CN103626185A - Polysilicon production apparatus - Google Patents
Polysilicon production apparatus Download PDFInfo
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- CN103626185A CN103626185A CN201310240967.2A CN201310240967A CN103626185A CN 103626185 A CN103626185 A CN 103626185A CN 201310240967 A CN201310240967 A CN 201310240967A CN 103626185 A CN103626185 A CN 103626185A
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Abstract
The invention discloses a polysilicon production apparatus, comprising a chassis and a bell cover. The chassis and the bell cover are both of a double-layer structure; a cylinder-shaped annular pedestal is arranged in the bell cover; a cavity located between the lower end of the annular pedestal and the chassis is an air inflow cavity, and a cavity located between the annular pedestal and the upper end of the bell cover is an air outflow cavity; the center of the annular pedestal is provided with a cylinder chamber penetrating the top and the bottom of the annular pedestal, and the periphery of the annular pedestal is uniformly provided with silicon rod growing chambers penetrating the top and the bottom of the annular pedestal; an electrode fixing base is arranged on the chassis and is provided with electrodes; silicon cores are fixed on the electrodes; the upper ends of every two adjacent silicon cores are connected with a conductive silicon core; the interior of the cylinder chamber is provided with a cooler and a filter from top to bottom; and the silicon cores in the silicon rod growing chamber are sleeved with cooling jackets. Thus, the polysilicon production apparatus provided by the invention can rapidly adjust a reaction temperature in a reducing furnace, stably control the reaction temperature in an optimal range and reduce side reactions, thereby improving silicon rod purity.
Description
Technical field
The present invention relates to photovoltaic technology field, relate in particular to a kind of polycrystalline silicon producing device.
Background technology
At present, the production major part of polysilicon is all to adopt the method for improvement siemens to produce, improved Siemens is with chlorine and hydrogen synthesising hydrogen, hydrogenchloride and industrial silica fume be synthesizing trichlorosilane at a certain temperature, then trichlorosilane is carried out to separated rectification and purification, trichlorosilane after purification carries out chemical vapor deposition reaction and produces polysilicon in hydrogen reduction furnace, the optimum temperature range of reaction is at 1080 ℃-1150 ℃, if temperature is too high in Reaktionsofen, produce a large amount of silica flours, be suspended in Reaktionsofen, and be deposited on silicon rod surface, generate ambiguity silicon, thereby cause silicon rod purity drop, when temperature is too low, hydrogen reacts with trichlorosilane not exclusively, and the silicon rod speed of growth is slow, and energy consumption is large, also has side reaction simultaneously and produces.Therefore, temperature of reaction while how to control improvement siemens production polysilicon becomes a Focal point and difficult point, common reduction furnace generally comprises chassis now, bell jar and top cover, flange connects each other, chassis, bell jar and end socket are all bilayer structures, internal circulation heat-eliminating medium carries out cooling to Reaktionsofen, thereby the temperature of reaction in control stove, and the high voltage electric being connected with between two silicon cores in stove kilovolt produces amount of heat, for whole reaction provides thermal source, yet the carrying out along with reaction, temperature in stove is during higher than the scope of optimal reaction temperature, can keep temperature equilibrium by accelerating the flow velocity of heat-eliminating medium.Yet because whole reduction furnace integral body is cylindrical structure, internal capacity is very large, reduction furnace inside is along radial direction, to the distance of furnace wall not etc., the heat-eliminating medium heat absorption of just flowing on the furnace wall of reduction furnace, is therefore difficult in the short period of time temperature of reaction is adjusted to optimum temps in each position, the adjusting time is longer, and in the process of this adjusting, on silicon rod, produced ambiguity silicon, thereby cause the purity drop of whole silicon rod.Because present equipment is to large scale development trend, after the excellent number of reaction increases, reduction furnace interior diameter will increase, and the heat of generation will increase, now the cooling performance of furnace wall is obviously poor, and obviously the simple cooling mode in furnace wall cannot meet the production of present polysilicon.
Chinese patent Granted publication number: CN101966991A, on February 9 2011 Granted publication day, discloses polycrystalline silicon producing device, comprising: chassis; Bell jar, is arranged on chassis, forms reactor with chassis; Bell jar is provided with tail gas outlet; Bell jar outer setting chuck, arranges chuck cooling oil entrance and chuck cooling-oil outlet on chuck; Inside reactor arranges internals, and internals comprise middle adapter and jacket pipe, and polycrystalline silicon rod is set in jacket pipe; Middle adapter bottom arranges process gas entrance, reactor cooling oil-in and reactor cooling oil export.Utilize this kind of production polycrystalline silicon device, can effectively reduce the growth of amorphous silicon in reactor, reduce the pollution of device, improve transformation efficiency and the purity of polysilicon.Its weak point is that the temperature of reaction in the polycrystalline silicon producing device middle bell jar of this kind of structure is only cooling by the heat-eliminating medium in chuck, when excess Temperature, heat-eliminating medium needs a longer time temperature of reaction in bell jar just could be reduced to optimum temps, be that the regulate process time is longer, in this process, silicon rod surface has produced more ambiguity silicon, indefinite form silicon can drop on silicon rod surface, pollutes silicon rod.
Summary of the invention
The present invention regulates temperature-time longer in order to overcome the cooling system of polycrystalline silicon producing device of the prior art, in regulate process, silicon rod surface easily generates ambiguity silicon, thereby reduce the deficiency of silicon rod purity, temperature of reaction in a kind of energy quick adjustment reduction furnace is provided, temperature of reaction stable be controlled at optimum range, thereby guarantee the polycrystalline silicon producing device of silicon rod purity.
To achieve these goals, the present invention adopts following technical scheme:
A kind of polycrystalline silicon producing device, comprise chassis and bell jar, described chassis is all bilayer structure, on chassis and bell jar, be respectively equipped with cooling liquid inlet and cooling liquid outlet, in described bell jar, be provided with columned circular base, cavity between circular base lower end and chassis is inlet chamber, cavity between circular base and bell jar upper end is outlet chamber, the outer wall of described circular base and the laminating of the inwall of bell jar, circular base center is provided with the cylindrical cavity that runs through end face and bottom surface, on the circumference of described circular base, be also evenly provided with the silicon rod growth chamber that runs through end face and bottom surface, chassis is provided with electrode permanent seat, electrode permanent seat is provided with electrode, on electrode, be fixed with silicon core, every silicon core all stretches in silicon rod growth chamber, the upper end of two adjacent silicon cores is connected with conductive silicon core, in described cylindrical cavity, be respectively equipped with water cooler from top to bottom, strainer, chassis is provided with inlet pipe and escape pipe, inlet pipe upper end is communicated with inlet chamber, the upper end of escape pipe is connected with strainer.Water cooler is arranged on to the inside of bell jar, and silicon core, silicon rod growth chamber are evenly arranged in the annular region between water cooler and bell jar inwall, temperature of reaction in silicon rod growth chamber in heat-eliminating medium co-controlling bell jar in internal cooler and bell jar interlayer, in the time of excess Temperature, can fast temperature be reduced to best reaction range, reduce to greatest extent the generation of ambiguity silicon, thereby guarantee the purity of silicon rod.
As preferably, on the silicon core in described silicon rod growth chamber, be arranged with cooling jacket, described cooling jacket is interlayer cover, and the lower end of described cooling jacket is provided with inlet opening, and the upper end of cooling jacket is provided with fluid hole.In each independent silicon rod growth chamber, also there is independent cooling jacket, the inlet opening of cooling jacket lower end is connected with the coolant inlet pipe of extraneous cooling system, cooling fluid enters in the interlayer of cooling jacket from extraneous cooling system, the conversion zone of silicon core periphery is carried out to temperature accurately to be controlled, can be adjusted to fast and accurately best temperature of reaction, guarantee the purity of silicon rod.
As preferably, the lower end of circular base is provided with annular skimmer, annular skimmer is provided with cooling liquid inlet, the lower end inlet opening of each cooling jacket is communicated with annular skimmer, the outer side wall of circular base is provided with annular recesses, between described annular recesses and bell jar inwall, form the annular chamber of sealing, the fluid hole of the upper end of each cooling jacket is communicated with annular chamber by pipe connecting, and the lower end of described annular chamber is provided with cooling liquid outlet.Because the quantity of cooling jacket is more, and the temperature of reaction at each silicon core place wants consistent, therefore by skimmer, be a plurality of cooling jacket feed flows, guarantee cooling fluid even, stable entering in different cooling jackets simultaneously, thereby make the cooling performance high conformity of cooling jacket, temperature of reaction is convenient to control, regulate, the cooling fluid absorbing after heat flows in sealing annular chamber from the fluid hole of cooling jacket upper end, then from the cooling liquid outlet of annular chamber lower end, enters in the cooling fluid output tube of extraneous cooling system.
As preferably, water cooler comprises vertical main cooling tube and auxiliary cooling pipe, the lower end of main cooling tube is provided with cooling liquid inlet, the periphery of described main cooling tube is provided with several spiral pipes vertically, the inner of described spiral pipe is connected perforation with main cooling tube respectively, the outer end of spiral pipe is connected respectively perforation with auxiliary cooling pipe, the upper end of described auxiliary cooling pipe is provided with cooling liquid outlet.Cooling liquid inlet on main cooling tube is connected with coolant inlet pipe in extraneous cooling system, cooling fluid enters in main cooling tube, then pass through main cooling tube separately to each spiral pipe separatory, make each spiral pipe can absorb to greatest extent heat, and the contact area of spiral pipe and tail gas is large, cooling performance might as well, cooling fluid enters in auxiliary cooling pipe from the outer end of each spiral pipe, then from the cooling liquid outlet of auxiliary cooling pipe upper end, flows in the cooling fluid output tube of extraneous cooling system.
As preferably, the center on chassis is provided with support cover, and in a tubular form, the lower end of support cover is fixedly connected with chassis described support cover, and the upper end of support cover is connected with the lower end flanges of strainer, and the side of described support cover is provided with some ventilating pits.Support cover plays the effect of support to strainer, silicon source property gas can pass through in the ventilating pit of support cover, and ventilating pit can further make silicon source property gas mix, and is conducive to fully carrying out of reaction; When needs cleaning and filtering, the joint bolt that only need to pull down on flange can pull down cleaning whole strainer, very convenient.
As preferably, described inlet pipe and escape pipe are concentric tube, escape pipe is located at inlet pipe inside, the lower end of escape pipe is stretched out outside inlet pipe and is branched off into muffler and vapor pipe, the outer end of described vapor pipe connects cold hydrogenation apparatus, the outer end of described muffler is communicated with inlet pipe, and the pipeline of described muffler is provided with air pump.Most of tail gas is cooling through supercooler, after the filtration of strainer, in escape pipe, get rid of again, tail gas after processing also can carry out recycle by residual a lot of silicon source property gas in recycling tail gas enter inlet pipe in muffler under the effect of air pump, thereby improves the utilization ratio of raw material.
As preferably, bell jar upper end open, the upper end of bell jar is provided with end socket, and between described end socket and bell jar, flange connects, and end socket is also bilayer structure, is also provided with cooling liquid inlet and cooling liquid outlet on end socket.This kind of structure middle bell jar upper end open, after silicon rod is grown well, only need to open end socket can take out silicon rod by loop wheel machine, and do not need all to write heavy bell jar at every turn, whole process of getting silicon rod is more laborsaving, convenient, can also remove the integrated danger of colliding silicon rod in tearing stove process open of conventional bell jar from.
As preferably, each cooling liquid inlet and cooling liquid outlet arrange manually-operated gate.In case of emergency can control flowing of cooling fluid by manually-operated gate.
As preferably, each cooling liquid inlet place is connected with coolant inlet pipe by independent pipe, and each pipe is provided with autocontrol valve.All autocontrol valves are connected with master controller, and in process of production, according to the variation of sample temperature, each autocontrol valve can pass through controller flow automatic regulation to silicon rod.
Therefore, the present invention has the temperature of reaction in quick adjustment reduction furnace, temperature of reaction stable be controlled at optimum range, thereby improve silicon rod purity, reduce the property gas waste of silicon source, reduce the beneficial effect that silica flour produces.
Meanwhile, the present invention also has circulation of tail gas utilization, thereby reduces wastage of material, improves the beneficial effect of silicon rod productivity.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the present invention.
Fig. 2 is vertical view of the present invention.
In figure: main cooling tube 41 auxiliary cooling pipe 42 muffler 61 vapor pipes 62 of the chassis 1 bell jar 2 cooling liquid inlet 3 cooling liquid outlet 4 circular base 5 inlet chamber 6 outlet chamber 7 cylindrical cavity 8 silicon rod growth chamber 9 electrode permanent seat 10 electrode 11 silicon core 12 conductive silicon core 13 water cooler 14 strainer 15 inlet pipe 16 escape pipe annular skimmer 19 annular chamber 20 support cover 21 ventilating pit 22 air pump 24 end socket 25 manually-operated gate 26 coolant inlet pipe 27 autocontrol valve 28 cooling fluid output tube 29 of 17 cooling jacket 18.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described:
A kind of polycrystalline silicon producing device as depicted in figs. 1 and 2, comprise chassis 1 and bell jar 2, bell jar 2 upper end open, the upper end of bell jar 2 is provided with end socket 25, between end socket 25 and bell jar 2, flange connects, chassis 1, bell jar 2, end socket 25 is all bilayer structure, between bilayer, be provided with the gap for coolant flow, chassis, bell jar, on end socket, be all respectively equipped with the cooling liquid inlet 3 and the cooling liquid outlet 4 that are communicated with coolant flow gap, each cooling liquid inlet 3 and cooling liquid outlet 4 arrange manually-operated gate 26, each cooling liquid inlet 3 place is connected with coolant inlet pipe 27 by independent pipe, each cooling liquid outlet 4 place is also connected with cooling fluid output tube 29 by pipe, each pipe is provided with autocontrol valve 28, each autocontrol valve 28 is connected with controller, by the independent openings of sizes adjust flux of automatically controlling each autocontrol valve 28 of controller, cooling fluid enters respectively chassis from coolant inlet pipe 27, bell jar, whole reduction furnace is carried out to integral body in end socket cooling, in bell jar 2, be provided with columned circular base 5, cavity between circular base 5 lower ends and chassis 1 is inlet chamber 6, cavity between the end socket 25 of circular base 5 and bell jar upper end is outlet chamber 7, the inwall laminating of the outer wall of circular base 5 and bell jar 2, circular base 5 centers are provided with the cylindrical cavity 8 that runs through end face and bottom surface, in cylindrical cavity 8, be respectively equipped with water cooler 14 from top to bottom, strainer 15, on the circumference of circular base 5, be also evenly provided with the silicon rod growth chamber 9 that runs through end face and bottom surface, chassis 1 inner bottom part is provided with annular electrode permanent seat 10, electrode permanent seat 10 is provided with electrode 11, on electrode 11, be fixed with silicon core 12, the upper end of every silicon core 12 is all stretched in silicon rod growth chamber 9 and is stretched out from the upper end of silicon rod growth chamber, the upper end of two adjacent silicon cores 12 is connected with conductive silicon core 13, two silicon cores and conductive silicon core form a power circuit, each silicon rod growth chamber is arranged in the annular region between water cooler and bell jar wall, each silicon rod growth chamber is to the close together of bell jar inner side-wall and nearer, thereby be convenient to cooling fluid in bell jar wall to the most effective cooling effect of silicon rod growth chamber (being reduction reaction generation area).
Chassis is provided with inlet pipe 16 and escape pipe 17, inlet pipe 17 upper ends are communicated with inlet chamber 6, the upper end of escape pipe 17 is connected with strainer 15, the center on chassis 1 is provided with support cover 21, support cover 21 in a tubular form, the lower end of support cover 21 is fixedly connected with chassis, the lower end of escape pipe 17 is passed and passes chassis from the axis of support cover, the upper end of support cover 21 is connected with the lower end flanges of strainer 15, the lower end of the upper end of support cover 21 and strainer 15 also can connect with welding, in the present embodiment, the upper end of support cover 21 is connected with the lower end flanges of strainer 15, the side of support cover 21 is provided with some ventilating pits 22, inlet pipe 16 and escape pipe 17 are concentric tube, escape pipe 17 is located at inlet pipe 16 inside, the lower end of escape pipe 17 is stretched out outside inlet pipe 16 and is branched off into muffler 61 and vapor pipe 62, the outer end of vapor pipe 62 connects exhaust gas treating device, the outer end of muffler 61 is communicated with inlet pipe 16, the pipeline of muffler 61 is provided with air pump 24, silicon source property gas (silane or a chlorine hydrogen silicon, dichloro-dihydro silicon, trichlorosilane, the gas mixture of silicon tetrachloride and hydrogen) from inlet pipe 16, enter in inlet chamber 6, then from the ventilating pit of support cover 21 sides, pass through, ventilating pit can further make silicon source property gas mix, be convenient to sufficient reacting, completely, last silicon source property gas enters in silicon rod growth chamber, silicon core now, in the power circuit that conductive silicon core all becomes, be connected with high voltage electric and provide temperature environment for reduction reaction, being reduced out polysilicon accumulates on silicon core and conductive silicon core, reacted tail gas from discharge the upper end of silicon rod growth chamber through outlet chamber, then arriving water cooler carries out cooling, the low tail gas of temperature is due in stove and the pressure reduction reason of exhaust pipe, decline and from escape pipe, discharge after the filtration of strainer, strainer can filter out the ambiguity silica flour in tail gas, in the tail gas of discharging because contain a certain amount of silicon source property gas, therefore a part of tail gas is used by the air pump suction inlet pipe internal recycle on muffler, a part enters in exhaust gas treating device from vapor pipe, thereby keep the stable of pressure in whole gas system.
Silicon core in silicon rod growth chamber 9 is arranged with cooling jacket 18 outward, cooling jacket is interlayer cover, the lower end of cooling jacket 18 is provided with inlet opening, the upper end of cooling jacket 18 is provided with fluid hole, the lower end of circular base 5 is provided with annular skimmer 19, the lower end inlet opening of each cooling jacket is communicated with annular skimmer 19, the outer side wall of circular base 5 is provided with annular recesses, between annular recesses and bell jar inwall, form the annular chamber 20 of sealing, the fluid hole of the upper end of each cooling jacket is communicated with annular chamber by pipe connecting, the lower end of annular chamber is provided with cooling liquid outlet, annular skimmer 19 is connected with extraneous coolant inlet pipe, the lower end of annular chamber is provided with cooling liquid outlet and is connected with cooling fluid output tube, cooling fluid enters in the interlayer of cooling jacket from extraneous coolant inlet pipe, coordinate the adjusting of automatic regulating valve to carry out temperature control accurately to the conversion zone of silicon core periphery, can be adjusted to fast and accurately best temperature of reaction, guarantee the purity of silicon rod, and the time that is adjusted to optimal reaction temperature state from superheat state is very short, thereby avoid to greatest extent the generation of side reaction, reduce to greatest extent the generation of ambiguity silicon, thereby effectively improve the purity of silicon rod, as shown in Figure 2, water cooler 14 comprises vertical main cooling tube 41 and auxiliary cooling pipe 42, the lower end of main cooling tube is provided with cooling liquid inlet, the periphery of main cooling tube is provided with several spiral pipes 43 vertically, the inner of spiral pipe 43 is connected perforation with main cooling tube respectively, the outer end of spiral pipe 43 is connected respectively perforation with auxiliary cooling pipe, the upper end of described auxiliary cooling pipe is provided with cooling liquid outlet, the cooling liquid inlet of main cooling tube lower end is connected with coolant inlet pipe, the cooling liquid outlet of auxiliary cooling pipe upper end is connected with cooling fluid output tube, cooling fluid enters in main cooling tube, then pass through main cooling tube separately to each spiral pipe separatory, make each spiral pipe can absorb to greatest extent heat, and the contact area of spiral pipe and tail gas is large, cooling performance might as well, cooling fluid enters in auxiliary cooling pipe from the outer end of each spiral pipe, then from the cooling liquid outlet of auxiliary cooling pipe upper end, flow in the cooling fluid output tube of extraneous cooling system.Therefore, the present invention has the temperature of reaction in quick adjustment reduction furnace, temperature of reaction stable be controlled at optimum range, reduce the generation of side reaction, reduce to greatest extent the generation of ambiguity silicon, thereby effectively improve the beneficial effect of silicon rod purity; Meanwhile, the present invention can, by the control of temperature in stove, reduce after the tail gas that contains a small amount of silicon source property gas leaves cooling jacket and continue reaction, thereby reduce the loss of silicon source property gas; In addition, the present invention also has circulation of tail gas utilization, thereby reduces wastage of material, further reduces the beneficial effect of silicon source property air-loss.
Claims (9)
1. a polycrystalline silicon producing device, comprise chassis (1) and bell jar (2), described chassis and bell jar are all bilayer structure, on chassis and bell jar, be respectively equipped with cooling liquid inlet (3) and cooling liquid outlet (4), it is characterized in that, in described bell jar, be provided with columned circular base (5), cavity between circular base lower end and chassis is inlet chamber (6), cavity between circular base and bell jar upper end is outlet chamber (7), the outer wall of described circular base and the laminating of the inwall of bell jar, circular base center is provided with the cylindrical cavity (8) that runs through end face and bottom surface, on the circumference of described circular base, be also evenly provided with the silicon rod growth chamber (9) that runs through end face and bottom surface, chassis is provided with electrode permanent seat (10), electrode permanent seat is provided with electrode (11), on electrode, be fixed with silicon core (12), every silicon core all stretches in silicon rod growth chamber, the upper end of two adjacent silicon cores is connected with conductive silicon core (13), in described cylindrical cavity, be respectively equipped with water cooler (14) from top to bottom, strainer (15), chassis is provided with inlet pipe (16) and escape pipe (17), inlet pipe upper end is communicated with inlet chamber, the upper end of escape pipe is connected with strainer.
2. a kind of polycrystalline silicon producing device according to claim 1, it is characterized in that, on the silicon core in described silicon rod growth chamber (9), be arranged with cooling jacket (18), described cooling jacket is interlayer cover, the lower end of described cooling jacket is provided with inlet opening, and the upper end of cooling jacket is provided with fluid hole.
3. a kind of polycrystalline silicon producing device according to claim 2, it is characterized in that, the lower end of circular base (5) is provided with annular skimmer (19), annular skimmer is provided with cooling liquid inlet, the lower end inlet opening of each cooling jacket is communicated with annular skimmer (19), the outer side wall of circular base (5) is provided with annular recesses, between described annular recesses and bell jar inwall, form the annular chamber (20) of sealing, the fluid hole of the upper end of each cooling jacket is communicated with annular chamber by pipe connecting, and the lower end of described annular chamber is provided with cooling liquid outlet.
4. according to a kind of polycrystalline silicon producing device described in claim 1 or 2 or 3, it is characterized in that, water cooler (14) comprises vertical main cooling tube (41) and auxiliary cooling pipe (42), the lower end of main cooling tube is provided with cooling liquid inlet, the periphery of described main cooling tube is provided with several spiral pipes (43) vertically, the inner of described spiral pipe is connected perforation with main cooling tube respectively, the outer end of spiral pipe is connected respectively perforation with auxiliary cooling pipe, the upper end of described auxiliary cooling pipe is provided with cooling liquid outlet.
5. a kind of polycrystalline silicon producing device according to claim 4, it is characterized in that, the center on chassis is provided with support cover (21), described support cover in a tubular form, the lower end of support cover is fixedly connected with chassis, the upper end of support cover is connected with the lower end flanges of strainer, and the side of described support cover is provided with some ventilating pits (22).
6. a kind of polycrystalline silicon producing device according to claim 1, it is characterized in that, described inlet pipe (16) and escape pipe (17) are concentric tube, escape pipe is located at inlet pipe inside, the lower end of escape pipe is stretched out outside inlet pipe and is branched off into muffler (61) and vapor pipe (62), the outer end of described vapor pipe is connected with exhaust gas treating device, and the outer end of described muffler is communicated with inlet pipe, and the pipeline of described muffler is provided with air pump (24).
7. according to a kind of polycrystalline silicon producing device described in claim 1 or 6, it is characterized in that bell jar (2) upper end open, the upper end of bell jar is provided with end socket (25), between described end socket and bell jar, flange connects, and end socket is also bilayer structure, is also provided with cooling liquid inlet and cooling liquid outlet on end socket.
8. a kind of polycrystalline silicon producing device according to claim 7, is characterized in that, each cooling liquid inlet (3) and cooling liquid outlet (4) arrange manually-operated gate (26).
9. a kind of polycrystalline silicon producing device according to claim 8, is characterized in that, each cooling liquid inlet place is connected with coolant inlet pipe (27) by independent pipe, and each pipe is provided with autocontrol valve (28).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310240967.2A CN103626185B (en) | 2013-06-18 | 2013-06-18 | Polysilicon production apparatus |
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| CN201310240967.2A CN103626185B (en) | 2013-06-18 | 2013-06-18 | Polysilicon production apparatus |
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| CN103626185B CN103626185B (en) | 2015-05-13 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104016349A (en) * | 2014-05-29 | 2014-09-03 | 姚迅 | Production apparatus and production method for polysilicon rod |
| CN108137330A (en) * | 2015-10-14 | 2018-06-08 | 瓦克化学股份公司 | For the reactor of deposit polycrystalline silicon |
| CN109682221A (en) * | 2018-12-18 | 2019-04-26 | 中国恩菲工程技术有限公司 | Heating plant and heat-exchange system |
| CN109882870A (en) * | 2017-12-06 | 2019-06-14 | 江苏赛尔亚环保科技有限公司 | A kind of incinerator |
| CN112429737A (en) * | 2020-11-30 | 2021-03-02 | 内蒙古兴洋科技有限公司 | Device for producing electronic grade polycrystalline silicon by silane method CVD furnace |
| CN116675230A (en) * | 2023-05-23 | 2023-09-01 | 河南硅烷科技发展股份有限公司 | Electronic grade polycrystalline silicon preparation system for zone melting based on wettability regulation and control method |
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| CN201648567U (en) * | 2010-03-11 | 2010-11-24 | 化学工业第二设计院宁波工程有限公司 | Polysilicon decomposing furnace |
| CN101966991A (en) * | 2010-10-20 | 2011-02-09 | 上海森松压力容器有限公司 | Polycrystalline silicon producing device |
| CN203319709U (en) * | 2013-06-18 | 2013-12-04 | 浙江精功科技股份有限公司 | Polycrystalline silicon production device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201648567U (en) * | 2010-03-11 | 2010-11-24 | 化学工业第二设计院宁波工程有限公司 | Polysilicon decomposing furnace |
| CN101966991A (en) * | 2010-10-20 | 2011-02-09 | 上海森松压力容器有限公司 | Polycrystalline silicon producing device |
| CN203319709U (en) * | 2013-06-18 | 2013-12-04 | 浙江精功科技股份有限公司 | Polycrystalline silicon production device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104016349A (en) * | 2014-05-29 | 2014-09-03 | 姚迅 | Production apparatus and production method for polysilicon rod |
| CN104016349B (en) * | 2014-05-29 | 2015-09-30 | 姚迅 | A kind of production equipment of polycrystalline silicon rod and method thereof |
| CN108137330A (en) * | 2015-10-14 | 2018-06-08 | 瓦克化学股份公司 | For the reactor of deposit polycrystalline silicon |
| CN108137330B (en) * | 2015-10-14 | 2021-08-03 | 瓦克化学股份公司 | Reactor for depositing polycrystalline silicon |
| CN109882870A (en) * | 2017-12-06 | 2019-06-14 | 江苏赛尔亚环保科技有限公司 | A kind of incinerator |
| CN109682221A (en) * | 2018-12-18 | 2019-04-26 | 中国恩菲工程技术有限公司 | Heating plant and heat-exchange system |
| CN112429737A (en) * | 2020-11-30 | 2021-03-02 | 内蒙古兴洋科技有限公司 | Device for producing electronic grade polycrystalline silicon by silane method CVD furnace |
| CN116675230A (en) * | 2023-05-23 | 2023-09-01 | 河南硅烷科技发展股份有限公司 | Electronic grade polycrystalline silicon preparation system for zone melting based on wettability regulation and control method |
| CN116675230B (en) * | 2023-05-23 | 2024-01-12 | 河南硅烷科技发展股份有限公司 | Electronic grade polycrystalline silicon preparation system for zone melting based on wettability regulation and control method |
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| CN103626185B (en) | 2015-05-13 |
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