CN116559734A - Vertical Hall magnetic field sensing element - Google Patents
Vertical Hall magnetic field sensing element Download PDFInfo
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- CN116559734A CN116559734A CN202210098533.2A CN202210098533A CN116559734A CN 116559734 A CN116559734 A CN 116559734A CN 202210098533 A CN202210098533 A CN 202210098533A CN 116559734 A CN116559734 A CN 116559734A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 12
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- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000007943 implant Substances 0.000 claims description 27
- 230000000903 blocking effect Effects 0.000 claims description 19
- 230000035945 sensitivity Effects 0.000 abstract description 17
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- 230000010354 integration Effects 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 230000009977 dual effect Effects 0.000 description 17
- 229910003460 diamond Inorganic materials 0.000 description 5
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- 238000013461 design Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/077—Vertical Hall-effect devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a vertical Hall magnetic field sensing element, which is characterized in that two parallel deep implantation layers are arranged on a semiconductor substrate and used as current conduction carrier layers, a plurality of shallow implantation layers surrounded by N-type well areas are respectively arranged on different deep implantation layers to form a plurality of conductor connection pads electrically connected with the deep implantation layers, and current is allowed to form a vertical current path through a channel connected with the conductor connection pads through the middle, so that magnetic field sensing planes with different axial directions are generated according to the difference of the process depths between the deep implantation layers and the shallow implantation layers, and the technical effects of improving the sensing sensitivity and the convenience of circuit integration are achieved.
Description
Technical Field
The present invention relates to a hall magnetic field sensing element, and more particularly to a vertical hall magnetic field sensing element.
Background
In recent years, with the rapid development of semiconductor processes, miniaturization and integration of various electronic devices have not been a dream.
Generally, conventional hall sensing devices mainly use Lorentz force (Lorentz force) as a main principle. The principle is that when an external current is applied along the horizontal axis, a Hall voltage is generated between the vertical axes, and the voltage varies with the thickness, the sectional area, the external current and the magnetic field of the Hall sensing element. If a smaller magnetic field is to be sensed, this can be achieved by increasing the applied current, changing the thickness, or changing the carrier concentration. Currently, the commercially available hall sensing devices are mostly made of bipolar junction transistors (Bipolar Junction Transistor, BJT) or magnetic materials, and their readout circuits and signal processing circuits cannot be combined, so that they need to be manufactured separately and then integrated, which results in the disadvantages of high manufacturing cost and large product volume. On the other hand, since the output signal of the hall sensing element is generally small, a low input offset voltage and low noise characteristics are required. Therefore, how to effectively reduce the volume and increase the convenience of the integrated circuit is one of the problems to be solved by various manufacturers.
In summary, the problems of poor sensing sensitivity and inconvenient circuit integration in the prior art can be known, and therefore, there is a need to propose improved technical means for solving the problems.
Disclosure of Invention
First, the invention discloses a vertical Hall magnetic field sensing device, which is manufactured by standard Complementary Metal Oxide Semiconductor (CMOS) process, and comprises: a semiconductor substrate, a plurality of shallow implantation layers and a current blocking layer. Wherein, two parallel deep implantation layers are arranged on the semiconductor substrate to be used as a carrier layer for current conduction; the shallow implantation layers are respectively arranged on the upper surfaces of the same sides of the different deep implantation layers, each shallow implantation layer is surrounded by an N-type well region (N-well) to form a plurality of conductor connection pads electrically connected with the deep implantation layer, a vertical current path is formed by allowing current to pass through a channel connected with the middle of the deep implantation layer through the conductor connection pads, and magnetic field sensing planes with different axial directions are generated according to the difference of the process depths between the deep implantation layer and the shallow implantation layer; and the current blocking layer covers the deep implantation layer in a Guard Ring (Guard Ring) structure to serve as a current blocking object.
The difference between the element disclosed by the invention and the prior art is that the invention is characterized in that two parallel deep implantation layers are arranged on a semiconductor substrate and used as current conducting carrier layers, and a plurality of shallow implantation layers surrounded by N-type well regions are respectively arranged on different deep implantation layers so as to form a plurality of conductor connection pads electrically connected with the deep implantation layers, and current is allowed to form vertical current paths through the conductor connection pads through a channel connected in the middle, so that magnetic field sensing planes with different axial directions are generated according to the difference of the process depths between the deep implantation layers and the shallow implantation layers.
Through the technical means, the invention can achieve the technical effects of improving the sensing sensitivity and the convenience of circuit integration.
Drawings
Fig. 1 is a top view of a vertical hall magnetic field sensing element of the present invention.
Fig. 2A is a schematic diagram of a cross structure of a cross buried layer hall magnetic field sensing element.
Fig. 2B is a schematic diagram of a first embodiment of a hall magnetic field sensing element with a buried cross layer.
Fig. 2C is a schematic diagram of a second embodiment of a hall magnetic field sensing element with a buried cross layer.
Fig. 2D is a schematic diagram of a third embodiment of a hall magnetic field sensing element with a buried cross layer.
Fig. 2E is a schematic diagram of a fourth embodiment of a buried cross hall magnetic field sensing element.
Fig. 3A is a schematic diagram of a first embodiment of a dual E-type hall magnetic field sensing element.
FIG. 3B is a schematic diagram of a second embodiment of a dual E-type Hall magnetic field sensing element.
FIG. 3C is a schematic diagram of a third embodiment of a dual E-type Hall magnetic field sensing element.
FIG. 3D is a schematic diagram of a fourth embodiment of a dual E-type Hall magnetic field sensing element.
Reference numerals illustrate:
100. vertical Hall magnetic field sensing element
110. Semiconductor substrate
111. 112 deep implantation layer
121-126 shallow implantation layer
130. Current blocking layer
131-136N type well region
141-146 conductor connecting pad
151. 152 channels
200. Cross-shaped framework
201. Corner angle
210. Arc cross structure
211. Circular arc shape
220. Semi-arc cross structure
221. Semi-arc shape
230. Arc cross structure
231. Arc-shaped
240. Octagonal framework
241. Diamond shaped straight line
300. 310, 320, 330 dual E architecture
301. Bottom layer
303 N+ implantation layer
304 N-well implant layer
305. Current blocking layer
Detailed Description
The following detailed description of embodiments of the present invention will be given with reference to the drawings and examples, by which the implementation process of how the technical means are applied to solve the technical problems and achieve the technical effects can be fully understood and implemented.
Before explaining the vertical hall magnetic field sensing element disclosed by the invention, the word "electrical connection" used by the invention is explained; in fact, the "electrically connected" may be any direct or indirect electrical connection means. For example, if a plurality of conductive pads are described herein as being electrically connected to a deep implant layer, it should be understood that the deep implant layer may be directly connected to the conductive pads, or the deep implant layer may be indirectly connected to the conductive pads through other elements or some connection means. In addition, the use of the same dots or symbols in the drawings indicates the same elements, materials, or configurations.
The following describes the vertical hall magnetic field sensing device of the present invention with reference to fig. 1. FIG. 1 is a top view of a vertical Hall magnetic field sensing device 100 according to the present invention, which is fabricated by standard CMOS process, comprising: a semiconductor substrate 110, a plurality of shallow implant layers (121-126), and a current blocking layer 130. Wherein two deep implant layers (111, 112) parallel to each other are provided on the semiconductor substrate 110 as current conducting carrier layers. In practice, the deep implant layers (111, 112) are T-well implant layers (drawer layers).
The shallow implantation layers (121-126) are respectively arranged on the upper surfaces of the same sides of the different deep implantation layers (111, 112), each shallow implantation layer (121-126) is respectively surrounded by an N-type well region (131-136) for forming a plurality of conductor connection pads (141-146) electrically connected with the deep implantation layers (111, 112), and the first shallow implantation layer 121 is taken as an example, and the N-type well region 131 is used for surrounding to form the conductor connection pad 141; taking the second shallow implant 122 as an example, the N-well 132 is used to surround the conductor pad 142, and so on, to form six conductor pads (141-146). Then, current is allowed to pass through the conductor pads (141-146) to form vertical current paths through the channels (151, 152) connected between the deep implantation layers (111, 112), and magnetic field sensing planes with different axial directions are generated according to the difference of the process depths between the deep implantation layers (111, 112) and the shallow implantation layers (121-126) so as to sense magnetic field changes. In practical implementation, the shallow implant layers (121-126) are n+ implant layers for changing the conducting direction of carriers (carriers), increasing the resistance and reducing the thickness; the channels (151, 152) are wires or conductive wires (such as metal wires); the length and width of the conductor pads (141-146) may be selected from 15 μm to 90 μm, for example: 30 μm by 30 μm is selected as the dimension of the conductor pads (141 to 146). In addition, the conductor pads 141-146 may include a first conductor disposed in one of the deep implants (e.g., deep implant 112)The pad (i.e., conductor pad 141), the second conductor pad (i.e., conductor pad 142), the third conductor pad (i.e., conductor pad 143), and the fourth conductor pad (i.e., conductor pad 144), the fifth conductor pad (i.e., conductor pad 145), and the sixth conductor pad (i.e., conductor pad 146) disposed in another of the deep implants (i.e., deep implant 111), wherein the first conductor pad (i.e., conductor pad 141) is electrically connected to the fourth conductor pad (i.e., conductor pad 144), and serves as the first voltage sensing terminal (V H1 ) The fifth conductor pad (i.e.: conductor pad 145) is a current source input and a second conductor pad (i.e.: conductor pad 142) is a current source output, and a third conductor pad (i.e.: conductor pad 143) is electrically connected to the sixth conductor pad (i.e.: the conductor pad 146) serves as a second voltage sensing terminal (V H2 )。
The current blocking layer 130 covers the deep implant layers (111, 112) with guard ring structures as a current blocking barrier. In practical implementations, the current blocking layer 130 is a p+ guard ring structure. The vertical hall magnetic field sensing element 100 may further include a sense circuit for amplifying the voltage of the vertical hall magnetic field sensing element 100 with a differential amplifier, and a dc power supply for supplying the vertical hall magnetic field sensing element 100.
Next, in order to highlight the difference between the vertical hall magnetic field sensing element 100 and the planar hall magnetic field sensing element (including the buried cross hall magnetic field sensing element and the double E-type hall magnetic field sensing element), the following description will be made with reference to fig. 2A to 3D for different embodiments of the planar hall magnetic field sensing element. First, referring to fig. 2A, fig. 2A is a schematic diagram of a cross structure of a cross buried layer hall magnetic field sensing device. In practice, the Hall plane is made of Polysilicon (Polysilicon) layer, and is connected to the current source input/output terminal (I) bias +、I bias (-) and a voltage sense terminal (V) H1 、V H2 ) The cross-architecture 200 may be vertically arranged (i.e.: polysilicon layer), the cross-shaped structure 200 can be used with three dimensions, such as 30 μm, 60 μm, 90 μm, etc. in width. In addition, the current source outputs and inputsTerminal (I) bias +、I bias (-) and a voltage sense terminal (V) H1 、V H2 ) The angle formed by the vertical alignment (or referred to as "corner 201") may extend into three arcs, for example, the first arc as shown in fig. 2B. FIG. 2B is a schematic diagram of a first embodiment of a buried cross Hall magnetic field sensor device, which is connected between a current source input/output terminal (I bias +、I bias (-) and a voltage sense terminal (V) H1 、V H2 ) Two adjacent corners are pulled out to form a straight line and are retracted inwards to form an arc (hereinafter referred to as an arc 211), and then the arc cross-shaped framework 210 is formed by analogy; the second arc is different from the first arc in that the two ends of the arc are not at the ends of the angle, but are shown in fig. 2C. FIG. 2C is a schematic diagram of a second embodiment of a cross buried layer Hall magnetic field sensing element, which pulls out a straight line at half the side length, and contracts the pulled straight line inward to form an arc (hereinafter referred to as a half arc 221), and similarly forms a half arc cross structure 220; the third arc is shown in fig. 2D. Fig. 2D is a schematic diagram of a third embodiment of a cross buried layer hall magnetic field sensing device, which pulls a straight line at a quarter of the side length, and then also contracts the pulled straight line inward to form an arc 231, and so on to form an arc cross structure 230 as shown in fig. 2D. Note that, in addition to the cross shape, fig. 2E may be used. FIG. 2E is a schematic diagram of a fourth embodiment of a buried cross Hall magnetic field sensing device, which is connected between a current source input/output terminal (I bias +、I bias (-) and a voltage sense terminal (V) H1 、V H2 ) Two adjacent corners draw a straight line, and the like, to generate four straight lines 241 with diamond distribution, and the whole becomes an octagonal structure 240.
Next, taking the circular arc cross-shaped structure 210 as an example, three implantation structures can be used: (1) The N-well region covers the P+ implantation layer, the N-well implantation layer is used as a current conducting carrier, the N+ implantation layer is used as a conductor connecting pad connected with the N-well implantation layer, and the current blocking layer (or called an isolation layer) of the P+ protection ring is used as a current blocking object for the insulation between the elements; (2) Covering the P+ implantation layer by using the T-well implantation layer, and using the N+ implantation layer as a conductor connecting pad connected with the N-well implantation layer, wherein the insulation between the elements also uses a current blocking layer of a P+ protection ring framework as a current blocking object; (3) A P-well (P-well) is used to cover the N+ implant layer, which uses the P-well implant layer as a current conducting carrier and N+ as a current blocking barrier. Likewise, the semi-arc cross 220, arc cross 230 and octagon 240 may be used.
Next, the above-described different implant structures were measured at a constant voltage of 1.8V, the measurement results of which are shown in table 1, wherein "X" represents failure of the current conducting carrier, resulting in measurement failure:
table 1: 1.8V constant voltage measurement parameter comparison of cross buried layer Hall magnetic field sensing element
As can be seen from table 1, the implantation structure using the T-well implantation layer as the current conducting carrier is excellent in voltage sensitivity; the voltage sensitivity of the diamond design is obviously better than that of other radians under the comparison of the three radians of the architecture, and the diamond design is also better in the same-sized circular arc comparison with NW/P+ 60 mu m under the same cloth value architecture.
Next, table 2 is a measurement and analysis using a 0.1mA constant current regime, comprising individual measurements of three dimensions with a current conducting carrier N-well implant layer, covering the p+ layer as a barrier, and measurements of three dimensions with a current conducting carrier layer T-well implant layer, covering the p+ layer as a barrier, where "X" represents the failure of the current conducting carrier, rendering the measurement unexplained:
table 2: measurement parameter comparison of current measured by cross buried layer Hall magnetic field sensing element
As is clear from table 2, the implantation structure using the T-well implantation layer as the current conducting carrier has significantly better current sensitivity than other implantation layers; compared with the three radians, the result is different from the constant voltage measurement, the arc and semi-arc effects are identical, the current sensitivity of the arc and semi-arc effects is higher than that of a diamond, and the result is also better than the NW/P+ 60 mu m arc with the same size under the same cloth value structure.
Referring to fig. 3A, fig. 3A is a schematic diagram of a first embodiment of a dual E-type hall magnetic field sensing device. In addition to the cross-shaped structure, the planar hall magnetic field sensing device can also use the dual E-shaped structure 300 shown in fig. 3A, based on the comparison of the constant voltage and constant current measurement parameters of the cross buried layer hall magnetic field sensing device at different side lengths and corner radians, the voltage and current sensitivity of the dual E-shaped hall magnetic field sensing device is optimal when the dual E-shaped hall magnetic field sensing device is designed by using a 30 μm-sized structure, so that the dual E-shaped hall magnetic field sensing device can also use 30 μm as the standard dimension of the width and the current path length of the conductor pads, and the hall magnetic field sensing device can be designed into a square layout structure, wherein each conductor pad comprises an n+ implantation layer 303 and an N-well implantation layer 304, and the bottom layer 301 is covered by the current blocking layer 305. Then, in the corner arc design, the corner of the current path of the bottom layer 301 (T-well) is changed from right angle to arc angle, so as to reduce the probability of the current striking the implantation layer due to carrier deflection when the current is mediated by magnetic field, for example: the corner was designed as a corner R angle with a radius of 1.8 μm, which was radianally plotted to facilitate carrier flow when current deflection was demonstrated in the aforementioned buried cross architecture physical measurements. In fact, as shown in fig. 3B, a dual E-type structure 310 is also shown, and fig. 3B is a schematic diagram of a second embodiment of a dual E-type hall magnetic field sensing device, which changes the width and the side length of the conductor pad, for example: modified to 15 μm, even as shown in fig. 3C for the dual E-type architecture 320, fig. 3C is a schematic diagram of the third embodiment of the dual E-type hall magnetic field sensing element, which maintains the width of the conductor pad 30 μm, cancels the 30 μm side length, leaves only the corner R angle of 1.8 μm radian, or as shown in fig. 3D for the dual E-type architecture 330, fig. 3D is a schematic diagram of the fourth embodiment of the dual E-type hall magnetic field sensing element, which reduces the width of the conductor pad to 15 μm, cancels the side length, leaves only the corner R angle of 1.8 μm radian. In practical implementation, the implantation layer structure of the dual-E-type hall magnetic field sensing element adopts a deeper T-well implantation layer as a carrier layer for main current conduction, and uses an n+ and N-well implantation layer as a conductor pad, and a p+ implantation layer is used to set a guard ring of an outer ring, so that a current blocking layer is realized to block current, and the dual-E-type hall magnetic field sensing element is designed based on a magnetoresistive effect (MR) and is a novel one-dimensional dual-E-type hall magnetic field sensing element in the vertical direction of the Z axis.
The vertical Hall magnetic field sensing element is based on the improvement of the double E-type Hall magnetic field sensing element, the size of a conductor connecting pad can be 30 mu m multiplied by 30 mu m by taking a deeper T-well (namely a deep implanted layer) as a current conducting carrier layer, but the architecture design is realized in a plane current deflection mode, the depth difference of the implanted layers of the current direct type architecture is adopted, the conductor connecting pad connected with the T-well is established from N+ and N-well, current is directly poured into the deep T-well, and the current is directly turned on through a T-well channel connected in the middle, so that a vertical current path model is established. Next, the specifications of the vertical hall magnetic field sensing device of the present invention and the dual E-type architecture (300-330) shown in fig. 3A to 3D are listed in the following table 3:
table 3: specification list of hall magnetic field sensing elements
Then, based on constant voltage measurement, the vertical Hall magnetic field sensing element is measured in the X-axis direction and the planar Hall magnetic field sensing element is measured in the Z-axis direction by a micro magnetic field measuring system, the measured magnetic field ranges from-3.03 to +3.03 gauss (Gs), and the sensitivity and the linearity errors of each framework of the magnetic field sensing element are evaluated. The following measurement parameters were used for constant voltages of 1.8V and 3.3V:
table 4: measurement parameters for vertical architecture
Next, in the constant voltage measurement of the planar hall magnetic field sensor, the constant voltage measurement parameters of the two are shown in tables 5 and 6, respectively, on the basis of the measurement results of the magnetic field variation in the Z-axis direction perpendicular to the wafer-mounted semiconductor substrate, using the constant voltages of 1.8V and 3.3V:
table 5:1.8V constant voltage measurement parameter comparison
Table 6:3.3V constant voltage measurement parameter comparison
In the five planar architectures ("f15_1.8p" is the parallel architecture of f15_1.8 "), the current sensitivities of the magnetic field sensing elements denoted by" f30_31.8 "and" f15_16.8 "are best, wherein the occupied area of" f15_16.8 "is the smallest, and the linearity error and symmetry error are more prominent, compared with the constant voltage measurement parameter results of 1.8V and 3.3V in each of tables 5 and 6. In addition, the working voltage difference is used for comparison, the voltage is increased from 1.8V to 3.3V, and the voltage sensitivity and the current sensitivity are not increased, and even the sensitivity is greatly reduced. Although the voltage sensitivity and the current sensitivity of the vertical Hall magnetic field sensing element of the invention are not optimal, the voltage sensitivity and the current sensitivity still achieve the goal of 100mV/mT, and the linearity error of the negative magnetic field direction is excellent.
In summary, the difference between the present invention and the prior art is that two parallel deep implantation layers are disposed on the semiconductor substrate as current conducting carrier layers, and a plurality of shallow implantation layers surrounded by N-type well regions are disposed on different deep implantation layers, respectively, so as to form a plurality of conductive pads electrically connected to the deep implantation layers, and allow the current to form a vertical current path through the conductive pads through the channels connected therebetween, so as to generate magnetic field sensing planes with different axial directions according to the difference of the process depths between the deep implantation layers and the shallow implantation layers.
Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, but rather, it should be understood that various changes and modifications can be made therein by one skilled in the art without departing from the spirit and scope of the present invention as defined by the appended claims.
Claims (8)
1. A vertical hall magnetic field sensing device fabricated using standard CMOS processes, the device comprising:
a semiconductor substrate on which two deep implantation layers parallel to each other are disposed as a carrier layer for current conduction;
the shallow implantation layers are respectively arranged on the upper surfaces of the same sides of different deep implantation layers, each shallow implantation layer is respectively surrounded by an N-type well region (N-well) to form a plurality of conductor connection pads electrically connected with the deep implantation layer, a vertical current path is formed by allowing current to pass through a channel connected with the middle of the deep implantation layer through the conductor connection pads, and magnetic field sensing planes with different axial directions are generated according to the difference of the process depths between the deep implantation layer and the shallow implantation layer; and
and the current blocking layer covers the deep implantation layer with a guard ring structure and serves as a current blocking object.
2. The vertical hall magnetic field sensing device of claim 1, further comprising a sense circuit and a dc power supply to the vertical hall magnetic field sensing device, the sense circuit amplifying the voltage of the vertical hall magnetic field sensing device with a differential amplifier.
3. The vertical hall magnetic field sensing element of claim 1, wherein the deep implant layer is a T-well implant layer.
4. The vertical hall magnetic field sensing device according to claim 1, wherein the shallow implant layer is used to change the conduction direction of the carrier, increase the resistance and reduce the thickness.
5. The vertical hall magnetic field sensing element of claim 1, wherein the shallow implant layer is an n+ implant layer.
6. The vertical hall magnetic field sensing element according to claim 1, wherein the length and width of the conductor pads are each selected from one of 15 μm to 90 μm.
7. The vertical hall magnetic field sensing device according to claim 1, wherein the conductive pad comprises a first conductive pad, a second conductive pad, a third conductive pad, and a fourth conductive pad, a fifth conductive pad, and a sixth conductive pad disposed on one of the deep implants, wherein the first conductive pad is electrically connected to the fourth conductive pad and is used as a first voltage sensing terminal, the second conductive pad and the fifth conductive pad are used as current source input/output terminals, and the third conductive pad is electrically connected to the sixth conductive pad as a second voltage sensing terminal.
8. The vertical hall magnetic field sensing device of claim 1, wherein the current blocking layer is a p+ guard ring structure.
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