CN116511842B - Manufacturing method of precise metal mask plate and precise metal mask plate - Google Patents
Manufacturing method of precise metal mask plate and precise metal mask plate Download PDFInfo
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- CN116511842B CN116511842B CN202310482681.9A CN202310482681A CN116511842B CN 116511842 B CN116511842 B CN 116511842B CN 202310482681 A CN202310482681 A CN 202310482681A CN 116511842 B CN116511842 B CN 116511842B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 155
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000011888 foil Substances 0.000 claims abstract description 93
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 78
- 238000005530 etching Methods 0.000 claims abstract description 58
- 238000004381 surface treatment Methods 0.000 claims abstract description 16
- 238000001039 wet etching Methods 0.000 claims abstract description 9
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- 239000011347 resin Substances 0.000 claims description 41
- 229920005989 resin Polymers 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229920001187 thermosetting polymer Polymers 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 6
- 239000003344 environmental pollutant Substances 0.000 claims description 5
- 231100000719 pollutant Toxicity 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 38
- 238000002156 mixing Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 44
- 238000001704 evaporation Methods 0.000 description 30
- 239000000758 substrate Substances 0.000 description 29
- 230000008020 evaporation Effects 0.000 description 24
- 230000008569 process Effects 0.000 description 16
- 238000000151 deposition Methods 0.000 description 12
- 238000011282 treatment Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/04—Ferrous alloys, e.g. steel alloys containing manganese
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
- C22C38/105—Ferrous alloys, e.g. steel alloys containing cobalt containing Co and Ni
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Abstract
The application discloses a manufacturing method of a precise metal mask plate, which comprises the following steps: selecting a metal foil, performing surface treatment, applying photoresist, exposing, developing, performing wet etching, removing photoresist, and obtaining the metal foil with the required pattern, wherein the wet etching is to etch one side of the metal foil. The application also discloses a precise metal mask plate which is manufactured by the manufacturing method and is provided with a plurality of through holes penetrating through the body along the thickness direction. According to the application, the metal mask plate is prepared by carrying out single-sided etching on the metal foil, the position of the luminescent material is not deviated when the metal mask plate is used, color mixing is not easy to occur, and the yield of the display panel is high.
Description
Technical Field
The application relates to the technical field of metal material preparation, in particular to a manufacturing method of a precise metal mask plate and the precise metal mask plate.
Background
The organic light emitting diode OLED (Organic Light Emitting Diode) has advantages of light weight, wide viewing angle, fast response time, low temperature resistance, high luminous efficiency, etc., compared to the liquid crystal display, and is regarded as a new display technology of the next generation. At present, an organic semiconductor material is heated and sublimated in a vacuum environment, an organic thin film device stack structure with a designed shape is formed on the surface of a substrate through a metal mask plate with a special sub-pixel pattern, the organic thin film device stack structure is subjected to continuous deposition of various materials to form a film, and an anode and a cathode are respectively plated at two ends of the stack structure, so that an OLED light-emitting device structure with a plurality of layers of thin films can be formed. In the process, a precision Metal Mask (FMM) is required to be used for depositing the light-emitting layer of the OLED device, and the quality of the precision Metal Mask has an important influence on the quality of the final OLED light-emitting device.
At present, a precise metal mask plate is mainly prepared by three processes: etching method precise mask plate, electroforming method precise mask plate and mixed precise mask plate. Compared with the precise mask plate of the etching method, the precise mask plate of the electroforming method and the mixed precise mask plate can realize a screen product with higher resolution, but the maturity of the two processes is insufficient, and the precise mask plate of the etching method is the most widely used precise metal mask plate at present.
In the process of manufacturing an OLED (Organic Light Emitting Diode ) display panel, a vacuum vapor deposition apparatus generally vapor-deposits an organic electroluminescent material on a substrate using a mask plate having through holes to form a light emitting layer. With the increase in size and resolution of products using organic EL elements, there is an increasing demand for positional accuracy of vapor deposition of light-emitting materials. In the etching method, a wet etching process is generally adopted to manufacture the precise metal mask plate, and in the wet etching process, etching reaction occurs on both sides of the metal foil, and through holes are formed through double-sided etching. As shown in fig. 1, the through holes formed by double-sided etching generate protruding hole bonding portions, and when RGB pixel vapor deposition is performed using a conventional FMM, the evaporation points of the OLED material are not all perpendicular to the holes in the FMM, and the presence of the hole bonding portions may deviate the positions of the OLED material vapor deposited on the substrate from the through holes, which easily causes quality problems such as color mixing and the like, and affects the yield of the display panel.
Disclosure of Invention
The present application aims to solve at least one of the technical problems in the related art to some extent. Therefore, an object of the present application is to provide a method for manufacturing a precision metal mask plate, in which the precision metal mask plate has a through hole formed by single-sided etching, the position of the luminescent material is not deviated when the luminescent material is evaporated on the substrate by using the metal mask plate, color mixing is not easily generated, and the yield of the display panel is high.
According to one aspect of the present application, there is provided a method for manufacturing a precision metal mask plate, comprising the steps of:
s100, selecting a metal foil, wherein the metal foil is provided with an A surface and a B surface which are opposite;
s101, surface treatment; the surface of the metal foil is treated, pollutants and an oxide layer on the surface of the metal foil are removed, and the metal foil with a clean surface is obtained;
s102, applying photoresist; applying photoresist on the A surface of the metal foil after the surface treatment; each type of photoresist can be applied to the manufacturing method of the application, and corresponding application processes can be selected according to the type of photoresist used, for example, when dry film photoresist is used, the photoresist can be applied in modes of adhesion, hot pressing and the like, and when wet film photoresist is used, the photoresist can be applied by adopting a wet coating process;
s103, exposing; exposing the metal foil with the photoresist, and imaging the pattern to be manufactured on the photoresist; specifically, a metal foil with photoresist is placed on an exposure machine, light irradiated by the exposure machine passes through a photomask plate, and a pattern to be manufactured is projected on the photoresist; or, the metal foil with the photoresist is directly inscribed on the photoresist by laser irradiation in a laser direct-writing imaging mode;
s104, developing; developing the exposed metal foil with the photoresist, and accurately manufacturing a required pattern on the photoresist; when the photoresist is negative photoresist, the exposed metal foil with the negative photoresist is soaked in a developing solution, the part which is subjected to the photoreaction is solidified and remains, the part which is not subjected to the photoreaction is dissolved by the developing solution, and the projected pattern appears on the remaining negative photoresist; when the photoresist is used as positive photoresist, the exposed metal foil with the positive photoresist is soaked in a developing solution, the parts which are not subjected to light reaction are solidified and remain, the parts which are subjected to light reaction are dissolved by the developing solution, and the projected pattern appears on the remaining positive photoresist.
S105, wet etching; carrying out single-sided etching on the A surface of the metal foil, on which the photoresist film is applied, forming a through hole extending from the A surface to the B surface on the A surface, and etching the pattern on the photoresist film on the metal foil;
s106, photoresist is removed; removing the photoresist after etching is completed;
and S107, obtaining the metal foil with the required pattern.
In the application, a metal foil with opposite A face and B face is selected, a plurality of through holes are manufactured on the metal foil in a single-face etching mode, the metal foil is provided with patterns formed by arranging the through holes, then a metal mask plate is manufactured so as to be convenient for the subsequent manufacture of a display panel, and the metal mask plate with the patterns can vapor-coat organic electroluminescent materials on a substrate of the display panel. With the progress of the etching reaction, the etching width formed by the single-sided etching gradually decreases in the thickness direction of the metal foil until a through hole is formed, and the cross section of the through hole is approximately circular arc-shaped in the thickness direction of the metal foil. In the related art, the through hole formed by double-sided etching has a protruding step structure, and the protruding step structure can cause the evaporation position of the luminescent material on the substrate to deviate from the position of the through hole on the mask plate, so that the problems of color mixing and the like occur. As shown in FIG. 4, the single-side etched through hole does not have a protruding step-shaped structure, the through hole is closely attached to the substrate, the OLED material can be accurately evaporated at the position of the through hole no matter whether the evaporation point of the OLED material is vertical to the through hole or not, the luminous material cannot deviate relative to the through hole when being deposited on the substrate, and the yield of the produced display panel is improved.
Preferably, in step S105, the etching width W of the a-plane A Etching width W greater than B face B . As shown in FIG. 3, W A Pore diameter formed by etching A face, W B The aperture is formed by etching the B surface. The surface a is etched until a through hole extending from the surface a to the surface B is formed, and as the etching reaction proceeds, molecules participating in the etching reaction in the etching liquid are reduced, so that the etching width is reduced along the thickness direction of the metal foil.
Preferably, the size of the through hole ranges from 2 to 300 μm. The dimension range herein refers to the range of the etching width of the B-side. The size of the through hole can be adjusted by adjusting the type and concentration of the etching liquid.
Preferably, step S104 is followed by step S110 of applying a barrier layer to the surface B opposite to the surface a of the metal foil; step S111 is further included after step S106, and the barrier layer is removed. After the barrier layer is applied, the etching liquid only starts etching from the A side, and the B side is protected by the barrier layer. After etching is completed and the photoresist film carried on the a-side is removed, the barrier layer applied on the B-side should also be removed.
Preferably, the barrier layer is a resin film. The material which is resistant to etching solution corrosion and high in adhesiveness should be selected for the barrier layer, so that the barrier layer is tightly attached to the metal foil, etching solution cannot enter between the barrier layer and the metal foil in the process of forming the through holes, unidirectional etching is guaranteed, stability and predictability of the shapes of the through holes are guaranteed, and the accuracy of the through holes is improved.
Preferably, in step S110, the resin is a thermosetting resin or a UV curable resin, and the metal foil with the resin film is subjected to heat treatment or UV exposure after the resin film is applied. After the thermosetting resin is cured, a reticular structure is formed due to intermolecular crosslinking, so that the resin film prepared by the thermosetting resin has high rigidity, high hardness, high temperature resistance and nonflammability, has good stability, is tightly attached to the metal foil, and avoids the metal foil from being etched from the surface B; the UV resin has good film forming performance, and the UV film has the advantages of high gloss, flatness, smoothness, heat resistance, water resistance, scratch resistance and the like, is tightly attached to the metal foil after being solidified, and can prevent etching liquid from etching the B surface of the metal foil. When the resin is thermosetting resin, the resin film is cured by adopting a heat treatment mode, so that the stability of the resin film and the bonding compactness with metal are improved; when the resin is a UV-curable resin, the resin film is cured by UV exposure, and the stability of the resin film and the adhesion to metal are improved.
Preferably, when the resin is a thermosetting resin, the heat treatment temperature is greater than 130 ℃; when the resin is a UV-curable resin, the UV exposure is greater than 50mJ/cm 2 . As a further preferred aspect, the applicant has found that when the thermosetting resin film is cured by heat treatment, the heat treatment at a temperature greater than 180 ℃ can make the curing effect of the resin film better, so that the cured resin and the metal foil are more tightly attached to each other, thereby improving the processing precision of the through hole; as a further preferred aspect, the UV-curable resin film is cured by UV exposure to an exposure of more than 300mJ/cm 2 The resin film curing effect is better, so that the cured resin and the metal foil are tightly attached, and the processing precision of the through hole is improved.
Preferably, the exposure in step S103 is contact exposure or non-contact exposure. The contact exposure means that a Mask is pressed on the photoresist during exposure, and the resolution of the exposure mode is higher; non-contact exposure refers to the existence of a gap between the reticle and the photoresist during exposure. When non-contact exposure is adopted, the size of a gap between a photomask and photoresist can influence the performance such as resolution of the manufactured precise metal mask plate, when the gap is too large, the resolution of the manufactured metal mask plate is reduced, and when the gap is too small, foreign matters attached to the photoresist or film thickness deviation of the photoresist can damage the photomask. The applicant has therefore found that the size of the gap is preferably between 10 and 250 μm.
As a further preference, the applicant adopts non-contact exposure during exposure, and the photomask and the photoresist film do not need to be contacted in the exposure mode, so that the damage of the photomask and the photoresist film is avoided.
Preferably, the developing solution used in the developing in step S104 is an inorganic alkali solution or an organic alkali solution. Because the photoresist is a light sensitive material, the structure and chemical characteristics of the irradiated area and the area not irradiated by light are different, and by utilizing the characteristics, the photoresist can be developed by using organic alkali liquor or inorganic alkali liquor, and the inorganic alkali liquor can be KOH or K 2 CO 3 、Na 2 CO 3 And the like, wherein TMAH and the like can be selected as the organic alkali liquor.
Preferably, in the step S100, the selected metal foil comprises 31-37% of Ni and 31-37% of Co by mass percent: 0 to 6 percent, the total amount of Mn and C is less than 1 percent, and the balance is Fe and unavoidable trace impurities. The thermal expansion coefficient of the iron-nickel alloy is lower, the flatness of the prepared metal foil is higher, and the yield of the metal mask plate is improved.
In addition, in order to obtain a finished metal mask plate, there is a subsequent step after step S107:
s108, cutting the patterned metal foil into metal mask strips according to set dimensions.
S109, a plurality of metal mask strips are welded and fixed on the screen frame after being precisely aligned, and redundant parts are cut off to form a precise metal mask plate.
According to an aspect of the present application, there is provided a precision metal mask plate manufactured by the above manufacturing process, the precision metal mask plate having a plurality of through holes penetrating through a body in a thickness direction. The through holes are arranged to form a required pattern.
Preferably, the accuracy of the size of the through hole is less than or equal to +/-1.5 mu m. The dimensional accuracy refers to the degree of closeness of the actual numerical value of the aperture to the design numerical value, i.e., the difference between the actual numerical value of the aperture and the design numerical value is controlled to be less than or equal to + -1.5 μm.
Additional aspects and advantages of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the application.
Drawings
FIG. 1 is a schematic diagram of an existing etching process for vapor deposition of OLED material using a precision metal mask;
FIG. 2 is a schematic flow chart of the manufacturing method of the present application;
FIG. 3 is a schematic diagram of a precision metal mask plate manufactured by using a conventional etching method;
FIG. 4 is a schematic illustration of the deposition of OLED material using the precision metal mask plate of the etching process of the present application.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings. The embodiments described below by referring to the drawings are illustrative and intended to explain the present application and should not be construed as limiting the application.
Embodiments of the present application are described below with reference to the accompanying drawings.
Example 1:
the manufacturing method of the metal mask plate, as shown in fig. 2, comprises the following steps:
s100, selecting a metal foil, wherein the metal foil is provided with an A surface and a B surface which are opposite;
s101, surface treatment; the surface of the metal foil is treated, pollutants and an oxide layer on the surface of the metal foil are removed, and the metal foil with a clean surface is obtained;
s102, applying photoresist; coating photoresist on the A surface of the metal foil after surface treatment by a wet coating process;
s103, exposing; exposing the metal foil coated with the photoresist film, and imaging the pattern to be manufactured on the photoresist;
s104, developing; developing the exposed metal foil coated with the photoresist, and accurately manufacturing a required pattern on the photoresist;
s110, a barrier layer is applied to the surface B opposite to the surface A of the metal foil; specifically, the barrier layer is a thermosetting resin film, and the metal foil with the resin film is subjected to heat treatment after the resin film is applied, wherein the temperature of the heat treatment is 130 ℃ or higher.
S105, wet etching; single-sided etching is performed on the A side with the photoresist film on the metal foil, and the A side is formed to extend from the A side to the B side as shown in FIG. 3Through hole for etching pattern on photoresist on metal foil, etching height H of B surface B The etching height HA of the surface A is 0, and the etching height HA of the surface A is the thickness of the metal foil;
s106, photoresist is removed; removing the photoresist film after etching is completed;
s111, removing the barrier layer;
s107, obtaining a metal foil with a required pattern;
s108, cutting the patterned metal foil into metal mask strips according to set dimensions;
s109, a plurality of metal mask strips are welded and fixed on the screen frame after being precisely aligned, and redundant parts are cut off to form a precise metal mask plate.
The prepared precise metal mask plate is used for evaporating luminescent materials on a substrate of a display panel, and the steps are as follows:
s201, processing a substrate; before evaporation, the substrate needs to be subjected to surface treatment to ensure the adhesion and uniformity of the luminescent material. Surface treatments typically include mechanical polishing, chemical treatments, and the like.
S202, vacuumizing a vacuum system; before the evaporation process, the gas in the vacuum cavity needs to be pumped out to ensure that the vacuum degree can meet the evaporation requirement, and the vacuum degree has important influence on the quality and uniformity of an evaporation result.
S203, evaporation plating; the luminescent material is heated in the vacuum chamber to evaporate into a gaseous state, and the angle of the evaporation nozzle is adjusted to 50-60 °, specifically, in this embodiment, the angle of the nozzle is 55 °. And evaporating the substrate by using the prepared precise metal mask plate, and depositing the luminescent material on the surface of the substrate through the through holes of the mask plate.
S204, film forming; in the evaporation process, a layer of film is formed on the surface of the substrate by depositing a material.
S205, annealing treatment; annealing treatment is needed after the film deposition to improve the compactness and crystallinity of the film.
The display panel is manufactured by adopting the metal mask plate, the offset distance of the luminescent material on the substrate and the yield of the display panel are tested, and the test results are shown in table 1.
Example 2:
the manufacturing method of the metal mask plate comprises the following steps:
s100, selecting a metal foil, wherein the metal foil is provided with an A surface and a B surface which are opposite;
s101, surface treatment; the surface of the metal foil is treated, pollutants and an oxide layer on the surface of the metal foil are removed, and the metal foil with a clean surface is obtained;
s102, applying photoresist; coating photoresist on the A surface of the metal foil after surface treatment by a wet coating process;
s103, exposing; exposing the metal foil coated with the photoresist, and imaging the pattern to be manufactured on the photoresist;
s104, developing; developing the exposed metal foil with the photoresist, and accurately manufacturing a required pattern on the photoresist;
s105, wet etching; single-sided etching is performed on the A face with the photoresist film on the metal foil, through holes extending from the A face to the B face are formed on the A face, and patterns on the photoresist are etched on the metal foil, and at the moment, the etching height H of the B face B Is 2 mu m; specifically, the single-sided etching is performed by immersing all of the metal foil except the B-side in an etching solution to form a through hole extending from the a-side to the B-side. In this embodiment, the B-side is slightly etched because the barrier layer is not applied, and the B-side cannot be guaranteed to be completely free from the etching solution.
S106, removing the film; removing the photoresist film after etching is completed;
s107, obtaining a metal foil with a required pattern;
s108, cutting the patterned metal foil into metal mask strips according to set dimensions;
s109, a plurality of metal mask strips are welded and fixed on the screen frame after being precisely aligned, and redundant parts are cut off to form a precise metal mask plate.
The prepared precise metal mask plate is used for evaporating luminescent materials on a substrate of a display panel, and the steps are as follows:
s201, processing a substrate; before evaporation, the substrate needs to be subjected to surface treatment to ensure the adhesion and uniformity of the luminescent material. Surface treatments typically include mechanical polishing, chemical treatments, and the like.
S202, vacuumizing a vacuum system; before the evaporation process, the gas in the vacuum cavity needs to be pumped out to ensure that the vacuum degree can meet the evaporation requirement, and the vacuum degree has important influence on the quality and uniformity of an evaporation result.
S203, evaporation plating; the luminescent material is heated in the vacuum chamber to evaporate into a gaseous state, and the angle of the evaporation nozzle is adjusted to 50-60 °, specifically, in this embodiment, the angle of the nozzle is 55 °. And evaporating the substrate by using the prepared precise metal mask plate, and depositing the luminescent material on the surface of the substrate through the through holes of the mask plate.
S204, film forming; in the evaporation process, a layer of film is formed on the surface of the substrate by depositing a material.
S205, annealing treatment; annealing treatment is needed after the film deposition to improve the compactness and crystallinity of the film.
The display panel is manufactured by adopting the metal mask plate, the offset distance of the luminescent material on the substrate and the yield of the display panel are tested, and the test results are shown in table 1.
Comparative example 1:
the manufacturing method of the metal mask plate comprises the following steps:
s100, selecting a metal foil, wherein the metal foil is provided with an A surface and a B surface which are opposite;
s101, surface treatment; the surface of the metal foil is treated, pollutants and an oxide layer on the surface of the metal foil are removed, and the metal foil with a clean surface is obtained;
s102, applying photoresist; and coating photoresist on the A side and the B side of the cleaned metal foil by a wet coating process.
S103, exposing; exposing the metal foil with the photoresist, and imaging the pattern to be manufactured on the photoresist;
s104, developing; developing the exposed metal foil with the photoresist, and accurately manufacturing a required pattern on the photoresist;
s105, wet etching; double-sided etching is carried out on the metal foil to form a through hole, and patterns on the photoresist are etched on the metal foil, wherein the etching height HB of the B surface is 4 mu m;
s106, photoresist is removed; removing the photoresist after etching is completed;
s107, obtaining a metal foil with a required pattern;
s108, cutting the patterned metal foil into metal mask strips according to set dimensions;
s109, a plurality of metal mask strips are welded and fixed on the screen frame after being precisely aligned, and redundant parts are cut off to form a precise metal mask plate.
The prepared precise metal mask plate is used for evaporating luminescent materials on a substrate of a display panel, and the steps are as follows:
s201, processing a substrate; before evaporation, the substrate needs to be subjected to surface treatment to ensure the adhesion and uniformity of the luminescent material. Surface treatments typically include mechanical polishing, chemical treatments, and the like.
S202, vacuumizing a vacuum system; before the evaporation process, the gas in the vacuum cavity needs to be pumped out to ensure that the vacuum degree can meet the evaporation requirement, and the vacuum degree has important influence on the quality and uniformity of an evaporation result.
S203, evaporation plating; the luminescent material is heated in the vacuum chamber to evaporate into a gaseous state, and the angle of the evaporation nozzle is adjusted to 50-60 °, specifically, in this embodiment, the angle of the nozzle is 55 °. And evaporating the substrate by using the prepared precise metal mask plate, and depositing the luminescent material on the surface of the substrate through the through holes of the mask plate.
S204, film forming; in the evaporation process, a layer of film is formed on the surface of the substrate by depositing a material.
S205, annealing treatment; annealing treatment is needed after the film deposition to improve the compactness and crystallinity of the film.
The display panel is manufactured by adopting the metal mask plate, the offset distance of the luminescent material on the substrate and the yield of the display panel are tested, and the test results are shown in table 1.
Table 1: examples, comparative examples luminescent material offset distance and yield test results of display panel
| Numbering device | Offset distance (μm) of luminescent material | Yield of display panel (%) |
| Example 1 | 0 | ＞90 |
| Example two | 1.7 | ＞65 |
| Comparative example one | 3.4 | ＞35 |
While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.
Claims (8)
1. The manufacturing method of the precise metal mask plate is characterized by comprising the following steps:
s100, selecting a metal foil, wherein the metal foil is provided with an A surface and a B surface which are opposite;
s101, surface treatment; the surface of the metal foil is treated, pollutants and an oxide layer on the surface of the metal foil are removed, and the metal foil with a clean surface is obtained;
s102, applying photoresist; applying photoresist on the A surface of the metal foil after the surface treatment;
s103, exposing; exposing the metal foil with the photoresist, and imaging the pattern to be manufactured on the photoresist;
s104, developing; developing the exposed metal foil with the photoresist, and accurately manufacturing a required pattern on the photoresist;
s110, a barrier layer is applied to the surface B of the opposite surface A of the metal foil, and the barrier layer is a resin film; the resin is thermosetting resin or UV curable resin, and the metal foil with the resin film is subjected to heat treatment or UV exposure after the resin film is applied; when the resin is thermosetting resin, the heat treatment temperature is more than 130 ℃; when the resin is a UV-curable resin, the UV exposure is greater than 50mJ/cm 2 ；
S105, wet etching; carrying out single-sided etching on the A surface of the metal foil, on which the photoresist film is applied, forming a through hole extending from the A surface to the B surface on the A surface, and etching the pattern on the photoresist film on the metal foil;
s106, photoresist is removed; removing the photoresist after etching is completed;
s111, removing the barrier layer;
and S107, obtaining the metal foil with the required pattern.
2. The method of manufacturing a precision metal mask blank according to claim 1, wherein in step S105, an etching width W of a face a A Etching width W greater than B face B 。
3. The method of manufacturing a precision metal mask plate according to claim 2, wherein the size of the through hole ranges from 2 μm to 300 μm.
4. The method according to claim 1, wherein the exposure in step S103 is contact exposure or non-contact exposure.
5. The method according to claim 1, wherein the developing solution used in the developing in the step S104 is an inorganic alkali solution or an organic alkali solution.
6. The method for manufacturing a precision metal mask plate according to claim 1, wherein in the step S100, the selected metal foil comprises 31-37% by mass of Ni: 0-6%, mn and C less than 1%, and Fe and inevitable trace impurities.
7. A precision metal mask plate manufactured by the manufacturing method according to any one of claims 1 to 6, characterized in that the precision metal mask plate has a plurality of through holes penetrating through the body in the thickness direction.
8. The precision metal mask plate according to claim 7, wherein the accuracy of the size of the through hole is not more than ±1.5 μm.
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Citations (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56163270A (en) * | 1980-05-21 | 1981-12-15 | Toshiba Corp | Etching method for metallic plate |
| JPH0715139A (en) * | 1993-06-21 | 1995-01-17 | Hitachi Ltd | Manufacture of multilayer wiring board |
| JP2001052605A (en) * | 1999-08-04 | 2001-02-23 | Toppan Printing Co Ltd | Shadow mask of high definition and manufacture of the same |
| JP2003272839A (en) * | 2002-03-14 | 2003-09-26 | Dainippon Printing Co Ltd | Manufacturing method of masking member for evaporation treatment |
| JP2004232025A (en) * | 2003-01-30 | 2004-08-19 | Ulvac Japan Ltd | Mask for vapor deposition and production method therefor |
| JP2004266230A (en) * | 2003-03-04 | 2004-09-24 | Shinko Electric Ind Co Ltd | Circuit board and method for manufacturing the same |
| CN1578547A (en) * | 2003-07-25 | 2005-02-09 | 大日本网目版制造株式会社 | Mask for vapour-deposition use and producing method thereof |
| JP2009088572A (en) * | 2009-01-26 | 2009-04-23 | Tessera Interconnect Materials Inc | Manufacturing method of wiring circuit board, wiring circuit board, and manufacturing method of multilayer wiring board |
| WO2013166951A1 (en) * | 2012-05-08 | 2013-11-14 | 昆山允升吉光电科技有限公司 | Mixed fabricating technique for high precision metal mask plate |
| CN104164647A (en) * | 2013-05-17 | 2014-11-26 | 昆山允升吉光电科技有限公司 | Manufacture technology of mask plate |
| JP2015129333A (en) * | 2014-01-08 | 2015-07-16 | 大日本印刷株式会社 | Method of manufacturing laminate mask and laminate mask with protective film |
| CN107003614A (en) * | 2014-09-19 | 2017-08-01 | 韩国生产技术研究院 | Utilize the method for protection fine pattern and the deposited metal layer of back-exposure technology |
| KR101955454B1 (en) * | 2018-05-10 | 2019-03-08 | 풍원정밀(주) | Separate mask used at deposition step of tv oled and the manufacturing methode thereof |
| CN109844974A (en) * | 2016-09-13 | 2019-06-04 | Lg伊诺特有限公司 | Deposition mas metal plate and deposition mas and its manufacturing method |
| CN210134157U (en) * | 2019-05-15 | 2020-03-10 | 江西联创致光科技有限公司 | OLED is accurate metal shade for coating by vaporization |
| CN112534605A (en) * | 2018-07-12 | 2021-03-19 | Lg伊诺特有限公司 | Mask for evaporation of metal plate material for evaporation of OLED pixel |
| JP2021066896A (en) * | 2019-10-17 | 2021-04-30 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask and vapor deposition mask |
| CN113373406A (en) * | 2021-06-17 | 2021-09-10 | 浙江众凌科技有限公司 | Precise metal mask and etching laser composite manufacturing method thereof |
| KR20210122706A (en) * | 2020-03-31 | 2021-10-12 | 스템코 주식회사 | Metal sheet Structure and Method for Manufacturing the Metal sheet and Metal Mask having the Same |
| CN113909494A (en) * | 2021-09-22 | 2022-01-11 | 寰采星科技(宁波)有限公司 | Preparation method of metal foil for metal mask plate and preparation method of metal mask plate |
| CN114433847A (en) * | 2022-02-11 | 2022-05-06 | 寰采星科技(宁波)有限公司 | Preparation method of high-cleanness metal foil and preparation method of metal mask strip |
| CN114535580A (en) * | 2022-03-02 | 2022-05-27 | 寰采星科技(宁波)有限公司 | Preparation method of high-flatness metal foil suitable for manufacturing metal mask plate |
| CN115362570A (en) * | 2020-03-31 | 2022-11-18 | 南韩商斯天克有限公司 | Metal thin plate structure, metal thin plate manufacturing method, and metal mask including metal thin plate |
| CN115627443A (en) * | 2020-11-18 | 2023-01-20 | 匠博先进材料科技(广州)有限公司 | Vapor deposition mask, vapor deposition module, vapor deposition device, display device, and method and device for manufacturing display device |
| CN115679219A (en) * | 2022-11-14 | 2023-02-03 | 寰采星科技(宁波)有限公司 | Iron-nickel alloy foil for precise metal mask plate and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4050631B2 (en) * | 2003-02-21 | 2008-02-20 | 株式会社ルネサステクノロジ | Manufacturing method of electronic device |
-
2023
- 2023-04-27 CN CN202310482681.9A patent/CN116511842B/en active Active
Patent Citations (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56163270A (en) * | 1980-05-21 | 1981-12-15 | Toshiba Corp | Etching method for metallic plate |
| JPH0715139A (en) * | 1993-06-21 | 1995-01-17 | Hitachi Ltd | Manufacture of multilayer wiring board |
| JP2001052605A (en) * | 1999-08-04 | 2001-02-23 | Toppan Printing Co Ltd | Shadow mask of high definition and manufacture of the same |
| JP2003272839A (en) * | 2002-03-14 | 2003-09-26 | Dainippon Printing Co Ltd | Manufacturing method of masking member for evaporation treatment |
| JP2004232025A (en) * | 2003-01-30 | 2004-08-19 | Ulvac Japan Ltd | Mask for vapor deposition and production method therefor |
| JP2004266230A (en) * | 2003-03-04 | 2004-09-24 | Shinko Electric Ind Co Ltd | Circuit board and method for manufacturing the same |
| CN1578547A (en) * | 2003-07-25 | 2005-02-09 | 大日本网目版制造株式会社 | Mask for vapour-deposition use and producing method thereof |
| JP2009088572A (en) * | 2009-01-26 | 2009-04-23 | Tessera Interconnect Materials Inc | Manufacturing method of wiring circuit board, wiring circuit board, and manufacturing method of multilayer wiring board |
| WO2013166951A1 (en) * | 2012-05-08 | 2013-11-14 | 昆山允升吉光电科技有限公司 | Mixed fabricating technique for high precision metal mask plate |
| CN104164647A (en) * | 2013-05-17 | 2014-11-26 | 昆山允升吉光电科技有限公司 | Manufacture technology of mask plate |
| JP2015129333A (en) * | 2014-01-08 | 2015-07-16 | 大日本印刷株式会社 | Method of manufacturing laminate mask and laminate mask with protective film |
| CN107003614A (en) * | 2014-09-19 | 2017-08-01 | 韩国生产技术研究院 | Utilize the method for protection fine pattern and the deposited metal layer of back-exposure technology |
| CN109844974A (en) * | 2016-09-13 | 2019-06-04 | Lg伊诺特有限公司 | Deposition mas metal plate and deposition mas and its manufacturing method |
| KR101955454B1 (en) * | 2018-05-10 | 2019-03-08 | 풍원정밀(주) | Separate mask used at deposition step of tv oled and the manufacturing methode thereof |
| CN112534605A (en) * | 2018-07-12 | 2021-03-19 | Lg伊诺特有限公司 | Mask for evaporation of metal plate material for evaporation of OLED pixel |
| CN210134157U (en) * | 2019-05-15 | 2020-03-10 | 江西联创致光科技有限公司 | OLED is accurate metal shade for coating by vaporization |
| JP2021066896A (en) * | 2019-10-17 | 2021-04-30 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask and vapor deposition mask |
| KR20210122706A (en) * | 2020-03-31 | 2021-10-12 | 스템코 주식회사 | Metal sheet Structure and Method for Manufacturing the Metal sheet and Metal Mask having the Same |
| CN115362570A (en) * | 2020-03-31 | 2022-11-18 | 南韩商斯天克有限公司 | Metal thin plate structure, metal thin plate manufacturing method, and metal mask including metal thin plate |
| CN115627443A (en) * | 2020-11-18 | 2023-01-20 | 匠博先进材料科技(广州)有限公司 | Vapor deposition mask, vapor deposition module, vapor deposition device, display device, and method and device for manufacturing display device |
| CN113373406A (en) * | 2021-06-17 | 2021-09-10 | 浙江众凌科技有限公司 | Precise metal mask and etching laser composite manufacturing method thereof |
| CN113909494A (en) * | 2021-09-22 | 2022-01-11 | 寰采星科技(宁波)有限公司 | Preparation method of metal foil for metal mask plate and preparation method of metal mask plate |
| CN114433847A (en) * | 2022-02-11 | 2022-05-06 | 寰采星科技(宁波)有限公司 | Preparation method of high-cleanness metal foil and preparation method of metal mask strip |
| CN114535580A (en) * | 2022-03-02 | 2022-05-27 | 寰采星科技(宁波)有限公司 | Preparation method of high-flatness metal foil suitable for manufacturing metal mask plate |
| CN115679219A (en) * | 2022-11-14 | 2023-02-03 | 寰采星科技(宁波)有限公司 | Iron-nickel alloy foil for precise metal mask plate and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| 吕可.三维MXene多孔结构的构建与应用研究进展.《化学通报》.2022,第85卷(第5期),第514-538页. * |
| 张福学.《无驱动结构微机械陀螺及其应用》.国防工业出版,2013,(第1版),第331-333页. * |
| 李艳丽.先进光刻技术的发展历程与最新进展.《激光与光电子学进展》.2022,第59卷(第9期),第86-102页. * |
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