CN116153922A - High-power intelligent IGBT module and processing technology thereof - Google Patents
High-power intelligent IGBT module and processing technology thereof Download PDFInfo
- Publication number
- CN116153922A CN116153922A CN202310115833.1A CN202310115833A CN116153922A CN 116153922 A CN116153922 A CN 116153922A CN 202310115833 A CN202310115833 A CN 202310115833A CN 116153922 A CN116153922 A CN 116153922A
- Authority
- CN
- China
- Prior art keywords
- bonding
- chip
- driving plate
- bottom plate
- shell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012545 processing Methods 0.000 title abstract description 12
- 238000005516 engineering process Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000576 coating method Methods 0.000 claims abstract description 26
- 239000011248 coating agent Substances 0.000 claims abstract description 25
- 239000000853 adhesive Substances 0.000 claims abstract description 24
- 230000001070 adhesive effect Effects 0.000 claims abstract description 24
- 239000003292 glue Substances 0.000 claims abstract description 22
- 239000003822 epoxy resin Substances 0.000 claims abstract description 15
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000007689 inspection Methods 0.000 claims description 22
- 229910000831 Steel Inorganic materials 0.000 claims description 21
- 239000010959 steel Substances 0.000 claims description 21
- 238000007639 printing Methods 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 5
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 3
- 230000017525 heat dissipation Effects 0.000 abstract description 18
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract 1
- 239000000047 product Substances 0.000 description 28
- 238000013461 design Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000004382 potting Methods 0.000 description 3
- 206010063385 Intellectualisation Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000007718 adhesive strength test Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a high-power intelligent IGBT module and a processing technology thereof, wherein the module comprises a shell, a bottom plate, a driving plate, a chip, an insulating substrate, adhesive glue, a power terminal and a signal terminal, wherein the shell is provided with a containing cavity, the bottom plate is fixed at the bottom of the shell, the driving plate is positioned above the bottom plate, and insulating coating glue is filled between the bottom plate and the driving plate; the chip is positioned beside the driving plate and above the bottom plate, an insulating substrate is arranged on the bottom plate, and the chip is positioned above the insulating substrate; a bonding wire is connected between the driving plate and the chip, the power terminal is connected to the shell, the signal terminal is connected to the driving plate, and the adhesive is positioned between the bottom plate and the shell; and epoxy resin is poured into the accommodating cavity. The processing technology comprises the steps of cleaning, sintering, bonding, glue filling and detection. The thickness problem and the heat dissipation problem of the encapsulation module are effectively solved, so that the module is lighter and thinner, and has the characteristics of miniaturization and strong heat dissipation capability.
Description
Technical Field
The invention relates to the technical field of intelligent power modules, in particular to a high-power intelligent IGBT module and a processing technology thereof.
Background
The driving plate, the chip and the power part of the intelligent power module are in laminated design, and the driving plate is connected with the chip through an internal signal terminal and an aluminum wire. Because the driving plate is positioned above the chip, the driving plate must reserve a safe space with the chip and the aluminum wire to prevent large voltage breakdown. The design needs to reserve enough installation space and safe space in the longitudinal direction of the module, so that the whole thickness of the intelligent power module is high, and the intelligent power module cannot be installed and placed in a narrow space. The reduction of the drive plate height until it is attached to the chip can greatly reduce the overall module height, but is not achievable with existing packaging processes. The module upper cover in the prior art is designed into a buckling structure and a bonding structure, and the module upper cover also has the defects of complex structure, large longitudinal height and high thickness. The inside of the module is filled with devices such as a silica gel protection chip, and a small amount of bubbles still exist after vacuum defoamation is carried out after the glue filling, so that the gas in the silica gel expands due to the heating of the chip in the working process. Thus, the cover design generally leaves sufficient space with the silicone gel to prevent spillage due to silicone gel swelling, or damage to the cover.
The plastic package intelligent power module is formed by sintering the lead frame and the chip, and finally the product is packaged by using the epoxy resin material, so that the design has no encapsulating bottom plate structure, the rapid heat dissipation is difficult in the high-power field, and the reliability of the product is difficult to guarantee under the long-time high-temperature working state. In summary, the intelligent power module adopts a potting and plastic packaging structure, the potting structure adopts a laminated design of a driving plate and a power part, and the structure thickness is larger. The plastic package structure is packaged by epoxy resin, has poor heat dissipation capacity and is not suitable for the development of high-power modules.
Therefore, improvements are needed to the existing intelligent IGBT module structure and its processing technology to solve the above-mentioned problems.
Disclosure of Invention
In view of the above, the present invention aims at overcoming the drawbacks of the prior art, and its main objective is to provide a high-power intelligent IGBT module and a processing technology thereof, which effectively solve the thickness problem and the heat dissipation problem of the potting module, so that the module has the characteristics of miniaturization and strong heat dissipation capability.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the high-power intelligent IGBT module comprises a shell, a bottom plate, a driving plate, a chip, an insulating substrate, bonding glue, a power terminal and a signal terminal, wherein a containing cavity is formed in the shell, the bottom plate is fixed at the bottom of the shell, the driving plate is positioned above the bottom plate, insulating coating glue is filled between the bottom plate and the driving plate, and the driving plate is bonded and fixed on the bottom plate; the chip is positioned beside the driving plate and above the bottom plate, an insulating substrate for placing the chip is arranged on the bottom plate, and the chip is positioned above the insulating substrate; a bonding wire is connected between the driving plate and the chip, the power terminal is connected to the shell, the signal terminal is connected to the driving plate, and the adhesive is positioned between the bottom plate and the shell; and epoxy resin is poured into the accommodating cavity, and the driving plate, the chip and the bonding wires are completely covered by the epoxy resin.
As a preferred embodiment: an insulating coating adhesive is arranged between the insulating substrate and the bottom plate.
As a preferred embodiment: the chip comprises an IGBT chip and an FRD chip, and a bonding wire is also connected between the chip and the inner wall of the shell.
As a preferred embodiment: the inner wall of the shell is provided with a step, one end of the bonding wire is connected to the chip, and the other end is connected to the step.
As a preferred embodiment: the base plate is provided with a supporting seat for placing the chip, the chip is fixed on the upper surface of the supporting seat, and the insulating substrate is positioned in the middle of the supporting seat.
As a preferred embodiment: the insulating substrate is made of ceramic copper-clad material with high heat conductivity and low thermal expansion.
As a preferred embodiment: the bottom plate is made of aluminum-silicon composite materials.
The processing technology of the high-power intelligent IGBT module comprises the following steps of:
s1, carrying out plasma cleaning on accessories required by a module to remove dirt and dust on the surfaces of the accessories;
s2, sintering and fixing 7 IGBT chips and 7 FRD chips with the insulating substrate through a vacuum sintering furnace, and vacuum sintering and fixing the insulating substrate with the bottom plate;
s3, bonding and curing the driving plate and the bottom plate through insulating coating glue;
s4, bonding the shell and the bottom plate;
s5, bonding the driving plate and the chip through a bonding machine, and bonding the shell and the emitter of the chip;
s6, gluing, protecting and solidifying the chip, and filling epoxy resin for sealing caps;
s7, testing the product, checking the appearance of the product, and warehousing the product.
As a preferred embodiment: in the step S3, the driving plate bonding step is as follows:
s31, adjusting the steel mesh clamp, and cleaning the glue coating printing table and the steel mesh clamp by using alcohol;
s32, adjusting the height of the steel mesh clamp, enabling the steel mesh clamp to be tightly attached to the glue coating printing table, and adjusting the position;
s33, placing the insulating coating adhesive on the steel mesh, wherein the placing amount of the insulating coating adhesive is preferably that the printing knife is just scraped each time and is not lower than 2/3 of the height of the printing knife, and the printing knife uniformly scrapes at an inclined angle of 45-60 degrees with the steel mesh;
s34, placing the driving plate according to the designed position, flattening the driving plate to ensure that the bottom of the driving plate is free from foreign matters, and pressing the steel mesh clamp onto the driving plate;
s35, bonding the device after the driving plate is bonded, and curing for 24 hours at the temperature of 25 ℃;
s36, checking.
As a preferred embodiment: in the step S5, the bonding step is as follows:
s51, before the batch bonding operation, the riving knife is replaced, the maintenance equipment is maintained, and before the work is performed, the head piece inspection is performed, wherein the inspection comprises appearance inspection, lead bonding strength, spring pit (only one-time bonding) and bonding thrust inspection, and the batch operation can be performed after the inspection is qualified;
before operation, checking the state of the chopper under a microscope, wherein aluminum residue is not allowed to remain on the chopper, or edges or gaps are broken, or else, the chopper is replaced;
s52, bonding the chip and the driving plate, installing a bonding clamp before bonding, and placing the bonded product into the bonding clamp for fixing, so as to confirm whether the product is firmly fixed;
s53, calling out a bonding program, checking bonding parameters, checking whether the riving knife is firmly installed, and starting bonding;
s54, the driving plate is connected with the chip by adopting 250 mu m aluminum wire bonding, and the shell is connected with the emitter of the chip by adopting 380 mu m aluminum wire bonding;
s55, bonding inspection.
Compared with the prior art, the invention has obvious advantages and beneficial effects, and particularly, the technical scheme can solve the problems of material integration, packaging technology and chip driving interference by combining the advantages of high heat dissipation capacity of the encapsulation module and miniaturization of the plastic package module. The problem of product miniaturization, intellectualization and high-power integrated heat dissipation is solved, and the design effect is unreachable by the existing packaging scheme. Meanwhile, the thickness problem and the heat dissipation problem of the encapsulating module are effectively solved, the module has the advantages of miniaturization and strong heat dissipation capability, the whole encapsulating module is lighter and thinner than the traditional encapsulating module, the occupied space is smaller, the intelligent power module has positive promotion effects on miniaturization and high integration, the basic characteristics of the next-generation intelligent power module in the industry are achieved, and the market space is wide.
In order to more clearly illustrate the structural features and efficacy of the present invention, a detailed description thereof will be given below with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a schematic top view of a smart IGBT module of the present invention;
FIG. 2 is a schematic cross-sectional view of the internal structure of the intelligent IGBT module of the invention;
fig. 3 is a schematic process flow diagram of the intelligent IGBT module of the invention.
The attached drawings are used for identifying and describing:
100. a module; 101. a housing; 102. a bottom plate; 103. insulating coating glue; 104. a driving plate; 105. an insulating substrate; 106. a chip; 107. a bonding wire; 108. adhesive glue; 109. a power terminal; 110. an epoxy resin; 111. a signal terminal; 112. a receiving chamber; 113. a step; 114. and a supporting seat.
Detailed Description
The invention discloses a high-power intelligent IGBT module and a processing technology thereof, as shown in figures 1 to 3, wherein:
the high-power intelligent IGBT module 100 comprises a shell 101, a bottom plate 102, a driving plate 104, a chip 106, an insulating substrate 105, an adhesive 108, a power terminal 109 and a signal terminal 111, wherein a containing cavity 112 is formed in the shell 101, the bottom plate 102 is fixed at the bottom of the shell 101, the driving plate 104 is positioned above the bottom plate 102, and insulating coating adhesive 103 is filled between the bottom plate 102 and the driving plate 104 so as to fix the driving plate 104 on the bottom plate 102 in an adhesive manner; the chip 106 is located beside the driving plate 104 and above the bottom plate 102, an insulating substrate 105 for placing the chip 106 is arranged on the bottom plate 102, and the chip 106 is located above the insulating substrate 105; a bonding wire 107 is connected between the driving board 104 and the chip 106, the power terminal 109 is connected to the housing 101, the signal terminal 111 is connected to the driving board 104, and the adhesive 108 is located between the bottom board 102 and the housing 101, so as to adhere and fix the bottom board 102 and the housing 101 to each other; and the accommodating cavity 112 is filled with epoxy resin 110, and the epoxy resin 110 completely covers the driving board 104, the chip 106 and the bonding wires 107.
An insulating coating glue 103 is disposed between the insulating substrate 105 and the base plate 102 to fix the insulating substrate 105 on the base plate 102.
The chip 106 includes an IGBT chip 106 and an FRD chip 106, and a bonding wire 107 is also connected between the chip 106 and the inner wall of the housing 101, specifically, a step 113 is disposed on the inner wall of the housing 101, one end of the bonding wire 107 is connected to the emitter of the chip 106, and the other end is connected to the step 113, and the plane of the step 113 can make the connection of the bonding wire 107 more firm.
The base plate 102 is provided with a supporting seat 114 for placing the chip 106, the chip 106 is fixed on the upper surface of the supporting seat 114, and the insulating substrate 105 is located in the middle of the supporting seat 114.
The insulating substrate 105 is made of a ceramic copper-clad material with high thermal conductivity and low thermal expansion, and plays a good role in improving heat dissipation of the chip 106.
The bottom plate 102 is made of aluminum-silicon composite materials, the bottom plate 102 is made of the most advanced aluminum-silicon composite materials, the overall thermal expansion coefficient is low, but the heat conduction capacity of the bottom plate is still close to that of the copper bottom plate 102; because the thermal expansion coefficient of the composite material is close to that of the ceramic insulating substrate 105, a large-curvature structure is not required to be designed, so that the base plate 102 still has good flatness after sintering, and has a larger bonding area with the radiator in use, so that the heat dissipation area is enlarged, and the overall heat dissipation capacity is improved. The design enables the module 100 to have high reliability under certain heat dissipation conditions, and can be adapted to use in various severe environments.
The shell 101 is made of high-temperature-resistant, high-strength and corrosion-resistant materials, and is subjected to affinity design with the epoxy resin 110 to match parameters; because the whole product is encapsulated by the epoxy resin 110 to form a whole, the product chip 106 and the bonding wires form a relatively rigid structure, so that the whole product has good impact resistance. In order to better verify the reliability of the product, the product has no cracking, deformation, layering and other phenomena through high-low temperature alternating experiments, impact and vibration experiments, and reaches the leading level at home and abroad.
The power terminal 109 and the housing 101 adopt an integrated molding structure, which is helpful for the consistency of the whole structure of the product; at the same time, the power terminals 109 are subjected to an overall plating process, which provides the module 100 with good assistance against corrosion, salt spray, and heat and humidity, and can improve its conductivity and solderability.
The processing technology of the high-power intelligent IGBT module 100 comprises the following steps:
s1, plasma cleaning the components (a shell 101, a bottom plate 102, a driving plate 104, an insulating substrate 105, a chip 106, a power terminal 109 and a signal terminal 111) of the module 100 to remove dirt and dust on the surfaces of the components;
s2, sintering and fixing 7 IGBT chips 106 and 7 FRD chips 106 with an insulating substrate 105 through a vacuum sintering furnace, and vacuum sintering and fixing the insulating substrate 105 with a bottom plate 102;
s3, bonding and curing the driving plate 104 and the bottom plate 102 through the insulating coating adhesive 103;
the specific bonding steps are as follows:
technological environment requirements are as follows: temperature: (25+ -3) DEG C
Humidity: (50.+ -. 10)%
Amount of dust: particle number of more than 0.5 μm diameter is less than 10K/cf
S31, adjusting the steel mesh clamp, and cleaning the glue coating printing table and the steel mesh clamp by using alcohol;
s32, adjusting the height of the steel mesh clamp, enabling the steel mesh clamp to be tightly attached to the glue coating printing table, and adjusting the position;
s33, placing the insulating coating adhesive 103 on a steel mesh clamp, wherein the placing amount of the insulating coating adhesive 103 is preferably that the printing knife can scrape just every time and is not lower than 2/3 of the height of the printing knife, and the printing knife uniformly scrapes at an inclined angle of 45-60 degrees with the steel mesh;
s34, placing the driving plate 104 according to a designed position, leveling the driving plate 104 to ensure that no foreign matters exist at the bottom of the driving plate 104, and pressing the steel mesh clamp onto the driving plate 104;
s35, bonding the device behind the driving plate 104, and curing for 24 hours at 25 ℃;
s36, checking, wherein a inspector wears dust-free gloves and antistatic bracelets in the checking process; and (5) making a check record, and finding that the unqualified product is to be processed according to a unqualified product processing flow. The surfaces of the shell 101, the bottom plate 102, the lead terminals, the chip 106 and the AMB and the bonding surfaces except the adhesive interface cannot be provided with adhesive points and stains; a small amount of glue overflows at the joint of the frame of the shell 101 and the bottom plate 102, if the glue overflows continuously, the glue cannot meet the AMB, and the overflow width is within 2/3 of the total side length of the joint of the frame of the shell 101 and the bottom plate 102, and the thickness is smaller than 0.5mm.
S4, bonding the shell 101 and the bottom plate 102;
s5, bonding and connecting the driving plate 104 and the chip 106 through a bonding machine, and bonding and connecting the shell 101 and the emitter of the chip 106;
in the step S5, the bonding step is as follows:
s51, before the batch bonding operation, replacing a chopper and maintaining equipment; before working, first part inspection is carried out, wherein the inspection comprises appearance inspection, lead bonding strength, a pit (only one-time bonding) and bonding thrust inspection, and batch operation can be carried out after the inspection is qualified;
before operation, checking the state of the chopper under a microscope, wherein aluminum residue is not allowed to remain on the chopper, or edges or gaps are broken, or else, the chopper is replaced;
s52, bonding the chip 106 and the driving plate 104, installing a bonding clamp before bonding, and placing the bonded product into the clamp for fixing, so as to confirm whether the product is firmly fixed;
s53, calling out a bonding program, checking bonding parameters, checking whether the riving knife is firmly installed, and starting bonding;
s54, the driving plate 104 is connected with the chip 106 by adopting 250 mu m aluminum wire bonding, and the shell 101 is connected with the emitter of the chip 106 by adopting 380 mu m aluminum wire bonding; the bonding wires and the wire number are according to the product design structure assembly diagram;
s55, bonding inspection.
1. During the inspection process, the inspector wears dust-free gloves and antistatic bracelets;
2. and (5) making a check record, and finding that the unqualified product is to be treated according to a unqualified product treatment flow.
3. And confirming the drawing, namely confirming whether the diameter, the number and the trend of the bonded semi-finished bonding wires are consistent with the drawing.
4. After bonding, each semi-finished product is subjected to appearance inspection in 100%;
5. appearance inspection: execute the GJB128A-1997 method 2069;
6. bonding strength: the first bonding uses the same sample as the chip 106 adhesive strength, after the bonding strength test is finished, the chip 106 adhesive strength test is carried out, 1 module 100 is extracted for each batch of bonding for the second time, the aluminum wires between the AMB-AMB and the AMB-shell 101 are checked, the GJB128A-1997 method 2037 is executed, and the 11 wires are extracted (C=0);
7. the bonding strength of the aluminum wires with the diameter of 380 mu m is more than 224g, the bonding strength of the aluminum wires with the diameter of 250 mu m is more than 122.4g, and the bond detachment is not allowed.
8. Bonding point thrust: at the time of the head-piece inspection, the IGBT chip 106, the FRD chip 106, and the insulating substrate 105 are pushed 11 dots (c=0) per position, and 380 μm is required to be larger than 306g, and 250 μm is required to be larger than 153g.
9. And (3) checking a bullet hole: the bonding points and aluminum layers on the surfaces of the chips 106 were etched away using NaOH or KOH solution, and the bonding locations were observed with a metallographic microscope 50X-200X, requiring no surface damage, and 4 chips 106 (2 IGBT chips 106 and 2 FRD chips 106 on 1 AMB) were pulled (c=0).
S6, performing gluing protection and curing on the chip 106, and filling epoxy resin 110 for capping;
s7, testing the product, checking the appearance of the product, and warehousing the product.
The patent application provides a high-power, light and thin three full-bridge+brake+driving intelligent power module 100 and a processing technology, wherein the power part of the module 100 consists of 7 IGBT chips 106 and 7 FRD chips 106. The driving section is mainly composed of 7 IC chips 106, and drives the chips 106 of the power section, respectively.
The driving plate 104 and the chip 106 are positioned on the same plane, so that the safety space of the driving plate 104 and the chip 106 is saved in the longitudinal space (the whole thickness direction of the module 100), the driving plate 104 and the chip 106 are connected by transverse bonding, the height of bonding wires is obviously lower than that of products in the same industry, and the thickness of the products can be effectively reduced. The driving plate 104 and the chip 106 are transversely arranged, and the gap between the driving plate 104 and the chip 106 is the insulation distance, so that the risk of too close and weak current and strong current short circuit of the driving plate 104 above the chip 106 is avoided, and the design is a flattening effect which cannot be achieved by the existing product.
The driving plate 104 and the signal terminals 111 are welded by adopting labels, the back surface of the driving plate 104 is adhered to the bottom plate 102 by using the insulating coating adhesive 103, the insulating coating adhesive 103 has higher viscosity and fluidity, and the adhesive layer is uniform and has no defects such as bubbles, hollows and the like in the coating process, and has higher strength after solidification; the insulation capability can be ensured under the condition of reducing the distance between the driving plate 104 and the bottom plate 102 by the design; meanwhile, the defects of weak bonding and desoldering, insufficient bonding position precision and the like of bonding points caused by shaking are avoided.
The design focus of the invention is to overcome the problems of material integration, packaging technology and chip driving interference by combining the advantages of high heat dissipation capacity of the encapsulation module and miniaturization of the plastic package module. The problem of product miniaturization, intellectualization and high-power integrated heat dissipation is solved, and the design effect is unreachable by the existing packaging scheme. Meanwhile, the thickness problem and the heat dissipation problem of the encapsulating module are effectively solved, the module has the advantages of miniaturization and strong heat dissipation capability, the whole encapsulating module is lighter and thinner than the traditional encapsulating module, the occupied space is smaller, the intelligent power module has positive promotion effects on miniaturization and high integration, the basic characteristics of the next-generation intelligent power module in the industry are achieved, and the market space is wide.
The foregoing description is only a preferred embodiment of the present invention, and is not intended to limit the technical scope of the present invention, so any minor modifications, equivalent changes and modifications made to the above embodiments according to the technical principles of the present invention still fall within the scope of the technical solutions of the present invention.
Claims (10)
1. A high-power intelligent IGBT module is characterized in that: the power module comprises a shell, a bottom plate, a driving plate, a chip, an insulating substrate, adhesive glue, a power terminal and a signal terminal, wherein a containing cavity is formed in the shell, the bottom plate is fixed at the bottom of the shell, the driving plate is positioned above the bottom plate, insulating coating glue is filled between the bottom plate and the driving plate, and the driving plate is adhered and fixed on the bottom plate; the chip is positioned beside the driving plate and above the bottom plate, an insulating substrate for placing the chip is arranged on the bottom plate, and the chip is positioned above the insulating substrate; a bonding wire is connected between the driving plate and the chip, the power terminal is connected to the shell, the signal terminal is connected to the driving plate, and the adhesive is positioned between the bottom plate and the shell; and epoxy resin is poured into the accommodating cavity, and the driving plate, the chip and the bonding wires are completely covered by the epoxy resin.
2. The high power intelligent IGBT module of claim 1 wherein: an insulating coating adhesive is arranged between the insulating substrate and the bottom plate.
3. The high power intelligent IGBT module of claim 1 wherein: the chip comprises an IGBT chip and an FRD chip, and a bonding wire is also connected between the chip and the inner wall of the shell.
4. The high power intelligent IGBT module of claim 3 wherein: the inner wall of the shell is provided with a step, one end of the bonding wire is connected to the chip, and the other end is connected to the step.
5. The high power intelligent IGBT module of claim 1 wherein: the base plate is provided with a supporting seat for placing the chip, the chip is fixed on the upper surface of the supporting seat, and the insulating substrate is positioned in the middle of the supporting seat.
6. The high power intelligent IGBT module of claim 1 wherein: the insulating substrate is made of ceramic copper-clad material with high heat conductivity and low thermal expansion.
7. The high power intelligent IGBT module of claim 1 wherein: the bottom plate is made of aluminum-silicon composite materials.
8. A process for manufacturing a high-power intelligent IGBT module according to any one of claims 1 to 7, comprising the steps of:
s1, carrying out plasma cleaning on accessories required by a module to remove dirt and dust on the surfaces of the accessories;
s2, sintering and fixing 7 IGBT chips and 7 FRD chips with the insulating substrate through a vacuum sintering furnace, and vacuum sintering and fixing the insulating substrate with the bottom plate;
s3, bonding and curing the driving plate and the bottom plate through insulating coating glue;
s4, bonding the shell and the bottom plate;
s5, bonding the driving plate and the chip through a bonding machine, and bonding the shell and the emitter of the chip;
s6, gluing, protecting and solidifying the chip, and filling epoxy resin for sealing caps;
s7, testing the product, checking the appearance of the product, and warehousing the product.
9. The process for manufacturing the high-power intelligent IGBT module according to claim 8, wherein: in the step S3, the driving plate bonding step is as follows:
s31, adjusting the steel mesh clamp, and cleaning the glue coating printing table and the steel mesh clamp by using alcohol;
s32, adjusting the height of the steel mesh clamp, enabling the steel mesh clamp to be tightly attached to the glue coating printing table, and adjusting the position;
s33, placing the insulating coating adhesive on the steel mesh, wherein the placing amount of the insulating coating adhesive is preferably that the printing knife is just scraped each time and is not lower than 2/3 of the height of the printing knife, and the printing knife uniformly scrapes at an inclined angle of 45-60 degrees with the steel mesh;
s34, placing the driving plate according to the designed position, flattening the driving plate to ensure that the bottom of the driving plate is free from foreign matters, and pressing the steel mesh clamp onto the driving plate;
s35, bonding the device after the driving plate is bonded, and curing for 24 hours at the temperature of 25 ℃;
s36, checking.
10. The process for manufacturing the high-power intelligent IGBT module according to claim 8, wherein: in the step S5, the bonding step is as follows:
s51, before the batch bonding operation, the riving knife is replaced, the maintenance equipment is maintained, and before the work is performed, the head piece inspection is performed, wherein the inspection comprises appearance inspection, lead bonding strength, spring pit (only one-time bonding) and bonding thrust inspection, and the batch operation can be performed after the inspection is qualified;
before operation, checking the state of the chopper under a microscope, wherein aluminum residue is not allowed to remain on the chopper, or edges or gaps are broken, or else, the chopper is replaced;
s52, bonding the chip and the driving plate, installing a bonding clamp before bonding, and placing the bonded product into the bonding clamp for fixing, so as to confirm whether the product is firmly fixed;
s53, calling out a bonding program, checking bonding parameters, checking whether the riving knife is firmly installed, and starting bonding;
s54, the driving plate is connected with the chip by adopting 250 mu m aluminum wire bonding, and the shell is connected with the emitter of the chip by adopting 380 mu m aluminum wire bonding;
s55, bonding inspection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310115833.1A CN116153922A (en) | 2023-02-15 | 2023-02-15 | High-power intelligent IGBT module and processing technology thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310115833.1A CN116153922A (en) | 2023-02-15 | 2023-02-15 | High-power intelligent IGBT module and processing technology thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116153922A true CN116153922A (en) | 2023-05-23 |
Family
ID=86353917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310115833.1A Pending CN116153922A (en) | 2023-02-15 | 2023-02-15 | High-power intelligent IGBT module and processing technology thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116153922A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1219767A (en) * | 1997-12-08 | 1999-06-16 | 东芝株式会社 | Package for semiconductor power device and method for assembling the same |
| JP2005311019A (en) * | 2004-04-21 | 2005-11-04 | Hitachi Ltd | Semiconductor power module |
| US20080296782A1 (en) * | 2007-06-04 | 2008-12-04 | Infineon Technologies Ag | Semiconductor device |
| CN101582414A (en) * | 2009-04-02 | 2009-11-18 | 嘉兴斯达微电子有限公司 | Power module by directly bonding power terminal |
| CN213845226U (en) * | 2020-10-26 | 2021-07-30 | 深圳市英威腾电气股份有限公司 | IGBT module heat conduction silicone grease coating equipment |
-
2023
- 2023-02-15 CN CN202310115833.1A patent/CN116153922A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1219767A (en) * | 1997-12-08 | 1999-06-16 | 东芝株式会社 | Package for semiconductor power device and method for assembling the same |
| JP2005311019A (en) * | 2004-04-21 | 2005-11-04 | Hitachi Ltd | Semiconductor power module |
| US20080296782A1 (en) * | 2007-06-04 | 2008-12-04 | Infineon Technologies Ag | Semiconductor device |
| CN101582414A (en) * | 2009-04-02 | 2009-11-18 | 嘉兴斯达微电子有限公司 | Power module by directly bonding power terminal |
| CN213845226U (en) * | 2020-10-26 | 2021-07-30 | 深圳市英威腾电气股份有限公司 | IGBT module heat conduction silicone grease coating equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8193024B2 (en) | Manufacturing method for semiconductor devices and semiconductor device | |
| US6777814B2 (en) | Semiconductor device | |
| CN103515364A (en) | Power module package and method for manufacturing the same | |
| EP2533275A1 (en) | Method for manufacturing semiconductor device and semiconductor device | |
| CN101924046A (en) | Method for forming wire bonding in semiconductor device | |
| JP5188327B2 (en) | Transfer mold type electronic control device, method for manufacturing the same, and transmission | |
| JP2008294275A (en) | Power semiconductor device | |
| JP2012028484A (en) | Module and manufacturing method of the same | |
| CN103779295A (en) | Power module package | |
| KR20080035210A (en) | Semiconductor package suppressing a warpage and wire open defects and manufacturing method thereof | |
| US5844305A (en) | Lead frame for semiconductor devices | |
| CN103887256A (en) | High-cooling-performance chip-embedded type electromagnetic shielding encapsulating structure and manufacturing method thereof | |
| CN1299518A (en) | Semiconductor pakage and flip-chiop bonding method therefor | |
| US20230118890A1 (en) | Semiconductor device, and manufacturing method therefor | |
| CN101026133A (en) | Semiconductor package structure with radiating fin and its manufacturing method | |
| CN116153922A (en) | High-power intelligent IGBT module and processing technology thereof | |
| CN1577824A (en) | Method for making a direct chip attach device and structure | |
| CN102354688A (en) | Power module | |
| CN113113364A (en) | Power module and packaging method thereof | |
| JP2013165125A (en) | Semiconductor package and manufacturing method semiconductor package | |
| WO2012131919A1 (en) | Semiconductor device and method for manufacturing same | |
| CN203787410U (en) | High radiating chip embedded electromagnetic shielding packaging structure | |
| CN215220694U (en) | Power module | |
| JP3446695B2 (en) | Semiconductor device | |
| CN100466209C (en) | Packaging system for semiconductor devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |