CN116295894A - Temperature measuring instrument and measuring method based on diode junction capacitance characteristics - Google Patents
Temperature measuring instrument and measuring method based on diode junction capacitance characteristics Download PDFInfo
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- CN116295894A CN116295894A CN202310052687.2A CN202310052687A CN116295894A CN 116295894 A CN116295894 A CN 116295894A CN 202310052687 A CN202310052687 A CN 202310052687A CN 116295894 A CN116295894 A CN 116295894A
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- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000000523 sample Substances 0.000 claims abstract description 47
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 20
- 239000010935 stainless steel Substances 0.000 claims abstract description 20
- 238000009413 insulation Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 4
- 238000009529 body temperature measurement Methods 0.000 claims description 16
- 238000005259 measurement Methods 0.000 claims description 8
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2605—Measuring capacitance
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Abstract
The invention relates to a temperature measuring instrument and a measuring method based on diode junction capacitance characteristics, wherein the measuring instrument comprises a stainless steel shell, an instrument panel area, a power interface and a temperature measuring probe, the temperature measuring probe comprises a temperature measuring ball and a diode, the diode is wrapped by the temperature measuring ball, the diode is positioned at the position close to the center of the temperature measuring ball, and the temperature measuring ball is made of aluminum nitride which is a material with good heat conduction and insulation; the instrument is in a cube shape as a whole, the instrument panel area is arranged on the front face of the measuring instrument, the instrument further comprises a single chip microcomputer and a digital bridge, the single chip microcomputer is positioned on the left side of the instrument panel area, and the digital bridge is positioned on the right side of the instrument panel area. The temperature measuring instrument provided by the invention has the advantages of simple structure, low manufacturing cost, convenience for integration in an electronic circuit, capability of being directly packaged in a semiconductor component, capability of measuring the temperature of the electronic component by combining the measuring method provided by the invention, high precision, convenience for operation and the like, is beneficial to ensuring the normal operation of the electronic product, and has a larger application space in the electronic industry.
Description
Technical Field
The invention belongs to the technical field of electronic industry, and particularly relates to a temperature measuring instrument and a temperature measuring method for measuring temperature based on a diode junction capacitance effect principle.
Background
Since the 60 s of the twentieth century, the electronics industry has made great progress and has become one of the largest industries in the world. With the rapid development of the electronic industry, various electronic products have penetrated into aspects of life of people, such as mobile phones, computers, tablet computers, etc. The temperature can have a great influence on the normal operation of the electronic product, for example, a high temperature can make the electronic product not normally operate and reduce the service life of the electronic product, and a low temperature can also influence the normal operation of the electronic product. It can be seen that accurate measurement and monitoring of the temperature of electronic devices has great application value for the development of the electronic industry.
The thermal expansion and contraction type thermometer is difficult to integrate in a circuit, is uncomfortable and is used for measuring temperature of electronic components, and the thermal resistor and thermocouple thermometer commonly adopted in the market at present can be integrated in the circuit, but cannot be packaged in a semiconductor device, so that larger errors can be generated. In order to solve the problem of accurate temperature measurement of electronic devices, a new temperature measurement mode is also required to be searched from the temperature characteristics of the semiconductor element. Based on the above, there is a strong need to develop a novel temperature measuring instrument and a measuring method capable of accurately measuring the temperature of an electronic device.
Disclosure of Invention
The invention aims to provide a temperature measuring instrument based on diode temperature-varying capacitance effect and a measuring method of the temperature measuring instrument based on diode junction capacitance characteristic, so as to solve the problem that the existing electronic product cannot accurately measure temperature.
The invention aims at realizing the following technical scheme:
a temperature measuring instrument based on diode junction capacitance characteristics comprises a stainless steel shell 1; the front surface of the stainless steel shell 1 is provided with an instrument panel area 10, and the back surface of the stainless steel shell is provided with a power interface 2;
the temperature measuring probe, the digital bridge 6 and the singlechip 7 are also included; the temperature measuring probe is connected with a temperature measuring probe interface 3 arranged on the back surface of the stainless steel shell 1, and comprises a temperature measuring ball 13 and a diode 14 wrapped outside the temperature measuring ball; the digital bridge 6 and the singlechip 7 are respectively positioned at two sides of the instrument panel area 10; the digital bridge 6 is connected with the temperature measuring probe interface 3, and the external lead 11 of the temperature measuring probe is electrically connected with the diode 14; the singlechip 7 is internally provided with a relation curve of diode capacitance and temperature; during measurement, the digital bridge 6 is connected with the temperature measuring probe, the digital bridge 6 can directly measure the capacitance value of the diode 14 in the temperature measuring probe, and the singlechip 7 calculates the measured temperature according to the relation curve of the built-in diode capacitance and the temperature by using the capacitance value;
the instrument panel area 10 is integrated with a temperature display screen 8, a capacitance display screen 9, a temperature measurement button 4 and a zero setting button 5; the temperature display screen 8 is used for displaying the measured temperature; the capacitance display screen 9 is used for displaying the capacitance value measured by the digital bridge 6; the temperature measuring button 4 is used for controlling the on-off of the instrument; the zeroing button 5 is used for zeroing the digital bridge 6; the singlechip 7, the temperature measurement button 4, the zeroing button 5 and the digital bridge 6 are respectively connected with the power interface 2 through external wires.
Further, the stainless steel shell 1 is a cube, and the power interface 2 can be connected to a 220V alternating current circuit.
Further, the diode 14 is located near the center of the temperature measuring ball 13.
Further, the temperature measuring ball 13 is made of aluminum nitride which is a material with good heat conduction and insulation.
Further, the singlechip 7 is located at the left side of the instrument panel area 10, and the digital bridge 6 is located at the right side of the instrument panel area 10.
Further, the digital bridge 6 is connected with the temperature probe interface 3 through a temperature probe external lead 11, and an external lead inclusion 12 is wrapped outside the temperature probe external lead 11.
Further, the temperature measuring button 4 and the zeroing button 5 are arranged in parallel, and the temperature display screen 8, the capacitance display screen 9, the temperature measuring button 4 and the zeroing button 5 are integrated in the instrument panel area 10 from top to bottom.
A method of measuring a temperature measurement instrument based on diode junction capacitance characteristics, comprising the steps of:
A. the temperature measuring probe is connected to a temperature measuring probe interface 3 on the back of the stainless steel shell 1;
B. the power interface 2 is connected into a 220V alternating current circuit, and the temperature measuring button 4 is opened for preheating;
C. pressing the zeroing button 5 causes the digital bridge 6 to automatically zero;
D. fully contacting the temperature measuring probe with an object to be measured;
E. after the temperature indication on the temperature display screen 8 is stable, reading the temperature indication and the capacitance indication at the moment to obtain the temperature of the object to be measured and the capacitance of the temperature measuring diode at the moment;
F. repeating the step D and the step E, and repeatedly measuring;
G. after the measurement is finished, the power supply is disconnected, the temperature measuring probe is pulled out, and heat dissipation is carried out;
compared with the prior art, the invention has the beneficial effects that:
the temperature measuring instrument based on the diode temperature-dependent capacitance effect has the advantages of simple structure, low manufacturing cost, convenience for integration in electronic circuits and capability of being directly packaged in semiconductor components; the measuring method can measure the temperature of the electronic device, has the advantages of high precision, convenient operation and the like, is beneficial to ensuring the normal work of the electronic product, and has a larger application space in the electronic industry.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of the body of the apparatus of the present invention;
FIG. 2 is a schematic diagram of the whole structure of the present invention;
FIG. 3 is a schematic diagram of the whole structure of the second embodiment of the present invention;
FIG. 4 is a schematic diagram of a cross-sectional structure of a temperature probe according to the present invention;
fig. 5 is a simplified schematic diagram of a measurement circuit according to the present invention.
In the figure, 1, a stainless steel shell 2, a power interface 3, a temperature measuring probe interface 4, a temperature measuring button 5, a zero setting button 6, a digital bridge 7, a singlechip 8, a temperature display screen 9, a capacitance display screen 10, an instrument panel area 11, a temperature measuring probe external lead 12, an external lead inclusion 13, a temperature measuring ball 14 and a diode.
Detailed Description
The invention is further illustrated by the following examples:
the invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
The electronic industry is based on the physical theory of semiconductor devices. The physical basis of the modern semiconductor device is the PN junction theory, so that the basis of the existing electronic element is the PN junction. The PN junction adopts different doping processes, and a P-type semiconductor (a semiconductor with multiple electrons) and an N-type semiconductor (a semiconductor with multiple holes) are manufactured on the same semiconductor (usually silicon or germanium) substrate through diffusion, so that a space charge region is formed at the interface of the P-type semiconductor and the N-type semiconductor. PN junctions have unidirectional conductivity and are the material basis for many devices in electronics, such as semiconductor diodes, bipolar transistors. PN junctions have many interesting physical phenomena such as unidirectional conductivity, capacitive effects, etc. The present invention is primarily concerned with capacitive effects. The junction capacitance can be divided into a barrier capacitance and a diffusion capacitance according to the generation cause, and the diffusion capacitance is related to temperature, and the main structure of the diode is a PN junction. The present invention is based on the fact that the temperature measuring instrument is made based on the temperature-dependent capacitance effect of the diode.
As shown in fig. 1-5, the temperature measuring instrument based on diode junction capacitance characteristics comprises an instrument main body structure consisting of a stainless steel shell 1, a temperature measuring probe, a digital bridge 6, a singlechip 7, a display screen and an instrument panel 10. The temperature measuring instrument based on the diode junction capacitance characteristic further comprises a power interface 2.
The stainless steel shell 1 is square, an instrument panel area 10 is arranged in the middle of the front face of the stainless steel shell 1, a power interface 2 is arranged on the back face of the stainless steel shell, and the power interface 2 can be connected into a 220V alternating current circuit.
The temperature measuring probe is connected with a double-wire interface (namely a temperature measuring probe interface 3) arranged on the back surface of the stainless steel shell 1. The temperature measuring probe comprises a temperature measuring ball 13 and a diode 14, wherein the diode 14 is positioned at the position close to the center of the temperature measuring ball 13, and the diode 14 is wrapped by the temperature measuring ball 13.
Specifically, the temperature measuring ball 13 is made of aluminum nitride which is a material with good heat conduction and insulation.
The singlechip 7 is connected with the digital bridge 6, and the singlechip 7 and the digital bridge 6 are respectively positioned at two sides of the instrument panel area 10. Wherein, singlechip 7 is located the left side in panel board region 10, digit bridge 6 is located the right side in panel board region 10.
During instrument production, the temperature-variable capacitance characteristic of the diode, namely the relation curve of the diode capacitance and the temperature, is embedded into the singlechip 7. When in use, the digital bridge 6 is connected with the temperature measuring probe, so that the digital bridge 6 can directly measure the capacitance value of the diode 14 in the temperature measuring probe, and the singlechip 7 can calculate the measured temperature according to the relation curve of the built-in diode capacitance and the temperature by utilizing the capacitance value.
Specifically, the digital bridge 6 is connected with the temperature measuring probe interface 3 through a temperature measuring probe external lead 11. The external lead 11 of the temperature measuring probe is electrically connected with the diode 14. The external conductor inclusion 12 wraps the external conductor 11 of the temperature measuring probe, and is used for guaranteeing that line insulation is not interfered by the outside, fixing the relative positions of two internal conductors, and preventing inaccurate measurement caused by the change of the relative positions of the two conductors.
The instrument panel area 10 is respectively integrated with a temperature display screen 8, a capacitance display screen 9, a temperature measurement button 4 and a zeroing button 5 from top to bottom, and the temperature measurement button 4 and the zeroing button 5 are arranged in parallel.
The singlechip 7, the temperature measurement button 4, the zeroing button 5 and the digital bridge 6 are respectively connected with the power interface 2 through external wires.
Specifically, the temperature measuring button 4 is circular, and the zeroing button 5 is square.
Wherein the temperature display screen 8 is used for displaying the measured temperature. The capacitive display screen 9 displays the capacitance value measured by the digital bridge 6. The temperature measuring button 4 is a power switch and is used for controlling the on-off of the instrument, the instrument is in a working state when pressed, namely a temperature measuring state, and the instrument is in a closing state when popped up. The zeroing button 5 is used for zeroing the digital bridge 6.
The invention relates to a measuring method of a temperature measuring instrument based on diode junction capacitance characteristics, which comprises the following steps:
1. the temperature measuring probe is connected to a temperature measuring probe interface 3 on the back of the stainless steel shell 1;
2. the power interface 2 is connected into a 220V alternating current circuit, and the temperature measuring button 4 is opened for preheating;
3. pressing the zeroing button 5 causes the digital bridge 6 to automatically zero;
4. fully contacting the temperature measuring probe with an object to be measured;
5. after the temperature indication on the temperature display screen 8 is stable, reading the temperature indication and the capacitance indication at the moment to obtain the temperature of the object to be measured and the capacitance of the temperature measuring diode at the moment;
6. repeating the step 4 and the step 5, and repeatedly measuring;
7. after the measurement is finished, the power supply is disconnected, the temperature measuring probe is pulled out, and heat dissipation is carried out;
finally, the temperature of the target object can be measured by the temperature measuring instrument.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (8)
1. A temperature measuring instrument based on diode junction capacitance characteristics, characterized in that: comprises a stainless steel shell (1); the front surface of the stainless steel shell (1) is provided with an instrument panel area (10), and the back surface of the stainless steel shell is provided with a power interface (2);
the temperature measuring device also comprises a temperature measuring probe, a digital bridge (6) and a singlechip (7); the temperature measuring probe is connected with a temperature measuring probe interface (3) arranged on the back of the stainless steel shell (1), and comprises a temperature measuring ball (13) and a diode (14) wrapped outside the temperature measuring ball; the digital bridge (6) and the singlechip (7) are respectively positioned at two sides of the instrument panel area (10); the digital bridge (6) is connected with the temperature measuring probe interface (3), and the external wire (11) of the temperature measuring probe is electrically connected with the diode (14); the singlechip (7) is internally provided with a relation curve of diode capacitance and temperature; during measurement, the digital bridge (6) is connected with the temperature measuring probe, the digital bridge (6) can directly measure the capacitance value of the diode (14) in the temperature measuring probe, and the singlechip (7) calculates the measured temperature according to the relation curve of the built-in diode capacitance and the temperature by utilizing the capacitance value;
a temperature display screen (8), a capacitance display screen (9), a temperature measurement button (4) and a zero setting button (5) are integrated on the instrument panel area (10); the temperature display screen (8) is used for displaying the measured temperature; the capacitance display screen (9) is used for displaying capacitance values measured by the digital bridge (6); the temperature measuring button (4) is used for controlling the on-off of the instrument; the zeroing button (5) is used for zeroing the digital bridge (6); the singlechip (7), the temperature measurement button (4), the zero setting button (5) and the digital bridge (6) are respectively connected with the power interface (2) through external wires.
2. A diode junction capacitance characteristic based temperature measurement instrument according to claim 1, wherein: the stainless steel shell (1) is a cube, and the power interface (2) can be connected into a 220V alternating current circuit.
3. A diode junction capacitance characteristic based temperature measurement instrument according to claim 1, wherein: the diode (14) is positioned at the position close to the sphere center of the temperature measuring sphere (13).
4. A diode junction capacitance characteristic based temperature measurement instrument according to claim 1, wherein: the temperature measuring ball (13) is made of aluminum nitride which is a material with good heat conduction and insulation.
5. A diode junction capacitance characteristic based temperature measurement instrument according to claim 1, wherein: the singlechip (7) is positioned at the left side of the instrument panel area (10), and the digital bridge (6) is positioned at the right side of the instrument panel area (10).
6. A diode junction capacitance characteristic based temperature measurement instrument according to claim 1, wherein: the digital bridge (6) is connected with the temperature measuring probe interface (3) through a temperature measuring probe external lead (11), and an external lead inclusion (12) is wrapped outside the temperature measuring probe external lead (11).
7. A diode junction capacitance characteristic based temperature measurement instrument according to claim 1, wherein: the temperature measuring button (4) and the zeroing button (5) are arranged in parallel, and the temperature display screen (8), the capacitance display screen (9), the temperature measuring button (4) and the zeroing button (5) are integrated in the instrument panel area (10) from top to bottom.
8. A method of measuring a temperature measuring instrument based on diode junction capacitance characteristics, comprising the steps of:
A. a temperature measuring probe is connected to a temperature measuring probe interface (3) on the back of the stainless steel shell (1);
B. the power interface (2) is connected into a 220V alternating current circuit, and the temperature measuring button (4) is opened for preheating;
C. pressing the zeroing button (5) to automatically zeroe the digital bridge (6);
D. fully contacting the temperature measuring probe with an object to be measured;
E. after the temperature indication on the temperature display screen (8) is stable, reading out the temperature indication and the capacitance indication at the moment to obtain the temperature of the object to be measured and the capacitance of the temperature measuring diode at the moment;
F. repeating the step D and the step E, and repeatedly measuring;
G. and after the measurement is finished, the power supply is disconnected, the temperature measuring probe is pulled out, and heat dissipation is carried out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310052687.2A CN116295894A (en) | 2023-02-02 | 2023-02-02 | Temperature measuring instrument and measuring method based on diode junction capacitance characteristics |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310052687.2A CN116295894A (en) | 2023-02-02 | 2023-02-02 | Temperature measuring instrument and measuring method based on diode junction capacitance characteristics |
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| Publication Number | Publication Date |
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| CN116295894A true CN116295894A (en) | 2023-06-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310052687.2A Pending CN116295894A (en) | 2023-02-02 | 2023-02-02 | Temperature measuring instrument and measuring method based on diode junction capacitance characteristics |
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| Country | Link |
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- 2023-02-02 CN CN202310052687.2A patent/CN116295894A/en active Pending
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