CN116647209B - Novel millimeter wave digital attenuator - Google Patents
Novel millimeter wave digital attenuator Download PDFInfo
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- H—ELECTRICITY
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- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
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Abstract
The invention discloses a novel millimeter wave digital attenuator, which comprises a lookup table module, a singlechip, a high-precision digital-to-analog converter, a first branch, a second branch and a variable gain attenuator, wherein the lookup table module is used for receiving the millimeter wave digital attenuator; a first branch and a second branch are arranged between the high-precision digital-to-analog converter and the variable gain attenuator in parallel; the first branch and the second branch respectively comprise a low-pass filter and a buffer. The lookup table module is used for storing the bias voltage value required by the variable gain attenuator and the corresponding step attenuation; the singlechip is used for controlling the high-precision digital-to-analog converter to output the bias voltage required by the variable gain attenuator; the low-pass filter is used for filtering the high-frequency pulsation interference signals, and the buffer is used for enabling the output signals of the high-precision digital-to-analog converter to be delayed so as to eliminate the influence of load traction on the circuit. The invention effectively solves the problems of insufficient attenuation precision and insufficient dynamic range of the attenuator in millimeter wave frequency band application, and has better practicability.
Description
Technical Field
The invention belongs to the technical field of millimeter wave frequency band attenuators, and particularly relates to a novel millimeter wave digital attenuator.
Background
Currently, the application of millimeter wave attenuators in radio frequency communication systems is more and more, especially in phased array radar systems, the attenuators are widely used for adjusting or compensating gains among different channels, so that higher requirements are also put on the precision, the phase change range and the stability of the attenuators. However, the conventional radio frequency attenuator structure has the problems of reduced precision, overlarge phase jump and narrow attenuation dynamic range when the conventional radio frequency attenuator structure is applied to millimeter wave frequency bands. In addition, the traditional attenuator single-end input signal has weak anti-interference capability and large noise, and more noise can be introduced during high-frequency application, so that the actual effective signal is deteriorated. Secondly, as an important component in the phased array system, the phase change of the attenuator circuit in different attenuation states has an important influence on the whole system, and stable phase change can avoid tracking errors and complex phase calibration, so that the load of the phase shifter in the phased array system is reduced.
Disclosure of Invention
The invention aims to provide a novel millimeter wave digital attenuator and aims to solve the problems.
The invention can solve the problems of insufficient attenuation precision and insufficient dynamic range of the attenuator in millimeter wave frequency band application. The invention realizes a circuit structure based on the high-precision digital-to-analog converter and the X-type variable gain attenuator, and improves the precision and the phase of the attenuator. The transformer is adopted in the X-type variable gain attenuator to realize the mutual conversion from single-ended signals to differential signals, so that the signal noise used in the actual work is smaller, the signal is more stable, and each attenuation state of the attenuator can be more accurate.
The invention is realized mainly by the following technical scheme:
a novel millimeter wave digital attenuator comprises a lookup table module, a singlechip, a high-precision digital-to-analog converter, a first branch, a second branch and a variable gain attenuator which are sequentially connected from front to back; a first branch and a second branch are arranged between the high-precision digital-to-analog converter and the variable gain attenuator in parallel; the first branch and the second branch respectively comprise a low-pass filter and a buffer which are sequentially arranged from front to back;
the lookup table module is used for storing the bias voltage value required by the variable gain attenuator and the corresponding step attenuation; the singlechip is used for controlling the high-precision digital-to-analog converter to output the bias voltage required by the variable gain attenuator; the high-precision digital-to-analog converter is used for providing accurate voltage control for the variable gain attenuator; the low-pass filter is used for filtering the high-frequency pulsation interference signals, and the buffer is used for enabling the output signals of the high-precision digital-to-analog converter to be delayed so as to eliminate the influence of load traction on the circuit.
In order to better realize the invention, the variable gain attenuator is of an X-type attenuator structure and comprises two FET tubes which are cross-coupled in a differential signal path and two FET tubes which are connected in parallel in a phase signal path; the input end of the FET tube is provided with a transformer for realizing the conversion from a single-ended signal to a differential signal, and the output end of the FET tube is provided with a transformer for realizing the output voltage after the conversion from the differential signal to the single-ended signal.
In order to better realize the invention, the variable gain attenuator further comprises MOS tubes M1-M4, wherein the MOS tube M2 and the MOS tube M3 are in cross coupling in a differential signal path, and the MOS tube M1 and the MOS tube M4 are arranged in parallel in a phase signal path; the gates of the MOS tube M1 and the MOS tube M4 are connected in series with a resistor R1 and then connected with a bias voltage V1, and the gates of the MOS tube M2 and the MOS tube M3 are connected in series with a resistor R2 and then connected with a bias voltage V2; the input end of the MOS tube M1-M4 is connected with a transformer T1 formed by two inductance coils for realizing the conversion from a single-ended signal to a differential signal, and the output end of the MOS tube M1-M4 is connected with a transformer T2 formed by two inductance coils for realizing the output voltage after the conversion from the differential signal to the single-ended signal.
In order to better realize the invention, the invention further comprises a voltage-controlled attenuator, wherein the voltage-controlled attenuator is of a T-shaped structure, a plurality of groups of MOS (metal oxide semiconductor) tubes are arranged on serial branches of the voltage-controlled attenuator, a plurality of parallel branches are correspondingly arranged on the voltage-controlled attenuator, and the MOS tubes are arranged on the parallel branches; two voltage-controlled attenuators are arranged between the variable gain attenuator and the transformer T1, and the variable gain attenuator is connected with a parallel branch of the voltage-controlled attenuators. The balun structure may be adapted.
In order to better realize the invention, further, the gate voltage of the MOS transistor is stepped to 0.2V. The control voltage step increase is not limited to 0.2V. Preferably, the voltage step of the grid level of the MOS tube is 0.2V.
In order to better implement the present invention, further, the high-precision digital-to-analog converter is a 16-bit digital-to-analog converter chip with multiple output voltage ranges, and the 16-bit digital-to-analog converter chip includes four paths of digital-to-analog conversion interfaces.
To better implement the invention, the buffer further comprises a number of cascaded inverters.
In order to better implement the invention, further, the buffer is a unity gain voltage buffer.
In order to better realize the invention, further, the attenuation step increase of the millimeter wave digital attenuator is less than or equal to 0.5dB. Preferably, the attenuation of the attenuator is stepped to any one of 0.2dB,0.25dB and 0.3 dB.
The beneficial effects of the invention are as follows:
the invention relates to a millimeter wave digital attenuator structure based on a high-precision digital-to-analog converter and a variable gain attenuator. The number of transistors in the differential structure in the core circuit of the variable gain attenuator can be adjusted according to actual application scenes. The number of inverters inside the buffer is adjustable. The bias voltage value and the corresponding step attenuation of the variable gain attenuator are stored in the lookup table; the single chip microcomputer and the high-precision digital-to-analog converter can realize direct conversion from a target attenuation value to a bias voltage, and excessive complex application and repeated calculation are avoided.
The method is used for accurately measuring the precision and the phase error of the millimeter wave attenuator; the invention effectively reduces the excessively complex calculation and device in the millimeter wave attenuator realization process through the arrangement of the high-precision digital-analog converter, the lookup table module, the low-pass filter and the buffer. The X-type attenuator structure of the invention converts the differential signal and the single-ended signal with each other through the transformer, thereby reducing noise, improving the stability of the system and needing no consumption of direct current power.
Drawings
FIG. 1 is a schematic diagram of an attenuator of the present invention;
FIG. 2 is a schematic diagram of the connection of an RC low pass filter to a buffer;
FIG. 3 is a circuit diagram of a variable gain attenuator;
fig. 4 is a schematic diagram of an equivalent small signal model of a variable gain attenuator.
FIG. 5 is a schematic diagram of a connection structure of a voltage controlled attenuator and a variable gain attenuator;
fig. 6 is a circuit diagram of a voltage controlled attenuator.
Detailed Description
Example 1:
a novel millimeter wave digital attenuator is shown in figure 1, and comprises a lookup table module, a singlechip, a high-precision digital-to-analog converter, a first branch, a second branch and a variable gain attenuator which are sequentially connected from front to back; a first branch and a second branch are arranged between the high-precision digital-to-analog converter and the variable gain attenuator in parallel; the first branch and the second branch respectively comprise a low-pass filter and a buffer which are sequentially arranged from front to back. Preferably, the variable gain attenuator is an X-shaped attenuator structure.
Preferably, as shown in fig. 3, the variable gain attenuator includes MOS transistors M1-M4, where the MOS transistor M2 and the MOS transistor M3 are cross-coupled in a differential signal path, and the MOS transistor M1 and the MOS transistor M4 are parallel-connected and arranged in a phase signal path; the gates of the MOS tube M1 and the MOS tube M4 are connected in series with a large resistor R1 and then connected with a bias voltage V1, and the gates of the MOS tube M2 and the MOS tube M3 are connected in series with a large resistor R2 and then connected with a bias voltage V2; the input end of the MOS tube M1-M4 is connected with a transformer T1 formed by two inductance coils for realizing the conversion from a single-ended signal to a differential signal, and the output end of the MOS tube M1-M4 is connected with a transformer T2 formed by two inductance coils for realizing the output voltage after the conversion from the differential signal to the single-ended signal.
Working principle: as shown in fig. 3, the gate of each MOS transistor is connected to a large resistor with the same resistance value, which can be used to protect the MOS transistor in a high power state, and the control voltages V1 and V2 are in the same amplitude and opposite phases, and are sequentially increased from 0.2V to 2V in steps. When the voltage V1 is at a low level, the voltage V2 is at a high level, at the moment, the MOS transistors M2 and M3 controlled by the voltage V1 are turned off, the MOS transistors M1 and M4 are turned on, and as the voltage V1 is increased from 0V to 2V, the MOS transistors M2 and M3 are gradually turned on from an off state, and the on resistance corresponding to the MOS transistors M2 and M3 is changed in the process, so that different voltages correspond to different on resistances and further control to generate different attenuation amounts, and the function of variable gain is realized. Conversely, the MOS transistors M2 and M3 are turned from on to off, and the MOS transistors M1 and M4 are gradually turned from off to on.
The lookup table module is used for storing the bias voltage value required by the variable gain attenuator and the corresponding step attenuation; the singlechip is used for controlling the high-precision digital-to-analog converter to output the bias voltage required by the variable gain attenuator; the high precision digital-to-analog converter is used for providing accurate voltage control for the variable gain attenuator. Preferably, the look-up table stores the bias voltage value of the variable gain attenuator and the corresponding 0.2dB step attenuation. The singlechip and the high-precision digital-to-analog converter can realize direct conversion from a target attenuation value to bias voltage, and effectively avoid excessive and complex application and repeated calculation.
As shown in fig. 2, the low-pass filter is used for filtering the dither interference signal, and the buffer is used for delaying the output signal of the high-precision digital-to-analog converter to eliminate the influence of load traction on the circuit
Example 2:
a novel millimeter wave digital attenuator is shown in figure 1, and comprises a lookup table module, a singlechip, a high-precision digital-to-analog converter, a low-pass filter, a buffer and a variable gain attenuator.
The singlechip equipment controls the high-precision digital-to-analog converter through the SPI (serial peripheral interface) to output the bias voltage required by the variable gain attenuator, so that high-precision attenuation accurate to 0.2dB is generated in the millimeter wave frequency band, and a complex logic interface in the traditional conversion process is avoided. The invention can realize the attenuation of 0.25dB and 0.3dB step by selecting a proper precision digital-to-analog converter chip, and the precision of the millimeter wave attenuator can be further improved by increasing the step with smaller attenuation.
The high-precision digital-to-analog converter provides accurate voltage control for a variable gain attenuator. Preferably, the invention selects a 16-bit digital-to-analog converter chip to realize a circuit, and the chip comprises four paths of digital-to-analog conversion interfaces, and also has multiple output voltage ranges. For example: 2.5V, 5V, 2.5V voltage range is selected. If an exact attenuation of 0.2dB is desired, the bias voltage needs to be 1mV.
Preferably, the lookup table module is configured to provide a desired bias voltage for the variable gain amplifier, similar to a stored switching circuit, and stores the bias voltage value of the variable gain attenuator and the corresponding 0.2dB step attenuation in the lookup table. Therefore, the singlechip and the high-precision digital-to-analog converter can realize direct conversion from the target attenuation value to the bias voltage, so that excessive complex application and repeated calculation are avoided.
Preferably, the digital-to-analog converter output contains dither interference signals that directly cause jitter in the bias voltage and thus affect the stable operation of the variable gain attenuator. To solve this output ripple voltage, an RC Low Pass Filter (LPF) is added at the output of the digital-to-analog converter. When R C is respectively valued, the cut-off voltage can be calculated by the following formula.
F=1/(2πRC)
The RC low pass filter can effectively filter the high frequency pulsation interference signal so that the system can work more stably.
Preferably, the output voltage of the high-precision digital-to-analog converter is pulled by an output current load, typically with a rate of change of 78uV/mA. As shown in fig. 2, a unity gain voltage buffer is introduced at the output of the RC low pass filter. Preferably, the buffer is internally provided with a plurality of cascaded inverters, so that the delay of the output signal of the high-precision digital-to-analog converter is increased, and the influence of the load traction on the circuit can be effectively eliminated.
Preferably, as shown in fig. 3, the variable gain attenuator is implemented by an MOS transistor in an X-type structure, and the X-type attenuator structure is basically formed by respectively cross-coupling two FET transistors in a differential signal path, and the two FET transistors are commonly formed in a phase signal path. The input end of the FET tube is converted from a single-ended signal to a differential signal by a transformer formed by two inductance coils. The traditional single-ended input signal has weak anti-interference capability and large noise, and more noise can be introduced when the single-ended input signal is applied at high frequency, so that the actual effective signal is deteriorated. Differential inputs have better stability and interference immunity than single-ended inputs. The output end also uses a transformer to realize the conversion from differential signals to single-ended output voltage. As shown in fig. 4, it can be seen that the circuit gain changes are determined by the difference between R1 and R2, and the phase changes are exactly opposite. This structure can realize a wide gain control range and low phase conversion without consuming direct current power.
The method is used for accurately measuring the precision and the phase error of the millimeter wave attenuator. The invention effectively reduces the excessively complex calculation and device in the millimeter wave attenuator realization process through the arrangement of the high-precision digital-analog converter, the lookup table module, the low-pass filter and the buffer. The X-type attenuator structure of the invention converts the differential signal and the single-ended signal with each other through the transformer, thereby reducing noise, improving the stability of the system and needing no consumption of direct current power.
Example 3:
the embodiment is further optimized based on embodiment 1 or embodiment 2, as shown in fig. 5, and further includes voltage-controlled attenuators, where the FET input ends of the variable gain attenuators are respectively provided with a voltage-controlled attenuator, so that a larger range of attenuation can be realized based on improving the phase shift. Preferably, the voltage-controlled attenuator comprises a plurality of cascaded MOS tube assemblies.
As shown in fig. 6, the voltage controlled attenuator internal structure: each MOS tube corresponds to a plurality of MOS tube series structures in the interior to realize power resistance, and the circuit is not limited to three groups shown in the figure, correspondingly increases or reduces components, and the principle is the same within the protection range. The input and output of the basic T-shaped structure of the attenuator are connected across two resistors to form a bridge T-shaped structure, three groups of MOS (MOS with different numbers and sizes are stacked in each group) are connected in series on the basis of the bridge T-shaped structure, the parallel branch is composed of three groups of MOS tubes, the basic voltages V3, V4 and V5 are the same as the voltages V6, V7 and V8 in amplitude and opposite in phase, when the attenuator works in a reference state, the MOS tubes are controlled to be conducted by the V3, V4 and V5, and the MOS tubes are controlled to be turned off by the V6, V7 and V8, so that a path is realized from input to output; when the MOS transistors are in an attenuation state, the MOS transistors are controlled to be turned off by V3, V4 and V5, the MOS transistors are controlled to be turned on by V6, V7 and V8, and different on-resistances are generated by different voltage control and are respectively connected in series with the ground resistance to realize different attenuation amounts.
The voltage-controlled attenuator and the X-type variable gain attenuator are applied, a larger range of attenuation can be realized on the basis of improving phase shift, the conversion from voltages V1 to V3, V4, V5, V2 to V6, V7 and V8 is realized through the design of a specific analog circuit module, the amplitudes of the voltages V1, V3, V4, V5 and the voltages V2, V6, V7 and V8 are the same and opposite in phase, the V3, V4 and V5 are different by fixed voltage values in sequence, when the V1 is in a low level, the V2 is in a high level, the corresponding V3, V4 and V5 are increased in sequence, the V6, V7 and V8 are decreased in sequence, and the corresponding MOS tubes are controlled to generate different on-resistances, so that different attenuation ranges are realized, and the attenuator in FIG. 5 can realize at least 40dB of attenuation when the millimeter wave frequency band guarantees smaller additional phase shift. When the differential input is needed, three groups of parallel tubes of the two voltage-controlled attenuators can be connected in series correspondingly to form a differential structure, and the differential attenuator structure can be directly applied to a balun structure without extra radio frequency.
Other portions of this embodiment are the same as those of embodiment 1 or embodiment 2, and thus will not be described in detail.
The foregoing description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and any simple modification, equivalent variation, etc. of the above embodiment according to the technical matter of the present invention fall within the scope of the present invention.
Claims (7)
1. The novel millimeter wave digital attenuator is characterized by comprising a lookup table module, a singlechip, a high-precision digital-to-analog converter, a first branch, a second branch and a variable gain attenuator which are sequentially connected from front to back; a first branch and a second branch are arranged between the high-precision digital-to-analog converter and the variable gain attenuator in parallel; the first branch and the second branch respectively comprise a low-pass filter and a buffer which are sequentially arranged from front to back;
the lookup table module is used for storing the bias voltage value required by the variable gain attenuator and the corresponding step attenuation; the singlechip is used for controlling the high-precision digital-to-analog converter to output the bias voltage required by the variable gain attenuator; the high-precision digital-to-analog converter is used for providing accurate voltage control for the variable gain attenuator; the low-pass filter is used for filtering the high-frequency pulsation interference signals, and the buffer is used for enabling the output signals of the high-precision digital-to-analog converter to be delayed so as to eliminate the influence of load traction on the circuit;
the variable gain attenuator is of an X-shaped attenuator structure and comprises two FET tubes which are cross-coupled in a differential signal path and two FET tubes which are connected in parallel in a phase signal path; the input end of the FET tube is provided with a transformer for realizing the conversion from a single-ended signal to a differential signal, and the output end of the FET tube is provided with a transformer for realizing the output voltage after the conversion from the differential signal to the single-ended signal;
the voltage-controlled attenuator is of a T-shaped structure, a plurality of groups of MOS (metal oxide semiconductor) tubes are arranged on serial branches of the voltage-controlled attenuator, a plurality of parallel branches are correspondingly arranged on the voltage-controlled attenuator, and MOS tubes are arranged on the parallel branches; two voltage-controlled attenuators are arranged between the variable gain attenuator and the transformer, and the variable gain attenuator is connected with a parallel branch of the voltage-controlled attenuators.
2. The novel millimeter wave digital attenuator according to claim 1, wherein the variable gain attenuator comprises MOS tubes M1-M4, the MOS tube M2 and the MOS tube M3 are cross-coupled in a differential signal path, and the MOS tube M1 and the MOS tube M4 are arranged in parallel in a phase signal path; the gates of the MOS tube M1 and the MOS tube M4 are connected in series with a resistor R1 and then connected with a bias voltage V1, and the gates of the MOS tube M2 and the MOS tube M3 are connected in series with a resistor R2 and then connected with a bias voltage V2; the input end of the MOS tube M1-M4 is connected with a transformer T1 formed by two inductance coils for realizing the conversion from a single-ended signal to a differential signal, and the output end of the MOS tube M1-M4 is connected with a transformer T2 formed by two inductance coils for realizing the output voltage after the conversion from the differential signal to the single-ended signal.
3. The novel millimeter wave digital attenuator of claim 2, wherein the gate voltage of the MOS transistor is stepped to 0.2V.
4. The novel millimeter wave digital attenuator of claim 1, wherein the high-precision digital-to-analog converter is a 16-bit digital-to-analog converter chip of a multi-output voltage range, and the 16-bit digital-to-analog converter chip comprises four paths of digital-to-analog conversion interfaces.
5. The novel millimeter wave digital attenuator of claim 1, wherein the buffer comprises a plurality of cascaded inverters.
6. The novel millimeter wave digital attenuator of claim 1, wherein the buffer is a unity gain voltage buffer.
7. The novel millimeter wave digital attenuator of claim 1, wherein the incremental increase in attenuation of the millimeter wave digital attenuator is less than or equal to 0.5dB.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101349740A (en) * | 2008-07-29 | 2009-01-21 | 北京航空航天大学 | General-purpose satellite navigation signal interference source and method for generating signal thereof |
| JP2011199648A (en) * | 2010-03-19 | 2011-10-06 | Toshiba Corp | Variable-gain attenuator |
| CN111130503A (en) * | 2020-03-30 | 2020-05-08 | 南京汇君半导体科技有限公司 | Low-phase-difference numerical control radio frequency attenuator |
| CN111193553A (en) * | 2020-03-04 | 2020-05-22 | 中国电子科技集团公司第三十四研究所 | Light path insertion loss self-adaptive radio frequency optical receiver |
| CN116155235A (en) * | 2023-02-28 | 2023-05-23 | 东南大学 | Low insertion loss high-precision active numerical control attenuator |
-
2023
- 2023-07-20 CN CN202310889813.XA patent/CN116647209B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101349740A (en) * | 2008-07-29 | 2009-01-21 | 北京航空航天大学 | General-purpose satellite navigation signal interference source and method for generating signal thereof |
| JP2011199648A (en) * | 2010-03-19 | 2011-10-06 | Toshiba Corp | Variable-gain attenuator |
| CN111193553A (en) * | 2020-03-04 | 2020-05-22 | 中国电子科技集团公司第三十四研究所 | Light path insertion loss self-adaptive radio frequency optical receiver |
| CN111130503A (en) * | 2020-03-30 | 2020-05-08 | 南京汇君半导体科技有限公司 | Low-phase-difference numerical control radio frequency attenuator |
| CN116155235A (en) * | 2023-02-28 | 2023-05-23 | 东南大学 | Low insertion loss high-precision active numerical control attenuator |
Non-Patent Citations (2)
| Title |
|---|
| "60 GHz 7-Bit Passive Vector-Sum Phase Shifter With an X-Type Attenuator";Geon-Ho Park等;《IEEE Transactions on Circuits and Systems II: Express Briefs》;第70卷(第7期);第2356-2357页、图3 * |
| "宽量程智能射频功率检测***研究";姚达雯 等;《计算机测量与控制》;第22卷(第06期);第1722-1724, 1728页 * |
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