CN117116760A - Silicon carbide device manufacturing method and silicon carbide device - Google Patents
Silicon carbide device manufacturing method and silicon carbide device Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
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- 239000002184 metal Substances 0.000 claims abstract description 127
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 44
- 238000002360 preparation method Methods 0.000 claims abstract description 41
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 23
- 230000003647 oxidation Effects 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 309
- 238000002161 passivation Methods 0.000 claims description 31
- 238000005468 ion implantation Methods 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 12
- 230000004913 activation Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 description 17
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
The invention provides a manufacturing method of a silicon carbide device and the silicon carbide device, wherein the method comprises the following steps: step S1: providing a substrate and forming an epitaxial layer on the exposed surface of the substrate; step S2: forming a doped part on the epitaxial layer at a part between the substrate and the groove; step S3: forming a side wall structure on the side wall of the groove, and forming a first preparation metal layer on the exposed surface of the doping part and the exposed surface of the side wall structure; step S4: annealing the first preparation metal layer to generate an ohmic contact metal part; step S5: forming an oxidation part on the first part of the exposed surface of the structure formed in the step S4, and forming a Schottky contact metal layer on the second part of the exposed surface of the structure formed in the step S4 and at least part of the exposed surface of the oxidation part; step S6: an electrode layer is formed on the exposed surface of the schottky contact metal layer on the side remote from the substrate. The method solves the problem of high conduction voltage drop of the silicon carbide device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a silicon carbide device and the silicon carbide device.
Background
Compared with the traditional Si device, the SiC device has the characteristics of high voltage, high frequency, high working withstand voltage and the like, and comprises a SiC Schottky barrier diode (Schottky Barrier Diode, simply referred to as SBD), a SiC junction barrier Schottky (Junction Barrier Schottky, simply referred to as JBS), a SiC merging pin Schottky (Merge PIN Schottky, simply referred to as MPS) and the like, wherein the forward conduction voltage of the SiC SBD is low, the working frequency is high, but the reverse blocking characteristic is poor; the SiC JBS improves the structure of the SiC SBD, P-type injection is added on the basis of the SBD, the reverse blocking capacity can be greatly improved by adjusting the proportion of the injection area to the non-injection area, but the surge capacity of the JBS is relatively poor, and the specific application environment cannot be met in some application fields; MPS was modified on the basis of JBS and ohmic contacts were formed on top of the P-type implant regions. Under the condition of large current, the Pin diode is turned on, and the surge capacity is improved. However, due to the limitations of photolithography and etching processes, ohmic contacts are created through the relatively narrow P-implant regions, and the process window is relatively small. In the prior art, the area of a part of the P injection region is generally increased, and ohmic contact is formed only in the increased P injection region, however, the area of the schottky contact is reduced by the method, so that the on-state voltage drop of the MPS device is increased.
Therefore, a method for manufacturing a silicon carbide device is needed to solve the problem of the increase of the on-voltage drop of the silicon carbide device caused by the reduction of the schottky contact area.
Disclosure of Invention
The invention mainly aims to provide a manufacturing method of a silicon carbide device and the silicon carbide device, which are used for solving the problem that the conduction voltage drop of the silicon carbide device is increased due to the reduction of the Schottky contact area in the prior art.
In order to achieve the above object, according to one aspect of the present invention, there is provided a method of manufacturing a silicon carbide device, comprising: step S1: providing a substrate, and forming an epitaxial layer on the exposed surface of the substrate, wherein the epitaxial layer is provided with a plurality of grooves which are arranged at intervals; step S2: ion implantation is carried out on the epitaxial layer from one side of the groove away from the substrate, and a doping part is formed on the epitaxial layer at the part between the substrate and the groove, wherein the doping type of the doping part is different from that of the substrate; step S3: forming a side wall structure on the side wall of the groove, and forming a first preparation metal layer on the exposed surface of the doping part and the exposed surface of the side wall structure; step S4: annealing the first preparation metal layer to enable part of the first preparation metal layer to react with the doped part to generate an ohmic contact metal part, and removing the side wall structure and the first preparation metal layer on the surface of the side wall structure; step S5: forming an oxidation part on a first part of exposed surface of the structure formed in the step S4, forming a Schottky contact metal layer on a second part of exposed surface of the structure formed in the step S4 and at least part of exposed surface of the oxidation part, wherein the first part of exposed surface is positioned on two sides of the second part of exposed surface, and the first part of exposed surface and the second part of exposed surface respectively comprise at least one groove; step S6: and forming an electrode layer on the exposed surface of the Schottky contact metal layer on the side far away from the substrate.
Optionally, forming a sidewall structure on a sidewall of the groove includes: forming a first oxide layer on the exposed surface of the structure formed in the step S2; and removing part of the first oxide layer on the surface of the doped part so as to expose part of the surface of the doped part, wherein the rest of the first oxide layer on the side wall of the groove is the side wall structure.
Optionally, forming an oxide portion on the exposed surface of the first portion of the structure formed in the step S4 includes: forming a second oxide layer on the exposed surface of the structure formed in the step S4; and removing the second oxide layer on the surface of the second part of the structure formed in the step S4, and forming the oxidation part by the rest second oxide layer.
Optionally, forming a schottky contact metal layer on the second portion of the exposed surface of the structure formed in the step S4 and on at least a portion of the exposed surface of the oxidized portion, including: forming a second preliminary metal layer on the exposed surface of the second portion of the structure formed in the step S4 and on the exposed surface of the oxidized portion; and removing the second preparation metal layer on part of the surface of the oxidation part, reserving the second preparation metal layer on the first preset part surface of the oxidation part, and forming the Schottky contact metal layer by the rest second preparation metal layer, wherein the first preset part surface is positioned on the periphery of the exposed surface of the second part of the structure formed in the step S4.
Optionally, forming an epitaxial layer on the exposed surface of the substrate, including: forming a preliminary epitaxial layer on the exposed surface of the substrate; and removing part of the preparation epitaxial layer to form a plurality of grooves, and forming the epitaxial layer by the rest of the preparation epitaxial layer.
Optionally, step S2 includes: step S21: ion implantation is carried out on the epitaxial layer from one side of the groove away from the substrate, and a preparation doping part is formed on the epitaxial layer between the substrate and the groove; step S22: forming a protective layer on the exposed surface of the structure formed in the step S21; step S23: performing activation treatment on the preparation doped part to form the doped part; step S24: and removing the protective layer.
Optionally, step S6 includes: forming a preliminary electrode layer on the exposed surface of the structure formed in the step S5; and removing the preparation electrode layer on the partial surface of the Schottky contact metal layer, reserving the preparation electrode layer on the second preset partial surface of the Schottky contact metal layer, and forming the electrode layer by the rest preparation electrode layer, wherein the second preset partial surface is positioned on the periphery of the exposed surface of the second part of the structure formed in the step S4.
Optionally, after step S6, the method further includes: an ohmic contact metal layer is formed on a surface of the substrate on a side away from the epitaxial layer.
Optionally, after step S6, the method further includes: forming a passivation layer on the exposed surface of the structure formed in the step S6; and removing the passivation layer on part of the surface of the electrode layer, reserving the passivation layer on the surface of a third preset part of the electrode layer, wherein the rest passivation layer forms a passivation part, and the surface of the third preset part is positioned on the periphery of the exposed surface of the second part of the structure formed in the step S4.
In order to achieve the above object, according to one aspect of the present invention, there is provided a silicon carbide device comprising: the silicon carbide device is manufactured by adopting any one of the manufacturing methods.
By applying the technical scheme of the invention, the invention provides a manufacturing method of a silicon carbide device, which comprises the following steps of S1: providing a substrate, and forming an epitaxial layer with grooves arranged at intervals on the exposed surface of the substrate; step S2: ion implantation is carried out on the epitaxial layer from one side of the groove away from the substrate, and a doped part is formed on the epitaxial layer at the part between the substrate and the groove; step S3: forming a side wall structure on the side wall of the groove, and forming a first preparation metal layer on the exposed surface of the doping part and the exposed surface of the side wall structure; step S4: annealing the first preparation metal layer to enable part of the first preparation metal layer to react with the doped part so as to generate an ohmic contact metal part; step S5: forming an oxidation part on the first part of the exposed surface of the structure formed in the step S4, and forming a Schottky contact metal layer on the second part of the exposed surface of the structure formed in the step S4 and at least part of the exposed surface of the oxidation part; step S6: an electrode layer is formed on the exposed surface of the schottky contact metal layer on the side remote from the substrate. According to the manufacturing method of the silicon carbide device, the ohmic contact formed by photoetching alignment in the prior art is replaced by forming the side wall structure firstly, then the ohmic contact is formed by performing self-aligned deposition on ohmic metal, the influence of the increase of the area of the P-type injection region is eliminated, the Schottky contact area is not reduced, compared with the prior art, the generated ohmic contact area is large, the rise of conduction voltage drop can be prevented, and the technical problems that the ohmic contact is formed by photoetching alignment in the silicon carbide device in the prior art, the area of the P-type injection region is increased, the area of the Schottky contact is reduced and the conduction voltage drop is increased due to the process limit of photoetching alignment are solved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention. In the drawings:
FIG. 1 illustrates a flow diagram of a method of fabricating a silicon carbide device according to an embodiment of the present invention;
fig. 2 shows a schematic structural diagram of a substrate and an epitaxial layer according to an embodiment of the present invention;
fig. 3 shows a schematic structural diagram of the formation of the doping on the basis of fig. 2;
fig. 4 shows a schematic structural diagram of forming a sidewall structure and a first preliminary metal layer on the basis of fig. 3;
fig. 5 is a schematic view showing a structure of forming an ohmic contact metal portion on the basis of fig. 4;
fig. 6 is a schematic diagram showing the structure of forming an oxide portion and a schottky contact metal layer on the basis of fig. 5;
fig. 7 shows a schematic view of a structure in which an electrode layer is formed on the basis of fig. 6;
fig. 8 shows a schematic structure of forming a first oxide layer on the basis of fig. 3;
fig. 9 shows a schematic structural diagram of forming a sidewall structure on the basis of fig. 3;
fig. 10 shows a schematic structural diagram of forming a second oxide layer on the basis of fig. 3;
Fig. 11 is a schematic view showing a structure of forming an oxidized portion on the basis of fig. 3;
fig. 12 is a schematic view showing a structure of forming a second preliminary metal layer on the basis of fig. 11;
fig. 13 shows a schematic structural view of a substrate and a preliminary epitaxial layer according to an embodiment of the present invention;
fig. 14 shows a schematic structural view of forming a preliminary doping portion and a protective layer on the basis of fig. 2;
fig. 15 shows a schematic structural view of forming a preliminary electrode layer on the basis of fig. 6;
fig. 16 is a schematic view showing a structure of forming an ohmic contact metal layer on the basis of fig. 7;
fig. 17 shows a schematic structure of forming a passivation portion on the basis of fig. 7.
Wherein the above figures include the following reference numerals:
100. a substrate; 101. an epitaxial layer; 102. a groove; 103. a doping section; 104. a side wall structure; 105. a first preliminary metal layer; 106. ohmic contact metal part; 107. an oxidation section; 108. a schottky contact metal layer; 109. an electrode layer; 110. a first oxide layer; 111. a second oxide layer; 112. a second preliminary metal layer; 113. preparing an epitaxial layer; 114. preparing a doping part; 115. a protective layer; 116. preparing an electrode layer; 117. ohmic contact metal layer; 118. and a passivation part.
Detailed Description
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As described in the background art, in order to solve the above-mentioned problems, in an exemplary embodiment of the present application, a method for manufacturing a silicon carbide device and a silicon carbide device are provided.
According to an embodiment of the application, a method for manufacturing a silicon carbide device is provided.
Fig. 1 is a flow chart of a method of fabricating a silicon carbide device according to an embodiment of the present application. As shown in fig. 1, the method comprises the steps of:
step S1: providing a substrate 100, and forming an epitaxial layer 101 on the exposed surface of the substrate 100, wherein the epitaxial layer 101 is provided with a plurality of grooves 102 which are arranged at intervals, so as to obtain a structure shown in fig. 2;
in the steps, the substrate is made of silicon carbide material, and the silicon carbide substrate has excellent thermal conductivity, high temperature resistance and mechanical strength, and is suitable for application in high-power, high-frequency and high-temperature environments. In addition, the silicon carbide substrate also has lower leakage current and higher breakdown voltage, and can provide better electrical performance. The epitaxial layer can be formed on the substrate by a chemical vapor deposition method, and the thickness of the epitaxial layer ranges from 5 mu m to 100 mu m. Then, the epitaxial layer with the grooves can be formed by depositing a hard mask layer and then etching, and the number of the grooves is not limited, and the grooves can be one or a plurality of grooves.
Step S2: ion implanting the epitaxial layer 101 from a side of the recess 102 away from the substrate 100, forming a doped portion 103 in the epitaxial layer 101 at a portion between the substrate 100 and the recess 102, wherein a doping type of the doped portion 103 is different from a doping type of the substrate 100, and a structure shown in fig. 3 is obtained;
in the above steps, during ion implantation, a beam of high-energy ions is first generated, the ions are accelerated to a high speed by an ion source (such as an ion accelerator), and the direction and intensity of the ion beam are controlled by an electric field or a magnetic field, so that the ion beam interacts with atoms or molecules of a solid when entering the solid material, and the interactions can change physical properties or chemical properties of the material. The hard mask used for forming the groove by etching is the hard mask used in the ion implantation process. In addition, the depth of the ion implantation into the epitaxial layer is not limited. When the doping type of the substrate is P-type, the doping type of the doping part is N-type, and when the doping type of the substrate is N-type, the doping type of the doping part is P-type.
Step S3: forming a side wall structure 104 on the side wall of the groove 102, and forming a first preparation metal layer 105 on the exposed surface of the doped part 103 and the exposed surface of the side wall structure 104 to obtain a structure shown in fig. 4;
In the above steps, the sidewall structure is formed by using a sidewall process, and the sidewall process uses the anisotropic property of dry etching, and does not need mask and dry etching after deposition to form the sidewall structure at the step position. And the consistency of the side wall structure can be ensured by performing a dielectric deposition self-alignment process. The material of the sidewall structure may be silicon oxide, and the sidewall structure should have a certain thickness in the process of forming the sidewall structure, but the thickness of the sidewall structure is not further limited. The material of the first preliminary metal layer may be a metal with low resistivity such as copper, aluminum, iron, silver, gold, and nickel.
Step S4: annealing the first preliminary metal layer 105 to react a portion of the first preliminary metal layer 105 with the doped portion 103 to generate an ohmic contact metal portion 106, and removing the sidewall structure 104 and the first preliminary metal layer 105 on the surface of the sidewall structure 104, thereby obtaining a structure as shown in fig. 5;
in the step, the first preliminary metal oxide does not react with the sidewall structure during the annealing process, but reacts with the doped portion to form an ohmic contact metal portion. The ohmic contact metal portion can form good electrical contact with the doped portion, and current can be freely transferred through the contact. In ohmic contact, the current increases linearly with increasing voltage, conforming to ohm's law. In addition, wet etching may be used to remove the sidewall structure and the first preliminary metal layer that does not react with the doped portion.
Step S5: forming an oxide part 107 on a first part of the exposed surface of the structure formed in the step S4, forming a schottky contact metal layer 108 on a second part of the exposed surface of the structure formed in the step S4 and on at least part of the exposed surface of the oxide part 107, wherein the first part of the exposed surface is located at two sides of the second part of the exposed surface, and the first part of the exposed surface and the second part of the exposed surface respectively comprise at least one groove, so as to obtain the structure shown in fig. 6;
in the above step, the schottky contact metal layer may form schottky contact with the epitaxial layer, and a schottky barrier that blocks a flow of current is formed due to a difference in energy band structure between materials. When a forward bias voltage is applied, a current capable of overcoming the schottky barrier starts to flow, but when a reverse bias voltage is applied, a current hardly passes due to an increase in the barrier. Thus, schottky contacts generally exhibit non-linear current and voltage characteristics. The oxide portion is used for isolating contact between the Schottky contact metal layer and the epitaxial layer.
Step S6: an electrode layer 109 is formed on the exposed surface of the schottky contact metal layer 108 on the side away from the substrate 100, resulting in the structure shown in fig. 7.
In the above step, the material of the electrode layer may be a metal material such as copper, silver, gold, or aluminum. In the actual manufacturing process, the deposition of the schottky contact metal layer and the electrode layer may be performed together.
In an embodiment of the present invention, a method for manufacturing a silicon carbide device is provided, including step S1: providing a substrate, and forming an epitaxial layer with grooves arranged at intervals on the exposed surface of the substrate; step S2: ion implantation is carried out on the epitaxial layer from one side of the groove away from the substrate, and a doped part is formed on the epitaxial layer at the part between the substrate and the groove; step S3: forming a side wall structure on the side wall of the groove, and forming a first preparation metal layer on the exposed surface of the doping part and the exposed surface of the side wall structure; step S4: annealing the first preparation metal layer to enable part of the first preparation metal layer to react with the doped part so as to generate an ohmic contact metal part; step S5: forming an oxidation part on the first part of the exposed surface of the structure formed in the step S4, and forming a Schottky contact metal layer on the second part of the exposed surface of the structure formed in the step S4 and at least part of the exposed surface of the oxidation part; step S6: an electrode layer is formed on the exposed surface of the schottky contact metal layer on the side remote from the substrate. According to the manufacturing method of the silicon carbide device, the ohmic contact formed by photoetching alignment in the prior art is replaced by forming the side wall structure firstly, then the ohmic contact is formed by performing self-aligned deposition on ohmic metal, the influence of the increase of the area of the P-type injection region is eliminated, the Schottky contact area is not reduced, compared with the prior art, the generated ohmic contact area is large, the rise of conduction voltage drop can be prevented, and the technical problems that the ohmic contact is formed by photoetching alignment in the silicon carbide device in the prior art, the area of the P-type injection region is increased, the area of the Schottky contact is reduced and the conduction voltage drop is increased due to the process limit of photoetching alignment are solved.
In a specific embodiment of the present application, the step of forming a sidewall structure on the sidewall of the groove includes: forming a first oxide layer 110 on the exposed surface of the structure formed in the step S2, to form a structure as shown in fig. 8; part of the first oxide layer 110 on the surface of the doped portion 103 is removed, so that part of the surface of the doped portion 103 is exposed, and the rest of the first oxide layer 110 on the sidewall of the recess 102 is the sidewall structure 104, so as to obtain a structure as shown in fig. 9. In the step, the sidewall structure can be further rapidly formed by forming the first oxide layer and removing the first oxide layer on the surface of the doped portion.
Specifically, the material of the first oxide layer may be silicon oxide. Etching may be used to remove a portion of the first oxide layer on the surface of the doped portion. Further, etching the sidewall of the sidewall structure, which is generally horizontal, may also suffer from a loss, which is related to the etching equipment capability. The side wall structure formed by the steps can be the situation that the side wall structure on the surface of the epitaxial layer is etched completely and only the side wall is left; the side wall structure on the surface of the epitaxial layer can also be completely etched, and the side wall structure exists on the surfaces of the side wall and the epitaxial layer.
In still another specific embodiment of the present application, the step of forming the oxidized portion on the exposed surface of the first portion of the structure formed in the step S4 includes: forming a second oxide layer 111 on the exposed surface of the structure formed in the step S4, to obtain a structure as shown in fig. 10; the second oxide layer 111 on the exposed surface of the second portion of the structure formed in the step S4 is removed, and the remaining second oxide layer 111 forms the oxide portion 107, resulting in the structure shown in fig. 11. The above step can further rapidly form the above oxide portion.
Specifically, in practice, the oxide portion is a field oxide layer, which refers to an insulating layer used to isolate between transistors in the integrated circuit manufacturing process. The field oxide layer may prevent leakage and interference of current between transistors, providing electrical isolation and mechanical support. Meanwhile, the field oxide layer can also be used as a gate insulating layer of the transistor to prevent charge accumulation and electric leakage between the gate and the channel. And removing the second oxide layer on the exposed surface of the second part by utilizing photoetching and wet etching, wherein the material of the second oxide layer is silicon dioxide.
In still another specific embodiment of the present application, the step of forming the schottky contact metal layer on the second partially exposed surface of the structure formed in the step S4 and on at least partially exposed surface of the oxidized portion includes: forming a second preliminary metal layer 112 on the exposed surface of the second portion of the structure formed in the step S4 and on the exposed surface of the oxidized portion 107, to obtain the structure shown in fig. 12; the second preliminary metal layer 112 on a part of the surface of the oxidized portion 107 is removed, the second preliminary metal layer 112 remains on a first predetermined part of the surface of the oxidized portion 107, and the remaining second preliminary metal layer 112 forms the schottky contact metal layer 108, the first predetermined part of the surface being located on the outer periphery of the exposed surface of the second part of the structure formed in the step S4. The step can further rapidly form the Schottky contact metal layer.
Specifically, the material of the second preliminary metal layer may be a metal material such as aluminum, chromium, copper, palladium, titanium, or tungsten. A metal etch may be used to remove a portion of the second preliminary metal layer.
Further, forming an epitaxial layer on the exposed surface of the substrate, including: forming a preliminary epitaxial layer 113 on the exposed surface of the substrate 100 to form a structure as shown in fig. 13; a portion of the preliminary epitaxial layer 113 is removed to form a plurality of the grooves 102, and the remaining preliminary epitaxial layer 113 forms the epitaxial layer 101, resulting in the structure shown in fig. 2. The step can rapidly form the epitaxial layer with the grooves.
Specifically, etching the substrate by using a photoetching mark etching area on the substrate, and leaving a positioning mark on the epitaxial layer, so that the alignment of layers after photoetching is facilitated. In the process of removing part of the preliminary epitaxial layer to form a plurality of grooves, a hard mask layer may be deposited first, and the hard mask layer may be one layer or multiple layers. And etching the hard mask layer by using the photoetching mark groove area, stopping etching the epitaxial layer, adjusting the thickness of the etched epitaxial layer according to actual conditions in the etching process, and removing the hard mask layer.
In another specific embodiment of the present application, step S2 includes: step S21: ion implanting the epitaxial layer 101 from a side of the recess 102 away from the substrate 100, and forming a preliminary doped portion 114 in the epitaxial layer 101 at a portion between the substrate 100 and the recess 102; step S22: forming a protective layer 115 on the exposed surface of the structure formed in the step S21, to obtain a structure shown in fig. 14; step S23: performing activation treatment on the preliminary doped part to form the doped part; step S24: and removing the protective layer. In the above step, by forming a protective layer, the doped portion can be further protected during the high-temperature activation of the preliminary doped portion.
Specifically, the material of the protective layer may be graphene, diamond, carbon nanotube, carbon nanoribbon, carbon nanoparticle, or the like. The activation treatment of the preliminary doping part can be high-temperature activation treatment, the temperature range is 1500-2000 ℃, the high-temperature treatment can promote the diffusion of doping ions in the material, the lattice structure and the electronic structure of the material are changed, and the material after the high-temperature treatment is slowly cooled to room temperature so as to ensure the stability of the lattice structure.
In another specific embodiment of the present application, step S6 includes: forming a preliminary electrode layer 116 on the exposed surface of the structure formed in the above step S5, resulting in the structure shown in fig. 15; the preliminary electrode layer 116 on a part of the surface of the schottky contact metal layer 108 is removed, the preliminary electrode layer 116 remains on a second predetermined part of the surface of the schottky contact metal layer 108, and the remaining preliminary electrode layer 116 forms the electrode layer 109, the second predetermined part being located on the outer periphery of the exposed surface of the second part of the structure formed in the step S4. The above steps can rapidly form the above electrode layer.
Specifically, in the actual manufacturing process, the thickness of the preliminary electrode layer may be increased appropriately so that the thickness of the preliminary electrode layer is greater than the thickness of the schottky contact metal layer. The method can increase the surface area of the electrode, thereby improving the reactivity and electrochemical performance of the electrode, and can also increase the contact area of the electrode and electrolyte, and improve the mass transfer rate between the reactant and the electrode, thereby increasing the reaction rate of the electrode.
Further, after step S6, the method further includes: an ohmic contact metal layer 117 is formed on a surface of the substrate 100 on a side away from the epitaxial layer 101, resulting in the structure shown in fig. 16.
Specifically, the ohmic contact metal layer may serve as another electrode other than the electrode layer.
In other optional embodiments, after step S6, the method further includes: forming a passivation layer on the exposed surface of the structure formed in the step S6; the passivation layer on a part of the surface of the electrode layer 109 is removed, the passivation layer remains on a third predetermined part of the surface of the electrode layer 109, the remaining passivation layer forms a passivation portion 118, and the third predetermined part of the surface is located on the outer periphery of the exposed surface of the second part of the structure formed in the step S4. The step may further prevent the electrode layer from being corroded by forming the passivation layer on the electrode surface.
In particular, the passivation layer on the electrode surface functions to prevent chemical reaction between the electrode and the medium, protecting the electrode from corrosion. The passivation layer forms a stable oxide film on the electrode surface to prevent the electrode surface from being in direct contact with oxygen, water, acid and other substances in the environment, thereby preventing oxidation reaction. Meanwhile, the passivation layer can also increase the stability and durability of the electrode and prolong the service life of the electrode. In some cases, the passivation layer may also alter the electrochemical properties of the electrode to provide a particular electrochemical activity, thereby achieving a particular electrochemical reaction or catalysis.
The embodiment provides a manufacturing method of a silicon carbide device, which comprises the following steps:
step S201: providing a substrate 100, and forming a preliminary epitaxial layer 113 on the exposed surface of the substrate 100 to obtain a structure shown in fig. 13;
step S202: removing part of the preliminary epitaxial layer 113 to form a plurality of grooves 102, and forming the epitaxial layer 101 on the rest of the preliminary epitaxial layer 113 to obtain a structure shown in fig. 2;
step S204: ion implantation is performed on the epitaxial layer 101 from the side of the recess 102 away from the substrate 100, a preliminary doped portion 114 is formed on the epitaxial layer 101 at a portion between the substrate 100 and the recess 102, and a protective layer 115 is formed on the exposed surface of the structure formed in the above step, to obtain a structure as shown in fig. 14;
step S205: performing activation treatment on the preparation doped part to form the doped part, and removing the protective layer to obtain a structure shown in fig. 3;
step S206: forming a first oxide layer 110 on the exposed surface of the structure formed in the above step, forming a structure as shown in fig. 8;
step S207: removing part of the first oxide layer 110 on the surface of the doped portion 103 to expose part of the surface of the doped portion 103, where the remaining first oxide layer 110 forms the sidewall structure 104, so as to obtain a structure as shown in fig. 9;
Step S208: forming a first preliminary metal layer 105 on the exposed surface of the doped portion 103 and the exposed surface of the sidewall structure 104, to obtain a structure as shown in fig. 4;
step S209: annealing the first preliminary metal layer 105 to cause a portion of the first preliminary metal layer 105 to react with the doped portion 103 to form an ohmic contact metal portion 106, and removing the sidewall structure 104 and the first preliminary metal layer 105 that does not react with the doped portion 103 to obtain a structure shown in fig. 5;
step S210: forming a second oxide layer 111 on the exposed surface of the structure formed in the above step, to obtain a structure as shown in fig. 10;
step S211: removing the second oxide layer 111 on the exposed surface of the second portion, and forming the oxide portion 107 on the remaining second oxide layer 111 to obtain a structure shown in fig. 11;
step S212: forming a second preliminary metal layer 112 on the exposed surface of the second portion of the structure formed in the above step and on the exposed surface of the above oxide portion 107, to obtain the structure shown in fig. 12;
step S213: removing a portion of the second preliminary metal layer 112 to expose a first portion of the surface of the oxidized portion 107, where the remaining second preliminary metal layer 112 forms the schottky contact metal layer 108, and the first portion of the surface is located on both sides of the exposed third portion, so as to obtain a structure as shown in fig. 6;
Step S214: forming a preliminary electrode layer 116 on the exposed surface of the structure formed in the above step S5, resulting in the structure shown in fig. 15;
step S215: removing a part of the preliminary electrode layer 116 so as to expose a second part of the surface of the oxidized portion 107, wherein the remaining preliminary electrode layer 116 is the electrode layer, and the second part of the surface is located on both sides of the exposed surface of the third part, thereby obtaining a structure as shown in fig. 7;
step S216: forming an ohmic contact metal layer 117 on a surface of the substrate 100 on a side away from the epitaxial layer 101 to obtain a structure as shown in fig. 16;
step S217: forming a passivation layer on the exposed surface of the structure formed in the above step; a part of the passivation layer is removed to expose a part of the electrode layer 109, and the remaining passivation layer forms a passivation portion 118, resulting in the structure shown in fig. 17.
According to an embodiment of the present application, there is further provided a silicon carbide device manufactured by any one of the above methods, as shown in fig. 7, including:
a substrate 100;
specifically, the substrate is made of silicon carbide material, and the silicon carbide substrate has excellent thermal conductivity, high temperature resistance and mechanical strength, and is suitable for application in high-power, high-frequency and high-temperature environments. In addition, the silicon carbide substrate also has lower leakage current and higher breakdown voltage, and can provide better electrical performance.
An epitaxial layer 101 on a surface of one side of the substrate 100, the epitaxial layer 101 including a body portion and a plurality of doped portions 103 located in the body portion, the doped portions 103 having a doping type different from that of the substrate 100;
specifically, the epitaxial layer may be formed on the substrate by a chemical vapor deposition method, and the thickness of the epitaxial layer ranges from 5 μm to 100 μm. In the ion implantation process, a beam of high-energy ions is first generated, the ions are accelerated to a high speed by an ion source (such as an ion accelerator), the direction and intensity of the ion beam are controlled by an electric field or a magnetic field, and the ion beam interacts with atoms or molecules of a solid when entering the solid material, and the interactions can change the physical property or chemical property of the material and the like. In addition, the depth of the ion implantation into the epitaxial layer is not limited. When the doping type of the substrate is P-type, the doping type of the doping part is N-type, and when the doping type of the substrate is N-type, the doping type of the doping part is P-type.
An ohmic contact metal portion 106 located on a part of the surface of the doped portion 103 on a side away from the substrate 100;
Specifically, the ohmic contact metal portion may be a metal having a low resistivity such as copper, aluminum, iron, silver, gold, or nickel. The ohmic contact metal portion can form good electrical contact with the doped portion, and current can be freely transferred through the contact. In ohmic contact, the current increases linearly with increasing voltage, conforming to ohm's law.
A plurality of oxide portions 107 located on a partial surface of the ohmic contact metal portion 106 on a side away from the epitaxial layer 101 and on a partial surface of the epitaxial layer 101 on a side away from the substrate 100;
specifically, the oxide portion is used to isolate a portion of the schottky contact metal layer from the epitaxial layer.
A schottky contact metal layer 108 that is provided on a part of the surface of the ohmic contact metal portion 106 on the side away from the epitaxial layer 101, on a part of the surface of the epitaxial layer 101 on the side away from the substrate 100, and on a part of the surface of the oxide portion 107 on the side away from the epitaxial layer 101;
specifically, the schottky contact metal layer may form schottky contact with the epitaxial layer, and form a schottky barrier that blocks a flow of current due to a difference in energy band structure between materials. When a forward bias voltage is applied, a current capable of overcoming the schottky barrier starts to flow, but when a reverse bias voltage is applied, a current hardly passes due to an increase in the barrier. Thus, schottky contacts generally exhibit non-linear current and voltage characteristics.
An electrode layer 109 is located on a side of the schottky contact metal layer 108 away from the epitaxial layer 101.
Specifically, the material of the electrode layer may be a metal material such as copper, silver, gold, or aluminum. In the actual manufacturing process, the deposition of the schottky contact metal layer and the electrode layer may be performed together.
Further, as shown in fig. 16, the silicon carbide device further includes: an ohmic contact metal layer 117 is provided on a surface of the substrate 100 on a side remote from the epitaxial layer 101.
Specifically, the ohmic contact metal layer may serve as another electrode other than the electrode layer.
In yet another embodiment, as shown in fig. 17, the silicon carbide device further includes: passivation 118 is provided on a part of the surface of the electrode layer 109 on the side away from the schottky contact metal layer 108 and on a surface of the oxide 107 on the side away from the epitaxial layer 101. The silicon carbide structure may further prevent the electrode layer from being corroded.
In particular, the passivation layer on the electrode surface functions to prevent chemical reaction between the electrode and the medium, protecting the electrode from corrosion. The passivation layer forms a stable oxide film on the electrode surface to prevent the electrode surface from being in direct contact with oxygen, water, acid and other substances in the environment, thereby preventing oxidation reaction. Meanwhile, the passivation layer can also increase the stability and durability of the electrode and prolong the service life of the electrode. In some cases, the passivation layer may also alter the electrochemical properties of the electrode to provide a particular electrochemical activity, thereby achieving a particular electrochemical reaction or catalysis.
From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:
1) The manufacturing method of the silicon carbide device comprises the following steps of S1: providing a substrate, and forming an epitaxial layer with grooves arranged at intervals on the exposed surface of the substrate; step S2: ion implantation is carried out on the epitaxial layer from one side of the groove away from the substrate, and a doped part is formed on the epitaxial layer at the part between the substrate and the groove; step S3: forming a side wall structure on the side wall of the groove, and forming a first preparation metal layer on the exposed surface of the doping part and the exposed surface of the side wall structure; step S4: annealing the first preparation metal layer to enable part of the first preparation metal layer to react with the doped part so as to generate an ohmic contact metal part; step S5: forming an oxidation part on the first part of the exposed surface of the structure formed in the step S4, and forming a Schottky contact metal layer on the second part of the exposed surface of the structure formed in the step S4 and at least part of the exposed surface of the oxidation part; step S6: an electrode layer is formed on the exposed surface of the schottky contact metal layer on the side remote from the substrate. According to the manufacturing method of the silicon carbide device, the ohmic contact formed by photoetching alignment in the prior art is replaced by forming the side wall structure firstly, then the ohmic contact is formed by performing self-aligned deposition on ohmic metal, the influence of the increase of the area of the P-type injection region is eliminated, the Schottky contact area is not reduced, compared with the prior art, the generated ohmic contact area is large, the rise of conduction voltage drop can be prevented, and the technical problems that the ohmic contact is formed by photoetching alignment in the silicon carbide device in the prior art, the area of the P-type injection region is increased, the area of the Schottky contact is reduced and the conduction voltage drop is increased due to the process limit of photoetching alignment are solved.
2) The silicon carbide device of the application is manufactured by adopting the manufacturing method of the silicon carbide device, and comprises the following steps: the epitaxial layer is positioned on the surface of one side of the substrate, the epitaxial layer comprises a body part and a plurality of doping parts positioned on the body part, the ohmic contact metal parts are positioned on the part surface of one side of the doping parts, which is far away from the substrate, of the ohmic contact metal parts, the oxidation parts are positioned on the part surface of one side, which is far away from the substrate, of the epitaxial layer, the Schottky contact metal layers are positioned on the part surface of one side, which is far away from the epitaxial layer, of the ohmic contact metal parts, the part surface of one side, which is far away from the substrate, of the epitaxial layer and the part surface of the oxidation parts, which is far away from the epitaxial layer, and the electrode layers are positioned on one side, which is far away from the epitaxial layer, of the Schottky contact metal layers. By adopting the manufacturing method of the silicon carbide device, the technical limit of photoetching alignment is eliminated, the influence of the increase of the area of the P-type injection region is avoided, the Schottky contact area is not reduced, the generated ohmic contact area is larger than that of the prior art, the rise of conduction voltage drop can be prevented, and the technical problems that the silicon carbide device forms ohmic contact by adopting photoetching alignment in the prior art, the area of the P-type injection region is increased, the Schottky contact area is reduced and the conduction voltage drop is increased due to the technical limit of photoetching alignment are solved.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method of fabricating a silicon carbide device, comprising:
step S1: providing a substrate, and forming an epitaxial layer on the exposed surface of the substrate, wherein the epitaxial layer is provided with a plurality of grooves which are arranged at intervals;
step S2: ion implantation is carried out on the epitaxial layer from one side of the groove away from the substrate, and a doping part is formed on the epitaxial layer at the part between the substrate and the groove, wherein the doping type of the doping part is different from that of the substrate;
step S3: forming a side wall structure on the side wall of the groove, and forming a first preparation metal layer on the exposed surface of the doping part and the exposed surface of the side wall structure;
step S4: annealing the first preparation metal layer to enable part of the first preparation metal layer to react with the doped part to generate an ohmic contact metal part, and removing the side wall structure and the first preparation metal layer on the surface of the side wall structure;
Step S5: forming an oxidation part on a first part of exposed surface of the structure formed in the step S4, forming a Schottky contact metal layer on a second part of exposed surface of the structure formed in the step S4 and at least part of exposed surface of the oxidation part, wherein the first part of exposed surface is positioned on two sides of the second part of exposed surface, and the first part of exposed surface and the second part of exposed surface respectively comprise at least one groove;
step S6: and forming an electrode layer on the exposed surface of the Schottky contact metal layer on the side far away from the substrate.
2. The method of claim 1, wherein forming a sidewall structure on a sidewall of the recess comprises:
forming a first oxide layer on the exposed surface of the structure formed in the step S2;
and removing part of the first oxide layer on the surface of the doped part so as to expose part of the surface of the doped part, wherein the rest of the first oxide layer on the side wall of the groove is the side wall structure.
3. The method of claim 1, wherein forming an oxide on the exposed surface of the first portion of the structure formed in step S4 comprises:
Forming a second oxide layer on the exposed surface of the structure formed in the step S4;
and removing the second oxide layer on the surface of the second part of the structure formed in the step S4, and forming the oxidation part by the rest second oxide layer.
4. The method of claim 1, wherein forming a schottky contact metal layer on the second partially exposed surface of the structure formed in step S4 and on at least a portion of the exposed surface of the oxide portion comprises:
forming a second preliminary metal layer on the exposed surface of the second portion of the structure formed in the step S4 and on the exposed surface of the oxidized portion;
and removing the second preparation metal layer on part of the surface of the oxidation part, reserving the second preparation metal layer on the first preset part surface of the oxidation part, and forming the Schottky contact metal layer by the rest second preparation metal layer, wherein the first preset part surface is positioned on the periphery of the exposed surface of the second part of the structure formed in the step S4.
5. The method of claim 1, wherein forming an epitaxial layer on the exposed surface of the substrate comprises:
forming a preliminary epitaxial layer on the exposed surface of the substrate;
And removing part of the preparation epitaxial layer to form a plurality of grooves, and forming the epitaxial layer by the rest of the preparation epitaxial layer.
6. The method according to claim 1, wherein step S2 comprises:
step S21: ion implantation is carried out on the epitaxial layer from one side of the groove away from the substrate, and a preparation doping part is formed on the epitaxial layer between the substrate and the groove;
step S22: forming a protective layer on the exposed surface of the structure formed in the step S21;
step S23: performing activation treatment on the preparation doped part to form the doped part;
step S24: and removing the protective layer.
7. The method according to claim 1, wherein step S6 comprises:
forming a preliminary electrode layer on the exposed surface of the structure formed in the step S5;
and removing the preparation electrode layer on the partial surface of the Schottky contact metal layer, reserving the preparation electrode layer on the second preset partial surface of the Schottky contact metal layer, and forming the electrode layer by the rest preparation electrode layer, wherein the second preset partial surface is positioned on the periphery of the exposed surface of the second part of the structure formed in the step S4.
8. The method according to claim 1, characterized in that after step S6, the method further comprises:
an ohmic contact metal layer is formed on a surface of the substrate on a side away from the epitaxial layer.
9. The method according to any one of claims 1 to 8, characterized in that after step S6, the method further comprises:
forming a passivation layer on the exposed surface of the structure formed in the step S6;
and removing the passivation layer on part of the surface of the electrode layer, reserving the passivation layer on the surface of a third preset part of the electrode layer, wherein the rest passivation layer forms a passivation part, and the surface of the third preset part is positioned on the periphery of the exposed surface of the second part of the structure formed in the step S4.
10. A silicon carbide device, comprising: the silicon carbide device is manufactured by the manufacturing method of any one of claims 1 to 9.
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| CN113161408A (en) * | 2020-12-28 | 2021-07-23 | 全球能源互联网研究院有限公司 | Junction terminal structure of high-voltage SiC Schottky diode and preparation method thereof |
| CN215771162U (en) * | 2021-01-20 | 2022-02-08 | 北京利宝生科技有限公司 | Groove type silicon carbide MPS diode structure |
| CN114759096A (en) * | 2022-05-25 | 2022-07-15 | 湖北九峰山实验室 | Schottky diode device and manufacturing method thereof |
| CN219371034U (en) * | 2023-06-15 | 2023-07-18 | 江苏昕感科技有限责任公司 | Schottky contact groove type SiC JBS structure |
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