CN117075256A - Mixed plasmon waveguide Bragg grating polarizer with staggered gratings - Google Patents
Mixed plasmon waveguide Bragg grating polarizer with staggered gratings Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000001228 spectrum Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 238000002310 reflectometry Methods 0.000 claims description 3
- 238000005070 sampling Methods 0.000 claims description 3
- 238000005457 optimization Methods 0.000 abstract description 2
- 230000010287 polarization Effects 0.000 description 8
- 230000010354 integration Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
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- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
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- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Abstract
The application discloses a hybrid plasmon waveguide Bragg grating polarizer of an interlaced grating, which comprises a silicon-based hybrid plasmon waveguide structure, a high-refractive-index waveguide grating structure and a low-refractive-index waveguide grating structure; the silicon-based hybrid plasmon waveguide structure comprises a silicon substrate layer, an oxygen-buried layer, a silicon waveguide layer, a low-refractive-index waveguide layer and a metal waveguide layer of an SOI wafer, wherein the silicon substrate layer, the oxygen-buried layer, the silicon waveguide layer, the low-refractive-index waveguide layer and the metal waveguide layer are arranged from bottom to top, a group of high-refractive-index waveguide grating structures are introduced at the interface of the low-refractive-index waveguide layer and the silicon waveguide layer, and a group of low-refractive-index waveguide grating structures are introduced at the interface of the low-refractive-index waveguide layer and the metal waveguide layer. Has the following advantages: the structure is compact, and the reflection spectrum optimization and the single mode reflection problem can be solved by fine adjustment of structural parameters while good reflection characteristics are maintained.
Description
Technical Field
The application relates to a hybrid plasmon waveguide Bragg grating polarizer with staggered gratings, belonging to the technical field of optical elements.
Background
Because the silicon-on-insulator (SOI) material has higher refractive index contrast, the silicon-on-insulator (SOI) material has stronger constraint effect on light, and the miniaturization of a photon device can be realized; the device preparation process is compatible with the CMOS process, has lower cost and is convenient for realizing photoelectric integration. Silicon photonic integration technology based on SOI is thus a research hotspot for photonic integration technology. However, such asymmetric waveguide structures can cause strong birefringence effects, as well as polarization-related problems, due to the small size of SOI silicon waveguides (450 nm x 220 nm). Then, a hybrid plasmonic waveguide (hybrid plasmonic waveguides, HPWs) structure is proposed, and the hybrid plasmonic waveguide is characterized in that a low refractive index material is introduced between a metal layer and a high refractive index material layer, so that TE mode and TM mode can be respectively limited in the high refractive index material layer and the low refractive index material layer, optical field manipulation in a sub-wavelength range can be realized, and relatively low transmission loss can be realized.
Among them, bragg gratings as wavelength-dependent photonic devices can realize wavelength selection of polarization modes with HPWs structures having outstanding limitations and filtering characteristics and low loss characteristics, attracting many scholars' studies. In 2014 Jihua Zhang et al, broadband compact type TE-Pass/TM-Stop polarizers based on hybrid plasmon bragg grating structures, (Zhang, j., cassan, e., zhang, x., "Wideband and Compact TE-Pass/TM-Stop Polarizer Based on a Hybrid Plasmonic Bragg Grating for SiliconPhotonics," Journal of Lightwave Technology (7), 1383-1386 (2014)) extinction ratios were all greater than 17.1dB, while losses in TE and TM modes were less than 1.36 and 0.69dB, respectively. The function of the optical fiber has certain limitation, only the TM mode is subjected to wavelength selection, the TE mode is not considered to be subjected to wavelength selection, the application of the optical fiber has certain limitation, and the optical fiber has spectral defects caused by metal grating absorption and the like in the middle region of the TM mode forbidden spectrum of the wavelength selection. The polarization characteristics of the mixed plasmon waveguide and the wavelength screening property of the Bragg grating structure are fully combined, wavelength selection under different polarization states is achieved, meanwhile, the output of different modes can be selected by changing the grating period by utilizing the property that the effective refractive indexes of the waveguide structures under TE and TM modes are different, and improvement is made for the problem of spectrum defects. In order to realize a photonic device with high integration and high utilization rate, a plurality of functions can be realized by performing fine tuning on a certain structure, the spectral spectrum characteristics of the hybrid plasmon waveguide Bragg grating can be improved, and the problem of single mode reflection is very significant.
Disclosure of Invention
The application aims to solve the technical problems by providing the hybrid plasmon waveguide Bragg grating polarizer with the staggered grating, which has a compact structure, and can realize reflection spectrum optimization and single mode reflection by fine adjustment of structural parameters while maintaining good reflection characteristics.
In order to solve the technical problems, the application adopts the following technical scheme:
a hybrid plasmon waveguide Bragg grating polarizer of an interlaced grating comprises a silicon-based hybrid plasmon waveguide structure, a high refractive index waveguide grating structure and a low refractive index waveguide grating structure;
the silicon-based mixed plasmon waveguide structure comprises a silicon substrate layer, an oxygen burying layer, a silicon waveguide layer, a low refractive index waveguide layer and a metal waveguide layer which are arranged from bottom to top, wherein the widths of the silicon substrate layer and the oxygen burying layer of the SOI wafer are the same, the widths of the silicon waveguide layer, the low refractive index waveguide layer and the metal waveguide layer are the same and narrower than the widths of the silicon substrate layer and the oxygen burying layer of the SOI wafer, and the silicon waveguide layer is centrally arranged above the oxygen burying layer;
a group of high-refractive-index waveguide grating structures are introduced at the interface of the low-refractive-index waveguide layer and the silicon waveguide layer, and a group of low-refractive-index waveguide grating structures are introduced at the interface of the low-refractive-index waveguide layer and the metal waveguide layer;
the high-refractive-index waveguide grating structure and the low-refractive-index waveguide grating structure are arranged in parallel up and down, and a certain offset exists between the high-refractive-index waveguide grating structure and the low-refractive-index waveguide grating structure.
Further, the high refractive index waveguide grating structure is a grating structure with the upper surface of a silicon waveguide layer with the thickness Ha, the etching width is w, the etching depth is Hb and the period is Λ, the grating structure with the etching depth being Hb is filled with low refractive index materials, ha and Hb take different values, and Ha > Hb.
Further, the low refractive index waveguide grating structure is a grating structure with the etching width w and the etching depth Hb on the upper surface of the low refractive index waveguide layer with the thickness Hc, hc and Hb take different values, hc > Hb, and metal is filled in the grating structure with the etching depth Hb.
Furthermore, the high refractive index waveguide grating structure and the low refractive index waveguide grating structure are arranged in parallel up and down, the two groups of gratings are arranged in a non-aligned mode up and down, and a metal waveguide layer with the width w and the thickness Hm is arranged above the low refractive index waveguide layer.
Further, the offset between the high refractive index waveguide grating structure and the low refractive index waveguide grating structure is Λ/2.
Further, the polarizer may control the TE mode and the TM mode respectively, where the period lengths Λ in the high-refractive-index waveguide grating structure and the low-refractive-index waveguide grating structure are Λ=la+lb, and la and lb are the lengths of the unetched region and the etched region of the grating structure in one period respectively.
Further, the hybrid plasmon waveguide Bragg grating structure is formed by the high-refractive-index waveguide grating structure, the low-refractive-index waveguide grating structure and the metal waveguide layer.
Further, the specific parameter value of the hybrid plasmonic waveguide bragg grating structure is determined by the following formula:
；
wherein,for the center wavelength of the hybrid plasmonic waveguide structure, < >>The effective refractive indexes of the mixed plasmon waveguide structure under TE mode and TM mode are respectively, m is Bragg order number, and 1 is taken.
Further, the implementation method of the polarizer comprises the following steps:
step S1: constructing a hybrid plasmonic waveguide structure using COMSOL Multiphysics software;
step S2: calculating the effective refractive index and analyzing the mode of the mixed plasmon waveguide structure obtained in the step S1 under the conditions of the same wavelength and different thicknesses Hc;
step S3: sampling and analyzing the effective refractive index data of the same central wavelength and different low refractive index waveguide layer thicknesses Hc obtained in the step S2, selecting different low refractive index waveguide layer thicknesses Hc, primarily obtaining a reflection spectrum width according to the effective refractive index difference value, and primarily obtaining a reflection spectrum center according to the effective refractive index and the value;
step S4: calculating effective refractive indexes of the low-refractive-index waveguide layer thicknesses Hc selected in the step S3 under different center wavelengths; taking the incident light vertically incident into the Bragg grating as an incident direction condition;
step S5: according to the effective refractive index obtained in the step S4, the period length Λ of the mixed plasmon waveguide Bragg grating structure under the specified center wavelength can be calculated;
step S6: according to the method, a hybrid plasmon waveguide Bragg grating structure is constructed by staggering the corresponding high-refractive-index waveguide grating structure and low-refractive-index waveguide grating structure by Λ/2 offset when the thickness Hc of the low-refractive-index waveguide layer is selected in the step S3 and the step S5, and according to different effective refractive indexes in TM and TE modes, the TM and TE modes can be limited to the low-refractive-index waveguide layer and the silicon waveguide layer respectively by the hybrid plasmon waveguide structure, so that independent control of the TM and TE modes in an operating band can be realized by changing other parameters such as a period Λ.
Compared with the prior art, the application has the following technical effects:
the polarizer hybrid plasmon waveguide Bragg grating has a simple structure, a compact size, a higher utilization rate and integration degree, a specific low refractive index material layer thickness Hc can be selected according to a required polarization mode, dynamic selection of reflection in a designated wave band can be realized by properly adjusting the period and the period number of grating units, the method can be used for realizing a compact polarized reflecting device for high-density silicon photon integration, and has a certain application value in the fields of optical communication and silicon light integration.
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In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. Like elements or portions are generally identified by like reference numerals throughout the several figures. In the drawings, elements or portions thereof are not necessarily drawn to scale.
FIG. 1 is a schematic diagram of an xy cross-sectional structure of a hybrid plasmonic waveguide structure of the application;
FIG. 2 is a schematic view of yz cross-sectional structure of a hybrid plasmonic waveguide structure of the application;
FIG. 3 is a graph showing the real part of the effective refractive index of TM and TE modes at 1310nm and Hc;
fig. 4 shows a reflection spectrum of a hybrid plasmon waveguide bragg grating low refractive index waveguide layer of the present application with thickness Hc, la+lb=Λ, silicon waveguide layer Si with thickness Ha, grating etching depth Hb, and metal layer Ag with thickness Hm as a TE mode polarization reflector;
fig. 5 shows a reflection spectrum of a hybrid plasmon waveguide bragg grating low refractive index waveguide layer of the present application with thickness Hc, la+lb=Λ, silicon waveguide layer Si with thickness Ha, grating etch depth Hb, and metal layer Ag with thickness Hm as a TM mode polarization reflector;
fig. 6 is a schematic diagram of a three-dimensional structure of an interleaved grating sentence hybrid plasmonic waveguide bragg grating polarizer of the present application.
Detailed Description
An embodiment, as shown in fig. 6, a hybrid plasmon waveguide bragg grating polarizer of an interleaved grating, comprising:
the silicon substrate layer 1, the oxygen burying layer 2, the silicon waveguide layer 3, the low refractive index waveguide layer 4 and the metal waveguide layer 5 of the SOI wafer are arranged from bottom to top, the widths of the silicon substrate layer 1, the low refractive index waveguide layer 4 and the metal waveguide layer 5 of the SOI wafer are the same, the widths of the silicon substrate layer 1, the low refractive index waveguide layer 4 and the metal waveguide layer 5 are narrower than those of the silicon substrate layer 1 and the oxygen burying layer 2 of the SOI wafer, the silicon waveguide layer 3 is arranged above the oxygen burying layer 2 in the middle to form a silicon-based mixed plasmon waveguide structure, a group of high refractive index waveguide grating structures are introduced at the interface between the low refractive index waveguide layer 4 and the silicon waveguide layer 3, a group of low refractive index waveguide grating structures are introduced at the interface between the low refractive index waveguide layer 4 and the metal waveguide layer 5, the high refractive index waveguide grating structures and the low refractive index waveguide grating structures are arranged in an up-down parallel mode, a certain offset exists between the high refractive index waveguide grating structures and the low refractive index waveguide grating structures, and the silicon-based mixed plasmon waveguide structures jointly form the mixed plasmon waveguide Bragg grating polarizer.
The high refractive index waveguide grating structure is a grating structure with the upper surface of a silicon waveguide layer with the thickness Ha, the etching width is w, the etching depth is Hb and the period is Λ, the grating structure with the etching depth being Hb is filled with low refractive index materials, ha and Hb take different values, ha > Hb, the low refractive index waveguide grating structure is a grating structure with the upper surface of a low refractive index waveguide layer with the thickness Hc, the etching depth being Hb takes different values, hc and Hb take different values, hc > Hb, and the grating structure with the etching depth being Hb is filled with metal (including but not limited to Ag, au, al and the like).
The high refractive index waveguide grating structure and the low refractive index waveguide grating structure are arranged in parallel up and down, the two groups of gratings are arranged in a non-aligned manner up and down, other parameters (including but not limited to duty ratio, period, etching depth and period number) are all adjusted according to actual requirements except materials, and finally a metal waveguide layer (including but not limited to Ag, au, al and the like) with the width w and the thickness Hm is arranged above
The high-refractive-index waveguide grating structure and the low-refractive-index waveguide grating structure are stacked up and down, and a certain offset exists between the high-refractive-index waveguide grating structure and the low-refractive-index waveguide grating structure, wherein the offset is lambda/2.
The mixed plasmon waveguide Bragg grating structure is composed of the high-refractive-index waveguide grating structure, the low-refractive-index waveguide grating structure and the metal waveguide layer, and the cycle number is N.
The polarizer can respectively control TE mode and TM mode, and comprises the steps of mode separation, selection, reflection and transmission, and can improve the problem of absorption defects of central areas of mode and TM mode reflection spectrum, wherein the period length Λ of the high-refractive-index waveguide grating structure and the period length Λ of the low-refractive-index waveguide grating structure are Λ=la+lb, and la and lb are the lengths of unetched areas and etched areas of the grating structure in one period respectively; the specific parameter values are determined by the following formula:
；
wherein,for the center wavelength of the hybrid plasmonic waveguide structure, < >>The effective refractive indexes of the mixed plasmon waveguide structure under TE mode and TM mode are respectively, m is Bragg order number, and 1 is taken.
The polarizer adopts a high-refractive index waveguide grating structure and a low-refractive index waveguide grating structure which are arranged in an up-down parallel and non-aligned mode, and the implementation method comprises the following steps:
step S1: constructing a hybrid plasmonic waveguide structure using COMSOL Multiphysics software;
step S2: calculating the effective refractive index and analyzing the mode of the mixed plasmon waveguide structure obtained in the step S1 under the conditions of the same wavelength and different thicknesses Hc;
step S3: sampling and analyzing the effective refractive index data of the same central wavelength and different low refractive index waveguide layer thicknesses Hc obtained in the step S2, selecting different low refractive index waveguide layer thicknesses Hc, primarily obtaining a reflection spectrum width according to the effective refractive index difference value, and primarily obtaining a reflection spectrum center according to the effective refractive index and the value;
step S4: calculating effective refractive indexes of the low-refractive-index waveguide layer thicknesses Hc selected in the step S3 under different center wavelengths; taking the incident light vertically incident into the Bragg grating as an incident direction condition;
step S5: according to the effective refractive index obtained in the step S4, the period length Λ of the mixed plasmon waveguide Bragg grating structure under the specified center wavelength can be calculated;
step S6: according to the method, a hybrid plasmon waveguide Bragg grating structure is constructed by staggering the corresponding high-refractive-index waveguide grating structure and low-refractive-index waveguide grating structure by Λ/2 offset when the thickness Hc of the low-refractive-index waveguide layer is selected in the step S3 and the step S5, and according to different effective refractive indexes in TM and TE modes, the TM and TE modes can be limited to the low-refractive-index waveguide layer and the silicon waveguide layer respectively by the hybrid plasmon waveguide structure, so that independent control of the TM and TE modes in an operating band can be realized by changing other parameters such as a period Λ.
Fig. 1 is a schematic cross-sectional structure of a hybrid plasmonic waveguide, the material and parameter distribution of the structure being as follows:
the dimensions of this structure are set as follows, w1=2000 nm, w=450 nm, ha=220 nm, hc=130 nm for TM mode, hc=80 nm, hm=300 nm for TE mode. W1 is the width of the SiO2 substrate, and w is the width of the metal waveguide layer Ag, the low-refractive-index waveguide layer SiO2 and the silicon waveguide layer Si. Ha is the thickness of the silicon waveguide layer, hc is the thickness of the low refractive index waveguide layer, hm is the thickness of the metal waveguide layer.
Fig. 2 is a schematic view of a longitudinal section structure of a device after the grating structure is introduced on the basis of the hybrid plasmonic waveguide structure of fig. 1, hb=30 nm, la=lb=Λ/2, and the remaining materials and structural parameters are consistent with those of fig. 1.
One period length in the bragg grating is Λ=la+lb, and the specific parameter value is determined by the following formula:
；
wherein,the effective refractive indexes of the waveguide structure in TE mode and TM mode respectively; la and lb are lengths of an unetched area and an etched area of the grating structure in one period respectively; m is the Bragg number, 1 is taken, and the specific value of the period length Λ will be described in detail in the following operation.
FIG. 3 is a graph showing the real part of the effective refractive index of the structure in TE and TM modes at 1310nm center wavelength and Hc thickness of different low refractive index waveguides, and the reflection effect of different requirements can be realized according to the effective refractive index of the Hc waveguides with different thickness at 1310 nm.
Illustration 1: the low refractive index waveguide layer thickness hc=80 nm of the hybrid plasmon waveguide, Λ=229 nm, la=lb=114.5 nm, ha=220 nm, hb=30 nm, hm=300 nm, offset Λ/2=114.5 nm, n=86 at 1310 nm. FIG. 4 is a graph of the reflectance spectrum of incident light from air in the TM and TE modes of a hybrid plasmon waveguide Bragg grating with wavelength on the abscissa and reflectance on the ordinate, which exhibits TM mode transmission and TE mode reflection at the 1297 nm-1324 nm band, with a reflectance of greater than 98%.
Illustration 2: the low refractive index waveguide layer thickness hc=130 nm of the hybrid plasmon waveguide, Λ=287 nm, la=lb=143.5 nm, ha=220 nm, hb=30 nm, hm=300 nm, offset Λ/2=114.5 nm, n=86 at 1310 nm. Fig. 4 and 5 are graphs of TE and TM mode reflection spectrum of a hybrid plasmonic waveguide bragg grating where incident light is perpendicularly incident from air, the abscissa is wavelength, and the ordinate is reflectivity, and exhibits TE mode transmission and TM mode reflection in the band of 1299nm to 1326nm, and the reflectivity is greater than 98%. The structure can control the TM or TE single polarization state output in a specific wave band by changing the period and the thickness of the low refractive index waveguide layer
The description of the present application has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the application in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments were chosen and described in order to best explain the principles of the application and the practical application, and to enable others of ordinary skill in the art to understand the application for various embodiments with various modifications as are suited to the particular use contemplated.
Claims (9)
1. A hybrid plasmonic waveguide bragg grating polarizer of an interleaved grating, characterized by: the device comprises a silicon-based hybrid plasmon waveguide structure, a high-refractive-index waveguide grating structure and a low-refractive-index waveguide grating structure;
the silicon-based mixed plasmon waveguide structure comprises a silicon substrate layer, an oxygen burying layer, a silicon waveguide layer, a low refractive index waveguide layer and a metal waveguide layer which are arranged from bottom to top, wherein the widths of the silicon substrate layer and the oxygen burying layer of the SOI wafer are the same, the widths of the silicon waveguide layer, the low refractive index waveguide layer and the metal waveguide layer are the same and narrower than the widths of the silicon substrate layer and the oxygen burying layer of the SOI wafer, and the silicon waveguide layer is centrally arranged above the oxygen burying layer;
a group of high-refractive-index waveguide grating structures are introduced at the interface of the low-refractive-index waveguide layer and the silicon waveguide layer, and a group of low-refractive-index waveguide grating structures are introduced at the interface of the low-refractive-index waveguide layer and the metal waveguide layer;
the high-refractive-index waveguide grating structure and the low-refractive-index waveguide grating structure are arranged in parallel up and down, and a certain offset exists between the high-refractive-index waveguide grating structure and the low-refractive-index waveguide grating structure.
2. The crossed-grating hybrid plasmonic waveguide bragg grating polarizer of claim 1, wherein: the high-refractive-index waveguide grating structure is a grating structure with the thickness Ha, the etching width of the upper surface of the silicon waveguide layer is w, the etching depth is Hb and the period is Λ, the grating structure with the etching depth being Hb is filled with low-refractive-index materials, ha and Hb take different values, and Ha > Hb.
3. The crossed-grating hybrid plasmonic waveguide bragg grating polarizer of claim 1, wherein: the low-refractive-index waveguide grating structure is formed by etching the upper surface of a low-refractive-index waveguide layer with the thickness Hc to form a grating structure with the width w and the etching depth Hb, hc and Hb take different values, hc > Hb, and metal is filled in the grating structure with the etching depth Hb.
4. The crossed-grating hybrid plasmonic waveguide bragg grating polarizer of claim 1, wherein: the high-refractive-index waveguide grating structure and the low-refractive-index waveguide grating structure are arranged in parallel up and down, the two groups of gratings are not aligned up and down, and a metal waveguide layer with the width w and the thickness Hm is arranged above the low-refractive-index waveguide layer.
5. The crossed-grating hybrid plasmonic waveguide bragg grating polarizer of claim 1, wherein: the offset between the high refractive index waveguide grating structure and the low refractive index waveguide grating structure is Λ/2.
6. The crossed-grating hybrid plasmonic waveguide bragg grating polarizer of claim 1, wherein: the polarizer can respectively control TE mode and TM mode, the period length Λ in the high-reflectivity waveguide grating structure and the period length Λ in the low-refractive-index waveguide grating structure are Λ=la+lb, and la and lb are the lengths of an unetched area and an etched area of the grating structure in one period respectively.
7. The crossed-grating hybrid plasmonic waveguide bragg grating polarizer of claim 1, wherein: the mixed plasmon waveguide Bragg grating structure is composed of the high-refractive-index waveguide grating structure, the low-refractive-index waveguide grating structure and the metal waveguide layer.
8. The crossed-grating hybrid plasmonic waveguide bragg grating polarizer of claim 7, wherein: the specific parameter value of the hybrid plasmonic waveguide Bragg grating structure is determined by the following formula:
；
wherein,for the center wavelength of the hybrid plasmonic waveguide structure, < >>The effective refractive indexes of the mixed plasmon waveguide structure under TE mode and TM mode are respectively, m is Bragg order number, and 1 is taken.
9. The crossed-grating hybrid plasmonic waveguide bragg grating polarizer of claim 7, wherein: the implementation method of the polarizer comprises the following steps:
step S1: constructing a hybrid plasmonic waveguide structure using COMSOL Multiphysics software;
step S2: calculating the effective refractive index and analyzing the mode of the mixed plasmon waveguide structure obtained in the step S1 under the conditions of the same wavelength and different thicknesses Hc;
step S3: sampling and analyzing the effective refractive index data of the same central wavelength and different low refractive index waveguide layer thicknesses Hc obtained in the step S2, selecting different low refractive index waveguide layer thicknesses Hc, primarily obtaining a reflection spectrum width according to the effective refractive index difference value, and primarily obtaining a reflection spectrum center according to the effective refractive index and the value;
step S4: calculating effective refractive indexes of the low-refractive-index waveguide layer thicknesses Hc selected in the step S3 under different center wavelengths; taking the incident light vertically incident into the Bragg grating as an incident direction condition;
step S5: according to the effective refractive index obtained in the step S4, the period length Λ of the mixed plasmon waveguide Bragg grating structure under the specified center wavelength can be calculated;
step S6: according to the method, a hybrid plasmon waveguide Bragg grating structure is constructed by staggering the corresponding high-refractive-index waveguide grating structure and low-refractive-index waveguide grating structure by Λ/2 offset when the thickness Hc of the low-refractive-index waveguide layer is selected in the step S3 and the step S5, and according to different effective refractive indexes in TM and TE modes, the TM and TE modes can be limited to the low-refractive-index waveguide layer and the silicon waveguide layer respectively by the hybrid plasmon waveguide structure, so that independent control of the TM and TE modes in an operating band can be realized by changing other parameters such as a period Λ.
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| US20200064195A1 (en) * | 2018-08-27 | 2020-02-27 | Csem Centre Suisse D'electronique Et De Microtechnique Sa - Recherche Et Developpement | Optical filter, optical filter system, spectrometer and method of fabrication thereof |
| CN115826272A (en) * | 2022-11-23 | 2023-03-21 | 宁波财经学院 | Light modulator based on electron concentration spatial distribution and preparation method and application thereof |
| CN115903132A (en) * | 2022-12-27 | 2023-04-04 | 南京邮电大学 | Hybrid plasmon waveguide Bragg grating polarization filter |
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| US6501783B1 (en) * | 2000-02-24 | 2002-12-31 | Lucent Technologies Inc. | Distributed feedback surface plasmon laser |
| JP2007322903A (en) * | 2006-06-02 | 2007-12-13 | Ricoh Co Ltd | Light processing element |
| US20100014808A1 (en) * | 2008-06-05 | 2010-01-21 | Colorado School Of Mines | Hybrid dielectric/surface plasmon polariton waveguide with grating coupling |
| CN102100005A (en) * | 2008-07-14 | 2011-06-15 | 惠普发展公司，有限责任合伙企业 | Hybrid guided-mode resonance filter and method employing distributed Bragg reflection |
| CN208569082U (en) * | 2017-12-08 | 2019-03-01 | 南京邮电大学 | A kind of mixing phasmon waveguide bragg grating Polarization filter |
| US20200064195A1 (en) * | 2018-08-27 | 2020-02-27 | Csem Centre Suisse D'electronique Et De Microtechnique Sa - Recherche Et Developpement | Optical filter, optical filter system, spectrometer and method of fabrication thereof |
| CN115826272A (en) * | 2022-11-23 | 2023-03-21 | 宁波财经学院 | Light modulator based on electron concentration spatial distribution and preparation method and application thereof |
| CN115903132A (en) * | 2022-12-27 | 2023-04-04 | 南京邮电大学 | Hybrid plasmon waveguide Bragg grating polarization filter |
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