CN116565080A - Light emitting diode and preparation method thereof - Google Patents

Light emitting diode and preparation method thereof Download PDF

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Publication number
CN116565080A
CN116565080A CN202310840655.9A CN202310840655A CN116565080A CN 116565080 A CN116565080 A CN 116565080A CN 202310840655 A CN202310840655 A CN 202310840655A CN 116565080 A CN116565080 A CN 116565080A
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layer
alingan
ingan
polarity
source
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舒俊
程龙
高虹
郑文杰
印从飞
张彩霞
刘春杨
胡加辉
金从龙
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Jiangxi Zhao Chi Semiconductor Co Ltd
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Jiangxi Zhao Chi Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention discloses a light-emitting diode and a preparation method thereof, wherein the light-emitting diode comprises a substrate, an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer are sequentially arranged on the substrate, and the P-type contact layer comprises an ohmic contact layer, an N-polarity AlInGaN layer and an N-polarity InGaN/AlInGaN superlattice layer which are sequentially laminated on the P-type semiconductor layer; an N electrode is arranged on the N-type semiconductor layer, and a P electrode is arranged on the ohmic contact layer. The light-emitting diode provided by the invention can reduce the light absorption loss of the P-type contact layer material and improve the light-emitting efficiency, thereby improving the light-emitting efficiency of the LED chip.

Description

Light emitting diode and preparation method thereof
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a light-emitting diode and a preparation method thereof.
Background
Light Emitting Diodes (LEDs) have received great attention in recent years as a new energy-saving and environment-friendly light source, and many countries consider LED-related semiconductor lighting as a strategic technique. Through a great deal of research and development and experiments, the semiconductor lighting technology has been developed rapidly, so that commercialization of semiconductor lighting is truly realized, and various types of LEDs are widely applied to the fields of indication, display, backlight, projection and the like. These achievements achieved by semiconductor illumination have been mainly benefited by advances in GaN-based LED related technologies, which offer significant advantages over other material systems, both in efficiency and reliability.
The ohmic contact characteristics of the LED have a great influence on the light emitting efficiency and the operating voltage of the light emitting diode. And in P-type doping, the activation energy of Mg is high, resulting in low hole concentration, and it is difficult to form P-type ohmic contact. Today, the commonly used ohmic contact layer of an LED is a highly Mg doped InGaN structure, which affects the lattice quality, increases the light absorption, and thus affects the light emitting efficiency; and the light emitted from the active layer is absorbed and reflected by the ohmic contact layer when passing through the ohmic contact layer, and the light emitting efficiency of the light emitting diode is also affected. Therefore, in order to increase the light emitting efficiency of the GaN-based LED, it is necessary to improve the ohmic contact characteristics of the LED and to reduce the light absorption loss of the ohmic contact layer to increase the light emitting efficiency.
Disclosure of Invention
The invention aims to solve the technical problem of providing a light-emitting diode which can reduce the light absorption loss of a P-type contact layer material and improve the light-emitting efficiency, thereby improving the light-emitting efficiency of an LED chip.
The invention also aims to provide a preparation method of the light-emitting diode, which has simple process and can stably prepare the light-emitting diode with good luminous efficiency.
In order to solve the technical problems, the invention provides a light-emitting diode, which comprises a substrate, wherein an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer are sequentially arranged on the substrate, and the P-type contact layer comprises an ohmic contact layer, an N-polarity AlInGaN layer and an N-polarity InGaN/AlInGaN superlattice layer which are sequentially laminated on the P-type semiconductor layer;
an N electrode is arranged on the N-type semiconductor layer, and a P electrode is arranged on the ohmic contact layer.
In one embodiment, the ohmic contact layer is an Mg-doped InGaN layer;
the thickness of the ohmic contact layer is 2 nm-10 nm.
In one embodiment, the In component of the Mg doped InGaN layer is 0 to 0.2;
the Mg doping concentration of the Mg-doped InGaN layer is 2 multiplied by 10 19 atoms/cm 3 ~5×10 22 atoms/cm 3 。
In one embodiment, the thickness of the N-polar AlInGaN layer is 0.5 nm-3 nm;
the Al component of the N-polarity AlInGaN layer is 0-0.2, and the in component is 0-0.2.
In one embodiment, the N-polar InGaN/AlInGaN superlattice layer includes alternately stacked porous InGaN layers and AlInGaN layers.
The alternating period number of the N-polarity InGaN/AlInGaN superlattice layer is 1-5.
In one embodiment, the In component of the porous InGaN layer is 0-0.3, and the thickness of the porous InGaN layer is 0.5 nm-1 nm;
the Al component of the AlInGaN layer is 0-0.15, the in component is 0-0.15, and the thickness of the AlInGaN layer is 0.5-1 nm.
In order to solve the above problems, the present invention provides a method for manufacturing a light emitting diode, comprising the following steps:
s1, preparing a substrate;
s2, an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer are sequentially deposited on the substrate, wherein the P-type contact layer comprises an ohmic contact layer, an N-polarity AlInGaN layer and an N-polarity InGaN/AlInGaN superlattice layer which are sequentially laminated on the P-type semiconductor layer;
s3, an N electrode is arranged on the N-type semiconductor layer, and a P electrode is arranged on the ohmic contact layer.
In one embodiment, the ohmic contact layer is made by:
and (5) introducing an In source, a Ga source, an N source and an Mg source to finish the deposition of the Mg-doped InGaN layer.
In one embodiment, the N-polar AlInGaN layer is made using the following method:
introducing an In source, a Ga source, an N source and an Al source to finish the deposition of the AlInGaN layer;
then go through NH 3 And (3) carrying out gas treatment to enable the AlInGaN layer to form an N-polarity contact surface, so as to obtain the N-polarity AlInGaN layer.
In one embodiment, the N-polar InGaN/AlInGaN superlattice layer is fabricated by:
firstly, an In source, a Ga source and an N source are introduced to finish the deposition of an InGaN layer, and then NH is carried out on the InGaN layer 3 Performing gas treatment to form an N-polarity InGaN layer;
h is carried out on the N-polarity InGaN layer 2 Performing gas treatment to obtain an N-polarity porous InGaN layer;
then an In source, a Ga source, an N source and an Al source are introduced, the deposition of an AlInGaN layer is completed on the N-polarity porous InGaN layer, and then NH is carried out 3 Performing gas treatment to enable the AlInGaN layer to form an N-polarity contact surface to obtain an N-polarity AlInGaN layer;
and alternately laminating the N-polarity porous InGaN layer and the N-polarity AlInGaN layer to obtain the N-polarity InGaN/AlInGaN superlattice layer.
The implementation of the invention has the following beneficial effects:
the light emitting diode provided by the invention has a P-type contact layer with a specific structure, wherein the P-type contact layer comprises an ohmic contact layer, an N-polarity AlInGaN layer and an N-polarity InGaN/AlInGaN superlattice layer. The ohmic contact layer is made of an InGaN material with high doping Mg element, and the P electrode is arranged on the ohmic contact layer. The N-polarity AlInGaN layer is easy to prepare a rough surface by growing the N-polarity material, and the N-polarity roughened layer is obtained, so that light is emitted; meanwhile, al element is doped, and the surface of the grown epitaxial layer material is further roughened due to higher adhesiveness of Al atoms. In addition, due to the high forbidden bandwidth of the AlN material, doping Al element in the N-polarity AlInGaN layer can effectively weaken the light absorption loss of the P-type contact layer material, and further improve light emission. The N-polar InGaN/AlInGaN superlattice layer further coarsens the surface, which is beneficial to light extraction. By combining the design of the P-type contact layer, the light absorption loss of the contact layer material can be effectively reduced, the light emitting efficiency of the contact layer is improved, and finally the light emitting efficiency of the LED chip is improved.
Drawings
Fig. 1 is a schematic structural diagram of a light emitting diode according to the present invention;
fig. 2 is a schematic structural diagram of a P-type contact layer of a light emitting diode according to the present invention;
fig. 3 is a flowchart of a method for manufacturing a light emitting diode according to the present invention.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
Unless otherwise indicated or contradicted, terms or phrases used herein have the following meanings:
in the present invention, "preferred" is merely to describe embodiments or examples that are more effective, and it should be understood that they are not intended to limit the scope of the present invention.
In the invention, the technical characteristics described in an open mode comprise a closed technical scheme composed of the listed characteristics and also comprise an open technical scheme comprising the listed characteristics.
In the present invention, the numerical range is referred to, and both ends of the numerical range are included unless otherwise specified.
In order to solve the above problems, the present invention provides a light emitting diode, as shown in fig. 1 and 2, comprising a substrate 100, wherein an N-type semiconductor layer 200, a multiple quantum well layer 300, an electron blocking layer 400, a P-type semiconductor layer 500, and a P-type contact layer 600 are sequentially disposed on the substrate 100, and the P-type contact layer 600 comprises an ohmic contact layer 610, an N-polarity AlInGaN layer 620, and an N-polarity InGaN/AlInGaN superlattice layer 630 sequentially stacked on the P-type semiconductor layer 500;
an N electrode 700 is disposed on the N-type semiconductor layer 200, and a P electrode 800 is disposed on the ohmic contact layer 610.
The light emitting diode provided by the invention has a P-type contact layer 600 with a specific structure, wherein the P-type contact layer 600 comprises an ohmic contact layer 610, an N-polarity AlInGaN layer 620 and an N-polarity InGaN/AlInGaN superlattice layer 630. The ohmic contact layer 610 is made of InGaN material with high doping Mg element, and the P electrode 800 is disposed on the ohmic contact layer 610. The N-polar AlInGaN layer 620 is easier to prepare a rough surface by growing the N-polar material, and the N-polar roughened layer is obtained, which is beneficial to light extraction; meanwhile, al element is doped, and the surface of the grown epitaxial layer material is further roughened due to higher adhesiveness of Al atoms. In addition, due to the high forbidden bandwidth of the AlN material, doping the N-polar AlInGaN layer 620 with Al element can effectively reduce the light absorption loss of the P-type contact layer 600 material, and further improve the light extraction. The N-polar InGaN/AlInGaN superlattice layer 630 further coarsens the surface, which is beneficial for light extraction. By combining the design of the P-type contact layer 600, the light absorption loss of the contact layer material can be effectively reduced, the light emitting efficiency of the contact layer can be improved, and finally the light emitting efficiency of the LED chip can be improved.
The specific structure of the three sublayers of the P-type contact layer 600 is as follows:
in one embodiment, the ohmic contact layer 610 is an Mg-doped InGaN layer; the thickness of the Mg-doped InGaN layer is 2 nm-10 nm; exemplary thicknesses of the Mg doped InGaN layer are 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, but are not limited thereto; the In component of the Mg-doped InGaN layer is 0-0.2; exemplary In compositions of the Mg doped InGaN layer are 0.05, 0.1, 0.15, but are not limited thereto. In one embodiment, the Mg doped InGaN layer has a Mg doping concentration of 2×10 19 atoms/cm 3 ~5×10 22 atoms/cm 3 . Preferably, the Mg doping concentration of the Mg-doped InGaN layer is 1×10 20 atoms/cm 3 ~1×10 22 atoms/cm 3 . In the invention, the ohmic contact layer 610 is made of an InGaN material with high doping Mg element, the P electrode 800 is arranged on the ohmic contact layer 610, and the structure can ensure that the LED chip has good P-type ohmic contact characteristic.
In one embodiment, the thickness of the N-polar AlInGaN layer 620 is 0.5nm to 3nm; exemplary thicknesses of the N-polar AlInGaN layer 620 are 1nm, 1.5nm, 2nm, 2.5nm, but are not limited thereto; the Al component of the N-polar AlInGaN layer 620 is 0-0.2; exemplary Al compositions of the N-polar AlInGaN layer 620 are, but are not limited to, 0.05, 0.1, 0.15. The In composition of the N-polar AlInGaN layer 620 is 0-0.2; exemplary In compositions of the N-polar AlInGaN layer 620 are, but not limited to, 0.05, 0.1, 0.15. In the N-polar AlInGaN layer 620 of the present invention, the rough surface is more easily prepared by growing the N-polar material, and the N-polar roughened layer is obtained, which is beneficial to light extraction; meanwhile, al element is doped, and the surface of the grown epitaxial layer material is further roughened due to higher adhesiveness of Al atoms. In addition, due to the high forbidden bandwidth of the AlN material, doping the N-polar AlInGaN layer 620 with Al element can effectively reduce the light absorption loss of the P-type contact layer 600 material, and further improve the light extraction.
In one embodiment, the N-polar InGaN/AlInGaN superlattice layer 630 includes porous InGaN layers and AlInGaN layers alternately stacked; the alternating period number of the N-polarity InGaN/AlInGaN superlattice layer 630 is 1-5; exemplary cycle numbers are 2, 3, 4, but are not limited thereto. In one embodiment, the In component of the porous InGaN layer is 0 to 0.3; the In composition of the porous InGaN layer is 0.05, 0.1, 0.15, 0.2, 0.25, but is not limited thereto; the thickness of the porous InGaN layer is 0.5 nm-1 nm; exemplary thicknesses of the porous InGaN layer are 0.6nm, 0.7nm, 0.8nm, 0.9nm, but are not limited thereto; the Al component of the AlInGaN layer is 0-0.15; the Al composition of the AlInGaN layer is 0.05, 0.1, 0.11, 0.12, 0.13, 0.14, but is not limited thereto; the In component of the AlInGaN layer is 0-0.15; the In composition of the AlInGaN layer is 0.05, 0.1, 0.11, 0.12, 0.13, 0.14, but is not limited thereto; the thickness of the AlInGaN layer is 0.5 nm-1 nm; exemplary thicknesses of the AlInGaN layer are, but not limited to, 0.6nm, 0.7nm, 0.8nm, 0.9 nm.
The N-polar InGaN/AlInGaN superlattice layer 630 adopts a superlattice structure of an N-polar InGaN sublayer with a high In component and an N-polar AlInGaN sublayer doped with Al element, which are periodically and alternately grown from bottom to top, that is, porous InGaN layers and AlInGaN layers are alternately stacked. Wherein the porous InGaN layer is formed by depositing N-polar InGaN sub-layer and then passing through H 2 Gas treatment with H 2 The etching action of the gas treatment on In atoms causes the surface to be further roughened into a porous structure, which is beneficial to light extraction; and meanwhile, in atoms In the material are reduced, the forbidden bandwidth of the material is widened, and the light absorption loss of the material can be reduced.
By combining the design of the P-type contact layer 600, the light absorption loss of the contact layer material can be effectively reduced, the light emitting efficiency of the contact layer can be improved, and finally the light emitting efficiency of the LED chip can be improved.
Correspondingly, the invention provides a preparation method of the light-emitting diode, as shown in fig. 3, comprising the following steps:
s1, preparing a substrate 100;
in one embodiment, the substrate material may be Si, siC, al 2 O 3 One of the materials.
S2, sequentially depositing an N-type semiconductor layer 200, a multiple quantum well layer 300, an electron blocking layer 400, a P-type semiconductor layer 500 and a P-type contact layer 600 on the substrate 100;
the P-type contact layer 600 includes an ohmic contact layer 610, an N-polarity AlInGaN layer 620, and an N-polarity InGaN/AlInGaN superlattice layer 630 sequentially stacked on the P-type semiconductor layer 500.
In one embodiment, the ohmic contact layer 610 is formed by:
and (5) introducing an In source, a Ga source, an N source and an Mg source to finish the deposition of the Mg-doped InGaN layer.
In one embodiment, the N-polar AlInGaN layer 620 is made using the following method:
introducing an In source, a Ga source, an N source and an Al source to finish the deposition of the AlInGaN layer;
then go through NH 3 And (3) performing gas treatment to enable the AlInGaN layer to form an N-polarity contact surface, so as to obtain an N-polarity AlInGaN layer 620.
In one embodiment, the N-polar InGaN/AlInGaN superlattice layer 630 is fabricated by:
firstly, an In source, a Ga source and an N source are introduced to finish the deposition of an InGaN layer, and then NH is carried out on the InGaN layer 3 Performing gas treatment to form an N-polarity InGaN layer;
h is carried out on the N-polarity InGaN layer 2 Performing gas treatment to obtain an N-polarity porous InGaN layer;
then an In source, a Ga source, an N source and an Al source are introduced, the deposition of an AlInGaN layer is completed on the N-polarity porous InGaN layer, and then NH is carried out 3 Performing gas treatment to enable the AlInGaN layer to form an N-polarity contact surface to obtain an N-polarity AlInGaN layer;
the N-polarity porous InGaN layer and the N-polarity AlInGaN layer are alternately laminated to obtain the N-polarity InGaN/AlInGaN superlattice layer 630.
S3, an N electrode 700 is disposed on the N-type semiconductor layer 200, and a P electrode 800 is disposed on the ohmic contact layer 610.
In one embodiment, the P-type contact layer 600 is etched by dry etching, the etching depth is from the surface to the ohmic contact layer 610, and a metal is deposited on the etched ohmic contact layer 610 by a metal sputtering method to form a P-electrode 800;
in one embodiment, the P-type contact layer 600 is etched by dry etching, the etching depth is from the surface to the N-type semiconductor layer 200, and the N electrode 700 is formed by depositing metal on the etched N-type semiconductor layer 200 by sputtering metal, thereby completing the fabrication of the LED chip.
The invention is further illustrated by the following examples:
example 1
The embodiment provides a light-emitting diode, which comprises a substrate, wherein an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer are sequentially arranged on the substrate, and the P-type contact layer comprises an ohmic contact layer, an N-polarity AlInGaN layer and an N-polarity InGaN/AlInGaN superlattice layer which are sequentially laminated on the P-type semiconductor layer;
an N electrode is arranged on the N-type semiconductor layer, and a P electrode is arranged on the ohmic contact layer.
The ohmic contact layer is an InGaN layer doped with Mg, the thickness is 5nm, the in component is 0.1, and the doping concentration of Mg is 1 multiplied by 10 21 atoms/cm 3 。
The thickness of the N-polar AlInGaN layer is 1.5nm, the Al component is 0.1, and the in component is 0.1.
The N-polarity InGaN/AlInGaN superlattice layer comprises porous InGaN layers and AlInGaN layers which are alternately laminated, and the alternating period number is 3.
The In component of the porous InGaN layer is 0.2, and the thickness of the porous InGaN layer is 0.7nm; the Al component of the AlInGaN layer is 0.1, the in component is 0.1, and the thickness is 0.7nm.
Example 2
The present embodiment provides a light emitting diode, which is different from embodiment 1 in that: the ohmic contact layer is an InGaN layer doped with Mg, and the thickness is 10nm. The remainder was the same as in example 1.
Example 3
The present embodiment provides a light emitting diode, which is different from embodiment 1 in that: the thickness of the N-polar AlInGaN layer is 3nm. The remainder was the same as in example 1.
Comparative example 1
This comparative example is different from example 1 in that the P-type contact layer thereof includes an N-polarity AlInGaN layer, an N-polarity InGaN/AlInGaN superlattice layer, and no ohmic contact layer, which are sequentially stacked on the P-type semiconductor layer. The remainder was the same as in example 1.
Comparative example 2
This comparative example is different from example 1 in that the P-type contact layer includes an ohmic contact layer, an N-polarity InGaN/AlInGaN superlattice layer, and no N-polarity AlInGaN layer, which are sequentially stacked on the P-type semiconductor layer. The remainder was the same as in example 1.
Comparative example 3
This comparative example is different from example 1 in that the P-type contact layer thereof includes an ohmic contact layer, an N-polarity AlInGaN layer, and no N-polarity InGaN/AlInGaN superlattice layer, which are sequentially stacked on the P-type semiconductor layer. The remainder was the same as in example 1.
The light emitting diodes prepared in examples 1 to 3 and comparative examples 1 to 3 were prepared into 10×24mil chips using the same chip process conditions, 300 LED chips were extracted, and the operation voltage, brightness and light efficiency improvement ratio of the obtained chips with respect to comparative example 1 were tested at 120 mA current, and specific test results are shown in table 1.
Table 1 results of Performance test of LEDs prepared in examples 1 to 3 and comparative examples 1 to 3
As can be seen from the above results, the light emitting diode provided by the present invention has a P-type contact layer with a specific structure, wherein the P-type contact layer comprises an ohmic contact layer, an N-polar AlInGaN layer and an N-polar InGaN/AlInGaN superlattice layer. The ohmic contact layer is made of an InGaN material with high doping Mg element, and the P electrode is arranged on the ohmic contact layer. The N-polarity AlInGaN layer is easy to prepare a rough surface by growing the N-polarity material, and the N-polarity roughened layer is obtained, so that light is emitted; meanwhile, al element is doped, and the surface of the grown epitaxial layer material is further roughened due to higher adhesiveness of Al atoms. In addition, due to the high forbidden bandwidth of the AlN material, doping Al element in the N-polarity AlInGaN layer can effectively weaken the light absorption loss of the P-type contact layer material, and further improve light emission. The N-polar InGaN/AlInGaN superlattice layer further coarsens the surface, which is beneficial to light extraction. By combining the design of the P-type contact layer, the light absorption loss of the contact layer material can be effectively reduced, the light emitting efficiency of the contact layer is improved, and finally the light emitting efficiency of the LED chip is improved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.

Claims (10)

1. The light-emitting diode is characterized by comprising a substrate, wherein an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer are sequentially arranged on the substrate, and the P-type contact layer comprises an ohmic contact layer, an N-polarity AlInGaN layer and an N-polarity InGaN/AlInGaN superlattice layer which are sequentially laminated on the P-type semiconductor layer;
an N electrode is arranged on the N-type semiconductor layer, and a P electrode is arranged on the ohmic contact layer.
2. The light emitting diode of claim 1, wherein the ohmic contact layer is a Mg doped InGaN layer;
the thickness of the ohmic contact layer is 2 nm-10 nm.
3. The led of claim 2, wherein the Mg doped InGaN layer has an In composition of 0-0.2;
the Mg doping concentration of the Mg-doped InGaN layer is 2 multiplied by 10 19 atoms/cm 3 ~5×10 22 atoms/cm 3 。
4. The light emitting diode of claim 1, wherein the N-polar AlInGaN layer has a thickness of 0.5nm to 3nm;
the Al component of the N-polarity AlInGaN layer is 0-0.2, and the in component is 0-0.2.
5. The light emitting diode of claim 1, wherein the N-polar InGaN/AlInGaN superlattice layer comprises porous InGaN layers and AlInGaN layers alternately stacked;
the alternating period number of the N-polarity InGaN/AlInGaN superlattice layer is 1-5.
6. The light-emitting diode according to claim 5, wherein the In composition of the porous InGaN layer is 0 to 0.3;
the thickness of the porous InGaN layer is 0.5 nm-1 nm;
the Al component of the AlInGaN layer is 0-0.15, and the in component is 0-0.15;
the thickness of the AlInGaN layer is 0.5 nm-1 nm.
7. A method for manufacturing a light emitting diode according to any one of claims 1 to 6, comprising the steps of:
s1, preparing a substrate;
s2, an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer are sequentially deposited on the substrate, wherein the P-type contact layer comprises an ohmic contact layer, an N-polarity AlInGaN layer and an N-polarity InGaN/AlInGaN superlattice layer which are sequentially laminated on the P-type semiconductor layer;
s3, an N electrode is arranged on the N-type semiconductor layer, and a P electrode is arranged on the ohmic contact layer.
8. The method of manufacturing a light emitting diode according to claim 7, wherein the ohmic contact layer is manufactured by:
and (5) introducing an In source, a Ga source, an N source and an Mg source to finish the deposition of the Mg-doped InGaN layer.
9. The method of manufacturing a light emitting diode according to claim 7, wherein the N-polar AlInGaN layer is manufactured by:
introducing an In source, a Ga source, an N source and an Al source to finish the deposition of the AlInGaN layer;
then go through NH 3 And (3) carrying out gas treatment to enable the AlInGaN layer to form an N-polarity contact surface, so as to obtain the N-polarity AlInGaN layer.
10. The method of claim 7, wherein the N-polar InGaN/AlInGaN superlattice layer is prepared by:
firstly, an In source, a Ga source and an N source are introduced to finish the deposition of an InGaN layer, and then NH is carried out on the InGaN layer 3 Performing gas treatment to form an N-polarity InGaN layer;
h is carried out on the N-polarity InGaN layer 2 Performing gas treatment to obtain an N-polarity porous InGaN layer;
then an In source, a Ga source, an N source and an Al source are introduced, the deposition of an AlInGaN layer is completed on the N-polarity porous InGaN layer, and then NH is carried out 3 Performing gas treatment to enable the AlInGaN layer to form an N-polarity contact surface to obtain an N-polarity AlInGaN layer;
and alternately laminating the N-polarity porous InGaN layer and the N-polarity AlInGaN layer to obtain the N-polarity InGaN/AlInGaN superlattice layer.
CN202310840655.9A 2023-07-11 2023-07-11 Light emitting diode and preparation method thereof Pending CN116565080A (en)

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