CN116706689A - Distributed multi-single-tube semiconductor laser beam combining device - Google Patents
Distributed multi-single-tube semiconductor laser beam combining device Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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Abstract
The embodiment of the disclosure provides a distributed multi-single-tube semiconductor laser beam combining device, which comprises: the multi-single-tube semiconductor laser space beam combining system (A) comprises a plurality of semiconductor laser space beam combining single modules (1), wherein the semiconductor laser space beam combining single modules (1) are overlapped with light spots in the slow axis direction, the semiconductor laser space beam combining single modules (1) comprise a plurality of single-tube semiconductor lasers, and the single-tube semiconductor lasers are overlapped with light spots in the fast axis direction; the grating spectrum regulation and front cavity common aperture spectrum beam combining system (B) is used for locking light beams on different center wavelengths, and compressing the spectrum width of the laser in the fast axis direction to perform common aperture beam combining output; a fast and slow axis conversion system (C) for performing fast and slow axis conversion and homogenizing the fast and slow axis beam quality; and the optical fiber coupling system (D) is used for coupling the light beam into the optical fiber and outputting the light beam.
Description
Technical Field
The disclosure relates to the technical field of lasers, in particular to a beam combining device of a distributed multi-single-tube semiconductor laser.
Background
The semiconductor laser has the advantages of wide wavelength coverage, high electro-optical conversion efficiency, small volume, good stability, low cost, long service life and the like, and has wide application prospect in a plurality of fields such as military national defense, civil processing, health care, scientific and technical research and the like; however, the current commercial single-tube semiconductor laser has the defects of low output power, poor beam quality and the like, so that the direct application of the commercial single-tube semiconductor laser is limited. The spectrum beam combining technology based on the diffraction optical element can ensure high beam quality while realizing the amplification of the output power of the semiconductor laser, and theoretically the beam quality after beam combination is equivalent to that of a single light-emitting unit participating in beam combination.
The spectrum beam combining technology directly utilizes the semiconductor laser to form a high-efficiency and compact laser system without a conversion process of an intermediate pump, so that the light-light conversion efficiency of the spectrum beam combining system is higher, the beam quality of the laser after beam combination is equivalent to that of a sub-light-emitting unit participating in beam combination, the defect of poor beam quality of the semiconductor laser after spatial beam combination is overcome, and the light-emitting brightness of the semiconductor laser is greatly improved.
At present, a semiconductor laser spectrum beam combining system generally uses a bar or a stacked array as a beam combining object, but the small effect of the bar and the stacked array has larger influence on beam combining, and meanwhile, BTS (beam shaping element) is needed before the grating is used for shaping the light beam, and the bar and the stacked array have larger influence on the performance of the system due to small volume and heat dissipation. For the stacked array, spectrum beam combination is carried out on a fast axis when a BTS is used, the difference between the beam quality of the fast axis and the beam quality of the output beam is larger, and spectrum beam combination is carried out on a slow axis when the BTS is not used, because the beam quality of the slow axis changes along with the change of current, and for the stacked array, a slow axis collimating mirror is directly used, the slow axis collimating effect is poor, and the subsequent optical fiber coupling is not facilitated.
Disclosure of Invention
In view of the above problems, the present invention provides a beam combining device for a distributed multi-single-tube semiconductor laser, so as to solve the problem of the existing spectrum beam combining system.
One aspect of the present disclosure provides a distributed multi-single tube semiconductor laser beam combining device, including: the multi-single-tube semiconductor laser spatial beam combining system comprises a plurality of semiconductor laser spatial beam combining single modules, wherein the semiconductor laser spatial beam combining single modules are overlapped with light spots in the slow axis direction, the semiconductor laser spatial beam combining single modules comprise a plurality of single-tube semiconductor lasers, and the single-tube semiconductor lasers are overlapped with light spots in the fast axis direction; the grating spectrum regulation and control system and the front cavity common aperture spectrum beam combination system are used for regulating and controlling light beams output by the multi-single-tube semiconductor laser spatial beam combination system at fixed spectrum intervals in the fast axis direction, locking the light beams on different center wavelengths, compressing the spectrum width of each laser beam in the fast axis direction, and carrying out common aperture beam combination output on the light beams with locking wavelengths which are incident to the gratings in different directions; the fast-slow axis conversion system is used for carrying out fast-slow axis conversion on the light beams output by the grating spectrum regulation and control and front cavity common aperture spectrum beam combination system; and the optical fiber coupling system is used for coupling the light beam subjected to the fast-slow axis conversion by the fast-slow axis conversion system into an optical fiber for output.
Optionally, the semiconductor laser spatial beam combining single module further includes: a fast axis collimator for collimating the plurality of single-tube semiconductor lasers in a fast axis direction, the plurality of single-tube semiconductor lasers being arranged along the fast axis direction; a slow axis collimating mirror for collimating the plurality of single-tube semiconductor lasers in a slow axis direction; and the fast axis stepped reflecting mirror is used for enabling the light spots of the plurality of single-tube semiconductor lasers to be spatially arranged in the fast axis direction.
Optionally, the spatial beam combining system of the multi-single-tube semiconductor laser further comprises: a right angle prism; the semiconductor laser spatial beam combining single modules are symmetrically arranged on two sides of the right-angle prism, and light beams are emitted to the right-angle prism at an incident angle of 45 degrees; the right-angle prism reflects the light beams emitted by the semiconductor laser spatial beam combination single modules, so that light spots of the light beams of the semiconductor laser spatial beam combination single modules are spatially arranged along the slow axis direction.
Optionally, the grating spectrum regulation and control and front cavity common aperture spectrum beam combining system comprises: the half wave plate is used for adjusting the polarization state of the light beam output by the spatial beam combination system of the multiple single-tube semiconductor lasers, so that the light beam is matched with the single polarization state of the plane diffraction grating; a cylindrical lens for focusing the light beam to the planar diffraction grating in a fast axis direction; a planar diffraction grating for diffracting the light beam; the output coupling mirror is used for forming an outer cavity with the rear cavity of each single-tube semiconductor laser, and the single-tube semiconductor lasers at different positions in the fast axis direction are locked at different wavelengths by combining the dispersion action of the plane diffraction grating, wherein after the single-tube semiconductor lasers are acted by the output coupling mirror, light beams with different wavelengths are incident to the plane diffraction grating at different incident angles and are emitted at the same diffraction angle, and the formed spectrum is combined; a first reflector for reflecting the spectrally combined beam out; the multi-single-tube semiconductor laser space beam combination system and the plane diffraction grating are respectively arranged on front and rear focuses of the cylindrical lens.
Optionally, the fast and slow axis conversion system includes a second mirror, a third mirror, a fourth mirror and a fifth mirror, where the reflection directions of the mirrors are different, and the fast and slow axis conversion system is used to perform multiple fast and slow axis direction conversion on the light beams output by the grating spectrum regulation and control and front cavity common aperture spectrum beam combining system.
Optionally, the optical fiber coupling system includes: a focusing lens which is a single aspheric lens or a combination of a group of aspheric cylindrical lenses and is used for focusing the light beams output by the fast-slow axis conversion system; and the port of the optical fiber is arranged at the back focus of the focusing mirror.
Optionally, the fast axis collimating lens is an aspheric cylindrical lens, the slow axis collimating lens is a spherical cylindrical lens, and the surfaces of the fast axis collimating lens and the slow axis collimating lens are plated with a strong light-resistant antireflection film; the incident surface of the fast axis stepped reflecting mirror is plated with a strong light high-reflectivity dielectric film; the front cavity of the single-tube semiconductor laser is plated with an antireflection film, and the rear cavity is plated with a high-reflection film.
Optionally, the incident surface of the right-angle prism is plated with a strong light high-reflectivity dielectric film.
Optionally, the cylindrical lens is an aspheric cylindrical lens, and the surface of the cylindrical lens is plated with a strong light-resistant antireflection film; the plane diffraction grating is a transmission grating, and the substrate material is fused quartz; the output coupling mirror is a partial mirror coated with a partial reflectivity film.
Optionally, the single-tube semiconductor laser is any one of a semiconductor laser with a wide emitting surface structure, a conical semiconductor laser, a narrow ridge semiconductor laser, a MOPA semiconductor laser, a photonic crystal semiconductor laser and an oversized/large optical cavity semiconductor laser, and the rear cavity surface of the single-tube semiconductor laser, the plane diffraction grating and the output coupling mirror form an external cavity output laser beam.
The above at least one technical scheme adopted in the embodiment of the disclosure can achieve the following beneficial effects:
according to the method, the results of the fast and slow axis collimation and the spatial arrangement of the multiple single-tube semiconductor lasers are used as the sub-modules of the whole beam combining device, the distributed spectrum beam combining of the multiple modules avoids the influence of a smile effect on the whole collimation effect when a bar or a stacked array is used as a light source, and further, the independent single-tube semiconductor lasers are beneficial to solving the heat transfer problem of the whole system, facilitating the heat dissipation of chips and improving the integral performance of the system;
the multi-module spectrum beam combination avoids the adjustment error of the BTS in the spectrum beam combination to influence the whole, and after the fast-slow axis conversion system is moved to the spectrum beam combination, the fast-slow axis beam quality of the fast-slow axis spectrum beam combination of multiple slow axes can be homogenized, the subsequent optical fiber coupling is facilitated, and the influence of poor fast-slow axis conversion on the spectrum beam combination is avoided.
Drawings
For a more complete understanding of the present disclosure and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
fig. 1 schematically illustrates a schematic diagram of a beam combining device of a distributed multi-single-tube semiconductor laser in a slow axis direction provided in an embodiment of the present disclosure;
fig. 2 schematically illustrates a schematic diagram of a beam combining device of a distributed multi-single-tube semiconductor laser in a fast axis direction provided in an embodiment of the disclosure;
fig. 3 schematically illustrates a schematic light spot diagram of a light source aligned according to an embodiment of the disclosure;
reference numerals:
a-multiple single-tube semiconductor laser space beam combining system, B-grating spectrum regulation and front cavity common aperture spectrum beam combining system, C-fast and slow axis conversion system and D-optical fiber coupling system; the laser comprises a 1-semiconductor laser space beam combination single module, a 2-right angle prism, a 3-half wave plate, a 4-cylindrical lens, a 5-plane diffraction grating, a 6-output coupling mirror, a 7-first reflecting mirror, an 8-second reflecting mirror, a 9-third reflecting mirror, a 10-fourth reflecting mirror, an 11-fifth reflecting mirror, a 12-focusing mirror and a 13-optical fiber.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be construed to have meanings consistent with the context of the present specification and should not be construed in an idealized or overly formal manner.
As shown in fig. 1 and 2, a beam combining device for a distributed multi-single-tube semiconductor laser according to an embodiment of the present disclosure includes: the optical fiber output is completed by the optical fiber coupling system D through the grating spectrum regulation and control system B, the front cavity common aperture spectrum beam combination system C and the optical fiber coupling system.
The multi-single-tube semiconductor laser spatial beam combination system A comprises a plurality of semiconductor laser spatial beam combination single modules 1, the plurality of semiconductor laser spatial beam combination single modules 1 are overlapped with light spots in the slow axis direction, the semiconductor laser spatial beam combination single modules 1 comprise a plurality of single-tube semiconductor lasers, and the plurality of single-tube semiconductor lasers are overlapped with light spots in the fast axis direction.
In this embodiment, the semiconductor laser spatial beam combining single module 1 further includes: a plurality of single tube semiconductor lasers, a Fast Axis Collimator (FAC), a Slow Axis Collimator (SAC) and a fast axis stepped mirror. The laser beam is output to a grating spectrum regulation and control and front cavity common aperture spectrum beam combining system B from one side of a front cavity of the multi-single-tube semiconductor laser spatial beam combining system A.
Preferably, the fast axis collimating lens is an aspheric cylindrical lens, the slow axis collimating lens is a spherical cylindrical lens, the surfaces of the fast axis collimating lens and the slow axis collimating lens are plated with strong light-resistant antireflection films, and the incidence surfaces of the fast axis stepped reflecting lens and the right angle prism 2 are plated with strong light high-reflectivity dielectric films.
The multi-single-tube semiconductor laser spatial beam combining system a in the present embodiment further includes a right-angle prism 2. The semiconductor laser spatial beam combination single modules 1 are symmetrically arranged on two sides of the right-angle prism 2, and all emit light beams to the right-angle prism 2 at an incident angle of 45 degrees; the right-angle prism 2 reflects the light beams emitted by the plurality of semiconductor laser spatial beam combination single modules 1, so that the light spots of the light beams of the plurality of semiconductor laser spatial beam combination single modules 1 are spatially arranged along the slow axis direction.
And the grating spectrum regulation and front cavity common aperture spectrum beam combination system B is used for regulating and controlling the light beams output by the multi-single-tube semiconductor laser spatial beam combination system A at fixed spectrum intervals in the fast axis direction, locking the light beams on different center wavelengths, narrowing the spectrum width of each laser beam in the fast axis direction, and carrying out common aperture beam combination output on the light beams with locking wavelengths which are incident to the gratings in different directions.
In this embodiment, the grating spectrum modulation and front cavity common aperture spectrum beam combining system B includes a half-wave plate 3, a cylindrical lens 4, a planar diffraction grating 5, an output coupling mirror 6 and a first reflecting mirror 7 sequentially arranged along the beam output direction. The half-wave plate 3 is used for adjusting the polarization state of the light beam output by the spatial beam combination system A of the multiple single-tube semiconductor lasers, so that the light beam is matched with the single polarization state of the plane diffraction grating 5; the cylindrical lens 4 is used for focusing the light beam to the plane diffraction grating 5 in the fast axis direction; the plane diffraction grating 5 is used for diffracting the light beam; the output coupling mirror 6 is used for forming an external cavity with the rear cavity of each single-tube semiconductor laser, and the single-tube semiconductor lasers at different positions in the fast axis direction are locked at different wavelengths by combining the dispersion action of the plane diffraction grating 5, wherein after the single-tube semiconductor lasers are acted by the output coupling mirror 6, light beams with different wavelengths are incident to the plane diffraction grating 5 at different incident angles and are emitted at the same diffraction angle, so that spectrum combination is formed; the first reflecting mirror 7 is used for reflecting and outputting the spectrum combined beam; wherein, the space beam combination system A of the multi-single-tube semiconductor laser and the plane diffraction grating 5 are respectively arranged on the front focus and the back focus of the cylindrical lens 4. After the light beams with different wavelengths are incident to the plane diffraction grating 5 at different incident angles, the light beams are emitted at the same diffraction angle, and the formed spectrum combined light beams are output to the fast-slow axis conversion system C after passing through the first reflecting mirror 7.
Preferably, the cylindrical lens 4 is an aspheric cylindrical lens, and the surface of the cylindrical lens is plated with a strong light-resistant antireflection film.
Preferably, the plane diffraction grating 5 is a transmission grating, the substrate material is fused quartz, and parameters such as the central wavelength, the grating period and the like are designed to be matched with parameters such as the central wavelength, the interval of a light emitting unit, the focal length of the cylindrical lens 4 and the like of a space beam output by the space beam combining system A of the multi-single-tube semiconductor laser; the space beam combination system A of the multi-single-tube semiconductor laser and the grating 5 are respectively arranged on the front focus and the rear focus of the cylindrical lens 4.
Preferably, the output coupling mirror 6 is a partially reflective mirror coated with a partially reflective film.
The single-tube semiconductor laser is any one of a semiconductor laser with a wide emitting surface structure, a conical semiconductor laser, a narrow ridge semiconductor laser, a MOPA semiconductor laser, a photonic crystal semiconductor laser and an oversized/large optical cavity semiconductor laser, and the back cavity surface of the single-tube semiconductor laser can form an external cavity output laser beam with the plane diffraction grating 5 and the output coupling mirror 6.
The front cavity of the single-tube semiconductor laser is plated with an antireflection film, and the rear cavity is plated with a high-reflection film; n single-tube semiconductor lasers are arranged in the fast axis direction of the semiconductor laser space beam combination single module 1, and the number N is designed in a matched mode with parameters such as the gain bandwidth range of the single-tube semiconductor laser chip, the focal length of the cylindrical lens 4, the spacing of the single-tube semiconductor lasers in the fast axis direction and the like.
The fast and slow axis conversion system C is a reflector group formed by a second reflector 8, a third reflector 9, a fourth reflector 10 and a fifth reflector 11 along different arrangement directions, wherein the reflectors are strong light high-reflectivity reflectors coated with dielectric films, and the reflector group is used for receiving the light beams after spectrum beam combination, converting the light beams in the fast and slow axis directions so as to achieve the effect of homogenizing the fast and slow axis light beam quality, and outputting the converted light beams to the optical fiber coupling system D.
And the optical fiber coupling system D is used for coupling the light beam subjected to the fast-slow axis conversion by the fast-slow axis conversion system C into an optical fiber for output. The optical fiber coupling system D comprises a focusing mirror 12 and an optical fiber 13, wherein a strong light resistant antireflection film is plated on the surface of the focusing mirror 12, the front end face of the optical fiber 13 is placed at the rear focal point of the focusing mirror 12, and the light beam converted by the fast and slow axes is focused to the front end face of the optical fiber 13 through the focusing mirror 12, so that optical fiber coupling is realized, and the light beam is output at the rear end face of the optical fiber.
The focusing lens 12 in the optical fiber coupling system D may be a single aspheric lens or a combination of a set of aspheric cylindrical lenses, and its parameters are designed to match the parameters of the light beam output by the fast-slow axis conversion system C, the optical fiber, etc.
According to the distributed multi-single-tube semiconductor laser beam combining device provided by the embodiment of the disclosure, a plurality of semiconductor laser spatial beam combining single modules are used as beam combining subunits, compared with bars or stacked arrays, the distributed multi-single-tube semiconductor laser beam combining device is better in heat dissipation performance, and the influence of heat dissipation on the stability of the whole system is greatly reduced; secondly, a plurality of semiconductor laser spatial beam combination single modules are used as beam combination sub-units, compared with a bar or a stacked array, output beams do not need to be further collimated, each single-tube semiconductor laser in the modules is collimated respectively, the effect is better and more stable, and the influence of the smi le effect on a system is avoided; in addition, compared with the spectrum beam combination in the slow axis direction of the stacked array, the space beam combination single module of the plurality of semiconductor lasers can use a slow axis collimating lens to have larger focal length, better collimating effect on the slow axis, smaller unit line width and narrower spectrum after spectrum beam combination, and reduce the influence of current on the output spectrum; compared with the spectrum beam combining in the fast axis direction of the stacked array, before the spectrum beam combining, the BTS is not required to shape the light beam, the function of the BTS is moved to the front of the optical fiber coupling system, the influence of the error of the BTS on the spectrum beam combining result is avoided, and meanwhile, the light beam quality of the fast axis and the slow axis after the spectrum beam combining can be homogenized, so that the optical fiber coupling is facilitated.
Fig. 3 schematically illustrates a schematic light spot diagram of a collimated light source according to an embodiment of the present disclosure. As shown in fig. 3, the emergent light spots after being collimated by the spatial beam combination system A of the multi-single-tube semiconductor laser are uniformly arranged, and the collimation effect is good.
Those skilled in the art will appreciate that the features recited in the various embodiments of the disclosure and/or in the claims may be provided in a variety of combinations and/or combinations, even if such combinations or combinations are not explicitly recited in the disclosure. In particular, the features recited in the various embodiments of the present disclosure and/or the claims may be variously combined and/or combined without departing from the spirit and teachings of the present disclosure. All such combinations and/or combinations fall within the scope of the present disclosure.
While the present disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents. The scope of the disclosure should, therefore, not be limited to the above-described embodiments, but should be determined not only by the following claims, but also by the equivalents of the following claims.
Claims (10)
1. The utility model provides a distributed many single tube semiconductor laser beam combining device which characterized in that includes:
the multi-single-tube semiconductor laser spatial beam combining system (A) comprises a plurality of semiconductor laser spatial beam combining single modules (1), wherein the semiconductor laser spatial beam combining single modules (1) are overlapped with light spots in the slow axis direction, and the semiconductor laser spatial beam combining single modules (1) comprise a plurality of single-tube semiconductor lasers, and the single-tube semiconductor lasers are overlapped with light spots in the fast axis direction;
the grating spectrum regulation and front cavity common aperture spectrum beam combining system (B) is used for regulating and controlling the light beams output by the multi-single-tube semiconductor laser spatial beam combining system (A) at fixed spectrum intervals in the fast axis direction, locking the light beams on different center wavelengths, compressing the spectrum width of each laser beam in the fast axis direction, and carrying out common aperture beam combining output on the light beams with locking wavelengths which are incident to the gratings in different directions;
the fast-slow axis conversion system (C) is used for carrying out fast-slow axis conversion on the light beams output by the grating spectrum regulation and control and front cavity common aperture spectrum beam combination system 1B);
and the optical fiber coupling system (D) is used for coupling the light beam subjected to the fast-slow axis conversion by the fast-slow axis conversion system (C) into an optical fiber for output.
2. The apparatus according to claim 1, characterized in that the semiconductor laser spatial beam combining single module (1) further comprises:
a fast axis collimator for collimating the plurality of single-tube semiconductor lasers in a fast axis direction, the plurality of single-tube semiconductor lasers being arranged along the fast axis direction;
a slow axis collimating mirror for collimating the plurality of single-tube semiconductor lasers in a slow axis direction;
and the fast axis stepped reflecting mirror is used for enabling the light spots of the plurality of single-tube semiconductor lasers to be spatially arranged in the fast axis direction.
3. The apparatus of claim 1, wherein the multi-single tube semiconductor laser spatial beam combining system (a) further comprises:
a right angle prism (2);
the semiconductor laser spatial beam combination single modules (1) are symmetrically arranged on two sides of the right-angle prism (2) in a split mode, and light beams are emitted to the right-angle prism (2) at an incident angle of 45 degrees;
the right-angle prism (2) reflects light beams emitted by the semiconductor laser spatial beam combination single modules (1) to enable light spots of the light beams of the semiconductor laser spatial beam combination single modules (1) to be spatially arranged along the slow axis direction.
4. The apparatus of claim 1, wherein the grating spectral modulation and front cavity common aperture spectral beam combining system (B) comprises:
a half wave plate (3) for adjusting the polarization state of the light beam output by the spatial beam combination system (A) of the multi-single-tube semiconductor laser, so that the light beam is matched with the single polarization state of the plane diffraction grating (5);
a cylindrical lens (4) for focusing the light beam in a fast axis direction to the planar diffraction grating (5);
-a planar diffraction grating (5) for diffracting said light beam;
the output coupling mirror (6) is used for forming an outer cavity with the rear cavity of each single-tube semiconductor laser, and the single-tube semiconductor lasers at different positions in the fast axis direction are locked at different wavelengths by combining the dispersion action of the plane diffraction grating (5), wherein after the single-tube semiconductor lasers are acted by the output coupling mirror (6), light beams with different wavelengths are incident to the plane diffraction grating (5) at different incident angles and are emitted at the same diffraction angle, and the formed spectrum is combined;
a first mirror (7) for reflecting the spectrally combined beam out;
the multi-single-tube semiconductor laser space beam combination system (A) and the plane diffraction grating (5) are respectively arranged on front and rear focuses of the cylindrical lens (4).
5. The device according to claim 1, wherein the fast-slow axis conversion system (C) comprises a second reflecting mirror (8), a third reflecting mirror (9), a fourth reflecting mirror (10) and a fifth reflecting mirror (11), and each reflecting mirror has different reflecting directions, and is used for performing multiple fast-slow axis direction conversion on the light beams output by the grating spectrum regulation and front cavity common aperture spectrum beam combining system (B).
6. The apparatus according to claim 1, wherein the fiber coupling system (D) comprises:
a focusing lens (12) which is a single aspheric lens or a combination of a group of aspheric cylindrical lenses and is used for focusing the light beams output by the fast-slow axis conversion system (C);
and the port of the optical fiber (13) is arranged at the back focus of the focusing mirror (12).
7. The device according to claim 2, wherein the fast axis collimating lens is an aspheric cylindrical lens, the slow axis collimating lens is a spherical cylindrical lens, and surfaces of the fast axis collimating lens and the slow axis collimating lens are coated with a strong light resistant antireflection film; the incident surface of the fast axis stepped reflecting mirror is plated with a strong light high-reflectivity dielectric film; the front cavity of the single-tube semiconductor laser is plated with an antireflection film, and the rear cavity is plated with a high-reflection film.
8. A device according to claim 3, characterized in that the entrance surfaces of the right angle prisms (2) are coated with strong light high reflectivity dielectric films.
9. The device according to claim 5, characterized in that the cylindrical lens (4) is an aspherical cylindrical lens, the surface of which is coated with a glare-resistant antireflection film; the plane diffraction grating (5) is a transmission type grating, and the substrate material is fused quartz; the output coupling mirror (6) is a partially reflective mirror coated with a partially reflective film.
10. The device according to claim 5, wherein the single-tube semiconductor laser is any one of a semiconductor laser with a wide emitting surface structure, a conical semiconductor laser, a narrow ridge semiconductor laser, a MOPA semiconductor laser, a photonic crystal semiconductor laser, and a super large/large optical cavity semiconductor laser, and the rear cavity surface forms an external cavity output laser beam with the plane diffraction grating (5) and the output coupling mirror (6).
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| CN202310429605.1A CN116706689A (en) | 2023-04-20 | 2023-04-20 | Distributed multi-single-tube semiconductor laser beam combining device |
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| CN202310429605.1A CN116706689A (en) | 2023-04-20 | 2023-04-20 | Distributed multi-single-tube semiconductor laser beam combining device |
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| CN202310429605.1A Pending CN116706689A (en) | 2023-04-20 | 2023-04-20 | Distributed multi-single-tube semiconductor laser beam combining device |
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| Country | Link |
|---|---|
| CN (1) | CN116706689A (en) |
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2023
- 2023-04-20 CN CN202310429605.1A patent/CN116706689A/en active Pending
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