CN116864595A - Light-emitting element and light-emitting device thereof - Google Patents
Light-emitting element and light-emitting device thereof Download PDFInfo
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- CN116864595A CN116864595A CN202310641532.2A CN202310641532A CN116864595A CN 116864595 A CN116864595 A CN 116864595A CN 202310641532 A CN202310641532 A CN 202310641532A CN 116864595 A CN116864595 A CN 116864595A
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- emitting device
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- 239000004065 semiconductor Substances 0.000 claims abstract description 76
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 239000004593 Epoxy Substances 0.000 claims description 2
- 235000015250 liver sausages Nutrition 0.000 claims description 2
- 238000001338 self-assembly Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 133
- 239000000463 material Substances 0.000 description 29
- 239000004020 conductor Substances 0.000 description 20
- 239000011162 core material Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000005083 Zinc sulfide Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical group [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- -1 alkaline earth metal selenide Chemical class 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- VUFGUVLLDPOSBC-XRZFDKQNSA-M cephalothin sodium Chemical compound [Na+].N([C@H]1[C@@H]2N(C1=O)C(=C(CS2)COC(=O)C)C([O-])=O)C(=O)CC1=CC=CS1 VUFGUVLLDPOSBC-XRZFDKQNSA-M 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 description 1
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 description 1
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The application discloses a light-emitting element and a light-emitting device thereof, wherein the light-emitting device comprises a carrier plate, an electrical contact arranged on the carrier plate, a semiconductor lamination layer and an electrode electrically connected with the semiconductor lamination layer (semiconductor stack) and the electrical contact.
Description
The application relates to a Chinese patent application (application number: 201811590280.0, application date: 2018, 12, 25, title: a light-emitting element and light-emitting device thereof).
Technical Field
The present application relates to a light emitting device, and more particularly, to a light emitting device including a pair of electrodes symmetrical to each other.
Background
Light-emitting diodes (LEDs) are increasingly replacing conventional incandescent and fluorescent lamps in various lighting applications because of their energy saving, long life, small size, and other advantages.
The led may be further attached to a carrier by a conductive material such as solder to form a light-emitting device (light-emitting device). However, in the process of assembling and connecting, the light emitting diode located on the conductive material may be pulled by the flowing conductive material to generate displacement due to the flowing phenomenon of the conductive material in the curing process, so that the light emitting diode cannot be combined to a correct position.
The aforementioned light emitting device may comprise a primary carrier (sub-mount); a solder (binder) on the sub-carrier, the solder being used to bond the light emitting diode to the sub-carrier and to electrically connect the light emitting diode to the circuitry on the sub-carrier; the sub-carrier may be a lead frame (lead frame) or a large-sized damascene substrate (mounting substrate).
Disclosure of Invention
The application discloses a light-emitting device, which comprises a light-emitting element, a carrier plate, a first contact and a second contact. The light-emitting element comprises a first electrode and a second electrode. The first contact is arranged on the carrier plate and is electrically connected with the first electrode, and the second contact is arranged on the carrier plate and is electrically connected with the second electrode. The first contact is similar in contour to the first electrode and the second contact is similar in contour to the second electrode.
The application discloses a light-emitting device, which comprises a light-emitting element, a carrier plate, a first contact and a second contact. The light-emitting element comprises a first electrode and a second electrode surrounded by the first electrode.
The first electrode has a first contour and the second electrode has a second contour different from the first contour. The first contact is arranged on the carrier plate and electrically connected with the first electrode, the second contact is arranged on the carrier plate and electrically connected with the second electrode, and the second contact has a third contour.
The application discloses a light-emitting device, which comprises a light-emitting element, a carrier plate, a first contact and a second contact. The light-emitting element comprises a first electrode and a second electrode which has a first contour and is surrounded by the first electrode. The first contact is arranged on the carrier plate and is electrically connected with the first electrode, and the second contact with the second contour is arranged on the carrier plate and is electrically connected with the second electrode.
Drawings
FIG. 1 is a side view of a light emitting device according to an embodiment of the present application;
FIG. 2 is a bottom view of the light emitting device of FIG. 1;
FIG. 3 is a side view of a lighting device according to an embodiment of the present application;
FIG. 4 is a top view of the carrier plate of FIG. 3;
FIG. 5 is a cross-sectional view of a light-emitting device according to an embodiment of the present application;
FIG. 6 is a bottom view of the light emitting device of FIG. 5;
FIG. 7 is a cross-sectional view of a light emitting device according to an embodiment of the present application;
FIG. 8 is a top view of the carrier plate of FIG. 7;
FIG. 9 is a cross-sectional view of a light-emitting device according to an embodiment of the present application;
FIG. 10 is a top view of the light emitting element of FIG. 9;
FIG. 11 is a cross-sectional view of a light emitting device according to an embodiment of the present application;
FIG. 12 is a top view of the carrier plate of FIG. 11;
FIG. 13 is a bottom view of a light emitting device according to an embodiment of the present application;
fig. 14 is a cross-sectional view of a light emitting device according to an embodiment of the present application.
Symbol description
10. 20, 30': a light emitting element;
1000. 2000, 3000, 4000: a light emitting device;
2: a semiconductor stack (semiconductor stack);
201. 203: a semiconductor layer;
202: a light emitting layer;
81: a groove portion;
40. 42, 60, 62, 80, 82: an electrode;
6: an electrode section;
61. 610, 810: an insulating part;
204. 300, 301: a carrier plate;
101. 102, 103, 104, 105, 106, 107: a conductive layer;
400. 420, 600, 620, 800, 820: contacting;
A. b, 107A, 107B, 107C: a region;
l0 and L1: a virtual line;
c1, C2, C3, C4: a center;
r1, R2, R3, R4, R5, R6, R7, R8: radius;
Detailed Description
Fig. 1 is a side view of a light emitting device according to an embodiment of the present application. Referring to fig. 1, the light emitting element 10 includes a semiconductor stack (semiconductor stack) 2, a first electrode 40 and a second electrode 42, and the first electrode 40 and the second electrode 42 are physically separated from each other, not in contact with each other, and may overlap each other (but are separated by an insulating layer) or not. In one embodiment, an insulating portion is formed between the first electrode 40 and the second electrode 42. The semiconductor stack (semiconductor stack) 2 comprises a first semiconductor layer (not shown) of a first conductivity type, a second semiconductor layer (not shown) of a second conductivity type, and a light emitting layer (not shown) disposed between the first semiconductor layer and the second semiconductor layer, wherein the light emitting layer emits a non-coherent light. The first semiconductor layer is electrically connected to the first electrode 40, and the second semiconductor layer is electrically connected to the second electrode 42.
The first semiconductor layer of the first conductivity and the second semiconductor layer of the second conductivity may serve as a capping layer or a confinement layer (confinement layer), respectively, to provide electrons (electrons) and holes (holes) combined in the light emitting layer to emit light. The constituent material of the first semiconductor layer of the first conductivity, the second semiconductor layer of the second conductivity and/or the light emitting layer may comprise a III-V semiconductor material, such as Al x In y Ga (1-x-y) N or Al x In y Ga (1-x-y) P, wherein 0 is less than or equal to x and y is less than or equal to 1; (x+y) is less than or equal to 1. Depending on the material of the light emitting layer, the light emitting element 10 may emit red light having a peak wavelength between 610nm and 650nm, green light having a peak wavelength between 530nm and 570nm, or blue light having a peak wavelength between 450nm and 490 nm.
The electrodes 40, 42 are composed of a metallic material, such as titanium, nickel, gold, platinum or aluminum. In one embodiment, the electrodes 40, 42 are titanium/aluminum/nickel/gold, titanium/aluminum/nickel/gold, or titanium/platinum/aluminum/nickel/gold, with the lowermost layer being gold for direct contact with external components.
The light emitting element 10 may further include a wavelength conversion material (not shown) covering the semiconductor stack (semiconductor stack) 2, wherein the wavelength conversion material may absorb a first light emitted by the semiconductor stack (semiconductor stack) 2 and convert the first light into a second light having a peak wavelength or a dominant wavelength different from the first light. The wavelength conversion material comprises a quantum dot material, yellow-green phosphor, red phosphor or blue phosphor. The yellow-green phosphor comprises YAG, TAG, silicate, vanadate, alkaline earth metal selenide, or metal nitride. The red phosphor includes fluoride (e.g., K 2 TiF 6 ：Mn 4+ Or K 2 SiF 6 ：Mn 4+ ) Silicate, vanadate, alkaline earth metal sulfide, metal oxynitride, or a mixture of tungstate and molybdate. The blue fluorescent powder comprises BaMgAl 10 O 17 ：Eu 2+ . In one embodiment, the first light ray and the second light ray are mixed into white light, and the white light has a color point coordinate (x, y) in a CIE1931 chromaticity diagram, wherein x is more than or equal to 0.27 and less than or equal to 0.285; y is more than or equal to 0.23 and less than or equal to 0.26. In one embodiment, white light has a color Wen Jieyu-6500K (e.g., 2200K, 2400K, 2700K, 3000K, 5700K, 6500K) and a color point coordinate (x, y) in the CIE1931 chromaticity diagram within a 7-step MacAdam ellipse (MacAdam elipse). In one embodiment, the first light and the second light are mixed to form a non-white light, such as red light, amber light, purple light or yellow light. In one embodiment, the first light may be substantially or mostly divertedAnd is replaced by a second light.
The quantum dot material may be composed of a core (core) and a shell (shell). The core and the shell may be respectively composed of different semiconductor materials, wherein the material of the shell has a higher energy barrier than the material of the core, so that the material of the core can be reduced from dissipating excessive electrons in the process of repeatedly emitting light, and the brightness attenuation of the quantum dot material can be reduced. The core material may be selected from the group consisting of zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), zinc oxide (ZnO), cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), gallium nitride (GaN), gallium phosphide (GaP), gallium selenide (GaSe), gallium antimonide (GaSb), gallium arsenide (GaAs), aluminum nitride (AlN), aluminum phosphide (AlP), aluminum arsenide (AlAs), indium phosphide (InP), indium arsenide (InAs), tellurium (Te), lead sulfide (PbS), indium antimonide (InSb), lead telluride (PbTe), lead selenide (PbSe), antimony telluride (SbTe), zinc cadmium selenide (ZnCdSe), zinc cadmium sulfide (ZnCdSeS), and copper indium sulfide (CuInS). The materials of the shell and the core must be matched to each other (e.g., the lattice constants of the materials of the core and shell need to be matched). Specifically, the material composition of the shell is selected to form a high barrier region around the periphery of the core to enhance quantum yield (quantum yield), in addition to matching the lattice constant of the material of the core. In order to be able to meet both properties simultaneously, the stresses in the core region and the shell can be reduced on the one hand and the barrier can be raised on the other hand by changing the structure and/or the composition of the shell. The shell structure may be a single layer, multiple layers, or a graded material composition structure. In one embodiment, the core is cadmium selenide and the shell is a single layer of zinc sulfide. In another embodiment, the core is cadmium selenide and the outer shell comprises an inner layer of (cadmium, zinc) (sulfur, selenium) and an outer layer of zinc sulfide. In another embodiment, the core is cadmium selenide, the shell comprises cadmium sulfide in the inner layer, zn in the middle graded layer 0.25 Cd 0.75 S/Zn 0.5 Cd 0.5 S/Zn 0.75 Cd 0.25 S, zinc sulfide of the outer layer.
The light emitting device 10 may further comprise a carrier board, which may be used to carry or support the light emitting layer. In one embodiment, the carrier is a substrate for epitaxial growth (epi) and the substrate is made of sapphire (sapphire), gallium nitride, silicon carbide, etc., and is suitable for forming (e.g., epitaxial growth technology) a semiconductor material on which a light emitting layer can be formed. In another embodiment, the carrier is not a growth substrate for directly forming the light emitting layer, but another supporting member (such as a material, a composition, or a structure having a shape different from that of the growth substrate) for replacing or supporting the growth substrate.
Fig. 2 is a bottom view of the light emitting device 10 of fig. 1, in which the first electrode 40 and the second electrode 42 are similar in shape and are bilaterally symmetrical with respect to a virtual line L0, and the first electrode 40 and the second electrode 42 do not overlap the virtual line L0. The virtual line L0 is a virtual line for schematic purposes, and is not a specific line segment visible to the naked eye on the light emitting element 10, and the virtual line L0 in the figure overlaps with the geometric center (not shown) of the light emitting element 10. Referring to fig. 2, the semiconductor stack (semiconductor stack) 2 and the internal light emitting layer (not shown) have a square profile, which can be used to provide a light field having a square profile. In one embodiment, the shortest distance between the first electrode 40 and the second electrode 42 is greater than 150 μm.
Fig. 3 is a side view of a light emitting device according to an embodiment of the present application. Referring to fig. 3, the light emitting device 1000 includes a semiconductor stack (semiconductor stack) 2, a first electrode 40 and a second electrode 42, conductive layers 101 and 102, a first contact 400, a second contact 420, and a carrier 300. The carrier 300 includes a circuit (not shown) electrically connected to the first electrode 40 and the second electrode 42, so that an external power source can provide power through the circuit to emit light from the light emitting device 1000 via the conductive layers 101 and 102 and the electrodes 40 and 42. Referring to fig. 4, fig. 4 shows the relative positions of the carrier 300 and the conductive layers 101 and 102 thereon in fig. 3, and the semiconductor stack (semiconductor stack) 2, the first electrode 40 and the second electrode 42 are omitted. The first contact 400 and the second contact 420 are formed on the upper surface of the carrier 300 and are electrically connected to the semiconductor stack (semiconductor stack) 2 by the conductive layers 101, 102. The conductive layers 101, 102 over the first contact 400 and the second contact 420 may have different profiles and be formed over the first contact 400 and the second contact 420 in an asymmetric manner (with respect to the virtual line L0). The first contact 400 and the second contact 420 are similar in shape and are bilaterally symmetrical with each other with respect to a virtual line L0, and the first contact 400 and the second contact 420 do not overlap the virtual line L0. The first contact 400 is similar in contour to the first electrode 40 and the second contact 420 is similar in contour to the second electrode 42. The first contact 400 and the second contact 420 may be electrically connected to a circuit (not shown) on the carrier plate 300. The conductive layer 101 electrically connects the first electrode 40 and the first contact 400, and the conductive layer 102 electrically connects the second electrode 42 and the second contact 420, and the semiconductor stack (semiconductor stack) 2 is fixed on the carrier 300. It is noted that the conductive layers 101, 102 contact the first contact 400 and the second contact 420 on the carrier 300 and the area of the carrier 300 not covered by the first contact 400 or the second contact 420. The bonding force between the conductive layers 101, 102 and the first contact 400 and the second contact 420 is stronger than the bonding force between the conductive layers 101, 102 and the upper surface of the carrier 300 in the area where either the first contact 400 or the second contact 420 is absent. The good adhesion between the conductive layers and the contacts can prevent the conductive layers 101, 102 from gathering in large amounts on the carrier 300 during the manufacturing process in areas where the first contact 400 or the second contact 420 is not present, but instead, the conductive layers 101, 102 are not present on the first contact 400 or the second contact 420, which may cause a circuit break between the semiconductor stack (semiconductor stack) 2 and the circuitry of the carrier 300. In addition, the good adhesion can also prevent the conductive layers 101 and 102 from peeling off from the surfaces of the first contact 400, the second contact 420 or the carrier 300, so as to prevent the light emitting element 10 and the conductive layers 101 and 102 from being separated from the carrier 300. In an embodiment, the shortest distance between the first contact 400 and the second contact 420 is greater than 150 μm.
Fig. 4 is a top view of the carrier 300 in fig. 3, and referring to fig. 4, the first contact 400 (the second contact 420) is composed of a branch (region a), and a body (e.g., region B). During fabrication, a conductive material, which may be solder or other adhesive material having conductive properties, is applied over the first contact 400 and the second contact 420. The light emitting device 10 is pressed down and fixed on the first contact 400 and the second contact 420, and the conductive material is fixed to form the conductive layers 101 and 102. During the pressing, the conductive material flows over the first contact 400 and the second contact 420 due to the non-uniform amount of the conductive material covered over the first contact 400 and the second contact 420, the difference in roughness between the first contact 400 and the second contact 420, or the non-uniform force applied to the first contact 400 and the second contact 420 during the pressing, so that the conductive layers 101 and 102 have different shapes as shown in fig. 4. Therefore, the present application utilizes the characteristic that the bonding force between the conductive material and the first contact 400 and the second contact 420 is greater than the bonding force between the conductive material and the carrier plate 300, and designs the first contact 400 and the second contact 420 to have a structure with a region B and a region a, so that the conductive material mainly flows to the region a or the region B with the same material and a larger bonding force relative to the surface of the carrier plate 300 in the pressing process, avoiding the situation that the conductive material flows around (for example, flows over the carrier plate 300 without the first contact 400 and the second contact 420), and the conductive material can remain between the electrodes 40 and 42 on the first contact 400 and the second contact 420.
In addition, it is noted that the maximum width of the branches (e.g., region a) in the first contact 400 and the second contact 420 is smaller than the maximum width of the body (e.g., region B). Such that the branches attract less conductive material than the main body, thereby avoiding the conductive material from also shorting through the branches while contacting both contacts 400, 420. Meanwhile, even if the light emitting element 10 moves in position due to the flow of the conductive layer material during the manufacturing process, it is not easy to cause a short circuit by simultaneously electrically connecting the first contact 400 and the second contact 420 to the same electrode 40 or 42 on the light emitting element 10 due to excessive conductive material.
The conductive material may be solder (holder) or anisotropic conductive paste (Anisotropic Conductive Paste; ACP). The anisotropic conductive adhesive includes conductive adhesive materials such as adhesive containing micro tin balls or ultra-micro array anisotropic conductive adhesive (ultra-fine pitch fixed array ACP). The adhesive containing the micro solder balls can be PAL-ACF (part-aligned anisotropic conductive film), ACF (Anisotropic Conductive film), SAP (Self Assembly Anisotropic Conductive Paste) or epoxy solder pate.
Fig. 5 is a cross-sectional view of a light-emitting element according to an embodiment of the present application. The light emitting device 20 includes a semiconductor stack (semiconductor stack) 2 and an electrode portion 6, the electrode portion 6 includes a first electrode 60, a second electrode 62, and a first insulating portion 61 between the first electrode 60 and the second electrode 62, and details of the semiconductor stack (semiconductor stack) 2 are referred to in the related paragraphs of the foregoing embodiments, so that description is not repeated for brevity. The electrode portion 6 protrudes above the semiconductor stack (semiconductor stack) 2 and has a substantially flat surface on a side remote from the semiconductor stack (semiconductor stack) 2. Fig. 6 is a bottom view of the light emitting element of fig. 5. Referring to fig. 6, the electrode part 6 has a square outline, and the second electrode 62 and the first insulating part 61 surrounding the second electrode 62 form a concentric circle structure. The concentric circle structure has a center C1 in the plan view of fig. 6. The first electrode 60, the first insulating portion 61 and the second electrode 62 all protrude from the semiconductor stack (semiconductor stack) 2 and all have the same height and a substantially flush outermost surface for electrically connecting other elements. The center C1 of the second electrode 62 substantially overlaps the geometric center of the light emitting element 20, and the second electrode 62 has a radius R1, and the insulating portion 61 has a radius R2 from the center C1. The first electrode 60 and the second electrode 62 are physically separated from each other, do not contact each other, and do not overlap each other by the first insulating portion 61, and are each electrically connected to semiconductor layers of different electrical properties within the semiconductor stack (semiconductor stack). The first insulating portion 61 surrounds the second electrode 62 and has the same contour as the second electrode 62. In one embodiment, the first insulating portion 61 and the second electrode 62 have similar contours, such as a circle or an ellipse. In other embodiments, the first insulating portion 61 and the second electrode 62 may have a quadrilateral, triangular, polygonal or a closed curve. Referring to fig. 6, the profile of the first electrode 60 is similar to the semiconductor stack (semiconductor stack) 2, and the outermost edge of the first electrode 60 does not overlap the outermost edge of the semiconductor stack (semiconductor stack) 2. The light emitting element 20 has a square outline, and the semiconductor stack (semiconductor stack) 2 and a light emitting layer (not shown) therein have the same outline as the light emitting element 20. That is, the semiconductor stack (semiconductor stack) 2 has a square outline, and the light emitting layer (not shown) also has a square outline. In one embodiment, the narrowest width of the first insulating portion 61 is greater than 150 μm, so as to avoid short circuit caused by overlapping of the electrodes 60 and 62 during the process of manufacturing the first electrode 60 and the second electrode 62.
The material of the insulating portion 61 may be oxide, nitride or polymer. The oxide comprises silicon oxide (SiO x ) Titanium oxide (TiO) x ) Tantalum oxide (TaO) x ) Or alumina (AlO) x ). The nitride includes aluminum nitride (AlN) x ) Or silicon nitride (SiN) x ). The polymer comprises polyimide or benzocyclobutane (BCB). In another embodiment, the insulating portion 61 includes a plurality of sub-layers of low refractive index layers and high refractive index layers repeatedly stacked to form a Bragg reflection layer (DBR).
Fig. 7 is a cross-sectional view of a light emitting device according to an embodiment of the present application. Fig. 8 is a top view of the carrier 300 of fig. 7. In fig. 7, the light emitting device 2000 includes a light emitting element 20 fixedly connected to a carrier 300 through a conductive layer 103. Referring to fig. 8, the carrier 300 is provided with a first contact 600, a second contact 620 and a second insulating portion 610 for isolating the first contact 600 and the second contact 620, wherein the first contact 600, the second contact 620 and the second insulating portion 610 are substantially equal in height and have a flush plane. The contours of the first contact 600, the second contact 620 and the second insulating portion 610 are substantially circular in the plan view of fig. 8, and the contours of the first contact 600, the second contact 620 and the second insulating portion 610 form a concentric circular structure having a center C2 in the plan view of fig. 8. The second contact 620 has a center C2 and a radius R3, and the second insulating portion 610 has a radius R4 from the center C2. In one embodiment, the center C2 overlaps the geometric center of the carrier 300. In another embodiment, the narrowest width of the second insulating portion 610 is greater than 150 μm. In an embodiment, the carrier 300 may be provided with a plurality of light emitting elements 20. More specifically, the carrier 300 is provided with a plurality of sets of first contacts 600 and second contacts 620 separated by the second insulating portion 610, such that each set of first contacts 600 and second contacts 620 is electrically connected to one light emitting element 20. As shown in fig. 7, the light emitting element 20 is fixedly connected to the carrier plate 300 through the conductive layers 103 and 104, the first electrode 60 of the light emitting element 20 is electrically connected to the first contact 600 through the conductive layer 103, the second electrode 62 is electrically connected to the second contact 620 through the conductive layer 104, and the first insulating portion 61 is substantially butted with the second insulating portion 610. The material of the conductive layers 103, 104 may be solder (holder) or anisotropic conductive paste (Anisotropic Conductive Paste; ACP). Referring to fig. 7, the edge shape of the conductive layers 103, 104 is arc-shaped. Wherein the center C1 of the second electrode 62 is substantially butted to the center C2 of the second contact 620. In this embodiment, the first contact 600, the second contact 620, the second insulating portion 610, the second electrode 62, and the first insulating portion 61 all have a circular outline. Wherein, the radius R1 of the second electrode 62 is not greater than the radius R4 of the second insulating portion 610, so as to avoid the second electrode 62 being electrically connected to the first contact 600 and the second contact 620 at the same time. And the radius R3 of the second contact 620 is not greater than the radius R2 of the first insulating portion 61, avoiding that the first electrode 60 is electrically connected with the second contact 620 together with the second electrode 62. Both sides of the conductive layers 103 and 104 are connected to the light emitting element 20 and the carrier 300, respectively. On one side of the carrier 300, when the conductive layers 103, 104 are connected to the second insulating portion 610, the bonding force between the conductive layers 103, 104 and the first contact 600, the second contact 620 is preferably greater than the bonding force between the conductive layers 103, 104 and the second insulating portion 610. On one side of the light emitting element 20, when the conductive layers 103, 104 are in contact with the second insulating portion 610, the bonding force between the conductive layers 103, 104 and the first electrode 60, the second electrode 62 is preferably larger than the bonding force between the conductive layers 103, 104 and the first insulating portion 61. The first contact 600, the second contact 620 are substantially flush with the surface of the second insulating portion 610 to mate with the substantially flat surface of the electrode portion 6 of the light emitting element 20. In one embodiment, the electrode portion 6 of the light emitting element 20 has a non-planar surface including protrusions and/or recesses. For example, the thickness of the second electrode 62 and the first insulating portion 61 is greater than the thickness of the first electrode 60. In contrast, the surfaces of the second contact 620 and the second insulating portion 610 of the carrier 300 are recessed more than the surface of the first contact 600 to match the protruding shape of the electrode portion 6; the conductive layer 104 is also filled in the concave portion of the carrier 300, so that the second electrode 62 can be electrically connected to the second contact 620 through the conductive layer 104, and the conductive layer 103 can be electrically connected to the first electrode 60 and the first contact 600.
Fig. 9 is a cross-sectional view of a light-emitting element according to an embodiment of the present application. The light emitting element 30 includes a carrier 204, a first semiconductor layer 201 having a first conductivity, a light emitting layer 202, a second semiconductor layer 203 having a second conductivity, a first electrode 80, a second electrode 82, and a groove portion 81 between the first electrode 80 and the second electrode 82. The first and second conductivity may be N-type and P-type, or P-type and N-type, respectively. The first semiconductor layer 201 includes a convex portion 201U, and the light emitting layer 202 is formed on the convex portion 201U and emits a non-coherent light. Referring to fig. 9, the convex portion 201U is located substantially at the position of the central portion of the first semiconductor layer 201, and is also located substantially at the position of the central portion of the light emitting element 30. In one embodiment, the uppermost surface of the first semiconductor layer 201 is a substantially uniform plane, and the light emitting layer 202 is formed on the substantially uniform plane and is located at a position of a central portion of the first semiconductor layer 201, and a center point (not shown) of the light emitting layer 202 is substantially aligned with a center point (not shown) of the first semiconductor layer 201. The first semiconductor layer 201 is electrically connected to the first electrode 80, and the second semiconductor layer 203 is electrically connected to the second electrode 82. Fig. 10 is a top view of the light emitting element 30 of fig. 9. Referring to fig. 10, the second electrode 82 has a circular profile, and the groove portion 81 surrounding the second electrode 82 has substantially the same circular profile as the second electrode 82. The second electrode 82 forms a concentric circle structure with the groove portion 81 surrounding the second electrode 82. The concentric circle structure has a center C3 in the plan view of fig. 10. The second electrode 82 has a radius R5 and the recess 81 has a radius R6 from the center C3. The outline of the light emitting layer 202 and the outline of the second electrode 82 are substantially the same circular shape, so that the light emitting element 30 has a circular light emitting area. The outer contour of the first electrode 80 is not limited to the aspect in fig. 10, and the outer contour of the first electrode 80 may be various shapes formed by a circle or other closed curve. The groove portions 81 have a substantially equal width in the plan view of fig. 10. The recess 81 contains air. In one embodiment, the narrowest width of the recess 81 is greater than 150 μm. In one embodiment, the recess 81 further includes an insulating material for electrically isolating the first electrode 80 from the light emitting layer 202, the second semiconductor layer 203 and the second electrode 82. And the insulating material may be such that the entire groove portion 81 is filled, or only a partial region of the groove portion 81 is covered with the insulating material, for example, a side wall of the first electrode 80 near the light emitting layer 202, a side wall of the light emitting layer 202 near the first electrode 80, a side wall of the second semiconductor layer 203 near the first electrode 80, and/or a side wall of the second electrode 82 near the first electrode 80.
In one embodiment, the carrier 204 is a substrate for epitaxial growth (epi) and the substrate is made of sapphire (sapphire), gallium nitride, silicon nitride, etc., and is suitable for forming (e.g., epitaxial growth technology) thereon a semiconductor material that can form a light emitting layer. In another embodiment, the carrier 204 is not a material layer for directly forming a light emitting layer or a growth substrate, but is another supporting member for replacing or supporting the growth substrate (the supporting member is a material, a structure, or a structure with a shape different from that of the growth substrate, for example)
Referring to fig. 10, the light emitting layer 202 has a circular outline with the outline of the second electrode 82 to provide a circular light emitting area, and the light emitting layer 202 has substantially the same optical characteristics including light emission intensity, dominant wavelength of emitted light, and/or peak wavelength of emitted light in all directions. And the circular profile also has the advantage of facilitating manufacturing, for example, in bonding the light emitting element 30 to the carrier plate via the conductive layer, the circular second electrode 82 still properly interfaces to the conductive area on the carrier plate even if the light emitting element 30 is rotated 45 degrees from its intended position, and the first electrode 80 does not interface to the interfacing conductive area of the second electrode 82. In contrast, when the electrodes do not have a circular profile, such as the electrodes 40, 42 of fig. 1, if the light emitting element 10 rotates (e.g., 45 degrees from the original intended position) during the bonding process, the electrodes 40 (and/or 42) have the opportunity to simultaneously interface to the two contacts 400 and 420 to form a short circuit, causing the light emitting element 10 to burn out.
Fig. 11 is a cross-sectional view of a light emitting device according to an embodiment of the present application. Fig. 12 is a top view of the carrier 301 in fig. 11. The light emitting device 3000 includes a light emitting element 30 fixedly connected to a carrier 301 through conductive layers 105, 106. For details of the light emitting element 30, reference is made to the relevant paragraphs in the previous embodiments. The light emitting device 3000 is not filled with a solid material in the recess 81, so that the space between the first semiconductor layer 201 and the carrier 301 is substantially filled with air. The carrier 301 is provided with a first contact 800, a second contact 820, and a third insulating portion 810 isolating the first contact 800 and the second contact 820. The second electrode 82 is electrically connected to the second contact 820 through the conductive layer 106. The first electrode 80 is electrically connected to the first contact 800 through the conductive layer 105. The conductive layer 105 and the conductive layer 106 are not in contact with each other, and edges of the conductive layer 105 and the conductive layer 106 are arc-shaped in side view.
Referring to fig. 12, the first contact 800, the second contact 820, and the third insulating portion 810 surrounding the second contact 820 form a concentric circle structure. The concentric circle structure has a center C4 in the plan view of fig. 12. The second contact 820 has a radius R7 from a center C4 and the third insulating portion 810 has a radius R8 from a center C4. The first contact 800, the second contact 820 and the third insulating portion 810 are substantially equal in height and have a flush plane. In one embodiment, the narrowest width of the third insulating portion 810 is greater than 150 μm. Therefore, when the light emitting device 30 is bonded to the carrier 301, if a deviation occurs in alignment between the light emitting device 30 and the carrier 301, for example, an error occurs between the position where the light emitting device 30 is placed and the predetermined distance d, and when the distance d is smaller than the narrowest width of the third insulating portion 810, the light emitting device 3000 can still operate normally without the first electrode 80 and the second contact 820 or the second electrode 82 and the first contact 800 contacting each other. In an embodiment, the carrier 301 may be provided with a plurality of light emitting elements 30. More specifically, the carrier 301 is provided with a plurality of sets of first contacts and second contacts separated by insulating portions, so that each set of first contacts 800 and second contacts 820 is electrically connected to one light emitting element 30. As shown in fig. 11, the light emitting element 30 is fixedly connected to the carrier 301 through the conductive layers 105 and 106. The first contact 800, the second contact 820, the third insulating portion 810, and the second electrode 82 all have similar contours, such as a circle. In other embodiments, the recess 81 and the second electrode 82 may have a quadrilateral, triangular, polygonal or a closed curve profile. Referring to fig. 10, 11, 12, the radius of the second electrode 82 is not greater than the maximum radius of the third insulating portion 810, avoiding the second electrode 82 from being electrically connected to the first contact 800. And the radius of the second contact 820 is not greater than the maximum radius of the groove portion 81, avoiding the first electrode 80 from being electrically connected to the second contact 820. Both sides of the conductive layers 105 and 106 are connected to the light emitting element 30 and the carrier 301, respectively. On the side of the carrier 301, the bonding force between the conductive layer 105 and the first contact 800, and the bonding force between the conductive layer 106 and the second contact 820 are larger than the bonding force between the conductive layer 105 or the conductive layer 106 and the third insulating portion 810. In one embodiment, the third insulating portion 810 is in contact with the conductive layers 105, 106, but the bonding force between the third insulating portion 810 and the conductive layers 105, 106 is less than the bonding force between the conductive layer 105 and the first electrode 80, and also less than the bonding force between the conductive layer 106 and the second electrode 82. The first contact 800, the second contact 820 are substantially flush with the surface of the third insulating portion 810 to mate with the substantially equal-height electrodes 80, 82 of the light emitting element 30. In one embodiment, the first contact 800, the second contact 820 and the third insulating portion 810 are protruded or recessed in accordance with the surface pattern of the electrodes 80 and 82, so that the contacts and the electrodes can be tightly bonded.
Fig. 13 is a bottom view of a light emitting device according to an embodiment of the application. The light emitting element 30' is substantially similar to the structure of the light emitting element 30, and the relevant description will be given with reference to the relevant paragraphs in the foregoing embodiments. The light emitting element 30 'has a circular outline, and as seen in fig. 13, the first electrode 80, the second electrode 82 and the recess 81 of the light emitting element 30' are substantially concentric with each other. Since the outline of the light emitting element 30 'and the outline of the light emitting layer (not shown) are both circular, the optical characteristics of the light emitting element 30' in each direction are substantially the same. And during the process of bonding the light emitting element 30' to the carrier plate (e.g., carrier plate 301 in fig. 12), the first electrode 80 or the second electrode 82 of the light emitting element 30' is not shorted by contacting two different contacts (e.g., first contact 800 and second contact 820 in fig. 12) on the carrier plate (e.g., carrier plate 301 in fig. 12) at the same time even if the light emitting element 30' is rotated.
Fig. 14 is a cross-sectional view of a light emitting device according to an embodiment of the present application. The light-emitting device 4000 comprises a light-emitting element 30 fixedly connected to a carrier 301 through a conductive layer 107. The light-emitting device 4000 is similar to the light-emitting device 3000, and reference is made to the relevant paragraphs in the previous embodiments for relevant details. It should be noted that the conductive layer 107 is a continuous layer, and connects the first electrode 80 and the carrier 301, and the second electrode 82 and the carrier 301. The conductive layer 107 includes a first region 107A, a second region 107B, and a third region 107C, wherein the first region 107A electrically connects the first electrode 80 and the first contact 800 on the carrier 301, the second region 107B electrically connects the second electrode 82 and the second contact 820 of the carrier 301, and the first region 107A and the second region 107B are isolated from each other by the third region 107C. Furthermore, the first region 107A and the second region 107B contain conductive particles with sufficient concentration and quantity, so as to achieve the effect of electrically connecting the light emitting device 30 and the conductive region on the carrier 301 (in a direction perpendicular to the surface of the carrier 301 contacting the conductive layer 107). The third region 107C has no conductive particles or contains only a small amount of conductive particles, which is insufficient to electrically connect the first region 107A and the second region 107B (in a direction parallel to the surface of the carrier 301 contacting the conductive layer 107) and insufficient to electrically connect the light emitting device 30 and the conductive region on the carrier 301 (in a direction perpendicular to the surface of the carrier 301 contacting the conductive layer 107). The difference in the number/concentration of the conductive particles in each region of the conductive layer 107 may be caused in the manufacturing process of manufacturing the light emitting device 4000. Specifically, when the conductive material of the conductive layer 107 is coated on the carrier 301, the conductive particles in the conductive material are initially substantially uniformly distributed, but during the process of placing and connecting the light emitting element 30 to the carrier 301, the conductive particles in the third region 107C move toward the regions 107A and 107B during the process of pressing or heating to make the conductive material be the conductive layer 107. Alternatively, a preformed difference, such as the formation of the conductive layer 107, may be performed such that the number/concentration of conductive particles in the third region 107C is lower than that in the regions 107A, 107B to achieve the vertical conductive effect in the specific region and electrically isolate portions of the region (in a direction parallel to the surface of the carrier 301 that is in contact with the conductive layer 107). In one embodiment, the conductive layer 107 is not uniform in height, and the third region 107C between the first region 107A and the second region 107B is low in height. The conductive layer 107 is similar to the conductive layers 105, 106, and the edge shape of the conductive layer 107 is also arcuate as seen in fig. 14.
The above embodiments are only for illustrating the technical spirit and features of the present application, and it is intended that those skilled in the art can understand the content of the present application and can practice the same, but the claims of the present application, i.e. equivalent changes or modifications, which are substantially in accordance with the spirit of the present application, shall be covered in the protection scope of the present application.
Claims (10)
1. A light-emitting device, comprising:
a light emitting element having a first electrode and a second electrode surrounded by the first electrode;
a carrier plate;
a first contact disposed on the carrier plate and facing the first electrode;
a first conductive layer electrically connecting the first electrode and the first contact; and
a second contact disposed on the carrier plate, facing the second electrode and surrounded by the first contact;
a second conductive layer electrically connected to the second electrode and the second contact,
wherein the first conductive layer is not flush with the outermost side of the first electrode,
wherein the second conductive layer is not flush with the outermost side of the second electrode,
wherein the first contact is similar to the contour of the first electrode and the second contact is similar to the contour of the second electrode.
2. The light emitting device of claim 1, wherein the first electrode and the second electrode have similar profiles.
3. The light emitting device of claim 1, wherein the second electrode is circular.
4. The light emitting device of claim 1, wherein the first electrode is circular.
5. The light-emitting device of claim 1, wherein the first electrode and the second electrode have a substantially concentric outline.
6. The light-emitting device of claim 1, wherein the first electrode or the second electrode is not quadrilateral in outline.
7. The light emitting device of claim 1, wherein the first conductive layer and the second conductive layer comprise ACF (Anisotropic Conductive film), SAP (Self Assembly Anisotropic Conductive Paste) or epoxy solder pate.
8. The light-emitting device according to claim 1, wherein the light-emitting element has a semiconductor stack, and in an upper view, the semiconductor stack is similar to or different from a contour of the second electrode.
9. The light emitting device of claim 8, wherein the semiconductor stack is circular in outline.
10. The light emitting device of claim 1, wherein the first electrode and the second electrode have different thicknesses.
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| TW106145576 | 2017-12-25 | ||
| TW106145576 | 2017-12-25 | ||
| CN201811590280.0A CN109980077B (en) | 2017-12-25 | 2018-12-25 | Light-emitting element and light-emitting device thereof |
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| KR101332794B1 (en) * | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | Light emitting device, light emitting system comprising the same, and fabricating method of the light emitting device and the light emitting system |
| CN102237473B (en) * | 2010-05-07 | 2015-03-11 | 展晶科技(深圳)有限公司 | Light emitting diode and manufacturing method thereof |
| KR20120082190A (en) * | 2011-01-13 | 2012-07-23 | 삼성엘이디 주식회사 | Light emitting device package |
| KR20160027875A (en) * | 2014-08-28 | 2016-03-10 | 서울바이오시스 주식회사 | Light emitting device |
| CN105428494A (en) * | 2014-09-02 | 2016-03-23 | 展晶科技(深圳)有限公司 | Light emitting diode package structure |
| CN204497261U (en) * | 2014-11-07 | 2015-07-22 | 惠州雷通光电器件有限公司 | LED encapsulation structure |
| CN204315621U (en) * | 2014-12-30 | 2015-05-06 | 广州市鸿利光电股份有限公司 | A kind of LED flip chip |
| US9705045B2 (en) * | 2015-02-17 | 2017-07-11 | Genesis Photonics Inc. | Light emitting diode having distributed bragg reflectors (DBR) and manufacturing method thereof |
| CN106201109B (en) * | 2016-07-29 | 2019-02-22 | 厦门天马微电子有限公司 | Touch-control display panel and display device |
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|---|---|
| TW201929192A (en) | 2019-07-16 |
| TWI834629B (en) | 2024-03-11 |
| CN109980077B (en) | 2023-06-20 |
| CN109980077A (en) | 2019-07-05 |
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