agent of Si, se or Te with a doping concentration of 1×10 17 -1×10 19 cm -3 The thickness range is 10-200nm, and the growth temperature is 600-800 ℃; the p- (Al) f Ga 1-f ) 1-y In y The doping agent of the P base region layer is Zn, mg or C, and the doping concentration is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 10-3000nm, and the growth temperature is 600-800 ℃;
the cap layer is n-doped n + -Ga 1-x In x As, wherein x is more than or equal to 0.06 and less than or equal to 0.7, the doping agent is Si, se or Te, and the doping concentration is 1 multiplied by 10 18 -1×10 20 cm -3 The thickness range is 10-800nm, and the growth temperature is 550-800 ℃.
And then performing a device process according to the forward three-junction battery, which is a known technology. Above the battery is Al 2 O 3 /TiO 2 Or Al 2 O 3 ZnS antireflection film.
The curves for the examples are shown in figure 2.
The above-described embodiments are only for illustrating the technical spirit and features of the present invention, and it is intended that those skilled in the art can understand the content of the present invention and implement it accordingly, and the scope of the present invention is not limited to the embodiments, i.e., equivalent changes or modifications to the spirit of the present invention are included in the scope of the present invention.

Claims (4)

1. A positive mismatch solar cell realizing strong radiation resistance by using lattice compressive stress is characterized in that, comprises a bottom electrode, a top electrode, a bottom electrode, a top Ge sub-cell, gaInP window layer,Graded buffer layer, second tunnel junction, gaInAs subcell, first tunnel junction, alGaInP subcell, gaAs contact layer, upper electrode and antireflection film, ga 1-x In x The relaxation degree of the As sub-cell is 80-99.99%, ga 1-x In x The back surface field of the As sub-cell is AlGaInAs, the window layer is GaInP, and lattice constants of the back surface field layer and the window layer are smaller than Ga 1-x In x An As sub-cell; above the GaInAs subcell is an AlGaInP subcell having a lattice constant not less than that of the GaInAs subcell.
2. The positive mismatch solar cell achieving strong radiation resistance using lattice compressive stress according to claim 1, wherein the Ga 1-x In x As cell comprising n-Ga doped n-type 1-x In x As emitter layer and p-type doped p-Ga 1-x In x An As base region layer, wherein x is more than or equal to 0.06 and less than or equal to 0.7; comprising n-doped Ga 1-z In z P-window layer and P-doped (Al g Ga 1-g ) 1-y In y An As back surface field layer, wherein y<x, 0.1.ltoreq.g.ltoreq.0.6, wherein the n-Ga 1-x In x The doping agent of the As emitting region layer is Si, se or Te, and the doping concentration is 1×10 17 -1×10 19 cm -3 The thickness range is 10-200nm; the p-Ga 1-x In x The doping agent of the As base region layer is Zn, mg or C, and the doping concentration is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 100-3000 nm; the n-Ga 1-z In z The P window layer has a doping agent of Si, se or Te with a doping concentration of 5×10 17 -1×10 20 cm -3 The thickness range is 10-200nm; the p- (Al) g Ga 1-g ) 1-y In y The doping agent of the As back surface field layer is Zn, mg or C, and the doping concentration is 5 multiplied by 10 17 -1×10 20 cm -3 The thickness is in the range of 10-200nm.
3. The positive mismatch solar cell achieving strong radiation resistance using lattice compressive stress according to claim 1, wherein the Ga 1-x In x Thickness of As sub-cellThe degree is between 0.8 and 2.0 um.
4. The solar cell of claim 1, wherein the back surface field layer and the window layer have thicknesses in the range of 30-100 nm.
CN202310980783.3A 2023-08-04 2023-08-04 Forward mismatch solar cell realizing strong radiation resistance by using lattice compressive stress Pending CN117153915A (en)

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