CN117070878A - Corrosion resistant coating, method for improving corrosion resistance of surface and semiconductor processing device - Google Patents
Corrosion resistant coating, method for improving corrosion resistance of surface and semiconductor processing device Download PDFInfo
- Publication number
- CN117070878A CN117070878A CN202311048532.8A CN202311048532A CN117070878A CN 117070878 A CN117070878 A CN 117070878A CN 202311048532 A CN202311048532 A CN 202311048532A CN 117070878 A CN117070878 A CN 117070878A
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- Prior art keywords
- corrosion
- resistant coating
- resistant
- protective layer
- metals
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- Pending
Links
- 238000005260 corrosion Methods 0.000 title claims abstract description 123
- 230000007797 corrosion Effects 0.000 title claims abstract description 123
- 239000011248 coating agent Substances 0.000 title claims abstract description 67
- 238000000576 coating method Methods 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000012545 processing Methods 0.000 title claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 39
- 239000011241 protective layer Substances 0.000 claims abstract description 35
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000011777 magnesium Substances 0.000 claims abstract description 21
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 19
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 17
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 13
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 13
- 150000002222 fluorine compounds Chemical class 0.000 claims abstract description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 239000000956 alloy Substances 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 22
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 20
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 20
- 229910052723 transition metal Inorganic materials 0.000 claims description 20
- 150000003624 transition metals Chemical class 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 14
- 150000002739 metals Chemical class 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 10
- 238000007750 plasma spraying Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000000443 aerosol Substances 0.000 claims description 6
- 239000011575 calcium Substances 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 2
- 229910001512 metal fluoride Inorganic materials 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical group O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/08—Metallic material containing only metal elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The invention provides a corrosion-resistant coating, a method for improving corrosion resistance of a surface and a semiconductor processing device comprising the corrosion-resistant coating. The corrosion-resistant coating comprises a protective layer and a corrosion-resistant reinforcing layer; wherein the corrosion-resistant enhancement layer is formed of one or more of metal oxides, fluorides, and oxyfluorides including one or more of aluminum, magnesium, and rare earth metals. The corrosion-resistant coating of the present invention has a specific range of porosity and roughness, such that a component having the corrosion-resistant coating has significantly improved corrosion resistance.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing, and more particularly to a corrosion-resistant coating, a method of improving corrosion resistance of a surface, and a semiconductor processing apparatus including the corrosion-resistant coating.
Background
In semiconductor manufacturing processes, dry etching uses gaseous chemical etchants that react with materials on a semiconductor workpiece (e.g., a silicon wafer) to etch away unwanted portions of the material, and the reactants are pumped away as gaseous volatile species. Under the action of an external electric field, a magnetic field and the like, etching gas forms gas in a weak ionization state, such as electrons, ions and neutral active particles, through glow discharge. The active particles also cause etching damage to parts inside the reaction cavity in the process of reacting with the etched material.
Disclosure of Invention
The invention provides a corrosion-resistant coating for a semiconductor processing device, a method for improving the corrosion resistance of a surface and the semiconductor processing device.
According to an aspect of the present invention, there is provided a corrosion-resistant coating for a semiconductor processing apparatus, comprising a protective layer and a corrosion-resistant enhancement layer;
wherein the corrosion-resistant enhancement layer is formed of one or more of oxides, fluorides, and oxyfluorides of metals including one or more of aluminum, magnesium, and rare earth metals.
According to another aspect of the present invention, there is provided a method of improving corrosion resistance of a surface, comprising sequentially coating a protective layer and a corrosion-resistant reinforcing layer on a surface of one or more components of a semiconductor processing apparatus;
wherein the corrosion-resistant enhancement layer is formed of one or more of oxides, fluorides, and oxyfluorides of one or more metals including aluminum, magnesium, and rare earth metals.
Preferably, the method comprises:
depositing a protective layer on the surface of the component by plasma spraying, physical vapor deposition, chemical vapor deposition, atomic layer deposition or aerosol deposition;
a corrosion-resistant reinforcing layer is deposited on the surface of the part having the protective layer by a plasma spraying method, a physical vapor deposition method, a chemical vapor deposition method, an atomic layer deposition method, or an aerosol deposition method.
According to yet another aspect of the present invention, there is provided a semiconductor processing apparatus comprising one or more components having the above-described corrosion-resistant coating on a surface thereof.
The corrosion-resistant coating can enhance the corrosion resistance of the parts, prolong the service time of equipment, and reach the conditions required by the balance of the semiconductor process, thereby improving the production efficiency of the whole machine of the semiconductor processing device.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
The drawings are included to provide a better understanding of the present invention and are not to be construed as limiting the invention. Wherein:
FIG. 1 is a schematic view of an etching apparatus according to an embodiment of the present invention;
FIG. 2 shows a schematic structural view of the surface of the component with the corrosion resistant coating according to FIG. 1;
FIG. 3 is a 3D profile scan picture of a corrosion resistant coating according to the present invention;
FIG. 4 is a process flow diagram of forming a corrosion-resistant coating according to one embodiment of the invention;
FIG. 5 is a schematic illustration of a sample test according to test example 1;
FIG. 6 is a photograph of the sample surface after testing as shown in FIG. 5;
FIG. 7 is a schematic diagram of sample test results according to test example 1.
Detailed Description
Exemplary embodiments of the present disclosure are described below in conjunction with the accompanying drawings, which include various details of the embodiments of the present disclosure to facilitate understanding, and should be considered as merely exemplary. Accordingly, one of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope of the present disclosure. Also, descriptions of well-known functions and constructions are omitted in the following description for clarity and conciseness.
The etching gas commonly used in semiconductor process has C x F y 、C x H y F z 、Cl 2 、HBr、SF 6 、NF 3 、O 2 And H 2 Etc. Typically C is used x F y And H is 2 As a process reaction gas, a more excellent etching selectivity can be achieved, and less plasma damage is generated to the processed semiconductor workpiece. However, the inventors have found that such mixed gases are also very susceptible to damage to components within the semiconductor processing apparatus (e.g., components within the etch reactor chamber, particularly ceramic components), and that chamber contamination can affect product yields.
In order to reduce the damage of the above-mentioned process gas to the components of the semiconductor processing apparatus (especially, ceramic components), the present inventors have performed special coating treatment on the ceramic components (e.g., nozzles) in the reaction chamber, thereby improving the corrosion resistance of the surface to the process gas and further achieving the requirement of controlling the process stability. The present inventors have developed a corrosion resistant coating for a reaction chamber (e.g., etch chamber) and method of forming. The corrosion-resistant coating can achieve excellent corrosion-resistant effect and better process stability, so that equipment can run more efficiently and reliably, longer service life is realized, and higher overall efficiency is realized in mass production.
Corrosion resistant coating and semiconductor processing device
Semiconductor processing devices, particularly etching equipment, in the field of semiconductor device fabrication today typically form surface protective coatings by thermal spraying (Thermal Spray Coating), physical vapor deposition (PVD Coating), chemical vapor deposition (CVD Coating), and the like. At C x F y And H is 2 In the reaction system of the mixed gas, no related equipment is protected by a coating at present.
The common coating is easy to erode and fall off by the process gas in the aspects of corrosion resistance and process control stability under the gas combination environment, thereby influencing the effective service time of the component. According to the invention, by improving the coating on the surface of the component, each component in the reaction cavity has better erosion resistance in the plasma environment in the semiconductor manufacturing process, and the process condition of the reaction cavity is more stable and controllable.
The corrosion-resistant coating provided by the invention can comprise a protective layer directly on the surface (substrate layer) of the coated component, and a corrosion-resistant reinforcing layer on the protective layer.
Specifically, the above-described protective layer may be formed of an alloy compound including two or more metals of alkaline earth metals, aluminum, and transition metals. Wherein the alkaline earth metal can Be one or more of beryllium (Be), magnesium (Mg), calcium (Ca) and strontium (Sr), and preferably magnesium. The transition metal may be one or more of scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu), preferably titanium or vanadium.
According to one embodiment, the alloy compound forming the protective layer may be, for example, an alloy of an alkaline earth metal and aluminum, or an alloy of an alkaline earth metal and a transition metal, or an alloy of aluminum and a transition metal, or an alloy of an alkaline earth metal, aluminum and a transition metal. Specifically, the alloy compound may include 10 to 50% (preferably 15 to 40%) of alkaline earth metal, 10 to 50% (preferably 15 to 35%) of aluminum, and 20 to 50% (preferably 25 to 45%) of transition metal, preferably 10 to 50% (preferably 15 to 40%) of alkaline earth metal, 10 to 50% (preferably 15 to 35%) of aluminum, and 20 to 50% (preferably 25 to 45%) of transition metal, based on the total mass of the alloy compound.
Preferably, the above alloy compounds forming the protective layer may include 20-38% (e.g., 26%,32%, 35%) of magnesium (Mg), 15-35% (e.g., 18%,23%,28%, 32%) of aluminum (Al), and 21-48% (e.g., 26%,30%,35%,40%, 46%) of vanadium (V); or include strontium (Sr) 20-50% (e.g., 25%,31%,37%,42%, 48%), nickel (Ni) 20-50% (e.g., 24%,32%,36%,40%, 45%) and copper (Cu) 10-30% (e.g., 14%,20%,24%, 28%); or 20-50% (e.g., 25%,31%,37%,42%, 48%), 20-50% (e.g., 24%,32%,36%,40%, 45%) of nickel (Ni) and 10-30% (e.g., 14%,20%,24%, 28%) of copper (Cu) of aluminum (Al).
According to one embodiment, the corrosion-resistant enhancement layer is formed of one or more of oxides, fluorides, and oxyfluorides of one or more metals including aluminum, magnesium, and rare earth metals. Preferably, the rare earth metal may be yttrium. Preferably, the corrosion-resistant reinforcing layer is formed of one or more of oxides, fluorides and oxyfluorides of aluminum and yttrium; or formed from one or more of oxides, fluorides and oxyfluorides of yttrium.
According to another embodiment, the corrosion-resistant reinforcing layer may consist of 10-50% (preferably 15-45%, e.g. 20%,23%,27%,30%,35%, 40%) by mass of a metal element, 10-50% (preferably 13-41%, e.g. 17%,22%,25%,30%,33%, 37%) of an oxygen element and 20-50% (preferably 25-45%, e.g. 28%,33%,37%, 42%) of a fluorine element. The content of the metal element herein means the sum of the contents of metals selected from aluminum, magnesium and rare earth metals.
According to one embodiment, the corrosion-resistant enhancement layer may include or consist of 0-50% yttria and 50-100% yttria fluoride.
According to one embodiment, the total thickness of the corrosion-resistant coating may be 50-800 μm (preferably 100-750 μm, e.g. 150 μm,200 μm,250 μm,300 μm,350 μm,400 μm,450 μm,500 μm,550 μm,600 μm,650 μm,700 μm).
Further, the porosity of the corrosion-resistant coating is below 0.1%, and the corrosion-resistant coating has obviously improved film compactness and is beneficial to improving the corrosion resistance of the coating.
Further, the roughness of the above corrosion-resistant coating may be 1 to 7 μm, preferably 2 to 5 μm, for example 3 μm,4 μm.
The corrosion-resistant coating according to the invention has a corrosion time of more than 75 minutes in a 10wt% hydrochloric acid solution at 20-25 ℃. In the invention, the etching time is obtained by the following method: immersing the surface of the sample to be detected in a hydrochloric acid solution with the temperature of 20-25 ℃ and the weight percent of 10%, starting timing, and stopping timing when a large number of bubbles appear in the hydrochloric acid solution or more than three continuous bubbles appear in the same point every second, wherein the immersion time is the corrosion time of the sample to be detected.
The corrosion-resistant layer has significantly improved corrosion resistance, and can be used for ceramic spray heads, nozzles and other components in the reaction cavity of a semiconductor processing device.
FIG. 1 is a schematic cross-sectional view of an etching apparatus to which a corrosion-resistant coating according to one embodiment of the present disclosure may be applied. The etching apparatus may include, among other things, a source electrode 1, an inductor coil 2, a reaction chamber 3, an air inlet nozzle 4, a semiconductor workpiece 5, an electrostatic chuck 6, and a bias power supply 7.
The above-described corrosion-resistant layer of the present invention may be formed on the surface of the air inlet nozzle 4 or the showerhead, or may also be used on the inner wall surface of the reaction chamber 3.
Referring to fig. 2, the corrosion-resistant coating applied to the surface of each component (base layer 10) may include a protective layer 9 and a corrosion-resistant reinforcing layer 8. Fig. 3 shows a 3D profile scan picture of a corrosion resistant coating according to the invention. From the graph, the corrosion-resistant coating has compact surface, low porosity and certain roughness.
The semiconductor processing device with the corrosion-resistant coating can improve the surface characteristics of parts and has improved corrosion resistance, service life and overall production efficiency.
Method for improving corrosion resistance of surface
According to another aspect of the present invention, there is provided a method of improving corrosion resistance of a surface comprising applying the above-described corrosion-resistant coating to a surface of one or more components of a semiconductor processing apparatus.
Specifically, the method for improving the corrosion resistance of the surface comprises the steps of sequentially coating a protective layer and a corrosion-resistant reinforcing layer on the surface of one or more components of the semiconductor processing device.
Referring to fig. 4, the method of improving corrosion resistance of a surface of the present invention according to one embodiment of the present invention includes the following steps.
Step 100: the surface of the component to be treated is pretreated. Pretreatment for this step may be carried out by conventional methods, and may include, for example, steps of blasting, washing, and drying. The pretreated part to be treated is placed in a spray area or fixture for subsequent coating deposition.
Step 110: and depositing a protective layer on the surface of the pretreated part to be treated. The protective layer may be formed of an alloy compound including two or more metals of alkaline earth metals, aluminum, and transition metals. Wherein the alkaline earth metal can Be one or more of beryllium (Be), magnesium (Mg), calcium (Ca) and strontium (Sr), and preferably magnesium. The transition metal may be one or more of scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu), preferably titanium.
According to one embodiment, the alloy compound forming the protective layer may be, for example, an alloy of an alkaline earth metal and aluminum, or an alloy of an alkaline earth metal and a transition metal, or an alloy of aluminum and a transition metal, or an alloy of an alkaline earth metal, aluminum and a transition metal. Specifically, the alloy compound may include 10 to 50% (preferably 15 to 40%) of alkaline earth metal, 10 to 50% (preferably 15 to 35%) of aluminum, and 20 to 50% (preferably 25 to 45%) of transition metal, preferably 10 to 50% (preferably 15 to 40%) of alkaline earth metal, 10 to 50% (preferably 15 to 35%) of aluminum, and 20 to 50% (preferably 25 to 45%) of transition metal, based on the total mass of the alloy compound.
Preferably, the above alloy compounds forming the protective layer may include 20-38% (e.g., 26%,32%, 35%) of magnesium (Mg), 15-35% (e.g., 18%,23%,28%, 32%) of aluminum (Al), and 21-48% (e.g., 26%,30%,35%,40%, 46%) of vanadium (V); or include strontium (Sr) 20-50% (e.g., 25%,31%,37%,42%, 48%), nickel (Ni) 20-50% (e.g., 24%,32%,36%,40%, 45%) and copper (Cu) 10-30% (e.g., 14%,20%,24%, 28%); or 20-50% (e.g., 25%,31%,37%,42%, 48%), 20-50% (e.g., 24%,32%,36%,40%, 45%) of nickel (Ni) and 10-30% (e.g., 14%,20%,24%, 28%) of copper (Cu) of aluminum (Al).
The above protective layer is deposited on the surface of the component by plasma spraying (APS), physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD), atomic Layer Deposition (ALD), or aerosol deposition.
Step 120: and cleaning and drying the surface of the part with the protective layer. This washing and drying step may be carried out in a manner conventional in the art.
Step 130: and depositing a corrosion-resistant reinforcing layer on the surface of the part with the protective layer. The corrosion-resistant reinforcing layer is formed of one or more of metal oxides, fluorides, and oxyfluorides including one or more of aluminum, magnesium, and rare earth metals. Preferably, the rare earth metal may be yttrium. Preferably, the corrosion-resistant reinforcing layer is formed of one or more of oxides, fluorides and oxyfluorides of aluminum and yttrium; or formed from one or more of oxides, fluorides and oxyfluorides of yttrium.
According to another embodiment, the corrosion-resistant reinforcing layer may consist of 10-50% (preferably 15-45%, e.g. 20%,23%,27%,30%,35%, 40%) by mass of a metal element, 10-50% (preferably 13-41%, e.g. 17%,22%,25%,30%,33%, 37%) of an oxygen element and 20-50% (preferably 25-45%, e.g. 28%,33%,37%, 42%) of a fluorine element. The content of the metal element herein means the sum of the contents of aluminum, magnesium and rare earth metals.
According to one embodiment, the corrosion-resistant enhancement layer may include or consist of 0-50% yttria and 50-100% yttria fluoride.
According to another embodiment, the corrosion-resistant enhancement layer may include or consist of 0-50% yttria, and 0-50% yttria.
The corrosion-resistant reinforcing layer is deposited on the surface of the component by plasma spraying (APS), physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD), atomic Layer Deposition (ALD), or aerosol deposition.
According to a preferred embodiment, the protective layer is deposited by plasma spraying (APS) and the corrosion-resistant enhancement layer is deposited by Chemical Vapor Deposition (CVD).
The various deposition methods of the protective layer and corrosion-resistant enhancement layer described above may be performed using deposition conditions commonly used in the art.
According to one embodiment, the total thickness of the above-mentioned corrosion-resistant coating may be 50-800 μm (preferably 100-750 μm, for example 150 μm,200 μm,250 μm,300 μm,350 μm,400 μm,450 μm,500 μm,550 μm,600 μm,650 μm,700 μm).
The corrosion-resistant coating formed by the method and having the composition can change the mechano-electrical-optical properties, repair the surface morphology of the part, have a denser surface structure, have roughness within 1-7 mu m, reduce the porosity and have corrosion resistance of more than 75 minutes in the corrosion resistance test of the invention.
The present invention will be further illustrated by the following examples, but the present invention is not limited thereto.
Examples
Example 1
The surface of the anodic oxidation substrate is subjected to sand blasting, cleaning and drying;
forming a protective layer on the surface of the dried anodic oxidation substrate by a plasma spraying method, wherein the protective layer is made of Mg-Al-V alloy, and the mass percentages of the protective layer and the surface of the dried anodic oxidation substrate are 35%, 21% and 44% respectively;
cleaning and drying the surface of the anodic oxidation substrate with the protective layer;
and forming a corrosion-resistant reinforcing layer on the surface of the dried anodic oxidation substrate by a chemical vapor deposition method, wherein the material of the corrosion-resistant reinforcing layer is yttrium oxide, so as to form a corrosion-resistant coating. The deposition conditions were adjusted so that the thickness of the corrosion-resistant coating was 200 μm (SJ 210). Sample block I was obtained.
The porosity of the corrosion resistant coating was measured to be less than 0.1% (Hitachi TM4000 Plus) and the roughness was measured to be 3-5 μm (Fischer FMP 10).
Fig. 6 shows a surface state picture of a sample block I according to example 1 after immersion in hydrochloric acid.
Comparative example 1
A coupon was prepared in the same manner as in example 1, except that the corrosion-resistant reinforcing layer was not deposited so that the thickness of the protective layer was 200 μm. Sample block II was obtained.
Evaluation of Performance
Experimental example 1
The samples prepared according to example 1 and comparative example 1 were each tested for total thickness, roughness, porosity and hydrochloric acid corrosion resistance time of the coating, and the test results are summarized in table 1 below.
Among them, the Bubble Test method (Bubble Test) of hydrochloric acid corrosion resistance of the corrosion-resistant coating is as follows (see fig. 5):
sample preparation: sample block I: anodic oxidation substrate + protective layer + corrosion resistant reinforcement layer sample block ii: anodic oxidation substrate + protective layer
The experimental process comprises the following steps:
1. preparing a plastic pipe (hydrochloric acid corrosion resistant) with an inner diameter of 18mm, and newly prepared 10wt% hydrochloric acid reagent and a tested sample block;
2. adhering the plastic pipe to the surface of the coating by using sealant;
3. 7ml of freshly prepared 10wt% hydrochloric acid solution was injected and timing started;
4. when a large number of bubbles appear in the hydrochloric acid solution or more than three continuous bubbles appear in the same point per second, the timing is stopped, and the obtained time is the corrosion time.
TABLE 1
Referring to table 1 above and fig. 7, sample block I prepared according to example 1 of the present invention had a porosity of <0.1%, a roughness of 1-2 microns, and a corrosion time of 75 minutes. In contrast, sample block II prepared according to comparative example 1 had a porosity of 3% to 5%, a porosity of greater, a roughness of 3 to 5 microns, a roughness of greater, a corrosion time of shorter 50 minutes, and a corrosion resistance of lower.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps recited in the present disclosure may be performed in parallel, sequentially, or in a different order, provided that the desired results of the disclosed aspects are achieved, and are not limited herein.
The above detailed description should not be taken as limiting the scope of the present disclosure. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions, improvements, etc. that are within the principles of the present disclosure are intended to be included within the scope of the present disclosure.
Claims (16)
1. A corrosion resistant coating for a semiconductor processing apparatus comprising a protective layer and a corrosion resistant enhancement layer;
wherein the corrosion-resistant enhancement layer is formed of one or more of oxides, fluorides, and oxyfluorides of metals including one or more of aluminum, magnesium, and rare earth metals.
2. The corrosion resistant coating of claim 1, the rare earth metal being yttrium.
3. The corrosion-resistant coating according to claim 1 or 2, the corrosion-resistant reinforcing layer being composed of 10 to 50% by mass of a metal element, 10 to 50% by mass of an oxygen element and 20 to 50% by mass of a fluorine element.
4. The corrosion resistant coating of claim 1 or 2 having one or more of the following characteristics:
the total thickness of the corrosion-resistant coating is 50-800 mu m;
the porosity of the corrosion-resistant coating is below 0.1%;
the roughness of the corrosion-resistant coating is 1-7 mu m;
the corrosion-resistant coating has a corrosion time of more than 75 minutes in a 10wt% hydrochloric acid solution at a temperature of 20-25 ℃.
5. The corrosion-resistant coating according to claim 1 or 2, the protective layer being formed of an alloy compound including two or more metals of alkaline earth metals, aluminum, and transition metals.
6. The corrosion resistant coating of claim 5, the alloy compound comprising the following components in mass percent: 10-50% of alkaline earth metal, 10-50% of aluminum and 20-50% of transition metal;
the alkaline earth metal is selected from beryllium, magnesium, calcium and strontium; and is also provided with
The transition metal is selected from scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel and copper.
7. A method of improving corrosion resistance of a surface, comprising sequentially coating a protective layer and a corrosion resistant enhancement layer on a surface of one or more components of a semiconductor processing apparatus to form a corrosion resistant coating;
wherein the corrosion-resistant enhancement layer is formed from one or more of oxides, fluorides, and oxyfluorides of metals including one or more of aluminum, magnesium, and rare earth metals.
8. The method of claim 7, comprising:
depositing a protective layer on the surface of the component by plasma spraying, physical vapor deposition, chemical vapor deposition, atomic layer deposition or aerosol deposition;
a corrosion-resistant reinforcing layer is deposited on the surface of the part having the protective layer by a plasma spraying method, a physical vapor deposition method, a chemical vapor deposition method, an atomic layer deposition method, or an aerosol deposition method.
9. The method of claim 8, wherein the protective layer is deposited by plasma spraying and the corrosion-resistant enhancement layer is deposited by chemical vapor deposition.
10. The method of any one of claims 7 to 9, further comprising pre-treating the surface of the component in advance including sandblasting, cleaning and drying.
11. The method of any one of claims 7 to 9, the rare earth metal being yttrium.
12. The method according to any one of claims 7 to 9, consisting of 10-50% by mass of metallic elements, 10-50% by mass of oxygen elements and 20-50% by mass of fluorine elements by the corrosion-resistant reinforcing layer.
13. The method of claim 12, the corrosion resistant coating having one or more of the following characteristics:
the total thickness of the corrosion-resistant coating is 50-800 mu m;
the porosity of the corrosion-resistant coating is below 0.1%;
the roughness of the corrosion-resistant coating is 1-7 mu m;
the corrosion-resistant coating has a corrosion time of more than 75 minutes in a 10wt% hydrochloric acid solution at a temperature of 20-25 ℃.
14. The method according to any one of claims 7 to 9, the protective layer being formed of an alloy compound including two or more metals of alkaline earth metals, aluminum, and transition metals.
15. The method of claim 14, the alloy compound comprising the following components in mass percent: 10-50% of alkaline earth metal, 10-50% of aluminum and 20-50% of transition metal;
the alkaline earth metal is selected from beryllium, magnesium, calcium and strontium; and is also provided with
The transition metal is selected from scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel and copper.
16. A semiconductor processing apparatus comprising one or more components having a surface with a corrosion resistant coating according to any one of claims 1-6.
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