CN117054704A - Probe card - Google Patents
Probe card Download PDFInfo
- Publication number
- CN117054704A CN117054704A CN202210485536.1A CN202210485536A CN117054704A CN 117054704 A CN117054704 A CN 117054704A CN 202210485536 A CN202210485536 A CN 202210485536A CN 117054704 A CN117054704 A CN 117054704A
- Authority
- CN
- China
- Prior art keywords
- layer
- shielding structure
- electromagnetic
- probe card
- shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 49
- 239000010410 layer Substances 0.000 claims abstract description 86
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000010521 absorption reaction Methods 0.000 claims abstract description 5
- 230000000149 penetrating effect Effects 0.000 claims abstract description 5
- 239000002356 single layer Substances 0.000 claims abstract description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000011358 absorbing material Substances 0.000 claims description 10
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- 241000627951 Osteobrama cotio Species 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 229910000428 cobalt oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06755—Material aspects
- G01R1/06761—Material aspects related to layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention relates to a probe card. The probe card includes a guide plate and a single-layer or multi-layer shielding structure. The guide plate comprises an upper surface, a lower surface and at least one guide hole penetrating between the upper surface and the lower surface, wherein the guide hole is provided with an inner wall surface. At least one layer of the shielding structure is made of electromagnetic absorption material or electromagnetic reflection material and is not connected to the ground, and each layer of the shielding structure is formed on the inner wall surface of the guide hole by an atomic layer deposition method or an atomic layer etching method and has the thickness of less than 1000nm respectively.
Description
Technical Field
The present invention relates to an integrated circuit testing device, and more particularly, to a probe card.
Background
In integrated circuit testing methods, probing is a common method, and in testing devices used to perform probing, a probe card is one of the most critical components. However, as the pitch of the contact points on the integrated circuit is gradually reduced, the pitch of the probes is also reduced, which causes signals between the probes to interfere with each other during the inspection of the integrated circuit, thereby affecting the measurement result.
In order to improve the signal interference, the prior art can be seen from patent nos. TW I574013B, TW I411785B, and US8692570B2, in which the insulating layer and the shielding layer are coated on the outer surface of the metal probe to achieve the shielding effect, however, since each probe needs to be coated with the insulating layer and the shielding layer, the time and the labor are wasted, the production cost is high, the cost of replacing the probe is increased when the probe is faulty or damaged, and the accuracy of the probe is affected and the probability of damaging the probe is increased by coating the insulating layer and the shielding layer on the outer surface of each probe.
On the other hand, the shielding layer of the existing probe card is made of a common metal material, and the shielding layer needs to be further connected to the ground to achieve the shielding effect, however, the ground needs additional circuits and circuits, which also increases the complexity of manufacturing and overall structure.
Therefore, it is a problem to be solved by those skilled in the art how to simplify the structure and the production process of the probe card and achieve the shielding effect.
Disclosure of Invention
The invention aims to solve the problems of complex process and high cost caused by the fact that shielding structures are required to be respectively deposited on all probes in the conventional probe card with the shielding function and extra circuits and circuits are required due to grounding.
In order to achieve the above object, the present invention provides a probe card, which includes a guide plate and a single-layer or multi-layer shielding structure. The guide plate comprises an upper surface, a lower surface and at least one guide hole penetrating between the upper surface and the lower surface, wherein the guide hole is provided with an inner wall surface. At least one layer of the shielding structure is made of an electromagnetic absorption material or an electromagnetic reflection material and is not connected to the ground, and each layer of the shielding structure is formed on the inner wall surface of the guide hole by an atomic layer deposition method or an atomic layer etching method and has the thickness of less than 1000nm respectively.
In one embodiment, the electromagnetic absorbing material is aluminum, tungsten, platinum, titanium, gold, iron, or cobalt nickel alloy.
In one embodiment, the electromagnetic reflective material is silicon nitride (SiN), aluminum nitride (AlN), titanium nitride (TiN), tantalum nitride (TaN), cobalt oxide (CoO), nickel oxide(NiO), iron oxide (Fe) 2 O 3 ) Or CoTiO 2 。
In one embodiment, the electromagnetic absorbing material or the electromagnetic reflecting material is not connected to ground.
In one embodiment, the shielding structure further comprises at least one layer of insulating material.
The invention also provides a probe card, which comprises a guide plate and a multi-layer shielding structure. The guide plate comprises an upper surface, a lower surface and at least one guide hole penetrating between the upper surface and the lower surface, wherein the guide hole is provided with an inner wall surface. The shielding structure comprises a first layer deposited on the inner wall surface, a shielding layer deposited on the first layer and a second layer deposited on the shielding layer, wherein the shielding layer is made of an electromagnetic absorption material or an electromagnetic reflection material, the first layer and the second layer are made of the same or different insulating materials, the layers of the shielding structure are not connected to the ground, and the layers of the shielding structure are respectively formed by an atomic layer deposition method or an atomic layer etching method and have the thickness of less than 1000nm.
Drawings
Fig. 1 is a schematic perspective view of a probe card according to an embodiment of the invention.
Fig. 2 is a partially enlarged perspective view of a probe card according to an embodiment of the invention.
Fig. 3 is a schematic cross-sectional view of fig. 2 along A-A.
Fig. 4 is a schematic top view of fig. 2.
Detailed Description
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
Directional terms used herein, such as up, down, left, right, front, rear and derivatives or synonyms thereof, relate to the orientation of the components in the figures and are not limiting upon the invention unless the context clearly dictates otherwise.
The detailed description and technical content of the present invention will now be described with reference to the drawings, in which:
referring to fig. 1 to 4, the present invention discloses a probe card, and more particularly, to a probe card having shielding function without grounding and without forming a shielding layer on each probe, which includes a guide plate 10 and at least one shielding structure 20. The guide plate 10 includes an upper surface 11, a lower surface 12, and at least one guide hole 13, wherein the guide hole 13 penetrates the upper surface 11 and the lower surface 12 to provide at least one probe (not shown) to penetrate therethrough, and the guide hole 13 includes an inner wall surface 131. The guide holes 13 may be arranged on the guide plate 10 according to an array or a pattern according to the application requirements. In this embodiment, a cross section of the guiding hole 13 is circular, and in other embodiments, the cross section of the guiding hole 13 may be other shapes, such as triangle, square, pentagon, or other polygons.
In the present invention, the shielding structure 20 may be a single layer or multiple layers, and each layer of the shielding structure 20 is formed on the inner wall surface 131 of the guide hole 13 by an atomic layer deposition (Atomic Layer Deposition, ALD) or an atomic layer etching (Atomic Layer Etching, ALE), and each layer has a thickness of less than 1000nm, so that an extremely thin and uniform multi-layer film can be generated in the tiny guide hole 13 by the atomic layer deposition or the atomic layer etching, but not deposited on the probe. At least one layer of the shielding structure 20 is an electromagnetic absorbing material or an electromagnetic reflecting material, and in addition to the electromagnetic absorbing material and the electromagnetic reflecting material, in some embodiments, the shielding structure 20 may further include at least one layer of insulating material formed by deposition of a material with better insulation (lower dielectric constant). The shielding structure 20 of the present invention is not connected to ground, and further, in one embodiment, the layers of the shielding structure 20 are not connected to ground. On the other hand, the shielding structure 20 is directly deposited in the guide hole 13, so that the invention can be completed by only one-time processing without plating each probe with the shielding structure.
The electromagnetic absorbing material may be a conductive metal or alloy, for example, aluminum, tungsten, platinum, titanium, gold, iron or cobalt nickel alloy; the method comprisesThe electromagnetic reflective material may be oxide or nitride, for example, silicon nitride (SiN), aluminum nitride (AlN), titanium nitride (TiN), tantalum nitride (TaN), cobalt oxide (CoO), nickel oxide (NiO), iron oxide (Fe) 2 O 3 )、CoTiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The insulating material may be an oxide, such as alumina (Al 2 O 3 ) Or silicon oxide (SiO) 2 )。
In some embodiments, the shielding structure 20 may be or include Al 2 O 3 /CoO/Al 2 O 3 Multi-layer structure of (C), al 2 O 3 /AlN/Al 2 O 3 Multilayer structure of AlN/Al 2 O 3 /Fe 2 O 3 /AlN/Al 2 O 3 Multilayer structure of SiN/SiO 2 Or SiN/SiO 2 /AlN/SiO 2 Is a multi-layer structure of (2); also in some embodiments, the shielding structure 20 may be a plurality of layers of the aforementioned multi-layer structure, such as Al 2 O 3 /CoO/Al 2 O 3 /Al 2 O 3 /CoO/Al 2 O 3 /Al 2 O 3 /CoO/Al 2 O 3 、SiN/SiO 2 /SiN/SiO 2 /SiN/SiO 2 Etc. It will be appreciated that the aforementioned multilayer structure comprises at least one layer of the electromagnetic absorbing material or the electromagnetic reflecting material, and optionally at least one layer of the insulating material.
Referring to fig. 3 and 4, in the present embodiment, the shielding structure 20 is a three-layer structure and is disposed on the inner wall surface 131 of the guiding hole 13, the shielding structure 20 includes a first layer 21, a shielding layer 22 and a second layer 23, the first layer 21 and the second layer 23 are made of different or the same insulating materials, and the shielding layer 22 is made of the electromagnetic absorbing material and the electromagnetic reflecting material. The first layer 21 is deposited on the inner wall surface 131, the shielding layer 22 is deposited on the first layer 21, and the second layer 23 is deposited on the shielding layer 22. That is, the first layer 21, the shielding layer 22 and the second layer 23 are sequentially deposited from the inner wall surface 131 toward the center of the guide hole 13. In operation, the probe is inserted into the second layer 23, and the first layer 21, the shielding layer 22 and the second layer 23 surround the probe, so that the probe is not easily distorted by interference (coupling) of adjacent probes when transmitting test signals, the integrity of the test signals is better, and the electrical property of the integrated circuit can be accurately measured.
In one embodiment, the diameter of the guiding hole 13 is smaller than 1mm, the diameter of the probe is smaller than 50 μm, the thicknesses of the first layer 21, the shielding layer 22 and the second layer 23 are respectively smaller than 1000nm, in one embodiment, the thicknesses are respectively smaller than 500nm, and in some embodiments, the thicknesses are respectively between 100nm and 500 nm. By controlling the diameter of the guide hole 13 and the thickness of the shielding structure 20, the probes can be placed in the guide hole 13 without contacting the second layer 23, so as to avoid damaging the shielding structure 20 when mounting the probes, and the accuracy of measurement is affected, and the smaller diameter of the guide hole 13 can enable the probes to be more densely arranged on the guide plate 10. The shielding structure 20 can generate internal reflection of electromagnetic wave by the three-layer structure so as to reduce the intensity of electromagnetic wave.
In summary, by the structure and material selection of the shielding structure 20 of the present invention, the shielding structure 20 is not connected to the ground, such as a ground circuit or a ground potential, so as to simplify the overall structure. And the shielding structure can be deposited in the guide holes of the tiny probe card by utilizing an atomic layer deposition (or atomic layer etching) technology, the shielding structure can be deposited in all the guide holes only by one deposition, each probe does not need to be deposited with the shielding structure, the deposition process can be saved, and the cost for replacing the probe can be reduced. In addition, the invention can reduce the problem of signal interference when the probe detects the semiconductor component by utilizing the arrangement of the shielding structure, thereby improving the validity of the detection value and being suitable for the semiconductor device with high-density endpoints.
Claims (8)
1. A probe card, comprising:
the guide plate comprises an upper surface, a lower surface and at least one guide hole penetrating between the upper surface and the lower surface, wherein the guide hole is provided with an inner wall surface; and
and the shielding structure is of a single-layer or multi-layer shielding structure, at least one layer of the shielding structure is made of electromagnetic absorption material or electromagnetic reflection material, the shielding structure is not connected to the ground, and each layer of the shielding structure is formed on the inner wall surface of the guide hole by an atomic layer deposition method or an atomic layer etching method and has the thickness of less than 1000 nanometers respectively.
2. The probe card of claim 1, wherein the electromagnetic absorbing material is aluminum, tungsten, platinum, titanium, gold, iron, or cobalt nickel alloy.
3. The probe card of claim 1, wherein the electromagnetic reflective material is silicon nitride, aluminum nitride, titanium nitride, tantalum nitride, cobalt monoxide, nickel oxide, iron oxide, or CoTiO 2 。
4. The probe card of claim 1, wherein the electromagnetic absorbing material or the electromagnetic reflecting material is not connected to ground.
5. The probe card of claim 1, wherein the shielding structure further comprises at least one layer of insulating material.
6. A probe card, comprising:
the guide plate comprises an upper surface, a lower surface and at least one guide hole penetrating between the upper surface and the lower surface, wherein the guide hole is provided with an inner wall surface; and
the shielding structure comprises a first layer deposited on the inner wall surface, a shielding layer deposited on the first layer and a second layer deposited on the shielding layer, wherein the shielding layer is made of electromagnetic absorption material or electromagnetic reflection material, the first layer and the second layer are made of the same or different insulating materials, each layer of the shielding structure is not connected to the ground, and each layer of the shielding structure is formed by an atomic layer deposition method or an atomic layer etching method and has the thickness of less than 1000 nanometers.
7. The probe card of claim 6, wherein the electromagnetic absorbing material is aluminum, tungsten, platinum, titanium, gold, iron, or cobalt nickel alloy.
8. The probe card of claim 6, wherein the electromagnetic reflective material is silicon nitride, aluminum nitride, titanium nitride, tantalum nitride, cobalt monoxide, nickel oxide, iron oxide, or CoTiO 2 。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210485536.1A CN117054704A (en) | 2022-05-06 | 2022-05-06 | Probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210485536.1A CN117054704A (en) | 2022-05-06 | 2022-05-06 | Probe card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117054704A true CN117054704A (en) | 2023-11-14 |
Family
ID=88665011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210485536.1A Pending CN117054704A (en) | 2022-05-06 | 2022-05-06 | Probe card |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117054704A (en) |
-
2022
- 2022-05-06 CN CN202210485536.1A patent/CN117054704A/en active Pending
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