CN116675230A - Electronic grade polycrystalline silicon preparation system for zone melting based on wettability regulation and control method - Google Patents
Electronic grade polycrystalline silicon preparation system for zone melting based on wettability regulation and control method Download PDFInfo
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- CN116675230A CN116675230A CN202310582589.XA CN202310582589A CN116675230A CN 116675230 A CN116675230 A CN 116675230A CN 202310582589 A CN202310582589 A CN 202310582589A CN 116675230 A CN116675230 A CN 116675230A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004857 zone melting Methods 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 40
- 238000009423 ventilation Methods 0.000 claims description 80
- 229920005591 polysilicon Polymers 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 32
- 229910052710 silicon Inorganic materials 0.000 abstract description 24
- 239000010703 silicon Substances 0.000 abstract description 24
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 22
- 229910000077 silane Inorganic materials 0.000 abstract description 22
- 239000001257 hydrogen Substances 0.000 abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 16
- 238000002156 mixing Methods 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 6
- 230000002035 prolonged effect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Abstract
The application relates to the technical field of zone-melting grade polycrystalline silicon, and particularly discloses an electronic grade polycrystalline silicon preparation system for zone-melting based on a wettability regulation and control method. The method can prevent the low-temperature gas from being introduced from the fixed point, so that the local temperature is too low, the silicon rod is cracked, silane and hydrogen are uniformly distributed in the chemical vapor deposition furnace, the growth wettability of the silicon rod can be improved, the silicon rod is uniformly deposited, and the growth quality of the silicon rod is improved.
Description
Technical Field
The application relates to the technical field of zone-melting grade polycrystalline silicon, in particular to an electronic grade polycrystalline silicon preparation system for zone-melting based on a wettability regulation method.
Background
Currently, polysilicon is divided into solar grade polysilicon and electronic grade polysilicon, the solar polysilicon is mainly applied to producing solar panels, the electronic grade polysilicon is mainly applied to preparing key basic materials of integrated circuits, the electronic grade polysilicon is also divided into zone-melting grade polysilicon which is a high-end product in the electronic grade polysilicon, and the zone-melting grade rod-shaped polysilicon is a rod-shaped crystalline silicon material with purity reaching 12N, uniformity and compactness and excellent mechanical properties.
In the prior art, the production technology of the zone-melting grade polycrystalline silicon mainly adopts a trichlorosilane method and a silane method for preparation, the trichlorosilane method for producing the electronic grade polycrystalline silicon has certain advantages, the deposition rate is high, the safety is relatively good, the purity of the polycrystalline silicon can meet the requirements of direct pulling and zone melting, but most of polycrystalline silicon products produced by the trichlorosilane method are solar grade, the quality of the polycrystalline silicon cannot meet the requirements of the electronic grade polycrystalline silicon at present, the silane method is a method for producing the polycrystalline silicon by utilizing silane thermal cracking, the reaction temperature of the method is low, raw material silane is easy to purify, the impurity content can be strictly controlled, the polycrystalline silicon rod produced by the silane method is compact in crystallization, the grain size is less than 0.1 mu m, and the method is the optimal raw material for producing the zone-melting grade monocrystalline silicon; at the same time, the silane cleavage products are non-corrosive, thereby avoiding corrosion to equipment.
However, in the prior art, the polysilicon is electrified to maintain high temperature in the growth process, the surface can reach 1000-1100 ℃, the temperature can reach 1300 ℃ or above at a higher position, and when the mixture of silane and hydrogen is introduced, the internal temperature can be caused to fluctuate, so that the wettability of the silicon rod is poor, and the deposition cannot be uniformly carried out.
Disclosure of Invention
The application aims to provide an electronic grade polysilicon preparation system for zone melting based on a wettability regulation method, which aims to solve the technical problems that when silane and hydrogen mixture are introduced in the prior art, fluctuation exists in internal temperature, so that the wettability of a silicon rod is poor and deposition cannot be uniformly carried out.
In order to achieve the above purpose, the electronic grade polysilicon preparation system for zone melting based on the wettability regulation method comprises a chemical vapor deposition furnace, a bottom plate, ventilation column sections, side wall ventilation columns and ventilation bottom slots, wherein the bottom plate is fixedly connected with the chemical vapor deposition furnace and is positioned in the chemical vapor deposition furnace, the ventilation column sections are multiple, each ventilation column section is respectively arranged in the chemical vapor deposition furnace, the ventilation column sections are sequentially communicated from bottom to top, the ventilation column sections at the bottom penetrate through the bottom plate and the chemical vapor deposition furnace, the number of the side wall ventilation columns is multiple, each side wall ventilation column is respectively fixedly connected with the bottom plate and is respectively positioned in the chemical vapor deposition furnace, each ventilation column penetrates through the bottom plate and the chemical vapor deposition furnace, and the ventilation bottom slots are respectively communicated with the ventilation column sections and the side wall ventilation columns and are positioned at the lower end of the chemical vapor deposition furnace.
Each ventilation column section comprises a column body, a first ring, a second ring and a middle column, wherein the first ring is fixedly connected with the column body and is positioned at the upper end of the column body, the middle columns are fixedly connected with the first ring and are respectively positioned at the upper end of the first ring, and the second ring is fixedly connected with the middle columns and is positioned at the upper ends of the middle columns.
Each ventilation column section further comprises a middle ring and a gas guide ring, wherein the middle ring is fixedly connected with the middle columns and sleeved on the outer surface walls of the middle columns, and the gas guide ring is fixedly connected with the middle ring and sleeved on the outer surface walls of the middle rings.
Each side wall ventilation column comprises a side column and a baffle plate, wherein the side column is fixedly connected with the bottom plate and is positioned inside the chemical weather deposition furnace, the side column penetrates through the bottom plate and the chemical weather deposition furnace and is communicated with the ventilation bottom groove, the side column is provided with a plurality of air holes, the air holes are formed in one side of the side column, the number of the baffle plates is multiple, the baffle plates are respectively fixedly connected with the side column and are respectively positioned on one side of the corresponding air holes.
The electronic grade polysilicon preparation system for zone melting based on the wettability regulation method further comprises a communicating pipe, a preheating bin and an electric heater, wherein the communicating pipe is communicated with the ventilation bottom groove and is positioned on one side of the ventilation bottom groove, the preheating bin is communicated with the communicating pipe and is positioned at one end of the communicating pipe, and the electric heater is arranged in the preheating bin.
The preheating bin comprises a bin body and a spring tube, the bin body is communicated with the communicating tube, the spring tube is arranged in the bin body, two ends of the spring tube are respectively communicated with the bin body and the communicating tube, and the electric heater is arranged in the spring tube.
The electronic grade polysilicon preparation system for zone melting based on the wettability regulation method further comprises a column body and a twisted sheet, wherein the column body is fixedly connected with the ventilation bottom groove and is positioned in the ventilation bottom groove, and the twisted sheet is fixedly connected with the column body and is sleeved in the column body.
The electronic grade polysilicon preparation system for zone melting based on the wettability regulation method has the beneficial effects that: the silane and the hydrogen are blended and mixed and then are introduced into the chemical vapor deposition furnace, the chemical vapor deposition furnace is uniformly introduced with mixed gas through the plurality of ventilation column sections, and simultaneously auxiliary ventilation is carried out on the other side of the silicon rod through the side wall ventilation column, so that the aim of carrying out comparably ventilation on the inside of the chemical vapor deposition furnace is fulfilled, the situation that the local temperature is too low and the silicon rod is cracked due to the fact that the low-temperature gas is introduced from a fixed point position can be prevented, the silane and the hydrogen are uniformly distributed in the inside of the chemical vapor deposition furnace, the growth wettability of the silicon rod can be improved, the silicon rod is uniformly deposited, and the growth quality of the silicon rod is improved.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a sectional view of the internal structure of a first embodiment of the present application.
Fig. 2 is a partial structure enlarged view of the first embodiment of the present application.
Fig. 3 is a sectional view of the internal structure of a second embodiment of the present application.
Fig. 4 is a sectional view showing the internal structure of a third embodiment of the present application.
101-chemical vapor deposition furnace, 102-bottom plate, 103-side wall ventilation column, 104-ventilation bottom tank, 105-column, 106-first ring, 107-second ring, 108-middle column, 109-middle ring, 110-gas guide ring, 111-side column, 112-baffle, 113-air hole, 201-communication pipe, 202-electric heater, 203-bin body, 204-spring pipe, 205-column, 206-twisted piece, 301-gas mixing tank, 302-first gas inlet pipe, 303-second gas inlet pipe, 304-gas outlet pipe, 305-driving motor, 306-fan column, 307-fan piece.
Detailed Description
The first embodiment of the application is as follows:
referring to fig. 1 and 2, fig. 1 is a sectional view showing an internal structure of a first embodiment of the present application, and fig. 2 is an enlarged partial structure of the first embodiment of the present application.
The application provides a wettability control method-based electronic grade polysilicon preparation system for zone melting, which comprises the following steps: the gas-permeable bottom tank comprises a chemical vapor deposition furnace 101, a bottom plate 102, a gas-permeable column section, a side wall gas-permeable column 103 and a gas-permeable bottom tank 104, wherein the gas-permeable column section comprises a column 205105, a first ring 106, a second ring 107, a middle column 108, a middle ring 109 and a gas-permeable ring 110, and the side wall gas-permeable column 103 comprises a side column 111 and a baffle 112.
For this embodiment, the ventilation bottom groove 104 is used for uniformly supplying air to the ventilation column section and the side wall ventilation column 103, so that the chemical vapor deposition furnace 101 can be stably supplied with air, and the air is uniformly distributed, so that the occurrence of cracking caused by overlarge local temperature difference of the silicon rod is prevented.
The bottom plate 102 is fixedly connected with the chemical vapor deposition furnace 101 and is located in the chemical vapor deposition furnace 101, the number of the ventilation column sections is multiple, each ventilation column section is respectively arranged in the chemical vapor deposition furnace 101, the ventilation column sections are sequentially communicated from bottom to top, the ventilation column sections at the bottom penetrate through the bottom plate 102 and the chemical vapor deposition furnace 101, the number of the side wall ventilation column 103 is multiple, each side wall ventilation column 103 is respectively fixedly connected with the bottom plate 102 and is respectively located in the chemical vapor deposition furnace 101, each side wall ventilation column 103 penetrates through the bottom plate 102 and the chemical vapor deposition furnace 101, a ventilation bottom groove 104 is communicated with the ventilation column sections and the ventilation column 103 and is located at the lower end of the chemical vapor deposition furnace 101, the bottom plate 102 is supported by the ventilation column sections 103, the side wall ventilation column 103 is respectively connected with the bottom wall ventilation column 103, and the ventilation column 104 are uniformly mixed with the inside the chemical vapor deposition furnace 101, and the ventilation column 104 is uniformly introduced into the ventilation groove, and the ventilation column 101 is uniformly deposited by the ventilation column 101.
Secondly, the first ring 106 is fixedly connected with the column 205105 and is located at the upper end of the column 205105, the number of the intermediate columns 108 is multiple, the intermediate columns 108 are respectively fixedly connected with the first ring 106 and are respectively located at the upper end of the first ring 106, the second ring 107 is fixedly connected with the intermediate columns 108 and is located at the upper end of the intermediate columns 108, the air-permeable bottom groove 104 is filled with mixed gas, the mixed gas enters the column 205105, the mixed gas enters the chemical vapor deposition furnace 101 through gaps among the first ring 106, the second ring 107 and the intermediate columns 108, and the mixed gas is supplied to each height of the chemical vapor deposition furnace 101, so that silicon rods can be uniformly deposited.
Meanwhile, the middle ring 109 is fixedly connected with the middle posts 108 and sleeved on the outer surface walls of the middle posts 108, the air guide ring 110 is fixedly connected with the middle ring 109 and sleeved on the outer surface wall of the middle ring 109, the air guide ring 110 is supported by the middle ring 109, and the air guide ring 110 is used for blocking the mixed gas, so that the situation that the silicon rod is excessively large in temperature difference and cracks are generated due to the fact that the silicon rod is directly purged by the mixed gas is prevented.
In addition, the side column 111 is fixedly connected with the bottom plate 102 and is located in the chemical vapor deposition furnace 101, the side column 111 penetrates through the bottom plate 102 and the chemical vapor deposition furnace 101 and is communicated with the ventilation bottom groove 104, the side column 111 is provided with a plurality of air holes 113, the air holes 113 are formed in one side of the side column 111, the number of the baffles 112 is multiple, the baffles 112 are respectively fixedly connected with the side column 111 and are respectively located at one side of the corresponding air holes 113, mixed gas is introduced through the side column 111 and is discharged through the air holes 113, and the mixed gas is blocked by the baffles 112 when discharged through the air holes 113, so that the mixed gas is prevented from being directly purged onto a silicon rod.
When the electronic grade polysilicon preparation system for zone melting based on the wettability regulation method is used, the surface of the U-shaped silicon core is cleaned by ultrapure water and is wiped by adopting an organic solvent, after the surface impurities are dried and removed, the silicon core is put on a graphite clamp, nitrogen is introduced into the chemical vapor deposition furnace to replace air in the silicon core, hydrogen is continuously introduced, current is loaded on the silicon core in the reactor, the silicon core is kept for a certain time, an oxide layer on the surface of the silicon core is reduced, the wettability of the silicon core is regulated, the surface of the super-philic silicon is constructed, the current is regulated to control the silicon core to reach a proper reaction temperature, and the mixture of silane and hydrogen is introduced; the bottom plate 102 is supported by the chemical vapor deposition furnace 101, the bottom plate 102 supports the ventilation column joints and the side wall ventilation columns 103, the mixed gas of silane and hydrogen is introduced into the ventilation bottom groove 104, the ventilation bottom groove 104 uniformly supplies air to the ventilation column joints and the side wall ventilation columns 103 to the chemical vapor deposition furnace 101, so that the silicon rods can be uniformly deposited in the chemical vapor deposition furnace 101, the mixed gas is introduced into the ventilation bottom groove 104 and enters the cylinder 205105, the mixed gas is introduced into the chemical vapor deposition furnace 101 through the cylinders 205105, the mixed gas enters the chemical vapor deposition furnace 101 through gaps among the first ring 106, the second ring 107 and the middle cylinder 108, the silicon rods can be uniformly deposited by supplying air to each height of the chemical vapor deposition furnace 101, the air ring 109 is supported by the ring, the mixed gas is directly discharged from the air ring 110, and the air ring 113 is prevented from being blown out of the air ring 110, and the mixed gas is prevented from being directly blown off by the air ring 113.
The second embodiment of the application is as follows:
on the basis of the first embodiment, please refer to fig. 3, wherein fig. 3 is a cross-sectional view of the internal structure of a second embodiment of the present application.
The application provides a wettability control method-based electronic grade polysilicon preparation system for zone melting, which comprises the following steps: still include communicating pipe 201, preheat storehouse, electric heater 202, cylinder 205105 and hank piece 206, preheat the storehouse and include storehouse body 203 and spring pipe 204.
For the embodiment, the mixed gas is introduced into the spring tube 204, and the electric heater 202 preheats the mixed gas inside the spring tube 204, so that the temperature difference of the mixed gas is reduced after the mixed gas enters the chemical vapor deposition furnace 101, and the silicon rod can be stably and uniformly deposited.
The communicating pipe 201 is communicated with the ventilation bottom groove 104 and is located at one side of the ventilation bottom groove 104, the preheating bin is communicated with the communicating pipe 201 and is located at one end of the communicating pipe 201, the electric heater 202 is arranged in the preheating bin, mixed gas is introduced into the heating bin, the electric heater 202 heats the inside of the heating bin, so that the mixed gas is heated, the mixed gas is in a high-temperature state after passing through the preheating bin, and then is introduced into the ventilation bottom groove 104 through the connecting pipe, so that the mixed gas is preheated, and the purpose of reducing the temperature difference is achieved.
Secondly, the bin body 203 is communicated with the communicating pipe 201, the spring pipe 204 is arranged in the bin body 203, two ends of the spring pipe 204 are respectively communicated with the bin body 203 and the communicating pipe 201, the electric heater 202 is arranged in the spring pipe 204, the bin body 203 supports and fixes the spring pipe 204 and the electric heater 202, and the circulation duration of the mixed gas can be prolonged through the spring pipe 204, so that the heating duration of the mixed gas can be prolonged, and the mixed gas can be fully heated to reach a proper temperature.
Meanwhile, the cylinder 205105 is fixedly connected with the ventilation bottom groove 104 and is located in the ventilation bottom groove 104, the twisted piece 206 is fixedly connected with the cylinder 205105 and is sleeved in the cylinder 205105, the cylinder 205105 supports the ventilation bottom groove 104, and the twisted piece 206 can form a spiral pipeline in the ventilation bottom groove 104, so that the circulation time of the mixed gas is prolonged, and the mixed gas smoothly enters the chemical vapor deposition furnace 101 at a constant speed, and provides wettability for growth of silicon rods.
When the electronic grade polysilicon preparation system for zone melting based on the wettability regulation method is used, the mixed gas is introduced into the heating bin, the electric heater 202 heats the inside of the heating bin, so that the mixed gas is heated, the mixed gas is in a high temperature state after passing through the preheating bin, and then is introduced into the ventilation bottom groove 104 through the connecting pipe, so that the mixed gas is preheated, the purpose of reducing the temperature difference is achieved, the bin body 203 supports and fixes the spring pipe 204 and the electric heater 202, the circulation time of the mixed gas can be prolonged through the spring pipe 204, the heating time of the mixed gas can be prolonged, the mixed gas can be fully heated to reach a proper temperature, the cylinder 205105 supports the ventilation bottom groove 104, the spiral pipeline can be formed in the inside of the ventilation bottom groove 104 through the twisted piece 206, the circulation time of the mixed gas can be prolonged, the mixed gas can enter the chemical vapor deposition furnace 101 at a uniform speed, and the growth of the silicon vapor deposition rod is provided.
The third embodiment of the application is as follows:
on the basis of the second embodiment, please refer to fig. 4, wherein fig. 4 is a cross-sectional view of the internal structure of a third embodiment of the present application.
The application provides a wettability control method-based electronic grade polysilicon preparation system for zone melting, which comprises the following steps: the air mixing device further comprises an air mixing mechanism, wherein the air mixing mechanism comprises an air mixing tank 301, a first air inlet pipe 302, a second air inlet pipe 303, an air outlet pipe 304 and a driving assembly, and the driving assembly comprises a driving motor 305, a fan column 306 and a fan 307.
Aiming at the specific embodiment, the gas mixing mechanism is used for uniformly mixing silane and hydrogen, and the uniformly mixed gas can effectively improve the wettability of the growth of the silicon rod, so that the quality of the silicon rod is improved.
The air mixing tank 301 is disposed on one side of the bin 203, two ends of the air mixing tank 301 and the spring tube 204 are respectively connected with two ends of the air exhaust pipe 304, the air mixing tank 301 and the spring tube 204 are located between the air mixing tank 301 and the bin 203, the first air inlet pipe 302 is connected with the air mixing tank 301 and located on the outer surface wall of the air mixing tank 301, the second air inlet pipe 303 is connected with the air mixing tank 301 and located on the outer surface wall of the air mixing tank 301, the number of the driving components is two, the two driving components are respectively disposed in the air mixing tank 301, the first air inlet pipe 302 and the second air inlet pipe 303 are respectively connected with a corresponding silane air pump and a corresponding hydrogen air pump, silane and hydrogen are introduced into the air mixing tank 301 through the first air inlet pipe 302 and the second air inlet pipe 303, and then the mixed air is discharged from the air exhaust pipe 304 and enters the spring tube 204 for preheating.
Secondly, the driving motor 305 is disposed at one end of the gas mixing tank 301, and the output end of the driving motor 305 penetrates through the gas mixing tank 301 and is fixedly connected with the fan column 306, the fan column 306 is located inside the driving motor 305, the number of the fan blades 307 is multiple, the fan blades 307 are respectively fixedly connected with the fan column 306 and are respectively located on the outer surface wall of the fan column 306, the driving motor 305 drives the fan column 306, so as to drive the fan blades 307 to rotate, the rotation of the fan blades 307 drives the silane and hydrogen in the interior to mix, and the two driving motors 305 rotate in opposite directions, so that air convection is formed, and the mixing of the silane and the hydrogen is accelerated.
When the electronic grade polysilicon preparation system for zone melting based on the wettability adjustment method of this embodiment is used, the first air inlet pipe 302 and the second air inlet pipe 303 are respectively connected with a corresponding silane air pump and a corresponding hydrogen air pump, silane and hydrogen are introduced into the gas mixing tank 301 through the first air inlet pipe 302 and the second air inlet pipe 303, after being mixed through the driving component, mixed gas is discharged from the air outlet pipe 304 and enters into the spring pipe 204 for preheating, the driving motor 305 drives the fan column 306, so as to drive the fan 307 to rotate, the rotation of the fan 307 drives the silane and the hydrogen in the interior to mix, and the two driving motors 305 rotate in opposite directions, so that air convection is formed, and the mixing of the silane and the hydrogen is accelerated.
The above disclosure is only a preferred embodiment of the present application, and it should be understood that the scope of the application is not limited thereto, and those skilled in the art will appreciate that all or part of the procedures described above can be performed according to the equivalent changes of the claims, and still fall within the scope of the present application.
Claims (7)
1. A wettability control method-based electronic grade polysilicon preparation system for zone melting is characterized in that,
including chemical weather deposition stove, bottom plate, the post section of ventilating, side wall ventilation post and ventilation kerve, the bottom plate with chemical weather deposition stove fixed connection is located the inside of chemical weather deposition stove, the quantity of the post section of ventilating is a plurality of, every the post section of ventilating set up respectively in the inside of chemical weather deposition stove, and a plurality of the post section of ventilating is by last intercommunication in proper order, the bottom the post section of ventilating runs through the bottom plate with chemical weather deposition stove, the quantity of the side wall ventilation post is a plurality of, every side wall ventilation post respectively with bottom plate fixed connection is located the inside of chemical weather deposition stove, and every side wall ventilation post runs through respectively the bottom plate with chemical weather deposition stove, the ventilation kerve with the post section of ventilating and a plurality of side wall ventilation post intercommunication, and be located the lower extreme of chemical weather deposition stove.
2. The system for preparing electronic grade polysilicon for zone melting based on wettability control method according to claim 1, wherein,
each ventilation column section comprises a column body, a first ring, a second ring and a middle column, wherein the first ring is fixedly connected with the column body and is positioned at the upper end of the column body, the middle columns are fixedly connected with the first ring and are respectively positioned at the upper end of the first ring, and the second ring is fixedly connected with the middle columns and is positioned at the upper ends of the middle columns.
3. The system for preparing electronic grade polysilicon for zone melting based on wettability control method according to claim 2, wherein,
each ventilation column section further comprises a middle ring and a gas guide ring, wherein the middle ring is fixedly connected with the plurality of middle columns and sleeved on the outer surface walls of the plurality of middle columns, and the gas guide ring is fixedly connected with the middle ring and sleeved on the outer surface walls of the middle ring.
4. The manufacturing system of electronic grade polysilicon for zone melting based on wettability control method according to claim 3, wherein,
every side wall ventilation post includes side post and baffle, the side post with bottom plate fixed connection, and be located the inside of chemical vapor deposition stove, just the side post runs through the bottom plate with chemical vapor deposition stove and with the air vent kerve intercommunication, the side post has a plurality of gas pockets, a plurality of the gas pocket all set up in one side of side post, the quantity of baffle is a plurality of, a plurality of baffle respectively with side post fixed connection, and be located respectively corresponding one side of gas pocket.
5. A system for preparing electronic grade polysilicon for zone melting based on wettability method as set forth in claim 4, wherein,
the electronic grade polysilicon preparation system for zone melting based on the wettability regulation method further comprises a communicating pipe, a preheating bin and an electric heater, wherein the communicating pipe is communicated with the ventilation bottom groove and is positioned on one side of the ventilation bottom groove, the preheating bin is communicated with the communicating pipe and is positioned at one end of the communicating pipe, and the electric heater is arranged in the preheating bin.
6. The system for preparing electronic grade polysilicon for zone melting based on wettability control method of claim 5, it is characterized in that the method comprises the steps of,
the preheating bin comprises a bin body and a spring tube, wherein the bin body is communicated with the communicating tube, the spring tube is arranged in the bin body, two ends of the spring tube are respectively communicated with the bin body and the communicating tube, and the electric heater is arranged in the spring tube.
7. The system for preparing electronic grade polysilicon for zone melting based on wettability control method of claim 6, wherein,
the electronic grade polysilicon preparation system for zone melting based on the wettability regulation method further comprises a column body and a twisted sheet, wherein the column body is fixedly connected with the ventilation bottom groove and is positioned in the ventilation bottom groove, and the twisted sheet is fixedly connected with the column body and is sleeved in the column body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310582589.XA CN116675230B (en) | 2023-05-23 | 2023-05-23 | Electronic grade polycrystalline silicon preparation system for zone melting based on wettability regulation and control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310582589.XA CN116675230B (en) | 2023-05-23 | 2023-05-23 | Electronic grade polycrystalline silicon preparation system for zone melting based on wettability regulation and control method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116675230A true CN116675230A (en) | 2023-09-01 |
| CN116675230B CN116675230B (en) | 2024-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310582589.XA Active CN116675230B (en) | 2023-05-23 | 2023-05-23 | Electronic grade polycrystalline silicon preparation system for zone melting based on wettability regulation and control method |
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| CN112429737A (en) * | 2020-11-30 | 2021-03-02 | 内蒙古兴洋科技有限公司 | Device for producing electronic grade polycrystalline silicon by silane method CVD furnace |
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| US4464222A (en) * | 1980-07-28 | 1984-08-07 | Monsanto Company | Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases |
| CN102560425A (en) * | 2012-01-18 | 2012-07-11 | 湖南南方搏云新材料有限责任公司 | Chemical vapor deposition furnace |
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