CN116295967B - High-voltage MEMS pressure sensor chip and preparation method of chip and sensor - Google Patents
High-voltage MEMS pressure sensor chip and preparation method of chip and sensor Download PDFInfo
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- CN116295967B CN116295967B CN202310579328.2A CN202310579328A CN116295967B CN 116295967 B CN116295967 B CN 116295967B CN 202310579328 A CN202310579328 A CN 202310579328A CN 116295967 B CN116295967 B CN 116295967B
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention provides a high-voltage MEMS pressure sensor chip, a chip and a preparation method of a sensor, which are applied to the technical field of sensitive elements and sensors, wherein the front surface of a chip main body is square, four element blocks are distributed on the chip main body, each element block comprises a connecting terminal, a metal block and a resistor connecting piece, the resistor connecting pieces are connected through the metal block in one element block to form a communicating body, two ends of the communicating body are all the resistor connecting pieces, one end of the communicating body is connected with the connecting terminal, and the other end of the communicating body is connected with the connecting terminal of an adjacent element block; the connection terminal of any one of the four element blocks is disconnected, so that the four element blocks form an open-loop Wheatstone bridge structure through five connection terminals; the preparation method of the chip is used for preparing the high-pressure MEMS pressure sensor chip; the preparation method of the sensor is used for connecting the high-voltage MEMS pressure sensor chip with the pressure sensing element.
Description
Technical Field
The invention belongs to the technical field of sensitive elements and sensors, and particularly relates to a high-voltage MEMS pressure sensor chip and a preparation method of the chip and the sensor.
Background
The pressure sensor is a device capable of converting a pressure load signal into an electric signal, and the technical route adopted by the pressure sensor is different according to the pressure load loaded in an actual application scene.
The high pressure sensor with pressure load of 10-300MPa adopts metal (such as stainless steel) as pressure sensing element, and adopts sputtering film resistance material or glass sintering silicon MEMS chip to make sensitive element on the pressure sensing element to realize the function of converting pressure load into electric signal. Compared with the high-pressure sensor with high cost and high process difficulty of the sputtered film, the glass micro-melting pressure sensor based on the process of the silicon MEMS chip is a common technology because the glass micro-melting pressure sensor can be compatible with an IC process and has the advantages of low cost, low process difficulty and the like.
The key point of the glass micro-melting pressure sensor is the design of the MEMS chip, and in the prior art, for example, the invention patent with publication number CN114136202a is named: the MEMS chip of the strain gauge and strain measurement assembly adopts a Wheatstone half-bridge design, namely, a single MEMS chip is provided with two resistors and three input/output terminals. When the sensor is manufactured, two MEMS chips are required to be attached to the metal pressure sensing element to form a Wheatstone full bridge structure, so that the detection of external pressure load is realized.
However, the above solution has certain drawbacks: firstly, two MEMS chips are required to be respectively attached, so that the attaching and positioning difficulty is high, and the phenomenon of poor consistency of products caused by the deviation of attaching positions of the MEMS chips is easy to occur; secondly, the front surface graph of the chip in the scheme is rectangular, and a short side exists, so that the scheme is not beneficial to automatic mounting of the chip because the front surface graph is limited by the size of a clamping jaw of automatic mounting equipment, and in the conventional process flow, the mounting procedure of the scheme needs manual mounting by workers, and the mounting efficiency is low; third, the MEMS chip in the above solution requires the use of {100} epitaxial wafers instead of the commonly used {100} wafers, which also increases the potential processing cost of the chip.
Therefore, there is a need to propose a MEMS chip structure, thereby improving the above drawbacks.
Disclosure of Invention
In view of the problems in the prior art, the invention aims to provide a high-voltage MEMS pressure sensor chip, a chip and a preparation method of the sensor, wherein the cross section of the chip is square through structural design, so that the automatic mounting process is facilitated; the chip with the Wheatstone full-bridge structure is utilized, so that only one chip is needed for preparing the sensor, and the problem of positioning deviation caused by mounting two chips is avoided.
The high-voltage MEMS pressure sensor chip comprises a chip main body, wherein the chip main body comprises a substrate layer, a resistor layer, a dielectric layer, a masking layer and a metal layer, the resistor layer is positioned above the substrate layer, the resistor layer is formed by doping ions on the substrate layer, the dielectric layer is positioned above the resistor layer and is used for shielding the influence of the external environment on an internal resistor structure, lead holes are formed in corresponding positions on the dielectric layer and the masking layer, the metal layer is positioned above the masking layer, the metal layer is connected with the resistor layer through the lead holes, and the metal layer comprises at least one connecting terminal used for being connected with the outside;
the front surface of the chip main body is square, four element blocks are distributed on the chip main body, the element blocks are respectively positioned at corners of the chip main body, each element block comprises a connecting terminal, at least one metal block and at least one resistor connecting piece, the metal blocks are positioned in the metal layers, and the resistor connecting pieces are positioned in the resistor layers;
in one element block, the resistor connecting pieces are connected through metal blocks to form a communicating body in the element block, and the two ends of the communicating body are both resistor connecting pieces, wherein one end of each connecting piece is connected with a connecting terminal, and the other end of each connecting piece is connected with a connecting terminal of an adjacent element block;
the connection terminal of any one of the four element blocks is disconnected, so that the four element blocks form an open loop wheatstone bridge structure through five connection terminals.
Preferably, the four element blocks are divided into an element block one, an element block two, an element block three and an element block four, wherein two adjacent element blocks in the element block one, the element block two and the element block three are communicated through connection of a resistor connecting piece and a connecting terminal.
Preferably, the dielectric layer is silicon oxide, and the masking layer is silicon nitride.
A second object of the present invention is to provide a method for manufacturing a high-pressure MEMS pressure sensor chip, for manufacturing the high-pressure MEMS pressure sensor chip, comprising the steps of:
s1, selecting a wafer with a {100} crystal face as a substrate layer;
s2, doping ions on the substrate layer to form a resistance layer, so that the longitudinal direction of the resistance layer is two mutually perpendicular <110> directions;
s3, preparing a dielectric layer on the resistor layer;
s4, preparing a masking layer on the dielectric layer;
s5, forming lead holes at corresponding positions of the dielectric layer and the masking layer;
s6, preparing a metal layer above the masking layer;
s7, carrying out front etching on one side of the substrate layer to form a frame structure of the chip, wherein the front etching depth is 8-20 mu m;
and S8, back etching is carried out on the other side of the substrate layer, wherein the back etching depth=the thickness of the substrate layer-the front etching depth+delta, and delta=1-10 mu m.
Preferably, the preparation method of the resistor layer specifically comprises the following steps: boron ions are doped on the substrate layer by an epitaxial or ion implantation method, and the resistivity of the doped substrate layer is 0.01-0.1 omega cm, so that the resistor layer is formed, wherein the doping type is light doping.
Preferably, the dielectric layer is prepared by a thermal oxidation method or a chemical vapor deposition method, and the thickness of the dielectric layer is 200-1000nm.
Preferably, the masking layer is prepared by chemical vapor deposition.
Preferably, the lead hole is prepared by dry etching or wet etching; the metal layer is prepared by a physical vapor deposition method or a magnetron sputtering method.
The third object of the present invention is to provide a method for manufacturing a high-voltage MEMS pressure sensor, wherein the high-voltage MEMS pressure sensor chip is connected with a pressure sensing element, and the method specifically comprises the following steps:
printing glass paste on the edge of the pressure sensing surface of the pressure sensing element;
then sintering for the first time to volatilize the solvent and the additive in the glass slurry to form a glass layer;
attaching the chip body to the upper part of the glass layer;
and finally, performing secondary sintering to soften the glass layer, naturally sinking the chip main body into the glass layer under the action of gravity, and controlling the sintering temperature to fix the chip main body into the glass layer.
The beneficial effects of the invention are as follows: according to the preparation method of the high-voltage MEMS pressure sensor chip, the chip and the sensor, the common {100} wafer is adopted as a substrate layer for processing, so that the manufacturing cost of a chip main body can be reduced, the MEMS chip with a Wheatstone full-bridge structure is formed through structural design, the defect that two MEMS Wheatstone half-bridge chips are required in the preparation of the existing sensor is overcome, and the positioning difficulty of the chip main body is lower in the processing process; in addition, the cross section of this chip main part is the square, is favorable to matching automatic mounting equipment's clamping jaw, can realize automatic mounting, can reduce the cost of labor, improves production efficiency.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a top view of a chip body of the present invention;
FIG. 2 is a block diagram of a chip body according to the present invention;
FIG. 3 is a schematic diagram of the substrate layer in step S1 of the present invention;
FIG. 4 is a schematic diagram of the resistor layer manufactured in the step S2 of the present invention;
FIG. 5 is a schematic diagram of the dielectric layer obtained in step S3 of the present invention;
FIG. 6 is a schematic diagram of the masking layer manufactured in step S4 of the present invention;
FIG. 7 is a schematic diagram of the present invention after the lead holes are opened in step S5;
FIG. 8 is a schematic diagram of the metal layer obtained in step S6 of the present invention;
FIG. 9 is a schematic diagram of a chip manufactured in step S8 of the present invention;
FIG. 10 is a schematic diagram showing a structure of a pressure sensing element and a chip body of the present invention;
fig. 11 is a cross-sectional view of a sensor of the present invention.
Marked in the figure as: 100. a first element block; 200. a second element block; 300. a component block III; 400. a component block IV; 1. a base layer; 2. a resistive layer; 201. a resistor connection; 3. a dielectric layer; 4. a masking layer; 5. a metal layer; 501. a metal block; 502. a connection terminal; 6. a lead hole; 10. a pressure sensing element; 1001. a pressure sensing surface; 1002. a pressure load loading surface; 11. a glass layer; 12. a chip body.
Detailed Description
Example 1
As shown in fig. 9, a high-voltage MEMS pressure sensor chip includes a chip body 12, the chip body 12 including a base layer 1, a resistive layer 2, a dielectric layer 3, a masking layer 4, and a metal layer 5. Wherein, resistive layer 2 is located the top of base member layer 1, resistive layer 2 is formed through doping ion on base member layer 1, dielectric layer 3 is located the top of resistive layer 2, mask layer 4 is located the top of dielectric layer 3 for shielding external environment to the influence of internal resistance structure, lead wire hole 6 has been seted up to dielectric layer 3, mask layer 4 upper position department, metal layer 5 is located mask layer 4's top, metal layer 5 passes through lead wire hole 6 and is connected with resistive layer 2, five connection terminals 502 that are used for being connected with the external world have been distributed on the metal layer 5, in one embodiment, dielectric layer 3 is silicon oxide, mask layer 4 is silicon nitride.
As shown in fig. 1 and 2, the front surface of the chip main body 12 is square, four element blocks are distributed on the chip main body 12 and are respectively located at corners of the chip main body 12, the element blocks comprise a connection terminal 502, at least one metal block 501 and at least one resistor connection piece 201, wherein the metal block 501 is located inside the metal layer 5, the resistor connection piece 201 is located inside the resistor layer 2, and the resistor connection piece 201 is connected with the metal block 501, so that the four element blocks form an open loop wheatstone bridge structure through five connection terminals 502. The structure can be applied in a specified scene, and can output two groups of Wheatstone bridge signals, including a half-bridge signal and a full-bridge signal.
Specifically, as shown in fig. 2, the four device blocks are divided into a device block one 100, a device block two 200, a device block three 300 and a device block four 400, wherein two adjacent device blocks in the device block one 100, the device block two 200 and the device block three 300 are communicated through the connection of the resistor connection 201 and the connection terminal 502.
As shown in fig. 1, in one element block, the resistor connectors 201 are connected through metal blocks 501 to form a communicating body in the element block, and two ends of the communicating body are resistor connectors 201, wherein one end of each communicating body is connected with a connecting terminal 502, and the other end of each communicating body is connected with a connecting terminal 502 of an adjacent element block, and the middle of the connecting terminal 502 of any element block in the four element blocks is disconnected.
Example two
As shown in fig. 3 to 9, a second object of the present invention is to provide a method for manufacturing a high-pressure MEMS pressure sensor chip, for manufacturing the high-pressure MEMS pressure sensor chip, comprising the steps of:
s1, selecting a wafer with a {100} crystal face as a substrate layer 1; the resistivity of the wafer is 1-20Ω·cm.
S2, doping ions on the substrate layer 1 to form a resistor layer 2, so that the longitudinal direction of the resistor layer 2 is two mutually perpendicular<110>Specifically, after etching in step S7, a part of the resistive layer 2 is etched away, and the resistive connection member 201 is formed in the four element blocks. As shown in fig. 1 and 2, the adjacent element blocks have two mutually perpendicular longitudinal directions of the resistive connection member 201 (i.e., the directions along the rectangular length of the resistive connection member 201)<110>The direction is: for example, element block one 100 and element block three 300, with the internal resistance connection 201 having a longitudinal direction of [110 ]]Element block two 200 and element block four 400, the longitudinal direction of the internal resistance connection 201 is. Wherein [110 ]]Crystal orientation and->The crystal directions are mutually perpendicular<110>The direction of the crystal orientation group. The preparation method of the resistor layer 2 specifically comprises the following steps: boron ions are doped on the substrate layer 1 by an epitaxy or ion implantation method, and the resistivity of the doped substrate layer 1 is 0.01-0.1 omega cm, so that the resistor layer 2 is formed, wherein the doping type is light doping.
S3, preparing a dielectric layer 3 on the resistor layer 2; the dielectric layer 3 is prepared by a thermal oxidation method or a chemical vapor deposition method, and the thickness of the dielectric layer 3 is 200-1000nm.
S4, preparing a masking layer 4 on the dielectric layer 3; the masking layer 4 is prepared by chemical vapor deposition.
S5, forming lead holes 6 at corresponding positions of the dielectric layer 3 and the masking layer 4; the lead holes 6 may be prepared by dry etching or wet etching.
S6, preparing a metal layer 5 above the masking layer 4; the metal layer 5 may be prepared by a physical vapor deposition method or a magnetron sputtering method.
S7, carrying out front etching on one side of the substrate layer 1 to form a frame structure of the chip main body 12, wherein four element blocks are distributed on the chip main body 12, each element block comprises a connecting terminal 502, a metal block 501 and a resistance connecting piece 201, the metal block 501 is connected with the resistance connecting piece 201, the four element blocks form an open loop type Wheatstone bridge structure through five connecting terminals 502, and specifically, the metal layer 5 forms the metal block 501 and the connecting terminal 502 through etching; the resistor layer 2 is etched to form a resistor connecting piece 201, and the etching depth of the front surface is 8-20 mu m;
and S8, back etching is performed on the other side of the substrate layer 1, wherein the back etching depth=the thickness of the substrate layer 1, the front etching depth and delta, wherein delta=1-10 mu m, the front etching is selective etching to form an etching pattern, the back etching is overall etching without patterns, delta is set so that the sum of the front etching depth and the back etching depth of the patterned part is larger than the thickness of the substrate layer 1, and the patterned part is ensured to be completely etched, so that the chip is separated from the wafer.
Example III
As shown in fig. 10 and 11, a third object of the present invention is to provide a method for manufacturing a high-voltage MEMS pressure sensor, wherein the high-voltage MEMS pressure sensor chip is connected to a pressure sensing element 10, and specifically includes the following steps:
as shown in fig. 10, the pressure sensing element 10 adopts a circular cup-shaped diaphragm structure, and includes a pressure sensing surface 1001 and a pressure load loading surface 1002, where the pressure sensing surface 1001 and the pressure load loading surface 1002 are both circular and concentric with equal diameters. The glass paste is printed on the edge of the pressure sensing surface 1001 of the pressure sensing element 10, and the printing mode is steel screen printing, and since the high-pressure MEMS pressure sensor chip of the present invention adopts a wafer with {100} crystal face, the placement position of the chip main body 12 is the position with the largest absolute value of differential stress, and therefore the chip main body 12 needs to be placed on the edge of the pressure sensing surface 1001.
Then sintering for the first time to volatilize the solvent and the additive in the glass slurry to form a glass layer 11; the sintering temperature is 450-600 ℃.
As shown in fig. 11, the chip body 12 is then attached over the glass layer 11;
finally, sintering is carried out for the second time, the sintering temperature is 450-600 ℃, the glass layer 11 is softened, the chip main body 12 naturally sinks into the glass layer 11 under the action of gravity, and the chip main body 12 is fixed in the glass layer 11 by controlling the sintering temperature.
The foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. The high-voltage MEMS pressure sensor chip is characterized by comprising a chip main body (12), wherein the chip main body (12) comprises a substrate layer (1), a resistor layer (2), a medium layer (3), a masking layer (4) and a metal layer (5), the resistor layer (2) is positioned above the substrate layer (1), the resistor layer (2) is formed by doping ions on the substrate layer (1), the medium layer (3) is positioned above the resistor layer (2), the masking layer (4) is positioned above the medium layer (3) and is used for shielding the influence of the external environment on an internal resistor structure, lead holes (6) penetrating through the medium layer (3) and the masking layer (4) are formed in the medium layer (3) and the masking layer (4), the metal layer (5) is positioned above the masking layer (4), the metal layer (5) is connected with the resistor layer (2) through the lead holes (6), and at least one connecting terminal (502) used for being connected with the external environment is distributed on the metal layer (5).
The front surface of the chip main body (12) is square, four element blocks are distributed on the chip main body (12), the element blocks are respectively located at corners of the chip main body (12), each element block comprises a connecting terminal (502), at least one metal block (501) and at least one resistor connecting piece (201), the metal block (501) is located in the metal layer (5), and the resistor connecting pieces (201) are located in the resistor layer (2);
in one element block, the resistor connectors (201) are connected through metal blocks (501) to form a communicating body in the element block, and the two ends of the communicating body are the resistor connectors (201), wherein one end of each communicating body is connected with a connecting terminal (502), and the other end of each communicating body is connected with the connecting terminal (502) of the adjacent element block;
wherein, the connection terminal (502) of any one of the four element blocks is disconnected in the middle, so that the four element blocks form an open loop Wheatstone bridge structure through five connection terminals (502);
the four element blocks are divided into an element block one (100), an element block two (200), an element block three (300) and an element block four (400), wherein two adjacent element blocks in the element block one (100), the element block two (200) and the element block three (300) are communicated through connection of a resistor connecting piece (201) and a connecting terminal (502).
2. The high-voltage MEMS pressure sensor chip according to claim 1, wherein the dielectric layer (3) is silicon oxide and the masking layer (4) is silicon nitride.
3. A method for manufacturing a high-pressure MEMS pressure sensor chip according to any one of claims 1 to 2, comprising the steps of:
s1, selecting a wafer with a {100} crystal face as a substrate layer (1);
s2, doping ions on the substrate layer (1) to form a resistor layer (2);
s3, preparing a dielectric layer (3) on the resistor layer (2);
s4, preparing a masking layer (4) on the dielectric layer (3);
s5, forming lead holes (6) penetrating through the dielectric layer (3) and the masking layer (4) on the dielectric layer (3) and the masking layer (4);
s6, preparing a metal layer (5) above the masking layer (4);
s7, carrying out front etching on one side of a substrate layer (1) to form a frame structure of a chip main body (12), wherein four element blocks are distributed on the chip main body (12) and comprise connecting terminals (502), metal blocks (501) and resistance connecting pieces (201), the metal blocks (501) are connected with the resistance connecting pieces (201), the four element blocks form an open loop type Wheatstone bridge structure through five connecting terminals (502), the front etching is patterned selective etching, and the front etching depth is 8-20 mu m;
and S8, back etching is carried out on the other side of the substrate layer (1), wherein the back etching is pattern-free integral etching, and the back etching depth=the thickness of the substrate layer (1) -the front etching depth+delta, wherein delta=1-10 mu m.
4. A method for manufacturing a high voltage MEMS pressure sensor chip according to claim 3, characterized in that the method for manufacturing the resistive layer (2) specifically comprises: boron ions are doped on the substrate layer (1) by an epitaxy or ion implantation method, and the doped substrate layer (1) has the resistivity of 0.01-0.1 omega cm, so that the resistor layer (2) is formed, wherein the doping type is light doping.
5. A method of manufacturing a high pressure MEMS pressure sensor chip according to claim 3, characterized in that the dielectric layer (3) is manufactured by thermal oxidation or chemical vapor deposition, the thickness of the dielectric layer (3) being 200-1000nm.
6. A method of manufacturing a high pressure MEMS pressure sensor chip according to claim 3, characterized in that the masking layer (4) is manufactured by chemical vapor deposition.
7. A method of manufacturing a high voltage MEMS pressure sensor chip according to claim 3, characterized in that the lead holes (6) are manufactured by dry etching or wet etching; the metal layer (5) is prepared by a physical vapor deposition method or a magnetron sputtering method.
8. A method for manufacturing a high-pressure MEMS pressure sensor, characterized in that a high-pressure MEMS pressure sensor chip according to any one of claims 1 to 2 is connected to a pressure sensing element (10), comprising in particular the steps of:
printing glass paste on the edge of a pressure sensing surface (1001) of the pressure sensing element (10);
then sintering for the first time to volatilize the solvent and the additive in the glass slurry to form a glass layer (11);
attaching the chip main body (12) to the upper part of the glass layer (11);
and finally, performing secondary sintering to soften the glass layer (11), naturally sinking the chip main body (12) into the glass layer (11) by the action of gravity, and fixing the chip main body (12) into the glass layer (11) by controlling the sintering temperature.
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