CN116516468A - Device and method for simultaneously treating multiple silicon carbide seed crystal coatings - Google Patents
Device and method for simultaneously treating multiple silicon carbide seed crystal coatings Download PDFInfo
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- CN116516468A CN116516468A CN202310806850.XA CN202310806850A CN116516468A CN 116516468 A CN116516468 A CN 116516468A CN 202310806850 A CN202310806850 A CN 202310806850A CN 116516468 A CN116516468 A CN 116516468A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 67
- 230000008093 supporting effect Effects 0.000 claims abstract description 67
- 230000007246 mechanism Effects 0.000 claims abstract description 49
- 239000011248 coating agent Substances 0.000 claims abstract description 28
- 230000004308 accommodation Effects 0.000 claims abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 105
- 239000010439 graphite Substances 0.000 claims description 105
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 103
- 241000721671 Ludwigia Species 0.000 claims description 25
- 239000011261 inert gas Substances 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 17
- 238000005086 pumping Methods 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 5
- 238000004321 preservation Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 claims 3
- 239000010410 layer Substances 0.000 claims 2
- 238000005452 bending Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 124
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- 229910052786 argon Inorganic materials 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
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- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/14—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating or cooling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
- B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0466—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a non-reacting gas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0493—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases using vacuum
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the technical field of semiconductors, in particular to a device and a method for simultaneously processing a plurality of silicon carbide seed crystal coatings, wherein the device comprises a heating mechanism and a seed crystal placing mechanism, and the heating mechanism is provided with a containing cavity; the seed crystal placing mechanism is detachably placed in the accommodating cavity; the seed crystal placing mechanism comprises a plurality of seed crystal boxes which are detachably and sequentially overlapped; the seed crystal box comprises a chassis, a backing ring and a supporting frame, wherein the backing ring is arranged on the upper surface of the chassis, extends around the circumference of the chassis, forms an accommodating space between the inner peripheral wall of the backing ring and the upper surface of the chassis, and is used for placing wafers; the support frame is connected with the chassis and is located accommodation space, and the support frame is used for supporting the wafer, and the support frame divides accommodation space into the inflation chamber. The device disclosed by the invention can be used for treating the silicon carbide seed crystal coating, can improve the adhesion quality and strength of the coating, and reduces the generation of cracks.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a device and a method for simultaneously processing a plurality of silicon carbide seed crystal coatings.
Background
Silicon carbide single crystal is one of the most important third-generation semiconductor materials at present, and is widely applied to the fields of power electronics, radio frequency devices, optoelectronic devices and the like due to the excellent performances of large forbidden bandwidth, high thermal conductivity, high breakdown field intensity, high saturated electron mobility and the like. The silicon carbide single crystal growth mode of the related art generally adopts a Physical Vapor Transport (PVT) method, which sublimates a silicon carbide raw material at a high temperature, and the generated vapor phase component is delivered to the surface of seed crystal growth for recrystallization generation; the back surface of the growth surface of the SiC crystal has the sublimation problem in the high-temperature process, and the bonding quality of the SiC seed crystal can be improved by coating the back surface of the seed crystal with a film in the related technology.
However, the seed coating treatment apparatus and method provided in the related art have difficulty in improving the adhesion quality and strength of the coating, and are prone to cracking.
Disclosure of Invention
The invention aims to provide a device and a method for simultaneously processing a plurality of silicon carbide seed crystal coatings, which can be used for processing the silicon carbide seed crystal coatings, can improve the adhesion quality and strength of the coatings and reduce the generation of cracks.
Embodiments of the present invention are implemented as follows:
in a first aspect, the present invention provides an apparatus for simultaneous processing of multiple silicon carbide seed coatings, comprising:
the heating mechanism is provided with a containing cavity;
the seed crystal placing mechanism is detachably placed in the accommodating cavity; wherein,,
the seed crystal placing mechanism comprises a plurality of seed crystal boxes which are detachably and sequentially overlapped;
the seed crystal box comprises a chassis, a backing ring and a supporting frame, wherein the backing ring is arranged on the upper surface of the chassis, extends around the circumference of the chassis, forms an accommodating space between the inner peripheral wall of the backing ring and the upper surface of the chassis, and is used for placing wafers; the support frame is connected with the chassis and is located accommodation space, and the support frame is used for supporting the wafer, and the support frame divides accommodation space into the inflation chamber.
In an alternative embodiment, the support frame comprises a support ring, a first support rod and a second support rod, wherein the first support rod and the second support rod are crossed and connected, and both ends of the first support rod and both ends of the second support rod are connected with the inner peripheral wall of the backing ring; the intersection point of the first support rod and the second support rod, the circle center of the backing ring and the circle center of the support ring are overlapped, the support ring is connected with the first support rod and the second support rod at the same time, and the support ring, the first support rod and the second support rod are jointly used for dividing the accommodating space into a plurality of air inflation cavities.
In an alternative embodiment, the ratio of the diameter of the support ring to the diameter of the backing ring is 0.55-0.65.
In an alternative embodiment, the support frame further comprises a third support bar connected between the support ring and the backing ring and positioned within the plenum chamber for supporting the wafer.
In an alternative embodiment, the third support bar is a bent bar.
In an alternative embodiment, the seed box further comprises an outer rim attached to the base plate, the outer rim surrounding the outer periphery of the backing ring, the outer rim having a height greater than the height of the backing ring, and the outer rim being configured to be in gap distribution with a wafer placed on the backing ring.
In an alternative embodiment, the grommet is removably disposed on the upper surface of the chassis.
In an alternative embodiment, the heating mechanism comprises a shell, a graphite crucible, a heat preservation layer, a heating piece, an air inlet pipe and an air outlet pipe; the graphite crucible is provided with a containing cavity, the graphite crucible is arranged in the shell, and the heating element is arranged at the outer side of the graphite crucible; the heat preservation layer is arranged between the heating element and the shell; the air inlet pipe and the air outlet pipe are both connected with the shell and are both communicated with the accommodating cavity, the air inlet pipe is used for conveying inert gas into the accommodating cavity, and the air outlet pipe is used for extracting the gas in the accommodating cavity;
the heating element is a heating resistor or an induction heating coil.
In an alternative embodiment, the seed crystal placement mechanism further comprises a graphite rod, a first graphite tray, a second graphite tray, a locking member and a graphite soft felt column,
the first end of the graphite rod is connected with the second graphite tray, the second end of the graphite rod is spliced with the first graphite tray, the second end of the graphite rod extends out from one side of the first graphite tray, which is away from the second graphite tray, and the locking piece is detachably connected with the second end of the graphite rod;
a plurality of seed crystal boxes which are sequentially overlapped are arranged between the first graphite tray and the second graphite tray;
the soft felt column of graphite is connected in the first graphite tray one side that deviates from the second graphite tray.
In a second aspect, the present invention provides a method of simultaneous treatment of a plurality of silicon carbide seed coatings, the method comprising treating a silicon carbide seed with an apparatus of any of the preceding embodiments;
the method for simultaneously treating a plurality of silicon carbide seed crystal coatings comprises the following steps:
sectionally vacuumizing the accommodating cavity; wherein, the accommodating cavity is vacuumized at the speed of 13.5-16.5kPa/h until the air pressure in the accommodating cavity is 6000Pa; then vacuumizing the accommodating cavity at the speed of 1.8-2.2kPa/h until the air pressure in the accommodating cavity is less than 100Pa;
injecting inert gas into the accommodating cavity until the air pressure in the accommodating cavity reaches 100000Pa, and vacuumizing the accommodating cavity again;
heating the accommodating cavity, introducing inert gas into the accommodating cavity according to the gas transmission rate of 0.1-0.3L/h, and simultaneously pumping out the gas in the accommodating cavity to keep the gas pressure in the accommodating cavity at 21-40000Pa; when the temperature of the accommodating cavity is heated to 400-1600 ℃, the accommodating cavity is kept for 2-5h.
The device for simultaneously processing the silicon carbide seed crystal coatings has the beneficial effects that: the device for simultaneously processing the silicon carbide seed crystal coatings comprises a heating mechanism and a seed crystal placing mechanism, wherein the seed crystal placing mechanism is placed in a containing cavity arranged by the heating mechanism and comprises a plurality of seed crystal boxes which are detachably and sequentially overlapped, and the seed crystal boxes are used for placing wafers; the upper surface of the chassis of the seed crystal box is provided with a backing ring, the backing ring is used for placing a wafer, and as the backing ring extends around the circumferential direction of the chassis and an accommodating space is formed between the inner circumferential wall of the backing ring and the upper surface of the chassis, the contact area between the wafer and the seed crystal box can be reduced, the possibility that the C surface of the wafer is polluted can be reduced as the C surface of the wafer is not contacted with the seed crystal box, the contact between the wafer and the seed crystal box is reduced, the problem that unexpected stress is generated on the wafer due to the fact that the expansion coefficients of the wafer and the seed crystal box are different can be solved, and the problem that the wafer is easily damaged due to unexpected stress is solved; further, the supporting frame is arranged in the accommodating space, and the supporting frame is used for supporting the wafer in an auxiliary mode, so that the problems of cracking and breakage caused by the increase of deformation due to the dual functions of self gravity and external pressure can be solved under the condition that the wafer is pressed; still further, the gas filling cavity that the support frame divided the accommodation space can be used for filling inert gas to utilize the inert gas that fills in the gas filling cavity to resist the gravity of wafer self, and then further improve the easy deformation of wafer and lead to the problem of damage, split.
The method for simultaneously processing the silicon carbide seed crystal coatings has the beneficial effects that: in the method, when the early stage vacuumizing is adopted, the vacuumizing speed of the accommodating cavity is controlled to be fast and then slow in a segmented vacuumizing mode, so that the pressure in the accommodating cavity is reduced slowly in the early stage of vacuumizing, the risk of easy cracking of a wafer during vacuumizing is improved, and the effects of vacuumizing, cleaning the wafer and the seed crystal box and reducing impurities attached to the surfaces of the wafer and the seed crystal box are improved; further, inert gas is supplemented in the accommodating cavity during heating, so that the wafer in the accommodating cavity is heated under a certain pressure condition, on one hand, the situation of cracking is improved, on the other hand, the adhesive capacity and strength of the coating are improved, the probability that the coating is separated from the wafer is reduced, and the generation of bubbles of the coating is reduced, so that the cracking is further reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of an apparatus for simultaneous treatment of multiple silicon carbide seed coatings in accordance with example 1 of the present invention;
FIG. 2 is a schematic view showing the structure of a seed crystal placement mechanism according to embodiment 1 of the present invention;
FIG. 3 is a schematic view showing the structure of a seed box according to embodiment 1 of the present invention;
FIG. 4 is a schematic view of a structure of a seed box according to some embodiments of the present invention;
FIG. 5 is a schematic view showing the peeling of a coating on the surface of a wafer in comparative example 1 of the present invention;
FIG. 6 is a schematic illustration of a wafer fragment in comparative example 1 of the present invention;
fig. 7 is a schematic illustration of an uncracked wafer of example 1 of the present invention.
Icon: 010-a device for simultaneously processing a plurality of silicon carbide seed crystal coatings; 100-heating mechanism; 110-a housing; 111-a housing; 112-cover; 120-graphite crucible; 130-an insulating layer; 140-heating element; 150-an air inlet pipe; 160-an air outlet pipe; 200-a seed crystal placement mechanism; 210-a seed box; 211-chassis; 212-backing ring; 213-supporting frames; 214-inflating the cavity; 215-a support ring; 216-a first support bar; 217-a second support bar; 218-a third support bar; 219-outer edge; 220-graphite rod; 230-a first graphite tray; 240-a second graphite tray; 250-locking piece; 260-graphite soft felt column.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "upper", "lower", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in use, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed", "connected" and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Example 1
Referring to fig. 1, the present embodiment provides an apparatus 010 for simultaneously processing a plurality of silicon carbide seed crystal coatings, which includes a heating mechanism 100 and a seed crystal placement mechanism 200; the heating mechanism 100 includes a receiving cavity; the seed crystal placing mechanism 200 is detachably placed in the accommodating cavity; wherein the seed crystal placing mechanism 200 is used for placing a wafer to be processed, namely the seed crystal placing mechanism 200 is used for placing a wafer with a coating to be solidified. In this way, the wafer to be processed is placed in the seed crystal placing mechanism 200, and then the seed crystal placing mechanism 200 is assembled in the accommodating cavity, so that the wafer placed in the seed crystal placing mechanism 200 can be heated by the heating mechanism 100, and the coating on the wafer is heated and solidified.
It should be noted that the coating on the wafer may be a carbon paste coating, which is not particularly limited herein.
The structure of the heating mechanism 100 may be set as required; in this embodiment, the heating mechanism 100 includes a housing 110, a graphite crucible 120, an insulating layer 130, a heating member 140, an air inlet pipe 150, and an air outlet pipe 160; the graphite crucible 120 is provided with a receiving cavity; the graphite crucible 120 is arranged in the shell 110, the heating element 140 is arranged at the outer side of the graphite crucible 120, the heat preservation layer 130 is arranged between the heating element 140 and the shell 110, namely, the graphite crucible 120, the heating element 140, the heat preservation layer 130 and the shell 110 are sleeved in sequence from the inside to the outside; the air inlet pipe 150 and the air outlet pipe 160 are both connected with the shell 110 and are both communicated with the accommodating cavity, the air inlet pipe 150 is used for conveying inert gas into the accommodating cavity, and the air outlet pipe 160 is used for pumping out the gas in the accommodating cavity. When the seed crystal placing mechanism 200 in which the wafer is placed is disposed in the accommodating chamber of the graphite crucible 120, the graphite crucible 120 and the accommodating chamber may be heated by the heating member 140 so that the wafer placed in the seed crystal placing mechanism 200 is heated to cure the coating on the wafer; the heat-insulating layer 130 can reduce heat exchange of the graphite crucible 120, ensure that the graphite crucible 120 has a sufficiently high temperature to solidify the coating of the wafer, and the air inlet pipe 150 can be used for introducing inert gas for protection into the accommodating cavity, and can also be matched with the air outlet pipe 160 to adjust the air pressure in the accommodating cavity so as to heat the wafer under proper pressure, thereby ensuring the adhesion quality and strength of the coating.
Optionally, the casing 110 includes a casing 111 and a cover 112, where the graphite crucible 120, the heating element 140, the insulating layer 130, and the casing 111 are sleeved in sequence from inside to outside, the casing 111 is provided with a taking and placing port, and the cover 112 is detachably or movably connected with the casing 111 and is used for opening or closing the taking and placing port; the pick-and-place port is opposite to the opening of the accommodation chamber of the graphite crucible 120, and when the cover 112 is opened, the seed crystal placing mechanism 200 can be picked and placed in the accommodation chamber of the graphite crucible 120 through the pick-and-place port.
Further, the connection between the cover 112 and the housing 111 includes, but is not limited to, rotational connection, threaded connection, snap-fit connection, and lap-joint connection.
The heating member 140 is disposed on the graphite crucible in a similar manner to the related art, and will not be described herein. The heating member 140 may select a heating resistor or an induction heating coil as needed; the heating principle of the induction heating coil is that alternating current is generated, so that an alternating magnetic field is generated, and then eddy current is generated by using the alternating magnetic field to achieve the heating effect, the center of the coil has temperature, and the periphery of the coil is not heated, so that unidirectional heating is realized; the heating principle of the heating resistor is a method of performing electric heating by utilizing a thermal effect of an electric current passing through a resistor.
It should be noted that, in a preferred embodiment, the heating element 140 is a heating resistor, specifically may be a graphite heating element, and when heating, the center and the periphery are heated simultaneously, so that the center and the periphery have the same temperature, which belongs to bidirectional heating, and the problem of poor uniformity of a temperature field caused by induction heating can be improved, so as to realize accurate control of radial and axial temperature gradients, and improve the adhesion strength of a wafer coating.
The structure of the seed crystal placement mechanism 200 may be set as desired; referring to fig. 2, in the present embodiment, the seed crystal placement mechanism 200 includes a graphite rod 220, a first graphite tray 230, a second graphite tray 240, a locking member 250, a graphite felt column 260, and a plurality of seed crystal boxes 210; a plurality of seed boxes 210 are detachably placed in sequence in an overlapping manner; the first end of the graphite rod 220 is connected with the second graphite tray 240, the second end of the graphite rod 220 is spliced with the first graphite tray 230, the second end of the graphite rod 220 extends out from one side of the first graphite tray 230 away from the second graphite tray 240, and the locking piece 250 is detachably connected with the second end of the graphite rod 220; a plurality of seed boxes 210 placed one above the other in sequence are disposed between the first graphite tray 230 and the second graphite tray 240; graphite soft felt columns 260 are attached to a side of the first graphite tray 230 facing away from the second graphite tray 240.
When the wafer is placed on the seed crystal placing mechanism 200, the coating surface of the wafer is placed on the seed crystal box 210 upwards, and the C surface of the wafer is contacted with the seed crystal box 210; then sequentially overlapping the plurality of seed boxes 210 where the wafer is placed; the plurality of seed boxes 210 are stacked on the second graphite tray 240, the first ends of the graphite rods 220 are connected to the second graphite tray 240, the second ends of the graphite rods 220 are inserted into the first graphite tray 230, and the second ends of the graphite rods 220 are connected to the locking members 250. Thus, the seed crystal placing mechanism 200 with the wafer placed thereon can be integrally assembled and disassembled in the accommodating chamber, and the operability can be ensured. Moreover, when the heating member 140 heats the wafers placed on the seed crystal boxes 210, the graphite soft felt columns 260 provided on the side of the first graphite tray 230 facing away from the second graphite tray 240 can be heated simultaneously, and the graphite soft felt columns 260 provided on the first graphite tray 230 have a heat-retaining function because of poor heat dissipation properties of the graphite soft felt columns 260 themselves, so that the temperature loss at the upper end of the seed crystal placing mechanism 200 can be prevented, the uniformity of the temperature field of the seed crystal placing mechanism 200 in the height direction can be ensured, and the coatings of the wafers placed on the seed crystal boxes 210 of the seed crystal placing mechanism 200 can be reliably cured.
The number of graphite rods 220 may be set as desired; in this embodiment, the seed crystal placement mechanism 200 includes four graphite rods 220, and the four graphite rods 220 are sequentially spaced around the circumference of the second graphite tray 240; in this way, the plurality of seed boxes 210 disposed in an overlapping manner can be reliably disposed in the space defined by the four graphite rods 220, thereby ensuring the stability of the plurality of seed boxes 210 disposed in an overlapping manner between the first graphite tray 230 and the second graphite tray 240. Of course, in other embodiments, the number of graphite rods 220 may be two, three, six, etc., without limitation.
The connection manner of the graphite rod 220 and the second graphite tray 240 includes, but is not limited to, threaded connection, plugging, and clamping; the locking member 250 may be coupled to the graphite rod 220 by, but not limited to, a threaded connection or a snap fit.
Alternatively, in other embodiments, the graphite rod 220 may also be slidably inserted into the seed box 210, without limitation.
Referring to fig. 3, in the present embodiment, the seed box 210 includes a chassis 211, a backing ring 212 and a supporting frame 213, the backing ring 212 is disposed on an upper surface of the chassis 211, extends around a circumference of the chassis 211, forms a concave accommodating space between an inner peripheral wall of the backing ring 212 and the upper surface of the chassis 211, and the backing ring 212 is used for placing a wafer; the supporting frame 213 is connected to the chassis 211 and is located in the accommodating space, the supporting frame 213 is used for supporting the wafer, and the accommodating space is divided into an air charging cavity 214 by the supporting frame 213, and the air charging cavity 214 can be used for filling inert gas.
When the wafer is processed by the device 010 for simultaneously processing a plurality of silicon carbide seed crystal coatings, the coating surface of the wafer can be upwards placed on the seed crystal box 210, and the C surface of the wafer is contacted with the seed crystal box 210; multiple seed cassettes 210 are stacked one on top of the other, so that multiple wafers can be placed one on top of each seed cassette 210 for simultaneous processing of multiple wafers. The upper surface of the bottom plate 211 of the seed crystal box 210 is provided with a backing ring 212, the backing ring 212 is used for placing a wafer, and since the backing ring 212 extends around the circumferential direction of the bottom plate 211 and an accommodating space is formed between the inner circumferential wall of the backing ring 212 and the upper surface of the bottom plate 211, the contact area between the wafer and the seed crystal box 210 can be reduced, the possibility of pollution of the C surface can be reduced if the C surface of the wafer is not contacted with the seed crystal box 210, the contact between the wafer and the seed crystal box 210 can be reduced, the problem that unexpected stress is generated on the wafer due to the difference of expansion coefficients of the wafer and the seed crystal box 210 can be improved, and the problem that the wafer is easily damaged by unexpected stress is solved; further, the supporting frame 213 is arranged in the accommodating space, and the supporting frame 213 is used for supporting the wafer in an auxiliary manner, so that the problems of cracking and breakage caused by the increase of deformation due to the dual functions of self gravity and external pressure can be solved under the condition that the wafer is pressed; still further, the inflatable cavity 214 defined by the holding space by the supporting frame 213 can be used for filling inert gas, so that the inert gas filled in the inflatable cavity 214 is utilized to resist the gravity of the wafer, and further the problem that the wafer is easy to deform and damage and crack is further improved.
It should be noted that the seed box 210 may be made of graphite, i.e. the bottom plate 211, the backing ring 212 and the supporting frame 213 are all made of graphite, and the expansion coefficient of graphite is 2×10 -6 -5×10 -6 K; the wafer is a silicon carbide wafer having an expansion coefficient of 3×10 -6 -6×10 -6 /K。
Further, the seed box 210 further includes an outer rim 219 connected to the bottom plate 211, the outer rim 219 surrounds the outer periphery of the backing ring 212, the outer rim 219 has a height greater than the backing ring 212, and the outer rim 219 is configured to be in gap distribution with a wafer placed on the backing ring 212. In this way, even if the expansion coefficients of the seed box 210 and the wafer are different, the gap between the wafer and the outer edge 219 can be utilized in the heating and the cooling process after heating, so that the wafer is prevented from being extruded by the outer edge 219 due to the different expansion degrees of the seed box 210 and the wafer, and the problem of cracking caused by extrusion of the wafer is solved.
It should be noted that, the spacing between the wafer placed on the backing ring 212 and the outer edge 219 may be 0.2-0.3mm, for example: 0.2mm, 0.22mm, 0.25mm, 0.27mm, 0.30mm, etc., and are not particularly limited herein.
In this embodiment, both the rim 219 and the rim 212 are integrally formed with the chassis 211, and the rim 219 is also connected to the outer periphery of the rim 212. By this arrangement, the structural stability of the seed box 210 can be ensured, and the stability of placing the wafer in the seed box 210 can be ensured.
Of course, in other embodiments, the backing ring 212 is detachably connected to the chassis 211, and the connection manner includes, but is not limited to, plugging and clamping; in this way, the chassis 211 can be sized larger, for example: the size of the bottom plate 211 may be set to be larger than the SiC wafer having the largest diameter provided by the related art, and then the rim 212 having different sizes may be replaced according to the actual size of the wafer to be placed on the seed box 210, so that the seed box 210 has good versatility, and the seed boxes 210 having different sizes do not need to be produced for the wafers having different sizes, thereby being beneficial to reducing the manufacturing cost of the seed box 210.
Referring to fig. 3, in the present embodiment, the supporting frame 213 includes a supporting ring 215, a first supporting rod 216 and a second supporting rod 217, the first supporting rod 216 and the second supporting rod 217 are crossed and connected, and both ends of the first supporting rod 216 and both ends of the second supporting rod 217 are connected with the inner peripheral wall of the backing ring 212; the intersection point of the first supporting rod 216 and the second supporting rod 217, the center of the backing ring 212 and the center of the supporting ring 215 are coincident, the supporting ring 215 is connected with the first supporting rod 216 and the second supporting rod 217 at the same time, and the supporting ring 215, the first supporting rod 216 and the second supporting rod 217 are jointly used for dividing the containing space into a plurality of fan-shaped inflating cavities 214. So arranged, the wafer can be reliably supported in an auxiliary manner by using the support ring 215 and the first support rod 216 and the second support rod 217 which are crossed in a cross shape, so as to improve the problem of fracture caused by deformation of the wafer; moreover, the contact between the wafer and the seed box 210 is reduced, so that the problem that the C surface of the wafer is easy to pollute is solved.
Further, the first support bar 216 and the second support bar 217 vertically intersect. Of course, in other embodiments, the first support bar 216 and the second support bar 217 may also intersect non-perpendicularly.
The heights of the support ring 215, the first support rod 216 and the second support rod 217 may be selected as needed, for example: 3mm, 4mm, etc., are not particularly limited herein. The widths of the support ring 215, the first support bar 216 and the second support bar 217 may be selected as desired, for example: 1mm, 2mm, etc., are not particularly limited herein.
Still further, the ratio of the diameter D of the support ring 215 to the diameter D of the backing ring 212 is 0.55-0.65, for example: 0.55, 0.58, 0.60, 0.62, 0.64, 0.65, etc., are not particularly limited herein. Optimizing the diameter ratio of the support ring 215 and the backing ring 212 is beneficial to supporting the support ring 215 at a better position, further effectively resisting the problem of wafer deformation, optimizing the supporting effect and effectively improving the phenomenon that the wafer is easy to crack.
The thickness of the wafer is usually about 0.35-0.5mm, and the diameter ratio of the support ring 215 to the backing ring 212 is optimized, which is advantageous for reliably supporting an ultra-thin wafer.
Referring to fig. 4, in some embodiments, the support frame 213 further includes a third support rod 218, and the third support rod 218 is connected between the support ring 215 and the backing ring 212 and is located in the plenum 214 for supporting the wafer. Because the wafer is thinner, the phenomenon of cracking is more likely to occur at the edge of the wafer, particularly when the wafer is heated under pressure, the phenomenon of cracking is more likely to occur at the edge of the wafer, and when the coating is solidified, the heat conduction from the inside to the outside is asynchronous, the defect of bubbles is likely to occur at the outside, and the problem of cracking is also likely to occur; by providing the third support bar 218 in the plenum 214 to further assist in supporting the wafer, the plenum 214 can be divided into smaller areas to enhance the support of the wafer edge, while improving thermal diffusivity, improving heating uniformity, improving stress, reducing edge bubbles, and further improving the curing quality of the coating, reducing the occurrence of cracking.
It should be noted that the number of the third support bars 218 may be set as required, for example: one, two, three, four, etc., are not particularly limited herein.
It should be noted that, the third support rod 218 may also be made of graphite material, which may be integrally formed with the chassis 211, the support ring 215, and the backing ring 212; or removably placed on the chassis 211 and abutted against the support ring 215 and the backing ring 212, etc., without limitation.
Alternatively, the third support bar 218 may be a bent bar, for example: the support bar having an S shape, or the support bar having a fold line shape, etc., are not particularly limited herein. By this arrangement, the effect of support and heat diffusion can be improved.
The embodiment also provides a method for simultaneously processing a plurality of silicon carbide seed crystal coatings by using the device, which needs to purge the surface of the wafer and the seed crystal box 210 by inert gas before placing the wafer, so as to prevent other impurities from adhering to the surface of the wafer, further improve the problem that the impurities react with the seed crystal under the high-temperature condition, and improve the problem that the seed crystal is polluted.
The method for simultaneously treating a plurality of silicon carbide seed crystal coatings comprises the following steps: sectionally vacuumizing the accommodating cavity; wherein, the vacuum is pumped to the accommodating cavity for about 6h at the speed of 15kPa/h, so that the air pressure of the accommodating cavity is pumped from 100000Pa to 6000Pa, and then the vacuum is pumped to the accommodating cavity for about 3h at the speed of 2kPa/h, so that the air pressure of the accommodating cavity is pumped from 6000Pa to 20Pa. After the evacuation, inert gas is injected into the accommodating chamber, for example: argon, helium and the like until the air pressure in the accommodating cavity reaches 100000Pa, and vacuumizing the accommodating cavity again; optionally, the manner of this evacuation is similar to that of the earlier stage evacuation, and will not be described again. Therefore, the accommodating cavity is vacuumized, then filled with inert gas and vacuumized, and the cavity can be cleaned, so that other impurities can be taken away by the inert gas. Heating the accommodating cavity after vacuumizing again, and enabling the accommodating cavity to be in an inert gas environment; specifically, inert gas is introduced into the accommodating cavity according to the gas transmission rate of 0.2L/h, and the gas in the accommodating cavity is simultaneously pumped out, so that the gas pressure in the accommodating cavity is kept at 6000Pa; when the temperature of the receiving chamber was heated to 1000 ℃. The wafer cracking rate was about 3.6%.
Alternatively, in other embodiments, the first evacuation of the segmented evacuation is at a rate of 13.5-16.5kPa/h (e.g., 13.5kPa/h, 14kPa/h, 14.5kPa/h, 15kPa/h, 15.5kPa/h, 16kPa/h, 16.5kPa/h, etc.) the containment chamber is evacuated until the air pressure within the containment chamber is 6000Pa; the second vacuum is then applied to the receiving chamber at a rate of 1.8-2.2kPa/h (e.g., 1.8kPa/h, 2kPa/h, 2.2kPa/h, etc.) until the air pressure within the receiving chamber is less than 100Pa.
Alternatively, in other embodiments, inert gas may be introduced into the accommodating chamber at a gas delivery rate of 0.1-0.3L/h (e.g., 0.1L/h, 0.2L/h, 0.3L/h, etc.), while the gas in the accommodating chamber is withdrawn, so as to maintain the gas pressure in the accommodating chamber at 21-40000Pa (e.g., 21Pa, 50Pa, 1000Pa, 2000Pa, 3000Pa, 4000Pa, 5000Pa, 6000Pa, 10000Pa, 20000Pa, 30000Pa, 40000Pa, etc.); when the temperature of the accommodating chamber is heated to 400-1600 deg.C (e.g., 400 deg.C, 500 deg.C, 700 deg.C, 900 deg.C, 1100 deg.C, 1300 deg.C, 1500 deg.C, 1600 deg.C, etc.), the accommodating chamber is maintained for 2-5h (e.g., 2h, 3h, 4h, 5h, etc.).
In the early stage of vacuumizing, a segmented vacuumizing mode is adopted, and the vacuumizing speed of the accommodating cavity is controlled to be fast and slow, so that the pressure in the accommodating cavity is reduced slowly in the early stage of vacuumizing, the risk of easy cracking of a wafer in vacuumizing is improved, and the effects of vacuumizing, cleaning the wafer and the seed crystal box 210 and reducing impurities attached to the surfaces of the wafer and the seed crystal box are improved; further, inert gas is supplemented in the accommodating cavity during heating, so that the wafer in the accommodating cavity is heated under a certain pressure condition, on one hand, the situation of cracking is improved, on the other hand, the adhesive capacity and strength of the coating are improved, the probability that the coating is separated from the wafer is reduced, and the generation of bubbles of the coating is reduced, so that the cracking is further reduced.
Alternatively, upon heating, the temperature may be raised at a certain temperature raising rate, for example: heating to 1000 ℃ in 3 hours, heating to 2000 ℃ in 4 hours, and the like.
Optionally, after heating, the temperature may be slowly reduced, for example: the temperature is reduced to the room temperature (about 28 ℃) within about 16-24 hours, so that the problem of cracking caused by the hard thermal expansion and cold contraction of the wafer can be improved.
During the whole process of evacuating and filling inert gas into the wafer, the cover 112 is always connected to the housing 111, and closes the pick-and-place port, so that the accommodating chamber is in a closed environment, i.e., the seed crystal placing mechanism 200 and the wafer placed in the seed crystal placing mechanism 200 are in a closed environment.
Comparative example 1
The apparatus for simultaneous treatment of a plurality of silicon carbide seed coats employed in comparative example 1 did not connect a support frame for supporting a wafer to a chassis, and supported the wafer only with a backing ring provided at an edge of the chassis; the remainder of the procedure is as described in example 1.
In the comparative example 1, the supporting frame is not provided to assist in supporting the wafer, so that the middle part of the wafer cannot be heated by using the supporting frame to assist in heating, only the contact position of the edge of the wafer and the backing ring can be heated, the heating is uneven, the temperature of the edge of the wafer is high, the temperature of the middle part is low, the coating on the surface of the wafer is heated unevenly, the coating is easy to fall off (as shown in fig. 5), and even the wafer is cracked (as shown in fig. 6); the coating on the wafer surface of example 1 did not separate and the wafer did not crack (as shown in fig. 7).
Comparative example 2
Comparative example 2 wafers were also processed using the apparatus 010 for simultaneous processing of multiple silicon carbide seed coatings of example 1, with the exception of the parameters of the process recipe, which specifically included:
when the primary vacuumizing is performed, the sectional vacuumizing is not adopted, and the air pressure of the accommodating cavity is pumped from 100000Pa to 20Pa according to the speed of 15 kPa/h; for further process steps reference is made to example 1.
The wafer of comparative example 2 had a chipping rate of 7.3%.
Comparative example 3
Comparative example 3 wafers were also processed using the apparatus 010 for simultaneous processing of multiple silicon carbide seed coatings of example 1, with the exception of the parameters of the process recipe, which specifically included:
when the primary vacuumizing is performed, the sectional vacuumizing is not adopted, and the air pressure of the accommodating cavity is pumped from 100000Pa to 20Pa according to the speed of 2 kPa/h; for further process steps reference is made to example 1.
The wafer of comparative example 3 had a chipping rate of 5.1%.
Comparative example 4
Comparative example 4 the wafer was also processed using the apparatus 010 for simultaneous processing of multiple silicon carbide seed coatings of example 1, with the exception of the parameters of the process recipe, which specifically included:
when the primary vacuumizing is performed, the sectional vacuumizing is not adopted, and the air pressure of the accommodating cavity is pumped from 100000Pa to 20Pa according to the speed of 15 kPa/h; when heating, inert gas is not introduced into the accommodating cavity; for further process steps reference is made to example 1.
In comparative example 4, the wafer cracking rate was 7.8% because the sectional vacuum pumping was not performed, and the wafer was not protected by introducing inert gas in comparative example 4, and Si radicals of the wafer volatilized during heating, which adversely affected the molecular arrangement of the wafer, and the wafer quality was adversely affected.
In summary, the device 010 for simultaneously processing multiple silicon carbide seed crystal coatings can be used for processing the silicon carbide seed crystal coatings, can improve the adhesion quality and strength of the coatings, and can reduce the generation of cracks.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An apparatus for simultaneous processing of a plurality of silicon carbide seed coats, comprising:
a heating mechanism (100), the heating mechanism (100) being provided with a receiving cavity;
a seed crystal placement mechanism (200), the seed crystal placement mechanism (200) being detachably placed in the accommodation chamber; wherein,,
the seed crystal placing mechanism (200) comprises a plurality of seed crystal boxes (210), and the seed crystal boxes (210) are detachably and sequentially placed in an overlapping mode;
the seed crystal box (210) comprises a base plate (211), a backing ring (212) and a supporting frame (213), wherein the backing ring (212) is arranged on the upper surface of the base plate (211) and extends circumferentially around the base plate (211), an accommodating space is formed between the inner peripheral wall of the backing ring (212) and the upper surface of the base plate (211), and the backing ring (212) is used for placing a wafer; the supporting frame (213) is connected with the chassis (211) and is located in the accommodating space, the supporting frame (213) is used for supporting the wafer, and the supporting frame (213) divides the accommodating space into an air filling cavity (214).
2. The apparatus for simultaneous processing of multiple pieces of silicon carbide seed coating according to claim 1, wherein the supporting frame (213) includes a supporting ring (215), a first supporting rod (216) and a second supporting rod (217), the first supporting rod (216) and the second supporting rod (217) are crossed and connected, both ends of the first supporting rod (216) and both ends of the second supporting rod (217) are connected with an inner peripheral wall of the backing ring (212); the intersection point of the first supporting rod (216) and the second supporting rod (217), the circle center of the backing ring (212) and the circle center of the supporting ring (215) are coincident, the supporting ring (215) is simultaneously connected with the first supporting rod (216) and the second supporting rod (217), and the supporting ring (215), the first supporting rod (216) and the second supporting rod (217) are jointly used for dividing the accommodating space into a plurality of inflatable cavities (214).
3. The apparatus for simultaneous processing of multiple silicon carbide seed coating layers according to claim 2, wherein the ratio of the diameter of the support ring (215) to the diameter of the backing ring (212) is between 0.55 and 0.65.
4. The apparatus for simultaneous processing of multiple silicon carbide seed coatings according to claim 2, wherein the support frame (213) further comprises a third support rod (218), the third support rod (218) being connected between the support ring (215) and the backing ring (212) and being located within the plenum (214) for supporting the wafer.
5. The apparatus for simultaneous processing of multiple silicon carbide seed coatings according to claim 4, wherein the third support rod (218) is a bending rod.
6. The apparatus for simultaneous processing of multiple silicon carbide seed coatings according to claim 1, wherein the seed box (210) further comprises an outer rim (219) connected to the chassis (211), the outer rim (219) surrounds the periphery of the backing ring (212), the outer rim (219) has a height greater than the height of the backing ring (212), and the outer rim (219) is configured to be in gap distribution with the wafer placed on the backing ring (212).
7. The apparatus for simultaneous processing of multiple silicon carbide seed coating layers according to claim 1, wherein the backing ring (212) is detachably disposed on an upper surface of the chassis (211).
8. The apparatus for simultaneous processing of multiple silicon carbide seed coating layers according to claim 1, wherein the heating mechanism (100) comprises a housing (110), a graphite crucible (120), a heat insulating layer (130), a heating member (140), an air inlet pipe (150), and an air outlet pipe (160); the graphite crucible (120) is provided with the accommodating cavity, the graphite crucible (120) is arranged in the shell (110), and the heating piece (140) is arranged on the outer side of the graphite crucible (120); the heat preservation layer (130) is arranged between the heating element (140) and the shell (110); the air inlet pipe (150) and the air outlet pipe (160) are connected with the shell (110) and are communicated with the accommodating cavity, the air inlet pipe (150) is used for conveying inert gas into the accommodating cavity, and the air outlet pipe (160) is used for pumping out the gas in the accommodating cavity;
the heating element (140) is a heating resistor or an induction heating coil.
9. The apparatus for simultaneous processing of multiple silicon carbide seed coatings according to claim 1, wherein the seed placement mechanism (200) further comprises a graphite rod (220), a first graphite tray (230), a second graphite tray (240), a retaining member (250), and a graphite felt column (260),
the first end of the graphite rod (220) is connected with the second graphite tray (240), the second end of the graphite rod (220) is spliced with the first graphite tray (230), the second end of the graphite rod (220) extends out from one side of the first graphite tray (230) away from the second graphite tray (240), and the locking piece (250) is detachably connected with the second end of the graphite rod (220);
a plurality of seed boxes (210) which are sequentially overlapped are arranged between the first graphite tray (230) and the second graphite tray (240);
the graphite soft felt column (260) is connected to a side of the first graphite tray (230) facing away from the second graphite tray (240).
10. A method for simultaneous treatment of a plurality of silicon carbide seed coats, characterized in that a silicon carbide seed is treated with the device for simultaneous treatment of a plurality of silicon carbide seed coats according to any one of claims 1 to 9;
the method for simultaneously treating the silicon carbide seed crystal coatings comprises the following steps of:
carrying out sectional vacuum pumping on the accommodating cavity; vacuumizing the accommodating cavity at the speed of 13.5-16.5kPa/h until the air pressure in the accommodating cavity is 6000Pa; then vacuumizing the accommodating cavity at the speed of 1.8-2.2kPa/h until the air pressure in the accommodating cavity is less than 100Pa;
injecting inert gas into the accommodating cavity until the air pressure in the accommodating cavity reaches 100000Pa, and vacuumizing the accommodating cavity again;
heating the accommodating cavity, introducing the inert gas into the accommodating cavity according to the gas transmission rate of 0.1-0.3L/h, and simultaneously pumping out the gas in the accommodating cavity so as to keep the gas pressure in the accommodating cavity at 21-40000Pa; and when the temperature of the accommodating cavity is heated to 400-1600 ℃, the accommodating cavity is kept for 2-5h.
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| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Factory Building A6 #, No. 555 Dujuan Road, Kunshan Development Zone, Kunshan City, Suzhou City, Jiangsu Province, 215300 Patentee after: Suzhou Youjing Semiconductor Technology Co.,Ltd. Country or region after: China Address before: Factory Building A6 #, No. 555 Dujuan Road, Kunshan Development Zone, Kunshan City, Suzhou City, Jiangsu Province, 215300 Patentee before: SUZHOU U KING PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Country or region before: China |