CN111326952A - Spectrum beam combining device based on-chip regulation and control semiconductor laser chip - Google Patents
Spectrum beam combining device based on-chip regulation and control semiconductor laser chip Download PDFInfo
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- CN111326952A CN111326952A CN202010084707.0A CN202010084707A CN111326952A CN 111326952 A CN111326952 A CN 111326952A CN 202010084707 A CN202010084707 A CN 202010084707A CN 111326952 A CN111326952 A CN 111326952A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
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Abstract
The invention discloses a spectrum beam combining device based on an on-chip regulation semiconductor laser chip, which comprises a semiconductor laser light source, a conversion lens and a first grating, wherein the semiconductor laser light source is arranged on the chip; the semiconductor laser light source comprises an on-chip regulated semiconductor laser array and a collimating lens; laser beams output by the semiconductor laser light source are incident on the conversion lens, the spatial displacement of each laser beam on the array is converted into angular deviation, and the angular deviation is incident on the grating for diffraction, so that the output of the common-aperture combined beam is realized; or the transformation lens and the first grating are replaced by a second grating and a third grating, the laser beam is incident on the second grating to be diffracted, the diffracted light beam is incident on the third grating to be diffracted, and the output of the combined beam with the same aperture is realized. The invention can directly lock the central wavelength of the laser emitted by the on-chip light-emitting unit at a certain spectrum interval, realizes the decoupling of the spectrum locking regulation part and the spectrum synthesis light path, reduces the system size, and increases the reliability and the engineering feasibility of the system.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a spectrum beam combining device based on an on-chip regulation semiconductor laser chip.
Background
In the prior art, a known technology is that a semiconductor laser has the advantages of wide wavelength coverage, high electro-optic conversion efficiency, small volume, low cost, long service life and the like, and has wide application prospects in multiple fields of military and national defense, industrial processing, health care, scientific research and the like. However, the direct application of the conventional commercial semiconductor laser unit is limited by the defects of low output power, poor beam quality and the like. The spectrum synthesis technology based on external cavity feedback can ensure high beam quality while realizing semiconductor laser output power amplification, theoretically, the quality of the synthesized beam is equivalent to that of a single light-emitting unit participating in synthesis, and an article named as Spectral beam combining of a broad-band-linear laser array in an external enclosure, Daneu V., Sanchez A., Fan T.Y.et. optics Letters, 2000, 25(6), 405-407) describes the basic principle in detail.
The spectrum synthesis technology directly utilizes the semiconductor laser to form a high-efficiency and compact laser system without the conversion process of intermediate pumping, so that the beam quality of the synthesized laser is equivalent to that of the sub-light-emitting units participating in synthesis, the defect of poor beam quality of the semiconductor laser is overcome, and the light-emitting brightness of the semiconductor laser is greatly improved. At present, an external cavity closed-loop beam combination method is generally adopted in the existing semiconductor laser spectrum synthesis laser system, the method is relatively easy to realize, but all elements of the system are in a strong coupling relation, and the reliability is low, which is the defect existing in the prior art.
Disclosure of Invention
The invention aims to: aiming at the existing problems, the open-loop spectrum synthesis device based on the on-chip spectrum regulation semiconductor laser chip is provided. According to the scheme, the semiconductor laser chip with the on-chip spectrum regulation and control structure is used as a spectrum synthesis laser light source, the center wavelength locking and the spectrum width narrowing of each semiconductor laser light source can be realized without any external optical structure, the grating is used for spectrum synthesis, the decoupling among elements is realized, the expansion of the number of synthesis channels is facilitated, and the reliability of the system can be effectively improved.
The technical scheme adopted by the invention is as follows:
a spectrum beam combining device based on an on-chip spectrum regulation semiconductor laser chip comprises a semiconductor laser source and a beam combining mechanism, wherein the semiconductor laser source comprises a semiconductor laser array with on-chip spectrum regulation and control and a collimating lens, the semiconductor laser array is composed of a plurality of light emitting units which are arranged in an array manner, and the on-chip regulation and control is on-chip regulation and control on the central wavelength and the spectrum width of different light emitting units;
the light-emitting unit (a unit forming a semiconductor laser array) comprises an electrothermal tunable grating, a seed source, a mode control area and an amplification area which are sequentially arranged; a distributed Bragg reflector is arranged between the seed source and the mode control area; the mode control area realizes mode filtering of seed source laser through width and length adjustment, so that the mode of the laser entering the amplification area is a single transverse mode;
the structure of the beam combining mechanism is as follows:
the beam combining mechanism comprises a transformation lens and a first grating which are sequentially arranged along the optical path direction of the semiconductor laser light source; laser beams output by the semiconductor laser light source are incident on the conversion lens, the spatial displacement of each laser beam on the array light-emitting unit is converted into angular deviation and the angular deviation is incident on the first grating for diffraction, and common-aperture beam combination output is achieved;
or, the beam combining mechanism is of a double grating structure: the beam combining device comprises a second grating and a third grating which are sequentially arranged along the optical path direction of the semiconductor laser light source, laser beams output by the semiconductor laser light source are incident on the first grating to be diffracted, and the diffracted light beams are incident on the second grating to be diffracted and realize the output of the combined beam with the same aperture.
The invention adopts the semiconductor laser array with the on-chip structure as the spectrum synthesis laser light source, and the on-chip structure can directly lock the central wavelength of each synthesis light source at certain spectrum intervals, thereby realizing the decoupling of the spectrum locking regulation part and the spectrum synthesis light path.
Further, the first grating is a transmission grating or a reflection grating.
Further, the conversion lens is a cylindrical lens of a transmission type or a reflection type.
Furthermore, the semiconductor laser light source and the first grating are respectively arranged on the front focal plane and the back focal plane of the conversion lens; the center wavelength and the grating constant of the first grating are matched with the center wavelength of the semiconductor laser array, the interval of the light emitting units and the focal length of the conversion lens.
Furthermore, the second grating and the third grating are both transmission type plane gratings or are both reflection type plane gratings.
Further, the second grating and the third grating are parallel to each other; the second grating and the third grating are completely the same in central wavelength and grating constant; the grating space and grating parameters of the second grating and the third grating are matched with the central wavelength of the semiconductor laser light source and the interval of the light emitting units.
Further, the collimating lens comprises one or more of a fast axis collimating lens, a slow axis collimating lens and an aspheric collimating lens, and can collimate the light beam output by the semiconductor laser array.
Further, the semiconductor laser array is one of a wide emission surface semiconductor laser, a narrow ridge semiconductor laser, a tapered semiconductor laser, a MOPA semiconductor laser, a photonic crystal semiconductor laser, and an ultra-large/large optical cavity semiconductor laser.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
the invention adopts a semiconductor laser chip with an on-chip structure as a spectrum synthesis laser light source, and the on-chip structure can directly lock the central wavelength of the laser emitted by each synthesis light source light-emitting unit at a certain spectrum interval. Compared with the traditional external cavity structure, the decoupling of the spectrum locking regulation part and the spectrum synthesis light path is realized, the size of the system is reduced, and the reliability and the engineering feasibility of the system are improved.
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
fig. 1 and 2 are two embodiments of a structure of a spectrum beam combining device based on an on-chip control semiconductor laser chip.
Fig. 3 is a structural view of the light emitting unit.
Fig. 4 is a structural diagram of a semiconductor laser array constituted by a plurality of light emitting units.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification (including any accompanying claims, abstract) may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
Example one
Referring to fig. 1 and 2, the present embodiment discloses a spectrum beam combining device based on an on-chip regulation semiconductor laser chip, which includes a semiconductor laser light source and a beam combining mechanism, wherein the semiconductor laser light source includes a semiconductor laser array 1 and a collimating lens 2, the semiconductor laser array 1 is composed of a plurality of light emitting units arranged in an array, and the on-chip regulation is on-chip regulation on the central wavelength and the spectrum width of different light emitting units.
The light-emitting unit comprises an electrothermal tunable grating, a seed source, a mode control area and an amplification area which are sequentially arranged; a distributed Bragg reflector is arranged between the seed source and the mode control area; the mode control area realizes the mode filtering of the seed source laser through the adjustment of the width and the length, so that the mode of the laser entering the amplification area is a single transverse mode.
The structure of the beam combining mechanism is as follows:
the beam combination mechanism comprises a conversion lens 3 and a first grating 4 which are sequentially arranged along the optical path direction of the semiconductor laser light source. The center wavelength and grating constant of the first grating 4 are matched with the center wavelength of the semiconductor laser array 1, the light emitting unit interval, and the focal length of the conversion lens 3. Laser beams output by the semiconductor laser light source are incident on the conversion lens 3, the spatial displacement of each laser beam on the array light-emitting unit is converted into angular deviation and the angular deviation is incident on the first grating 4 for diffraction, and the common-aperture combined beam output is realized;
or, the beam combining mechanism is of a double grating structure: the beam combining device comprises a second grating 5 and a third grating 6 which are sequentially arranged along the optical path direction of the semiconductor laser light source. The parameters such as the position relation, the grating distance, the central wavelength, the grating constant and the like of the second grating 5 and the third grating 6 are matched with the parameters such as the central wavelength, the light-emitting unit interval and the like of the semiconductor laser light source. Laser beams output by the semiconductor laser light source are incident on the first grating 5 to be diffracted, and the diffracted light beams are incident on the second grating 6 to be diffracted, so that the output of the combined beam with the same aperture is realized.
Example two
The embodiment discloses a spectrum beam combining device based on an on-chip regulating semiconductor laser chip, which comprises a semiconductor laser array 1 with an on-chip structure, a collimating lens 2 and a beam combining mechanism, wherein the semiconductor laser array is formed by arraying a plurality of light-emitting units, and the on-chip regulation realized by the on-chip structure is on-chip regulation on the central wavelength and the spectrum width of different light-emitting units. The semiconductor laser array 1 and the collimating lens 2 together constitute a semiconductor laser light source. The laser emitted by the semiconductor laser light source is combined by the beam combining mechanism.
In one embodiment, referring to fig. 1, the beam combining mechanism includes a transforming lens 3 and a first grating 4, the transforming lens 3 is a perspective cylindrical lens or a reflective cylindrical lens, the first grating 4 is a transmissive plane grating or a reflective plane grating, and grating parameters such as a central wavelength and a grating constant of the first grating 4 are designed to match parameters such as a central wavelength of the semiconductor laser array 1, a light emitting unit interval, and a focal length of the transforming lens 3. The light-emitting surface of the semiconductor laser light source and the first grating 4 are respectively arranged on the front focal plane and the back focal plane of the conversion lens 3. Laser beams output by the semiconductor laser light source are incident on the conversion lens 3, the spatial displacement of each laser beam on the array is converted into angular deviation, and the angular deviation is incident on the first grating 4 to be diffracted, so that the common-aperture combined beam output is realized. The on-chip structure locks the central wavelength of the laser beam emitted by each semiconductor light-emitting unit at a certain spectral interval, and the laser beams output by different light-emitting units on the semiconductor laser array 1 are incident on the first grating 4 for diffraction according to a specific angle through the conversion lens 3, so that the light beams emitted by each light-emitting unit are coincided at the far field and the near field simultaneously.
In another embodiment, referring to fig. 2, the beam combining mechanism adopts a dual grating structure, which includes a second grating 5 and a third grating 6 that are parallel to each other, the second grating 5 and the third grating 6 are completely the same in parameters such as central wavelength and grating constant, and the parameters such as grating pitch, central wavelength, and grating constant of the second grating 5 and the third grating 6 are designed to match with the parameters such as central wavelength of the semiconductor laser light source and the interval of the light emitting unit. The second grating 5 and the third grating 6 are both reflection type plane gratings or both transmission type plane gratings. The second grating 5 is arranged on the output light path of the semiconductor laser light source, and the third grating 6 is arranged on the diffraction light path of the second grating 5. Laser beams emitted by the semiconductor laser light source enter the second grating 5 to be diffracted, and the diffracted light beams enter the third grating 6 to be diffracted and realize the output of the combined beam with the same aperture. The distance between the semiconductor laser light source and the first grating 5 is not critical. The on-chip structure of the semiconductor laser array 1 realizes the locking and deviation of the central wavelengths of different laser beams, the deviation amount, the focal length of the conversion lens 3, the reticle of the first grating 4 and the incidence angle; or the pitches of the second grating 5 and the third grating 6 are in corresponding relation with each other.
In one embodiment, the collimating lens 2 includes, but is not limited to, a fast axis collimating lens, a slow axis collimating lens, an aspheric collimating lens, etc. and can collimate the light beam output by the semiconductor laser array. The semiconductor laser array 1 includes, but is not limited to, a wide emitting surface semiconductor laser, a narrow ridge semiconductor laser, a tapered semiconductor laser, a MOPA semiconductor laser, a photonic crystal semiconductor laser, an ultra large/large optical cavity semiconductor laser, and the like.
EXAMPLE III
The embodiment discloses a beam combining mechanism for double grating decoupling strands, which combines laser beams output by a semiconductor laser light source consisting of a plurality of light emitting units arranged in an array manner. As shown in fig. 2, the beam combining mechanism includes a second grating 5 and a third grating 6. The second grating 5 and the third grating 6 are both reflective plane gratings. The second grating 5 and the third grating 6 are placed in parallel. The second grating 5 and the third grating 6 are completely the same in parameters such as central wavelength and grating constant, and the parameters such as grating pitch, central wavelength and grating constant of the second grating 5 and the third grating 6 are matched with the parameters such as central wavelength and light-emitting unit interval of the semiconductor laser light source.
Laser beams output by different light emitting units on the semiconductor laser light source have different wavelengths and are incident on the second grating 5 according to a specific angle to be diffracted, and light beams emitted by different light emitting units are completely overlapped on the third grating 6 and then are emitted along the same direction. And finally, the light beams emitted by each light-emitting unit are coincided at the same time in a far field and a near field, the output power superposition is realized, and the high light beam quality is ensured, wherein the quality of the combined light beam is equivalent to that of a single light-emitting unit theoretically.
The substrate materials of the second grating 5 and the third grating 6 are fused quartz, and the diffraction efficiency is more than 95%. The spacing between the second grating 5 and the semiconductor laser source is not critical.
Example four
As shown in fig. 1, the present embodiment discloses a beam combining mechanism composed of a transforming lens 3 and a first grating 4. The first grating 4 is located on the back focal plane of the transform lens 3. The laser beam combining device combines laser beams output by a semiconductor laser light source consisting of a plurality of light emitting units arranged in an array manner. The 3-bit cylindrical transmission lens of the conversion lens is made of fused quartz, plated with a strong light-resistant antireflection film and has a residual reflectivity of less than 0.5%. The first grating 4 is a transmission-type plane grating, the substrate material is fused quartz, and parameters such as the central wavelength, the grating constant and the like are matched with parameters such as the central wavelength of a semiconductor laser light source, the interval of a light-emitting unit, the focal length of a conversion lens 3 and the like. When the beam combining device is used, the semiconductor laser light source needs to be arranged on the front focal plane of the conversion lens 3.
EXAMPLE five
As shown in fig. 3, the present embodiment discloses the structure of a light emitting unit 101 constituting a semiconductor laser array. The light emitting units 101 are arranged in an array to form a semiconductor laser array, as shown in fig. 4. The light emitting unit 101 includes an electrothermal tunable grating 101a, a seed source 101b, a mode control region 101d, and an amplification region 101e, which are sequentially arranged. Between the seed source 101b and the mode control region 101d, a distributed bragg mirror 101c is provided. The mode control region 101d realizes mode filtering of the seed source laser by adjusting the width and the length, so that the mode of the laser entering the amplification region 101e is a single transverse mode.
In one embodiment, the seed source 101b, the DBR 101c, and the mode control region 101d are all ridge-shaped structures, and the amplification region 101e is a tapered structure, as shown in FIG. 3. The electrically and thermally tunable grating 101a is comprised of an electro-heater 101a-1 and a second distributed bragg mirror 101 a-2. The mode control region 101d filters the mode of the laser light by optimizing the width and length of the ridge.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.
Claims (8)
1. The spectrum beam combining device based on the on-chip regulation and control semiconductor laser chip is characterized by comprising a semiconductor laser light source and a beam combining mechanism, wherein the semiconductor laser light source comprises a semiconductor laser array (1) with on-chip regulation and control and a collimating lens (2), the semiconductor laser array (1) is composed of a plurality of light emitting units (101) which are arranged in an array manner, and the on-chip regulation and control is on-chip regulation and control on the central wavelength and the spectrum width of different light emitting units (101);
the light-emitting unit (101) comprises an electrothermal tunable grating (101a), a seed source (101b), a mode control area (101d) and an amplification area (101d) which are sequentially arranged; a distributed Bragg reflector (101c) is arranged between the seed source (101b) and the mode control area (101 d); the mode control area (101d) realizes mode filtering of seed source laser through adjustment of width and length, so that the mode of the laser entering the amplification area (101e) is a single transverse mode;
the structure of the beam combining mechanism is as follows:
the beam combining mechanism comprises a conversion lens (3) and a first grating (4) which are sequentially arranged along the optical path direction of the semiconductor laser light source, laser beams output by the semiconductor laser light source are incident on the conversion lens (3), the spatial displacement of each laser beam on the array light-emitting unit is converted into angular deviation, and the angular deviation is incident on the first grating (4) to be diffracted, so that the common-aperture combined beam output is realized;
or, the beam combining mechanism is a double grating structure: the beam combining device comprises a second grating (5) and a third grating (6) which are sequentially arranged along the optical path direction of the semiconductor laser light source, laser beams output by the semiconductor laser light source are incident on the first grating (5) to be diffracted, and the diffracted light beams are incident on the second grating (6) to be diffracted and realize the output of the combined beam with the same aperture.
2. The on-chip-regulation-based semiconductor laser chip spectrum beam combining device according to claim 1, wherein the first grating (4) is a transmissive grating or a reflective grating.
3. The on-chip-regulation-based semiconductor laser chip spectrum beam combining device as claimed in claim 1, wherein the conversion lens (3) is a transmissive or reflective cylindrical lens.
4. The on-chip regulation semiconductor laser chip-based spectrum beam combining device according to any one of claims 1 to 3, wherein the semiconductor laser light source and the first grating (4) are respectively arranged on a front focal plane and a back focal plane of the conversion lens (3); the grating parameters of the first grating (4) are matched with the central wavelength of the semiconductor laser array (1), the interval of the light emitting units and the focal length of the conversion lens (3).
5. The on-chip-regulation-based semiconductor laser chip spectrum beam combining device as claimed in claim 1, wherein the second grating (5) and the third grating (6) are both transmission-type planar gratings or both reflection-type planar gratings.
6. The on-chip-regulation-based semiconductor laser chip spectrum beam combining device according to claim 5, wherein the second grating (5) and the third grating (6) are parallel to each other; the second grating (5) and the third grating (6) are identical in central wavelength and grating constant; the grating spacing and grating parameters of the second grating (5) and the third grating (6) are matched with the central wavelength and the light-emitting unit interval of the semiconductor laser light source.
7. The on-chip-regulation-based semiconductor laser chip spectrum beam combining device as claimed in claim 1, wherein the collimating lens (2) comprises one or more of a fast-axis collimating lens, a slow-axis collimating lens and an aspheric collimating lens, and can collimate the light beam output by the semiconductor laser array (1).
8. The on-chip-regulation-based spectral beam combining device of a semiconductor laser chip as claimed in claim 1, wherein the semiconductor laser array (1) is one of a wide emitting surface semiconductor laser, a narrow ridge semiconductor laser, a tapered semiconductor laser, a MOPA semiconductor laser, a photonic crystal semiconductor laser, and an ultra-large/large optical cavity semiconductor laser.
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Cited By (2)
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| US20210281044A1 (en) * | 2020-01-02 | 2021-09-09 | Institute Of Semiconductors, Chinese Academy Of Sciences | Broadband tuning system and method |
| CN113948970A (en) * | 2021-10-08 | 2022-01-18 | 中国工程物理研究院应用电子学研究所 | Spectrum beam combining device based on rear cavity external cavity spectrum regulation and control |
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