CN116544133A - Method for detecting wafer line position of wafer rod - Google Patents
Method for detecting wafer line position of wafer rod Download PDFInfo
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- CN116544133A CN116544133A CN202210095646.7A CN202210095646A CN116544133A CN 116544133 A CN116544133 A CN 116544133A CN 202210095646 A CN202210095646 A CN 202210095646A CN 116544133 A CN116544133 A CN 116544133A
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 98
- 238000005259 measurement Methods 0.000 claims description 11
- 238000001514 detection method Methods 0.000 abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a method for detecting the position of a wafer line of a wafer rod, which comprises the following steps: any two diameter surfaces at different positions are taken on the outer wall surface of the wafer rod; controlling the wafer rod to axially rotate and identifying all crystal line points on two different position diameter surfaces; obtaining a measured value of an included angle of each group of alignment crystal line points in each diametral plane relative to the circle center of the diametral plane; comparing the measured values of the angles of the included angles of the alignment crystal line points at the same positions on two groups of different diametral planes relative to the circle centers of the diametral planes, and judging whether the absolute values of the differences of the angles of the included angles of the alignment crystal line points at all the same positions on the two groups of different diametral planes relative to the circle centers of the diametral planes are within the standard value range. The invention can rapidly capture the positions of four crystal line points on the same diameter surface, calculate the included angle of the crystal line at the relative position and the included angle of any adjacent crystal line, has high accuracy and high detection efficiency, shortens the detection time and has good reproducibility.
Description
Technical Field
The invention belongs to the technical field of single crystal bar crystal line detection, and particularly relates to a method for detecting the position of a crystal line of a wafer bar.
Background
The existing detection of the wafer bar crystal line is manual visual inspection and observation, whether the broken edge or the crystal line deformation exists or not is judged, and as to whether the crystal line angle of the relative position and the adjacent crystal line angle are in a standard range or not, no practical better detection method exists. And the distribution of the crystal line positions of the wafer rods directly influences the processing quality of the silicon wafer, once the crystal line angle of the wafer rods does not meet the standard requirement, the whole silicon rod is rejected, the diagonal size of the monocrystalline silicon wafer processed later is also disqualified, and the conversion efficiency of the solar cell is also disqualified.
Disclosure of Invention
The invention provides a method for detecting the positions of crystal lines of a wafer rod, which solves the technical problem of how to quickly and accurately judge whether the included angle of the crystal lines at the relative positions meets the standard.
In order to solve at least one of the technical problems, the invention adopts the following technical scheme:
the method for detecting the wafer line position of the wafer rod comprises the following steps:
any two diameter surfaces at different positions are taken on the outer wall surface of the wafer rod;
controlling the wafer rod to axially rotate and identifying all crystal line points on two different position diameter surfaces;
obtaining a measured value of an included angle of each group of alignment crystal line points in each diametral plane relative to the circle center of the diametral plane;
comparing the measured values of the angles of the included angles of the alignment crystal line points at the same positions on two groups of different diametral planes relative to the circle centers of the diametral planes, and judging whether the absolute values of the differences of the angles of the included angles of the alignment crystal line points at all the same positions on the two groups of different diametral planes relative to the circle centers of the diametral planes are within the standard value range.
Further, when the absolute value of the difference value of the included angles of the wafer line points in all the groups on the two diametral planes is not larger than the standard value, the positions of the wafer lines on the wafer rods are qualified.
Further, when the absolute value of the difference value of the included angle angles of any group of wafer line points arranged in alignment on the two diameter surfaces is larger than the standard value, the position of the wafer line on the wafer rod is unqualified.
Further, the standard value is in a range of not more than 2 °.
Further, the diameter surfaces at two different positions are respectively arranged near two ends of the length of the wafer rod and symmetrically arranged relative to the length of the wafer rod.
Further, the distances between the diameter surfaces at two different positions and the corresponding end parts of the wafer rods are 5-20mm respectively.
Further, when all the wafer line points on the two different position diameter surfaces are identified, the two diameter surfaces of the wafer rod are synchronously identified on the same side of the wafer rod.
Further, the wafer rod rotates at a uniform speed in the horizontal axial direction, and the rotating speed is 15-30mm/min.
Further, the specific steps of obtaining the diameter measurement value of any diameter surface and the measurement value of any group of alignment line point included angle angles on the diameter surface include:
setting a crystal line point at which the same crystal line intersects with two diametral planes as a starting point of each diametral plane;
controlling the wafer rod to axially rotate for a plurality of circles within the same time, and recording the rotating speed and the rotating time of the wafer rod;
identifying the crystal line points on each diameter surface based on the rotating speed and the rotating time of the wafer rod, and obtaining the rotating angles of all the crystal line points on the diameter surface relative to the starting point and the starting point;
the difference between the rotation angles of each group of oppositely arranged crystal line points on each diameter surface is the measurement value of the included angle of the group of oppositely arranged crystal line points on the circumference of the diameter surface relative to the circle center of the diameter surface.
Further, the step of comparing the measured values of the included angle of the alignment line point on the same position on the two groups of different diametral planes relative to the circle center of the diametral plane includes:
and determining the difference value of the included angle of a group of crystal line points corresponding to the same position on the two diametral planes relative to the circle center of the diametral plane based on the measured value of the included angle of each group of crystal line points corresponding to the circle center of the diametral plane, so as to obtain the difference value of the included angle of a plurality of groups of crystal line points corresponding to the diametral plane.
Further, the wafer bar is provided with four crystal lines, and each diameter surface is provided with two groups of crystal line points which are arranged in an alignment mode.
The method for detecting the wafer line position of the wafer rod can rapidly capture the positions of four wafer line points on the same diameter surface, calculate the included angle of the wafer line at the relative position and the included angle of any adjacent wafer line, has high accuracy and high detection efficiency, shortens the detection time and has good reproducibility.
Drawings
FIG. 1 is a front view of a wafer bar wafer line position inspection apparatus according to an embodiment of the present invention;
FIG. 2 is a top view of a wafer bar wafer line position inspection apparatus according to one embodiment of the present invention;
FIG. 3 is a schematic view of the angles between the positions of the crystal line points on the first radial surface according to an embodiment of the present invention;
FIG. 4 is a schematic view of the angles between the point locations of the crystal lines on the second radial surface according to an embodiment of the present invention.
In the figure:
10. wafer bar 11, diameter surface one 12 and diameter surface two
20. Track 30, top shaft 40, clamping member one
50. Clamping piece II 60, detecting piece I70 and detecting piece II
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples.
The embodiment provides a method for detecting the position of a wafer bar crystal line, as shown in fig. 1-2, comprising the following steps:
s1, taking two diameter surfaces at any different positions on the outer wall surface of the wafer rod 10.
The horizontally placed wafer rod 10 is jacked up by the jacking shaft 30 on the track 20 and can axially rotate under the drive of the jacking shaft 30; two clamping pieces are arranged along the length direction of the wafer rod 10 and used as manipulators to clamp the wafer rod 10 and placed on the track 20, the clamping pieces can also be used as manipulators to move the wafer rod 10, the clamping pieces are respectively a first clamping piece 40 and a second clamping piece 50, two laser detection pieces 60 and a second detection piece 70 are respectively arranged on the same side face of the first clamping piece 40 and the same side face of the second clamping piece 50, the first detection piece 60 and the second detection piece 70 are both perpendicular to the axis of the wafer rod 10 and are arranged at the same height as the central axis of the wafer rod 10, the positions of the wafer rod 10 corresponding to the first detection piece 60 and the second detection piece 70 are a first diameter face 11 and a second diameter face 12, and the first detection piece 60 and the second detection piece 70 are respectively arranged close to two end parts of the wafer rod 10 and are symmetrically arranged relative to the length of the wafer rod 10. The first detecting element 60 and the second detecting element 70 are respectively used for measuring the position angles of the wafer line points in the first diameter surface 11 and the second diameter surface 12 corresponding to the first detecting element and the second detecting element so as to judge whether the positions of the wafer lines in the wafer rod 10 are qualified or not.
In this embodiment, the wafer bar 10 has four wires, i.e. two sets of wires are aligned, and the intersection points of the four wires with the first diameter surface 11 and the second diameter surface 12 are four wire points.
The closer the two diameter surfaces are to the ends of the two ends of the wafer rod 10, the more truly the effect of the uniformity of the drawing of the wafer wire, and if the two diameter surfaces are too close, the change angle cannot reflect the position change of the whole length. Preferably, the distance from the first diameter surface 11 and the second diameter surface 12 at two different positions to the corresponding ends of the wafer rod 10 is 5-20mm.
S2, controlling the wafer rod 10 to axially rotate and identifying all crystal line points on the two different position diameter surfaces.
The top shaft 30 is controlled to control the horizontal axial rotation of the wafer rod 10, and when the wafer rod 10 rotates, the clamping piece one 40 and the clamping piece two 50 have a certain gap with the outer wall surface of the wafer rod 10. The first detecting element 60 and the second detecting element 70 are in contact with the outer wall surface of the wafer rod 10 in the same direction and synchronously, and the probe is easy to identify and obtain the position because the wafer wire and the outer wall surface of the wafer rod 10 have a certain bulge.
Further, the wafer rod 10 rotates at a uniform speed in the horizontal axial direction, and the rotating speed is 15-30mm/min.
S3, obtaining a measured value of an included angle of each group of alignment crystal line points in each diametral plane relative to the circle center of the diametral plane.
One wafer line on the wafer bar 10 is firstly selected as a starting wafer line, and then the intersection point of the wafer line and the first and second diameter surfaces 11 and 12 is used as the starting point of two diameter surface measurements.
The wafer rod 10 is controlled to axially rotate for a plurality of circles within the same time, the rotation speed and the rotation time of the wafer rod 10 are recorded, and the number of rotations is recorded, so that the circumference of the wafer rod 10 can be obtained after one rotation, and the diameter d of the wafer rod 10 can be obtained.
And based on the rotation speed and rotation time of the wafer rod 10, the rotation times of the crystal line points on each diameter surface are identified, and the rotation angles of all the crystal line points on the diameter surface relative to the starting point are obtained.
The rotation angle of all the wafer points on each diameter surface with respect to the starting point on the diameter surface is determined based on the rotation speed of the wafer rod 10 and the time when the wafer line where the wafer points are located is identified to rotate for one circle, so that the circumference length of the circle of the starting wafer point in the diameter surface and the arc length of all other wafer points rotating with respect to the starting point can be obtained.
Based on the circumferential length of one revolution of the starting wafer line point in each diametral plane, the size of the diametral plane can be projected into the corresponding cross section, and the diameter size can be determined. Based on the diameter of each diametral plane and the arc length of all crystal line points on the diametral plane relative to the starting point, the rotation angle of any crystal line point on the diametral plane relative to the starting point can be obtained in the same projection cross section. Then, the difference of the rotation angles of each group of oppositely arranged crystal line points on each diameter surface is the measurement value of the included angle of the group of oppositely arranged crystal line points on the circumference of the diameter surface relative to the circle center of the diameter surface.
As shown in fig. 3-4, the first detecting element 60 and the second detecting element 70 respectively scan and identify the first radial surface 11 and the second radial surface 12, the projection of the identified cross sections is shown in fig. 3 and 4 respectively, on the first radial surface 11 and the second radial surface 12, the cross section circles are projected, and the intersection points of the four crystal lines and the first radial surface 11 are respectively crystal line points A1, B1, C1 and D1; the intersection points with the second diameter surface 12 are crystal line points A2, B2, C2 and D2, respectively. And selecting the points A1 and A2 of the same crystal line and the intersected crystal line from the first diameter surface 11 and the second diameter surface 12 as initial crystal line points of the two diameter surfaces.
Diameters D1 and D2 corresponding to the first diameter surface 11 and the second diameter surface 12 can be obtained through the first detecting member 60 and the second detecting member 70 respectively, and then the rotation angles theta 1, theta 2 and theta 3 of the other three crystal line points B1, C1 and D1 on the first diameter surface 11 and the rotation angles theta 4, theta 5 and theta 6 of the other three crystal line points B2, C2 and D2 on the second diameter surface 12 relative to the point A2 can be obtained respectively based on the rotation speed of the wafer rod 10 and the time and the number of times each crystal line point is identified; each rotation angle is then an angular measurement of the corresponding line point on the diametral plane relative to the starting line point.
S4, comparing the measured values of the included angle of the alignment line points at the same position on the two groups of different diametral planes relative to the circle center of the diametral plane, and judging whether the difference is in the standard range.
And determining the included angle of a group of crystal line points which are oppositely arranged on the same position on the two diametral surfaces relative to the circle center of the diametral surface based on the measured value of the included angle of each group of crystal line points which are oppositely arranged on each diametral surface relative to the circle center of the diametral surface. And then calculating the difference value of the included angle of the crystal line points which are arranged in the same group on the two diametral planes in a contraposition way relative to the circle center of the diametral planes, and further obtaining the difference value of the included angle of the crystal line points which are arranged in the two groups in the contraposition way.
Specifically, for the first diameter surface 11, a measured value of a rotation angle, that is, an included angle, between crystal line points A1C1 arranged in alignment with respect to the center O1 of the diameter surface is θ2; the rotation angle between the crystal line points B1D1 arranged in alignment relative to the center O1 of the diametral plane, namely the measurement value of the included angle is theta 3-theta 1.
For the second diametral plane 12, the rotation angle between the crystal line points A2C2 arranged in alignment relative to the circle center O2 of the diametral plane, namely the measurement value of the included angle is theta 5; the rotation angle between the crystal line points B2D2 arranged in alignment relative to the center O2 of the diametral plane, namely the measurement value of the included angle is theta 6-theta 4.
Then, the difference value of the included angle between the crystal line points A1C1 and A2C2 which are arranged in the same alignment in the first diameter surface 11 and the second diameter surface 12 is theta 5-theta 2; the difference of the included angles between the crystal line points B1D1 and B2D2 which are arranged in the same alignment in the first diameter surface 11 and the second diameter surface 12 is (theta 6-theta 4) - (theta 3-theta 1).
Further, when the absolute value of the difference between the angles of the two sets of alignment-arranged crystal line points on the two diametral planes is not greater than 2 °, that is, when the absolute value of the difference between the angles of the crystal line points A1C1 and A2C2 on the diametral plane 11 and the diametral plane 12, which are arranged in the same alignment, is not greater than 2 °, the absolute value of the difference between the angles of the crystal line points B1D1 and B2D2 on the diametral plane 11 and the diametral plane 12, which are arranged in the same alignment, is not greater than 2 °, the absolute value of the difference between the angles of the crystal line points (θ6- θ4) - (θ3- θ1) is not greater than 2 °, that is, the positions of the crystal lines on the crystal line bar 10 are not changed, that is, the consistency of the positions of the crystal lines is good, the crystal lattice positions are stable, and the quality meets the standard requirements.
Further, when the absolute value of the difference value of the included angle angles of any group of alignment-arranged crystal line points on the two diametral planes is larger than 2 degrees, that is, when the absolute value of the difference value of the included angle angles between crystal line points A1C1 and A2C2 which are arranged in the same alignment in the diametral plane I11 and the diametral plane II 12 is larger than 2 degrees, |θ5- θ2| > 2 degrees; or absolute values of differences of angles of included angles between crystal line points B1D1 and B2D2 which are arranged in the same alignment in the first radial surface 11 and the second radial surface 12 (theta 6-theta 4) - (theta 3-theta 1) | are larger than 2 degrees; or, absolute value of difference value of angle between crystal line points A1C1 and A2C2 which are arranged in the same alignment in the first radial surface 11 and the second radial surface 12 is [ theta ] 5-theta ] 2 [ theta ] and absolute value of difference value of angle between crystal line points B1D1 and B2D2 which are arranged in the same alignment in the first radial surface 11 and the second radial surface 12 is [ theta ] 6-theta 4) - (theta 3-theta 1 ] 2; if the difference of the included angle between the crystal line points arranged in a group of alignment is not qualified or the difference of the included angle between the crystal line points arranged in all groups of alignment is not qualified, the position of the crystal line on the wafer rod 10 is not qualified, which indicates that the distortion of the crystal line is large in change amplitude and abnormal in quality, and the whole wafer rod 10 cannot be used.
The method for detecting the wafer line position of the wafer rod can rapidly capture the positions of four wafer line points on the same diameter surface, calculate the included angle of the wafer line at the relative position and the included angle of any adjacent wafer line, has high accuracy and high detection efficiency, has the accuracy of 98 percent, greatly shortens the detection time and has good reproducibility.
The foregoing detailed description of the embodiments of the invention has been presented only to illustrate the preferred embodiments of the invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (11)
1. The method for detecting the wafer line position of the wafer rod is characterized by comprising the following steps:
any two diameter surfaces at different positions are taken on the outer wall surface of the wafer rod;
controlling the wafer rod to axially rotate and identifying all crystal line points on two different position diameter surfaces;
obtaining a measured value of an included angle of each group of alignment crystal line points in each diametral plane relative to the circle center of the diametral plane;
comparing the measured values of the angles of the included angles of the alignment crystal line points at the same positions on two groups of different diametral planes relative to the circle centers of the diametral planes, and judging whether the absolute values of the differences of the angles of the included angles of the alignment crystal line points at all the same positions on the two groups of different diametral planes relative to the circle centers of the diametral planes are within the standard value range.
2. The method for detecting the positions of the crystal lines of the wafer bars according to claim 1, wherein the positions of the crystal lines on the wafer bars are qualified when absolute values of differences of angles of included angles of crystal lines points which are arranged in alignment in all groups on two diametral planes are not larger than standard values.
3. The method for detecting the position of a wafer bar according to claim 1, wherein when the absolute value of the difference of the angles of included angles of any group of aligned wafer points on two diameter surfaces is larger than a standard value, the position of the wafer bar is not qualified.
4. A method for detecting the position of a wafer bar crystal line according to any one of claims 1 to 3, wherein the standard value is in a range of not more than 2 °.
5. The method for detecting the position of a wafer bar according to claim 1, wherein the diameter surfaces of the two different positions are respectively disposed near two ends of the length of the wafer bar and symmetrically disposed with respect to the length of the wafer bar.
6. The method for detecting the positions of a wafer bar according to claim 5, wherein the distances between the diameter surfaces at two different positions and the corresponding ends of the wafer bar are 5-20mm.
7. The method for detecting the positions of the wafer bars according to any one of claims 1 to 3 and 5 to 6, wherein when all the wafer points on the two different positions of the diameter surfaces are identified, the two diameter surfaces of the wafer bars are identified simultaneously on the same side of the wafer bars.
8. The method for detecting the position of a wafer bar according to claim 7, wherein the wafer bar rotates at a uniform speed in a horizontal axis direction, and the rotation speed is 15-30mm/min.
9. The method for detecting a wafer line position of a wafer bar according to any one of claims 1 to 3, 5 to 6, 8, wherein the steps of obtaining a diameter measurement value of any one of the diameter surfaces and a measurement value of any one of a set of angles between aligned line points on the diameter surface comprise:
setting a crystal line point at which the same crystal line intersects with two diametral planes as a starting point of each diametral plane;
controlling the wafer rod to axially rotate for a plurality of circles within the same time, and recording the rotating speed and the rotating time of the wafer rod;
identifying the crystal line points on each diameter surface based on the rotating speed and the rotating time of the wafer rod, and obtaining the rotating angles of all the crystal line points on the diameter surface relative to the starting point and the starting point; the difference between the rotation angles of each group of oppositely arranged crystal line points on each diameter surface is the measurement value of the included angle of the group of oppositely arranged crystal line points on the circumference of the diameter surface relative to the circle center of the diameter surface.
10. The method for detecting the position of a crystal line of a wafer bar according to claim 9, wherein the comparing the measured values of the included angle of the alignment line point at the same position on two different sets of diameter surfaces with respect to the center of the diameter surface comprises:
and determining the difference value of the included angle of a group of crystal line points corresponding to the same position on the two diametral planes relative to the circle center of the diametral plane based on the measured value of the included angle of each group of crystal line points corresponding to the circle center of the diametral plane, so as to obtain the difference value of the included angle of a plurality of groups of crystal line points corresponding to the diametral plane.
11. The method for detecting the positions of wafer lines of any one of claims 1 to 3, 5 to 6, 8 and 10, wherein the wafer bar has four wafer lines, and each diameter surface has two sets of wafer line points arranged in alignment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210095646.7A CN116544133A (en) | 2022-01-26 | 2022-01-26 | Method for detecting wafer line position of wafer rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210095646.7A CN116544133A (en) | 2022-01-26 | 2022-01-26 | Method for detecting wafer line position of wafer rod |
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| Publication Number | Publication Date |
|---|---|
| CN116544133A true CN116544133A (en) | 2023-08-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210095646.7A Pending CN116544133A (en) | 2022-01-26 | 2022-01-26 | Method for detecting wafer line position of wafer rod |
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| Country | Link |
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| CN (1) | CN116544133A (en) |
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2022
- 2022-01-26 CN CN202210095646.7A patent/CN116544133A/en active Pending
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