CN116864573A - Method for improving contact resistance of PCB - Google Patents
Method for improving contact resistance of PCB Download PDFInfo
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- CN116864573A CN116864573A CN202310923355.7A CN202310923355A CN116864573A CN 116864573 A CN116864573 A CN 116864573A CN 202310923355 A CN202310923355 A CN 202310923355A CN 116864573 A CN116864573 A CN 116864573A
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- circuit board
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- aluminum
- contact resistance
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000002002 slurry Substances 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- -1 silver-aluminum Chemical compound 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- 238000005245 sintering Methods 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 17
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000005303 weighing Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000956 alloy Substances 0.000 abstract description 6
- 229910045601 alloy Inorganic materials 0.000 abstract description 6
- 238000002161 passivation Methods 0.000 abstract description 6
- 230000009467 reduction Effects 0.000 description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/12—Stencil printing; Silk-screen printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/26—Printing on other surfaces than ordinary paper
- B41M1/30—Printing on other surfaces than ordinary paper on organic plastics, horn or similar materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for improving contact resistance of a PCB. The film structure of the passivation layer is optimized, so that the manufactured battery piece is more uniform, meanwhile, the conductive layer slurry is covered on the resistance-reducing layer, the conductive layer slurry can be conventional low-temperature conductive silver slurry or other metal conductive slurry or alloy thereof, and the width of the conductive layer slurry is larger than that of the resistance-reducing layer, so that the conductive layer and the resistance-reducing layer are ensured to be completely wrapped and contact with TCO; the contact resistance can be obviously reduced by the mode of the first heat treatment of the resistance reducing layer and the second heat treatment of the silicon wafer, and meanwhile, the resistivity of the auxiliary grid line can also be obviously reduced, so that the conduction resistance between the photo-generated current and the main grid from the battery base is greatly reduced, the contact resistance of the whole battery piece is reduced, the heating value of the PCB circuit board is reduced in the use process, and the safety of the whole PCB circuit board is improved.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a method for improving contact resistance of a PCB (printed circuit board).
Background
The PCB circuit board is an important electronic component, is a support body of the electronic component, and is also a carrier for electric connection of the electronic component. Almost every electronic device, as small as an electronic watch, a calculator, as large as a computer, a communication electronic device, a military weapon system, etc., has electronic components such as an integrated circuit, etc., and a circuit board is used for electrical interconnection therebetween. The battery plate of the PCB circuit board conducts electricity.
But the resistance of the battery piece is higher, so that the heating condition of the circuit board in the use process is serious, and a certain potential safety hazard is caused.
Disclosure of Invention
The invention aims at: in order to solve the above-mentioned problems, a method for improving contact resistance of a PCB is provided.
The technical scheme adopted by the invention is as follows: the method for improving the contact resistance of the PCB circuit board based on the photovoltaic screen printing comprises the following steps of:
s1, weighing 20-40 parts by weight of gallium-doped aluminum silicon powder, 845-865 parts by weight of silver powder and 20 parts by weight of glass powder to mix;
s2, adding 95 parts of organic carrier into the mixture;
s3, carrying out centrifugal mixing, and carrying out three-spoke grinding until the fineness is less than 5 mu m to prepare Si-doped silver-aluminum slurry;
s4, printing the prepared two front silver aluminum pastes on an N-type TOPCO circuit board resistor silicon wafer by using a Baccmi screen printer respectively;
s5, sintering in a despatich sintering furnace with the peak temperature of 930 ℃;
and S6, obtaining the solar cell, and ending the whole preparation process.
In a preferred embodiment, the gallium-doped aluminum silicon powder is Ga x Al 2 Si 1-x Where x= 0,0.1,0.2,0.2,0.3,0.4,0.5,0.6,0.7,0.8,1.0.
In a preferred embodiment, in the step S4, the silicon wafer size is 182mmX182mm.
In a preferred embodiment, in the step S4, the front electrode wet weight is controlled to 65±1mg.
In a preferred embodiment, in the step S5, the front silver-aluminum paste is printed on the SiN anti-reflection film, and the glass frit is etched through the SiN anti-reflection film during sintering to achieve good ohmic contact between Ag-Al-Si.
In a preferred embodiment, in the step S5, the silver-aluminum paste forms "silver-aluminum spikes" in the metalized area, and a plurality of shallow spikes become bridges for current transmission between the silver gate line and the silicon emitter.
In a preferred embodiment, in the step S4, the surface of the resistance-reducing layer is coated with the conductive layer paste, and the conductive layer paste completely covers the resistance-reducing layer, does not expose the resistance-reducing layer, and contacts the TCO layer on the surface of the silicon wafer.
In summary, due to the adoption of the technical scheme, the beneficial effects of the invention are as follows:
according to the invention, the corrosion speed of aluminum and the component adjustment of aluminum (including leveling and downward probing, optimization of the film structure of a passivation layer, thin SiOx thickness, siNX or aluminum oxide thickness and uniformity are optimized through glass, so that the manufactured battery piece is more uniform, meanwhile, the conductive layer slurry is covered on the basis of the resistance reduction layer, the conductive layer slurry can be conventional low-temperature conductive silver slurry or other metal conductive slurry or alloy thereof, the width of the conductive layer slurry is larger than that of the resistance reduction layer, so that the conductive layer and the resistance reduction layer are fully wrapped and are in contact with TCO, the contact resistance can be remarkably reduced through the mode of first heat treatment of the resistance reduction layer and second heat treatment of a silicon wafer, meanwhile, the resistivity of an auxiliary grid line can be remarkably reduced, so that the conductive resistance between a battery base and a main grid is greatly reduced, the contact resistance of the whole battery piece is reduced, the heat productivity of a PCB circuit board is reduced in the use process, and the safety of the PCB circuit board is improved.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described in the following in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Embodiment one:
the method for improving the contact resistance of the PCB circuit board based on the photovoltaic screen printing comprises the following steps of:
s1, weighing 20 parts by weight of gallium-doped aluminum silicon powder, 845 parts by weight of silver powder and 20 parts by weight of glass powder, and mixing; when the Ga component content is increased, R s Will get smaller and FF will increase. Si has the function of blocking the formation of silver aluminum spikes, the content of Si components is reduced along with the increase of Ga, and the blocking function of Si is weakened, so that the silver aluminum spikes with larger and larger sizes are formed, the P-N junction is damaged, and Voc is reduced. When the ratio of Ga to Si is 2:3, and when FF is V oc When the value of (1) reaches the maximum, I sc The effect of the variation of the ratio of Ga to Si is negligible, so that the battery conversion efficiency is highest.
S2, adding 95 parts of organic carrier into the mixture;
s3, carrying out centrifugal mixing, and carrying out three-spoke grinding until the fineness is less than 5 mu m to prepare Si-doped silver-aluminum slurry;
s4, printing the prepared two front silver aluminum pastes on an N-type TOPCO circuit board resistor silicon wafer by using a Baccmi screen printer respectively;
s5, sintering in a despatich sintering furnace with the peak temperature of 930 ℃;
and S6, obtaining the solar cell, and ending the whole preparation process.
The gallium-doped aluminum silicon powder is Ga x Al 2 Si 1-x Where x= 0,0.1,0.2,0.2,0.3,0.4,0.5,0.6,0.7,0.8,1.0.
In the step S4, the silicon wafer size is 182mmX182mm.
In the step S4, the wet weight of the front electrode is controlled to be 65+/-1 mg.
In the step S5, the front silver-aluminum paste is printed on the SiN antireflection film, and glass powder is etched to penetrate through the SiN antireflection film in the sintering process, so that good ohmic contact between Ag and Al and Si is realized.
In the step S5, the silver-aluminum paste forms "silver-aluminum spikes" in the metallized area, and a plurality of spikes with shallow depths become bridges for current transmission between the silver gate line and the silicon emitter.
According to the invention, the corrosion speed of aluminum and the component adjustment of aluminum (including leveling and downward probing, optimization of the film structure of a passivation layer, thin SiOx thickness, siNX or aluminum oxide thickness and uniformity are optimized through glass, so that the manufactured battery piece is more uniform, meanwhile, the conductive layer slurry is covered on the basis of the resistance reduction layer, the conductive layer slurry can be conventional low-temperature conductive silver slurry or other metal conductive slurry or alloy thereof, the width of the conductive layer slurry is larger than that of the resistance reduction layer, so that the conductive layer and the resistance reduction layer are fully wrapped and are in contact with TCO, the contact resistance can be remarkably reduced through the mode of first heat treatment of the resistance reduction layer and second heat treatment of a silicon wafer, meanwhile, the resistivity of an auxiliary grid line can be remarkably reduced, so that the conductive resistance between a battery base and a main grid is greatly reduced, the contact resistance of the whole battery piece is reduced, the heat productivity of a PCB circuit board is reduced in the use process, and the safety of the PCB circuit board is improved.
Embodiment two:
the method for improving the contact resistance of the PCB circuit board based on the photovoltaic screen printing comprises the following steps of:
s1, weighing 40 parts by weight of gallium-doped aluminum silicon powder, 865 parts by weight of silver powder and 20 parts by weight of glass powder, and mixing;
s2, adding 95 parts of organic carrier into the mixture;
s3, carrying out centrifugal mixing, and carrying out three-spoke grinding until the fineness is less than 5 mu m to prepare Si-doped silver-aluminum slurry;
s4, printing the prepared two front silver aluminum pastes on an N-type TOPCO circuit board resistor silicon wafer by using a Baccmi screen printer respectively;
s5, sintering in a despatich sintering furnace with the peak temperature of 930 ℃;
and S6, obtaining the solar cell, and ending the whole preparation process.
The gallium-doped aluminum silicon powder is Ga x Al 2 Si 1-x Where x= 0,0.1,0.2,0.2,0.3,0.4,0.5,0.6,0.7,0.8,1.0.
In the step S4, the silicon wafer size is 182mmX182mm.
In the step S4, the wet weight of the front electrode is controlled to be 65+/-1 mg.
In the step S5, the front silver-aluminum paste is printed on the SiN antireflection film, and glass powder is etched to penetrate through the SiN antireflection film in the sintering process, so that good ohmic contact between Ag and Al and Si is realized.
In the step S5, the silver-aluminum paste forms "silver-aluminum spikes" in the metallized area, and a plurality of spikes with shallow depths become bridges for current transmission between the silver gate line and the silicon emitter.
According to the invention, the corrosion speed of aluminum and the component adjustment of aluminum (including leveling and downward probing, optimization of the film structure of a passivation layer, thin SiOx thickness, siNX or aluminum oxide thickness and uniformity are optimized through glass, so that the manufactured battery piece is more uniform, meanwhile, the conductive layer slurry is covered on the basis of the resistance reduction layer, the conductive layer slurry can be conventional low-temperature conductive silver slurry or other metal conductive slurry or alloy thereof, the width of the conductive layer slurry is larger than that of the resistance reduction layer, so that the conductive layer and the resistance reduction layer are fully wrapped and are in contact with TCO, the contact resistance can be remarkably reduced through the mode of first heat treatment of the resistance reduction layer and second heat treatment of a silicon wafer, meanwhile, the resistivity of an auxiliary grid line can be remarkably reduced, so that the conductive resistance between a battery base and a main grid is greatly reduced, the contact resistance of the whole battery piece is reduced, the heat productivity of a PCB circuit board is reduced in the use process, and the safety of the PCB circuit board is improved.
Embodiment III:
the method for improving the contact resistance of the PCB circuit board based on the photovoltaic screen printing comprises the following steps of:
s1, weighing 30 parts by weight of gallium-doped aluminum silicon powder, 845 parts by weight of silver powder and 20 parts by weight of glass powder, and mixing;
s2, adding 95 parts of organic carrier into the mixture;
s3, carrying out centrifugal mixing, and carrying out three-spoke grinding until the fineness is less than 5 mu m to prepare Si-doped silver-aluminum slurry;
s4, printing the prepared two front silver aluminum pastes on an N-type TOPCO circuit board resistor silicon wafer by using a Baccmi screen printer respectively;
s5, sintering in a despatich sintering furnace with the peak temperature of 930 ℃;
and S6, obtaining the solar cell, and ending the whole preparation process.
The gallium-doped aluminum silicon powder is Ga x Al 2 Si 1-x Where x= 0,0.1,0.2,0.2,0.3,0.4,0.5,0.6,0.7,0.8,1.0.
In the step S4, the silicon wafer size is 182mmX182mm.
In the step S4, the wet weight of the front electrode is controlled to be 65+/-1 mg.
In the step S5, the front silver-aluminum paste is printed on the SiN antireflection film, and glass powder is etched to penetrate through the SiN antireflection film in the sintering process, so that good ohmic contact between Ag and Al and Si is realized.
In the step S5, the silver-aluminum paste forms "silver-aluminum spikes" in the metallized area, and a plurality of spikes with shallow depths become bridges for current transmission between the silver gate line and the silicon emitter.
According to the invention, the corrosion speed of aluminum and the component adjustment of aluminum (including leveling and downward probing, optimization of the film structure of a passivation layer, thin SiOx thickness, siNX or aluminum oxide thickness and uniformity are optimized through glass, so that the manufactured battery piece is more uniform, meanwhile, the conductive layer slurry is covered on the basis of the resistance reduction layer, the conductive layer slurry can be conventional low-temperature conductive silver slurry or other metal conductive slurry or alloy thereof, the width of the conductive layer slurry is larger than that of the resistance reduction layer, so that the conductive layer and the resistance reduction layer are fully wrapped and are in contact with TCO, the contact resistance can be remarkably reduced through the mode of first heat treatment of the resistance reduction layer and second heat treatment of a silicon wafer, meanwhile, the resistivity of an auxiliary grid line can be remarkably reduced, so that the conductive resistance between a battery base and a main grid is greatly reduced, the contact resistance of the whole battery piece is reduced, the heat productivity of a PCB circuit board is reduced in the use process, and the safety of the PCB circuit board is improved.
Embodiment four:
the method for improving the contact resistance of the PCB circuit board based on the photovoltaic screen printing comprises the following steps of:
s1, weighing 40 parts by weight of gallium-doped aluminum silicon powder, 855 parts by weight of silver powder and 20 parts by weight of glass powder, and mixing;
s2, adding 95 parts of organic carrier into the mixture;
s3, carrying out centrifugal mixing, and carrying out three-spoke grinding until the fineness is less than 5 mu m to prepare Si-doped silver-aluminum slurry;
s4, printing the prepared two front silver aluminum pastes on an N-type TOPCO circuit board resistor silicon wafer by using a Baccmi screen printer respectively;
s5, sintering in a despatich sintering furnace with the peak temperature of 930 ℃;
and S6, obtaining the solar cell, and ending the whole preparation process.
The gallium-doped aluminum silicon powder is Ga x Al 2 Si 1-x Where x= 0,0.1,0.2,0.2,0.3,0.4,0.5,0.6,0.7,0.8,1.0.
In the step S4, the silicon wafer size is 182mmX182mm.
In the step S4, the wet weight of the front electrode is controlled to be 65+/-1 mg.
In the step S5, the front silver-aluminum paste is printed on the SiN antireflection film, and glass powder is etched to penetrate through the SiN antireflection film in the sintering process, so that good ohmic contact between Ag and Al and Si is realized.
In the step S5, the silver-aluminum paste forms "silver-aluminum spikes" in the metallized area, and a plurality of spikes with shallow depths become bridges for current transmission between the silver gate line and the silicon emitter.
According to the invention, the corrosion speed of aluminum and the component adjustment of aluminum (including leveling and downward probing, optimization of the film structure of a passivation layer, thin SiOx thickness, siNX or aluminum oxide thickness and uniformity are optimized through glass, so that the manufactured battery piece is more uniform, meanwhile, the conductive layer slurry is covered on the basis of the resistance reduction layer, the conductive layer slurry can be conventional low-temperature conductive silver slurry or other metal conductive slurry or alloy thereof, the width of the conductive layer slurry is larger than that of the resistance reduction layer, so that the conductive layer and the resistance reduction layer are fully wrapped and are in contact with TCO, the contact resistance can be remarkably reduced through the mode of first heat treatment of the resistance reduction layer and second heat treatment of a silicon wafer, meanwhile, the resistivity of an auxiliary grid line can be remarkably reduced, so that the conductive resistance between a battery base and a main grid is greatly reduced, the contact resistance of the whole battery piece is reduced, the heat productivity of a PCB circuit board is reduced in the use process, and the safety of the PCB circuit board is improved.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. A method for improving contact resistance of a PCB (printed Circuit Board) is characterized by comprising the following steps: the method for reducing the contact resistance of the battery piece based on the paste improved by the photovoltaic screen printing comprises the following steps:
s1, weighing 20-40 parts by weight of gallium-doped aluminum silicon powder, 845-865 parts by weight of silver powder and 20 parts by weight of glass powder to mix;
s2, adding 95 parts of organic carrier into the mixture;
s3, carrying out centrifugal mixing, and carrying out three-spoke grinding until the fineness is less than 5 mu m to prepare Si-doped silver-aluminum slurry;
s4, printing the prepared two front silver aluminum pastes on an N-type TOPCON circuit board resistor silicon wafer by using a Baccmi screen printer respectively, manufacturing a nano metal layer on the surface of the circuit board resistor silicon wafer as a resistance reducing layer, performing first heat treatment, performing laser selective irradiation on the resistance reducing layer, performing scanning irradiation on the resistance reducing layer, performing second heat treatment on the silicon wafer with the resistance reducing layer covered with the conductive layer paste, and curing the conductive paste on the surface of the resistance reducing layer to form an electrode together with the resistance reducing layer;
s5, sintering in a despatich sintering furnace with the peak temperature of 930 ℃;
and S6, obtaining the solar cell, and ending the whole preparation process.
2. The method for improving contact resistance of a PCB circuit board of claim 1, wherein: in the step S1, the gallium-doped aluminum silicon powder is Ga x Al 2 Si 1-x Where x= 0,0.1,0.2,0.2,0.3,0.4,0.5,0.6,0.7,0.8,1.0.
3. The method for improving contact resistance of a PCB circuit board of claim 1, wherein: in the step S4, the silicon wafer size is 182mmX182mm.
4. The method for improving contact resistance of a PCB circuit board of claim 1, wherein: in the step S4, the wet weight of the front electrode is controlled to be 65+/-1 mg.
5. The method for improving contact resistance of a PCB circuit board of claim 1, wherein: in the step S5, the front silver-aluminum paste is printed on the SiN antireflection film, and glass powder is etched to penetrate through the SiN antireflection film in the sintering process, so that good ohmic contact between Ag and Al and Si is realized.
6. The method for improving contact resistance of a PCB circuit board of claim 1, wherein: in the step S5, the silver-aluminum paste forms "silver-aluminum spikes" in the metallized area, and a plurality of spikes with shallow depths become bridges for current transmission between the silver gate line and the silicon emitter.
7. The method for improving contact resistance of a PCB circuit board of claim 1, wherein: in the step S4, the surface of the resistance-reducing layer is coated with the conductive layer slurry, and the conductive layer slurry completely covers the resistance-reducing layer, does not expose the resistance-reducing layer, and contacts with the TCO layer on the surface of the silicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310923355.7A CN116864573A (en) | 2023-07-26 | 2023-07-26 | Method for improving contact resistance of PCB |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310923355.7A CN116864573A (en) | 2023-07-26 | 2023-07-26 | Method for improving contact resistance of PCB |
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| Publication Number | Publication Date |
|---|---|
| CN116864573A true CN116864573A (en) | 2023-10-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310923355.7A Pending CN116864573A (en) | 2023-07-26 | 2023-07-26 | Method for improving contact resistance of PCB |
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| Country | Link |
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| CN (1) | CN116864573A (en) |
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2023
- 2023-07-26 CN CN202310923355.7A patent/CN116864573A/en active Pending
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