CN116240621A - 直拉法制备超高电阻率硅衬底的方法 - Google Patents
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Abstract
本发明公开了一种直拉法制备超高电阻率硅衬底的方法,该方法的工艺流程为:直拉法制备硅单晶→单晶棒滚磨→多线切割→边缘倒角→双面研磨→化学腐蚀→热处理→化学机械抛光;其中,在所述直拉法制备硅单晶的工序中,单晶生长过程中使用水平超导磁场,磁场强度为1000‑5000高斯,同时,采用特定的晶体转速和坩埚转速相配合,晶体转速为1‑12rpm,坩埚转速为0.1‑2rpm;在所述热处理工序为POLY+LTO薄膜生长;或者为高温退火。该方法适用于制备直径在8英寸及以上、电阻率在3000Ω·cm以上、氧含量在5ppma以下的P型硅衬底。所制备的单晶氧含量低于5ppma,退火后电阻率能够达到3000Ω·cm以上,并且氧含量均匀性小于10%,电阻率均匀性小于5%。
Description
技术领域
本发明涉及一种直拉法制备超高电阻率硅衬底的方法,属于半导体集成电路制造技术领域。
背景技术
超高电阻率硅衬底在射频、滤波、功率半导体器件的制备领域有着广泛的应用。目前,制备超高电阻率硅衬底的方法通常为先使用区熔法制备具有较高电阻率的硅单晶,再将硅单晶经过切割、研磨、抛光等工序加工成为硅抛光片。但区熔法制备硅单晶存在成晶困难、难以进行8英寸及以上大尺寸单晶的制备、电阻率均匀性差、成本较高等问题。因此使用区熔法制备硅衬底具有较大的局限性。
传统直拉法更容易制备出8英寸及以上的大尺寸硅单晶,且制备的单晶具有更好的电阻率均匀性。但是使用直拉法制备硅单晶的过程中需要使用SiO2石英坩埚,会使得制备的硅单晶中具有较高的氧含量,而硅单晶中的氧会成为N型杂质,使硅单晶的电阻率难以达到较高的水平。因此,除了使用直拉法制备出高电阻率、低氧含量的硅单晶外,还需要在硅片加工工序中设计合理的热处理工艺,将硅衬底中氧的影响降低,最终得到超高电阻率、超低氧含量的硅衬底。
发明内容
针对现有技术中存在的上述问题,本发明的目的在于提出一种直拉法制备超高电阻率硅衬底的方法,该方法适用于制备直径在8英寸及以上、电阻率在3000Ω·cm以上、氧含量在5ppma以下的P型硅衬底。
为实现上述目的,本发明采用以下技术方案:
一种直拉法制备超高电阻率硅衬底的方法,该方法的工艺流程为:直拉法制备硅单晶→单晶棒滚磨→多线切割→边缘倒角→双面研磨→化学腐蚀→热处理→化学机械抛光;其中,
在所述直拉法制备硅单晶的工序中,单晶生长过程中使用水平超导磁场,磁场强度为1000-5000高斯。同时,本发明所述直拉法制备硅单晶的过程中采用特定的晶体转速和坩埚转速相配合,晶体转速为1-12rpm,坩埚转速为0.1-2rpm。
所述热处理工序可以选择以下两种方法中的一种:一种为POLY+LTO薄膜生长;一种为高温退火。
在所述POLY薄膜生长工序中,采用LPCVD(低压化学气相沉积)工艺,温度区间为600-680℃,实际沉积区域温度梯度≤0.5%,LPCVD的气体流量区间为50-200mL/min,实际沉积区域气体浓度梯度≤5%,所生长的POLY薄膜的厚度为6000-10000埃,片内均匀性≤5%,片间均匀性≤10%。
在所述LTO薄膜生长工序中采用APCVD(常压化学气相沉积)工艺,温度为380-450℃,SiH4流量为0.1-0.5slm,氧气流量为0.5-2.5slm,生长速率为1000-1500埃/分钟。单片连续履带式生长,压力为常压,薄膜的厚度为4000-6000埃;片内均匀性≤5%,片间均匀性≤10%,进行电极法检测致密性,气泡数少于3个,无杂质导致的漏电失效。
在所述高温退火工序中,热处理温度为500-700℃,热处理时间为20-60min。
使用本发明的方法制备的硅衬底为P型,电阻率大于3000Ω·cm,氧含量小于5ppma,电阻率均匀性小于5%,氧含量均匀性小于10%。
本发明的有益效果在于:
1、本发明通过直拉法拉制了具有超高电阻率和超低氧含量的硅单晶。所制备的单晶氧含量低于5ppma,退火后电阻率能够达到3000Ω·cm以上,并且氧含量均匀性小于10%,电阻率均匀性小于5%;
2、本发明制备的超高电阻率硅衬底可以在部分IC产品中替代区熔硅衬底,具有良好的使用效果。
附图说明
图1为本发明制备超高电阻率硅衬底的工艺流程图。
具体实施方式
以下结合附图和实施例对本发明进行进一步详细说明,但并不意味着对本发明保护范围的限制。
如图1所示,本发明的超高电阻率硅衬底的制备方法的工艺流程为:直拉法制备硅单晶→单晶棒滚磨→多线切割→边缘倒角→双面研磨→化学腐蚀→热处理→化学机械抛光。本发明的主要技术要点为使用直拉法制备出高电阻率和低氧含量的硅单晶,该单晶同时具有良好的电阻率均匀性和较少的COP。
制备超高电阻率硅衬底最重要的是将硅单晶内部的氧含量控制到极低的水平。本发明所使用的直拉法单晶生长技术中使用了水平超导磁场,磁场强度为1000-5000高斯。磁场对熔体对流有着显著的迟滞效应,可以有效降低硅熔体内的氧含量,同时可以使硅熔体温度梯度分布均匀,有利于改善硅单晶的电阻率合氧含量分布的均匀性并减少COP。本发明所使用的直拉法单晶生长技术同时对晶体转速和坩埚转速有特殊要求,晶体转速为1-12rpm,坩埚转速为0.1-2rpm。
由于超高电阻率硅衬底中氧含量极低,在后续加工过程中难以形成足够的BMD(体相微缺陷)对衬底进行吸杂,因此本发明设计了POLY(多晶硅)+LTO(低温氧化物)薄膜生长的热处理工艺,POLY薄膜生长工艺温度区间为600-630℃,实际沉积区域温度梯度≤0.5%,LPCVD的气体流量区间为50-200mL/min,实际沉积区域气体浓度梯度≤5%;LTO薄膜生长工艺温度为380-450℃,SiH4流量为0.1-0.5slm,氧气流量为0.5-2.5slm,单片连续履带式生长,压力为常压,薄膜的厚度为4000-6000埃。该工艺在衬底背面形成POLY+LTO薄膜,可以对衬底起到很好的吸杂作用,同时该热处理工艺窗口的设置可以对衬底起到退火的作用,消除衬底内部氧施主的效应,使衬底的电阻率达到3000Ω·cm以上,并保持稳定。
对于无吸杂要求的衬底,使用本发明设计的退火工艺,也可以使衬底的电阻率在退火后达到3000Ω·cm以上,并保持稳定。
在本发明中,电阻率均匀性的测试方法为:使用四探针法分别测试衬底样片中心位置及边缘四点(每点间隔90°)的电阻率数值,边缘四点电阻率的平均值与中心点电阻率的差值除以中心点电阻率数值得到的比值即为电阻率均匀性。
氧含量均匀性的测试方法为:使用傅里叶红外光谱法测试衬底样片中心位置及边缘四点(每点间隔90°)的氧含量数值,边缘四点氧含量的平均值与中心点氧含量的差值除以中心点氧含量数值得到的比值即为氧含量均匀性。
实施例1
通过使用本发明中的直拉法单晶生长技术拉制8英寸硅单晶,单晶生长过程中磁场强度为3000高斯,坩埚转速为0.1rpm,晶体转速为1rpm。
采用本发明的如下工序将该单晶加工成硅衬底抛光片:单晶棒滚磨→多线切割→边缘倒角→双面研磨→化学腐蚀→POLY薄膜生长→LTO薄膜生长→化学机械抛光。POLY薄膜生长厚度为8000埃,工艺温度为615℃,实际沉积区域温度梯度≤0.5%,LPCVD的气体流量区间为150mL/min,实际沉积区域气体浓度梯度≤5%。LTO薄膜生长工序中采用APCVD工艺,温度为400℃,SiH4流量为0.2slm,氧气流量为1.0slm,单片连续履带式生长,压力为常压,薄膜的厚度为4000埃。
对使用本发明的方法制备的硅衬底抛光片进行抽样检测,数据如下:
实施例2
通过使用本发明中的直拉法单晶生长技术拉制8英寸硅单晶,单晶生长过程中磁场强度为3000高斯,坩埚转速为0.1rpm,晶体转速为5rpm。
采用本发明的如下工序将该单晶加工成硅衬底抛光片:单晶棒滚磨→多线切割→边缘倒角→双面研磨→化学腐蚀→POLY薄膜生长→LTO薄膜生长→化学机械抛光。POLY薄膜生长厚度为8500埃,工艺温度为615℃,实际沉积区域温度梯度≤0.5%,LPCVD的气体流量区间为180mL/min,实际沉积区域气体浓度梯度≤5%。LTO薄膜生长工序中采用APCVD工艺,温度为400℃,SiH4流量为0.2slm,氧气流量为1.0slm,单片连续履带式生长,压力为常压,薄膜的厚度为5000埃。
对使用本发明的方法制备的硅衬底抛光片进行抽样检测,数据如下:
实施例3
通过使用本发明中的直拉法单晶生长技术拉制8英寸硅单晶,单晶生长过程中磁场强度为3000高斯,坩埚转速为0.1rpm,晶体转速为3rpm。
采用本发明的如下工序将该单晶加工成硅衬底抛光片:单晶棒滚磨→多线切割→边缘倒角→双面研磨→化学腐蚀→退火→化学机械抛光。退火温度为650℃,退火时间为30min。
对使用本发明的方法制备的硅衬底抛光片进行抽样检测,数据如下:
Claims (5)
1.一种直拉法制备超高电阻率硅衬底的方法,该方法的工艺流程为:直拉法制备硅单晶→单晶棒滚磨→多线切割→边缘倒角→双面研磨→化学腐蚀→热处理→化学机械抛光;其特征在于,
在所述直拉法制备硅单晶的工序中,单晶生长过程中使用水平超导磁场,磁场强度为1000-5000高斯,同时,采用特定的晶体转速和坩埚转速相配合,晶体转速为1-12rpm,坩埚转速为0.1-2rpm;
在所述热处理工序为POLY+LTO薄膜生长;或者为高温退火。
2.根据权利要求1所述的直拉法制备超高电阻率硅衬底的方法,其特征在于,在所述POLY薄膜生长工序中,采用LPCVD工艺,温度区间为600-630℃,实际沉积区域温度梯度≤0.5%,LPCVD的气体流量区间为50-200mL/min,实际沉积区域气体浓度梯度≤5%;
在所述LTO薄膜生长工序中采用APCVD工艺,温度为380-450℃,SiH4流量为0.1-0.5slm,氧气流量为0.5-2.5slm,生长速率为1000-1500埃/分钟。
3.根据权利要求2所述的直拉法制备超高电阻率硅衬底的方法,其特征在于,所生长的POLY薄膜的厚度为6000-10000埃,片内均匀性≤5%,片间均匀性≤10%;
所述LTO薄膜采用单片连续履带式生长,压力为常压,薄膜的厚度为4000-6000埃;片内均匀性≤5%,片间均匀性≤10%,进行电极法检测致密性,气泡数少于3个,无杂质导致的漏电失效。
4.根据权利要求1所述的直拉法制备超高电阻率硅衬底的方法,其特征在于,在所述高温退火工序中,热处理温度为500-700℃,热处理时间为20-60min。
5.根据权利要求1所述的直拉法制备超高电阻率硅衬底的方法,其特征在于,所制备的硅衬底为P型,电阻率大于3000Ω·cm,氧含量小于5ppma,电阻率均匀性小于5%,氧含量均匀性小于10%。
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