CN116779405A - Substrate mounting table, substrate processing apparatus, and substrate processing method - Google Patents

Substrate mounting table, substrate processing apparatus, and substrate processing method Download PDF

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Publication number
CN116779405A
CN116779405A CN202310202363.2A CN202310202363A CN116779405A CN 116779405 A CN116779405 A CN 116779405A CN 202310202363 A CN202310202363 A CN 202310202363A CN 116779405 A CN116779405 A CN 116779405A
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CN
China
Prior art keywords
substrate
holder
pin
lift pin
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310202363.2A
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Chinese (zh)
Inventor
深泽润一
边见笃
大上胜行
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN116779405A publication Critical patent/CN116779405A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present disclosure provides a substrate mounting table, a substrate processing apparatus, and a substrate processing method for suppressing a substrate processing from becoming uneven at a position corresponding to a lift pin. A substrate mounting table having a mounting surface on which a substrate is mounted, the substrate mounting table comprising: a substrate; a lifting pin composed of a conductor, lifting relative to the carrying surface, having a step between an upper part and a lower part, the diameter of the upper part being larger than that of the lower part; a pin hole formed in the base material and having an opening in the mounting surface, into which the lifting pin protrudes; and a holder including a through hole through which the lift pin passes, the holder being provided to the base material and configured by a conductor, the holder including an outer holder and an inner holder, the through hole being formed on a central axis of the inner holder so as to be capable of moving the lift pin up and down, the diameter of the through hole being smaller than the diameter of an upper portion of the lift pin, the inner holder being slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder.

Description

Substrate mounting table, substrate processing apparatus, and substrate processing method
Technical Field
The present disclosure relates to a substrate mounting table, a substrate processing apparatus, and a substrate processing method.
Background
Patent document 1 discloses a substrate mounting table in which, when a substrate is subjected to plasma processing, processing unevenness at a position of a mounting table main body corresponding to a through hole of a lift pin is suppressed.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2007-273685
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides a substrate mounting table, a substrate processing apparatus, and a substrate processing method, which suppress a substrate processing from becoming uneven at a position corresponding to a lift pin.
Solution for solving the problem
According to an aspect of the present disclosure, there is provided a substrate mounting table having a mounting surface on which a substrate is mounted, the substrate mounting table including: a base material positioned below the mounting surface and made of a conductor; a lift pin made of a conductor, which is lifted and lowered relative to the mounting surface, the lift pin having a step between an upper portion and a lower portion, the diameter of the upper portion being larger than the diameter of the lower portion; a pin hole formed in the base material and opened to the mounting surface, the pin hole being configured to allow the lifting pin to protrude and retract; and a holder including a through hole through which the lift pin passes, the holder being provided on the base material and configured by a conductor, the holder including an outer holder and an inner holder having a common central axis, the through hole being formed on the central axis of the inner holder so as to be capable of moving the lift pin up and down, the diameter of the through hole being smaller than the diameter of the upper portion of the lift pin, the inner holder being slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder.
ADVANTAGEOUS EFFECTS OF INVENTION
The present disclosure provides a substrate mounting table, a substrate processing apparatus, and a substrate processing method that suppress a substrate processing from becoming uneven at a position corresponding to a lift pin.
Drawings
Fig. 1 is a cross-sectional view showing a substrate processing apparatus including a substrate stage according to the present embodiment.
Fig. 2 is an enlarged cross-sectional view of the substrate stage according to the present embodiment.
Fig. 3 is an enlarged cross-sectional view of the substrate stage according to the present embodiment.
Fig. 4 is a partial side view of the lift pins provided in the substrate stage according to the present embodiment.
Fig. 5 is an enlarged cross-sectional view of a holder provided in the substrate stage according to the present embodiment.
Fig. 6 is a flowchart illustrating a substrate processing method using the substrate processing apparatus including the substrate stage according to the present embodiment.
Detailed Description
Hereinafter, modes for carrying out the present disclosure will be described with reference to the drawings. In the present specification and the drawings, substantially the same structures are denoted by the same reference numerals, and overlapping description thereof is omitted.
The deviation of the degree of not impairing the effect of the embodiment is allowed in the directions of parallel, right angle, orthogonal, horizontal, vertical, up-down, left-right, and the like. The shape of the corner is not limited to right angles, but may be arcuate with rounded corners. The terms parallel, right angle, orthogonal, horizontal, and vertical may also include substantially parallel, substantially right angle, substantially orthogonal, substantially horizontal, and substantially vertical.
Fig. 1 is a cross-sectional view showing a substrate processing apparatus 1 including a substrate stage 20 according to the present embodiment. The substrate processing apparatus 1 is, for example, a plasma etching apparatus. The substrate processing apparatus 1 is, for example, a capacitive coupling type parallel plate plasma etching apparatus.
The substrate processing apparatus 1 is, for example, an apparatus for etching a glass substrate G for a flat panel display (FPD: flat Panel Display). Examples of the flat panel display include a liquid crystal display, a light emitting diode display, an electroluminescent display, a fluorescent display tube, and a plasma display.
The substrate processing apparatus 1 includes a processing container 10, a substrate stage 20, a power supply unit 30, a gas supply unit 40, and an exhaust unit 50.
[ treatment vessel 10]
The processing vessel 10 is a so-called processing chamber. The treatment container 10 is formed of, for example, aluminum or an aluminum alloy whose surface is subjected to aluminum anodizing (anodizing). The processing container 10 has a square tubular shape.
The processing vessel 10 includes a shower head 11 at an upper portion. The showerhead 11 faces the substrate stage 20 in parallel and functions as an upper electrode. The showerhead 11 supplies a gas to the process space 10S of the process container 10.
The shower head 11 is disposed above the substrate stage 20. The shower head 11 is supported on the upper portion of the process container 10. The nozzle 11 is grounded. The shower head 11 forms a pair of parallel flat electrodes together with the substrate stage 20.
The head 11 has an internal space 11a therein. The showerhead 11 has a plurality of discharge holes 11b for discharging the process gas on the surface facing the substrate stage 20.
A gas inlet 11c is provided in the upper surface of the showerhead 11. The process gas supply pipe 40p is connected to the gas inlet 11c. The process gas supply pipe 40p is connected to a gas supply unit 40.
The processing container 10 includes a partition member 12 on a bottom wall 10a for placing a substrate stage 20 thereon. The spacer member 12 is formed of an insulator. The spacer member 12 is provided so as to correspond to the outer shape of the substrate stage 20. The substrate stage 20 is placed on the spacer member 12. The substrate stage 20 is composed of a main body 21 and an insulating member 22.
The space member 12 and the bottom wall 10a, and the space member 12 and the body portion 21 and the insulating member 22 are hermetically sealed. Thus, an air atmosphere space 10A is formed between the main body 21 and the bottom wall 10A of the substrate stage 20. The space 10A is used for air insulation.
The processing container 10 includes a plurality of insulating members 13. The insulating member 13 is buried in the bottom wall 10a of the process container 10. The bolt 14 is inserted into a through hole provided vertically in the center of the insulating member 13. The main body 21 of the substrate stage 20 is fixed to the bottom wall 10a by bolts 14. By fixing the main body 21 to the bottom wall 10A using the plurality of bolts 14, even if the inside of the process container 10 is kept in vacuum, the substrate stage 20 can be prevented from being deflected by the pressure difference between the process space 10S in the vacuum atmosphere and the space 10A in the air atmosphere.
The processing container 10 includes an exhaust pipe 15 connected to the bottom wall 10a. The exhaust pipe 15 is connected to the exhaust unit 50. The exhaust unit 50 exhausts the processing space 10S of the processing container 10. The evacuation section 50 evacuates the inside of the processing space 10S of the processing container 10 to a predetermined reduced pressure atmosphere.
The processing container 10 includes a substrate inlet/outlet 16 and a gate valve 17 for opening/closing the substrate inlet/outlet 16 on a side wall. The substrate processing apparatus 1 conveys the glass substrate G between the adjacent load lock chambers (not shown) with the gate valve 17 opened.
[ substrate mounting table 20]
The substrate processing apparatus 1 includes a substrate stage 20 for placing a glass substrate G as a substrate to be processed on the bottom of a processing container 10. The substrate stage 20 mounts a glass substrate G on the mounting surface 20S. That is, the substrate stage 20 has a mounting surface 20S. The substrate stage 20 is disposed inside the process container 10.
The substrate stage 20 includes a main body 21, an insulating member 22, and a plurality of substrate lifting/lowering units 23. Fig. 2 and 3 are enlarged cross-sectional views of the substrate stage 20 according to the present embodiment. Specifically, fig. 2 and 3 are enlarged cross-sectional views of the substrate lifting/lowering portion 23 of the substrate stage 20. Fig. 2 shows a state in which the glass substrate G is placed on the substrate stage 20 and the lift pins 23a are retracted into the substrate stage 20. The state of fig. 2 is referred to as a backoff state. Fig. 3 shows a state in which the glass substrate G is lifted from the substrate stage 20 by the lift pins 23a. The state of fig. 3 is referred to as a support state.
(Main body 21)
The main body 21 functions as a lower electrode by supplying high-frequency power from the power supply unit 30.
The main body 21 includes a base 21a, a dielectric layer 21b, a plurality of protrusions 21c, and banks 21d. The bank 21d protrudes upward from the dielectric layer 21b and is formed in a frame shape on the peripheral edge of the upper surface of the main body 21. The main body 21 includes a pin hole 21h into which the lift pin 23a provided in the substrate lift section 23 protrudes. The pin holes 21h penetrate the base material 21a and the dielectric layer 21b. The pin hole 21h opens on the mounting surface 20S. The mounting surface 20S is also provided with a plurality of cooling gas holes (not shown) for supplying a cooling gas (back surface cooling gas) such as helium. A cooling gas such as helium is supplied between the mounting surface 20S and the lower surface (back surface) of the glass substrate G, and exchanges heat with the glass substrate G to adjust the temperature of the glass substrate G.
The base material 21a is made of a conductive member, that is, a conductor. The base material 21a is formed of, for example, metal. Specifically, the base material 21a is formed of, for example, aluminum, an aluminum alloy, a stainless steel alloy, or a combination of an aluminum alloy and a stainless steel alloy. The substrate 21a is positioned below the mounting surface 20S. The substrate lifting/lowering portion 23 is mounted on the base material 21 a.
The main body 21 includes a dielectric layer 21b on the upper portion of the base 21 a. The dielectric layer 21b is formed of a dielectric such as ceramic. The dielectric layer 21b has an electrode 21b1 for electrostatic attraction embedded therein. The electrode 21b1 is an electrostatic adsorbing electrode. A voltage is applied to the electrode 21b1 from an external power source not shown. By applying a voltage to the electrode 21b1, the glass substrate G is attracted by coulomb force. The electrode 21b1 is formed of tungsten or the like, for example.
The base material 21a includes a flow path, not shown, therein. The heat medium set to a predetermined temperature flows through the flow path of the base material 21a, and the base material 21a adjusts the temperature to a predetermined desired temperature.
The main body 21 includes a bank 21d and a plurality of projections 21c on an upper portion of the dielectric layer 21b. The protruding portion 21c and the bank 21d are formed of, for example, a dielectric material. The protruding portion 21c is formed in a protruding shape on the upper portion of the dielectric layer 21b, and the bank 21d is provided on the peripheral edge portion of the upper portion of the dielectric layer 21b. The upper surface of the bank 21d and the upper surface of the protrusion 21c are higher than or the same as the upper surface of the protrusion 21c. When the glass substrate G is placed on the substrate placement stage 20, the glass substrate G is in contact with the upper surface of the bank 21d or in contact with the upper surface of the bank 21d and the upper surface of the protrusion 21c. The body 21 may not have a plurality of projections 21c, and the area inside the bank 21d may be flat. In addition, roughening may be performed when the area inside the bank 21d is a flat surface.
(insulating member 22)
The substrate stage 20 includes an insulating member 22 provided so as to surround the periphery of the base 21 a. The upper surface of the insulating member 22 is slightly lower than the upper surface of the bank 21d of the main body 21, and a gap (for example, about 0.1 mm to 0.3 mm) is formed without being in contact with the glass substrate G. The insulating member 22 may be divided into a plurality of members such as an upper member and a lower member.
(substrate lifting/lowering portion 23)
The substrate lifting/lowering unit 23 supports the glass substrate G above the substrate mounting table 20 when the glass substrate G is mounted on and dismounted from the substrate mounting table 20, respectively. The glass substrate G supported above the substrate stage 20 is fed in and out by a conveyor.
The substrate lifting/lowering portion 23 is inserted into the processing container 10 from the outside of the bottom wall 10a. The substrate lifting portion 23 includes a lifting pin 23a, a holder 23b, a biasing member 23c, an O-ring 23d, a connecting portion 23e, and a lifting portion 23f.
(lifting pin 23 a)
The lift pins 23a support the glass substrate G. In addition, the lifting pins 23a lift the glass substrate G. The lift pin 23a protrudes into a pin hole 21h formed in the main body 21. The lift pin 23a is formed of a conductive member.
Fig. 4 is a partial side view of the lift pins 23a provided in the substrate stage 20 according to the present embodiment. The lift pin 23a has an upper portion 23a1, an inclined portion 23a2, and a lower portion 23a3. The lift pin 23a has a rotationally symmetrical shape with respect to the central axis AX.
The upper portion 23a1 of the lift pin 23a has a central axis AX and a cylindrical shape having a diameter D2. The diameter D2 of the upper portion 23a1 is smaller than the diameter D1 of the pin hole 21h. Thus, even if the lift pin 23a moves in the up-down direction, the lift pin 23a is not in contact with the inner surface of the pin hole 21h. Thus, particles and the like can be prevented from being generated by the contact of the lift pin 23a with the inner surface of the pin hole 21h.
When the lift pins 23a are lifted, the lift pins 23a support the glass substrate G with the upper surface 23aA of the upper portion 23a 1. In other words, the upper surface 23aA of the upper portion 23a1 serves as a support surface for supporting the glass substrate G. The lift pins 23a may contact the glass substrate G at an upper surface 23aA of the upper portion 23a 1.
The side surface 23aB of the lift pin 23a becomes a sealing surface in contact with the O-ring 23d. When the lift pin 23a is in the retracted state (see fig. 2), the side surface 23aB of the upper portion 23a1 contacts the O-ring 23d. The side surface 23aB of the lift pin 23a contacts the O-ring 23d, thereby ensuring air tightness between the lift pin 23a and the O-ring 23d. In other words, the side surface 23aB of the lift pin 23a contacts the O-ring 23d, so that the air tightness between the lift pin 23a and the holder 23b can be ensured.
For example, a cooling gas (back surface cooling gas) such as helium may be flowed between the lower surface (back surface) of the glass substrate G and the mounting surface 20S. By ensuring the airtight seal between the lift pin 23a and the holder 23b, leakage of cooling gas to the lower side of the pin hole 21h can be suppressed. By suppressing leakage of the cooling gas, the temperature stability can be improved.
The inclined portion 23a2 of the lift pin 23a connects the upper portion 23a1 and the lower portion 23a3 having different outer diameters. The inclined portion 23a2 connects the steps between the upper portion 23a1 and the lower portion 23a3. The inclined portion 23a2 has a symmetrical shape with respect to the central axis AX. The inclined portion 23a2 has a truncated cone shape with a large upper surface and a small lower surface.
The inclined portion 23a2 has a side surface 23aC. When the lift pin 23a is in the retracted state (see fig. 2), the side surface 23aC contacts the inclined surface 23nA (see fig. 5) of the inner holder 23n provided in the holder 23b. The side surface 23aC contacts the inclined surface 23nA, and the lift pin 23a and the holder 23b are thereby brought into conduction. The lifter pin 23a and the holder 23b are in conduction, and thus the substrate 21a and the lifter pin 23a are in conduction state and have the same potential. The substrate 21a and the lift pins 23a have the same potential, so that the potential distribution on the mounting surface 20S of the substrate mounting table 20 can be made uniform.
When the lift pin 23a is in the supported state (see fig. 3), the side surface 23aC is separated from the inclined surface 23nA of the inner holder 23n provided in the holder 23b. The side surface 23aC is separated from the inclined surface 23nA, and the lifter pin 23a and the holder 23b are electrically disconnected. The elevating pin 23a and the holder 23b are electrically disconnected, and the base material 21a and the elevating pin 23a are insulated from each other. By placing the base material 21a and the lift pins 23a in an insulating state, abnormal discharge can be prevented when, for example, the glass substrate G is separated from the substrate stage 20 while the charged glass substrate G is being subjected to charge removal by the charge-removing plasma.
The lower portion 23a3 of the lift pin 23a has a central axis AX and a cylindrical shape having a diameter D3. The diameter D3 of the lower portion 23a3 is smaller than the inner diameter of the O-ring 23D. Thus, when the lift pin 23a is in the supported state (see fig. 3), the side surface 23aD of the lower portion 23a3 is not in contact with the inner surface of the O-ring 23d. Therefore, generation of particles or the like due to contact with the O-ring 23d when the lift pin 23a moves can be suppressed.
(retainer 23 b)
The holder 23b holds the lifting pin 23a to be liftable. The holder 23b includes an outer holder 23m and an inner holder 23n.
Fig. 5 is an enlarged cross-sectional view of the holder 23b provided in the substrate stage 20 according to the present embodiment. The outer holder 23m and the inner holder 23n have a common central axis BX. The outer holder 23m and the inner holder 23n have rotationally symmetrical shapes with respect to the central axis BX.
The outer holder 23m is fitted into a recess 21ah provided in the lower surface of the base 21 a. The outer holder 23m is formed of a conductive member. The outer holder 23m is formed of, for example, aluminum or an aluminum alloy. The outer holder 23m is in communication with the base 21 a. The upper surface 23mA and the side surface 23mB of the outer holder 23m are in contact with the inner surface of the recess 21ah. The upper surface 23mA and the side surface 23mB of the outer holder 23m are in contact with the inner surface of the recess 21ah, whereby the outer holder 23m and the base material 21a are brought into a conductive state.
The outer holder 23m has an upper portion 23ma, a cylindrical portion 23mb, and a lower portion 23mc. The inside of the outer holder 23m becomes a cavity. The outer holder 23m internally holds the inner holder 23n and the urging member 23c.
The upper portion 23ma has a disk-like shape having an opening 23 mh. The diameter of the opening 23mh is equal to the diameter D1 of the pin hole 21h. The diameter of the opening 23mh may be larger than the diameter D1. The upper portion 23ma has a ring groove 23mg holding an O-ring 23d. An O-ring 23d is provided in the annular groove 23mg.
The cylindrical portion 23mb has a cylindrical shape. The inner surface 23mC of the cylindrical portion 23mb is in contact with the outer surface 23nB of the inner holder 23n. By the contact of the inner surface 23mC with the outer surface 23nB, conduction between the outer holder 23m and the inner holder 23n is achieved. The inner holder 23n moves relative to the outer holder 23m. Therefore, a metal film containing a fluorine-based resin is formed on the inner surface 23mC so that the inner surface 23mC and the outer surface 23nB easily slide. For example, nickel or platinum is used as the metal film.
The lower portion 23mc has a disk-like shape having an opening 23 mi. The diameter of the opening 23mi of the lower portion 23mc is equal to the outer diameter of the cylindrical portion 23nb of the inner holder 23n. The inner surface 23mD of the lower portion 23mc is in contact with the outer surface 23nC of the inner holder 23n. The inner surface 23mD contacts the outer surface 23nC, so that conduction between the outer holder 23m and the inner holder 23n is achieved. The inner holder 23n moves relative to the outer holder 23m. Therefore, a metal film containing a fluorine-based resin is formed on the inner surface 23mD so that the inner surface 23mD and the outer surface 23nC are easily slid. For example, nickel or platinum is used as the metal film.
The inner holder 23n is provided inside the outer holder 23m. The inner holder 23n is slidably supported by the outer holder 23m. The inner holder 23n is provided on the outer holder 23m so as to be movable in the up-down direction relative to the outer holder 23m, i.e., so as to be movable up-down. The inner holder 23n is formed of a conductive member. The inner holder 23n is formed of, for example, aluminum or an aluminum alloy.
The inner holder 23n has a through hole 23nh penetrating in the vertical direction. The through hole 23nh is formed on the central axis of the inner holder 23n, in other words, on the central axis BX. The inner diameter of the through hole 23nh is formed larger than the diameter D3 of the lower portion 23a3 of the lift pin 23a so that the lift pin 23a can move up and down. The inner diameter of the through hole 23nh is smaller than the diameter D2 of the upper portion 23a1 of the lift pin 23a. The inner holder 23n includes an upper portion 23na and a cylindrical portion 23nb.
The upper portion 23nA has an inclined surface 23nA at an upper end of the upper side of the through hole 23nh. When the lift pin 23a is in the retracted state (see fig. 2), the inclined surface 23nA contacts the side surface 23aC of the lift pin 23a. The inclined surface 23nA contacts the side surface 23aC, and the lift pin 23a and the holder 23b are thereby brought into conduction. The lifter pin 23a and the holder 23b are in conduction, and thus the substrate 21a and the lifter pin 23a are in conduction state and have the same potential. The substrate 21a and the lift pins 23a have the same potential, so that the potential distribution of the substrate stage 20 can be made uniform.
The outer diameter of the upper portion 23na is equal to the diameter of the inner surface 23mC of the cylindrical portion 23mb of the outer holder 23m. Thus, the outer surface 23nB, which is a side surface of the upper portion 23na, is in contact with the inner surface 23mC of the cylindrical portion 23 mb. The outer surface 23nB contacts the inner surface 23mC, and thereby conduction is established between the outer holder 23m and the inner holder 23n. The inner holder 23n moves relative to the outer holder 23m. Therefore, a metal film containing a fluorine-based resin is formed on the outer surface 23nB so that the inner surface 23mC and the outer surface 23nB are easily slid. For example, nickel or platinum is used as the metal film.
A biasing member 23c is provided between the upper portion 23na and the lower portion 23mc of the outer holder 23m. The inner holder 23n is biased upward by a biasing member 23c. In the retracted state (see fig. 2), when the lift pin 23a is lowered, the lift pin 23a contacts the inner holder 23n. The inner holder 23n is biased upward by the biasing member 23c, so that the lift pin 23a and the inner holder 23n can be brought into contact with each other while maintaining a predetermined pressing force. By bringing the lift pin 23a into contact with the inner holder 23n while maintaining a predetermined pressing force, conduction between the lift pin 23a and the inner holder 23n can be sufficiently ensured.
Further, the inner holder 23n is biased upward by the biasing member 23c, so that the inner holder 23n can move when the inner holder 23n is moved and brought into contact by the lift pin 23a.
The cylindrical portion 23nb has a cylindrical shape. The outer surface 23nC of the cylindrical portion 23nb is in contact with the inner surface 23mD of the outer holder 23m. The outer surface 23nC contacts the inner surface 23mD, so that conduction between the outer holder 23m and the inner holder 23n is achieved. The inner holder 23n moves relative to the outer holder 23m. Therefore, a metal film containing a fluorine-based resin is formed on the outer surface 23nC so that the outer surface 23nC and the inner surface 23mD are easily slid. For example, nickel or platinum is used as the metal film.
In fig. 5, a portion where the outer holder 23m is brought into contact with the inner holder 23n to be in conduction is shown as an ellipse surrounded by a broken line.
(force applying member 23 c)
The urging member 23c urges the inner holder 23n upward. The urging member 23c is an elastic member. The urging member 23c is, for example, a coil spring. The urging member 23c is disposed between the outer holder 23m and the inner holder 23n. More specifically, the urging member 23c is disposed between the lower portion 23mc of the outer holder 23m and the upper portion 23na of the inner holder 23n. The urging member 23c may be formed of an electric conductor. The urging member 23c is formed by a conductor, so that the conduction between the outer holder 23m and the inner holder 23n can be reinforced by the urging member 23c.
(O-ring 23 d)
The O-ring 23d ensures air tightness between the lift pin 23a and the holder 23b. An O-ring 23d is provided in the annular groove 23mg of the outer holder 23m. The O-ring 23d is interposed between the upper portion 23a1 of the lift pin 23a and the ring groove 23mg when the lift pin 23a is in the retracted state. The O-ring 23d is interposed between the upper portion 23a1 of the lift pin 23a and the annular groove 23mg, so that the O-ring 23d ensures the airtight seal between the lift pin 23a and the holder 23b.
(connection portion 23 e)
The connection portion 23e connects the body portion 21 and the lifting portion 23f. The connection portion 23e is formed of, for example, a bellows. The connection portion 23e is formed of a conductive member.
(lifting part 23 f)
The lifting portion 23f moves the lifting pin 23a in the vertical direction. The lifting portion 23f is constituted by a motor, for example. The lifting portion 23f moves the lifting pin 23a in the vertical direction by driving the motor.
The elevating portion 23f can adjust the distance between the upper surface 23aA of the upper end of the elevating pin 23a and the mounting surface 20S. That is, the elevating portion 23f can adjust the distance between the upper surface 23aA of the elevating pin 23a and the mounting surface 20S. By adjusting the distance between the upper surface 23aA of the lift pin 23a and the mounting surface 20S, the electric field distribution can be adjusted. For example, the upper portion 23a1 of the lift pin 23a is adjusted to be located near the glass substrate G. Specifically, the distance between the upper portion 23a1 of the lift pin 23a and the mounting surface 20S on which the glass substrate G is mounted is adjusted to be 0.02 mm or more and 0.2 mm or less, for example, 0.06 mm. In the case of the adjustment interval, the adjustment is performed in a state where the side surface 23aC of the inclined portion 23a2 of the lift pin 23a is in contact with the inclined surface 23nA of the upper end of the inner holder 23n. That is, the urging member 23c urges the inner holder 23n, and urges the side surface 23aC while bringing the inclined surface 23nA into contact with the side surface 23aC, and in this state, the adjustment is performed.
[ Power supply portion 30]
The power supply unit 30 supplies high-frequency power to the base material 21a provided on the substrate stage 20. The power supply unit 30 is connected to the base material 21a via a power supply line 30 w. The power supply unit 30 includes a high-frequency power supply 31a and a high-frequency power supply 31b, and a matching unit 32a and a matching unit 32b. The feeder line 30w branches into a feeder line 30wa and a feeder line 30wb. The branched power supply line 30wa is connected to the matching unit 32 a. The branched power supply line 30wb is connected to the matching unit 32b.
The high-frequency power supply 31a is a high-frequency power supply for generating plasma. The frequency of the high-frequency power generated by the high-frequency power supply 31a is, for example, 13.56 mhz. The high-frequency power supply 31a outputs high-frequency power to the matcher 32 a. The matching unit 32a matches the impedance, and outputs the high-frequency power for generating plasma to the substrate 21a via the power supply lines 30wa and 30 w.
The high-frequency power supply 31b is a bias voltage generating high-frequency power supply. The frequency of the high-frequency power generated by the high-frequency power supply 31b is, for example, 3.2 mhz. The high-frequency power supply 31b outputs high-frequency power to the matcher 32b. The matching unit 32b matches the impedance, and outputs the high-frequency power for bias generation to the substrate 21a via the power supply lines 30wb and 30 w.
[ gas supply portion 40]
The gas supply unit 40 supplies a process gas for processing the glass substrate G to the process container 10. The gas supply unit 40 includes a process gas supply source 41, a mass flow controller 42, and a valve 43.
The process gas supply source 41 supplies a gas for processing the glass substrate G. For example, as a process gas for etching a metal film, a silicon oxide film, a silicon nitride film, or the like formed on the glass substrate G, the process gas supply source 41 supplies a halogen gas, oxygen gas, argon gas, or the like, which is a gas commonly used in this field.
The mass flow controller 42 adjusts the flow rate of the process gas supplied from the process gas supply source 41. The process gas whose flow rate is adjusted by the mass flow controller 42 is supplied to the showerhead 11 through the process gas supply pipe 40p via the valve 43.
[ exhaust portion 50]
The exhaust unit 50 exhausts the processing space 10S of the processing container 10. The exhaust unit 50 includes a vacuum pump 51. The vacuum pump 51 is connected to the exhaust pipe 15. The vacuum pump 51 is, for example, a turbo molecular pump.
The power supply unit 30 and the gas supply unit 40 may be collectively referred to as a plasma generating unit.
Substrate processing method
A substrate processing method using the substrate processing apparatus 1 provided with the substrate stage 20 according to the present embodiment will be described. Fig. 6 is a flowchart illustrating a substrate processing method using the substrate processing apparatus 1 including the substrate stage 20 according to the present embodiment. The details of the steps of the substrate processing method according to the present embodiment will be described with reference to fig. 6.
(step S10)
At the start of the process, the glass substrate G is fed into the process container 10 of the substrate processing apparatus 1. Specifically, the glass substrate G is transported from the substrate feed/discharge port 16 to the inside of the processing container 10 by the transport device with the gate valve 17 opened.
(step S20)
Then, the lift pins 23a are raised to protrude from the mounting surface 20S. Then, the fed glass substrate G is placed on the support surface of the protruding lift pins 23a. Then, the glass substrate G is supported by the lift pins 23a.
The conveyor device, which has sent the glass substrate G in, is withdrawn from the processing container 10. Then, the gate valve 17 is set to be closed.
(step S30)
Next, the lift pin 23a is lowered and accommodated in the pin hole 21h. When the lift pins 23a are lowered and accommodated in the pin holes 21h, the glass substrate G is placed on the convex portions 21c and the banks 21d. The glass substrate G is placed on the convex portion 21c and the bank 21d, and thus the glass substrate G is placed on the placement surface 20S.
(step S40)
Next, the lift pin 23a is brought into contact with the inner holder 23n. The lifting pin 23a is lowered and accommodated in the pin hole 21h. When the lift pin 23a is lowered and accommodated in the pin hole 21h, the side surface 23aC of the lift pin 23a contacts the inclined surface 23nA of the inner holder 23n. When the side surface 23aC of the lift pin 23a contacts the inclined surface 23nA of the inner holder 23n, the lift pin 23a is in conduction with the inner holder 23n. That is, when the lift pin 23a is brought into contact with the inner holder 23n, the lift pin 23a is in conduction with the inner holder 23n. The lift pin 23a is electrically connected to the base 21a by conduction between the lift pin 23a and the inner holder 23n.
(step S50)
Subsequently, the glass substrate G is subjected to plasma treatment. In other words, the glass substrate G is processed by plasma. Specifically, the process gas is supplied from the gas supply unit 40, and the power is supplied from the power supply unit 30, so that the plasma process is performed. After the plasma processing is completed, the processing gas is exhausted by the exhaust unit 50.
(step S60)
After the plasma processing on the glass substrate G is completed, the lift pins 23a are lifted up and protrude from the mounting surface 20S. Then, the glass substrate G subjected to the plasma treatment is lifted up by the protruding lift pins 23a.
(step S70)
Next, the glass substrate G is sent out from the inside of the processing container 10 of the substrate processing apparatus 1. Specifically, the transport device is moved from the substrate feed/discharge port 16 into the processing container 10 with the gate valve 17 opened. Then, the glass substrate G is placed on a conveyor and is sent out from the inside of the processing container 10.
According to the substrate stage 20 of the present embodiment, it is possible to suppress the electric field from becoming uneven in the substrate stage 20 functioning as the lower electrode during plasma processing. According to the substrate stage 20 of the present embodiment, the electric field is suppressed from becoming uneven, so that the substrate processing can be suppressed from becoming uneven at the position corresponding to the lift pins.
The substrate stage 20 of the present embodiment functions as a lower electrode in the substrate processing apparatus 1 when performing plasma processing. The substrate mounting table 20 serving as a lower electrode includes a lift pin 23a for lifting and lowering a glass substrate G serving as an example of a substrate. The base 21a of the substrate stage 20 has a pin hole 21h to move the lift pins 23a up and down.
Since the base material 21a has the pin holes 21h, when the substrate stage 20 is caused to function as a lower electrode, there is a case where the electric field is not uniform at the portions of the pin holes 21h. According to the substrate mounting table 20 of the present embodiment, the lift pins 23a accommodated in the pin holes 21h are electrically connected to the base material 21a, and the electric field is prevented from becoming uneven in the pin holes 21h.
Specifically, the substrate stage 20 of the present embodiment includes the lift pins 23a formed of a conductive member in the pin holes 21h. The substrate mounting table 20 of the present embodiment further includes a holder 23b formed of a conductive member at a portion communicating with the pin hole 21h of the base 21 a. The diameter of the lift pin 23a is made larger at the upper portion 23a1 and smaller at the lower portion 23a3, and the lift pin has a stepped inclined portion 23a2. The following structure is provided: at the side surface 23aC of the inclined portion 23a2, the lift pin 23a contacts the holder 23b when the lift pin 23a is accommodated.
In addition, the holder 23b includes an outer holder 23m and an inner holder 23n which are coaxial. When the lift pin 23a is stored, the inclined surface 23nA of the upper portion 23nA of the inner holder 23n contacts the inclined portion 23a2. The inner holder 23n is supported by the outer holder 23m via a biasing member 23c. The inner holder 23n is supported by the outer holder 23m via the urging member 23c, whereby the inner holder 23n can move up and down. The height of the tip of the lift pin 23a at the time of storage can be adjusted by the vertical movement of the inner holder 23n.
Further, by making the conductive connection with the base material 21a at the substantially center of the lift pin 23a, the capacitance component can be reduced as compared with the case where the conductive connection with the base material 21a is made at the lower end of the lift pin 23a. In addition, when the lift pins 23a are stored, the height of the lift pins 23a can be easily adjusted while leaving a margin for adjusting the height.
In the above description, the case of processing the glass substrate G has been described, but the processed substrate is not limited to the glass substrate, and may be a substrate such as a semiconductor substrate formed of silicon, gallium, an alloy thereof, or the like.
It should be understood that the substrate mounting table, the substrate processing apparatus, and the substrate processing method of the present embodiment disclosed herein are illustrative in all respects and are not restrictive. For example, in the above description, the case of the capacitive coupling type parallel plate plasma etching apparatus was described as the substrate processing apparatus, but the plasma apparatus may be another type such as an inductive coupling type plasma apparatus. The substrate processing is not limited to etching processing, and may be other substrate processing such as film formation processing and ashing processing. The above-described embodiments can be modified and improved in various forms without departing from the scope of the appended claims and their gist. The matters described in the above embodiments may be structured otherwise within the range of no contradiction, and may be combined within the range of no contradiction.

Claims (11)

1. A substrate mounting table having a mounting surface on which a substrate is mounted, wherein,
the substrate mounting table includes:
a base material positioned below the mounting surface and made of a conductor;
a lift pin made of a conductor, which is lifted and lowered relative to the mounting surface, the lift pin having a step between an upper portion and a lower portion, the diameter of the upper portion being larger than the diameter of the lower portion;
a pin hole formed in the base material and opened to the mounting surface, the pin hole being configured to allow the lifting pin to protrude and retract; and
a holder including a through hole through which the lift pin passes, the holder being provided on the base material and configured of a conductor,
the holder is provided with an outer holder and an inner holder having a common central axis,
the through hole is formed on the central axis of the inner holder in a manner that the lifting pin can move up and down,
the diameter of the through hole is smaller than the diameter of the upper part of the lifting pin,
the inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder.
2. The substrate mounting table according to claim 1, wherein,
when the lift pin is accommodated in the pin hole, the step of the lift pin contacts an upper end of the through hole of the inner holder, and the lift pin is electrically connected to the base material via the inner holder and the outer holder.
3. The substrate mounting table according to claim 2, wherein,
the distance between the upper end of the lift pin and the mounting surface can be adjusted in a state where the step of the lift pin is in contact with the upper end of the inner holder.
4. The substrate mounting table according to any one of claims 1 to 3, wherein,
a dielectric layer with an electrostatic adsorption electrode embedded therein is arranged on the upper part of the base material,
the upper surface of the dielectric layer serves as the mounting surface.
5. The substrate mounting table according to any one of claims 1 to 4, wherein,
the substrate mounting table further includes an O-ring that seals between the outer holder and the upper portion of the lift pin when the lift pin is accommodated in the pin hole.
6. A substrate processing apparatus processes a substrate in the interior of a processing container, wherein,
the substrate processing apparatus includes:
a substrate mounting table disposed inside the processing container and mounting the substrate thereon; and
a plasma generating unit that generates a plasma for processing the substrate in the processing container,
the substrate mounting table having a mounting surface on which the substrate is mounted includes:
a base material positioned below the mounting surface and made of a conductor;
a lift pin made of a conductor, which is lifted and lowered relative to the mounting surface, the lift pin having a step between an upper portion and a lower portion, the diameter of the upper portion being larger than the diameter of the lower portion;
a pin hole formed in the base material and opened to the mounting surface, the pin hole being configured to allow the lifting pin to protrude and retract; and
a holder including a through hole through which the lift pin passes, the holder being provided on the base material and configured of a conductor,
the holder is provided with an outer holder and an inner holder having a common central axis,
the through hole is formed on the central axis of the inner holder in a manner that the lifting pin can move up and down,
the diameter of the through hole is smaller than the diameter of the upper part of the lifting pin,
the inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder.
7. The substrate processing apparatus according to claim 6, wherein,
when the lift pin is accommodated in the pin hole, the step of the lift pin contacts an upper end of the through hole of the inner holder, and the lift pin is electrically connected to the base material via the inner holder and the outer holder.
8. The substrate processing apparatus according to claim 7, wherein,
the distance between the upper end of the lift pin and the mounting surface can be adjusted in a state where the step of the lift pin is in contact with the upper end of the inner holder.
9. The substrate processing apparatus according to any one of claims 6 to 8, wherein,
a dielectric layer with an electrostatic adsorption electrode embedded therein is arranged on the upper part of the base material,
the upper surface of the dielectric layer serves as the mounting surface.
10. The substrate processing apparatus according to any one of claims 6 to 9, wherein,
the substrate processing apparatus further includes an O-ring that seals between the outer holder and the upper portion of the lift pin when the lift pin is accommodated in the pin hole.
11. A substrate processing method for processing a substrate in a processing container of a substrate processing apparatus, wherein,
the substrate processing apparatus includes:
a substrate mounting table disposed inside the processing container and mounting the substrate thereon; and
a plasma generating unit that generates a plasma for processing the substrate in the processing container,
the substrate mounting table having a mounting surface on which the substrate is mounted includes:
a base material positioned below the mounting surface and made of a conductor;
a lift pin made of a conductor, which is lifted and lowered relative to the mounting surface, the lift pin having a step between an upper portion and a lower portion, the diameter of the upper portion being larger than the diameter of the lower portion;
a pin hole formed in the base material and opened to the mounting surface, the pin hole being configured to allow the lifting pin to protrude and retract; and
a holder including a through hole through which the lift pin passes, the holder being provided on the base material and configured of a conductor,
the holder is provided with an outer holder and an inner holder having a common central axis,
the through hole is formed on the central axis of the inner holder in a manner that the lifting pin can move up and down,
the diameter of the through hole is smaller than the diameter of the upper part of the lifting pin,
the inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder,
the substrate processing method comprises the following steps:
feeding the substrate into the processing container;
lifting pins are raised to protrude to a position above the mounting surface, and the substrate is supported;
lowering the lift pins to be accommodated in the pin holes, and placing the substrate on the placement surface;
contacting the lift pin with the inner holder to electrically communicate the lift pin with the substrate; and
and processing the substrate by using the plasma.
CN202310202363.2A 2022-03-18 2023-03-06 Substrate mounting table, substrate processing apparatus, and substrate processing method Pending CN116779405A (en)

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JP2022-043800 2022-03-18

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