CN116329781A - Brittle material natural cracking device and method thereof - Google Patents

Brittle material natural cracking device and method thereof Download PDF

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CN116329781A
CN116329781A CN202111593358.6A CN202111593358A CN116329781A CN 116329781 A CN116329781 A CN 116329781A CN 202111593358 A CN202111593358 A CN 202111593358A CN 116329781 A CN116329781 A CN 116329781A
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brittle material
laser
groups
natural
focus
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林学春
韩世飞
于海娟
何超建
左杰希
宁超宇
杜家宝
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
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Abstract

The invention provides a brittle material natural cracking device and a method thereof. The method is mainly characterized in that steam formed at the focus position in the material by the pulse laser is continuously expanded to the periphery, and after scanning is completed, the whole wafer is warped, so that natural splinter of the material can be realized.

Description

Brittle material natural cracking device and method thereof
Technical Field
The present disclosure relates to the technical field of laser cold cracking, and in particular, to a brittle material natural cracking device and a method thereof.
Background
The third-generation semiconductor material is represented by wide forbidden band compound semiconductors such as silicon carbide, gallium nitride and diamond, and the like, has complex crystal growth process, high hardness and high production cost, so that the cost of the third-generation semiconductor wafer is high, and the third-generation semiconductor material becomes one of bottleneck problems for preventing the rapid development of the third-generation semiconductor device. Taking silicon carbide as an example, the traditional wafer separation technology adopts a diamond wire cutting process. The dicing speed of the diamond wire is low, the cutting cost is high, the kerf width generated by cutting is wide, and the cutting loss is about 50%; the damaged layer on the surface of the cutting sheet is deeper and has lines with different degrees, and expensive subsequent processes such as grinding, mechanical polishing, chemical polishing and the like are required to eliminate all the defects. In addition, when microelectronic elements are operated on silicon carbide wafers, it may be necessary to remove excess material in order for the device to perform better, resulting in further material loss and increased manufacturing costs. The traditional splitting process can not meet the high-speed development requirement of high-quality third-generation semiconductor devices; the third generation semiconductor device has low processing efficiency and high production cost.
The ultrafast laser cold cracking technology is that laser is focused inside brittle transparent material by means of ultrafast laser via one series of optical systems to form modified layer inside the material based on multiphoton effect and avalanche ionization effect, and the modified layer consists of mainly silicon and carbon phase, and polymer is adhered to the upper surface of the modified layer, cooled fast, etc. to form crack layer inside the material to obtain ultrathin wafer.
Disclosure of Invention
The main purpose of the present disclosure is to provide a brittle material natural cracking device and a method thereof, which aims to solve the problem that the third-generation semiconductor device is difficult to produce.
To achieve the above object, the present disclosure provides a brittle material natural cracking device, comprising:
the adsorption table is provided with a bearing surface on the upper end surface, and the bearing surface is used for bearing the material to be brittle;
the laser system is arranged on the upper side of the adsorption table and is provided with an emergent part which is arranged towards the bearing surface and is used for generating light beams and emergent to the bearing surface;
the beam focusing system is arranged between the laser system and the adsorption table and is positioned on the light path of the light beam and used for focusing the light beam to form a focus; the method comprises the steps of,
the three-dimensional displacement system is arranged between the adsorption table and the light beam focusing system and used for adjusting the relative position between the adsorption table and the light beam focusing system.
Optionally, the laser system includes:
the pulse laser is arranged on the upper side of the adsorption table and provided with a transmitting end facing the upper side of the adsorption table, and the transmitting end is used for transmitting laser;
the beam expanding system is arranged on the light path of the laser and used for expanding the laser to obtain a beam; the method comprises the steps of,
the first dichroic mirror is provided with a reflecting surface, the first dichroic mirror is arranged between the beam expanding system and the adsorption table, the reflecting surface is used for reflecting the light beam to the bearing surface, and the reflecting surface forms an emergent part.
Optionally, the first bicolor mirror has an incident surface opposite to the reflecting surface;
the brittle material splitting device also comprises a monitoring device, wherein the monitoring device is provided with an imaging part, and the imaging part is positioned above the first dichroic mirror and is positioned on the reverse extension light path of the first dichroic mirror.
Optionally, the brittle material splitting device further includes an illumination system disposed on the upper side of the adsorption table, and the illumination system includes:
the half-transmitting half-reflecting mirror is arranged on the reverse extension light path of the first dichroic mirror; the method comprises the steps of,
the light-emitting device is used for emitting illumination light to the half mirror;
the reflection light path of the half mirror and the reverse extension light path of the first dichroic mirror are positioned on the same axis, and the imaging part is positioned above the half mirror and on the reverse extension light path of the half mirror.
Optionally, the pulse form of the pulse laser includes any one of single pulse, double pulse or multiple pulse; and/or the number of the groups of groups,
the pulse width of the pulse laser comprises any one of nanoseconds, sub-nanoseconds, picoseconds, sub-picoseconds and femtoseconds; and/or the number of the groups of groups,
the beam expanding system includes any one of a single lens system, a single beam expander system, a multi-lens system, or an optical 4f system.
Optionally, the three-dimensional displacement system comprises:
the horizontal adjusting device comprises a translation table, and the translation table is provided with a movable stroke horizontally moving along the front, back, left and right directions; ,
the height adjusting device comprises a lifting table, and the lifting table is provided with a movable stroke moving up and down; and
the programming controller is electrically connected to the horizontal adjusting device and the height adjusting device;
the absorption table is arranged on the translation table, the light beam focusing system is arranged on the lifting table, and the programming controller is used for controlling the horizontal adjusting device and the height adjusting device to move.
Optionally, the beam focusing system includes any one of a focusing lens or a microscope objective; and/or the number of the groups of groups,
the adsorption table comprises a ceramic vacuum adsorption table.
The disclosure also provides a brittle material natural cracking method, comprising the following steps:
placing a brittle material on an adsorption table;
controlling a laser system to generate a light beam, and controlling the light beam to focus to form a focus so that the focus is positioned on the brittle material;
and adjusting the relative position between the adsorption table and the light beam focusing system so that the focus moves and scans on the brittle material.
Alternatively, the brittle material includes any one of silicon carbide, gallium nitride, diamond, a material composed of group IV elements, group III and group V elements, or a material composed of group II and group VI elements; and/or the number of the groups of groups,
the diameter of the focus is any one of < 5 mu m, < 4 mu m or < mu m; and/or the number of the groups of groups,
the focal point is at a distance of any one of 500 μm, 250 μm or 175 μm from the bearing surface.
Optionally, the focal point moves and scans on the brittle material, so as to form a plurality of scanning paths which are arranged at intervals, scanning intervals are formed among the plurality of scanning paths, and the plurality of scanning paths are arranged to completely cover the brittle material;
wherein the shape of the scan path includes: circular, oval, circular, rectangular, or parallel linear.
Alternatively, the scanning interval is any one of 200 μm, 100 μm, 50 μm, 25 μm, 12.5 μm, or 5 μm; and/or the number of the groups of groups,
the moving speed of the moving scan is any one of 1000mm/s, 500mm/s, 200mm/s, 100mm/s, 50mm/s, 20mm/s or 10mm/s.
In the technical scheme provided by the disclosure, the material to be brittle is arranged on the adsorption table, the light beam focusing system is adjusted to enable the focus to be positioned inside the material to be brittle, the three-dimensional displacement system is controlled to control the focus to move on the material to be brittle, and the focus is modified in the whole area of the material. The high-energy pulse laser is focused in the material to be brittle, when the power density at the focus reaches a certain value, the material is gasified to form steam, and natural splinter of the material is realized through expansion of the steam. The main difference with the laser cold cracking technology is that the steps of attaching polymer on the surface, quick cooling and the like after laser modification are not needed. The scheme reduces the introduction of other impurities during the production of the wafer and can improve the production efficiency.
Drawings
FIG. 1 is a schematic structural diagram of a brittle material natural cracking device according to an embodiment of the disclosure;
FIG. 2 is a schematic view of a path of a first embodiment of a brittle material fracturing device and natural fracturing method according to the present disclosure;
FIG. 3 is a graph of brittle material variation according to a first embodiment of the present disclosure for providing a brittle material fracturing device scanning method;
FIG. 4 is a graph showing the results of a first embodiment of a method of scanning a brittle material splitting apparatus according to the present disclosure;
FIG. 5 is a schematic view of a path of a second embodiment of the present disclosure providing a brittle material fracture splitting apparatus scanning method;
FIG. 6 is a graph showing brittle material results of a second embodiment of the brittle material fracturing device scanning method provided by the present disclosure;
FIG. 7 is a schematic diagram of a scanning method for a brittle material fracturing device according to a second embodiment of the present disclosure;
FIG. 8 is a schematic diagram of a third embodiment of a scanning method for brittle material fracturing device according to the present disclosure;
fig. 9 is a schematic structural view of a wedge-shaped material in a brittle material splitting apparatus according to the present disclosure.
Reference numerals illustrate:
Figure BDA0003430129580000041
Figure BDA0003430129580000051
Detailed Description
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
It should be noted that, if a directional indication is referred to in the embodiments of the present disclosure, the directional indication is merely used to explain a relative positional relationship between the components, a movement condition, and the like in a certain specific posture, and if the specific posture is changed, the directional indication is correspondingly changed.
In addition, if there is a description of "first," "second," etc. in the embodiments of the present disclosure, the description of "first," "second," etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the technical solutions, and when the technical solutions are contradictory or cannot be implemented, the combination of the technical solutions should be considered as not existing, and not falling within the protection scope of the present disclosure.
Referring to fig. 1, the present disclosure provides a brittle material natural cracking device 100, which includes an adsorption table 7, a laser system, a beam focusing system 5 and a three-dimensional displacement system; the upper end surface of the adsorption table 7 is provided with a bearing surface for bearing the material 6 to be brittle; the laser system is arranged on the upper side of the adsorption table 7 and is provided with an emergent part which is arranged towards the bearing surface, and the laser system is used for generating light beams and emergent the light beams to the bearing surface; the beam focusing system is arranged between the laser system and the adsorption table and is positioned on the light path of the beam and used for focusing the beam to form a focus; the three-dimensional displacement system is arranged between the adsorption table 7 and the beam focusing system 5 and is used for adjusting the relative position between the adsorption table 7 and the beam focusing system 5.
In the technical scheme provided by the disclosure, the material 6 to be brittle is arranged on the adsorption table, the light beam focusing system is adjusted to enable the focus to be positioned inside the material 6 to be brittle, the three-dimensional displacement system is controlled to control the focus to move on the material 6 to be brittle, and the focus is modified in the whole area of the material. The high-energy pulse laser is focused in the material 6 to be brittle, when the power density at the focus reaches a certain value, the material is gasified to form steam, and natural splinter of the material is realized through expansion of the steam. The main difference with the laser cold cracking technology is that the steps of attaching polymer on the surface, quick cooling and the like after laser modification are not needed. The scheme reduces the introduction of other impurities during the production of the wafer and can improve the production efficiency.
Further, the laser system comprises a pulse laser 1, a beam expanding system 2 and a first dichroic mirror 4; the pulse laser 1 is arranged on the upper side of the adsorption table 7, and the pulse laser 1 is provided with a transmitting end facing the upper side of the adsorption table, and the transmitting end is used for transmitting laser; the beam expanding system 2 is arranged on the light path of the laser and used for expanding the laser to obtain a beam 3; the first dichroic mirror 4 has a reflecting surface, which is disposed between the beam expanding system 2 and the adsorption table 7, and is used for reflecting the light beam onto the bearing surface, and the reflecting surface forms an emitting portion. The dichroic mirror may transmit light of a certain wavelength almost completely, and reflect light of other wavelengths almost completely, and the beam expanding system 2 expands the laser beam directly emitted by the pulse laser 1, and reflects the laser beam onto the bearing surface through the first dichroic mirror 4, so as to provide a sufficiently high peak power.
Further, the brittle material natural fracture device 100 further comprises a monitoring device 13, wherein the monitoring device 13 is disposed above the adsorption table 7 for monitoring the focus. The surface damage during the machining process is monitored by the monitoring device 13 and the depth of focus of the focal spot is determined.
In one embodiment provided by the present disclosure, the first dichroic mirror 4 has an incident surface disposed opposite to the reflecting surface; the monitoring device 13 has an imaging section which is located above the first dichroic mirror 4 and on the reverse extended optical path of the first dichroic mirror 4. By the characteristics of the dichroic mirror, the monitoring device 13 can directly monitor through the dichroic mirror, so that the accurate monitoring focus position of the monitoring device 13 is ensured.
The monitoring device 13 may be implemented in various ways, for example, as a monitoring camera or the like, as long as it can monitor the focus.
In addition, the brittle material natural fracture device 100 further comprises an illumination system arranged on the upper side of the adsorption table for illuminating the focus.
In an embodiment provided in the present disclosure, the illumination system directly irradiates onto the incident surface of the first dichroic mirror 4, and by adjusting the angle between the illumination system and the first dichroic mirror 4, the illumination light 12 and the light beam reflected by the reflecting surface are coaxially arranged, so as to provide illumination for the focal point, so that the monitoring device 13 can clearly reflect the focal point position.
Specifically, the illumination system includes a light emitting device 11 and a half mirror 14; the half mirror 14 is arranged on the reverse extension light path of the first dichroic mirror 4; the light emitting device 11 is used for emitting illumination light to the half mirror 14; wherein the reflected light path of the half mirror 14 is on the same axis as the 4-direction extended light path of the first dichroic mirror. By providing the half mirror 14, it is convenient to select the light of the illumination system, without having to mount the light selective reflection function on the first mirror 4 entirely.
Specifically, the pulse form of the pulse laser 1 includes any one of single pulse, double pulse, or multiple pulse. So as to generate a sufficiently high peak power.
The pulse width of the pulse laser includes any one of nanoseconds, sub-nanoseconds, picoseconds, sub-picoseconds, and femtoseconds.
Likewise, the beam expanding system 2 includes any one of a single lens system, a single beam expander system, a multi-lens system, or an optical 4f system. As long as the beam of the laser light of the pulse laser 1 can be expanded.
It should be noted that, among the three relevant technical features of the specific arrangements of the pulse laser 1 and the beam expanding system 2, the pulse laser may be either one or two of them may be present, or both may be present at the same time, which is not limited herein.
The optical 4f system is a 4f system in which two lenses having a focal length of f are separated by 2f, and the object distance is f and the distance is also f. So as to achieve the purpose of beam expansion.
On the other hand, there are various embodiments of the three-dimensional displacement system, for example, the adsorption table 7 is provided on a movable device, and the movable device has a movable stroke in a horizontal direction and in an up-down direction, and the three-dimensional displacement is directly realized by the movable adsorption table. Specifically, in this embodiment, the three-dimensional displacement system includes a level adjustment device and a height adjustment device; the horizontal adjustment device comprises a translation table 8, wherein the translation table 8 has a movable stroke horizontally moving along the front, back, left and right directions; the height adjusting device comprises a lifting table 10, wherein the lifting table 10 has a movable stroke moving up and down; wherein, the absorption table 7 is arranged on the translation table, and the light beam focusing system 5 is arranged on the lifting table 10. The adsorption table 7 and the beam focusing system 5 are arranged on the horizontal adjusting device and the height adjusting device respectively, so that the horizontal movement and the up-down movement are realized at the same time, and the rapid displacement is facilitated.
Further, the three-dimensional displacement system further comprises a programming controller 9, and the programming controller 9 is electrically connected to the level adjustment device and the height adjustment device for controlling the level adjustment device and the height adjustment device to move. So as to program and control the horizontal adjusting device and the height adjusting device.
In addition, in the present embodiment, the beam focusing system 5 includes either a focusing lens or a microobjective. So as to facilitate focusing of the light beam.
The adsorption stage 7 comprises a ceramic vacuum adsorption stage. The brittle material 6 is conveniently adsorbed on the vacuum adsorption table, and the lower surface of the brittle material is ensured not to warp during processing.
The beam focusing system 5 and the adsorption stage 7 may be provided alternatively or simultaneously, and are not particularly limited.
In addition, the lens in the beam focusing system 5 is an aspherical lens with an aspherical lens having an aspherical refractive index (NA) > 0.5, so that a small focal depth and a small focal point (diameter < 5 μm, < 4 μm or < 3 μm) can be achieved, and the brittle material 6 can be processed in a small range, thereby forming a small damaged layer.
In this embodiment, the laser system, the beam focusing system 5 and the three-dimensional displacement system together form a processing group, and the processing group is provided with a plurality of processing groups, and simultaneously processes the wafer to be processed on the adsorption table 7, thereby improving the processing rate.
Based on the brittle material natural fracture device 100, the present disclosure proposes a method comprising the following steps:
s10, placing the brittle material on the adsorption table;
s20, controlling the laser system to generate the light beam, and controlling the light beam to focus to form the focus so that the focus is positioned on the brittle material;
s30, adjusting the relative position between the adsorption table and the light beam focusing system so that the focus moves and scans on the brittle material.
In the present embodiment, the brittle material is large in hardness and brittleness, and the brittle material 6 includes silicon carbide, gallium nitride, diamond, a material composed of group IV elements, group III elements, and group V elements, or a material composed of group II elements and group VI elements.
The diameter of the focal spot is any one of < 5 μm, < 4 μm or < 3 μm. To create a momentary high temperature within the material to vaporize the material at the focal point.
The focal point is at a distance of any one of 500 μm, 250 μm or 175 μm from the bearing surface. So that the surface of the brittle material is first warped.
It should be noted that, among the three related technical features of the brittle material, the focal diameter and the focal distance, the brittle material, the focal diameter and the focal distance may exist alternatively or simultaneously, and are not particularly limited herein.
Further, in this embodiment, the focal point is moved and scanned on the brittle material, so as to form a plurality of scan paths arranged at intervals, a scan interval is formed between the plurality of scan paths, and the plurality of scan paths are arranged to completely cover the brittle material;
wherein the shape of the scan path includes: circular, oval, circular, rectangular, or parallel linear.
Specifically, the scanning interval is any one of 200 μm, 100 μm, 50 μm, 25 μm, 12.5 μm, or 5 μm.
The moving speed of the moving scan is any one of 1000mm/s, 500mm/s, 200mm/s, 100mm/s, 50mm/s, 20mm/s or 10mm/s.
The two related technical features of the mobile scanning may alternatively exist or may exist at the same time, which is not particularly limited herein.
Based on the brittle material natural splinter device 100 described above, the present disclosure proposes a specific embodiment,
after the pulse laser beam is expanded, the pulse laser beam is reflected and loaded to a beam focusing system 5 through a first dichroic mirror 4, then is incident on the upper surface of the polished brittle material, and the laser focus is determined according to imaging of an illumination system, wherein the laser focus is positioned at a certain thickness from the surface of the material. The single-beam scanning adopted by the scanning can also adopt a multi-beam parallel processing mode to improve the production efficiency.
Due to the characteristic of high peak power of the pulse laser, instantaneous high temperature can be generated at the focus in the material to evaporate the material to generate steam, the steam is continuously diffused around a scribing line in the laser scanning process, the laser scanning interval is strictly controlled, the material is scanned in stages, the laser is warped at the first scanning position due to accumulation of the steam, after the laser scanning is finished, the whole upper surface of the brittle material 6 is warped, the material realizes natural splitting, the subsequent steps of attaching a polymer on the surface, quick cooling and the like in the laser cold cracking step are not needed, and the production efficiency is greatly improved while the production steps are simplified.
Referring to fig. 2 to 4, in the first embodiment provided in the present disclosure, in the case of the first parallel line type scanning, the scanning is sequentially performed from left to right during the laser scanning, and in the case of the first scanning, the material vapor is continuously accumulated, and warpage occurs first at the left end. After the scanning is completed, the upper surface of the material is completely warped, and natural splintering can occur without the use of external forces.
Referring to fig. 5 to 7, in the second embodiment provided in the present disclosure, in the second type of circular scanning, during the laser scanning, the scanning is sequentially performed from the outside to the inside, and in the first scanning, the material vapor is continuously accumulated, and warpage occurs first in the outermost ring of the material. After the scanning is finished, the material is completely warped from outside to inside, and the material can be naturally cracked under the condition that no external force is used.
Referring to fig. 8, in the third embodiment provided in the present disclosure, in the second type of circular scanning, a multi-beam parallel processing manner may be adopted to improve the production efficiency.
The disclosure will be further described in detail with reference to specific examples, taking third generation brittle semiconductor silicon carbide materials as examples,
embodiment 1, please refer to fig. 2-4, using parallel line scanning.
S1, obtaining a silicon carbide wafer 6 which is 4H-SiC or 6H-SiC, wherein the silicon carbide 6 is 4 inches or 6 inches or 8 inches in size and has a thickness of 1mm or 500 mu m or 350 mu m.
S2, the wavelength of the pulse laser 1 is 1064nm or 1030nm or 800nm or 532nm, the repetition frequency is 1MHz or 500kHz or 250kHz, the power is 20W or 10W or 5W or 2.5W or 1W, the pulse is selected to be single pulse, double pulse or multiple pulse, the pulse width is selected to be nanosecond or subnanosecond or picosecond or subpicosecond or femtosecond, the diameter of the laser beam 3 passing through the beam expansion system 2 is limited by the beam focusing system 5, and the clear aperture of the beam focusing system 5 is met.
S3, after being reflected by the first dichroic mirror 4, the laser beam 3 enters the beam focusing system 5 to focus the laser, the focused laser is focused at a certain thickness position of the silicon carbide wafer from the upper surface, and the thickness is determined according to the monitoring device 13 and the three-dimensional displacement system lifting table 10, and is 500 mu m, 250 mu m or 175 mu m.
S4, adopting parallel line type scanning, strictly controlling the scanning interval, wherein the scanning interval can be 200 mu m or 100 mu m or 50 mu m or 25 mu m or 12.5 mu m or 5 mu m. In a three-dimensional displacement system, the speed of the translation stage 8 may be 1000mm/s or 500mm/s or 200mm/s or 100mm/s or 50mm/s or 20mm/s or 10mm/s.
S5, after the laser scanning is completed, the upper surface 6' of the material is completely warped, and the fracture can occur under the condition that no external force is used.
S6, after the material is naturally cracked under the action of pulse laser, the warped part of the upper surface 6' needs to be subjected to hot pressing and polishing processes or other processes, so that the material becomes a commercial wafer capable of extending, and the roughened part of the lower surface 6″ needs to be subjected to polishing, so that the scattering of laser is reduced and the transmission is increased. For the next time, the laser process is ready.
On the basis of embodiment 1, the present disclosure also provides an embodiment 2, please refer to fig. 9.
In S5, when the scanning is completed, there may be a phenomenon that there is no natural fracture, and in the last scanning or the first scanning position of the wafer, there is a situation that the upper surface and the lower surface are connected, and a wedge device needs to be inserted for separation.
S5, at the position of the warping position of the upper surface 6' of the silicon carbide, inserting a wedge-shaped device with curvature into the warping position of the material by using an electric displacement device, wherein the curvature of the wedge-shaped device is designed according to the size of a sample and the warping degree through calculation, the curvature can be 2m < -1 >, 1m < -1 >, 0.5m < -1 >, or 0.25m < -1 >, the wedge-shaped device adopts the material on the premise that the interior of a wafer cannot be damaged secondarily, the speed and the force of the electric displacement device are strictly controlled, the speed can be 10mm/S, 5mm/S, 2mm/S, 1mm/S, 0.5mm/S, 0.2mm/S or 0.1mm/S, and the force can be 50N, 25N, 12N or 5N, so that the material can be separated up and down.
Embodiment 3, please refer to fig. 5-7, using circular-type scanning.
In this embodiment, the same parts as those in embodiment 1 are not described here.
S4, scanning in a circular shape, wherein the scanning interval 17 is strictly controlled, and the scanning interval 17 can be 200 mu m or 100 mu m or 50 mu m or 25 mu m or 12.5 mu m or 5 mu m. The speed of the translation stage 8 may be 1000mm/s or 500mm/s or 200mm/s or 100mm/s or 50mm/s or 20mm/s or 10mm/s.
S5, firstly, warping occurs on the surface of the outer part of the laser scanning wafer; after the laser scanning is completed, the upper surface 6' of the material has been completely warped and can be broken without using an external force.
For purposes of describing the present disclosure in more detail, a third generation semiconductor gallium nitride is taken as an example.
Example 4, using a parallel line scan,
s1, obtaining a gallium nitride wafer 6, wherein the gallium nitride wafer 6 is 4 inches or 6 inches in size and 1mm or 500 mu m or 350 mu m in thickness.
S2, the wavelength of the pulse laser 1 is 1064nm or 1030nm or 800nm or 532nm, the repetition frequency is 1MHz or 500kHz or 250kHz, the power is 20W or 10W or 5W or 2.5W or 1W, the pulse is selected to be single pulse, double pulse or multiple pulse, the pulse width is selected to be nanosecond or subnanosecond or picosecond or subpicosecond or femtosecond, the diameter of the laser beam 3 passing through the beam expanding system 2 is limited by the beam focusing system 5, and the clear aperture of the focusing system is met.
S3, after being reflected by the first dichroic mirror 4, the laser beam 3 enters the beam focusing system 5 to focus the laser, the focused laser is focused at a certain thickness position of the gallium nitride wafer, which is away from the upper surface, and the thickness is determined according to the monitoring device 13 and the three-dimensional displacement system lifting table 10, and is 500 mu m, 250 mu m or 175 mu m.
S4, adopting parallel line type scanning, strictly controlling the scanning interval, wherein the scanning interval can be 200 mu m or 100 mu m or 50 mu m or 25 mu m or 12.5 mu m or 5 mu m. The speed of the XY axis 8 of the three-dimensional displacement system may be 1000mm/s or 500mm/s or 200mm/s or 100mm/s or 50mm/s or 20mm/s or 10mm/s.
S5, firstly warping the surface at the left end position of laser scanning; after the laser scanning is completed, the upper surface 6' of the material has been completely warped and can be broken without using an external force.
S6, after the material is naturally cracked under the action of pulse laser, the warped part of the upper surface 6' needs to be subjected to hot pressing and polishing processes or other processes, so that the material becomes a commercial wafer capable of extending, and the roughened part of the lower surface 6″ needs to be subjected to polishing, so that the scattering of laser is reduced and the transmission is increased. For the next time, the laser process is ready.
On the basis of embodiment 4, the present disclosure also provides an embodiment 5.
S5, at the position of the warping position of the upper surface 6' of the gallium nitride, inserting a wedge-shaped device with curvature into the warping position of the material by using an electric displacement device, wherein the curvature of the wedge-shaped device is designed according to the size of a sample and the warping degree through calculation, the curvature can be 2m < -1 >, 1m < -1 >, 0.5m < -1 >, or 0.25m < -1 >, the wedge-shaped device adopts the material on the premise that the interior of a wafer cannot be damaged secondarily, the speed and the force of the electric displacement device are strictly controlled, the speed can be 10mm/S, 5mm/S, 2mm/S, 1mm/S, 0.5mm/S, 0.2mm/S or 0.1mm/S, and the force can be 50N, 25N, 12N or 5N, so that the material can be separated up and down.
Example 6, circular zig-zag scanning was used.
In this embodiment, the same parts as those in embodiment 1 are not described here again.
S4, scanning in a circular shape, wherein the scanning interval 17 is strictly controlled, and the scanning interval 17 can be 200 mu m or 100 mu m or 50 mu m or 25 mu m or 12.5 mu m or 5 mu m. The speed of the XY axis 8 of the three-dimensional displacement system may be 1000mm/s or 500mm/s or 200mm/s or 100mm/s or 50mm/s or 20mm/s or 10mm/s.
S5, firstly, warping occurs on the surface of the outer part of the laser scanning wafer; after the laser scanning is completed, the upper surface 6' of the material has been completely warped and can be broken without using an external force.
While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be understood that the foregoing embodiments are merely illustrative of the invention and are not intended to limit the invention, and that any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.

Claims (10)

1. A brittle material natural splinter device, comprising:
the upper end surface of the adsorption table is provided with a bearing surface;
the laser system is arranged on the upper side of the adsorption table and is provided with an emergent part which is arranged towards the bearing surface, and the laser system is used for generating light beams and emergent the light beams to the bearing surface;
the beam focusing system is arranged between the laser system and the adsorption table and is positioned on the optical path of the light beam and used for focusing the light beam to form a focus; the method comprises the steps of,
the three-dimensional displacement system is arranged between the adsorption table and the light beam focusing system and used for adjusting the relative position between the adsorption table and the light beam focusing system;
the high-energy pulse laser is focused inside the brittle material, when the power density at the focal point reaches a certain value, the material is gasified to form steam, and natural splinter of the material is realized through expansion of the steam.
2. The brittle material natural fracture apparatus according to claim 1, wherein the laser system comprises:
the pulse laser is arranged on the upper side of the adsorption table and provided with a transmitting end facing the upper side of the adsorption table, and the transmitting end is used for transmitting laser;
the beam expanding system is arranged on the light path of the laser and used for expanding the laser to obtain a beam; the method comprises the steps of,
the first dichroic mirror is provided with a reflecting surface, the first dichroic mirror is arranged between the beam expanding system and the adsorption table, the reflecting surface is used for reflecting the light beam to the bearing surface, and the reflecting surface forms the emergent part.
3. The brittle material natural splinter device of claim 2, wherein the first dichroic mirror has an entrance surface disposed opposite the reflecting surface;
the brittle material splitting device also comprises a monitoring device, wherein the monitoring device is provided with an imaging part, and the imaging part is positioned above the first dichroic mirror and is positioned on the reverse extension light path of the first dichroic mirror.
4. The brittle material natural breaking device according to claim 3, further comprising an illumination system provided on an upper side of the adsorption table, the illumination system comprising:
a half-mirror arranged on the reverse extension light path of the first dichroic mirror; the method comprises the steps of,
the light-emitting device is used for emitting illumination light to the half-mirror;
the reflection light path of the half mirror and the reverse extension light path of the first dichroic mirror are positioned on the same axis, and the imaging part is positioned above the half mirror and on the reverse extension light path of the half mirror.
5. The brittle material natural fracture apparatus according to claim 2, wherein the pulsed laser has a pulse form comprising any of single pulse, double pulse or multiple pulses; and/or the number of the groups of groups,
the pulse width of the pulse laser comprises any one of nanoseconds, sub-nanoseconds, picoseconds, sub-picoseconds and femtoseconds; and/or the number of the groups of groups,
the beam expanding system comprises any one of a single lens system, a single beam expander system, a multi-lens system or an optical 4f system.
6. The brittle material natural fracture apparatus according to claim 1, wherein the three-dimensional displacement system comprises:
the horizontal adjustment device comprises a translation table, wherein the translation table has a movable stroke horizontally moving along the front, back, left and right directions;
the height adjusting device comprises a lifting table, wherein the lifting table is provided with a movable stroke moving up and down; the method comprises the steps of,
the programming controller is electrically connected to the horizontal adjusting device and the height adjusting device;
the absorption table is arranged on the translation table, the light beam focusing system is arranged on the lifting table, and the programming controller is used for controlling the horizontal adjusting device and the height adjusting device to move.
7. A method for natural breaking of brittle material, characterized in that it is applied to a device for natural breaking of brittle material according to any of claims 1 to 6, comprising the steps of:
placing the brittle material on the adsorption stage;
controlling the laser system to generate the light beam, and controlling the light beam to focus to form the focus so that the focus is positioned on the brittle material;
and adjusting the relative position between the adsorption table and the light beam focusing system so that the focus moves and scans on the brittle material.
8. The method of natural cracking of a brittle material according to claim 7, wherein the brittle material comprises any one of silicon carbide, gallium nitride, diamond, a group IV element, a material composed of group II and group V elements, or a material composed of group II and group VI elements; and/or the number of the groups of groups,
the diameter of the focus is any one of < 5 mu m, < 4 mu m or < 3 mu m; and/or the number of the groups of groups,
the focal point is at a distance of any one of 500 μm, 250 μm or 175 μm from the bearing surface.
9. The method of claim 7, wherein the focal point is moved and scanned on the brittle material to form a plurality of scan paths arranged at intervals, a scan interval is formed between a plurality of scan paths, and a plurality of scan paths are arranged to completely cover the brittle material;
wherein the shape of the scan path includes: circular, oval, circular, rectangular, or parallel linear.
10. The method of natural cracking of a brittle material according to claim 9, wherein the scan interval is any of 200 μm, 100 μm, 50 μm, 25 μm, 12.5 μm or 5 μm; and/or the number of the groups of groups,
the moving speed of the moving scan is any one of 1000mm/s, 500mm/s, 200mm/s, 100mm/s, 50mm/s, 20mm/s or 10mm/s.
CN202111593358.6A 2021-12-23 2021-12-23 Brittle material natural cracking device and method thereof Pending CN116329781A (en)

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